A fabrication process for a dual-gate modulated injection-free light-emitting device

Abstract

This invention discloses a fabrication process for a dual-gate controlled injection-free light-emitting device, comprising: depositing a first conductive layer on a substrate and photolithographically forming a first carrier driving electrode, a first gate control electrode, and a second gate control electrode; depositing a first insulating layer on the first carrier driving electrode and photolithographically forming a first injection-free insulating dielectric layer; fabricating a light-emitting functional layer on the first injection-free insulating dielectric layer; depositing a second insulating layer on the light-emitting functional layer and photolithographically forming a second injection-free insulating dielectric layer; depositing a second conductive layer on the second injection-free insulating dielectric layer and photolithographically forming a second carrier driving electrode; fabricating a first transport layer on the first carrier driving electrode and the first gate control electrode, and fabricating a second transport layer on the second carrier driving electrode and the second gate control electrode. This invention effectively improves the luminous efficiency and luminous brightness of the injection-free light-emitting device and allows for flexible control of both.

Description

Technical Field

[0001] This invention relates to the field of optoelectronic displays, and in particular to a fabrication process for a dual-gate modulated injection-free light-emitting device. Background Technology

[0002] Injection-free light-emitting devices (LEDs) place the light-emitting layer between insulating layers. Electrons and holes are intermittently separated from the light-emitting layer through an electric field effect, and then recombine to emit light. Externally driven charge carriers are not directly injected into the light-emitting layer. In existing technologies, due to the material selection of the light-emitting layer, the degree of electron-hole separation varies during the separation process, including the distance they travel apart and the amount of separation at the same distance. Similarly, during electron-hole recombination, their mobilities differ under external driving. Therefore, during recombination, the difference in migration efficiency between the two affects the recombination reflection efficiency.

[0003] How to effectively improve the separation and recombination processes of charge carriers and balance the mobility of electrons and holes without significantly increasing costs, thereby enhancing the luminous efficiency of injection-free light-emitting devices, is a crucial issue that urgently needs to be addressed in the current display technology field. Therefore, gate modulation has emerged. Gate modulation can create a built-in electric field within these injection-free light-emitting devices, enabling the regulation of carrier mobility and thus luminous efficiency, which helps to improve luminous efficiency. Typical gate modulation is usually single-ended, but single-ended modulation is difficult to balance in adjusting luminous efficiency and brightness, thus lacking flexibility. Summary of the Invention

[0004] In view of the aforementioned deficiencies of the prior art, the technical problem to be solved by the present invention is to provide a fabrication process for a dual-gate modulated injection-free light-emitting device, which aims to effectively improve the luminous efficiency and luminous brightness of the injection-free light-emitting device and to flexibly control both.

[0005] To achieve the above objectives, the present invention discloses a fabrication process for a dual-gate controlled injection-free light-emitting device, the process comprising:

[0006] Step S1: Deposit a first conductive layer on the substrate, and perform photolithography on the first conductive layer to form a first carrier driving electrode, a first gate control electrode, and a second gate control electrode.

[0007] Step S2: Deposit a first insulating layer on the first carrier driving electrode, and perform photolithography on the first insulating layer to form a first non-injection insulating dielectric layer;

[0008] Step S3: According to the type of light-emitting device, prepare a light-emitting functional layer on the first un-injected insulating dielectric layer;

[0009] Step S4: Deposit a second insulating layer on the light-emitting functional layer, and perform photolithography on the second insulating layer to form a second non-implanted insulating dielectric layer;

[0010] Step S5: Deposit a second conductive layer on the second non-injection insulating dielectric layer, perform photolithography on the second conductive layer, and form a second carrier driving electrode to cover the second non-injection insulating dielectric layer;

