A Current-Controlled Injection-Free Light-Emitting Device Structure

Abstract

This invention discloses a current-controlled, injection-free light-emitting device structure, relating to the field of optoelectronic displays. The light-emitting device structure includes: an electron-driving electrode layer, a first injection-free insulating dielectric layer, a light-emitting recombination layer, a second injection-free insulating dielectric layer, a hole-driving electrode layer, a current gate transport layer, and a current gate electrode layer. A DC bias signal is applied between the current gate electrode layer and the electron-driving electrode layer and / or the hole-driving electrode layer. The DC bias signal is used to regulate the response speed or response amount of the separation and recombination of electrons and holes in the light-emitting recombination layer driven by an AC signal during the first half-cycle and / or the second half-cycle, so that the response speed or response amount of the separation and recombination of electrons and holes in the light-emitting recombination layer tends to be balanced. This invention can effectively improve the electron-hole light-emitting recombination efficiency of injection-free light-emitting devices.

Description

Technical Field

[0001] This invention relates to the field of optoelectronic displays, and in particular to a current-controlled, injection-free light-emitting device structure. Background Technology

[0002] Injection-free light-emitting devices (LEDs) place the light-emitting layer between insulating layers. Electrons and holes are intermittently separated from the light-emitting layer through an electric field effect, and then recombine to emit light. Externally driven charge carriers are not directly injected into the light-emitting layer. In existing technologies, due to the material selection of the light-emitting layer, the degree of electron-hole separation varies during the separation process, including the distance they travel apart and the amount of separation at the same distance. Similarly, during electron-hole recombination, their mobilities differ under external driving. Therefore, during recombination, the difference in migration efficiency between the two affects the recombination reflection efficiency.

[0003] Therefore, how to effectively improve the separation and recombination process of charge carriers and balance the mobility of electrons and holes without significantly increasing costs, thereby improving the luminous efficiency of injection-free light-emitting devices, is an important issue that urgently needs to be addressed in the current display technology field. Summary of the Invention

[0004] In view of the shortcomings of the prior art, the technical problem to be solved by the present invention is to provide a current-controlled injection-free light-emitting device structure, which aims to improve the composite light-emitting efficiency of the injection-free light-emitting device through current gate control.

[0005] To achieve the above objectives, the present invention provides a current-controlled injection-free light-emitting device structure, the light-emitting device structure comprising:

[0006] A non-injection device composite unit and a current gate control unit; the current gate control unit is disposed on at least one side of the non-injection device composite unit; the non-injection device composite unit includes: an electron driving electrode layer, a first non-injection insulating dielectric layer, a light-emitting composite layer, a second non-injection insulating dielectric layer, and a hole driving electrode layer; the current gate control unit is disposed on the electron driving electrode layer side and / or the hole driving electrode layer side;

[0007] An AC signal is applied to the hole-driven electrode layer and the electron-driven electrode layer. The AC signal is used to drive the light-emitting composite layer to a storage state in the first half-cycle to separate electrons and holes, and to drive the light-emitting composite layer to a recombination state in the second half-cycle to recombine electrons and holes and emit light. The response speed or response amount of the separation and recombination of electrons and holes in the light-emitting composite layer driven by the AC signal is different.

[0008] The current gate control unit includes a current gate transport layer and a current gate electrode layer. A DC bias signal is applied between the current gate electrode layer and the corresponding electron driving electrode layer and / or hole driving electrode layer adjacent to the current gate transport layer. The DC bias signal is used to control the response speed or response amount of the separation and recombination of electrons and holes in the light-emitting recombination layer driven by the AC signal in the first half-cycle and / or the second half-cycle, so that the response speed or response amount of the separation and recombination of electrons and holes in the light-emitting recombination layer tends to be balanced.

[0009] In one specific embodiment, during the first half-cycle, the electron-driven electrode layer is given a positive phase potential relative to the hole-driven electrode layer, and electrons in the light-emitting composite layer migrate to the adjacent first un-injected insulating dielectric layer, while holes in the light-emitting composite layer migrate to the adjacent second un-injected insulating dielectric layer, thus completing electron and hole energy storage; during the second half-cycle, the hole-driven electrode layer is given a positive phase potential relative to the electron-driven electrode layer, and electrons and holes in the light-emitting composite layer recombine in a controlled manner to emit light.

