Graphene transfer method based on nanoimprinting

Abstract

The application discloses a graphene transfer method based on nano-imprinting, and the method comprises the following steps: obtaining a photoresist layer / micro-nano structure layer / organic layer composite structure; covering the photoresist layer / micro-nano structure layer / organic layer composite structure on a graphene layer and performing nano-imprinting; peeling off a metal substrate to obtain an organic layer / micro-nano structure layer / photoresist layer / graphene layer composite structure; covering the organic layer / micro-nano structure layer / photoresist layer / graphene layer composite structure on a substrate surface to make the graphene layer adhere to the substrate and perform nano-imprinting, and curing the photoresist layer in the process of nano-imprinting; peeling off the organic layer / micro-nano structure layer / photoresist layer composite structure to obtain a graphene layer transferred to the substrate. The micro-nano structure layer increases the contact area between the micro-nano structure layer and the photoresist layer, and further increases the bonding force between the organic layer and the photoresist layer. The application realizes large-area graphene layer transfer based on nano-imprinting, and ensures the transfer quality.

Description

Technical Field

[0001] This invention belongs to the field of two-dimensional carbon materials technology, specifically relating to a graphene transfer method based on nanoimprinting. Background Technology

[0002] CVD (Chemical Vapor Deposition) is currently the mainstream method for preparing high-quality, large-area graphene materials. Graphene films are grown on copper foil surfaces. To characterize, apply, and fabricate devices using graphene films, it is often necessary to transfer the graphene films from copper foil to various target substrates such as quartz, silicon wafers, PET, and silicon oxide. To ensure the material properties of graphene, the transfer must be clean, intact, and smooth; that is, the transfer operation must not cause graphene sheet breakage, wrinkling, or residual organic contamination.

[0003] Currently, the main method for large-area transfer of graphene onto metal foil substrates is the "wet etching" transfer method. However, in the "wet etching" transfer method, after the etched graphene is transferred to the target substrate, liquid remains between the graphene surface and the substrate, and water molecules will contaminate the graphene.

[0004] Therefore, to address the aforementioned technical problems, it is necessary to provide a graphene transfer method based on nanoimprinting. Summary of the Invention

[0005] The purpose of this invention is to provide a graphene transfer method based on nanoimprinting, which can achieve large-area and clean graphene transfer through nanoimprinting.

[0006] To achieve the above objectives, a specific embodiment of the present invention provides the following technical solution:

[0007] A graphene transfer method based on nanoimprinting, the method comprising:

[0008] A substrate is provided, the substrate comprising an organic layer and a micro / nanostructure layer located above the organic layer, the micro / nanostructure layer comprising spaced-apart micro / nano units;

[0009] Photoresist is coated on a micro / nano structure layer to obtain a photoresist layer / micro / nano structure layer / organic layer composite structure;

[0010] A photoresist / micro / nano structure layer / organic layer composite structure is coated on a graphene layer grown directly on a metal substrate and nanoimprinted to bond the graphene layer to the photoresist layer.

[0011] A composite structure of organic layer / micro / nano structure layer / photoresist layer / graphene layer was obtained by peeling off the metal substrate;

[0012] An organic layer / micro / nano structure layer / photoresist layer / graphene layer composite structure is covered on the substrate surface to bond the graphene layer to the substrate and perform nanoimprinting, while the photoresist layer is cured during the nanoimprinting process.

[0013] The composite structure of organic layer / micro / nano structure layer / photoresist layer is peeled off to obtain a graphene layer transferred onto the substrate.

[0014] In one or more embodiments of the present invention, the method for fabricating the micro / nano structure layer includes:

[0015] A nanoimprint adhesive is spin-coated onto the surface of an organic layer, and the nanoimprint adhesive is deposited onto the surface of the organic layer to form a layer of adhesive.

[0016] A corresponding nanoimprint template is provided, and the nanoimprint template is aligned and imprinted with an organic layer having a stacked adhesive layer formed thereon.

