High-voltage GaN high-electron-mobility transistor with a stepped electric field-assisted withstand layer

Abstract

This invention belongs to the field of semiconductor technology and relates to high electron mobility transistors (HEMTs). Specifically, it provides a high-voltage GaN HEMT with a stepped electric field-assisted withstand layer to solve problems such as low breakdown voltage, high specific on-resistance, and current collapse effect in traditional GaN HEMT devices. This invention creatively proposes a stepped electric field-assisted withstand layer structure to improve the device's breakdown voltage, resulting in a more uniform electric field distribution between the gate and drain. This solves the problem of electric field concentration caused by polarization charge attraction to the gate, thereby significantly improving the device's breakdown voltage. Furthermore, it reduces the impact of current collapse on the device, improving its reliability. This invention provides a new design direction and approach for high-voltage GaN HEMT devices, which is beneficial for their commercial application.

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