Display panel and display device

By differentiating the thickness and material selection of the first gate insulating layer, the problem of insufficient hydrogen replenishment in the active layer of the display panel is solved, improving the stability and display effect of the display panel and enhancing the performance of the thin-film transistor.

CN119630061BActive Publication Date: 2026-07-17TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD
Filing Date
2024-08-09
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Insufficient hydrogen replenishment capacity in the active layer of the display panel leads to excessive subthreshold swing and low mobility of thin-film transistors, affecting the stability and display effect of the display panel.

Method used

By differentiating the thickness of the first gate insulating layer, the thickness of the first sub-section is made greater than that of the second sub-section, ensuring that hydrogen can diffuse more easily into the active layer, enhancing the hydrogen replenishment capability. The use of silicon nitride and silicon oxynitride materials is combined to further improve the hydrogen replenishment effect.

Benefits of technology

It improves the stability and display effect of the display panel, reduces the subthreshold swing of the thin-film transistor, enhances the mobility, and improves the performance of the thin-film transistor.

✦ Generated by Eureka AI based on patent content.

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  • Figure CN119630061B_ABST
    Figure CN119630061B_ABST
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Abstract

This application discloses a display panel and a display device. The display panel includes an active layer, a first gate insulating layer, a first gate, and a second gate insulating layer. The first gate insulating layer covers the active layer. The first gate is disposed on the side of the first gate insulating layer away from the active layer. The second gate insulating layer is disposed on the side of the first gate insulating layer away from the active layer and covers the first gate. The second gate insulating layer contains hydrogen. The first gate insulating layer includes a first sub-part located between the active layer and the first gate and a second sub-part connected to the first sub-part. The thickness of the first sub-part is greater than the thickness of the second sub-part. This application allows hydrogen in the second gate insulating layer to diffuse more easily into the active layer through the second sub-part, improving the hydrogen replenishment capability of the active layer in the display panel and improving the stability and display effect of the display panel.
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