Image sensor, camera module, electronic device, and method of manufacturing package structure of image sensor

Abstract

The present disclosure provides an image sensor, comprising a sensor chip and a packaging structure, the packaging structure comprising: a first transparent substrate; a packaging component for packaging the sensor chip, the packaging component being arranged on a side of the first transparent substrate facing a light-sensitive region of the sensor chip, and a normal projection of the packaging component on the first transparent substrate does not overlap with a normal projection of the light-sensitive region of the sensor chip on the first transparent substrate; and a light adjustment component for adjusting light intensity incident to the light-sensitive region of the sensor chip, the light adjustment component being arranged on a side of the first transparent substrate, and a normal projection of the light adjustment component on the first transparent substrate covers a normal projection of the light-sensitive region of the sensor chip on the first transparent substrate.

Description

Technical Field

[0001] This disclosure relates to the field of camera component technology, and more particularly to an image sensor, camera module, electronic device, and a method for manufacturing an image sensor packaging structure. Background Technology

[0002] With the development of technology, cameras are being used in more and more scenarios in modern society. These include mobile phone cameras, autonomous driving cameras, industrial control cameras, and security cameras.

[0003] The camera compact module (CCM) is a crucial component for image capture and the most important part of a camera. The image sensor is the core component of the camera module; it converts light signals into electrical signals and then into digital signals through a readout circuit. The complementary metal-oxide-semiconductor image sensor (CMOS image sensor, CIS) is a commonly used image sensor in camera modules. Summary of the Invention

[0004] According to a first aspect of this disclosure, an image sensor is provided, including a sensor chip and a packaging structure. The packaging structure includes: a first transparent substrate; a packaging assembly for packaging the sensor chip, the packaging assembly being disposed on one side of the first transparent substrate facing the photosensitive area of ​​the sensor chip, and the orthographic projection of the packaging assembly on the first transparent substrate not overlapping the orthographic projection of the photosensitive area of ​​the sensor chip on the first transparent substrate; and a dimming assembly for adjusting the light intensity incident on the photosensitive area of ​​the sensor chip, the dimming assembly being disposed on one side of the first transparent substrate, and the orthographic projection of the dimming assembly on the first transparent substrate covering the orthographic projection of the photosensitive area of ​​the sensor chip on the first transparent substrate.

[0005] In some embodiments, the dimming component and the packaging component are disposed on the same side of the first transparent substrate, and the dimming component includes a first transparent conductive layer disposed on the surface of the first transparent substrate facing the photosensitive area of ​​the sensor chip.

[0006] In some embodiments, the packaging assembly includes: a carrier layer disposed on the side of the first transparent substrate facing the photosensitive area of ​​the sensor chip; a redistribution layer disposed on the surface of the carrier layer opposite to the first transparent substrate; a solder mask at least a portion of which is disposed on the surface of the carrier layer opposite to the first transparent substrate, wherein the orthographic projection of the solder mask on the first transparent substrate surrounds the orthographic projection of the photosensitive area on the first transparent substrate, and in a direction perpendicular to the first transparent substrate, the thickness of the portion of the solder mask disposed on the surface of the carrier layer opposite to the first transparent substrate is greater than the thickness of the redistribution layer; and a solder mask surface disposed on the side of the first transparent substrate facing the photosensitive area of ​​the sensor chip and at least covers a portion of the redistribution layer, wherein the solder mask surface includes a plurality of first vias.

[0007] In some embodiments, the dimming assembly further includes a second conductive layer insulated from the first conductive layer, the second conductive layer being disposed on the side of the first conductive layer facing away from the first transparent substrate, the carrier layer including a first carrier portion and a second carrier portion, the first carrier portion being disposed on the surface of the first transparent conductive layer facing away from the first transparent substrate, the second carrier portion being disposed on the surface of the second transparent conductive layer facing away from the first transparent substrate, the first carrier portion facing away from the first transparent substrate and the second carrier portion facing away from the first transparent substrate being flush, the second carrier portion including at least one second through hole, the redistribution layer being disposed on the surfaces of the first carrier portion and the second carrier portion facing away from the first transparent substrate, the orthographic projection of the at least one second through hole on the first transparent substrate being located inside the orthographic projection of the redistribution layer on the first transparent substrate.

[0008] In some embodiments, the packaging assembly further includes an electrical connection disposed in the second via and electrically connecting the second transparent conductive layer and the redistribution layer.

[0009] In some embodiments, the material of the electrical connection portion is the same as the material of the redistribution layer.

[0010] In some embodiments, the solder mask surface includes a first mask portion and a second mask portion. The first mask portion is disposed on the surface of the first transparent conductive layer opposite to the first transparent substrate, and the second mask portion is disposed on the surface of the carrier layer or the redistribution layer opposite to the first transparent substrate. The surfaces of the first mask portion and the second mask portion opposite to the first transparent substrate are flush. The first mask portion includes at least one third through-hole, and the orthographic projection of the at least one third through-hole on the first transparent substrate is located inside the orthographic projection of the first transparent conductive layer on the first transparent substrate.

[0011] In some embodiments, the dimming component is disposed on the side of the first transparent substrate opposite to the encapsulation component.

[0012] In some embodiments, the dimming assembly includes a first transparent conductive layer disposed on the surface of the first transparent substrate opposite to the photosensitive area of ​​the sensor chip.

[0013] In some embodiments, the dimming assembly further includes a second transparent substrate, which is bonded to the first transparent substrate by an optically transparent adhesive, and the first transparent conductive layer is disposed on the surface of the second transparent substrate facing away from the first transparent substrate.

[0014] In some embodiments, the dimming assembly further includes: an electrochromic layer disposed on the surface of the first transparent conductive layer opposite to the first transparent substrate; an ion-conducting layer disposed on the surface of the electrochromic layer opposite to the first transparent substrate; an ion storage layer disposed on the surface of the ion-conducting layer opposite to the first transparent substrate; and a second transparent conductive layer disposed on the surface of the ion storage layer opposite to the first transparent substrate, wherein the orthographic projections of the electrochromic layer, the ion-conducting layer, the ion storage layer, and the second transparent conductive layer on the first transparent substrate are located inside the orthographic projection of the first transparent conductive layer on the first transparent substrate.

[0015] In some embodiments, the dimming assembly includes a liquid crystal layer sandwiched between a third transparent substrate and a fourth transparent substrate.

