Method and reaction system for oxide thin film reconditioning

Abstract

The application provides a method and a reaction system for re-oxidizing an oxide film. The method comprises the following steps: introducing a starting gas into a reaction system to form an initial plasma environment through glow discharge; introducing water vapor into the initial plasma environment in a pulse mode, and the water vapor is activated into plasma to re-oxidize the surface of the oxide film in the reaction system; stopping the glow discharge and pumping the residual gas in the reaction system; performing a reduction process on the native oxide and the metal oxide on the surface of a substrate; and repeating all the above steps until the number of particles in the reaction system reaches a preset target.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and more particularly to a method for re-repairing oxide thin films. Background Technology

[0002] In the semiconductor manufacturing field, during processes involving the removal of natural oxides and metal oxides from wafer surfaces (such as using hydrogen to remove copper oxide from wafer surfaces), the oxide films within the reaction system are easily eroded by active groups and detached. This phenomenon occurs frequently, leading to particulate contamination problems.

[0003] To address this technical challenge, the industry currently employs the method of using materials with low hydrogen recombination rates (such as quartz) within the reaction system. However, these materials are expensive and fragile, which greatly limits their widespread application in the industrial field. In addition, the industry also uses a method of introducing an oxygen source for re-repair, but accurately controlling the degree of re-oxidation in actual operation is a major challenge, and existing technologies are prone to inducing over-oxidation, thereby weakening the efficiency of subsequent reduction processes. Summary of the Invention

[0004] To overcome the shortcomings of existing technologies, this invention proposes a method for the re-repair of oxide thin films based on pulsed injection glow discharge. This method not only effectively solves the problem of particulate contamination caused by oxide film detachment, but also precisely controls the amount of oxygen injected, avoiding over-oxidation and thus significantly improving the efficiency of subsequent reduction processes.

[0005] This invention provides a method for re-repairing oxide thin films, including but not limited to the following steps:

[0006] An initiating gas is introduced into the reaction system to induce glow discharge and form an initial plasma environment.

[0007] In the initial plasma environment, water vapor is pulsedly introduced, and the water vapor is excited into plasma and re-repairs the surface of the oxide film in the reaction system;

[0008] Stop the glow discharge and evacuate the residual gas in the reaction system;

[0009] A reduction process is performed on the natural oxides and metal oxides on the substrate surface.

[0010] Repeat all the aforementioned steps until the number of particles in the reaction system reaches the preset target.

[0011] In one embodiment, the substrate is transferred to the reaction system before the ignition gas is introduced for glow discharge.

[0012] In one embodiment, the water vapor being excited into plasma and re-repairing the surface of the oxide film within the reaction system includes:

[0013] The water vapor is ionized and excited by utilizing the high-energy discharge characteristics of the initial plasma environment, decomposing into oxygen ions, oxygen atoms, and hydroxyl radicals, which have strong oxidizing properties.

[0014] The surface of the oxide film is then re-oxidized;

[0015] A protective layer is formed on the surface of the oxide film.

[0016] In one embodiment, the process for reducing the natural oxides and metal oxides on the substrate surface includes using hydrogen-active groups to perform a reduction reaction on the natural oxides and metal oxides.

[0017] In one embodiment, the reaction system includes a remote plasma source and a reaction chamber connected to the remote plasma source.

[0018] In one embodiment, introducing an initiating gas into the reaction system to perform glow discharge and form an initial plasma environment includes:

[0019] The remote plasma source is activated, and the ignition gas is used as a precursor gas to initiate ignition discharge.

[0020] The flow rate of the ignition gas is controlled within the range of 2000-5000 sccm;

[0021] Maintain the pressure within the reaction system to less than 500 mtorr;

[0022] The glow discharge time is maintained at more than 2 seconds.

[0023] In one embodiment, the pulsed introduction of water vapor includes:

[0024] The gas flow rate of the single-pulse steam injection is controlled within 20-100 sccm;

[0025] The duration of a single pulse of steam introduction should be maintained within the range of 3-20 seconds.

