Vapor deposition apparatus
By setting up a shielding structure in the vapor deposition equipment to block the path between the cavity and the deposited material, the problem of reduced cavity cleanliness caused by target sputtering is solved, thereby improving the cleanliness inside the cavity and enhancing wafer stability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ZHEJIANG ICSPROUT SEMICONDUCTOR CO LTD
- Filing Date
- 2024-09-18
- Publication Date
- 2026-07-21
AI Technical Summary
During semiconductor manufacturing, the sputtering material from the target can reduce the cleanliness of the cavity during thin film deposition, leading to risks of wafer sticking, slippage, and breakage.
A shielding structure is installed in the vapor deposition equipment, located between the inner wall of the cavity and the target material, to block the path between the deposition material and the cavity, so that the deposition material is sputtered only in the area of the wafer to be sputtered.
It effectively reduces or avoids the sputtering of deposited materials into the cavity, improves the cleanliness of the cavity, and reduces the risk of wafer sticking, slippage, and breakage.
Smart Images
Figure CN119615097B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor technology, and more particularly to a vapor deposition apparatus. Background Technology
[0002] In semiconductor manufacturing, it is common to deposit thin films on the surface of wafers. During film deposition, material is sputtered onto the wafer surface from a target located above the wafer. This sputtering process reduces the cleanliness of the cavity inside the wafer.
[0003] In this context, how to provide technical solutions to improve the cleanliness of the cavity has become an urgent technical problem to be solved. Summary of the Invention
[0004] In view of this, embodiments of the present disclosure provide a vapor deposition apparatus that can improve the cleanliness of the cavity interior.
[0005] This disclosure provides a vapor deposition apparatus, comprising: a cavity having an opening, wherein a target is fixed in the opening and the target is used to sputter a deposition material; a stage disposed within the cavity and below the opening, for supporting a wafer; and a shielding structure disposed within the cavity, between the inner wall of the cavity and the target, to block the path between the cavity and the deposition material and expose the area of the wafer to be sputtered.
[0006] Optionally, a trapezoidal groove is provided on the inner wall of the cavity, the trapezoidal groove including a first groove and a second groove, the outer diameter of the first groove being larger than the outer diameter of the second groove; wherein, the target material is located above the bottom of the first groove, and the shielding structure is located between the second groove and the target material.
[0007] Optionally, the shielding structure includes: a first shielding member and a second shielding member, wherein the first shielding member is located between the second trench and the target material and is distributed along the circumference of the stage; the second shielding member is fastened to the first shielding member and exposes the area of the wafer to be sputtered.
[0008] Optionally, the first shielding member includes a bottom wall, a first side wall, and a second side wall, the first side wall and the second side wall being disposed opposite to each other and connected through the bottom wall; wherein, a protrusion is provided on the first side wall, the protrusion being engaged between the second groove and the target material.
[0009] Optionally, along a direction perpendicular to the surface of the stage, the top height of the first sidewall is higher than the top height of the second sidewall;
[0010] The top height of the second sidewall is higher than the top height of the platform.
[0011] Optionally, the target material is provided with a groove; the top of the first sidewall is engaged in the groove.
[0012] Optionally, the second shielding member includes a first portion and a second portion; wherein the first portion is located above the sidewall between the first sidewall and the second sidewall, the second portion is located on the second sidewall, and the projection of the second portion is at least partially located on the platform.
[0013] Optionally, the second portion has a protrusion facing the first portion on the side facing the stage, the protrusion being adapted to the shape of the stage.
[0014] Optionally, the vapor deposition apparatus further includes: a calibration component for calibrating the coaxiality of the shielding structure and the stage to determine the target position of the shielding structure; wherein the target position of the shielding structure is: the position of the shielding structure when the shielding structure and the stage are concentrically aligned.
[0015] Optionally, the calibration element has a first end and a second end, and the radial dimensions of the first end and the second end are different.
[0016] Compared with the prior art, the technical solution of the present disclosure has the following advantages:
[0017] In the vapor deposition apparatus provided in this embodiment, a shielding structure is provided in the cavity between the inner wall of the cavity and the target material. Since the shielding structure can block the path between the cavity and the deposition material, when the deposition material is sputtered to the area to be sputtered on the wafer through the target material, the deposition material can be reduced or avoided from sputtering into the cavity, thereby improving the cleanliness of the cavity. Attached Figure Description
[0018] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments of this disclosure or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1 A cross-sectional schematic diagram of a vapor deposition apparatus according to an embodiment of the present disclosure is shown.
[0020] Figure 2 A schematic diagram of the structure of a first shielding member according to an embodiment of the present disclosure is shown.