[0010] This technical solution is based on a carrier-free light-emitting device and sets a current-controlled gate structure at one or both ends of the light-emitting device. By biasing and controlling the electric field at both ends of the light-emitting device through current injection, the mobility of electron-hole separation and recombination in the light-emitting recombination layer under the original device driving conditions can be controlled, thereby realizing the control of the light-emitting efficiency of the light-emitting device. This solves the problem of light-emitting efficiency being affected by the mismatch of carrier injection on one side caused by the imbalance of electron-hole recombination mobility in the light-emitting functional layer. Based on the light-emitting device structure of this invention, the light-emitting efficiency can be effectively improved and energy can be saved.

[0011] Due to the characteristics of the luminescent layer material, when electrons and holes are subjected to an electric field, carriers with poor controlled mobility cannot be effectively pulled to both sides of the luminescent recombination layer during the separation and energy storage stage, resulting in an imbalance. Similarly, during the recombination stage, they cannot be effectively pushed to the recombination region for recombination, leading to low recombination efficiency. By adding a current gate structure, carriers with poor mobility can be pulled and pushed away, thereby improving the overall luminescent efficiency.

[0012] In one specific embodiment, within the light-emitting composite layer, the response speed or response amount of the hole is greater than that of the electron, and the current gate control unit is disposed on one side of the hole driving electrode layer; then the DC bias signal is configured as follows:

[0013] During the first half-cycle, the current gate electrode layer applies a positive phase potential relative to the hole driving electrode layer to reduce the hole separation response in the light-emitting recombination layer and improve the light-emitting recombination efficiency.

[0014] And / or in the second half-cycle, the current gate electrode layer applies a negative phase potential relative to the hole driving electrode layer to reduce the hole recombination response in the light-emitting recombination layer, thereby improving the light-emitting recombination efficiency.

[0015] In one specific embodiment, within the light-emitting composite layer, the response speed or response amount of the hole is less than that of the electron, and the current gate control unit is disposed on one side of the hole driving electrode layer; then the DC bias signal is configured as follows:

[0016] During the first half-cycle, the current gate electrode layer applies a negative phase potential relative to the hole driving electrode layer to increase the hole separation response in the light-emitting recombination layer, thereby improving the light-emitting recombination efficiency.

[0017] And / or during the second half-cycle, the current gate electrode layer applies a positive phase potential relative to the hole driving electrode layer to increase the hole recombination response in the light-emitting recombination layer, thereby improving the light-emitting recombination efficiency.

[0018] In one specific embodiment, within the light-emitting composite layer, the response speed or response amount of the hole is greater than that of the electron, and the current gate control unit is disposed on one side of the electron driving electrode layer; then the DC bias signal is configured as follows:

[0019] During the first half-cycle, the current gate electrode layer is given a positive phase potential relative to the electron drive electrode layer to increase the electron separation response in the light-emitting recombination layer and improve the light-emitting recombination efficiency.

[0020] And / or in the second half-cycle, the current gate electrode layer is given a negative phase potential relative to the electron drive electrode layer to increase the electron recombination response in the luminescent recombination layer and improve the luminescent recombination efficiency.

[0021] In one specific embodiment, within the light-emitting composite layer, the response speed or response amount of the hole is less than that of the electron, and the current gate control unit is disposed on one side of the electron driving electrode layer; then the DC bias signal is configured as follows:

[0022] During the first half-cycle, the current gate electrode layer applies a negative phase potential relative to the electron drive electrode layer to reduce the electron separation response in the light-emitting recombination layer and improve the light-emitting recombination efficiency.

[0023] And / or in the second half-cycle, the current gate electrode layer is applied with a positive phase potential relative to the electron drive electrode layer to reduce the electron recombination response in the luminescent recombination layer and improve the luminescent recombination efficiency.

[0024] In one specific embodiment, a current-limiting resistor is also provided in the loop of the DC bias signal.

[0025] In this technical solution, the current-limiting resistor is used to control the transmission layer current of the current-regulating gate to prevent excessive inter-electrode current from burning out the device.

[0026] In one specific embodiment, the current gate control unit includes a first current gate control unit disposed on one side of the electron driving electrode layer of the non-injection device composite unit and a second current gate control unit disposed on one side of the hole driving electrode layer of the non-injection device composite unit; the first current gate control unit includes a first current gate transport layer and a first current gate electrode layer adjacent to the electron driving electrode layer; the second current gate control unit includes a second current gate transport layer and a second current gate electrode layer adjacent to the hole driving electrode layer.

