Display device
By optimizing the transistor structure and setting up capacitors, the leakage current problem in the transistor structure in the display device is solved, and the stability of the voltage in the pixel and the display effect are improved.
CN119730611APending Publication Date: 2025-03-28SAMSUNG DISPLAY CO LTD
0 Cites 0 Cited by
Patent Information
- Application Number
- CN202411325477.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-09-27
- Filing Date
- 2024-09-23
- Publication Date
- 2025-03-28
AI Technical Summary
Technical Problem
The existing display devices have leakage current problems in the transistor structure connected in series, which affects the stability of the voltage in the pixel.
Method used
By optimizing the structure of the third-first transistor and the third-second transistor, semiconductor regions and gate electrodes of different widths are provided to reduce leakage current, and the voltage in the pixel is stably maintained through the capacitor.
Benefits of technology
It effectively reduces leakage current flowing through the transistor, ensures the stability of the voltage in the pixel, and improves the display effect.
✦ Generated by Eureka AI based on patent content.
Abstract
A display device includes: a light emitting element disposed on a substrate; a first transistor for controlling a driving current flowing into the light emitting element; a second transistor for applying a data voltage to a source electrode of the first transistor; a third-first transistor connected to a gate electrode of the first transistor; and a third-second transistor connected between a source electrode of the third-first transistor and a drain electrode of the first transistor. One side of the semiconductor region of the third-second transistor disposed adjacent to the source electrode of the third-second transistor has a first width, and the other side of the semiconductor region of the third-second transistor disposed adjacent to the drain electrode of the third-second transistor has a second width smaller than the first width.
Need to check novelty before this filing date? Find Prior Art