Simulation analysis method for single event induced leakage current of wide bandgap semiconductor device

Abstract

The application discloses a simulation analysis method of single particle leakage of a wide band gap semiconductor device, which comprises the following steps: firstly, a geometric model of a power device to be simulated is constructed, the vacancy defect density of the power device is calculated, two-dimensional modeling and grid division are performed, an electrical model of the power device is established, and the electrical curve of the power device is fitted; then, a collision ionization model after high-energy particle incidence is introduced, the mobility and leakage degradation parameters are optimized, and a corresponding leakage degradation model of the power device is established; finally, damage mechanism analysis is performed, the change of the micro-physical parameters of the power device with time is extracted by changing the influence parameters in the radiation process, and the reinforcement and optimization of the power device are performed. The method can accurately simulate the physical process of the device irradiated by different particles, extract different micro-physical parameters in the leakage process of the wide band gap semiconductor device, and provide a technical basis for the radiation effect mechanism analysis and reliability evaluation of the wide band gap semiconductor device by establishing different leakage models.

Description

Technical Field

[0001] This invention relates to the field of radiation resistance analysis technology for semiconductor devices, and in particular to a simulation analysis method for single-particle leakage current in wide-bandgap semiconductor devices. Background Technology

[0002] With the development of semiconductor technology, power devices occupy an important position in modern electronic devices, especially in the fields of energy conversion and energy management. The main advantages of power devices are reflected in the following aspects: First, power devices possess highly efficient energy conversion capabilities. Whether it's MOSFETs or IGBTs, they can transmit power with extremely low energy loss, significantly improving system efficiency, especially in applications such as electric vehicles and solar inverters. Second, power devices can handle high voltage and high current, adapting to high-power applications such as industrial motor drives and grid management, making them widely applicable in high-voltage environments. Furthermore, power devices have fast switching speeds, especially MOSFETs, which perform excellently in high-frequency environments, providing higher performance and response speeds for devices such as DC-DC converters. The low heat loss design of power devices is also a major advantage, helping to reduce heat dissipation requirements, extend device lifespan, and improve the overall reliability of the system. With the application of wide bandgap semiconductor materials (such as SiC and GaN), power devices have achieved significant improvements in both performance and size, enabling them to perform better in high-temperature, high-voltage, and high-frequency environments. They have gained an irreplaceable position in various electronic and industrial systems, playing a crucial role, especially in the aerospace field.

[0003] When power devices are used in deep space exploration environments, the influence of cosmic particles can induce various malfunctions in spacecraft equipment. The main abnormal malfunctions include single-event effects, total dose effects, and displacement damage. Compared to power devices made of Si materials, when cosmic rays or high-energy particles (heavy ions) enter power devices made of wide-bandgap semiconductor materials, collisions with the materials within the device can cause transient or permanent changes in current or voltage in localized areas, leading to leakage current phenomena and even more serious damage, such as permanent leakage or short circuits. Therefore, it is crucial to develop a simulation method for analyzing single-event leakage current in power devices.

[0004] Current methods for monitoring single-particle leakage current (SPD) mainly utilize ground-based space environment simulation platforms to collect current data during irradiation through in-situ testing, followed by characterization experiments for analysis. This process is cumbersome and costly. Furthermore, leakage current in power devices is a complex process related to numerous factors such as the location, direction, energy, and bias of ion incident radiation, making the implementation of a series of experiments and characterizations extremely difficult. Moreover, it is impossible to target specific damage sites with appropriate reinforcement. Therefore, existing experimental methods suffer from limitations in monitoring SPD in power devices, high difficulty in designing and verifying device irradiation protection, low accuracy, and high research costs. Summary of the Invention

[0005] The problem to be solved by this invention is to provide a simulation analysis method for single-event leakage current of wide-bandgap semiconductor devices. Using TCAD software, a single-event leakage current model is established to simulate the leakage current change trend of power devices after irradiation. The method realizes the evolution of important electrical parameters such as internal electric field strength, leakage current density, and temperature of the device over time after particle irradiation, and further studies the leakage current damage mechanism of power devices in a targeted manner, thereby providing a research basis for the device's resistance to radiation damage.

[0006] This invention adopts the following technical solution: a simulation analysis method for single-event leakage current of wide-bandgap semiconductor devices, comprising the following steps:

[0007] S1. Construct the geometric model of the power device to be simulated and obtain the vacancy defect density of the power device;

[0008] S2. Using a semiconductor device 2D modeling tool, perform 2D modeling and mesh generation of the power device to be simulated; optimize the 2D model of the power device to be simulated, establish the electrical model of the power device, and fit the electrical curve of the power device.