[0021] Figure 3 A schematic diagram of the structure of a second shielding member according to an embodiment of the present disclosure is shown.
[0022] Figure 4 A schematic diagram of the structure of a calibration component according to an embodiment of the present disclosure is shown.
[0023] Figure 5 A schematic diagram is shown to calibrate the concentricity of the shielding structure and the stage. Detailed Implementation
[0024] As described in the background section, the cleanliness of the cavity is reduced during the sputtering process. This is because the material deposition path is relatively chaotic during sputtering. In addition to being deposited on the wafer, some of the sputtered material is also sputtered to other parts around the cavity, such as the edge of the stage. This circumferential deposition phenomenon accumulates over time and forms a thick film at the edge of the stage, which can easily lead to wafer sticking, slippage, and breakage.
[0025] To address the aforementioned technical problems, this disclosure provides a vapor deposition apparatus, comprising: a cavity with an opening, wherein a target is fixed in the opening and the target is used to sputter a deposition material; a stage disposed within the cavity and below the opening, for supporting a wafer; and a shielding structure disposed within the cavity, between the inner wall of the cavity and the target, to block the path between the cavity and the deposition material and expose the area of the wafer to be sputtered.
[0026] By employing the vapor deposition apparatus of this disclosure, since the shielding structure can block the path between the cavity and the deposition material, when the deposition material is sputtered onto the area to be sputtered on the wafer through the target, the amount of deposition material sputtered into the cavity can be reduced or avoided, thereby improving the cleanliness of the cavity.
[0027] To make the above-described objects, features and advantages of this disclosure more apparent and understandable, the invention will now be described by way of example with reference to the accompanying drawings.
[0028] See Figure 1 The schematic cross-sectional view of a vapor deposition apparatus in an embodiment of this disclosure is shown below. Figure 1 As shown, a vapor deposition apparatus may include:
[0029] It has an opening ( Figure 1 The cavity 11 (not shown) has a target 12 fixed at its opening, and the target 12 sputters and deposits material.
[0030] The stage 13, which is located inside the cavity 11 and below the opening, carries the wafer W.
[0031] The shielding structure 14 is disposed inside the cavity 11, between the inner wall of the cavity 11 and the target material 12, to block the path between the cavity 11 and the deposited material and expose the area of the wafer W to be sputtered.
[0032] Specifically, when the target 12 sputters and deposits material, the shielding structure 14 is located in the path between the cavity 11 and the deposited material. The sputtered material will only be deposited in the area to be sputtered on the wafer W and the area formed by the shielding structure 14, thereby reducing or avoiding the sputtering of the deposited material into the cavity 11, thus improving the cleanliness of the cavity 11.
[0033] It should be noted that, Figure 1 The structure and dimensions of the cavity 11, target 12, stage 13 and shielding structure 14 shown are merely illustrative examples, used to illustrate how the path between the cavity 11 and the deposited material can be blocked by flexibly setting the position of the shielding structure 14 within the cavity 11. They should not be construed as limitations on this disclosure.
[0034] In some embodiments of this disclosure, the shielding structure 14 is detachably disposed between the inner wall of the cavity 11 and the target material 12, which facilitates the periodic replacement of the shielding structure 14, so that the vapor deposition equipment can be used for a long time and continuously to improve manufacturing efficiency.
[0035] For example, the shielding structure 14 can be replaced periodically according to the working time (KWH) of the material deposited by the vapor deposition equipment.
[0036] In one specific embodiment, when the working time (kWh) of the vapor deposition equipment for depositing material reaches 900, a new shielding structure 14 is replaced. That is, a replacement cycle is defined as 900 kWh.
[0037] In some embodiments of this disclosure, see below. Figure 1 The inner wall of the cavity 11 is provided with a trapezoidal groove T, which includes a first groove T1 and a second groove T2.
[0038] The first groove T1 is used to support and fix the target material 12, and the second groove T2 is used to support and fix the shielding structure 14.
[0039] In some embodiments of this disclosure, the outer diameter of the first groove T1 is larger than the outer diameter of the second groove T2, so that the shielding structure 14 is placed in the trapezoidal groove T, which facilitates the fixing of the shielding structure 14.
[0040] In some examples, when the shielding structure 14 is placed in the trapezoidal groove T, the trapezoidal groove T and the shielding structure 14 can be fixed by means of a threaded connection.
[0041] In some embodiments of this disclosure, when a trapezoidal groove T is provided on the inner wall of the cavity 11, the target material 12 is located above the bottom of the first groove T1, and the shielding structure 14 is located between the second groove T2 and the target material 12, thereby fixing the target material 12 and the shielding structure 14 on the inner wall of the cavity 11.