[0026] In one embodiment, stopping the glow discharge and evacuating the residual gas in the reaction system includes:

[0027] Shut down the remote plasma source;

[0028] The pressure within the reaction system is controlled to be less than 500 mtorr;

[0029] Keep the evacuation time greater than 5 seconds.

[0030] In one embodiment, the ignition gas comprises an inert gas.

[0031] In one embodiment, the ignition gas comprises argon and / or helium.

[0032] The present invention also provides a reaction system, comprising:

[0033] Remote plasma source;

[0034] The reaction chamber is connected to the remote plasma source;

[0035] The control system for controlling the remote plasma source and the reaction chamber includes a memory and a processor. The memory stores computer instructions that can be executed on the processor. When the processor executes the computer instructions, it performs the oxide film re-repair method as described above.

[0036] The method and reaction system for oxide film re-repair of the present invention have the following beneficial effects:

[0037] Firstly, the invention employs a precise water vapor pulse injection glow discharge technology. After the initial gas discharge stabilizes, a trace amount of water vapor is precisely injected via pulses to repair the oxide film inside the reaction system. This pulse injection technology not only achieves precise control over the amount of water vapor but also avoids the impact of residual water vapor on subsequent reduction steps, thereby improving the overall reliability and stability of the process.

[0038] Secondly, it effectively suppresses excessive oxidation. This invention, through pulsed injection of small amounts of water vapor, successfully repairs oxide films while preventing excessive oxidation on the surface of the processed sample (substrate). This not only protects the integrity of the oxide film but also improves the efficiency of subsequent reduction steps.

[0039] Third, the present invention first introduces pure inert gas as the ignition gas, which significantly reduces the difficulty of plasma source glow discharge and overcomes the technical obstacle of gas mixing uniformity. Attached Figure Description

[0040] The above-described invention and the following detailed description will be better understood when read in conjunction with the accompanying drawings. It should be noted that the drawings are merely examples of the claimed invention. In the drawings, the same reference numerals represent the same or similar elements.

[0041] Figure 1 A flowchart of a method for re-repairing oxide thin films according to an embodiment of the present invention is shown;

[0042] Figure 2This illustrates the results of pulse-injection glow discharge re-oxidation according to an embodiment of the present invention;

[0043] Figure 3 A graph showing the relationship between the number of re-oxidation cycles and the number of particles according to an embodiment of the present invention is shown. Detailed Implementation

[0044] The following detailed description of the features and advantages of the present invention provides sufficient information for any person skilled in the art to understand and implement the invention. Furthermore, based on the specification, claims, and drawings disclosed herein, those skilled in the art can easily understand the related objectives and advantages of the invention. Although the description of the invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may arise based on the claims of the invention. To provide a thorough understanding of the invention, numerous specific details will be included in the following description. The invention may also be implemented without using these details. Moreover, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0045] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0046] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0047] It is understood that while terms such as "first," "second," and "third" may be used herein to describe various components, channels, assemblies, regions, layers, and / or parts, these components, channels, assemblies, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, channels, assemblies, regions, layers, and / or parts. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0048] As indicated in this application and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" are not specifically singular and may include plural forms. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of explicitly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.

[0049] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that such numbers used in the description of embodiments are modified in some examples with the terms "approximately," "approximately," or "generally." Unless otherwise stated, "approximately," "approximately," or "generally" indicates that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, numerical parameters should take into account specified significant digits and employ a general method of digit reservation. Although the numerical ranges and parameters used to confirm their breadth of scope in some embodiments of this application are approximate values, in specific embodiments, such values ​​are set as precisely as feasible.

[0050] Furthermore, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic related to at least one embodiment of the application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.

[0051] In the semiconductor manufacturing field, during processes involving the removal of natural oxides and metal oxides from wafer surfaces (such as using hydrogen to remove copper oxide from wafer surfaces), the oxide films within the reaction system are easily eroded by active groups and detached. This phenomenon occurs frequently, leading to particulate contamination problems.

