Method for preparing zinc sulfide passivation layer of quantum dot sensitized solar cell
Directed deposition of ZnS in TiO2/QDs mesoporous membrane by electrochemical method solves the problem of low ZnS load and significantly improves the efficiency of solar cells.
CN119626784APending Publication Date: 2025-03-14YANGTZE NORMAL UNIVERSITY
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Patent Information
- Application Number
- CN202411708578.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-27
- Publication Date
- 2025-03-14
Abstract
The invention discloses a method for preparing a zinc sulfide passivation layer of a quantum dot sensitized solar cell, and the method obtains a high-load ZnS passivation layer in a TiO2 / QDs mesoporous membrane, effectively inhibits the charge recombination between TiO2 / QDs / electrolyte interfaces, and remarkably improves the photoelectric conversion efficiency of the quantum dot sensitized solar cell. The method has the advantages of simple preparation process, low cost, easiness in industrial production and the like.
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