[0011] Step S6: Deposit a carrier recombination layer on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode, and the second gate control electrode; perform photolithography on the carrier recombination layer; form a first transport layer on the first carrier driving electrode and the first gate control electrode; and form a second transport layer on the second carrier driving electrode and the second gate control electrode. The first gate control electrode applies a first gate voltage relative to the first carrier driving electrode, and the first gate voltage forms a first control current between the first gate control electrode, the first transport layer, and the first carrier driving electrode. The first control current is used to control the carrier mobility on the first carrier driving electrode side, thereby adjusting the luminous efficiency and / or luminous brightness of the light-emitting device. The second gate control electrode applies a second gate voltage relative to the second carrier driving electrode, and the second gate voltage forms a second control current between the second gate control electrode, the second transport layer, and the second carrier driving electrode. The second control current is used to control the carrier mobility on the second carrier driving electrode side, thereby adjusting the luminous efficiency and / or luminous brightness of the light-emitting device.

[0012] Optionally, step S6 includes:

[0013] A hole material layer is deposited on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode, and the second gate control electrode. The hole material layer is photolithographically etched to form a first hole transport layer on the first carrier driving electrode and the first gate control electrode, and a second hole transport layer is formed on the second carrier driving electrode and the second gate control electrode.

[0014] An electronic material layer is deposited on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode, and the second gate control electrode. The electronic material layer is then photolithographically etched to form a first electron transport layer on the first carrier driving electrode and the first gate control electrode, and a second electron transport layer is formed on the second carrier driving electrode and the second gate control electrode. The carrier recombination layer comprises the hole material layer and the electronic material layer; the first transport layer comprises the first hole transport layer and the first electron transport layer; and the second transport layer comprises the second hole transport layer and the second electron transport layer.

[0015] Optionally, the first hole transport layer and the first electron transport layer in the first transport layer have a first preset ratio to the transport contact area of ​​the first carrier driving electrode and the first gate control electrode, so that the electron mobility and hole mobility in the first transport layer tend to be the same; the second hole transport layer and the second electron transport layer in the second transport layer have a second preset ratio to the transport contact area of ​​the second carrier driving electrode and the second gate control electrode, so that the electron mobility and hole mobility in the second transport layer tend to be the same.

[0016] Optionally, the light-emitting functional layer includes a quantum dot light-emitting layer or an organic light-emitting layer.

[0017] Optionally, the light-emitting functional layer is divided into an electron-type light-emitting functional layer and a hole-type light-emitting functional layer according to different carrier mobility. The electron-type light-emitting functional layer has a greater electron mobility than the hole mobility, and the hole-type light-emitting functional layer has a greater hole mobility than the electron mobility.

[0018] Optionally, when the light-emitting functional layer is the electronic light-emitting functional layer, the first carrier driving electrode is either an electron driving electrode or a hole driving electrode, and the second carrier driving electrode is either the electron driving electrode or the hole driving electrode; when the light-emitting functional layer is in the energy storage state, applying a negative voltage to the gate control electrode on the electron driving electrode side improves the luminous efficiency of the light-emitting device; when the light-emitting functional layer is in the recombination state, applying a positive voltage to the gate control electrode on the electron driving electrode side improves the luminous efficiency of the light-emitting device; when the light-emitting functional layer is in the energy storage state, applying a negative voltage to the gate control electrode on the hole driving electrode side improves both the luminous efficiency and luminous brightness of the light-emitting device; when the light-emitting functional layer is in the recombination state, applying a positive voltage to the gate control electrode on the hole driving electrode side improves both the luminous efficiency and luminous brightness of the light-emitting device.

[0019] Optionally, when the light-emitting functional layer is the hole-type light-emitting functional layer, the first carrier driving electrode is either an electron driving electrode or a hole driving electrode, and the second carrier driving electrode is either the electron driving electrode or the hole driving electrode. When the light-emitting functional layer is in the energy storage state, applying a positive voltage to the gate control electrode on the electron driving electrode side improves both the luminous efficiency and luminous brightness of the light-emitting device. When the light-emitting functional layer is in the recombination state, applying a negative voltage to the gate control electrode on the electron driving electrode side improves both the luminous efficiency and luminous brightness of the light-emitting device. When the light-emitting functional layer is in the energy storage state, applying a positive voltage to the gate control electrode on the hole driving electrode side improves the luminous efficiency of the light-emitting device. When the light-emitting functional layer is in the recombination state, applying a negative voltage to the gate control electrode on the hole driving electrode side improves the luminous efficiency of the light-emitting device.