[0016] In some embodiments, the dimming assembly further includes: a third transparent conductive layer disposed on the surface of the third transparent substrate facing the liquid crystal layer; a first alignment layer disposed on the surface of the third transparent conductive layer facing the liquid crystal layer; a first polarizer disposed on the surface of the third transparent substrate away from the liquid crystal layer; a fourth transparent conductive layer disposed on the surface of the fourth transparent substrate facing the liquid crystal layer; a second alignment layer disposed on the surface of the fourth transparent conductive layer facing the liquid crystal layer; a second polarizer disposed on the surface of the fourth transparent substrate away from the liquid crystal layer; and the surface of the first polarizer away from the third transparent substrate and the surface of the first transparent substrate away from the encapsulation assembly are bonded and fixed together by optically transparent adhesive.

[0017] In some embodiments, the third transparent substrate and the fourth transparent substrate are thin glass substrates.

[0018] In some embodiments, the third transparent substrate and the fourth transparent substrate are flexible substrates.

[0019] In some embodiments, the dimming component further includes: a first nanograting array disposed on the surface of the third transparent substrate facing the liquid crystal layer, the first nanograting array including a plurality of nanowires extending along a first direction; and a second nanograting array disposed on the surface of the fourth transparent substrate facing the liquid crystal layer, the second nanograting array including a plurality of nanowires extending along a second direction, wherein the first direction is perpendicular to the second direction.

[0020] In some embodiments, the dimming component further includes: a fifth transparent conductive layer disposed on the surface of the third transparent substrate facing the liquid crystal layer and filling the gaps between the multiple nanowires of the first nanograting array; a third alignment layer disposed on the surface of the fifth transparent conductive layer facing the liquid crystal layer; a sixth transparent conductive layer disposed on the surface of the fourth transparent substrate facing the liquid crystal layer and filling the gaps between the multiple nanowires of the second nanograting array; and a fourth alignment layer disposed on the surface of the sixth transparent conductive layer facing the liquid crystal layer.

[0021] In some embodiments, the third transparent substrate and the first transparent substrate are bonded and fixed together by optically transparent adhesive.

[0022] In some embodiments, the third transparent substrate and the first transparent substrate are the same transparent substrate.

[0023] In some embodiments, the liquid crystal layer is a twisted nematic liquid crystal.

[0024] In some embodiments, the image sensor is a CMOS image sensor.

[0025] According to a second aspect of this disclosure, a camera module is provided, including the aforementioned image sensor and a lens module located on the light-incident side of the image sensor.

[0026] According to a third aspect of this disclosure, an electronic device is provided, including the aforementioned camera module.

[0027] According to a fourth aspect of this disclosure, a method for fabricating the packaging structure of the image sensor described above is provided. The method includes: providing a first transparent substrate; fabricating a dimming component on one side of the first transparent substrate, the orthographic projection of the dimming component onto the first transparent substrate covering the orthographic projection of a photosensitive area of ​​the sensor chip of the image sensor onto the first transparent substrate; and fabricating a packaging component on one side of the first transparent substrate, the orthographic projection of the packaging component onto the first transparent substrate not overlapping the orthographic projection of the photosensitive area of ​​the sensor chip of the image sensor onto the first transparent substrate. Attached Figure Description

[0028] To more clearly describe the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 An exploded view of a camera module in the related technology is shown;

[0030] Figure 2 The aperture diagrams under different conditions are shown;

[0031] Figure 3 A simplified diagram of the imaging optical path of the camera module is shown;

[0032] Figure 4 A cross-sectional view of the basic structure of a conventional image sensor is shown;

[0033] Figure 5 A top view of the packaging structure of a conventional image sensor is shown;

[0034] Figure 6 It shows along Figure 5 A cross-sectional view of the packaging structure of a conventional image sensor, taken from line AA in the middle;

[0035] Figure 7 A top view of the packaging structure of an image sensor according to an embodiment of the present disclosure is shown;

[0036] Figure 8A cross-sectional view of an image sensor according to an embodiment of the present disclosure is shown, wherein the cross-sectional view of the packaging structure is along... Figure 7 The image was taken from the middle BB line;

[0037] Figure 9 A cross-sectional view of the packaging structure of an image sensor according to an embodiment of the present disclosure is shown;

[0038] Figure 10 A cross-sectional view of the packaging structure of an image sensor according to an embodiment of the present disclosure is shown;

[0039] Figure 11 It shows Figure 8 The transmittance spectrum of the encapsulation structure shown in the visible light range;

[0040] Figure 12 It shows Figure 8 The transmittance spectrum of the encapsulation structure shown in the visible light range;

[0041] Figure 13 A cross-sectional view of the packaging structure of an image sensor according to an embodiment of the present disclosure is shown;

[0042] Figure 14 A cross-sectional view of the packaging structure of an image sensor according to an embodiment of the present disclosure is shown;

[0043] Figure 15 A cross-sectional view of the packaging structure of an image sensor according to an embodiment of the present disclosure is shown.

[0044] The shapes and thicknesses of the films in the accompanying drawings do not reflect the actual proportions of the films; they are intended only to illustrate the contents of this disclosure. Detailed Implementation

[0045] With the widespread use of cameras, their applications are expanding, including mobile phone photography, drone video recording, and security monitoring. While people appreciate the speed and convenience of cameras in these various applications, they are also troubled by some inconveniences. For example, images are difficult to capture in overly bright light, backlighting results in dark faces, and front lighting leads to overexposure and excessive brightness. Although adjusting the aperture and focal length can solve some problems, it also introduces new drawbacks, such as high cost, long focusing time, and unsuitability for high-speed imaging.

[0046] The camera module is a crucial component for image capture and is the most important part of a camera. Figure 1 An exploded view of a camera module in related technologies is shown. For example... Figure 1As shown, the camera module mainly includes: Cover 40, Lens Module 20, Voice Coil Motor (VCM) 30, Bracket 50, Infrared Filter 60, Image Sensor 10, and Printed Circuit Board (PCB) 70.

[0047] The most important components of the lens module 20 are the lens group and the filter device (aperture). The aperture is a device used to control the amount of light passing through the lens and entering the photosensitive surface of the image sensor. The aperture is usually located within the lens module. The amount of light entering is directly proportional to the square of the effective aperture diameter D of the lens and inversely proportional to the focal length f. The ratio of D to f is called the relative aperture. The reciprocal of the relative aperture is called the f-number, also known as the F-number, F = f / D. The smaller the f-number, the larger the aperture, and the more light enters in the same unit of time. Figure 2 The aperture diagrams under different conditions are shown.