[0052] This invention addresses the low re-repair efficiency of oxide thin films by proposing a highly efficient and low-cost re-repair protection strategy. Through scientific design and precise control, a stable protective layer is constructed on the coating surface. This protective layer not only effectively resists the erosion of active groups and reduces particulate contamination, but also effectively prevents potential obstacles to subsequent reduction processes caused by excessive oxidation. The oxide thin film re-repair method of this invention significantly improves re-repair efficiency, contributing to the optimization and upgrading of semiconductor manufacturing processes.

[0053] Figure 1A flowchart illustrating a method for re-repairing oxide thin films according to an embodiment of the present invention is shown. The method includes, but is not limited to, the following steps.

[0054] Step 101: Transfer the substrate into the reaction system.

[0055] In one embodiment, the reaction system includes a remote plasma source and a reaction chamber connected to the remote plasma source.

[0056] Step 102: Introduce ignition gas to perform glow discharge, forming a uniform and stable initial plasma environment.

[0057] Water vapor cannot be directly converted into plasma through ignition discharge; it requires an inert gas (such as argon or helium) as a precursor gas to initiate the ignition discharge, thus playing a role in both initiation and assistance. In the initial stage of the discharge, the inert gas is excited under the influence of an electric field, forming an initial plasma environment. This environment provides the necessary conditions for the subsequent ionization and excitation of water vapor, allowing water molecules to further dissociate and ionize within the plasma atmosphere formed by the inert gas, ultimately transforming into the plasma state.

[0058] In one embodiment, the ignition gas is an inert gas, including but not limited to argon, helium, etc.

[0059] In one embodiment, the flow rate of the ignition gas is 2000-5000 sccm.

[0060] In one embodiment, the pressure within the reaction system is maintained at less than 500 mtorr.

[0061] In one embodiment, the discharge time of the pure ignition gas is greater than 2 seconds.

[0062] Step 103: A small amount of water vapor is pulsed in, which is excited into plasma and re-repairs the surface of the oxide film in the reaction system.

[0063] Water vapor can be ionized and excited in a high-energy discharge environment, decomposing into oxygen ions (O3) which have strong oxidizing properties. 2 The method utilizes the oxidizing properties of ionized and excited water vapor to re-oxidize the surface of oxide films in the reaction chamber and the chamber of a remote plasma source, forming a protective layer. This achieves surface repair of the oxide film, solving the problem of oxide films being eroded and reduced by active groups, leading to changes in the surface structure of the coating or even local peeling, thus forming tiny particles.

[0064] However, to ensure that the oxide film can undergo the re-oxidation process uniformly and fully, while avoiding water vapor residue, the present invention strictly controls the injection amount and duration of water vapor in the form of pulses.

[0065] In one embodiment, the gas flow rate of water vapor is 20-100 sccm; the duration can be in the range of 3-20 seconds.

[0066] In one embodiment, a single pulse of water vapor introduction constitutes a re-oxidation process.

[0067] Step 104: Stop glow discharge.

[0068] In one embodiment, glow discharge is stopped by shutting down a remote plasma source.

[0069] Step 105: Evacuate the residual gas in the reaction system.

[0070] In one embodiment, the evacuation time is greater than 5 seconds.

[0071] In one embodiment, the chamber pressure is controlled to be less than 500 mtorr.

[0072] Step 106: Perform the reduction process.

[0073] In one embodiment, the reduction process refers to the reduction process of natural oxides and metal oxides on the surface of a substrate, including the reduction reaction of the natural oxides and metal oxides using hydrogen-active groups.

[0074] In one embodiment, after the reduction process continues for a preset time period, steps 102-106 are repeated to perform the next repair (i.e., re-oxidation) and reduction process, and so on, until the number of particles in the reaction system reaches the preset target.

[0075] The re-oxidation process and reduction process of the present invention are carried out alternately and cyclically, and the amount of water vapor introduced during re-oxidation can be precisely controlled, which can effectively suppress over-oxidation.

[0076] Figure 2 The results of pulsed injection glow discharge re-oxidation according to an embodiment of the present invention are shown.