[0009] S3. Input the vacancy defect density of the power device into the electrical model of step S2 to establish a defect model. Based on the relationship between the ionization coefficient and the avalanche effect factor, introduce the collision ionization model after high-energy particle incident, optimize the mobility and leakage degradation parameters, and establish the corresponding leakage degradation model of the power device.

[0010] S4. Based on the leakage current degradation model of power devices, damage mechanism analysis is carried out. By changing the influence parameters in the radiation process, the changes of the microscopic physical parameters of the power devices over time are extracted, and the power devices are strengthened and optimized.

[0011] Preferably, in step S1, the power device is a semiconductor device with a different wide bandgap. Based on the design and process parameters of the power device to be simulated, a geometric model of the power device is constructed using Monte Carlo software. The complete cascade collision physics process is used for simulation to simulate the damage process of the power device after being irradiated by particles, and the vacancy defect density of the power device is calculated.

[0012] The defect density of power devices is calculated as follows: In Monte Carlo simulation, based on the defect centers near the heterojunction interface, the vacancy density at a certain depth is calculated under different radiation fluences according to the number of vacancies generated by irradiated particles within a certain depth of the material, thus obtaining the vacancy defect density at the sensitive location of the power device.

[0013] Preferably, in step S2, the two-dimensional modeling tool for semiconductor devices is TCAD software. The two-dimensional model of the power device to be simulated is obtained through TCAD software, and meshing is performed to generate a meshed structure that matches the structure of the power device.

[0014] The generated two-dimensional model of the power device is optimized, the process parameters of the power device are calibrated, typical electrical curves of the power device are extracted, and the model is fitted with the corresponding electrical curves in the power device product manual to ensure that the electrical simulation results are consistent with the device product manual. The process parameters include: substrate, drift region, channel layer, barrier layer, bulk region, and source region size and concentration. The typical electrical curves include: transfer characteristic curve and off-state leakage characteristic curve.

[0015] Preferably, the two-dimensional model of the power device is optimized by changing the process parameters of each region of the power device as variables, judging the influence of each process parameter on the characteristics of the power device by the change range of the simulation curve, and taking the process parameter with the greatest influence as the primary variable for optimization. The simulation results are optimized and calibrated by adjusting the primary variable.

[0016] Preferably, in step S3, establishing the corresponding leakage current degradation model for the power device includes the following sub-steps:

[0017] S3.1 Input the vacancy defect data calculated in step S1 into the electrical model established in step S2, adjust the parameters related to heavy ion ionization, and establish a power device defect model.

[0018] S3.2 In the leakage degradation caused by heavy ion incident, the sensitive location of the power device generates an avalanche effect, which causes ionized charge deposition. Under the action of the electric field, the current rises sharply. Based on the relationship between the ionization coefficient α and the avalanche effect factor M, an electron-hole generation rate model is constructed on the basis of the power device defect model.

[0019] The ionization coefficient α is expressed as follows:

[0020] α=α n +α p

[0021] Where, α n α p These represent the electron ionization coefficient and the hole ionization coefficient, respectively.

[0022] The avalanche effect factor M is expressed as follows:

[0023]

[0024] Where d represents the length of the region where the electric field acts.

[0025] The electron-hole generation rate model is expressed as follows:

[0026]

[0027] Among them, J n J p Let represent electron current density and hole current density, respectively; q represent the charge of an electron; and G represent the generation rate of electron-hole pairs.

[0028] S3.3 The leakage current of the power device is proportional to the electron ionization coefficient and the hole ionization coefficient. By optimizing the material collision ionization coefficient, critical electric field coefficient, and leakage damage-related parameters, a collision ionization model after high-energy particle incident is established, as follows:

[0029]

[0030] Among them, A n B is the mobility coefficient. n is the electric field coefficient, n = 1, 2; E represents the critical electric field coefficient.

[0031] S3.4 After fitting the collision ionization model with the experimental results, the leakage current model of the power device is obtained;

[0032] The leakage current model of the power device is constructed based on the correlation between the mobility coefficient and the carrier mobility under high electric field, and the correlation between the electric field coefficient and the electric field strength for activating ionization. It is used to simulate the leakage current effect of the power device under different energy particles and different bias voltages. The leakage current damage mechanism is analyzed, and the evolution of the internal electrical parameters of the power device over time after particle irradiation is realized by simulating the leakage current change trend of the power device after irradiation. The internal electrical parameters include: electric field strength, leakage current density, and temperature.