[0048] The function of the voice coil motor 30 is to control the movement of the spring / shutter via the controlled current, adjusting the position of each lens in the lens module along the XYZ axes to ensure the focused object is in the sharpest possible state. In short, the voice coil motor adjusts the focal length.

[0049] Image sensor 10 is the core component of the camera module. It converts light signals into electrical signals and then into digital signals through a readout circuit. Complementary metal-oxide-semiconductor image sensor (CMOS image sensor, abbreviated as CIS) is a commonly used image sensor in camera modules. Figure 3 A simplified diagram of the imaging optical path of the camera module is shown. (For example...) Figure 3 As shown, the imaging optical path is roughly as follows: Light enters through the lens module, the amount of light is adjusted by the aperture, the focal length is adjusted by the lens group, and after passing through the image sensor's packaging substrate, it is incident on the sensor chip, which is located at the focal plane of the optical path. The correlation can be expressed by the following formula:

[0050]

[0051] Where ΔL represents depth of field, f represents focal length (image distance), F represents aperture value, L represents shooting distance, and δ represents circle of confusion diameter. In camera modules, the circle of confusion diameter is generally a fixed value, so to achieve a clear image, the aperture and focal length need to be adjusted to appropriate values.

[0052] The above describes a camera module that includes an aperture and adjustable focus. Additionally, some low-cost camera modules use fixed focus or no aperture, making them completely incapable of capturing images in scenes with changing lighting conditions.

[0053] In related technologies, a separate dimming component is typically placed in the camera module (e.g., arranged on the light-incident side of the lens group, the light-outcident side of the lens group, or between adjacent lenses in the lens group) to achieve clear imaging. This structure significantly increases the overall thickness of the camera module, hindering the achievement of a thinner and lighter device. This disclosure proposes an image sensor packaging structure that integrates the dimming component into the image sensor's packaging structure, greatly reducing the thickness of the camera module. Without increasing costs, the image sensor of this disclosure can effectively adjust the incident light brightness, enabling rapid imaging in a high-brightness range. Since the aperture size does not need to be changed, the focus does not need to be readjusted, significantly shortening the imaging time.

[0054] Figure 4 A cross-sectional view of the basic structure of a conventional image sensor is shown. The image sensor 10 typically includes a sensor chip 11, an optical film layer 13 located on the light-incident side of the sensor chip 11, and a packaging structure 12. The optical film layer 13 typically includes a color filter and a microlens structure. The light incident direction is as follows: Figure 4 As indicated by the middle arrow. Figure 5 A top view of the package structure of a conventional image sensor is shown. Figure 6 It shows along Figure 5 A cross-sectional view of the packaging structure of a conventional image sensor, taken along line AA. (See diagram below.) Figure 5 and Figure 6 As shown, the package structure 12 of a conventional image sensor includes: a first transparent substrate 100, a cavity layer 111, a redistribution layer 112, a barrier solder mask 113, and a solder mask face 114. The cavity layer 111 houses the optical film layer, and the redistribution layer 112 is typically a conductive layer made primarily of Cu. The barrier solder mask 113 forms a barrier around the photosensitive area 01, preventing the adhesive used during the packaging process from entering the photosensitive area 01. The pads of the sensor chip are typically distributed in a dotted pattern. After soldering the pads of the sensor chip to the package structure, some gaps remain between the sensor chip and the package structure. To enhance the bonding strength between the sensor chip and the package structure, and to prevent particulate contaminants from entering the photosensitive area, an adhesive can be used to fill the gaps between the sensor chip and the package structure. The adhesive can be, for example, an epoxy resin-based adhesive. The solder mask surface 114 is used to protect the redistribution layer and to reserve the location (i.e., the first via 131) where solder material (e.g., Sn ball) needs to be applied later.

[0055] for Figure 5 and Figure 6The conventional image sensor packaging structure shown can be fabricated using the following steps: 1. Fabricating a carrier layer: A carrier layer is prepared using processes such as spin coating and exposure development to form a cavity for subsequently accommodating the optical film layer of the image sensor. The carrier layer can be made of resin, and its thickness is generally 30 μm; 2. Fabricating a redistribution layer: A redistribution layer is prepared using processes such as electroplating, exposure development, and etching. The redistribution layer is mainly made of Cu, and its thickness is generally 3-4 μm; 3. Fabricating a solder mask: A solder mask is prepared using processes such as spin coating and exposure development to form a barrier around the photosensitive area of ​​the image sensor, preventing the colloid used during the packaging process from entering the photosensitive area. The solder mask can be made of resin, and its thickness is generally 10 μm; 4. Fabricating a solder mask surface: A solder mask surface is prepared using processes such as spin coating and exposure development to protect the redistribution layer and reserve the positions for subsequent soldering of materials. The solder mask surface can be made of resin, and its thickness is generally 15 μm. The aperture of the first via can be 100 μm.

[0056] According to a first aspect of this disclosure, an image sensor is provided. Figure 7 A top view of the packaging structure of an image sensor according to an embodiment of the present disclosure is shown. Figure 8 A cross-sectional view of an image sensor according to an embodiment of the present disclosure is shown, wherein the cross-sectional view of the packaging structure is along... Figure 7 It was taken from the middle BB line. Figures 9-13 Cross-sectional views of the packaging structure of an image sensor according to embodiments of the present disclosure are shown. (Refer to...) Figures 7-13 The image sensor 10 packaging structure 12 provided in this embodiment may include: a first transparent substrate 100; a packaging component 110 for packaging a sensor chip, the packaging component being disposed on the side of the first transparent substrate 100 facing the photosensitive area 01 of the sensor chip 11, and the orthographic projection of the packaging component 110 on the first transparent substrate 100 not overlapping the orthographic projection of the photosensitive area 01 of the sensor chip on the first transparent substrate 100; and a dimming component 120 for adjusting the light intensity incident on the photosensitive area 01 of the sensor chip, the dimming component 120 being disposed on one side of the first transparent substrate 100, and the orthographic projection of the dimming component 120 on the first transparent substrate 100 covering the orthographic projection of the photosensitive area 01 of the sensor chip 11 on the first transparent substrate 100.

