Low-divergence-angle vertical cavity surface emitting laser and manufacturing method
CN119695631APending Publication Date: 2025-03-25ZHEJIANG RAYSEASC TECH CO LTD
Patent Information
- Application Number
- CN202411793319.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-09
- Publication Date
- 2025-03-25
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Figure CN119695631A_ABST
Abstract
The low-divergence-angle vertical-cavity surface-emitting laser comprises at least one light-emitting array, and each light-emitting array comprises at least one light-emitting unit; the light-emitting unit comprises a first electrode, a substrate layer, a bottom reflector, an active region, an electrical limiting layer, a top reflector and a second electrode; wherein the bottom reflecting mirror comprises a plurality of high-aluminum layers and a plurality of low-aluminum layers, the thickness of at least one low-aluminum layer is larger than lambda / 4, and lambda is the working wavelength of the low-divergence-angle vertical cavity surface emitting laser; the first electrode is directly or indirectly electrically matched with a low-aluminum layer of which the thickness is greater than lambda / 4; the current of the active region enters the first electrode through the low-aluminum layer with the thickness greater than lambda / 4; or the current of the first electrode enters the active region after passing through the low-aluminum layer with the thickness greater than lambda / 4.
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