[0020] Optionally, the light-emitting device controls the magnitude and direction of the gate voltage applied to the first gate control electrode and / or the second gate control electrode according to the requirements for adjusting luminous brightness and luminous efficiency.

[0021] Optionally, step S3 includes:

[0022] Depending on the type of light-emitting device, the light-emitting functional layer is formed by one or multiple film layer preparations.

[0023] The beneficial effects of this invention are as follows: 1. This invention, by fabricating a control electrode on a non-injection light-emitting device, achieves control over carrier mobility, thereby controlling luminous efficiency and brightness, which helps to improve luminous efficiency and change brightness. Compared with the time-consuming and labor-intensive material combination experiments required by existing technologies, this invention avoids the resource waste caused by these experimental combinations. 2. This invention fabricates gate control electrodes at both ends of the non-injection light-emitting device. The two gate control electrodes can work individually or simultaneously to achieve individual or joint control over luminous efficiency and brightness, increasing the flexibility of control. 3. This invention can fabricate the first carrier driving electrode, the first gate control electrode, and the second gate control electrode together, which can effectively reduce the fabrication steps, simplify the fabrication process, and improve fabrication efficiency. 4. The first transport layer of this invention includes a first hole transport layer and a first electron transport layer, and the second transport layer includes a second hole transport layer and a second electron transport layer. The first hole transport layer and the first electron transport layer within the first transport layer have their transport contact areas with the first carrier driving electrode and the first gate control electrode in a first predetermined ratio, so that the electron mobility and hole mobility within the first transport layer tend to be the same. Similarly, the second hole transport layer and the second electron transport layer within the second transport layer have their transport contact areas with the second carrier driving electrode and the second gate control electrode in a second predetermined ratio, so that the electron mobility and hole mobility within the second transport layer tend to be the same. This invention, through such a structure, achieves a balance between electron and hole mobility, preventing one carrier's mobility from being excessively high or low compared to another during gate control.

[0024] In summary, the present invention can effectively improve the luminous efficiency and luminous brightness of injection-free light-emitting devices, and can flexibly control both. Attached Figure Description

[0025] Figure 1 This is a schematic flowchart of a fabrication process for a dual-gate modulated injection-free light-emitting device according to a specific embodiment of the present invention;

[0026] Figure 2 This is a schematic diagram of the structure of a light-emitting device provided in a specific embodiment of the present invention;

[0027] Figure 3 This is a schematic diagram illustrating the changes in the light-emitting device during step S1 according to a specific embodiment of the present invention;

[0028] Figure 4 This is a schematic diagram illustrating the changes in the light-emitting device during step S2 according to a specific embodiment of the present invention;

[0029] Figure 5 This is a schematic diagram illustrating the changes in the light-emitting device during step S3 according to a specific embodiment of the present invention;

[0030] Figure 6 This is a schematic diagram illustrating the changes in the light-emitting device during step S4 according to a specific embodiment of the present invention;

[0031] Figure 7 This is a schematic diagram illustrating the changes in the light-emitting device during step S5 according to a specific embodiment of the present invention.