[0057] refer to Figures 7-13The packaging assembly 110 may include: a carrier layer 111 disposed on the side of the first transparent substrate 100 facing the photosensitive area of ​​the sensor chip; a redistribution layer 112 disposed on the surface of the carrier layer 111 facing away from the first transparent substrate 100; a solder mask 113, at least a portion of which is disposed on the surface of the carrier layer 111 facing away from the first transparent substrate 100, wherein the orthographic projection of the solder mask 113 on the first transparent substrate 100 surrounds the orthographic projection of the photosensitive area O1 on the first transparent substrate 100, and in a direction perpendicular to the first transparent substrate 100, the thickness of the portion of the solder mask 113 disposed on the surface of the carrier layer 111 facing away from the first transparent substrate 100 is greater than the thickness of the redistribution layer 112; and a solder mask surface 114 disposed on the side of the first transparent substrate 100 facing the photosensitive area of ​​the sensor chip and at least covering a portion of the redistribution layer 112, wherein the solder mask surface 114 includes a plurality of first vias 131. Multiple first vias on the solder mask surface expose a redistribution layer, and Sn ball solder can subsequently be applied at the multiple first vias to fan out the sensor chip circuitry onto the PCB.

[0058] In some embodiments, such as Figures 7-13 As shown, the solder mask 113 can be partially disposed on the surface of the carrier layer 111 facing away from the first transparent substrate 100, and another portion disposed on the surface of the redistribution layer 112 facing away from the first transparent substrate 100. In other embodiments, the solder mask can be entirely disposed on the surface of the carrier layer facing away from the first transparent substrate, as long as the thickness of the solder mask is greater than the thickness of the redistribution layer. Because the thickness of the solder mask is greater than the thickness of the redistribution layer, the solder mask can effectively prevent the adhesive used in subsequent packaging processes from entering the photosensitive area.

[0059] In some embodiments, the dimming component may be an electrochromic functional layer. For example... Figures 8-10As shown, the dimming assembly 120 may include: a first transparent conductive layer 121 disposed on one side of the first transparent substrate 100; an electrochromic layer 122 disposed on the surface of the first transparent conductive layer 121 facing away from the first transparent substrate 100; an ion conductive layer 123 disposed on the surface of the electrochromic layer 122 facing away from the first transparent substrate 100; an ion storage layer 124 disposed on the surface of the ion conductive layer 123 facing away from the first transparent substrate 100; and a second transparent conductive layer 125 disposed on the surface of the ion storage layer 124 facing away from the first transparent substrate 100. The orthographic projections of the electrochromic layer 122, the ion-conducting layer 123, the ion storage layer 124, and the second transparent conductive layer 125 onto the first transparent substrate 100 are located inside the orthographic projection of the first transparent conductive layer 121 onto the first transparent substrate 100.

[0060] This disclosure utilizes an electrochromic color-changing light transmittance component to adjust the light transmittance without adjusting the aperture F-number, thus achieving clear imaging without adjusting the focal length via a voice coil motor. For high-end cameras with aperture-magnification zoom, in applications where incident light intensity changes rapidly, such as drones flying against the light, the camera aperture and focal length do not need to be changed; the transmittance is quickly adjusted through the electrochromic functional layer to achieve fast and clear imaging. For low-cost apertureless cameras, which cannot image properly in environments that are too bright or too dark, this disclosure adjusts the light transmittance through the electrochromic functional layer, enabling apertureless cameras to better balance imaging in both the brightest and darkest areas, achieving a wider dynamic range.

[0061] In some embodiments, such as Figure 8 As shown, the dimming component (electrochromic functional layer) 120 and the encapsulation component 110 are arranged on the same side of the first transparent substrate 100. Specifically, the first transparent conductive layer 121 is disposed on the surface of the first transparent substrate 100 facing the photosensitive area of ​​the sensor chip; the electrochromic layer 122 is disposed on the surface of the first transparent conductive layer 121 facing away from the first transparent substrate 100; the ion conductive layer 123 is disposed on the surface of the electrochromic layer 122 facing away from the first transparent substrate 100; the ion storage layer 124 is disposed on the surface of the ion conductive layer 123 facing away from the first transparent substrate 100; and the second transparent conductive layer 125 is disposed on the surface of the ion storage layer 124 facing away from the first transparent substrate 100.

[0062] The electrochromic functional layer is directly integrated with the packaging components on the same transparent substrate, eliminating the need for an additional carrier substrate and reducing the overall thickness of the image sensor by at least 200 μm.

[0063] In some embodiments, such as Figure 8 As shown, the carrier layer 111 includes a first carrier portion 111a and a second carrier portion 111b. The first carrier portion 111a is disposed on the surface of the first transparent conductive layer 121 facing away from the first transparent substrate 100, and the second carrier portion 111b is disposed on the surface of the second transparent conductive layer 125 facing away from the first transparent substrate 100. The surfaces of the first carrier portion 111a and the second carrier portion 111b facing away from the first transparent substrate 100 are flush. The second carrier portion 111b includes at least one second through hole 132. The redistribution layer 112 is disposed on the surfaces of the first carrier portion 111a and the second carrier portion 111b facing away from the first transparent substrate 100. The orthographic projection of the at least one second through hole 132 on the first transparent substrate 100 is located inside the orthographic projection of the redistribution layer 112 on the first transparent substrate 100.

[0064] In some embodiments, such as Figure 8 As shown, the encapsulation assembly 110 further includes an electrical connection portion 115, which is disposed in the second via 132 and electrically connects the second transparent conductive layer 125 and the redistribution layer 112. The second transparent conductive layer of the electrochromic functional layer and the redistribution layer of the encapsulation assembly are connected together through the electrical connection portion. Therefore, the leads for applying electrical signals to the electrochromic functional layer can share a single film layer with the redistribution layer, thereby simplifying circuit wiring. The entire encapsulation structure has a simple process, high yield, and low cost.

[0065] In some embodiments, the material of the electrical connection portion can be the same as the material of the redistribution layer. The electrical connection portion and the redistribution layer can be formed together using the same process, simplifying the fabrication process.

[0066] In some embodiments, such as Figure 8As shown, the solder mask surface 114 includes a first mask portion 114a and a second mask portion 114b. The first mask portion 114a is disposed on the surface of the first transparent conductive layer 121 facing away from the first transparent substrate 100. The second mask portion 114b is disposed on the surface of the carrier layer 111 or the redistribution layer 112 facing away from the first transparent substrate 100. The surface of the first mask portion 114a facing away from the first transparent substrate 100 and the second mask portion 114b are flush with the surface of the first transparent substrate 100. The first mask portion 114a includes at least one third through-hole 133. The orthographic projection of the at least one third through-hole 133 on the first transparent substrate 100 is located inside the orthographic projection of the first transparent conductive layer 121 on the first transparent substrate 100. The third through-hole 133 exposes a portion of the first transparent conductive layer 121, and conductive material can be disposed in the third through-hole to apply an electrical signal to the first transparent conductive layer.