[0017] After curing, the material is demolded to obtain a micro-nano structure layer on the surface of the organic layer.

[0018] In one or more embodiments of the present invention, the micro / nano unit includes columnar micro / nano units, which are arranged in an array at intervals; or,

[0019] The micro / nano unit includes wire grid-shaped micro / nano units, which are spaced apart along a first direction.

[0020] In one or more embodiments of the present invention, when the micro-nano unit is a columnar micro-nano unit, the height of the columnar micro-nano unit is greater than or equal to 1 μm, and the cross-sectional diameter of the columnar micro-nano unit is 500 nm to 1 μm.

[0021] When the micro / nano unit is a wire grid micro / nano unit, the height of the wire grid micro / nano unit is greater than or equal to 1 μm, the width of the wire grid micro / nano unit along the first direction is 500 nm to 1 μm, and the duty cycle of the wire grid micro / nano unit is 50%.

[0022] In one or more embodiments of the present invention, the photoresist layer is made of fluorinated modified acrylic resin.

[0023] In one or more embodiments of the present invention, the thickness of the photoresist layer between two adjacent micro / nano units is 2–3 μm; and / or,

[0024] The ratio of the height of the micro / nano unit to the thickness of the photoresist layer between two adjacent micro / nano units is 1:2 to 1:3.

[0025] In one or more embodiments of the present invention, the organic layer is made of polycarbonate.

[0026] In one or more embodiments of the present invention, when a photoresist / micro / nano structure layer / organic layer composite structure is coated on a graphene layer directly grown on a metal substrate and nanoimprinted, the nanoimprinting temperature is 90°C to 150°C, the nanoimprinting pressure is 15 bar to 30 bar, and the nanoimprinting time is 120 s to 300 s.

[0027] In one or more embodiments of the present invention, when the composite structure of organic layer / micro / nano structure layer / photoresist layer / graphene layer is covered on the substrate surface, and the graphene layer is bonded to the substrate and nanoimprinted, the nanoimprinting temperature is 90°C to 150°C, the nanoimprinting pressure is 15 bar to 30 bar, the nanoimprinting time is 60 s to 300 s, and the photoresist layer is UV cured for at least 30 s during the nanoimprinting process.

[0028] In one or more embodiments of the present invention, the substrate is made of silicon or silicon oxide; and / or,

[0029] The metal substrate includes copper foil.

[0030] Compared with the prior art, the graphene transfer method based on nanoimprinting of the present invention increases the contact area between the micro-nano structure layer and the photoresist layer by increasing the micro-nano structure layer, thereby increasing the bonding force between the organic layer and the photoresist layer, realizing the transfer of large-area graphene layers, and ensuring the transfer quality.

[0031] By breaking the bond between the nanoimprinted graphene layer and the photoresist layer, the residual photoresist layer on the surface after the graphene layer is transferred is avoided, and the graphene layer is also prevented from being transferred away by the composite structure of organic layer / micro / nano structure layer / photoresist layer during the peeling process.

[0032] The graphene layer transferred by this invention is clean, intact, and defect-free, and can avoid contamination of the graphene layer by water molecules. Attached Figure Description

[0033] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 This is a flowchart of the graphene transfer method based on nanoimprinting in Embodiment 1 of the present invention;

[0035] Figure 2 This is a schematic diagram of the micro / nano structure layer in Embodiment 1 of the present invention;

[0036] Figure 3 This is a partial top view of the micro / nano structure layer in Embodiment 1 of the present invention;

[0037] Figure 4 This is a schematic diagram of the micro / nano structure layer in Embodiment 1 of the present invention;

[0038] Figure 5 This is a structural diagram of the micro / nano structure layer and photoresist layer in Embodiment 1 of the present invention;

[0039] Figure 6 This is a structural diagram of the substrate in Embodiment 2 of the present invention;

[0040] Figure 7 This is a diagram showing the changes in the composite structure of the graphene transfer method based on nanoimprinting in Example 2 of the present invention;