[0032] Figure 8 This is a schematic diagram illustrating the changes in the light-emitting device during step S6 according to a specific embodiment of the present invention;

[0033] Figure 9 This is a schematic diagram of the structure of a light-emitting device provided in another specific embodiment of the present invention;

[0034] Figure 10 This is a schematic diagram of the carrier flow direction during the light emission process of the light-emitting device provided in the first specific embodiment of the present invention. Detailed Implementation

[0035] This invention discloses a fabrication process for a dual-gate modulated injection-free light-emitting device. Those skilled in the art can refer to the content of this document and appropriately modify the technical details to achieve the desired result. It should be particularly noted that all similar substitutions and modifications are obvious to those skilled in the art and are considered to be included in this invention. The methods and applications of this invention have been described through preferred embodiments. Those skilled in the art can clearly modify or appropriately change and combine the methods and applications described herein without departing from the content, spirit, and scope of this invention to implement and apply the technology of this invention.

[0036] The applicant's research has revealed that effectively improving the separation and recombination processes of charge carriers and balancing the mobility of electrons and holes, thereby enhancing the luminous efficiency of injection-free light-emitting devices (LEDs), without significantly increasing costs, is a crucial issue that urgently needs to be addressed in the current display technology field. Therefore, gate modulation has emerged. Gate modulation allows the creation of a built-in electric field within these injection-free LEDs, enabling the regulation of carrier mobility and thus luminous efficiency, which helps improve luminous efficiency. Typical gate modulation is single-ended, but single-ended modulation is difficult to balance in adjusting both luminous efficiency and brightness, thus lacking flexibility.

[0037] Therefore, embodiments of the present invention provide a fabrication process for a dual-gate modulated injection-free light-emitting device, such as... Figure 1 As shown, the process includes:

[0038] Step S1: Deposit a first conductive layer on the substrate, and perform photolithography on the first conductive layer to form a first carrier driving electrode, a first gate control electrode, and a second gate control electrode.

[0039] In this specific embodiment, the molding structure of the light-emitting device can be as follows: Figure 2As shown. Figure 2 In the diagram, 201 is the substrate, 202 is the first carrier driving electrode, and the first carrier driving electrode 202 (inner left) and the first carrier driving electrode 20 (outer right) are connected through an outer structure, so they belong to the same electrode and are fabricated together. 203 is the first gate control electrode, 204 is the second gate control electrode, 205 is the first non-injection insulating dielectric layer, 206 is the light-emitting functional layer, 207 is the second non-injection insulating dielectric layer, 208 is the second carrier driving electrode, 209 is the first transport layer, and 210 is the second transport layer.

[0040] In this specific embodiment, the change in the light-emitting device corresponding to step S1 is as follows: Figure 3 As shown.

[0041] It should be noted that the first carrier driving electrode, the first gate control electrode, and the second gate control electrode can be made of the same material, so they can be fabricated at the same level, effectively reducing the steps of individual fabrication and improving the fabrication efficiency.

[0042] Step S2: Deposit a first insulating layer on the first carrier driving electrode, and perform photolithography on the first insulating layer to form a first non-injection insulating dielectric layer.

[0043] In this specific embodiment, the change in the light-emitting device corresponding to step S2 is as follows: Figure 4 As shown.

[0044] It should be noted that the insulating layer can be made of silicon dioxide.

[0045] Step S3: According to the type of light-emitting device, prepare a light-emitting functional layer on the first un-injected insulating dielectric layer.

[0046] In this specific embodiment, the change in the light-emitting device corresponding to step S3 is as follows: Figure 5 As shown.

[0047] It should be noted that different light-emitting devices have different numbers of light-emitting functional layers and different materials. For example, the light-emitting functional layers of QLED and OLED are different.

[0048] In this specific embodiment, the light-emitting functional layer includes a quantum dot light-emitting layer or an organic light-emitting layer.

[0049] The light-emitting functional layer of QLED includes a quantum dot light-emitting layer, and the light-emitting functional layer of OLED includes an organic light-emitting layer. In this specific embodiment, step S3 includes:

[0050] Depending on the type of light-emitting device, the process can be divided into single or multiple film layer preparations to form a light-emitting functional layer.

[0051] Step S4: Deposit a second insulating layer on the light-emitting functional layer, and perform photolithography on the second insulating layer to form a second non-implanted insulating dielectric layer.