[0067] for Figure 8The packaging structure shown can be fabricated using the following steps: 1. Fabricating a first transparent conductive layer: A transparent conductive layer is fabricated on one surface of the first transparent substrate using processes such as magnetron sputtering and slot coating. The material of the transparent conductive layer can be inorganic materials such as ITO, IZO, and FTO, and the thickness can be 40-100 nm, for example, 52 nm. 2. Fabricating an electrochromic layer: An inorganic electrochromic layer can be fabricated on the first transparent conductive layer using processes such as magnetron sputtering, electrochemical deposition, and vapor deposition. The material of the inorganic electrochromic layer can be NiO, V2O5, WO3, MoO3, etc., and the thickness of the inorganic electrochromic layer can be 100-1200 nm, for example, 200-800 nm; alternatively, an organic electrochromic layer can be fabricated on the first transparent conductive layer using processes such as slot coating, microgravure coating, or spin coating. The organic electrochromic layer material can be PEDOT (poly-3,4-ethylenedioxythiophene), polyaniline, and its various modified derivatives, etc., and the thickness of the organic film layer is generally 2 nm. 00-400nm, e.g., 300nm; 3. Fabrication of an ion-conducting layer: An ion-conducting layer is fabricated on the electrochromic layer using magnetron sputtering. The material of the ion-conducting layer can be LiTaO3, LiPON, Ta2O5, LiNbO3, etc., and the thickness of the ion-conducting layer is generally 50-800nm; 4. Fabrication of an ion storage layer: An ion storage layer is fabricated on the ion-conducting layer using magnetron sputtering. The material of the ion storage layer can be TiO2, V2O5, NiO, etc., and the thickness of the ion storage layer is generally 100-800nm, e.g., 150-500nm; 5. Fabrication of a second transparent conductive layer: Using... 6. Fabrication of the carrier layer: A second transparent conductive layer is fabricated on the ion storage layer using processes such as magnetron sputtering and slit coating. The material of the second transparent conductive layer can be inorganic materials such as ITO, IZO, and FTO, and the thickness can be 40-100 nm, for example, 52 nm. 7. Fabrication of the support layer: A support layer is fabricated using processes such as spin coating and exposure development to form a cavity for subsequently housing the optical film layer of the image sensor. The material of the support layer can be resin, and the thickness is generally 30 μm. 8. Fabrication of the redistribution layer: A redistribution layer is fabricated using processes such as electroplating, exposure development, and etching. This layer is used to bring out the pads of the image sensor chip and the circuitry of the electrochromic functional layer, and redistribute them. The material of the line layer is mainly Cu, and the thickness is generally 3-4μm; 8. Fabrication of solder mask: Solder mask is prepared using spin coating, exposure and development and other processes to form a barrier around the photosensitive area of ​​the image sensor, preventing the colloid used in the packaging process from entering the photosensitive area. The material of the solder mask can be resin, and the thickness is generally 10μm; 4. Fabrication of solder mask surface: Solder mask surface is prepared using spin coating, exposure and development and other processes to protect the redistribution layer and reserve the position of the solder material that will be soldered later. The material of the solder mask surface can be resin, and the thickness is generally 15μm. The aperture of the first via can be 100μm.

[0068] In some embodiments, such as Figure 9 and Figure 10 As shown, the dimming component (electrochromic functional layer) 120 is arranged on the side of the first transparent substrate 100 away from the encapsulation component 110.

[0069] In some embodiments, such as Figure 9 As shown, a first transparent conductive layer 121 is disposed on the surface of the first transparent substrate 100 away from the photosensitive area of ​​the sensor chip, an electrochromic layer 122 is disposed on the surface of the first transparent conductive layer 121 away from the first transparent substrate 100, an ion conductive layer 123 is disposed on the surface of the electrochromic layer 122 away from the first transparent substrate 100, an ion storage layer 124 is disposed on the surface of the ion conductive layer 123 away from the first transparent substrate 100, and a second transparent conductive layer 125 is disposed on the surface of the ion storage layer 124 away from the first transparent substrate 100.

[0070] for Figure 9 The encapsulation structure shown allows for the fabrication of a dimming component (electrochromic functional layer) on a first transparent substrate, followed by the flipping of the first transparent substrate to fabricate the encapsulation component. The specific fabrication processes for the electrochromic functional layer and the encapsulation component are not detailed here. The electrochromic functional layer is directly integrated with the encapsulation component on the same transparent substrate, eliminating the need for an additional carrier substrate and effectively reducing the thickness of the encapsulation structure. Furthermore, since the first and second transparent conductive layers of the electrochromic functional layer are not covered by the film layers of the encapsulation component, vias are not required to expose the first and second transparent conductive layers. The electrochromic functional layer can be directly controlled, reducing the fabrication steps.

[0071] In some embodiments, such as Figure 10 As shown, the dimming assembly (electrochromic functional layer) 120 may further include a second transparent substrate 200, which is bonded and fixed to the first transparent substrate 100 by optically transparent adhesive 02. Figure 10 As shown, a first transparent conductive layer 121 is disposed on the surface of the second transparent substrate 200 opposite to the first transparent substrate 100, an electrochromic layer 122 is disposed on the surface of the first transparent conductive layer 121 opposite to the second transparent substrate 200, an ion conductive layer 123 is disposed on the surface of the electrochromic layer 122 opposite to the second transparent substrate 200, an ion storage layer 124 is disposed on the surface of the ion conductive layer 123 opposite to the second transparent substrate 200, and a second transparent conductive layer 125 is disposed on the surface of the ion storage layer 124 opposite to the second transparent substrate 200.

[0072] for Figure 10The encapsulation structure shown allows for the fabrication of an encapsulation component and a dimming component (electrochromic functional layer) on a first transparent substrate and a second transparent substrate, respectively. The first and second transparent substrates are then bonded together. The bonding process can be achieved using the following method: an optically transparent adhesive layer is fabricated on the back side of either transparent substrate using techniques such as slot coating, spin coating, spraying, or micro-grooving. The other transparent substrate is then bonded to the optically transparent adhesive, followed by annealing or UV curing. Since the encapsulation component and dimming component are fabricated separately, their fabrication processes do not interfere with each other. Furthermore, because the first and second transparent conductive layers of the electrochromic functional layer are not covered by the encapsulation component's film layer, vias are not required to expose these layers. The electrochromic functional layer can be directly controlled, reducing the fabrication steps.

