A fast test system and method for PIN-FET detector voltage responsivity variation ratio

Abstract

The application belongs to the technical field of photoelectric detection, and particularly relates to a fast testing system and method for voltage responsivity change ratio of a PIN-FET detector, which comprises a microcontroller system board, a TEC temperature screening table, a temperature sensor, a light source and a power supply; the microcontroller system board is connected with the PIN-FET detector and the temperature sensor; the PIN-FET detector is arranged on the TEC temperature screening table; the PIN-FET detector is connected with the light source; the temperature sensor is used for acquiring the temperature of the PIN-FET detector and the temperature of the TEC temperature screening table; and the power supply is connected with the microcontroller system board and the PIN-FET detector. Compared with the prior art, the application solves the problem that there is no system and method for testing the voltage responsivity change ratio of a single or small amount of PIN-FET detectors in the prior art, and the application realizes the testing of the voltage responsivity change ratio of a single or small amount of PIN-FET detectors.

Description

Technical Field

[0001] This invention belongs to the field of photoelectric detection technology, specifically relating to a rapid testing system and method for the voltage response change ratio of a PIN-FET detector. Background Technology

[0002] The voltage responsivity of a PIN-FET detector is essentially the result of processing the "current responsivity" parameter of the PIN photodiode within the PIN-FET detector's internal circuitry. Therefore, the voltage responsivity of a PIN-FET detector is also a crucial parameter reflecting its photoelectric conversion efficiency. The voltage responsivity change ratio is an even more important parameter describing photoelectric conversion efficiency, directly demonstrating the processing performance of the PIN-FET detector.

[0003] Current methods for testing voltage susceptibility ratio typically involve using a temperature chamber and multi-channel testing equipment for batch testing. This approach is highly efficient for batch products and suitable for mass production, with most of the time spent on temperature adjustment and maintenance within the chamber. However, for scenarios requiring rapid testing of small numbers of devices, this approach results in a significant waste of human and material resources. Examples include rapid iteration and verification in the early stages of R&D, testing before the semi-finished product becomes airtight, and random inspections before finished product shipment—all of which involve performance testing of small quantities. Furthermore, the application process, queuing, and waiting time involved in voltage susceptibility testing significantly prolong the time to obtain results, and even borrowing an entire testing system can delay device production.

[0004] Therefore, there is a need to develop a system and method for rapid testing of PIN-FET detectors. Summary of the Invention

[0005] The purpose of this invention is to provide a rapid testing system and method for the voltage response ratio of a PIN-FET detector in order to solve at least one of the above-mentioned problems. This addresses the lack of a system and method for testing the voltage response ratio of a single or a small number of PIN-FET detectors in the prior art. This solution enables the testing of the voltage response ratio of a single or a small number of PIN-FET detectors.

[0006] The objective of this invention is achieved through the following technical solution:

[0007] The first aspect of this invention discloses a rapid testing system for the voltage responsivity change ratio of a PIN-FET detector, used to test the voltage responsivity change of a PIN-FET detector. The rapid testing system includes a microcontroller system board, a TEC temperature screening stage, a temperature sensor, a light source, and a power supply.

[0008] The microcontroller system board is connected to the PIN-FET detector and the temperature sensor respectively, and is used to acquire the output signals of the PIN-FET detector and the temperature sensor;

[0009] The PIN-FET detector is mounted on a TEC temperature screening platform, and the temperature state of the PIN-FET detector is changed by the TEC temperature screening platform; furthermore, the PIN-FET detector is connected to a light source, and the light-receiving state of the PIN-FET detector is changed by the light source.

[0010] The temperature sensors are used to acquire the temperature of the PIN-FET detector and the temperature of the TEC temperature screening station, respectively.

[0011] The power supply is connected to the microcontroller system board and the PIN-FET detector, respectively.

[0012] Preferably, the microcontroller system board includes a microcontroller chip and a human-machine interface component, wherein the microcontroller chip is connected to the human-machine interface component, a temperature sensor, and a PIN-FET detector.

[0013] Preferably, the microcontroller system board further includes an ADC module, which is connected between the microcontroller chip and the PIN-FET detector.