[0033] Compared with the prior art, the present invention, employing the above technical solution, has the following technical effects:

[0034] 1. This invention uses TCAD software to simulate the single-event leakage effect of power devices caused by space-radiated particles, establishing a leakage current model for wide-bandgap semiconductor devices. The model shows good consistency with experimental results. Based on this leakage current model, the invention further simulates the leakage current effect of power devices under different particle energies and different bias voltages, studies the changes in the internal microscopic physical parameters of the devices, and proposes further hardening measures.

[0035] 2. Compared with previous methods, the simulation analysis method for single-event leakage current of wide bandgap semiconductor devices in this invention solves the problem of high cost of ground space simulation experiments or characterization tests, and can flexibly change experimental conditions to carry out corresponding evaluation studies of single-event leakage current effects for different wide bandgap semiconductor devices.

[0036] 3. The simulation analysis method for single-event leakage current of wide bandgap semiconductor devices in this invention provides a technical basis for the analysis of radiation effect mechanism and reliability assessment of wide bandgap semiconductor devices, and is of great significance for promoting the application of power devices in the aerospace field. Attached Figure Description

[0037] Figure 1 This is a flowchart of the simulation analysis method for single-particle leakage current of wide-bandgap semiconductor devices according to the present invention;

[0038] Figure 2 This is the SRIM simulation model of the GaN HEMT of this invention;

[0039] Figure 3 This is the TCAD simulation model of the GaN HEMT of this invention;

[0040] Figure 4 These are the transfer characteristics fitted to the GaN HEMT device of this invention;

[0041] Figure 5 This is the off-state leakage current characteristic fitted before irradiation of the GaN HEMT device of this invention;

[0042] Figure 6 This is the off-state leakage current characteristic fitted after irradiation of the GaN HEMT device of this invention;

[0043] Figure 7 This invention describes the change of GaN HEMT gate current over time under different gate biases.

[0044] Figure 8 This invention describes the change of the gate electric field of a GaN HEMT over time under different gate biases. Detailed Implementation

[0045] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of the application will be further described in detail below with reference to the accompanying drawings. The described embodiments are only a part of the embodiments involved in this invention. All non-innovative embodiments based on these embodiments by other researchers in the art are within the protection scope of this invention. Furthermore, the step numbers in the embodiments of this invention are only set for ease of explanation and do not limit the order of the steps. The execution order of each step in the embodiments can be adaptively adjusted according to the understanding of those skilled in the art.

[0046] When high-energy particles are incident on a semiconductor device, they undergo Rutherford scattering collisions with the semiconductor lattice, losing some energy. Compton interactions with the atomic nuclei transfer some of the high-energy particles' energy to the lattice, resulting in a large number of electron-hole pairs within the device and forming ionized tracks. These numerous electron-hole pairs deposit ionized charges at sensitive locations within the device, causing an increase in current under the influence of an electric field, and in severe cases, single-particle burn-out. Current methods for studying leakage damage in wide-bandgap semiconductor devices are as follows:

[0047] Using a ground-based space simulation device, heavy ion irradiation experiments were conducted on wide-bandgap semiconductor devices, and the leakage current curves of the devices after irradiation were monitored in situ, such as the drain current curve I. ds Gate current curve I gs If abnormal values ​​are found in the device, corresponding characterization experiments are required, such as electron microscopy to observe the internal microscopic damage of the wide-bandgap semiconductor device. Although this experimental method provides relatively accurate measurement data, the process is lengthy and complicated, and it ignores the impact of the specific physical processes generated by irradiation on the device, thus failing to provide corresponding guidance for subsequent radiation hardening work.

[0048] The simulation analysis method for single-particle leakage current in wide-bandgap semiconductor devices described in this invention can effectively solve this problem. By utilizing TCAD software, the physical processes of different particle radiation devices can be accurately simulated, and different microscopic physical parameters, such as electric field strength and current density, can be extracted during the leakage current process of wide-bandgap semiconductor devices. Compared with experimental methods, this method can establish different leakage current models for different particles, different incident angles, and different biases, saving more time and costs, and enabling better research on radiation hardening of wide-bandgap semiconductor devices.

