An oxide-doped indium oxide-based target material, a method for preparing the same, and an application thereof

Abstract

This invention belongs to the field of target technology, specifically relating to an oxide-doped indium oxide-based target, its preparation method, and its application. The oxide-doped indium oxide-based target, by mass, comprises the following components: 94.5–99.3 parts In₂O₃, 0.2–1.5 parts tetravalent oxides including TiO₂, ZrO₂, and SiO₂, and 0.1–1 parts high-valent oxides; the high-valent oxides include one or more of CrO₃, SeO₃, WO₃, MoO₃, and Mn₂O₇. This oxide-doped indium oxide-based target has a low doping concentration and high density, and the transparent conductive oxide thin film (TCO thin film) prepared from it exhibits high carrier mobility and near-infrared transmittance.

Description

Technical Field

[0001] This invention belongs to the field of target technology, specifically relating to an oxide-doped indium oxide-based target, its preparation method, and its application. Background Technology

[0002] Highly doped metal oxides, commonly known as transparent conductive oxides (TCOs), are the most widely used and researched transparent electrodes to date. Traditional TCO materials are tin, zinc, cadmium, and indium-based oxides (tin oxide, zinc oxide, CdO, In2O3). Conventional TCOs are binary systems, essentially polycrystalline materials, doped with halides, or group XIII or XV elements, such as ITO, IZO, IGZO, AZO, and ATO.

[0003] Crystalline silicon (c-Si) can absorb near-infrared light up to 1200 nm. Therefore, when TCO thin films are used as carrier transport layers in heterojunction (HJT) cells, they are required to have high optical transmittance not only in the visible light region but also in the near-infrared region.

[0004] Currently, the light absorption loss of the TCO layer mainly comes from infrared parasitic absorption caused by free carriers. When the carrier concentration of the TCO layer is too high, the near-infrared parasitic absorption peak of free carriers shifts to shorter wavelengths, reducing the near-infrared transmittance of the thin film and thus decreasing the short-circuit current density Jsc of the HJT cell. Therefore, for TCO layers used in HJT cells, the carrier concentration should be limited to broaden the optical transmission window, thereby improving the spectral response and short-circuit current density of the HJT cell.

[0005] Transparent conductive oxide thin films prepared from ITO targets (primarily composed of indium oxide) have long been widely used in flat panel displays, solar cells, organic light-emitting diodes, low-emissivity glass, special functional window coatings, transparent thin-film transistors, and flexible electronic devices due to their excellent optoelectronic properties, such as wide bandgap, low resistivity, high transmittance in the visible light region, and high reflectance in the infrared spectral region.

[0006] TCO thin films prepared with indium oxide-based targets doped with different elements exhibit varying photoelectric properties. With the development of industries such as panel displays and photovoltaic cells, higher requirements are being placed on the optical and electrical performance of TCO thin films. TCO thin films prepared with pure In₂O₃ targets show carrier mobilities as high as 80–150 cm⁻¹. 2However, its sintering temperature is too high (In2O3 melting point 2000℃), so it is generally reduced by doping with oxides. Low-doped indium oxide targets still have a high indium content, so the sintering temperature needs to be as high as 1800-1900℃ to prepare high-density targets suitable for physical vapor deposition (PVD) sputtering coating. This results in high energy consumption and high requirements for sintering equipment.

[0007] Traditional ITO targets, with the addition of 10 wt% SnO2 as a sintering aid, can significantly reduce the sintering temperature of indium oxide targets to below 1600℃. However, excessively high doping concentrations can negatively impact the light transmittance and electrical properties of the thin film; a 90 / 10 wt% ITO target exhibits a carrier mobility of only 30–40 cm⁻¹. 2 The transmittance in the near-infrared region is less than 80%, while the transmittance in the near-infrared region is less than 80%. Therefore, there is an urgent need to develop a target material with low doping concentration and high density, and to develop a TCO film with high carrier mobility and near-infrared transmittance. Summary of the Invention

[0008] In view of this, the purpose of the present invention is to provide an oxide-doped indium oxide-based target, its preparation method and application, wherein the oxide-doped indium oxide-based target has a low doping concentration and high density, and the transparent conductive oxide thin film (TCO thin film) prepared therefrom has high carrier mobility and near-infrared transmittance.