[0041] Figure 8 This is a diagram showing the changes in the composite structure of the graphene transfer method based on nanoimprinting in Example 2 of the present invention;

[0042] Figure 9 This is a diagram showing the changes in the composite structure of the graphene transfer method based on nanoimprinting in Example 2 of the present invention;

[0043] Figure 10 This is a diagram showing the changes in the composite structure of the graphene transfer method based on nanoimprinting in Example 2 of the present invention;

[0044] Figure 11 This is a diagram showing the changes in the composite structure of the graphene transfer method based on nanoimprinting in Example 2 of the present invention;

[0045] Figure 12 This is the Raman spectrum of the graphene layer in Example 2 of the present invention. Detailed Implementation

[0046] To enable those skilled in the art to better understand the technical solutions of this invention, the technical solutions of the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this invention, and not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this invention.

[0047] Unless otherwise expressly stated, throughout the specification and claims, the term "comprising" or its variations such as "including" or "comprises" shall be understood to include the stated elements or components without excluding other elements or other components.

[0048] The terms "coupled," "connected," or "linked" in this specification include both direct and indirect connections. An indirect connection is a connection made through an intermediate medium, such as an electrical conduction medium, which may have parasitic inductance or capacitance. Indirect connections may also include connections made through other active or passive devices to achieve the same or similar functional purpose, such as connections through switches, follower circuits, or other circuits or components. Furthermore, in this invention, terms such as "first" and "second" are primarily used to distinguish one technical feature from another, and do not necessarily require or imply any actual relationship, quantity, or order between these technical features.

[0049] In the detailed description of this specification, reference is made to the accompanying drawings, which form a part thereof, wherein like reference numerals always denote like parts, and wherein exemplary embodiments are shown by way of example that may be implemented. It should be understood that other embodiments may be utilized, and structural or logical changes may be made, without departing from the scope of this disclosure. Therefore, the following detailed description should not be considered limiting.

[0050] The various operations in the specification may be described sequentially as multiple discrete actions or operations in a manner most conducive to understanding the claimed subject matter. However, the order of description should not be construed as implying that these operations must be sequentially related. Specifically, these operations may not be performed in the order presented. The described operations may be performed in a different order than in the described embodiments. Various additional operations may be performed in additional embodiments and / or the described operations may be omitted.

[0051] For the purposes of this disclosure, the phrase “A and / or B” means (A), (B), or (A and B). For the purposes of this disclosure, the phrase “A, B and / or C” means (A), (B), (C), (A and B), (A and C), (B and C), or (A, B and C).

[0052] Various components and devices may be referred to or shown in the singular (e.g., “MOS transistor”, “transistor”, “switch”, etc.) in this document, but only for the convenience of discussion, and any element referred to in the singular may include multiple such elements as taught herein.

[0053] The description uses the phrases "in this embodiment," "in other embodiments," or "in some embodiments," each of which may refer to one or more of the same or different embodiments. Furthermore, the terms "comprising," "including," "having," etc., used with respect to embodiments of this disclosure are synonymous.

[0054] Example 1:

[0055] like Figure 1As shown, this embodiment provides a graphene transfer method based on nanoimprinting, the method comprising:

[0056] S10. Provide a substrate, the substrate including an organic layer and a micro / nano structure layer located above the organic layer, the micro / nano structure layer including spaced micro / nano units;

[0057] S20. Coat photoresist on the micro-nano structure layer to obtain a photoresist layer / micro-nano structure layer / organic layer composite structure;

[0058] S30. A photoresist / micro / nano structure layer / organic layer composite structure is coated on a graphene layer grown directly on a metal substrate and nanoimprinted to bond the graphene layer to the photoresist layer.

[0059] S40. Peel off the metal substrate to obtain a composite structure of organic layer / micro / nano structure layer / photoresist layer / graphene layer;

[0060] S50. The composite structure of organic layer / micro / nano structure layer / photoresist layer / graphene layer is covered on the substrate surface to bond the graphene layer with the substrate and perform nanoimprinting, and the photoresist layer is cured during the nanoimprinting process.