[0049] In one embodiment of the present invention, a simulation analysis method for single-event leakage current of a wide-bandgap semiconductor device is provided, such as... Figure 1 As shown, it includes the following steps:

[0050] (1) Based on the design and process parameters of the power device to be simulated, a geometric model of the power device is constructed using Monte Carlo software (SRIM, etc.). The complete cascade collision physics process is used to simulate the damage process of the power device after being irradiated by particles, and the vacancy defect density at the sensitive location of the power device is further extracted.

[0051] (2) Based on the design and process parameters of the power device to be simulated, the power device to be simulated is modeled in two dimensions using the semiconductor device two-dimensional modeling tool of TCAD software, and a mesh is generated to produce a meshed device structure. The mesh structure matches the structure of the device.

[0052] (3) Optimize the power device model in step (2), calibrate the process parameters such as substrate, drift region, body region and source region size and concentration of the device, extract the typical electrical curves such as the transfer characteristic curve and off-state leakage current of the power device, fit them with the corresponding electrical curves in the device product manual, and finally make the electrical simulation results consistent with the device product manual.

[0053] (4) Based on the defect density calculated by Monte Carlo software, the defect density is input into the electrical model established by TCAD in step (3) to obtain the device defect model. The defect model is the basis for establishing the leakage degradation model.

[0054] (5) In the off-state leakage current characteristics, the leakage current mechanism of a device is often defined as follows: after the internal electric field reaches the breakdown electric field strength of the GaN material, the crystal lattice undergoes violent collisional ionization, generating a large number of electron-hole pairs, causing an avalanche effect in the device. Based on the electron-hole generation rate model: Based on the defect model in step (4), parameters related to leakage damage, such as the material collision ionization rate α and the critical electric field coefficient E, are optimized to establish a collision ionization model after high-energy particle injection. After fitting the model with experimental results, the leakage model of the power device is obtained. Simultaneously, according to the research objectives, relevant influencing parameters during the radiation process are specifically changed, and the microscopic physical parameters inside the device are extracted. The leakage damage mechanism is simulated and analyzed, providing theoretical support for device hardening.

[0055] Preferably, in one embodiment, a single-event leakage current simulation analysis is performed using a wide-bandgap semiconductor device, GaN HEMT, as an example.

[0056] First, such as Figure 2 The image shows a schematic diagram of the GaN HEMT structure calculated by SRIM software. To ensure sufficiently small errors, a simple device structure is used, and the steps are as follows:

[0057] Step 1-1: Build the SRIM platform and examine the vacancy generation behavior of a wide range of incident ion and target combinations by using the full cascade (FC) of stop and material ion range codes and the quick calculation damage (QC) option.

[0058] Steps 1-2: In this embodiment, the GaN HEMT model includes 4 layers.

[0059] The AlGaN barrier layer thickness was set to 15 nm, the channel layer thickness to 200 nm, and the buffer layer thickness to 2000 nm. Simulations were performed using 1332 MeV Ta ions perpendicularly incident on the device.

[0060] Steps 1-3: In GaN HEMT devices, the 2DEG at the heterojunction interface is the main factor affecting the device.

[0061] In SRIM simulations, defect centers near the heterojunction interface need to be considered. Based on the number of vacancies generated by Ta particles within a certain depth of the material, the vacancy density at a certain depth under different radiation fluences can be calculated, providing parameter input for the leakage current model in TCAD. Under 1332 MeV Ta ion irradiation, the Ga vacancies in AlGaN near the AlGaN / GaN heterojunction side are: When the ion flux is 1×10 7 cm -2 The Ga vacancy density produced at this injection level is 5 × 10⁻⁶. -3 ×10 8 ×1×10 7 =5×10 12 cm -3 .

[0062] Table 1 below shows the number of vacancies generated near the heterojunction interface under Ta ion irradiation.

[0063] Table 1: Number of AlGaN / GaN vacancies in GaN HEMT devices with Ta ion incidence at 1332 MeV

[0064]

[0065] Then, a schematic diagram of the GaN HEMT calculated by TCAD software is shown, as follows: Figure 3 As shown, unit cell simulation is used, and the specific steps are as follows:

[0066] Step 2-1: Based on the design and process parameters of the GaN HEMT device, the GaN HEMT device is modeled using a semiconductor device 2D modeling tool to obtain a 2D model of the GaN HEMT device. Then, meshing is performed to generate a meshed device structure, and the mesh structure matches the device structure.

[0067] Step 2-2: Optimize the process parameters of the calibrated device, such as substrate, channel layer, barrier layer, and electrode size and concentration, so that the electrical simulation results are consistent with the device product manual.