[0027] In one specific embodiment, the light-emitting composite layer is an LED, OLED, or QLED.

[0028] In one specific embodiment, the AC signal includes: a sine wave signal, a square wave signal, and a triangular wave signal.

[0029] The beneficial effects of this invention are as follows: 1) This invention is based on a carrier-free light-emitting device and sets a current-controlled gate structure at one or both ends of the light-emitting device. By biasing and controlling the electric field at both ends of the light-emitting device through current injection, the mobility of electron-hole separation and recombination within the light-emitting recombination layer under the original device driving conditions can be controlled, thereby achieving the control of the light-emitting efficiency of the light-emitting device. This solves the problem of light-emitting efficiency being affected by the mismatch of carrier injection on one side caused by the imbalance of electron-hole recombination mobility within the light-emitting functional layer. Based on the light-emitting device structure of this invention, the light-emitting efficiency can be effectively improved and energy can be saved. 2) Due to the characteristics of the light-emitting layer material, when electrons and holes are subjected to an electric field, carriers with poor controlled mobility cannot be effectively pulled to both sides of the light-emitting recombination layer during the separation and energy storage stage, resulting in an imbalance. Similarly, during the recombination stage, they cannot be effectively pushed to the recombination region for recombination, resulting in low recombination efficiency. By adding a current gate structure, carriers with poor mobility can be pulled and pushed away, thereby improving the overall light-emitting efficiency. 3) In this invention, during the first half-cycle and the second half-cycle of the driving process, corresponding signals can be set for the bias signal respectively, thereby optimizing the carriers with poor mobility throughout the entire cycle, so as to achieve the ability to pull them during separation and push them away during recombination, thereby improving the luminescence efficiency. Attached Figure Description

[0030] Figure 1 This is a schematic diagram of a current-controlled parallel gate light-emitting device structure according to a specific embodiment of the present invention.

[0031] Figure 2 This is a schematic diagram of the electron-hole movement within the light-emitting composite layer of the current-controlled parallel gate light-emitting device structure under the first half-cycle energy storage state in scenario 1 of the present invention.

[0032] Figure 3 This is a schematic diagram of the electron-hole movement within the light-emitting composite layer of the current-controlled parallel gate light-emitting device structure under the second half-cycle recombination state in scenario 1 of the present invention.

[0033] Figure 4 This is a schematic diagram of the electron-hole movement within the light-emitting composite layer of the current-controlled parallel gate light-emitting device structure under scenario 2 of the present invention in the first half-cycle energy storage state.

[0034] Figure 5 This is a schematic diagram of the electron-hole movement within the light-emitting composite layer of the current-controlled parallel gate light-emitting device structure under the second half-cycle recombination state in scenario 2 of the present invention.

[0035] Figure 6 This is a schematic diagram of the electron-hole movement within the light-emitting composite layer of the current-controlled parallel gate light-emitting device structure under scenario 3 of the present invention in the first half-cycle energy storage state.

[0036] Figure 7 This is a schematic diagram of the electron-hole movement within the light-emitting composite layer of the current-controlled parallel gate light-emitting device structure under the second half-cycle recombination state in scenario 3 of the present invention.

[0037] Figure 8 This is a schematic diagram of the electron-hole movement within the light-emitting composite layer of the current-controlled parallel gate light-emitting device structure under scenario 4 of the present invention in the first half-cycle energy storage state.

[0038] Figure 9 This is a schematic diagram of the electron-hole movement within the luminescent recombination layer of the current-controlled parallel gate light-emitting device structure under scenario 4 of the present invention in the second half-cycle recombination state.

[0039] Figure 10 This is a schematic diagram of a parallel gate light-emitting device structure with dual current gate control in one embodiment of the present invention. Detailed Implementation

[0040] The following describes in detail embodiments of the present invention, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0041] In the description of this patent, it should be understood that the terms “center,” “upper,” “lower,” “front,” “back,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” and “outer,” etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this patent and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this patent.

[0042] In the description of this patent, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "setting" should be interpreted broadly. For example, they can refer to a fixed connection or setting, a detachable connection or setting, or an integral connection or setting. Those skilled in the art can understand the specific meaning of the above terms in this patent according to the specific circumstances.

