小尺寸垂直像素结构以及图像传感器

By employing an L-shaped PD structure and PDP layer isolation in the CMOS image sensor, the problems of charge leakage and quantum efficiency in small-sized vertical pixel structures are solved, achieving higher resolution and smaller pixel size.

CN119677199BActive Publication Date: 2026-07-17TIANJIN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
TIANJIN UNIV
Filing Date
2024-12-27
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

In existing CMOS image sensors, small-sized vertical pixel structures suffer from reduced quantum efficiency and charge leakage, which affect their performance.

Method used

An L-shaped PD structure is adopted, and a transverse electric field is formed by multiple N-type ion implantations to accelerate electron transfer. A PDP layer is added between the PD and FD regions for isolation to suppress charge leakage.

Benefits of technology

It effectively reduces pixel size, improves the resolution of CMOS image sensors, reduces charge leakage, and enhances pixel performance.

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Abstract

本发明公开小尺寸垂直像素结构及图像传感器。小尺寸垂直像素结构基于P型硅衬底制作，传输栅TG位于PD区域上方，PD区域采用L型结构，PD区域由PDN和DPDN组成；传输栅TG和PDN区域用PDP层隔开；传输栅TG下PDP、PDN、DPDN均为栅前离子注入；PD区域通过不同浓度的N型离子多次注入形成，PDP层采用不同浓度P型离子注入形成；对DPDN区域进行额外的N型离子注入DPDN‑NU，对DPDN区域进行非均匀掺杂，形成横向电场。本发明采用L型PD结构，形成横向电场，加速电子转移；添加PDP层注入，抑制垂直像素结构中PD区域和FD节点电荷泄露的问题。
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