[0014] Preferably, the TEC temperature screening station further includes a thermal pad, which is disposed between the TEC temperature screening station and the PIN-FET detector.

[0015] Preferably, the temperature sensor used to obtain the temperature of the TEC temperature screening station is disposed on a thermally conductive pad.

[0016] Preferably, the rapid testing system further includes an adapter board, which is disposed on the TEC temperature screening platform, and the PIN-FET detector is mounted on the adapter board for leading out the pins of the PIN-FET detector through the connector of the adapter board.

[0017] Preferably, the PIN-FET detector is connected to the light source via a detector pigtail.

[0018] The second aspect of this invention discloses a rapid testing method for the voltage responsivity change ratio of a PIN-FET detector, employing any of the rapid testing systems described above;

[0019] The method includes the following steps:

[0020] S1: Connect the PIN-FET detector to the light source, set the temperature sensor, and then turn on the light source and power supply;

[0021] S2: Place the PIN-FET detector on the TEC temperature screening stage;

[0022] S3: Turn on the microcontroller system board and the TEC temperature screening station respectively, adjust the TEC temperature screening station to the first set temperature, and obtain the temperature of the PIN-FET detector through the microcontroller system board;

[0023] S4: When the temperature of the PIN-FET detector reaches the first target temperature, the first light output data is collected;

[0024] S5: Turn off the light source and collect the first no-light output data;

[0025] S6: Adjust the TEC temperature screening stage to the second set temperature and turn on the light source. When the temperature of the PIN-FET detector reaches the second target temperature, collect the second light output data.

[0026] S7: Turn off the light source and collect the second no-light output data;

[0027] S8: Calculate the voltage response change ratio.

[0028] Preferably, the voltage responsiveness change ratio is calculated using the following formula:

[0029]

[0030] In the formula:

[0031] ΔRe is the voltage responsiveness change ratio; Re2 is the voltage responsiveness at the first target temperature; Re1 is the voltage responsiveness at the second target temperature.

[0032] Preferably, the voltage responsiveness is calculated using the following formula:

[0033]

[0034] In the formula:

[0035] Re represents the voltage responsiveness; V1 represents the output voltage in the absence of light; V2 represents the output voltage in the presence of light; Φ e This refers to the power of the input light.

[0036] Compared with the prior art, the present invention has the following beneficial effects:

[0037] The test process is controlled and executed using a microcontroller system board. Based on the cooperation of multi-channel temperature monitoring, ADC module and other structures, the TEC temperature screening station is used to heat and cool the PIN-FET detector, realizing rapid testing of the high and low temperature performance of the PIN-FET detector. The method is simple and low in cost. The temperature screening station based on TEC semiconductor can achieve faster temperature changes and significantly shorten the test time.

[0038] This system and method can be used to test single, few, and many PIN-FET detectors. It is convenient to test, has rapid heating and cooling, and can achieve rapid measurement. Attached Figure Description

[0039] Figure 1 This is a schematic diagram of the structure of the rapid testing system for the voltage response change ratio of the PIN-FET detector of the present invention.

[0040] Figure 2 This is a flowchart illustrating the rapid testing method for the voltage response change ratio of the PIN-FET detector according to the present invention.

[0041] Figure 3 This is a schematic diagram of the output of the display module.

[0042] In the diagram: 1-Microcontroller system board; 2-Microcontroller chip; 3-ADC module; 4-Display module; 5-First button; 6-Second button; 7-Third button; 8-TEC temperature screening station temperature sensor; 9-PIN-FET detector temperature sensor; 10-TEC temperature screening station; 11-Thermal pad; 12-Adapter board; 13-PIN-FET detector; 14-Detector pigtail; 15-Light source; 16-Power supply. Detailed Implementation

[0043] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments.

[0044] For any matters not covered below, commercially available products or existing technologies may be used.

[0045] Example

[0046] like Figure 1-3 As shown, a rapid testing system for the voltage response change ratio of a PIN-FET detector is used to test the voltage response change of a PIN-FET detector 13. The rapid testing system includes a microcontroller system board 1, a TEC temperature screening stage 10, a temperature sensor, a light source 15, and a power supply 16.