[0043] This invention provides a current-modulated parallel gate light-emitting device structure, such as... Figures 1-10 As shown, the structure of the light-emitting device includes:

[0044] The device composite unit 100 is free from injection, and the current gate control unit 200 is disposed on at least one side of the device composite unit 100. The device composite unit includes: an electron driving electrode layer 101, a first free-injection insulating dielectric layer 102, a light-emitting composite layer 103, a second free-injection insulating dielectric layer 104, and a hole driving electrode layer 105. The current gate control unit 200 is disposed on the side of the electron driving electrode layer and / or the side of the hole driving electrode layer 105.

[0045] An AC signal 301 is applied to the hole-driven electrode layer 105 and the electron-driven electrode layer 101. The AC signal 301 is used to drive the light-emitting composite layer 103 into an energy storage state to separate electrons and holes in the first half-cycle, and to drive the light-emitting composite layer 103 into a recombination state to recombine electrons and holes to emit light in the second half-cycle. The response speed or response amount of the separation and recombination of electrons and holes in the light-emitting composite layer 103 driven by the AC signal 301 is different.

[0046] The current gate control unit 200 includes a current gate transport layer 201 and a current gate electrode layer 202. A DC bias signal 302 is applied between the current gate electrode layer 202 and the corresponding electron driving electrode layer 101 and / or hole driving electrode layer 105 adjacent to the current gate transport layer 201. The DC bias signal 302 is used to control the response speed or response amount of the separation and recombination of electrons and holes in the light-emitting recombination layer 103 driven by the AC signal 301 in the first half-cycle and / or the second half-cycle, so that the response speed or response amount of the separation and recombination of electrons and holes in the light-emitting recombination layer 103 tends to be balanced.

[0047] In this embodiment, during the first half-cycle, the electron-driven electrode layer 101 applies a positive phase potential to the hole-driven electrode layer 105, and electrons in the light-emitting composite layer 103 migrate to the adjacent first un-injected insulating dielectric layer 102, while holes in the light-emitting composite layer 103 migrate to the adjacent second un-injected insulating dielectric layer 104, thus completing electron and hole energy storage. During the second half-cycle, the hole-driven electrode layer 105 applies a positive phase potential to the electron-driven electrode layer 101, and electrons and holes in the light-emitting composite layer 103 recombine in a controlled manner to emit light.

[0048] In this embodiment, in terms of the type of charge carriers being regulated, the current gate regulation unit 200 can be disposed on the electron-driven electrode layer 101 side or on the hole-driven electrode layer 105, and correspondingly, the regulated charge carriers will be different. In terms of the magnitude of the regulated charge carrier mobility, the current gate regulation unit 200 can be disposed on the side with a faster migration response or on the side with a slower migration response. Based on the above two dimensions, the following four scenarios are derived in this embodiment.

[0049] Scene 1

[0050] like Figure 2 , Figure 3 As shown, within the light-emitting composite layer 103, the response speed or response amount of the hole is greater than that of the electron, and the current gate control unit 200 is disposed on one side of the hole driving electrode layer 105, then the DC bias signal 302 is configured as follows:

[0051] During the first half-cycle, the current gate electrode layer 202 applies a positive phase potential to the hole driving electrode layer 105 to reduce the hole separation response in the light-emitting recombination layer 103, thereby improving the light-emitting recombination efficiency.

[0052] And / or in the second half-cycle, the current gate electrode layer 202 applies a negative phase potential relative to the hole driving electrode layer 105 to reduce the hole recombination response in the light-emitting recombination layer 103, thereby improving the light-emitting recombination efficiency.

[0053] It is worth mentioning that, in various scenarios, current gate regulation can be applied only to the first half-cycle or the second half-cycle, or both can be regulated simultaneously. Preferably, regulating both simultaneously can reduce the regulation drive voltage.

[0054] Scene 2

[0055] like Figure 4 , Figure 5 As shown, within the light-emitting composite layer 103, the response speed or response amount of the hole is less than that of the electron, and the current gate control unit 200 is disposed on one side of the hole driving electrode layer 105, then the DC bias signal 302 is configured as follows:

[0056] During the first half-cycle, the current gate electrode layer 202 applies a negative phase potential to the hole driving electrode layer 105 to increase the hole separation response in the light-emitting recombination layer 103, thereby improving the light-emitting recombination efficiency.

[0057] And / or in the second half-cycle, the current gate electrode layer 202 applies a positive phase potential relative to the hole driving electrode layer 105 to increase the hole recombination response in the light-emitting recombination layer 103, thereby improving the light-emitting recombination efficiency.