[0052] In this specific embodiment, the change in the light-emitting device corresponding to step S4 is as follows: Figure 6 As shown.

[0053] It should be noted that the material of the second insulating layer can be the same as that of the first insulating layer.

[0054] Step S5: Deposit a second conductive layer on the second non-injection insulating dielectric layer, perform photolithography on the second conductive layer, and form a second carrier driving electrode to cover the second non-injection insulating dielectric layer.

[0055] In this specific embodiment, the change in the light-emitting device corresponding to step S5 is as follows: Figure 7 As shown.

[0056] Step S6: Deposit a carrier recombination layer on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode, and the second gate control electrode; perform photolithography on the carrier recombination layer; form a first transport layer on the first carrier driving electrode and the first gate control electrode; and form a second transport layer on the second carrier driving electrode and the second gate control electrode.

[0057] In this specific embodiment, the change in the light-emitting device corresponding to step S6 is as follows: Figure 8 As shown.

[0058] The first gate control electrode is used to apply a first gate voltage relative to the first carrier driving electrode. The first gate voltage forms a first control current between the first gate control electrode, the first transport layer, and the first carrier driving electrode. The first control current is used to control the carrier mobility on the first carrier driving electrode side, thereby adjusting the luminous efficiency and / or luminous brightness of the light-emitting device. The second gate control electrode is used to apply a second gate voltage relative to the second carrier driving electrode. The second gate voltage forms a second control current between the second gate control electrode, the second transport layer, and the second carrier driving electrode. The second control current is used to control the carrier mobility on the second carrier driving electrode side, thereby adjusting the luminous efficiency and / or luminous brightness of the light-emitting device.

[0059] It should be noted that the gate control in this embodiment of the invention adopts current-type gate control.

[0060] In this specific embodiment, step S6 includes:

[0061] A hole material layer is deposited on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode, and the second gate control electrode. The hole material layer is photolithographically etched to form a first hole transport layer on the first carrier driving electrode and the first gate control electrode, and a second hole transport layer is formed on the second carrier driving electrode and the second gate control electrode.

[0062] An electronic material layer is deposited on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode, and the second gate control electrode. The electronic material layer is then photolithographically etched to form a first electron transport layer on the first carrier driving electrode and the first gate control electrode, and a second electron transport layer is formed on the second carrier driving electrode and the second gate control electrode. The carrier recombination layer includes a hole material layer and an electron material layer, the first transport layer includes a first hole transport layer and a first electron transport layer, and the second transport layer includes a second hole transport layer and a second electron transport layer.

[0063] In this specific embodiment, the molding structure of the light-emitting device can be as follows: Figure 9 As shown. Figure 9 In the diagram, 201 is the substrate, 202 is the first carrier driving electrode, and the first carrier driving electrode 202 (inner left) and the first carrier driving electrode 20 (outer right) are connected through an outer structure, so they belong to the same electrode and are fabricated together. 203 is the first gate control electrode, 204 is the second gate control electrode, 205 is the first non-injection insulating dielectric layer, 206 is the light-emitting functional layer, 207 is the second non-injection insulating dielectric layer, 208 is the second carrier driving electrode, 211 is the first hole transport layer of the first transport layer, 212 is the second hole transport layer of the second transport layer, 213 is the first electron transport layer of the first transport layer, and 214 is the second electron transport layer of the second transport layer.

[0064] Furthermore, the first hole transport layer and the first electron transport layer in the first transport layer have a first preset ratio for their transport contact areas with the first carrier driving electrode and the first gate control electrode, so that the electron mobility and hole mobility in the first transport layer tend to be the same; the second hole transport layer and the second electron transport layer in the second transport layer have a second preset ratio for their transport contact areas with the second carrier driving electrode and the second gate control electrode, so that the electron mobility and hole mobility in the second transport layer tend to be the same.

[0065] It should be noted that when the mobility of the two types of charge carriers tends to be the same, it is easier to control them.

