High-purity quartz sand for inner layer of photovoltaic crucible
CN119735369APending Publication Date: 2025-04-01BEIJING CRYSTAL PHOTOELECTRIC SCI & TECH INC
Patent Information
- Application Number
- CN202411964826.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-30
- Publication Date
- 2025-04-01
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Abstract
The invention relates to high-purity quartz sand for an inner layer of a photovoltaic crucible, which can take domestic quartz ore as a raw material, the total impurity content (including as many as 13 elements except for conventional Li, Na, K, Al, Fe and the like) of the quartz ore can be controlled to be 20ppm and below (the purity is 4N8 and above), the content of individual single element such as Li can break through the national standard range and reach 1-2ppm, and the performance of the crucible cannot be influenced; the crystal pulling time is maintained to be more than 450 hours; the content of Al element is 4-13.5 ppm, but the high-temperature viscosity performance is good due to the low hydroxyl content (less than or equal to 5 ppm); the crucible can be used for a photovoltaic-grade inner-layer crucible.
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Citation Information
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