[0073] Figure 11 and Figure 12 for Figure 8 The transmittance spectrum of the shown packaging structure in the visible light range. This is achieved with a driving voltage ranging from -0.6V to 1V. Figure 11 The transmittance of the medium sample can be adjusted within the range of 20-66%. Figure 12 The transmittance of the medium sample can be adjusted within the range of 14-52%.

[0074] In some embodiments, such as Figures 13-15 As shown, the dimming assembly 120 may include a liquid crystal layer 500, which is sandwiched between a third transparent substrate 300 and a fourth transparent substrate 400.

[0075] In some embodiments, such as Figure 13 As shown, the dimming assembly 120 further includes: a third transparent conductive layer 301 disposed on the surface of the third transparent substrate 300 facing the liquid crystal layer 500; a first alignment layer 302 disposed on the surface of the third transparent conductive layer 301 facing the liquid crystal layer 500; a first polarizer 303 disposed on the surface of the third transparent substrate 300 away from the liquid crystal layer 500; a fourth transparent conductive layer 401 disposed on the surface of the fourth transparent substrate 400 facing the liquid crystal layer 500; a second alignment layer 402 disposed on the surface of the fourth transparent conductive layer 401 facing the liquid crystal layer 500; a second polarizer 403 disposed on the surface of the fourth transparent substrate 400 away from the liquid crystal layer 500; and the surface of the first polarizer 303 away from the third transparent substrate 300 is bonded and fixed to the surface of the first transparent substrate 100 away from the encapsulation assembly 110 by optically transparent adhesive 02.

[0076] for Figure 13The encapsulation structure shown can be fabricated using the following steps: 1. Fabricate a third transparent conductive layer and a fourth transparent conductive layer on one surface of the third transparent substrate and a fourth transparent substrate, respectively. The material of the transparent conductive layer can be ITO, and the thickness can be 10-100 nm, for example, 52 nm; 2. Fabricate a first alignment layer and a second alignment layer on the surfaces of the third transparent conductive layer and the fourth transparent conductive layer, and align them respectively. The thickness of the first alignment layer and the second alignment layer can be 10-200 nm, for example, 80 nm; 3. Fabricate a liquid crystal cell. The thickness of the liquid crystal cell is generally 3 μm, and the thickness range depends on the liquid crystal... The characteristics can be adjusted, ranging from 1 to 25 μm; 4. Attach the first polarizer and the second polarizer to the surfaces of the third and fourth transparent substrates opposite to the liquid crystal layer, respectively. The thickness of the polarizers ranges from 50 to 200 μm, for example, 70 to 80 μm; 5. Fabricate the encapsulation component. The specific fabrication steps will not be described in detail here; 6. Bond the dimming component and the encapsulation component together. Use slit coating, spin coating, spraying, or micro-gravure coating processes to create a layer of optically transparent adhesive on the back of the first or third transparent substrate. Then, bond another transparent substrate to the optically transparent adhesive and cure it by annealing or UV irradiation.

[0077] By using the liquid crystal layer as the dimming layer, the transmittance can be adjusted in real time, and the range of transmittance adjustment is larger.

[0078] In some embodiments, the third transparent substrate and the fourth transparent substrate are thin glass substrates, and the thickness of the thin glass can be in the range of 0.1mm-1.1mm. Preferably, thin glass with a thickness of 0.25mm can be selected.

[0079] In some embodiments, the third and fourth transparent substrates are flexible substrates, and the materials of the flexible substrates can be, for example, PET, CPI, PA, etc. The thickness of the flexible substrate can be smaller than that of the glass substrate, thereby further reducing the overall thickness of the device.

[0080] In some embodiments, the first polarizer and the second polarizer can be rigid polarizers, which can eliminate the need for the third transparent substrate and the fourth transparent substrate, thereby further reducing the overall thickness of the device.

[0081] In some embodiments, such as Figure 14As shown, the dimming component further includes: a first nanograting array 304, which is disposed on the surface of the third transparent substrate 300 facing the liquid crystal layer 500, the first nanograting array including multiple nanowires extending along a first direction; and a second nanograting array 404, which is disposed on the surface of the fourth transparent substrate 400 facing the liquid crystal layer 500, the second nanograting array 404 including multiple nanowires extending along a second direction, wherein the first direction is perpendicular to the second direction. In this embodiment, the first nanograting array and the second nanograting array play a polarization role, the principle of which is as follows: TE waves parallel to the direction of the metal grating drive electrons in the metal wire to oscillate along the length of the metal wire, and the electrons collide with atoms in the metal lattice, causing the TE waves to attenuate, accompanied by radiation; TM waves perpendicular to the direction of the grating drive electrons in the metal wire with limited space for movement, reducing attenuation and radiation, so that the TM waves can pass through the metal wire with almost no change. Two wire-grid polarizers are orthogonally fabricated, and the liquid crystal layer in the middle uses a twisted nematic liquid crystal. The pitch is set to be 90° rotated between the two substrates. Light passes through the first nano-grating array for polarization screening, and after being rotated by the liquid crystal layer, it is emitted through the second nano-grating array. In this way, the light transmittance can be adjusted by changing the deflection angle of the liquid crystal layer.

[0082] In some embodiments, such as Figure 14 As shown, the dimming assembly may further include: a fifth transparent conductive layer 305 disposed on the surface of the third transparent substrate 300 facing the liquid crystal layer 500, and filling the gaps between the multiple nanowires of the first nanograting array 304; a third alignment layer 306 disposed on the surface of the fifth transparent conductive layer 305 facing the liquid crystal layer 500; a sixth transparent conductive layer 405 disposed on the surface of the fourth transparent substrate 400 facing the liquid crystal layer 500, and filling the gaps between the multiple nanowires of the second nanograting array 404; and a fourth alignment layer 406 disposed on the surface of the sixth transparent conductive layer 405 facing the liquid crystal layer 500.

[0083] exist Figure 14 In the embodiment shown, the third transparent substrate 300 and the first transparent substrate 100 are bonded and fixed together by optically transparent adhesive.

[0084] for Figure 14The encapsulation structure shown can be fabricated using the following steps: 1. Fabricate a first nanograting array and a second nanograting array on the third and fourth transparent substrates respectively: apply a nanoimprint layer of a polymeric silicone compound or similar material using spin coating, slot coating, or other processes, and then imprint nanogratings onto the material surface using a nanoimprint soft film; the grating dimensions are: linewidth of 10nm-1000nm, wire grid pitch of 20-2000nm, and wire grid height of 10-1000nm. Specific parameters can be adjusted according to the minimum and maximum wavelengths required for polarization and the required transmittance; 2. Fabricate and align transparent conductive layers and alignment layers on the third and fourth substrates respectively; 3. Fabricate the liquid crystal cell; 4. Fabricate the encapsulation component on the first transparent substrate, following the same steps as above, which will not be repeated here; 5. Bond the dimming component and the encapsulation component together.

