Position sensitive detector, method for manufacturing the same and method for positioning a light spot

By forming a border doped region around the photosensitive area and setting an output electrode, combined with a PN junction structure, the problems of low detection efficiency and poor linearity of extreme ultraviolet band detectors are solved, achieving higher position detection accuracy and stability.

CN119698121BActive Publication Date: 2026-07-21NANJING UNIV +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NANJING UNIV
Filing Date
2024-12-05
Publication Date
2026-07-21

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Abstract

The application discloses a position-sensitive detector and a preparation method and a light spot positioning method thereof, and relates to the technical field of semiconductor devices, and comprises a semiconductor substrate, the semiconductor substrate having opposite first and second surfaces; an epitaxial layer, the epitaxial layer being located on the first surface of the semiconductor substrate; a quadrilateral photosensitive region, the photosensitive region being located in a side surface of the epitaxial layer away from the semiconductor substrate; one of the photosensitive region and the epitaxial layer being N-type doped, and the other being P-type doped; a frame doped region having the same doping type as the photosensitive region, the frame doped region being located in a side surface of the epitaxial layer away from the semiconductor substrate and at a periphery of the photosensitive region; the frame doped region having frame vertex angles corresponding to vertices of the quadrilateral one by one; a plurality of output electrodes, the output electrodes being located on a side surface of the frame doped region away from the semiconductor substrate, and one output electrode being arranged on the surface of each frame vertex angle; and a bottom electrode, the bottom electrode covering the second surface.
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