[0042] The target 12 refers to the material that is sputtered onto the sputtering region of the wafer W during the sputtering process, and is used to produce thin films, coatings or other materials.
[0043] In some embodiments of this disclosure, the target 12 may be a metal target. In some other examples, the target 12 may be at least one of an oxide target (e.g., titanium oxide, zinc oxide, aluminum oxide, etc.), a nitrate target (e.g., titanium nitrate, tungsten nitrate, etc.), a carbide target (e.g., titanium carbide, silicon carbide, etc.), and a silicide target (e.g., titanium silicide, tungsten silicide, etc.).
[0044] The stage 13 can be used to support the wafer W, and during the sputtering deposition of materials, the stage 13 can drive the wafer W to move (e.g., selective motion and up-and-down motion) to reduce the distance between the wafer W and the target 12.
[0045] Depending on the structure and type, the stage 13 can also have functions such as heating, cooling, rotation, clamping, and adsorption. Therefore, a suitable stage 13 can be selected according to different needs.
[0046] In one alternative example, stage 13 can be an electrostatic chuck.
[0047] The shielding structure 14 is used to block the path between the deposited material and the cavity 11, so that the deposited material cannot be deposited into the cavity 11, thereby improving the cleanliness of the cavity 11.
[0048] In some embodiments of this disclosure, the shielding structure 14 may include a first shielding member 141 and a second shielding member 142, wherein the shielding structure 14 is located between the second trench T2 and the target material 12 and is distributed along the circumferential direction of the stage 13; the second shielding member 142 is fastened to the first shielding member 141 and exposes the area of the wafer W to be sputtered.
[0049] That is, during sputtering and depositing of materials, while blocking the path between the cavity 11 and the deposited material, a deposited film layer can be formed on the wafer W.
[0050] In some embodiments of this disclosure, combined with Figure 1 See Figure 2 The schematic diagram shown below illustrates the structure of a first shielding member in an embodiment of this disclosure, as follows: Figure 1 and Figure 2As shown, the first shielding member 141 may include a bottom wall G3, a first side wall G1 and a second side wall G2, the first side wall G1 and the second side wall G2 are arranged opposite to each other and connected by the bottom wall G3.
[0051] In short, the cross-section of one side of the first shield 141 is U-shaped, so that when sputtering deposited material, the deposited material can be collected in the space provided by the U-shaped structure and will not be sputtered into the cavity 11.
[0052] In some embodiments, a protrusion G4 is provided on the first sidewall G1, and the protrusion G4 is engaged between the second groove T2 and the target material 12.
[0053] Specifically, a protrusion G4 is provided on the first sidewall G1, which can cooperate with the second groove T2 to fix the first shield 141 on the second groove T2.
[0054] As an example, both the protrusion G4 and the second groove T2 have threaded holes, and the threaded holes on the protrusion G4 and the second groove T2 are arranged opposite to each other, so that when the threaded holes of the two are aligned, the first shield 141 and the second groove T2 can be connected by screws.
[0055] In some other examples, other known connecting mechanisms can be used to achieve the connection between the first shield 141 and the second groove T2.
[0056] In some embodiments of this disclosure, the top height of the first sidewall G1 is higher than the top height of the second sidewall G2 in the direction perpendicular to the surface of the stage 13, which helps to reduce the difficulty of fastening the second shield 142 to the first shield 141; and by making the first shield 141 have a shape that is high on one side and low on the other side, it is easier for the deposited material to be sputtered into the space formed by the first shield 141, and the space occupied by the first shield 141 can be reduced.
[0057] In this case, the top height of the second sidewall G2 is higher than the top height of the stage 13. That is, there is a gap between the second sidewall G2 and the stage 13, which allows the wafer W to move freely in and out.
[0058] In some other embodiments, the top height of the first sidewall G1 and the top height of the second sidewall G2 may be the same. This disclosure does not impose specific limitations on this, as long as the first blocking member 141 can function as a blocking element.
[0059] It should be noted that, firstly, Figure 1 and Figure 2 The structure of the first blocking member 141 shown is for illustrative purposes only. For example, in Figure 1 and Figure 2In the first example, the first sidewall G1 is wider in the middle and narrower at both ends, and the contact area between the middle region and the top region is arc-shaped; in other examples, the shape of the first sidewall G1 can be a regular shape; secondly, Figure 2 Only a portion of the structure of the first shielding member 141 is shown; the complete structure of the first shielding member 141 is not shown.