[0068] like Figure 4 The figure shows the transfer characteristic curve obtained from the simulation of the optimized electrical characteristics of the GaN HEMT device, with a threshold voltage of approximately 2.5V; Figure 5 The figure shows the off-state leakage current characteristic curve of the GaN HEMT device after optimization. The gate bias voltage is 0V and the leakage current value is about 1μA.

[0069] The specific optimization steps are as follows: change the size and doping concentration of each region of the device as variables, judge whether the parameter has a significant impact on the device characteristics by the magnitude of the change in the simulation curve, identify the parameters with significant impact as the first choice variables for optimization, and then achieve simple and efficient optimization and calibration of the simulation results by adjusting these variables.

[0070] Next, the vacancy defect data calculated in step 1 is input into the electrical model established in step 2. At the same time, based on the formula derivation, the parameters related to heavy ion ionization are adjusted to establish the corresponding leakage degradation model for wide bandgap semiconductor devices.

[0071] Step 3-1: In the GaN HEMT device, the vacancy defect calculation results from Step 1 are input into the electrical model established in Step 2 to obtain the defect model after heavy ion irradiation. The defect model is the basis for establishing the leakage degradation model.

[0072] Step 3-2: In the leakage current degradation caused by heavy ion incident, the main reason is the avalanche effect at the sensitive sites of the device, which causes ionized charge deposition and a sharp increase in current under the action of an electric field. Based on the ionization coefficient α (α=α... n +α p ) and avalanche effect factor The relationship between the leakage current and the electron ionization coefficient α of wide-bandgap semiconductor devices can be observed. n Hole ionization coefficient α p They are directly proportional; therefore, based on the defect model, the Selberherr Impact Ionization Model is introduced, which is based on the formula:

[0073]

[0074] In the leakage current model of wide bandgap semiconductor devices, the mobility coefficient A n The electric field coefficient B is related to the carrier mobility under high electric fields. nIt is related to the electric field strength that activates the ionization effect. In the process of leakage current in devices caused by radiated particles, by optimizing the physical parameters in the single-particle leakage current model, it is possible to obtain a good fit with the experimental results, thus obtaining a leakage current model for wide-bandgap semiconductor devices, such as... Figure 6 As shown.

[0075] Finally, based on the leakage current degradation model of power devices, the damage mechanism is analyzed.

[0076] In this embodiment, based on the leakage current model, the changes of microscopic physical parameters over time under different biases were extracted, such as... Figure 7 and Figure 8 As shown, Figure 7 This is the gate leakage current curve of the device after heavy ion irradiation. Figure 8 This is the gate electric field curve of the heavy ion irradiated device.

[0077] It can be observed that the greater the gate bias, the stronger the radiation damage and the more severe the device leakage. Based on the electric field distribution, it can be found that the damage is severe in the gate region of the device, which is a sensitive area of ​​the device. In future work, this region can be specifically hardened and optimized to improve the device's radiation resistance.

[0078] In summary, this invention provides a method for simulating leakage current damage to power devices based on TCAD software, addressing the radiation damage caused by heavy ions in space. It innovatively utilizes TCAD software to establish a single-particle leakage current model, and then simulates the leakage current variation trend of power devices after irradiation. This method realizes the evolution of important electrical parameters such as internal electric field strength, leakage current density, and temperature over time after particle irradiation, allowing for more targeted research into the leakage current damage mechanism of power devices, thus providing a research foundation for the radiation damage resistance of devices.

[0079] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A simulation analysis method for single-event leakage current in wide-bandgap semiconductor devices, characterized in that, Includes the following steps: S1. Construct the geometric model of the power device to be simulated and obtain the vacancy defect density of the power device; S2. Using a semiconductor device 2D modeling tool, perform 2D modeling and mesh generation of the power device to be simulated; optimize the 2D model of the power device to be simulated, establish the electrical model of the power device, and fit the electrical curve of the power device. S3. Input the vacancy defect density of the power device into the electrical model of step S2 to establish a power device defect model. Based on the relationship between the ionization coefficient and the avalanche effect factor, construct an electron-hole generation rate model on the basis of the power device defect model. ionization coefficient , means as follows: ； in, , These represent the electron ionization coefficient and the hole ionization coefficient, respectively. The avalanche effect factor M is expressed as follows: ； Where d represents the length of the region where the electric field acts; The electron-hole generation rate model is expressed as follows: ； in, , Let represent electron current density and hole current density, respectively; q represents the charge of an electron; and G represents the generation rate of electron-hole pairs. A collisional ionization model after high-energy particle incident is introduced, and leakage degradation parameters, including mobility, are optimized to establish a corresponding leakage degradation model for power devices. S4. Based on the leakage current degradation model of power devices, damage mechanism analysis is carried out. By changing the influence parameters in the radiation process, the changes of the microscopic physical parameters of the power devices over time are extracted, and the power devices are strengthened and optimized.