[0009] To achieve the above objectives, the present invention provides the following technical solution:

[0010] This invention provides an oxide-doped indium oxide-based target material, comprising the following components by mass:

[0011] In₂O₃ 94.5–99.3 parts,

[0012] The tetravalent oxides include 0.2–1.5 parts TiO₂, 0.2–1.5 parts ZrO₂, and 0.2–1.5 parts SiO₂.

[0013] 0.1 to 1 part of high-valence oxides; the high-valence oxides include one or more of CrO3, SeO3, WO3, MoO3 and Mn2O7.

[0014] Preferably, the oxide-doped indium oxide-based target has a relative density ≥99%, an average grain size <9μm, and a bulk resistivity <0.6mΩ·cm.

[0015] The present invention also provides a method for preparing the oxide-doped indium oxide-based target described in the above technical solution, comprising the following steps:

[0016] In2O3, tetravalent oxide, high-valent oxide, water and dispersant are mixed according to the mass parts, and the resulting slurry is ball-milled. The ball-milled slurry is then mixed with plasticizer and binder and granulated to obtain mixed oxide powder.

[0017] The mixed oxide powder is shaped, and the resulting target blank is degreased and sintered sequentially to obtain the oxide-doped indium oxide-based target.

[0018] Preferably, the sintering temperature is 1200–1450°C, and the sintering time is 20–40 h.

[0019] Preferably, the binder is polyvinyl alcohol; the mass of the binder is 0.5-3% of the total mass of the In2O3, tetravalent oxide, and high-valent oxide.

[0020] Preferably, the plasticizer is polyethylene glycol; the mass of the plasticizer is 0.5 to 1.5% of the total mass of the In2O3, tetravalent oxide, and high-valent oxide.

[0021] Preferably, the molding process is cold isostatic pressing; the pressure of the cold isostatic pressing is 150-300 MPa, and the holding time is 10-30 min.

[0022] The present invention also provides the application of the oxide-doped indium oxide target described in the above technical solution or the oxide-doped indium oxide target prepared by the preparation method described in the above technical solution in display panels or photovoltaic cells.

[0023] The present invention also provides a transparent conductive oxide thin film, which is prepared by sputtering deposition of an oxide-doped indium oxide-based target;

[0024] The oxide-doped indium oxide target is the oxide-doped indium oxide target described in the above technical solution or the oxide-doped indium oxide target prepared by the preparation method described in the above technical solution.

[0025] Preferably, the sputtered coating is a physical vapor deposition sputtered coating; the power of the sputtered coating is 120-200W; and the thickness of the sputtered coating is 80-120nm.

[0026] This invention provides an oxide-doped indium oxide-based target material, comprising the following components by mass:

[0027] In₂O₃ 94.5–99.3 parts,

[0028] The tetravalent oxides include 0.2–1.5 parts TiO₂, 0.2–1.5 parts ZrO₂, and 0.2–1.5 parts SiO₂.

[0029] 0.1 to 1 part of high-valence oxides; the high-valence oxides include one or more of CrO3, SeO3, WO3, MoO3 and Mn2O7.