[0066] In this specific embodiment, the light-emitting functional layer is divided into an electron-type light-emitting functional layer and a hole-type light-emitting functional layer according to the different carrier mobility. The electron mobility of the electron-type light-emitting functional layer is greater than the hole mobility, and the hole mobility of the hole-type light-emitting functional layer is greater than the electron mobility.

[0067] In a first specific embodiment, when the light-emitting functional layer is an electron-type light-emitting functional layer, the first carrier driving electrode is either an electron driving electrode or a hole driving electrode, and the second carrier driving electrode is either an electron driving electrode or a hole driving electrode. When the light-emitting functional layer is in an energy storage state, applying a negative voltage to the gate control electrode on the electron driving electrode side improves the luminous efficiency of the light-emitting device. When the light-emitting functional layer is in a recombination state, applying a positive voltage to the gate control electrode on the electron driving electrode side improves the luminous efficiency of the light-emitting device. When the light-emitting functional layer is in an energy storage state, applying a negative voltage to the gate control electrode on the hole driving electrode side improves both the luminous efficiency and luminous brightness of the light-emitting device; when the light-emitting functional layer is in a recombination state, applying a positive voltage to the gate control electrode on the hole driving electrode side improves both the luminous efficiency and luminous brightness of the light-emitting device.

[0068] In this case, when the light-emitting functional layer is an electronic light-emitting functional layer, when the light-emitting functional layer is in an energy storage state, applying a negative voltage to the gate control electrode on the hole driving electrode side improves both the luminous efficiency and luminous brightness of the light-emitting device. This can be achieved as follows: Figure 10 As shown, in Figure 10 In the diagram, arrows represent the direction of charge carrier movement, and charge carriers are represented by circles with positive and negative signs. The symbols in the circles represent the types of charge carriers, and the number of circles represents the number of charge carriers. Figure 10 This is just an example.

[0069] In the second specific embodiment, when the light-emitting functional layer is a hole-type light-emitting functional layer, the first carrier driving electrode is either an electron driving electrode or a hole driving electrode, and the second carrier driving electrode is either an electron driving electrode or a hole driving electrode. When the light-emitting functional layer is in the energy storage state, applying a positive voltage to the gate control electrode on the electron driving electrode side improves both the luminous efficiency and luminous brightness of the light-emitting device. When the light-emitting functional layer is in the recombination state, applying a negative voltage to the gate control electrode on the electron driving electrode side improves both the luminous efficiency and luminous brightness of the light-emitting device. When the light-emitting functional layer is in the energy storage state, applying a positive voltage to the gate control electrode on the hole driving electrode side improves the luminous efficiency of the light-emitting device. When the light-emitting functional layer is in the recombination state, applying a negative voltage to the gate control electrode on the hole driving electrode side improves the luminous efficiency of the light-emitting device.

[0070] It should be noted that in different application scenarios, there may be a need for reduced luminous efficiency and reduced luminous brightness. Embodiments of the present invention can apply different gate voltages as needed to meet these requirements. Embodiments of the present invention can utilize the dual-ended gate control electrodes to work together, thereby satisfying most practical application requirements.

[0071] In this specific embodiment, the light-emitting device controls the magnitude and direction of the gate voltage applied to the first gate control electrode and / or the second gate control electrode according to the requirements for adjusting luminous brightness and luminous efficiency.

[0072] This invention, through the fabrication of a control electrode on a non-injection light-emitting device, enables the regulation of carrier mobility, thereby controlling luminous efficiency and brightness. This helps to improve luminous efficiency and modify brightness. Compared to existing technologies that require time-consuming and labor-intensive material combination experiments, this invention avoids the resource waste associated with such experiments.

[0073] In this embodiment of the invention, gate control electrodes are fabricated at both ends of the non-injected light-emitting device. The two gate control electrodes can work individually or simultaneously to achieve individual or joint control of luminous efficiency and luminous brightness, thereby increasing the flexibility of control.

