High-purity quartz sand for inner layer of photovoltaic crucible

CN119735369APending Publication Date: 2025-04-01BEIJING CRYSTAL PHOTOELECTRIC SCI & TECH INC
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Patent Information

Application Number
CN202411964826.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-30
Publication Date
2025-04-01

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Abstract

The invention relates to high-purity quartz sand for an inner layer of a photovoltaic crucible, which can take domestic quartz ore as a raw material, the total impurity content (including as many as 13 elements except for conventional Li, Na, K, Al, Fe and the like) of the quartz ore can be controlled to be 20ppm and below (the purity is 4N8 and above), the content of individual single element such as Li can break through the national standard range and reach 1-2ppm, and the performance of the crucible cannot be influenced; the crystal pulling time is maintained to be more than 450 hours; the content of Al element is 4-13.5 ppm, but the high-temperature viscosity performance is good due to the low hydroxyl content (less than or equal to 5 ppm); the crucible can be used for a photovoltaic-grade inner-layer crucible.
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Citation Information

Cited By

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