[0030] This invention involves doping In₂O₃ with low concentrations of tetravalent oxides (TiO₂, ZrO₂, SiO₂) and hexavalent and heptavalent metal oxides (Cr(+6), Se(+6), Mo(+6), W(+6), Mn(+7)). The doped high-valence metal ions have significantly different valences from the substituted ions in indium oxide. Each doped hexavalent and heptavalent metal ion provides more free charge carriers than the tetravalent metal ion, thus improving doping efficiency and achieving a higher free charge carrier concentration at the same doping concentration. This invention reduces the total doping concentration and increases carrier mobility by using hexavalent and heptavalent metal ions. High mobility reduces long-wavelength absorption and increases the infrared transmittance of the material, thereby improving the visible and near-infrared transmittance of the prepared thin film while maintaining high mobility in the oxide-doped indium oxide-based target. The results of the examples show that the oxide-doped indium oxide-based target provided by the present invention has a relative density of ≥99%, an average grain size of <9μm, and a bulk resistivity of <0.6mΩ·cm, and has the characteristics of low doping and high density.

[0031] This invention also provides a method for preparing the above-mentioned oxide-doped indium oxide-based target. In this invention, TiO2, ZrO2, and SiO2 are used as sintering aids. During the sintering process, TiO2, ZrO2, and SiO2 can form a low-melting-point eutectic and a liquid phase at high temperature, which surrounds the indium oxide grain boundaries, greatly promoting particle rearrangement and mass transfer processes, thereby promoting sintering and reducing the temperature required for sintering.

[0032] This invention utilizes an oxide-doped indium oxide target to deposit a transparent conductive oxide thin film (TCO thin film) via physical vapor deposition (PVD), achieving a mobility of 70 cm⁻¹. 2 With an average transmittance of >88% in the 400–1200 nm range, this target material meets both high transmittance and high mobility requirements, exhibiting excellent optoelectronic properties. It can be directly applied to industries such as display panels and photovoltaic cells. Detailed Implementation

[0033] This invention provides an oxide-doped indium oxide-based target material, comprising the following components by mass:

[0034] In₂O₃ 94.5–99.3 parts,

[0035] The tetravalent oxides include 0.2–1.5 parts TiO₂, 0.2–1.5 parts ZrO₂, and 0.2–1.5 parts SiO₂.

[0036] 0.1 to 1 part of high-valence oxides; the high-valence oxides include one or more of CrO3, SeO3, WO3, MoO3 and Mn2O7.

[0037] Unless otherwise specified, the present invention does not have special requirements on the source of raw materials used, and commercially available products well known to those skilled in the art can be used.

[0038] The oxide-doped indium oxide target provided by this invention comprises 94.5 to 99.3 parts by weight of In₂O₃. As one embodiment, the In₂O₃ comprises 96.5 to 99.3 parts by weight, and in a specific embodiment, 98 to 99.2 parts by weight.

[0039] The oxide-doped indium oxide target provided by this invention comprises a tetravalent oxide. Based on 1 part by mass of In₂O₃, the tetravalent oxide comprises 0.2 to 1.5 parts by mass of TiO₂. As one embodiment, the TiO₂ comprises 0.2 to 1 part by mass, and in a specific embodiment, 0.2 to 0.6 parts by mass.

[0040] Based on 1 part by mass of In₂O₃, the tetravalent oxide includes 0.2 to 1.5 parts by mass of ZrO₂. In one embodiment, the ZrO₂ is 0.2 to 1 part by mass, and in a specific embodiment, it is 0.2 to 0.6 parts by mass.

[0041] Based on 1 part by mass of In₂O₃, the tetravalent oxide includes 0.2 to 1.5 parts by mass of SiO₂. In one embodiment, the SiO₂ comprises 0.2 to 1 part by mass, and in a specific embodiment, 0.2 to 0.6 parts by mass.

[0042] Based on 1 part by mass of In₂O₃, the oxide-doped indium oxide target provided by the present invention comprises 0.1 to 1 part by mass of a high-valence oxide; the high-valence oxide includes one or more of CrO₃, SeO₃, WO₃, MoO₃, and Mn₂O₇, with specific embodiments including CrO₃, or SeO₃, or WO₃ and Mn₂O₇, or MoO₃ and Mn₂O₇. As one embodiment, the high-valence oxide comprises 0.1 to 0.5 parts by mass, with specific embodiments including 0.2 to 0.4 parts.