[0061] S60. The composite structure of organic layer / micro / nano structure layer / photoresist layer is peeled off to obtain the graphene layer transferred to the substrate.

[0062] Furthermore, in this embodiment, the surface area of ​​the metal substrate and the graphene layer is smaller than the surface area of ​​other layer structures, so as to ensure that the graphene layer can be transferred in one go and avoid waste of the graphene layer.

[0063] Furthermore, in one embodiment, the method for preparing the micro / nano structure layer includes:

[0064] S101. Spin-coat the surface of the organic layer with nanoimprint adhesive and make the nanoimprint adhesive form a deposited adhesive layer on the surface of the organic layer.

[0065] S102. Provide a corresponding nanoimprint template and align the nanoimprint template with the organic layer on which the stacked adhesive layer is formed for imprinting.

[0066] S103. After curing, demold to obtain a micro-nano structure layer on the surface of the organic layer.

[0067] Furthermore, in this embodiment, the organic layer is made of polycarbonate, that is, the organic layer is a polycarbonate layer, and in one embodiment, the photoresist layer is made of fluorinated modified acrylic resin, that is, the photoresist layer is a fluorinated modified acrylic resin layer.

[0068] Furthermore, the micro / nano structure layer in this embodiment includes spaced-apart micro / nano units with a duty cycle of 50% and a height greater than or equal to 1 μm. It is understood that the micro / nano structure layer is imprinted on the polycarbonate layer, and the structural features of the micro / nano structure layer increase the contact area between the micro / nano structure layer and the fluorinated modified acrylic resin layer, thereby increasing the bonding force between the polycarbonate layer and the fluorinated modified acrylic resin layer.

[0069] like Figure 2 and Figure 3 As shown, in one embodiment, the micro / nano structure layer 20 includes columnar micro / nano units 21 arranged in an array. Further, the height H1 of the columnar micro / nano units 21 is greater than or equal to 1 μm, the cross-sectional diameter W1 of the columnar micro / nano units 21 is 500 nm to 1 μm, and the duty cycle of the columnar micro / nano units is 50%, that is, the cross-sectional diameter W1 of the columnar micro / nano units is equal to the distance W2 between two adjacent columnar micro / nano units 21 (and...). Figure 3 As shown in W2'), for example, if the cross-sectional diameter W1 of the columnar micro / nano unit is 700 nm, then the distance W2 between two adjacent columnar micro / nano units 21 (and Figure 3 The W2' shown is 700nm.

[0070] like Figure 4 As shown, in one embodiment, the micro / nano structure layer 30 includes wire-gate micro / nano units 31 spaced apart along a first direction A. Further, the height H2 of the wire-gate micro / nano units 31 is greater than or equal to 1 μm, the width W3 of the wire-gate micro / nano units 31 along the first direction A is 500 nm to 1 μm, and the duty cycle of the wire-gate micro / nano units 31 is 50%, meaning the width W3 of the wire-gate micro / nano units 31 along the first direction A is equal to the distance W4 between two adjacent wire-gate micro / nano units 31. For example, if the width W3 of the wire-gate micro / nano units 31 along the first direction A is 600 nm, then the distance W4 between two adjacent wire-gate micro / nano units 31 is 600 nm.

[0071] like Figure 5 As shown, when photoresist is applied to the micro / nano structure layer, the photoresist must cover at least all micro / nano units, that is, the photoresist completely fills the gaps between the micro / nano units.

[0072] In one embodiment, the thickness h1 of the photoresist layer 40 between two adjacent micro / nano units is 2–3 μm, and the ratio of the height of the micro / nano unit 31 to the thickness h1 of the photoresist layer 40 between two adjacent micro / nano units is 1:2 to 1:3. The thickness h2 of the photoresist layer 40 on the surface of the micro / nano unit is greater than 0.

