Memory element and protection method thereof

CN119626290APending Publication Date: 2025-03-14NAN YA TECH
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Patent Information

Application Number
CN202311704560.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-09-13
Filing Date
2023-12-12
Publication Date
2025-03-14

AI Technical Summary

Technical Problem

There is a column hammer effect in dynamic random access memory (DRAM), which causes charge leakage in adjacent memory columns, which may change the content of the memory, and malicious operators can use this effect to attack.

Method used

A memory element is designed that includes a random number generator and a counter to randomly select and protect vulnerable memory columns. The counter starts counting down from the random number generated by the random number generator, when the counter reaches zero, obtains the address of the started memory column and updates the adjacent memory columns in the next update cycle for protection.

Benefits of technology

It effectively prevents the column hammer effect from destroying the memory contents, enhances the security and efficiency of memory components, and reduces memory failures caused by column hammer.

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Abstract

The invention provides a memory element and a protection method thereof. The memory element includes a controller configured to update one of a plurality of word lines during a first update period in response to an update signal; a random number generator configured to generate a first number; a counter configured to receive the first number as an initial value of the counter, where the counter is configured to be turned on in response to the update signal; and an address register configured to store an address of a first word line that is valid when the counter decreases to zero.
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