[0043] This invention simultaneously dops with hexavalent and / or heptavalent metal oxides Cr(+6), Se(+6), Mo(+6), W(+6), and Mn(+7). The doped high-valence metal ions have significantly different valences from the substituted ions in indium oxide. Each doped high-valence metal ion provides more free charge carriers than a tetravalent metal ion, improving doping efficiency. At the same doping concentration, a higher free charge carrier concentration can be obtained, thus increasing carrier mobility. High doping concentrations reduce material mobility, but doping with high-valence elements can reduce the doping concentration, thereby increasing material mobility. High mobility reduces long-wavelength absorption, thereby increasing infrared transmittance. However, regardless of whether it is a tetravalent oxide or a hexavalent or heptavalent oxide, excessive addition will lead to a decrease in carrier mobility and near-infrared transmittance. Therefore, while ensuring the acquisition of high-density indium oxide-based targets, the doping concentration should be minimized as much as possible.

[0044] In one embodiment, the relative density of the oxide-doped indium oxide-based target is ≥99%, specifically 99.18–99.6% in this embodiment, the average grain size is <9μm, specifically 6.8–8.5μm in this embodiment, and the bulk resistivity is <0.6mΩ·cm, specifically 0.45–0.57mΩ·cm in this embodiment.

[0045] The present invention also provides a method for preparing the oxide-doped indium oxide-based target described in the above technical solution, comprising the following steps:

[0046] In2O3, tetravalent oxide, high-valent oxide, water and dispersant are mixed according to the mass parts, and the resulting slurry is ball-milled. The ball-milled slurry is then mixed with plasticizer and binder and granulated to obtain mixed oxide powder.

[0047] The mixed oxide powder is shaped, and the resulting target blank is degreased and sintered sequentially to obtain the oxide-doped indium oxide-based target.

[0048] In this invention, In2O3, tetravalent oxide, high-valent oxide, water and dispersant are mixed in parts by weight. The resulting slurry is ball-milled. The ball-milled slurry is then mixed with plasticizer and binder and granulated to obtain mixed oxide powder.

[0049] In one embodiment, the In2O3, tetravalent oxide, and high-valent oxide are all powders with a purity ≥ 99.99%; the dispersant is polyvinylpyrrolidone (PVP) or triethanolamine, specifically polyvinylpyrrolidone; the mass of the dispersant is 0.5-1.5% of the total mass of the In2O3, tetravalent oxide, and high-valent oxide, specifically 0.7-1% in the embodiment.

[0050] In one embodiment, the solid content of the mixed slurry is 45-60%, specifically 50-55% in this embodiment; the grinding balls used in the ball mill are zirconium beads; the diameter of the zirconium beads is 0.2-0.6 mm, specifically 0.2-0.4 mm in this embodiment; the rotation speed of the ball mill is 1500-2500 rpm, specifically 2000-2200 rpm in this embodiment; and the ball milling time is 2-5 hours, specifically 2-4 hours in this embodiment.

[0051] In one embodiment, the particle size of each component in the ball-milled slurry is <0.2μm.

[0052] In this invention, the ball mill serves to refine the powder particle size while mixing the slurry. The powder particle size mainly affects the molding and sintering process, and ultimately affects the sintering density of the product.

[0053] In one embodiment, the adhesive is one or more of polyvinyl alcohol, carboxymethyl cellulose, polyacrylamide, and polyacrylate, with polyvinyl alcohol (PVA) being a specific example; the mass of the adhesive is 0.5-3% of the total mass of the In2O3, tetravalent oxide, and high-valent oxide, with 1-2% being a specific example.

[0054] In one embodiment, the plasticizer is polyethylene glycol (PEG); the mass of the plasticizer is 0.5-1.5% of the total mass of the In2O3, tetravalent oxide and high-valent oxide, and in a specific embodiment it is 1-1.2%.

