Regulation and control method of hafnium-based thin film crystal structure

Abstract

The invention provides a regulation and control method of a hafnium-based thin film crystal structure. The regulation and control method comprises the following steps: providing a substrate; preparing a hafnium-based thin film on the substrate, and changing the strain of the hafnium-based thin film by controlling the preparation parameters of the hafnium-based thin film; and carrying out thermal annealing on the film structure, and regulating and controlling the crystal structure of the hafnium-based film by controlling the annealing temperature based on the temperature-strain phase diagram of the hafnium-based film. According to the method, different strains are introduced into the film by regulating and controlling parameters in the hafnium-based film preparation process, so that the purpose of effectively and finely regulating the crystal structure of the hafnium-based film is achieved by cooperatively controlling the temperature in the annealing process and the strain of the hafnium-based film, the material performance can be optimized, and the quality of the hafnium-based film is improved. Compared with traditional single temperature or thin film parameter control, the regulation and control method is more accurate and effective.

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