[0047] The microcontroller system board 1 is connected to the PIN-FET detector 13 and the temperature sensor respectively, and is used to acquire the output signals of the PIN-FET detector 13 and the temperature sensor;

[0048] The PIN-FET detector 13 is disposed on the TEC temperature screening stage 10, and the temperature state of the PIN-FET detector 13 is changed by the TEC temperature screening stage 10; and the PIN-FET detector 13 is connected to the light source 15, and the light-receiving state of the PIN-FET detector 13 is changed by the light source 15.

[0049] The temperature sensors are used to acquire the temperature of the PIN-FET detector 13 and the temperature of the TEC temperature screening station 10, respectively.

[0050] The power supply 16 is connected to the microcontroller system board 1 and the PIN-FET detector 13, respectively.

[0051] A rapid test method for the voltage responsivity change ratio of a PIN-FET detector 13, using the aforementioned rapid test system;

[0052] The method includes the following steps:

[0053] S1: Connect the PIN-FET detector 13 to the light source 15, set the temperature sensor, and then turn on the light source 15 and the power supply 16;

[0054] S2: Place the PIN-FET detector 13 on the TEC temperature screening station 10;

[0055] S3: Turn on the microcontroller system board 1 and the TEC temperature screening station 10 respectively, adjust the TEC temperature screening station 10 to the first set temperature, and obtain the temperature of the PIN-FET detector 13 through the microcontroller system board 1;

[0056] S4: When the temperature of the PIN-FET detector 13 reaches the first target temperature, the first light output data is collected;

[0057] S5: Turn off light source 15 and collect the first no-light output data;

[0058] S6: Adjust the TEC temperature screening stage 10 to the second set temperature and turn on the light source 15. When the temperature of the PIN-FET detector 13 reaches the second target temperature, collect the second light output data.

[0059] S7: Turn off light source 15 and collect the second no-light output data;

[0060] S8: Calculate the voltage response change ratio.

[0061] More specifically, in this embodiment:

[0062] Figure 1This is a structural diagram of a rapid testing system for the voltage response change ratio of a PIN-FET detector 13. In this embodiment, the overall structure consists of a microcontroller system board 1, a TEC temperature screening stage 10, a thermal pad 11, an adapter board 12, a DC regulated power supply 16, and a light source 15. The microcontroller system board 1 is further composed of a microcontroller chip 2, an ADC module 3, a display module 4, a first button 5, a second button 6, a third button 7, a TEC temperature screening stage temperature sensor 8, and a PIN-FET detector temperature sensor 9.

[0063] The microcontroller system board 1 is mainly responsible for the acquisition, processing, and output of the PIN-FET detector 13's output voltage. The microcontroller chip 2 and the ADC module 3 are the main components for data acquisition and processing. The sampling leads of the ADC module 3 need to be connected to the output pins of the PIN-FET detector 13, or the sampling leads of the ADC module 3 can also be connected to the output pins of the PIN-FET detector 13 led out by the adapter socket on the adapter board 12. The ADC module 3 preferably uses a high-precision ADC module, such as the CS1242 series from Chipsea Technologies or the CBM76AD06 series from Chipwise Microelectronics, and other chips and their peripheral circuits.

[0064] The first button 5, the second button 6, the third button 7, and the display module 4 are all human-computer interaction components and the main means of human-computer interaction. Through these three buttons, trigger signals can be provided to the microcontroller chip 2 at different stages of the test. Upon receiving the trigger signals, the microcontroller chip 2 performs corresponding preset actions, such as collecting and outputting data, calculating and outputting data, etc., to output the results to the display module 4 for the operator to view. Figure 2 , Figure 3 As shown. This button includes, but is not limited to, mechanical buttons, touch buttons, touchscreen buttons, and similar switches or sensors with trigger functions.