[0055] In one embodiment, the resulting ball-milled slurry, plasticizer, and binder are mixed under stirring conditions; the stirring speed is 40–80 rpm, and in a specific embodiment, it is 60–70 rpm. The present invention does not specifically limit the stirring time, as long as the materials are mixed evenly.

[0056] In one embodiment, the granulation is performed by spray drying; the outlet air temperature of the spray dryer is 95–110°C, specifically 100–105°C in this embodiment, and the inlet air temperature is 220–245°C, specifically 225–235°C in this embodiment. This invention does not specifically limit the spray drying time, continuing until the slurry is completely sprayed.

[0057] In one embodiment, the specific surface area of ​​the mixed oxide powder is 8–20 m². 2 / g, specifically 9-11m in the embodiments. 2 / g.

[0058] After obtaining the mixed oxide powder, the present invention shapes the mixed oxide powder, and the obtained target blank is degreased and sintered in sequence to obtain the oxide-doped indium oxide-based target.

[0059] In one embodiment, the molding is cold isostatic pressing; the pressure of the cold isostatic pressing is 150-300 MPa, specifically 200-280 MPa, and the holding time is 10-30 min, specifically 15-20 min.

[0060] In this invention, cold isostatic pressing can increase the density of the target blank, which is beneficial to making the sintered target more compact.

[0061] In one embodiment, the degreasing temperature is 550–750°C, and in a specific embodiment it is 600–650°C; the degreasing time is 5–24 hours, and in a specific embodiment it is 10–20 hours; the degreasing is carried out in air.

[0062] In this invention, the purpose of degreasing is to volatilize the dispersants, binders, and plasticizers added during mixing and granulation, thereby preventing subsequent venting from affecting sintering.

[0063] In one embodiment, the sintering temperature is 1200–1450°C, specifically 1300–1450°C, and the sintering time is 20–40 h, specifically 30–40 h; the sintering is carried out in an oxygen atmosphere; the oxygen pressure of the oxygen atmosphere is 0.05–0.1 MPa, specifically 0.1 MPa.

[0064] Sintering is the main process for densifying the target blank, forming a dense oxide target. This invention increases the density of the target by increasing the oxygen partial pressure in the sintering environment, which suppresses the decomposition of the oxide raw materials at high temperatures.

[0065] TiO2, ZrO2, and SiO2 can form a low-melting-point eutectic during sintering. At high temperatures, they form a liquid phase that surrounds the indium oxide grain boundaries, greatly promoting particle rearrangement and mass transfer, thereby promoting sintering and reducing the temperature required for sintering.

[0066] The present invention also provides the application of the oxide-doped indium oxide target described in the above technical solution or the oxide-doped indium oxide target prepared by the preparation method described in the above technical solution in display panels or photovoltaic cells.

[0067] The present invention also provides a transparent conductive oxide thin film, which is prepared by sputtering deposition of an oxide-doped indium oxide-based target;

[0068] The oxide-doped indium oxide target is the oxide-doped indium oxide target described in the above technical solution or the oxide-doped indium oxide target prepared by the preparation method described in the above technical solution.

[0069] In one embodiment, the sputtered coating is a physical vapor deposition sputtering coating; the power of the sputtering coating is 120-200W, specifically 180W in this embodiment; the sputtering gas used for the sputtering coating is argon, and the atmosphere used for the sputtering coating is a mixture of oxygen and hydrogen, wherein the volume ratio of oxygen to hydrogen is 1.5-2:1, specifically 1.8:1 in this embodiment; the thickness of the sputtered coating is 80-120nm, specifically 90-100nm in this embodiment.

[0070] As one embodiment, the carrier mobility of the transparent conductive oxide thin film is ≥70 cm⁻¹. 2 / (V·S), specifically 73-84cm in the embodiment. 2 / (V·S), the average transmittance in the range of 400 to 1200 nm is >88%, and in specific embodiments it is 88.4% to 90.1%.

[0071] The present invention does not impose any particular limitation on the application of the transparent conductive oxide film; any application method known in the art may be used.