[0085] In some embodiments, such as Figure 15 As shown, the third transparent substrate and the first transparent substrate are the same transparent substrate, that is, the dimming component and the packaging component share a substrate. This can reduce the thickness of one substrate and further reduce the overall thickness of the device.

[0086] for Figure 15 The encapsulation structure shown can be fabricated using the following steps: 1. Fabricate an encapsulation component on a first transparent substrate, with the specific steps as described above, and will not be repeated here; 2. Fabricate a nanoimprint layer on the surface of the first transparent substrate away from the encapsulation component to form a first nanograting array, and fabricate and align a fifth transparent conductive layer and a third alignment layer; 3. Fabricate a nanoimprint layer on a fourth transparent substrate to form a second nanograting array, and fabricate and align a sixth transparent conductive layer and a fourth alignment layer; 4. Form a liquid crystal cell.

[0087] In embodiments where a liquid crystal layer is used for dimming, the liquid crystal layer may be a twisted nematic liquid crystal.

[0088] In embodiments of this disclosure, the image sensor may be a CMOS image sensor.

[0089] According to a second aspect of this disclosure, a camera module is provided, including an image sensor provided in any of the foregoing embodiments, and a lens module located on the light-incident side of the image sensor.

[0090] According to a third aspect of this disclosure, an electronic device is provided, including the aforementioned camera module.

[0091] According to a fourth aspect of this disclosure, a method is provided for fabricating a packaging structure for an image sensor provided in any of the foregoing embodiments. The method includes: providing a first transparent substrate; fabricating a dimming component on one side of the first transparent substrate, the orthographic projection of the dimming component onto the first transparent substrate covering the orthographic projection of a photosensitive area of ​​a sensor chip of the image sensor onto the first transparent substrate; and fabricating a packaging component on one side of the first transparent substrate, the orthographic projection of the packaging component onto the first transparent substrate not overlapping the orthographic projection of the photosensitive area of ​​the sensor chip of the image sensor onto the first transparent substrate.

[0092] In some embodiments, fabricating a packaging assembly on one side of the first transparent substrate includes: fabricating a carrier layer on the side of the first transparent substrate facing the photosensitive area of ​​the sensor chip; fabricating a redistribution layer on the surface of the carrier layer facing away from the first transparent substrate; fabricating a solder mask, the solder mask being at least partially disposed on the surface of the carrier layer facing away from the first transparent substrate, the orthographic projection of the solder mask on the first transparent substrate surrounding the orthographic projection of the photosensitive area on the first transparent substrate, and in a direction perpendicular to the first transparent substrate, the thickness of the portion of the solder mask disposed on the surface of the carrier layer facing away from the first transparent substrate being greater than the thickness of the redistribution layer; and fabricating a solder mask surface on the side of the first transparent substrate facing the photosensitive area of ​​the sensor chip, the solder mask surface at least covering a portion of the redistribution layer, the solder mask surface including a plurality of first vias.

[0093] In some embodiments, fabricating a dimming component on one side of the first transparent substrate includes: fabricating a first transparent conductive layer on one side of the first transparent substrate; fabricating an electrochromic layer on the surface of the first transparent conductive layer facing away from the first transparent substrate; fabricating an ion-conducting layer on the surface of the electrochromic layer facing away from the first transparent substrate; fabricating an ion storage layer on the surface of the ion-conducting layer facing away from the first transparent substrate; and fabricating a second transparent conductive layer on the surface of the ion storage layer facing away from the first transparent substrate, wherein the orthographic projections of the electrochromic layer, the ion-conducting layer, the ion storage layer, and the second transparent conductive layer on the first transparent substrate are located inside the orthographic projection of the first transparent conductive layer on the first transparent substrate.

[0094] In some embodiments, fabricating a dimming component on one side of the first transparent substrate includes: fabricating a liquid crystal layer on one side of the first transparent substrate, the liquid crystal layer being sandwiched between a third transparent substrate and a fourth transparent substrate.

[0095] In the accompanying drawings, the thickness of certain areas and layers may be exaggerated for clarity. The same reference numerals in the figures denote the same or similar structures, and therefore their detailed descriptions are omitted. The described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a full understanding of embodiments of this disclosure. However, those skilled in the art will recognize that the technical solutions of this disclosure can be practiced without one or more of the specific details described, or other methods, components, materials, etc., can be employed. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring the main technical concept of this disclosure.

[0096] Spatial relative terms such as “row,” “column,” “above,” “below,” “left,” “right,” etc., may be used herein for ease of description to describe the relationship between one element or feature and another element(s) illustrated in the figures. It will be understood that these spatial relative terms are intended to cover different orientations of the device in use or operation other than those depicted in the figures. For example, if the device in the figure is flipped, then an element described as “below,” “under,” or “below other elements or features” will be oriented “above other elements or features,” and an element described as “to the left of other elements” will be oriented “to the right of other elements.” Thus, the exemplary term “below” can cover both orientations of “above” and “below”, and the exemplary term “to the left” can cover both orientations of “to the left” and “to the right”. Devices may be oriented in other ways (rotated 90 degrees or in other orientations) and the spatial relative descriptors used herein will be interpreted accordingly. Additionally, it will be understood that when a layer is referred to as “between two layers,” it may be the only layer between the two layers, or there may be one or more intermediate layers.

[0097] In the description of this specification, references to terms such as "one embodiment," "another embodiment," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment is included in at least one embodiment of this disclosure. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples, without contradiction. Additionally, it should be noted that although the terms first, second, third, etc., may be used herein to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another area, layer, or portion.