[0058] Scene 3

[0059] like Figure 6 , Figure 7 As shown, within the light-emitting composite layer 103, the response speed or response amount of the hole is greater than that of the electron, and the current gate control unit 200 is disposed on one side of the electron driving electrode layer 101, then the DC bias signal 302 is configured as follows:

[0060] During the first half-cycle, the current gate electrode layer 202 applies a positive phase potential to the electron driving electrode layer 101 to increase the electron separation response in the light-emitting recombination layer 103 and improve the light-emitting recombination efficiency.

[0061] And / or in the second half-cycle, the current gate electrode layer 202 applies a negative phase potential relative to the electron drive electrode layer 101 to increase the electron recombination response in the light-emitting recombination layer 103, thereby improving the light-emitting recombination efficiency.

[0062] Scene 4

[0063] like Figure 8 , Figure 9As shown, within the light-emitting composite layer 103, the response speed or response amount of the hole is less than that of the electron, and the current gate control unit 200 is disposed on one side of the electron driving electrode layer 101, then the DC bias signal 302 is configured as follows:

[0064] During the first half-cycle, the current gate electrode layer 202 applies a negative phase potential to the electron drive electrode layer 101 to reduce the electron separation response in the light-emitting recombination layer 103 and improve the light-emitting recombination efficiency.

[0065] And / or in the second half-cycle, the current gate electrode layer 202 applies a positive phase potential relative to the electron drive electrode layer 101 to reduce the electron recombination response in the light-emitting recombination layer 103, thereby improving the light-emitting recombination efficiency.

[0066] In this embodiment, a current-limiting resistor is also provided in the circuit of the DC bias signal 302.

[0067] In this embodiment, current gates can be set on both sides of the light-emitting device without an injector for regulation.

[0068] like Figure 10 As shown, typically, the current gate control unit 200 includes a first current gate control unit 400 disposed on one side of the electron driving electrode layer 101 of the non-injection device composite unit 100 and a second current gate control unit 500 disposed on one side of the hole driving electrode layer 105 of the non-injection device composite unit 100; the first current gate control unit 400 includes a first current gate transport layer 401 and a first current gate electrode layer 402 adjacent to the electron driving electrode layer 101; the second current gate control unit 500 includes a second current gate transport layer 501 and a second current gate electrode layer 502 adjacent to the hole driving electrode layer 105.

[0069] In this embodiment, the light-emitting composite layer 103 includes, but is not limited to, LED, OLED or QLED.

[0070] In this embodiment, the AC signal 301 includes, but is not limited to, sine wave signal, square wave signal, and triangular wave signal.

[0071] The above describes in detail the preferred embodiments of the present invention. It should be understood that those skilled in the art can make numerous modifications and variations based on the concepts of the present invention without inventive effort. Therefore, any technical solutions that can be derived by those skilled in the art through logical analysis, reasoning, or limited experimentation based on the concepts of the present invention and the prior art should be within the scope of protection defined by the claims.

Claims

1. A current-controlled, injection-free light-emitting device structure, characterized in that, The structure of the light-emitting device includes: A non-injection device composite unit and a current gate control unit; the current gate control unit is disposed on at least one side of the non-injection device composite unit; the non-injection device composite unit includes: an electron driving electrode layer, a first non-injection insulating dielectric layer, a light-emitting composite layer, a second non-injection insulating dielectric layer, and a hole driving electrode layer; the current gate control unit is disposed on the electron driving electrode layer side and / or the hole driving electrode layer side; An AC signal is applied to the hole-driven electrode layer and the electron-driven electrode layer. The AC signal is used to drive the light-emitting composite layer to a storage state in the first half-cycle to separate electrons and holes, and to drive the light-emitting composite layer to a recombination state in the second half-cycle to recombine electrons and holes and emit light. The response speed or response amount of the separation and recombination of electrons and holes in the light-emitting composite layer driven by the AC signal is different. The current gate control unit includes a current gate transport layer and a current gate electrode layer. A DC bias signal is applied between the current gate electrode layer and the corresponding electron driving electrode layer and / or hole driving electrode layer adjacent to the current gate transport layer. The DC bias signal is used to control the response speed or response amount of the separation and recombination of electrons and holes in the light-emitting recombination layer driven by the AC signal in the first half-cycle and / or the second half-cycle, so that the response speed or response amount of the separation and recombination of electrons and holes in the light-emitting recombination layer tends to be balanced.