[0072] The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments thereof, but they should not be construed as limiting the scope of protection of the present invention.

[0073] Example 1

[0074] S1. Preparation of mixed oxide powder:

[0075] In₂O₃ powder with a purity of 99.99% was mixed with other doped oxide powders with a purity of 99.99%. Water and a dispersant (PVP, 1% of the total mass of In₂O₃, tetravalent oxides, and high-valent oxides) were added to obtain a mixed slurry with a solid content of 50%. The slurry was ball-milled for 4 hours using 0.3mm zirconium beads at a speed of 2100 rpm. After ball milling, the particle size of each component in the slurry was <0.2μm. A binder (PVA, 2% of the total mass of In₂O₃, tetravalent oxides, and high-valent oxides) and a plasticizer (PEG, 1% of the total mass of In₂O₃, tetravalent oxides, and high-valent oxides) were added to the ball-milled slurry. The mixture was stirred at 60 rpm until homogeneous and then spray-dried until the slurry was completely sprayed. The inlet air temperature was 235℃ and the outlet air temperature was 105℃, resulting in a mixed oxide powder (specific surface area of ​​9-11 m²). 2 / g);

[0076] S2. Green body forming:

[0077] Using a rotating target mold, the above-mentioned mixed oxide powder is injected into the mold and formed using a cold isostatic press. The forming pressure is 280 MPa and the holding time is 20 min to obtain the target blank.

[0078] S3, Degreasing and Sintering:

[0079] The target blank was degreased in air at 650°C for 10 hours, and then sintered at high temperature in an oxygen atmosphere (oxygen pressure of 0.1 MPa) for 40 hours to obtain an oxide-doped indium oxide-based target.

[0080] Examples 2-9 and Comparative Examples 1-6

[0081] The difference between Examples 2-9 and Comparative Examples 1-6 and Example 1 lies in the different components and their contents, as shown in Table 1.

[0082] Table 1. Components and their contents in each embodiment and comparative example.

[0083]

[0084] Application Example 1

[0085] On a cleaned glass substrate, a TCO thin film was deposited using physical vapor deposition sputtering with an oxide-doped indium oxide target prepared in Example 1. The deposition power was 180W, the sputtering gas was Ar, and the deposition atmosphere was a H2 / O2 mixture with a volume ratio of oxygen to hydrogen of 1.8:1. The film thickness was 100nm, resulting in a transparent conductive oxide thin film (TCO thin film).

[0086] Application Examples 2-9 and Comparative Application Examples 1-6

[0087] The difference from Application Example 1 is that the oxide-doped indium oxide-based target prepared in Example 1 was replaced with the targets prepared in Examples 2-9 and Comparative Examples 1-6, respectively.

[0088] Performance testing

[0089] 1. Processing binding:

[0090] The targets prepared in the above embodiments and comparative examples were processed according to the dimensions in the drawings, bound to the titanium tubes, and subjected to ultrasonic testing. No dark cracks were found. Then, subsequent coating tests were carried out.

[0091] 2. Coating test:

[0092] The density of the target material was measured by Archimedes' displacement method, and the resistivity of the volume was measured by a four-probe tester.

[0093] On the cleaned glass substrate, TCO thin films were deposited by sputtering using the targets prepared in the above embodiments and comparative examples. The deposition power was 180W, the sputtering gas was Ar, the deposition atmosphere was a H2 / O2 mixed gas, and the film thickness was 100mm. The mobility of the film was tested using a Hall effect tester, and the transmittance of the film was tested using a UV spectrophotometer.

[0094] The performance test results of the targets prepared in each embodiment and comparative example, and the TCO films prepared therefrom, are shown in Table 2.

[0095] Table 2 Performance test results of each embodiment and comparative example

[0096]

[0097] As shown in the table above, the oxide-doped indium oxide-based targets prepared in Examples 1-9 of this invention have a relative density ≥99%, an average grain size <9μm, and a bulk resistivity of less than 0.6mΩ·cm. These targets exhibit low doping and high density characteristics, and the TCO thin films prepared from them achieve a carrier mobility of 70cm⁻¹. 2 With a transmittance of over / (V·S) and an average transmittance (400~1200nm) > 88%, it simultaneously meets the requirements of high transmittance and high mobility.