[0065] The signal output leads of the TEC temperature screening station temperature sensor 8 and the PIN-FET detector temperature sensor 9 are connected to the pins of the microcontroller chip 2. The microcontroller chip 2 processes and converts the signals, outputting the temperature results to the display module 4. The TEC temperature screening station temperature sensor 8 is responsible for acquiring the real-time temperature of the TEC temperature screening station 10, and the PIN-FET detector temperature sensor 9 is responsible for acquiring the real-time temperature of the PIN-FET detector 13's housing. The TEC temperature screening station 10 is a semiconductor cooling and heating device based on the Peltier effect, used to achieve rapid temperature changes. It is responsible for regulating the temperature during the test, thereby controlling the temperature of the PIN-FET detector 13. The adapter board 12 brings out all the effective pins of the PIN-FET detector 13 for easy power supply connection and output voltage signal acquisition. The thermal pad 11 is used to increase thermal conductivity. The DC regulated power supply 16 supplies power to the microcontroller system board 1 and supplies power to the PIN-FET detector 13 through the adapter board 12. The detector pigtail 14 connects the PIN-FET detector 13 to the light source 15.

[0066] Further as Figure 1 As shown, the microcontroller chip 2, ADC module 3, display module 4, first button 5, second button 6, and third button 7 are all integrated on the microcontroller system board 1. The microcontroller chip 2 is electrically connected to the ADC module 3, display module 4, first button 5, second button 6, third button 7, PIN-FET detector 13, TEC temperature screening station temperature sensor 8, and PIN-FET detector temperature sensor 9 to exchange electrical signals. The PIN-FET detector 13 is mounted on the adapter board 12 and placed on the heat exchange surface of the TEC temperature screening station 10, so that the temperature of the PIN-FET detector 13 can be controlled by the TEC temperature screening station 10. Furthermore, a thermally conductive pad 11 is provided between the adapter board 12 and the TEC temperature screening station 10 to accelerate heat transfer and exchange. The TEC temperature screening station temperature sensor 8 is disposed on the thermally conductive pad 11, and the PIN-FET detector temperature sensor 9 is disposed on the surface of the PIN-FET detector 13. The PIN-FET detector 13 is also connected to the light source 15 via a detector pigtail 14. Power supply 16 is electrically connected to microcontroller system board 1 and adapter board 12 to supply power to various electrical components.

[0067] The rapid test method for the voltage response change ratio of the PIN-FET detector 13 used in this embodiment is as follows: Figure 1 , 2 As shown:

[0068] 1) Install the PIN-FET detector 13 onto the adapter board 12, connect the detector pigtail 14 to the light source 15 and turn on the light source 15, attach the PIN-FET detector temperature sensor 9 to the side of the PIN-FET detector 13, and turn on the DC regulated power supply 16.

[0069] 2) Place the adapter plate 12 on the heat-conducting pad 11 of the TEC temperature screening table 10, so that the bottom of the adapter plate 12 is in close contact with the heat-conducting pad 11 and fixed.

[0070] 3) Turn on the microcontroller system board 1 and TEC temperature screening station 10, and wait for initialization to complete;

[0071] 4) Set the TEC temperature screening station 10 to a low temperature (first set temperature), and fix the TEC temperature screening station temperature sensor 8 on the thermal pad 11 of the TEC temperature screening station 10.

[0072] 5) After the temperature of the PIN-FET detector 13 displayed on the display module 4 reaches the specified temperature (first target temperature), press the first button 5 to collect low-temperature light output (first light output data);

[0073] 6) Turn off the light source 15, press the first button 5, and collect the low-temperature no-light output (first no-light output data);

[0074] 7) Turn on the light source 15 and set the TEC temperature screening station 10 to the high temperature (second set temperature);

[0075] 8) After the temperature of the PIN-FET detector 13 on the display module 4 reaches the specified temperature (second target temperature), press the second button 6 to collect the high-temperature light output (second light output data);

[0076] 9) Turn off the light source 15, press the second button 6, and collect the high temperature no light output (second no light output data);

[0077] 10) Press the third button 7, and the voltage responsiveness change ratio calculation result will be displayed on the display module 4;

[0078] 11) Press the third button 7 again to reset the parameters and end the test.

