A method for manufacturing a semiconductor device and a semiconductor device

Abstract

The application discloses a preparation method of a semiconductor device and the semiconductor device, and applies to the technical field of semiconductor devices, and comprises the following steps: obtaining a semiconductor structure; etching a photoresist to expose a side wall with a preset height; etching the semiconductor structure with the exposed side wall according to a preset etching time, so that part of a hard mask is left on the top of a pseudo gate of a second type transistor; performing a back etching process based on the etched semiconductor structure, and grinding the surface of the semiconductor structure after the back etching process is completed, so that the top of the pseudo gate of the second type transistor has a non-arch structure. By reducing the etching time, the arch degree of the top of the gate of the second type transistor is effectively reduced; in combination with a subsequent grinding process, the top of the pseudo gate of the second type transistor can have a non-arch structure, the hole after the pseudo gate is removed has a sufficient size to realize complete filling of the gate metal, and the semiconductor device has a high yield.

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