[0074] In this embodiment of the invention, the first carrier driving electrode, the first gate control electrode, and the second gate control electrode can be fabricated together, which can effectively reduce the fabrication steps, simplify the fabrication process, and improve the fabrication efficiency.

[0075] The first transport layer of this invention includes a first hole transport layer and a first electron transport layer, and the second transport layer includes a second hole transport layer and a second electron transport layer. The first hole transport layer and the first electron transport layer within the first transport layer have a first preset ratio to the transport contact area of ​​the first carrier driving electrode and the first gate control electrode, so that the electron mobility and hole mobility within the first transport layer tend to be the same. Similarly, the second hole transport layer and the second electron transport layer within the second transport layer have a second preset ratio to the transport contact area of ​​the second carrier driving electrode and the second gate control electrode, so that the electron mobility and hole mobility within the second transport layer tend to be the same. This structure, through which the embodiments of this invention are fabricated, achieves a balance between electron and hole mobility, preventing one carrier's mobility from being excessively large or small compared to another carrier during gate control.

[0076] In summary, the embodiments of the present invention can effectively improve the luminous efficiency and luminous brightness of non-injection light-emitting devices, and can flexibly control both.

[0077] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes the element.

[0078] The various embodiments in this specification are described in a related manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the system embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions of the method embodiments.

[0079] The above are merely preferred embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention are included within the scope of protection of the present invention.

Claims

1. A fabrication process for a dual-gate modulated injection-free light-emitting device, characterized in that, The process includes: Step S1: Deposit a first conductive layer on the substrate, and perform photolithography on the first conductive layer to form a first carrier driving electrode, a first gate control electrode, and a second gate control electrode. Step S2: Deposit a first insulating layer on the first carrier driving electrode, and perform photolithography on the first insulating layer to form a first non-injection insulating dielectric layer; Step S3: According to the type of light-emitting device, prepare a light-emitting functional layer on the first un-injected insulating dielectric layer; Step S4: Deposit a second insulating layer on the light-emitting functional layer, and perform photolithography on the second insulating layer to form a second non-implanted insulating dielectric layer; Step S5: Deposit a second conductive layer on the second non-injection insulating dielectric layer, perform photolithography on the second conductive layer, and form a second carrier driving electrode to cover the second non-injection insulating dielectric layer; Step S6: Deposit a carrier recombination layer on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode, and the second gate control electrode; perform photolithography on the carrier recombination layer; form a first transport layer on the first carrier driving electrode and the first gate control electrode; and form a second transport layer on the second carrier driving electrode and the second gate control electrode. The first gate control electrode applies a first gate voltage relative to the first carrier driving electrode, and the first gate voltage forms a first control current between the first gate control electrode, the first transport layer, and the first carrier driving electrode. The first control current is used to control the carrier mobility on the first carrier driving electrode side, thereby adjusting the luminous efficiency and / or luminous brightness of the light-emitting device. The second gate control electrode applies a second gate voltage relative to the second carrier driving electrode, and the second gate voltage forms a second control current between the second gate control electrode, the second transport layer, and the second carrier driving electrode. The second control current is used to control the carrier mobility on the second carrier driving electrode side, thereby adjusting the luminous efficiency and / or luminous brightness of the light-emitting device.

2. The fabrication process of the dual-gate controlled injection-free light-emitting device according to claim 1, characterized in that, Step S6 includes: A hole material layer is deposited on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode, and the second gate control electrode. The hole material layer is photolithographically etched to form a first hole transport layer on the first carrier driving electrode and the first gate control electrode, and a second hole transport layer is formed on the second carrier driving electrode and the second gate control electrode. An electronic material layer is deposited on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode, and the second gate control electrode. The electronic material layer is then photolithographically etched to form a first electron transport layer on the first carrier driving electrode and the first gate control electrode, and a second electron transport layer is formed on the second carrier driving electrode and the second gate control electrode. The carrier recombination layer comprises the hole material layer and the electronic material layer; the first transport layer comprises the first hole transport layer and the first electron transport layer; and the second transport layer comprises the second hole transport layer and the second electron transport layer.