[0079] More specific explanation:

[0080] Install the PIN-FET detector 13 onto the adapter board 12. Connect the PIN-FET detector 13's pigtail to the light source 15 and turn on the light source 15. Attach the PIN-FET detector temperature sensor 9 to the side of the PIN-FET detector 13 and turn on the DC regulated power supply 16. Place the adapter board 12 on the thermal pad 11 of the TEC temperature screening table 10, ensuring the bottom of the adapter board 12 is flush against the thermal pad 11 and properly positioned. Turn on the microcontroller system board 1 and the TEC temperature screening table 10, and wait for initialization to complete.

[0081] Set the TEC temperature screening station 10 to a low temperature (first set temperature), and fix the TEC temperature screening station temperature sensor 8 on the thermal pad 11 of the TEC temperature screening station 10. After the real-time temperature of the PIN-FET detector 13 displayed on the display module 4 reaches the specified temperature (first target temperature), press the first button 5 to collect low-temperature light output (first light output data); turn off the light source 15, press the first button 5 again, and collect low-temperature no-light output (first no-light output data).

[0082] Turn on the light source 15 and set the TEC temperature screening station 10 to the high temperature (second set temperature). After the display module 4 shows that the PIN-FET detector 13 temperature has reached the specified temperature (second target temperature), press the second button 6 to collect high-temperature light output (second light output data); turn off the light source 15, press the second button 6, and collect high-temperature no-light output (second no-light output data). Press the third button 7, and wait for the voltage response ratio calculation result to be displayed on the display module 4. Press the third button 7 again to reset the parameters, and the test ends.

[0083] The first set temperature and the first target temperature, as well as the second set temperature and the second target temperature, can have a certain numerical difference to fully account for heat exchange losses and heat dissipation. The specific values ​​should be determined according to the reagent testing requirements and the testing process.

[0084] The voltage responsiveness change ratio is calculated using the following formula:

[0085]

[0086] In the formula:

[0087] ΔRe is the voltage responsiveness change ratio, %; Re2 is the voltage responsiveness at the first target temperature (low temperature), V / W; Re1 is the voltage responsiveness at the second target temperature (high temperature), V / W;

[0088] Voltage responsiveness is calculated using the following formula:

[0089]

[0090] In the formula:

[0091] Re represents the voltage responsivity; V1 is the output voltage of the PIN-FET detector 13 in the absence of light; V2 is the output voltage of the PIN-FET detector 13 in the presence of light; Φ e The power of the input light from light source 15.

[0092] The "high temperature" and "low temperature" mentioned above refer only to the maximum and minimum temperatures within a test temperature range. They are relative values, meaning that "high temperature" refers to the maximum value within the temperature range and "low temperature" refers to the minimum value within the temperature range. The specific values ​​are determined according to the test requirements.

[0093] In the specific implementation of this embodiment:

[0094] The selected microcontroller chip 2 can be a chip with a built-in ADC module 3 for signal acquisition from various temperature sensors. If used for acquiring the output signal of the PIN-FET detector 13, it is recommended that the integrated ADC module 3 of the microcontroller chip 2 be 12 bits or higher, thus eliminating the need for an external ADC module 3. The purpose of the display module 4 is to allow users to better understand the system's operating status and output test results. Its size can be customized according to specific requirements, and its display content can be referenced. Figure 3 This includes, but is not limited to, real-time device output, low-temperature no-light output, low-temperature light output, high-temperature no-light output, high-temperature light output, voltage response change ratio, device temperature, and screening table temperature. Buttons 5, 6, and 7 are designed to better understand the program's functions and can be physical or virtual. Each button corresponds to a different operation step, and can be designed to provide different signal feedback through short presses, long presses, double-clicks, etc., as needed. These buttons can also be replaced by other types of buttons, switches, touch modules, touch display modules, etc.

[0095] The PIN-FET detector temperature sensor 9 and the TEC temperature screening stage temperature sensor 8 can be NTC thermistors, platinum resistance thermometers, or digital temperature sensors. When using NTC thermistors or platinum resistance thermometers, the ADC function of the microcontroller chip 2 must be used in conjunction with them, while this is not necessary when using digital temperature sensors.