[0098] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. An image sensor, comprising a sensor chip and a packaging structure, the packaging structure comprising: First transparent substrate; A packaging assembly for packaging a sensor chip, the packaging assembly being disposed on the side of a first transparent substrate facing the photosensitive area of ​​the sensor chip, and the orthographic projection of the packaging assembly on the first transparent substrate not overlapping the orthographic projection of the photosensitive area of ​​the sensor chip on the first transparent substrate. as well as A dimming component is used to adjust the light intensity incident on the photosensitive area of ​​the sensor chip, and the orthographic projection of the dimming component on the first transparent substrate covers the orthographic projection of the photosensitive area of ​​the sensor chip on the first transparent substrate. The dimming component and the packaging component are arranged on the same side of the first transparent substrate. The dimming component includes a first transparent conductive layer and a second transparent conductive layer that are insulated from each other. The first transparent conductive layer is disposed on the surface of the first transparent substrate facing the photosensitive area of ​​the sensor chip, and the second transparent conductive layer is disposed on the side of the first transparent conductive layer away from the first transparent substrate. The encapsulation component includes: A carrier layer is disposed on the side of the first transparent substrate facing the photosensitive area of ​​the sensor chip; A redistribution layer is disposed on the surface of the carrier layer opposite to the first transparent substrate; A solder mask, at least a portion of which is disposed on the surface of the carrier layer opposite to the first transparent substrate, wherein the orthographic projection of the solder mask on the first transparent substrate surrounds the orthographic projection of the photosensitive area on the first transparent substrate. A solder mask surface is disposed on one side of the first transparent substrate facing the photosensitive area of ​​the sensor chip and at least covers a portion of the redistribution layer, the solder mask surface including a plurality of first vias; The carrier layer includes a first carrier portion and a second carrier portion. The first carrier portion is disposed on the surface of the first transparent conductive layer opposite to the first transparent substrate, and the second carrier portion is disposed on the surface of the second transparent conductive layer opposite to the first transparent substrate. The second carrier portion includes at least one second through hole. The redistribution layer is disposed on the surfaces of the first carrier portion and the second carrier portion opposite to the first transparent substrate. The orthographic projection of the at least one second through hole on the first transparent substrate is located inside the orthographic projection of the redistribution layer on the first transparent substrate. The solder mask surface includes a first mask portion and a second mask portion. The first mask portion is disposed on the surface of the first transparent conductive layer away from the first transparent substrate. The second mask portion is disposed on the surface of the carrier layer or the redistribution layer away from the first transparent substrate. The first mask portion includes at least one third through-hole. The orthogonal projection of the at least one third through-hole on the first transparent substrate is located inside the orthogonal projection of the first transparent conductive layer on the first transparent substrate.

2. The image sensor according to claim 1, wherein, In a direction perpendicular to the first transparent substrate, the thickness of the portion of the solder mask disposed on the surface of the carrier layer opposite to the first transparent substrate is greater than the thickness of the redistribution layer.

3. The image sensor according to claim 2, wherein, The first carrier portion is flush with the surface of the first transparent substrate and the second carrier portion is flush with the surface of the first transparent substrate.

4. The image sensor of claim 3, wherein the packaging assembly further comprises an electrical connection disposed in the second through-hole and electrically connecting the second transparent conductive layer and the redistribution layer.

5. The image sensor according to claim 4, wherein the material of the electrical connection is the same as the material of the rewiring layer.

6. The image sensor according to claim 2, wherein, The first mask portion is flush with the surface of the first transparent substrate and the second mask portion is flush with the surface of the first transparent substrate.

7. The image sensor according to any one of claims 1-6, wherein the dimming assembly further comprises: An electrochromic layer is disposed on the surface of the first transparent conductive layer opposite to the first transparent substrate; An ion-conducting layer is disposed on the surface of the electrochromic layer opposite to the first transparent substrate. An ion storage layer is disposed between the ion-conducting layer and the second transparent conductive layer; The orthographic projection of the electrochromic layer, the ion-conducting layer, the ion storage layer, and the second transparent conductive layer on the first transparent substrate is located inside the orthographic projection of the first transparent conductive layer on the first transparent substrate.

8. The image sensor according to claim 1, wherein the image sensor is a CMOS image sensor.

9. A camera module comprising an image sensor according to any one of claims 1-8, and a lens module located on the light-incident side of the image sensor.

10. An electronic device comprising the camera module of claim 9.

11. A method for fabricating a packaging structure for an image sensor according to any one of claims 1-8, wherein, The method includes: Provide a first transparent substrate; A dimming component is fabricated on one side of the first transparent substrate, the orthographic projection of the dimming component onto the first transparent substrate covering the orthographic projection of the photosensitive area of ​​the image sensor chip onto the first transparent substrate. An encapsulation assembly is fabricated on one side of the first transparent substrate, wherein the orthographic projection of the encapsulation assembly on the first transparent substrate does not overlap with the orthographic projection of the photosensitive area of ​​the image sensor chip on the first transparent substrate. The dimming component and the packaging component are arranged on the same side of the first transparent substrate. The dimming component includes a first transparent conductive layer and a second transparent conductive layer that are insulated from each other. The first transparent conductive layer is disposed on the surface of the first transparent substrate facing the photosensitive area of ​​the sensor chip, and the second transparent conductive layer is disposed on the side of the first transparent conductive layer away from the first transparent substrate. The encapsulation component includes: A carrier layer is disposed on the side of the first transparent substrate facing the photosensitive area of ​​the sensor chip; A redistribution layer is disposed on the surface of the carrier layer opposite to the first transparent substrate; A solder mask, at least a portion of which is disposed on the surface of the carrier layer opposite to the first transparent substrate, wherein the orthographic projection of the solder mask on the first transparent substrate surrounds the orthographic projection of the photosensitive area on the first transparent substrate. A solder mask surface is disposed on one side of the first transparent substrate facing the photosensitive area of ​​the sensor chip and at least covers a portion of the redistribution layer, the solder mask surface including a plurality of first vias; The carrier layer includes a first carrier portion and a second carrier portion. The first carrier portion is disposed on the surface of the first transparent conductive layer opposite to the first transparent substrate, and the second carrier portion is disposed on the surface of the second transparent conductive layer opposite to the first transparent substrate. The second carrier portion includes at least one second through hole. The redistribution layer is disposed on the surfaces of the first carrier portion and the second carrier portion opposite to the first transparent substrate. The orthographic projection of the at least one second through hole on the first transparent substrate is located inside the orthographic projection of the redistribution layer on the first transparent substrate. The solder mask surface includes a first mask portion and a second mask portion. The first mask portion is disposed on the surface of the first transparent conductive layer away from the first transparent substrate. The second mask portion is disposed on the surface of the carrier layer or the redistribution layer away from the first transparent substrate. The first mask portion includes at least one third through-hole. The orthogonal projection of the at least one third through-hole on the first transparent substrate is located inside the orthogonal projection of the first transparent conductive layer on the first transparent substrate.

Images