3. The fabrication process of the dual-gate modulated injection-free light-emitting device according to claim 2, characterized in that, The first hole transport layer and the first electron transport layer in the first transport layer have a first preset ratio to the transport contact area of ​​the first carrier driving electrode and the first gate control electrode, so that the electron mobility and hole mobility in the first transport layer tend to be the same; the second hole transport layer and the second electron transport layer in the second transport layer have a second preset ratio to the transport contact area of ​​the second carrier driving electrode and the second gate control electrode, so that the electron mobility and hole mobility in the second transport layer tend to be the same.

4. The fabrication process of the dual-gate controlled injection-free light-emitting device according to claim 1, characterized in that, The light-emitting functional layer includes a quantum dot light-emitting layer or an organic light-emitting layer.

5. The fabrication process of the dual-gate controlled injection-free light-emitting device according to claim 1, characterized in that, The light-emitting functional layer is divided into an electron-type light-emitting functional layer and a hole-type light-emitting functional layer according to the different carrier mobility. The electron mobility of the electron-type light-emitting functional layer is greater than the hole mobility, and the hole mobility of the hole-type light-emitting functional layer is greater than the electron mobility.

6. The fabrication process of the dual-gate controlled injection-free light-emitting device according to claim 5, characterized in that, When the light-emitting functional layer is the electronic light-emitting functional layer, the first carrier driving electrode is either an electron driving electrode or a hole driving electrode, and the second carrier driving electrode is either the electron driving electrode or the hole driving electrode. When the light-emitting functional layer is in the energy storage state, applying a negative voltage to the gate control electrode on the electron driving electrode side improves the luminous efficiency of the light-emitting device; when the light-emitting functional layer is in the recombination state, applying a positive voltage to the gate control electrode on the electron driving electrode side improves the luminous efficiency of the light-emitting device; when the light-emitting functional layer is in the energy storage state, applying a negative voltage to the gate control electrode on the hole driving electrode side improves both the luminous efficiency and the luminous brightness of the light-emitting device. When the light-emitting functional layer is in a recombination state, a positive voltage is applied to the gate control electrode on the hole driving electrode side, thereby improving both the luminous efficiency and luminous brightness of the light-emitting device.

7. The fabrication process of the dual-gate controlled injection-free light-emitting device according to claim 5, characterized in that, When the light-emitting functional layer is the hole-type light-emitting functional layer, the first carrier driving electrode is either an electron driving electrode or a hole driving electrode, and the second carrier driving electrode is either the electron driving electrode or the hole driving electrode. When the light-emitting functional layer is in the energy storage state, a positive voltage is applied to the gate control electrode on the electronic driving electrode side, thereby improving the luminous efficiency and luminous brightness of the light-emitting device. When the light-emitting functional layer is in a recombination state, applying a negative voltage to the gate control electrode on the electron driving electrode side improves the luminous efficiency and brightness of the light-emitting device. When the light-emitting functional layer is in an energy storage state, applying a positive voltage to the gate control electrode on the hole driving electrode side improves the luminous efficiency of the light-emitting device. When the light-emitting functional layer is in a recombination state, applying a negative voltage to the gate control electrode on the hole driving electrode side improves the luminous efficiency of the light-emitting device.

8. The fabrication process of the dual-gate controlled injection-free light-emitting device according to claim 1, characterized in that, The light-emitting device controls the magnitude and direction of the gate voltage applied to the first gate control electrode and / or the second gate control electrode according to the requirements for adjusting luminous brightness and luminous efficiency.

9. The fabrication process of the dual-gate controlled injection-free light-emitting device according to claim 1, characterized in that, Step S3 includes: Depending on the type of light-emitting device, the light-emitting functional layer is formed by one or multiple film layer preparations.

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