[0096] The adapter board 12 leads out the pins of the PIN-FET detector 13 through the connectors on the PCB circuit board of the adapter board 12 for power supply and signal output. Vias and pads can be designed on the PCB circuit board to improve heat dissipation efficiency. In addition, the circuit and structure design of the adapter board 12 should place components on the top layer as much as possible so that the bottom layer can be in close contact with the thermal pad 11. Furthermore, due to the use of the adapter board 12, multiple PIN-FET detectors 13 can be easily tested simultaneously using this system.

[0097] The thermal pad 11 can be made of a softer material so that it can adhere more easily to the TEC temperature screening table 10 and the adapter plate 12 after being placed on the thermal pad 11.

[0098] The TEC temperature screening station 10 can be selected with different power and temperature differences according to actual needs. Furthermore, in actual use, the TEC temperature screening station 10 needs to be properly insulated and protected against heat, for example, by installing an insulation cover on the TEC temperature screening station 10 to reduce the impact of the environment on the cooling and heating effects. If the selected TEC temperature screening station 10 has a communication interface and communication module (such as a Bluetooth module, NFC module, WiFi module, etc.), a communication chip with the corresponding communication protocol can also be added to the microcontroller system board 1, thereby allowing direct control of the temperature of the TEC temperature screening station 10 through the microcontroller system board 1.

[0099] It is recommended to use a DC regulated power supply with low ripple and noise for power supply 16. Otherwise, it may affect the acquisition accuracy of ADC module 3. Furthermore, a desktop DC regulated power supply with three or more channels can be selected, or the power supply function can be integrated into the microcontroller system board 1.

[0100] The light source 15 is an adjustable light source 15, or a common light source 15 with an optical attenuator can also be used; the wavelength of the light source 15 needs to match the responsive band of the PIN-FET detector 13.

[0101] The detector pigtail 14 can be connected to the light source 15 via fiber optic patch cord splicing or adapter; alternatively, a mechanical optical switch can be used to connect the detector pigtail 14 and the light source 15. In this case, the control pin of the mechanical optical switch is connected to the microcontroller chip, and the on / off state of the mechanical optical switch is controlled by the program to adjust the on / off state of the input PIN-FET detector 13 light. Combined with the control of the temperature of the TEC temperature screening station 10, the voltage response of the PIN-FET detector 13 can be automatically tested.

[0102] In summary, the present invention provides a rapid testing system and method for the voltage response change ratio of a PIN-FET detector 13, applicable to R&D testing, semi-finished product inspection, and finished product sampling of PIN-FET detector 13 products. This method uses a microcontroller system board 1 for control, and utilizes a TEC temperature screening station 10 to heat and cool the PIN-FET detector 13, achieving rapid testing of the voltage response change ratio of the PIN-FET detector 13. Specifically: the detector pigtail 14 of the PIN-FET detector 13 is connected to a light source 15, and the PIN-FET detector 13 is connected to the test board. After power-on, parameters such as the output voltage of the PIN-FET detector 13, the shell temperature of the PIN-FET detector 13, and the temperature of the TEC temperature screening station 10 can be viewed on the display module 4. The adapter board 12 is placed on the thermal pad 11 of the TEC temperature screening station 10, ensuring the bottom of the adapter board 12 is in close contact with the thermal pad 11, and the testing process can begin. The advantages of this invention are that it achieves rapid testing of the voltage response change ratio of the PIN-FET detector 13, the method is simple and low-cost, and it significantly shortens the testing time.

[0103] The above description of the embodiments is provided to enable those skilled in the art to understand and use the invention. It will be apparent to those skilled in the art that various modifications can be made to these embodiments, and the general principles described herein can be applied to other embodiments without inventive effort. Therefore, the present invention is not limited to the above embodiments, and any improvements and modifications made by those skilled in the art based on the disclosure of the present invention without departing from the scope of the invention should be within the protection scope of the present invention.