[0077] like Figure 2 As shown, the particle count before re-oxidation was 840 ea. After 53 cycles of re-oxidation, the particle count was 7 ea.

[0078] Figure 3 A graph showing the relationship between the number of re-oxidation cycles and the number of particles according to an embodiment of the present invention is shown.

[0079] After 20 re-oxidation cycles, the particle count met the requirements, and after 188 cycles, the particle problem remained good, indicating that the re-oxidation method effectively restores the oxide film and suppresses particulate contamination.

[0080] This invention provides a method for re-repairing oxide thin films, including but not limited to the following steps:

[0081] An initiating gas is introduced into the reaction system to induce glow discharge and form an initial plasma environment.

[0082] In the initial plasma environment, water vapor is pulsedly introduced, and the water vapor is excited into plasma and re-repairs the surface of the oxide film in the reaction system;

[0083] Stop the glow discharge and evacuate the residual gas in the reaction system;

[0084] A reduction process is performed on the natural oxides and metal oxides on the substrate surface.

[0085] Repeat all the aforementioned steps until the number of particles in the reaction system reaches the preset target.

[0086] In one embodiment, the substrate is transferred to the reaction system before the ignition gas is introduced for glow discharge.

[0087] In one embodiment, the water vapor being excited into plasma and re-repairing the surface of the oxide film within the reaction system includes:

[0088] The water vapor is ionized and excited by utilizing the high-energy discharge characteristics of the initial plasma environment, decomposing into oxygen ions, oxygen atoms, and hydroxyl radicals, which have strong oxidizing properties.

[0089] The surface of the oxide film is then re-oxidized;

[0090] A protective layer is formed on the surface of the oxide film.

[0091] In one embodiment, the process for reducing the natural oxides and metal oxides on the substrate surface includes using hydrogen-active groups to perform a reduction reaction on the natural oxides and metal oxides.

[0092] In one embodiment, the reaction system includes a remote plasma source and a reaction chamber connected to the remote plasma source.

[0093] In one embodiment, introducing an initiating gas into the reaction system to perform glow discharge and form an initial plasma environment includes:

[0094] The remote plasma source is activated, and the ignition gas is used as a precursor gas to initiate ignition discharge.

[0095] The flow rate of the ignition gas is controlled within the range of 2000-5000 sccm;

[0096] Maintain the pressure within the reaction system to less than 500 mtorr;

[0097] The glow discharge time is maintained at more than 2 seconds.

[0098] In one embodiment, the pulsed introduction of water vapor includes:

[0099] The gas flow rate of the single-pulse steam injection is controlled within 20-100 sccm;

[0100] The duration of a single pulse of steam introduction should be maintained within the range of 3-20 seconds.

[0101] In one embodiment, stopping the glow discharge and evacuating the residual gas in the reaction system includes:

[0102] Shut down the remote plasma source;

[0103] The pressure within the reaction system is controlled to be less than 500 mtorr;

[0104] Keep the evacuation time greater than 5 seconds.

[0105] In one embodiment, the ignition gas comprises an inert gas.

[0106] In one embodiment, the ignition gas comprises argon and / or helium.

[0107] The present invention also provides a reaction system, comprising:

[0108] Remote plasma source;

[0109] The reaction chamber is connected to the remote plasma source;

[0110] The control system for controlling the remote plasma source and the reaction chamber includes a memory and a processor. The memory stores computer instructions that can be executed on the processor. When the processor executes the computer instructions, it performs the oxide film re-repair method as described above.

[0111] The method and reaction system for oxide film re-repair of the present invention have the following beneficial effects:

[0112] Firstly, the invention employs a precise water vapor pulse injection glow discharge technology. After the initial gas discharge stabilizes, a trace amount of water vapor is precisely injected via pulses to repair the oxide film inside the reaction system. This pulse injection technology not only achieves precise control over the amount of water vapor but also avoids the impact of residual water vapor on subsequent reduction steps, thereby improving the overall reliability and stability of the process.