2. The current-controlled injection-free light-emitting device structure as described in claim 1, characterized in that, During the first half-cycle, the electron-driven electrode layer is given a positive phase potential relative to the hole-driven electrode layer. Electrons in the light-emitting composite layer migrate to the adjacent first un-injected insulating dielectric layer, and holes in the light-emitting composite layer migrate to the adjacent second un-injected insulating dielectric layer, thus completing the storage of electrons and holes. During the second half-cycle, the hole-driven electrode layer is given a positive phase potential relative to the electron-driven electrode layer, and electrons and holes in the light-emitting recombination layer recombine in a controlled manner to emit light.

3. The current-controlled injection-free light-emitting device structure as described in claim 1, characterized in that, Within the light-emitting composite layer, if the response speed or response amount of the hole is greater than that of the electron, and the current gate control unit is disposed on one side of the hole driving electrode layer, then the DC bias signal is configured as follows: During the first half-cycle, the current gate electrode layer applies a positive phase potential relative to the hole driving electrode layer to reduce the hole separation response in the light-emitting recombination layer and improve the light-emitting recombination efficiency. And / or in the second half-cycle, the current gate electrode layer applies a negative phase potential relative to the hole driving electrode layer to reduce the hole recombination response in the light-emitting recombination layer, thereby improving the light-emitting recombination efficiency.

4. The injection-free light-emitting device structure based on current regulation as described in claim 1, characterized in that, Within the light-emitting composite layer, if the response rate or response amount of the hole is less than that of the electron, and the current gate control unit is disposed on one side of the hole driving electrode layer, then the DC bias signal is configured as follows: During the first half-cycle, the current gate electrode layer applies a negative phase potential relative to the hole driving electrode layer to increase the hole separation response in the light-emitting recombination layer, thereby improving the light-emitting recombination efficiency. And / or during the second half-cycle, the current gate electrode layer is applied with a positive phase potential relative to the hole driving electrode layer to increase the hole recombination response in the light-emitting recombination layer and improve the light-emitting recombination efficiency.

5. The current-controlled injection-free light-emitting device structure as described in claim 1, characterized in that, Within the light-emitting composite layer, if the response speed or response amount of the hole is greater than that of the electron, and the current gate control unit is disposed on one side of the electron driving electrode layer, then the DC bias signal is configured as follows: During the first half-cycle, the current gate electrode layer is given a positive phase potential relative to the electron drive electrode layer to increase the electron separation response in the light-emitting recombination layer and improve the light-emitting recombination efficiency. And / or in the second half-cycle, the current gate electrode layer is given a negative phase potential relative to the electron drive electrode layer to increase the electron recombination response in the luminescent recombination layer and improve the luminescent recombination efficiency.

6. The current-controlled injection-free light-emitting device structure as described in claim 1, characterized in that, Within the light-emitting composite layer, if the response speed or response amount of the hole is less than that of the electron, and the current gate control unit is disposed on one side of the electron driving electrode layer, then the DC bias signal is configured as follows: During the first half-cycle, the current gate electrode layer applies a negative phase potential relative to the electron drive electrode layer to reduce the electron separation response in the light-emitting recombination layer and improve the light-emitting recombination efficiency. And / or in the second half-cycle, the current gate electrode layer is applied with a positive phase potential relative to the electron drive electrode layer to reduce the electron recombination response in the luminescent recombination layer and improve the luminescent recombination efficiency.

7. The current-controlled injection-free light-emitting device structure as described in claim 1, characterized in that, A current-limiting resistor is also provided in the circuit of the DC bias signal.

8. The current-controlled injection-free light-emitting device structure as described in claim 1, characterized in that, The current gate control unit includes a first current gate control unit disposed on one side of the electron driving electrode layer of the non-injection device composite unit and a second current gate control unit disposed on one side of the hole driving electrode layer of the non-injection device composite unit. The first current gate control unit includes a first current gate transport layer and a first current gate electrode layer adjacent to the electron driving electrode layer; the second current gate control unit includes a second current gate transport layer and a second current gate electrode layer adjacent to the hole driving electrode layer.

9. The current-controlled injection-free light-emitting device structure as described in claim 1, characterized in that, The light-emitting composite layer is an LED, OLED, or QLED.

10. The current-controlled injection-free light-emitting device structure as described in claim 1, characterized in that, The AC signals include: sine wave signals, square wave signals, and triangular wave signals.

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