[0098] In Comparative Example 1, the performance was significantly reduced without the addition of hexavalent and heptavalent oxides. Comparative Examples 3-5 showed that the density was significantly affected when only hexavalent and heptavalent oxides were added, while tetravalent oxide sintering aids were missing, resulting in a reduction in the quality of the target material. Comparative Example 6 showed that the amount of tetravalent oxide sintering aid added was too small, and the sintering effect was limited, making it impossible to achieve densification, resulting in a relatively low sintering density.

[0099] In summary, by adding an appropriate amount of tetravalent oxide sintering aid and appropriate amounts of hexavalent and heptavalent oxides, this invention obtains a low-doped, high-density oxide-doped indium oxide target material, and the TCO film prepared from it achieves both high transmittance and high mobility.

[0100] Although the above embodiments have provided a detailed description of the present invention, they are only some embodiments of the present invention and not all embodiments. People can obtain other embodiments based on these embodiments without creative effort, and these embodiments all fall within the protection scope of the present invention.

Claims

1. An oxide-doped indium oxide-based target, characterized in that, By mass, it consists of the following components: In₂O₃ 98~99.2 parts, The tetravalent oxides are TiO2 (0.2-0.6 parts), ZrO2 (0.2-0.6 parts), and SiO2 (0.2-0.6 parts). 0.2 to 0.4 parts of high-valence oxides; the high-valence oxides are one or more of CrO3, SeO3, WO3, MoO3 and Mn2O7.

2. The oxide-doped indium oxide-based target according to claim 1, characterized in that, The oxide-doped indium oxide-based target has a relative density ≥99%, an average grain size <9μm, and a bulk resistivity <0.6mΩ·cm.

3. The method for preparing the oxide-doped indium oxide-based target according to claim 1 or 2, characterized in that, Includes the following steps: In₂O₃, tetravalent oxides, higher-valent oxides, water, and dispersant are mixed according to parts by weight, and the resulting slurry is ball-milled. The resulting ball-milled slurry, plasticizer, and binder are mixed and granulated to obtain mixed oxide powder. The mixed oxide powder is shaped, and the resulting target blank is degreased and sintered sequentially to obtain the oxide-doped indium oxide-based target.

4. The preparation method according to claim 3, characterized in that, The sintering temperature is 1200~1450℃, and the sintering time is 20~40h.

5. The preparation method according to claim 3, characterized in that, The binder is polyvinyl alcohol; the mass of the binder is 0.5-3% of the total mass of the In2O3, tetravalent oxide, and high-valent oxide.

6. The preparation method according to claim 3, characterized in that, The plasticizer is polyethylene glycol; the mass of the plasticizer is 0.5-1.5% of the total mass of the In2O3, tetravalent oxide and high-valent oxide.

7. The preparation method according to claim 3, characterized in that, The molding process is cold isostatic pressing; the pressure of the cold isostatic pressing is 150~300MPa, and the holding time is 10~30min.

8. The application of the oxide-doped indium oxide target according to claim 1 or 2 or the oxide-doped indium oxide target prepared by any one of claims 3 to 7 in display panels or photovoltaic cells.

9. A transparent conductive oxide thin film, characterized in that, The film was prepared by sputtering deposition using an oxide-doped indium oxide-based target. The oxide-doped indium oxide target is the oxide-doped indium oxide target according to claim 1 or 2, or the oxide-doped indium oxide target prepared by the preparation method according to any one of claims 3 to 7.

10. The transparent conductive oxide thin film according to claim 9, characterized in that, The sputtered coating is a physical vapor deposition sputtered coating; the power of the sputtered coating is 120~200W; the thickness of the sputtered coating is 80~120nm.

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