[0113] Secondly, it effectively suppresses excessive oxidation. This invention, through pulsed injection of small amounts of water vapor, successfully repairs oxide films while preventing excessive oxidation on the surface of the processed sample (substrate). This not only protects the integrity of the oxide film but also improves the efficiency of subsequent reduction steps.

[0114] Those skilled in the art will understand that the various illustrative components, modules, blocks, units, circuits, systems, and steps described in conjunction with the embodiments disclosed herein can be implemented in hardware, software (including firmware, resident software, microcode, etc.), or a combination of both. To clearly illustrate this interchangeability between hardware and software, the various illustrative components, modules, blocks, units, circuits, systems, and steps described above are generalized in their functional form. Whether such functionality is implemented in hardware or software depends on the specific application and the design constraints imposed on the overall system. Those skilled in the art may implement the described functionality in different ways for each specific application, but such implementation decisions should not be construed as departing from the scope of the invention.

[0115] This application uses flowcharts to illustrate the operations or steps performed by a system according to embodiments of this application. It should be understood that the preceding or following operations or steps are not necessarily performed in exact order. Instead, various operations or steps can be processed in reverse order or simultaneously. Furthermore, other operations or steps may be added to these processes, or one or more operations or steps may be removed from these processes.

[0116] Unless expressly stated in the claims, the order of processing elements and sequences, the use of numbers and letters, or the use of other names described in this application are not intended to limit the order of the processes and methods of this application.

[0117] Furthermore, aspects of this application may be manifested as a computer product located on one or more computer-readable media, the product including computer-readable program code.

[0118] A computer-readable signal medium may contain a propagated data signal containing computer program encoding, for example, on baseband or as part of a carrier wave. This propagated signal may take various forms, including electromagnetic, optical, and so on, or suitable combinations thereof. A computer-readable signal medium can be any computer-readable medium other than a computer-readable storage medium, which can be connected to an instruction execution system, apparatus, or device to enable communication, propagation, or transmission of a program for use. The program encoding located on the computer-readable signal medium can be propagated through any suitable medium, including radio, cable, fiber optic cable, RF, or similar media, or any combination of the above media.

[0119] The computer program code required for the operation of each part of this application can be written in any one or more programming languages, including object-oriented programming languages ​​such as Java, Scala, Smalltalk, Eiffel, JADE, Emerald, C++, C#, VB.NET, Python, etc., conventional procedural programming languages ​​such as C, Visual Basic, Fortran 2003, Perl, COBOL 2002, PHP, ABAP, dynamic programming languages ​​such as Python, Ruby, and Groovy, or other programming languages. This program code can run entirely on the user's computer, or as a standalone software package on the user's computer, or partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the latter case, the remote computer can be connected to the user's computer through any network, such as a local area network (LAN) or wide area network (WAN), or connected to an external computer (e.g., via the Internet), or in a cloud computing environment, or used as a service such as Software as a Service (SaaS).

[0120] Those skilled in the art will understand that information, signals, and data can be represented using any of a variety of different techniques and arts. For example, the data, instructions, commands, information, signals, bits, symbols, and chips described throughout the above description can be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, light fields or optical particles, or any combination thereof.

[0121] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of both. The software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to the processor so that the processor can read and write information to / from the storage medium. In an alternative, the storage medium may be integrated into the processor. In an alternative, the processor and storage medium may reside as discrete components in the user terminal.

[0122] In one or more exemplary embodiments, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functionality may be stored or transmitted as one or more instructions or code on or through a computer-readable medium. A computer-readable medium includes both computer storage media and communication media, encompassing any medium that facilitates the transfer of a computer program from one location to another. A storage medium may be any available medium accessible to a computer. By way of example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disc storage, disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and is accessible to a computer. Any connection is also legitimately referred to as a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of a medium. As used in this article, disk and disc include compact discs (CDs), laser discs, optical discs, digital multi-purpose discs (DVDs), floppy disks, and Blu-ray discs. Disks typically reproduce data magnetically, while discs reproduce data optically using lasers. Combinations of these should also be included within the scope of computer-readable media.