[0060] In some embodiments of this disclosure, see below. Figure 1 When the target 12 is fixed at the opening, a groove C is provided on the target 12. The top of the first sidewall G1 is engaged in the groove C, which can prevent the sputtered deposited material located on the inner side of the target 12 (i.e. the side close to the shielding structure 14) from sputtering to other places, such as the deposited material sputtering onto the sealing ring on the outer side of the top of the first sidewall G1 (not shown), thereby affecting the sealing performance of the chamber 11.
[0061] In some examples, the inner diameter of the groove C is adapted to the outer diameter of the first sidewall G1. For example, the inner diameter of the groove C is the same as the outer diameter of the first sidewall G1; or, for another example, the inner diameter of the groove C is larger than the outer diameter of the first sidewall G1.
[0062] In some embodiments of this disclosure, combined with Figure 1 and Figure 2 See Figure 3 The schematic diagram shown below illustrates the structure of a second shielding member in an embodiment of this disclosure, as follows: Figures 1 to 3 As shown, the second shielding member 142 includes a first part P1 and a second part P2 that are fixedly connected. The first part P1 is located above the bottom wall G3 between the first side wall G1 and the second side wall G2, and the second part P2 is located on the second side wall G2. The projection of the second part P2 is at least partially located on the stage 13.
[0063] By making the first part P1 and the second part P2 span across the two sides of the second sidewall G2, and with the projection of the second part P2 at least partially located on the stage 13, it is possible to avoid sputtering material into the interior of the material cavity 11 and to protect the edge position of the stage 13, preventing excess material from being deposited onto the edge of the stage 13.
[0064] In some embodiments of this disclosure, the second part P2 has a protrusion P3 facing the first part P1 on the side facing the platform 13. The protrusion P3 is adapted to the shape of the platform 13, which can play the role of bevel and limit, and can facilitate docking with the platform 13, while preventing the second shield 142 from being excessively offset and unable to play the shielding role.
[0065] For example, if the second shielding member 142 is excessively offset, it will shift out of the first shielding member 141, and thus the first shielding member 141 will not be able to shield the edge of the stage 13, and the deposited material will be sputtered onto the stage 13.
[0066] In some embodiments, the protrusion P3 is located between the second sidewall G2 and the stage 13.
[0067] In some embodiments of this disclosure, the second part P2 is further provided with a pad P4, through which the second shield 142 contacts the stage 13. By providing the pad P4, on the one hand, the impact between the second shield 142 and the stage 13 can be buffered, thereby reducing wear and damage to the stage 13; on the other hand, the pad P4 can act as an isolation to prevent deposited material from being splashed into the cavity 11 from the contact position between the second shield 142 and the stage 13, further improving the cleanliness of the cavity.
[0068] It should be noted that, Figure 3 Only a portion of the structure of the second shielding member 142 is shown; the complete structure of the second shielding member 142 is not shown.
[0069] In practical applications, the inventors further discovered that when the shielding structure 14 is placed in the cavity 11, the concentricity between the shielding structure 14 and the stage 13 is poor. Since the wafer W is placed concentrically with the stage, the concentricity between the shielding structure 14 and the wafer W is also poor, resulting in varying lateral spacing between different areas of the shielding structure 14 and the wafer W. In areas with larger lateral spacing between the shielding structure 14 and the wafer W, there is still a risk of deposited material sputtering into the cavity 11.
[0070] Based on this, the vapor deposition equipment also includes a calibration device to calibrate the coaxiality of the shielding structure and the stage in order to determine the target position of the shielding structure.
[0071] In some embodiments of this disclosure, the target position of the shielding structure is: the position of the shielding structure when it is concentrically aligned with the platform.
[0072] In other words, by using the calibration components, the shielding structure can be concentrically aligned with the stage, and the circumferential spacing of the wafer is consistent with the lateral spacing of the shielding structure. Therefore, the edge of the stage can be completely shielded, preventing the deposited material from accumulating at the edge of the stage.
[0073] See in some examples Figure 4 The schematic diagram of a calibration component in an embodiment of this disclosure shows that the calibration component 15 may have a first end 151 and a second end 152, and the radial dimensions of the first end 151 and the second end 152 are different. Thus, the calibration component 150 can be used to calibrate different vapor deposition equipment, or can simultaneously calibrate the first shielding component and the second shielding component in the same vapor deposition equipment.
[0074] It is understandable that, firstly, in some other examples, the radial dimension of the first end 151 and the radial dimension of the second end 152 can be the same; secondly, Figure 4The radial dimensions of the first end 151 and the second end 152 shown are merely illustrative and are intended to indicate that the calibration piece 15 has two first ends 151 and second ends 152 of different dimensions, and should not be construed as limiting the present disclosure.