2. The simulation analysis method for single-event leakage current of wide-bandgap semiconductor devices according to claim 1, characterized in that, In step S1, the power device is a semiconductor device with different wide bandgap. Based on the design and process parameters of the power device to be simulated, a geometric model of the power device is constructed using Monte Carlo software. The complete cascade collision physics process is used for simulation to simulate the damage process of the power device after being irradiated by particles and to calculate the vacancy defect density of the power device.

3. The simulation analysis method for single-event leakage current of wide-bandgap semiconductor devices according to claim 2, characterized in that, The method for calculating the defect density of the power device is as follows: In Monte Carlo simulation, based on the defect center near the heterojunction interface, the vacancy density at a certain depth under different radiation fluences is calculated according to the number of vacancies generated by irradiated particles within a certain depth of the material, thus obtaining the vacancy defect density at the sensitive location of the power device.

4. The simulation analysis method for single-event leakage current of wide-bandgap semiconductor devices according to claim 1, characterized in that, In step S2, the semiconductor device two-dimensional modeling tool is TCAD software. The two-dimensional model of the power device to be simulated is obtained through TCAD software, and meshing is performed to generate a meshed structure that matches the structure of the power device.

5. The simulation analysis method for single-event leakage current of wide-bandgap semiconductor devices according to claim 1, characterized in that, In step S2, the generated two-dimensional model of the power device is optimized, the process parameters of the power device are calibrated, the typical electrical curves of the power device are extracted, and the model is fitted with the corresponding electrical curves in the power device product manual so that the electrical simulation results are consistent with the device product manual. The process parameters include: substrate, drift region, channel layer, barrier layer, bulk region, and source region dimensions and concentrations; the typical electrical curves include: transfer characteristic curves and off-state leakage characteristic curves.

6. The simulation analysis method for single-event leakage current of wide-bandgap semiconductor devices according to claim 5, characterized in that, In step S2, the two-dimensional model of the power device is optimized by changing the process parameters of each region of the power device as variables, judging the influence of each process parameter on the characteristics of the power device by the change amplitude of the simulation curve, and taking the process parameter with the greatest influence as the primary variable for optimization. The simulation results are optimized and calibrated by adjusting the primary variable.

7. The simulation analysis method for single-event leakage current of wide-bandgap semiconductor devices according to claim 5, characterized in that, In step S3, a corresponding leakage current degradation model for the power device is established, including the following sub-steps: S3.1 Input the vacancy defect data calculated in step S1 into the electrical model established in step S2, adjust the parameters related to heavy ion ionization, and establish a power device defect model. S3.2 In the leakage current degradation caused by heavy ion incident, an avalanche effect occurs at the sensitive location of the power device, causing ionized charge deposition. Under the action of an electric field, the current rises sharply. According to the ionization coefficient... The relationship between the avalanche effect factor M and the electron-hole generation rate model is constructed based on the power device defect model. S3.3 The leakage current value of the power device is proportional to the electron ionization coefficient and hole ionization coefficient. Optimize the material collision ionization coefficient, critical electric field coefficient and leakage damage related parameters, and establish a collision ionization model after high-energy particle incident. S3.4 After fitting the collision ionization model with the experimental results, the leakage current model of the power device is obtained.

8. The simulation analysis method for single-event leakage current of wide-bandgap semiconductor devices according to claim 7, characterized in that, In step S3.3, the collision ionization model is represented as follows: ； ； in, The mobility coefficient, The electric field coefficient is n = 1, 2; This represents the critical electric field coefficient.

9. The simulation analysis method for single-event leakage current of wide-bandgap semiconductor devices according to claim 7, characterized in that, In step S3.4, the leakage current model of the power device is constructed based on the correlation between the mobility coefficient and the carrier mobility under high electric field, and the correlation between the electric field coefficient and the electric field strength for activating ionization effect. It is used to simulate the leakage current effect of the power device under different energy particles and different bias voltages. Leakage damage mechanism analysis was conducted, and the evolution of internal electrical parameters of power devices over time was realized by simulating the leakage current change trend of power devices after irradiation. The internal electrical parameters include: electric field strength, leakage current density, and temperature.

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