Claims

1. A rapid testing system for the voltage responsivity change ratio of a PIN-FET detector, characterized in that, The rapid testing system for testing the voltage response change of the PIN-FET detector (13) includes a microcontroller system board (1), a TEC temperature screening stage (10), a temperature sensor, a light source (15), and a power supply (16). The microcontroller system board (1) is connected to the PIN-FET detector (13) and the temperature sensor respectively, and is used to acquire the output signals of the PIN-FET detector (13) and the temperature sensor; The TEC temperature screening station (10) is a semiconductor cooling and heating device based on the Peltier effect; the TEC temperature screening station (10) also includes a thermal pad (11), which is disposed between the TEC temperature screening station (10) and the PIN-FET detector (13); The PIN-FET detector (13) is placed on the TEC temperature screening station (10), and the temperature state of the PIN-FET detector (13) is changed by the TEC temperature screening station (10); and the PIN-FET detector (13) is connected to the light source (15), and the light-receiving state of the PIN-FET detector (13) is changed by the light source (15). The temperature sensors are used to acquire the temperature of the PIN-FET detector (13) and the temperature of the TEC temperature screening station (10), respectively; the temperature sensor used to acquire the temperature of the TEC temperature screening station (10) is disposed on the thermal pad (11), and the temperature sensor used to acquire the temperature of the PIN-FET detector (13) is disposed on the surface of the PIN-FET detector (13). The power supply (16) is connected to the microcontroller system board (1) and the PIN-FET detector (13) respectively.

2. The rapid testing system for the voltage responsivity change ratio of a PIN-FET detector according to claim 1, characterized in that, The microcontroller system board (1) includes a microcontroller chip (2) and a human-machine interaction component. The microcontroller chip (2) is connected to the human-machine interaction component, a temperature sensor, and a PIN-FET detector (13).

3. The rapid testing system for the voltage responsivity change ratio of a PIN-FET detector according to claim 2, characterized in that, The microcontroller system board (1) also includes an ADC module (3), which is connected between the microcontroller chip (2) and the PIN-FET detector (13).

4. The rapid testing system for the voltage responsivity change ratio of a PIN-FET detector according to claim 1, characterized in that, The rapid testing system also includes an adapter board (12), which is set on the TEC temperature screening station (10). The PIN-FET detector (13) is mounted on the adapter board (12) and is used to bring out the pins of the PIN-FET detector (13) through the connector of the adapter board (12).

5. A rapid testing system for the voltage responsivity change ratio of a PIN-FET detector according to claim 1, characterized in that, The PIN-FET detector (13) is connected to the light source (15) via a detector pigtail (14).

6. A rapid testing method for the voltage responsivity change ratio of a PIN-FET detector, characterized in that, The rapid testing system described in any one of claims 1 to 5 is employed; The method includes the following steps: S1: Connect the PIN-FET detector (13) to the light source (15), set the temperature sensor, and then turn on the light source (15) and the power supply (16). S2: Place the PIN-FET detector (13) on the TEC temperature screening station (10); S3: Turn on the microcontroller system board (1) and the TEC temperature screening station (10) respectively, adjust the TEC temperature screening station (10) to the first set temperature, and obtain the temperature of the PIN-FET detector (13) through the microcontroller system board (1); S4: When the temperature of the PIN-FET detector (13) reaches the first target temperature, the first light output data is collected; S5: Turn off the light source (15) and collect the first no-light output data; S6: Adjust the TEC temperature screening station (10) to the second set temperature and turn on the light source (15). When the temperature of the PIN-FET detector (13) reaches the second target temperature, collect the second light output data. S7: Turn off the light source (15) and collect the second no-light output data; S8: Calculate the voltage response change ratio.

7. A rapid testing method for the voltage responsivity change ratio of a PIN-FET detector according to claim 6, characterized in that, The voltage response change ratio is calculated using the following formula: In the formula: This refers to the voltage response change ratio; The voltage response at the first target temperature; The voltage response at the second target temperature.

8. A rapid testing method for the voltage responsivity change ratio of a PIN-FET detector according to claim 7, characterized in that, The voltage responsiveness is calculated using the following formula: In the formula: Voltage responsiveness; This is the output voltage when there is no light. This is the output voltage when there is light. This refers to the power of the input light.

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