[0075] To facilitate understanding of the calibration process in the embodiments of this disclosure, the following exemplary description is provided with reference to the accompanying drawings.
[0076] Combination Figures 1 to 4 See Figure 5 The schematic diagram shown in this embodiment of the present disclosure illustrates a principle for calibrating the concentricity of the shielding structure and the stage. Figure 5 As shown, when the shielding structure 14 is placed in the cavity 11, the first ends 151 of multiple calibration elements 15 (e.g., three calibration elements 15) are placed in the gap between the second side wall G2 of the first shielding element 141 and the stage 13. During the calibration process, each calibration element 15 is in close contact with the stage 13. By adjusting the position of the first shielding element 141, the distance between each calibration element 15 and the first shielding element 141 is made the same, or the other end of each calibration element 15 is in close contact with the second side wall G2 of the first shielding element 141. This indicates that the first shielding element 141 and the stage 13 are concentrically aligned, and the first shielding element 141 can be fixed on the inner wall of the cavity 11.
[0077] When the first shielding member 141 is fixed, the second ends 152 of multiple calibration members 15 (e.g., three calibration members 15) are placed in the gap between the first part P1 of the second shielding member 142 and the first sidewall G1 of the first shielding member 141. During the calibration process, each calibration member 15 is in close contact with the first sidewall G1 of the first shielding member 141. By adjusting the position of the second shielding member 142, the spacing between each calibration member 15 and the second shielding member 142 is made the same, or the other end of each calibration member 15 is in close contact with the second sidewall G2 of the second shielding member 142. This indicates that the first shielding member 141 and the second shielding member 142 are concentrically aligned, that is, the second shielding member 142 and the stage 13 are concentrically aligned, so that the second shielding member 142 can be attached to the first shielding member 141.
[0078] It should be noted that the vapor deposition apparatus provided in this disclosure may also include other components, such as a gas supply system. For ease of description and to highlight the innovative aspects of this specification, components of the support stage that can be implemented using existing technologies have been omitted in this disclosure.
[0079] While the embodiments disclosed above are provided, the present invention is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.
Claims
1. A vapor deposition apparatus, characterized in that, include: A cavity having an opening, wherein a target is fixed in the opening, and the target is used to sputter and deposit material; A wafer carrier is disposed within the cavity and located below the opening. The shielding structure is disposed within the cavity and located between the inner wall of the cavity and the target material to block the path between the cavity and the deposition material and expose the area of the wafer to be sputtered. The cavity has a trapezoidal groove on its inner wall, which includes a first groove and a second groove. The outer diameter of the first groove is larger than the outer diameter of the second groove. The target material is located above the bottom of the first groove, and the shielding structure is located between the second groove and the target material. The shielding structure includes: a first shielding member and a second shielding member. The first shielding member is located between the second trench and the target material and is distributed circumferentially along the stage. The second shielding member is fastened to the first shielding member and exposes the area of the wafer to be sputtered. The first shielding member includes a bottom wall, a first side wall, and a second side wall. The first side wall and the second side wall are disposed opposite to each other and connected through the bottom wall. The first side wall has a protrusion that engages between the second trench and the target material. The second shielding member includes a first part and a second part that are fixedly connected. The first part is located above the bottom wall between the first side wall and the second side wall. The second part is located on the second side wall, and the projection of the second part is at least partially located on the stage. The second part has a pad, and the second shielding member contacts the stage through the pad. A calibration component is used to calibrate the coaxiality of the shielding structure and the stage to determine the target position of the shielding structure; wherein, the target position of the shielding structure is: the position of the shielding structure when it is concentrically aligned with the stage, so that the circumferential spacing of the wafer is consistent with the lateral spacing of the shielding structure, and the shielding structure completely blocks the edge of the stage; the calibration component has a first end and a second end, and the radial dimensions of the first end and the radial dimensions of the second end are different.
2. The vapor deposition apparatus according to claim 1, characterized in that, Along a direction perpendicular to the surface of the stage, the top height of the first sidewall is higher than the top height of the second sidewall; The top height of the second sidewall is higher than the top height of the platform.
3. The vapor deposition apparatus according to claim 2, characterized in that, The target material has grooves; the top of the first sidewall is engaged in the grooves.
4. The vapor deposition apparatus according to claim 1, characterized in that, The second portion has a protrusion facing the first portion on the side facing the platform, the protrusion being adapted to the shape of the platform.