[0123] The terminology and expressions used above are for descriptive purposes only, and the invention should not be limited to these terms and expressions. The use of these terms and expressions does not mean excluding any illustrative and descriptive equivalent features (or parts thereof), and it should be recognized that various modifications that may exist should also be included within the scope of the claims. Other modifications, variations, and substitutions may also exist. Accordingly, the claims should be considered to cover all such equivalents.

[0124] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments of the invention, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the present application requires more features than those mentioned in the claims.

[0125] Similarly, it should be noted that although the present invention has been described with reference to the specific embodiments described above, those skilled in the art should recognize that the above embodiments are only used to illustrate the present invention, and various equivalent changes or substitutions can be made without departing from the spirit of the present invention. Therefore, any changes or modifications to the above embodiments within the scope of the essential spirit of the present invention will fall within the scope of the claims of this application.

Claims

1. A method for re-repairing oxide thin films, characterized in that, include: An initiating gas is introduced into the reaction system to induce glow discharge and form an initial plasma environment. In the initial plasma environment, water vapor is pulsed in, and the water vapor is excited into plasma and re-repairs the surface of the oxide film on the reaction system components; Stop the glow discharge and evacuate the residual gas in the reaction system; A reduction process is performed on the natural oxides and metal oxides on the substrate surface. Repeat all the aforementioned steps until the number of particles in the reaction system reaches the preset target.

2. The method for re-repairing oxide thin films as described in claim 1, characterized in that, Before introducing the ignition gas for glow discharge, the substrate is transferred to the reaction system.

3. The method for re-repairing oxide thin films as described in claim 1, characterized in that, The water vapor is excited into plasma and the re-repair of the oxide film surface within the reaction system includes: The water vapor is ionized and excited by utilizing the high-energy discharge characteristics of the initial plasma environment, decomposing into oxygen ions, oxygen atoms, and hydroxyl radicals, which have strong oxidizing properties. The surface of the oxide film is then re-oxidized; A protective layer is formed on the surface of the oxide film.

4. The method for re-repairing oxide thin films as described in claim 1, characterized in that, The process for reducing the natural oxides and metal oxides on the substrate surface includes using hydrogen-active groups to carry out a reduction reaction on the natural oxides and metal oxides.

5. The method for re-repairing oxide thin films as described in claim 1, characterized in that, The reaction system includes a remote plasma source and a reaction chamber connected to the remote plasma source.

6. The method for re-repairing oxide thin films as described in claim 1, characterized in that, Introducing an initiating gas into the reaction system to initiate glow discharge and form the initial plasma environment includes: The remote plasma source is activated, and the ignition gas is used as a precursor gas to initiate ignition discharge. The flow rate of the ignition gas is controlled within the range of 2000-5000 sccm; Maintain the pressure within the reaction system at less than 500 mtorr; The glow discharge time is maintained at more than 2 seconds.

7. The method for re-repairing oxide thin films as described in claim 1, characterized in that, The pulsed steam introduction includes: The gas flow rate of water vapor introduced in a single pulse is controlled within 20-100 sccm; The duration of a single pulse of steam introduction should be maintained within the range of 3-20 seconds.

8. The method for re-repairing oxide thin films as described in claim 1, characterized in that, Stopping the glow discharge and evacuating the residual gas in the reaction system includes: Shut down the remote plasma source; The pressure within the reaction system is controlled to be less than 500 mtorr; Keep the evacuation time greater than 5 seconds.

9. The method for re-repairing oxide thin films as described in claim 1, characterized in that, The ignition gas includes an inert gas.

10. The method for re-repairing oxide thin films as described in claim 1, characterized in that, The ignition gas includes argon and / or helium.

11. A reaction system, characterized in that, include: Remote plasma source; The reaction chamber is connected to the remote plasma source; A control system for controlling the remote plasma source and the reaction chamber includes a memory and a processor, wherein the memory stores computer instructions that can be executed on the processor, and the processor executes the oxide thin film re-repair method as described in any one of claims 1 to 10 when executing the computer instructions.

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