[0073] The thickness h1 of the photoresist layer 40 between two adjacent micro / nano units refers to the distance between the first surface f1 and the second surface f2 of the photoresist layer, where the second surface f2 refers to the contact surface between the photoresist layer 40 and the two adjacent micro / nano units. The thickness h2 of the photoresist layer 40 on the surface of the micro / nano unit refers to the distance between the first surface f1 and the third surface f3 of the photoresist layer, where the third surface f3 refers to the contact surface between the photoresist layer and the upper surface of the micro / nano unit 31.

[0074] For example, if the height H2 of the wire grid micro / nano unit 31 is 1 μm, then the thickness h1 of the photoresist layer 40 between two adjacent wire grid micro / nano units 31 is 2–3 μm. For another example, if the height H1 of the columnar micro / nano unit 21 is 1.2 μm, then the thickness h1 of the photoresist layer 40 between two adjacent columnar micro / nano units 21 is 2.4–3.6 μm.

[0075] In one embodiment, when a photoresist / micro / nanostructure layer / organic layer composite structure is coated onto a graphene layer directly grown on a metal substrate and nanoimprinted, the nanoimprinting temperature is 90°C–150°C, the nanoimprinting pressure is 15 bar–30 bar, and the nanoimprinting time is 120 s–300 s. Through the above nanoimprinting, the graphene layer adheres to and bonds with the fluorinated modified acrylic resin layer. The metal substrate in this embodiment includes copper foil.

[0076] In one embodiment, when a composite structure of an organic layer / micro / nanostructure layer / photoresist layer / graphene layer is coated on the substrate surface, and the graphene layer is bonded to the substrate and then nanoimprinted, the nanoimprinting temperature is 90℃~150℃, the nanoimprinting pressure is 15bar~30bar, and the nanoimprinting time is 60s~300s. During the nanoimprinting process, the photoresist layer is UV-cured for at least 30s. Through the above nanoimprinting, the fluorinated modified acrylic resin layer cures under UV light and undergoes a condensation reaction, breaking the bond between the graphene layer and the fluorinated modified acrylic resin layer, and transferring the graphene layer onto the substrate. In this embodiment, the substrate material is either silicon or silicon oxide.

[0077] Example 2:

[0078] This embodiment provides a graphene transfer method based on nanoimprinting, the method comprising:

[0079] like Figure 6As shown, a substrate C1 is provided, which includes an organic layer 10 and a micro / nanostructure layer 30 located above the organic layer 10. Specifically, the organic layer 10 is an 8-inch circular polycarbonate layer. A nanoimprinting adhesive is spin-coated onto the surface of the polycarbonate layer 10, and then the micro / nanostructure layer 30 is nanoimprinted and cured. In this embodiment, the micro / nanostructure layer 30 includes wire grid-like micro / nano units 31 spaced apart along a first direction A. Each wire grid-like micro / nano unit 31 has a width of 1 μm and a height of 1 μm.

[0080] like Figure 7 As shown, photoresist 40 is coated on the micro / nano structure layer 30 to obtain a photoresist layer / micro / nano structure layer / organic layer composite structure C2. In this embodiment, the material of the photoresist layer 40 is fluorinated modified acrylic resin. Specifically, fluorinated modified acrylic resin is spin-coated onto the surface of the micro / nano structure layer 30 at a rotation speed of 3000 rpm. After spin-coating, the thickness h1 of the fluorinated modified acrylic resin layer 40 between two adjacent wire grid micro / nano units 31 is 3 μm.

[0081] like Figure 8 As shown, a photoresist / micro / nanostructure layer / organic layer composite structure C2 is coated onto a graphene layer 50 directly grown on a metal substrate 60 and then nanoimprinted to bond the graphene layer 50 to the photoresist layer. In this embodiment, the graphene layer 50 is grown on the surface of a 6-inch circular copper foil 60 using CVD (chemical vapor deposition), and the graphene layer 50 in this embodiment is in the form of a thin film. Specifically, a photoresist / micro / nanostructure layer / organic layer composite structure C2 spin-coated with fluorinated modified acrylic resin is coated onto the surface of the graphene layer 50. After coating, a nanoimprinter is used to imprint the graphene layer 50 at a temperature of 120°C and a pressure of 20 bar for 120 seconds, causing the graphene layer 50 to adhere to and bond with the fluorinated modified acrylic resin layer 40.

[0082] like Figure 9 As shown, the metal substrate 60 was peeled off to obtain a composite structure C3 consisting of an organic layer / micro / nano structure layer / photoresist layer / graphene layer.

[0083] like Figure 10As shown, an organic layer / micro / nano structure layer / photoresist layer / graphene layer composite structure C3 is applied to the surface of substrate 70 to bond graphene layer 50 to substrate 70, followed by nanoimprinting. During the nanoimprinting process, photoresist layer 40 is cured. In this embodiment, substrate 70 is an 8-inch circular silicon oxide layer 70. The organic layer / micro / nano structure layer / photoresist layer / graphene layer composite structure C3 is applied to the first surface of silicon oxide layer 70. Nanoimprinting is then performed at 60°C and 20 bar for 60 seconds, while simultaneously curing with UV irradiation for 30 seconds. Under UV irradiation, the fluorinated modified acrylic resin layer 40 cures and undergoes a condensation reaction. After curing, the surface energy of the fluorinated modified acrylic resin layer 40 decreases, causing the bond between graphene layer 50 and the fluorinated modified acrylic resin layer 40 to break. Simultaneously, graphene layer 50 adheres to the surface of silicon oxide layer 70.

[0084] like Figure 11 As shown, the organic layer / micro / nano structure layer / photoresist layer composite structure is peeled off to obtain the graphene layer 50 transferred onto the substrate 70. It is understandable that, due to the low surface energy of the cured fluorinated modified acrylic resin 40 and the relatively strong bonding force between the organic layer 10 / micro / nano structure layer 40 composite structure and the photoresist layer 40 (i.e., the fluorinated modified acrylic resin layer 40), the graphene layer 50 will remain on the surface of the silicon oxide layer 70 and will not be transferred away by the organic layer / micro / nano structure layer / photoresist layer composite structure during the peeling process.

[0085] like Figure 12 As shown, Raman spectroscopy was used to characterize the graphene layer 50 on the surface of the silicon oxide layer 70. It can be understood that the 2D peak is an important indicator for judging the quality of graphene. That is, a weak D peak and a strong 2D peak indicate that the quality of graphene is high. If the D peak is strong, it indicates that the quality of the transferred graphene is poor. Figure 12 The image above shows the Raman spectrum of graphene obtained using a traditional transfer method. Figure 12 Below is the Raman spectrum of the graphene layer obtained by the transfer method proposed in this invention. As can be seen from the Raman spectrum comparison, the D peak in the method proposed in this invention is weaker and the 2D peak is stronger, and there are no other impurity peaks, indicating that the graphene transferred by the method proposed in this invention is clean and of high quality.

[0086] Compared to wet graphene transfer processes, the graphene in this application does not come into contact with water, thus avoiding water molecules adhering to the graphene surface and causing contamination. Furthermore, this application enables the transfer of large-area graphene films fabricated by CVD.

[0087] As can be seen from the above technical solutions, the present invention has the following beneficial effects:

[0088] This invention increases the contact area between the micro / nano structure layer and the photoresist layer by using a micro / nano structure layer, thereby increasing the bonding force between the organic layer and the photoresist layer, realizing the transfer of a large area graphene layer, and ensuring the transfer quality.

[0089] By breaking the bond between the nanoimprinted graphene layer and the photoresist layer, the residual photoresist layer on the surface after the graphene layer is transferred is avoided, and the graphene layer is also prevented from being transferred away by the composite structure of organic layer / micro / nano structure layer / photoresist layer during the peeling process.

[0090] The graphene layer transferred by this invention is clean, intact, and defect-free, thus avoiding contamination of the graphene layer by water molecules.

[0091] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0092] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A graphene transfer method based on nanoimprinting, characterized in that, The method includes: A substrate is provided, the substrate comprising an organic layer and a micro / nanostructure layer located above the organic layer, the micro / nanostructure layer comprising spaced-apart micro / nano units; Photoresist is coated on a micro / nano structure layer to obtain a photoresist layer / micro / nano structure layer / organic layer composite structure; A composite structure of photoresist layer / micro / nano structure layer / organic layer is coated on a graphene layer grown directly on a metal substrate and nanoimprinted to bond the graphene layer to the photoresist layer. A composite structure of organic layer / micro / nano structure layer / photoresist layer / graphene layer was obtained by peeling off the metal substrate; An organic layer / micro / nano structure layer / photoresist layer / graphene layer composite structure is covered on the substrate surface to bond the graphene layer to the substrate and perform nanoimprinting, while the photoresist layer is cured during the nanoimprinting process. The composite structure of organic layer / micro / nano structure layer / photoresist layer is peeled off to obtain a graphene layer transferred onto the substrate.

2. The graphene transfer method based on nanoimprinting according to claim 1, characterized in that, The method for preparing the micro / nano structure layer includes: A nanoimprint adhesive is spin-coated onto the surface of an organic layer, and the nanoimprint adhesive is deposited onto the surface of the organic layer to form a layer of adhesive. A corresponding nanoimprint template is provided, and the nanoimprint template is aligned and imprinted with an organic layer having a stacked adhesive layer formed thereon. After curing, the material is demolded to obtain a micro-nano structure layer on the surface of the organic layer.

3. The graphene transfer method based on nanoimprinting according to claim 1 or 2, characterized in that, The micro / nano unit includes columnar micro / nano units, which are arranged in an array with spacing; or... The micro / nano unit includes wire grid-shaped micro / nano units, which are spaced apart along a first direction.

4. The graphene transfer method based on nanoimprinting according to claim 3, characterized in that, When the micro / nano unit is a columnar micro / nano unit, the height of the columnar micro / nano unit is greater than or equal to 1 μm, and the cross-sectional diameter of the columnar micro / nano unit is 500 nm to 1 μm; When the micro / nano unit is a wire grid micro / nano unit, the height of the wire grid micro / nano unit is greater than or equal to 1 μm, the width of the wire grid micro / nano unit along the first direction is 500 nm to 1 μm, and the duty cycle of the wire grid micro / nano unit is 50%.

5. The graphene transfer method based on nanoimprinting according to claim 1, characterized in that, The photoresist layer is made of fluorinated modified acrylic resin.

6. The graphene transfer method based on nanoimprinting according to claim 1 or 2, characterized in that, The organic layer is made of polycarbonate.

7. The graphene transfer method based on nanoimprinting according to claim 1, characterized in that, When a composite structure of photoresist layer / micro / nano structure layer / organic layer is coated on a graphene layer grown directly on a metal substrate and nanoimprinted, the nanoimprinting temperature is 90°C~150°C, the nanoimprinting pressure is 15 bar~30 bar, and the nanoimprinting time is 120 s~300 s.

8. The graphene transfer method based on nanoimprinting according to claim 1, characterized in that, When a composite structure of organic layer / micro / nano structure layer / photoresist layer / graphene layer is coated on the substrate surface and the graphene layer is bonded to the substrate for nanoimprinting, the nanoimprinting temperature is 90°C~150°C, the nanoimprinting pressure is 15 bar~30 bar, the nanoimprinting time is 60 s~300 s, and the photoresist layer is UV cured for at least 30 s during the nanoimprinting process.

9. The graphene transfer method based on nanoimprinting according to claim 1, characterized in that, The substrate is made of silicon or silicon oxide; and / or, The metal substrate includes copper foil.

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