Semiconductor device and method of manufacturing the same

By using inclination angle photoresist etching and growing epitaxial layer on the silicon carbide substrate, the on-resistance and power loss problems caused by electron mobility anisotropy in the silicon carbide power element are solved, and a transistor structure with high electron mobility and low power loss is realized.

CN119743973APending Publication Date: 2025-04-01HON YOUNG SEMICON CORP
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Patent Information

Application Number
CN202311345498.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-09-27
Filing Date
2023-10-17
Publication Date
2025-04-01

AI Technical Summary

Technical Problem

When making silicon carbide (SiC) power components, the anisotropy of electron mobility makes it difficult to optimize the on-resistance and power loss of the components.

Method used

By etching on a substrate with a hexagonal crystal structure using a photoresist with an inclination angle, a lattice surface parallel to the C-axis is exposed, and an epitaxial layer is grown thereon, forming a transistor structure with high electron mobility.

Benefits of technology

It realizes improving electron mobility in silicon carbide power components, reducing on-resistance and power loss, and improving component performance.

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Abstract

The semiconductor device includes a substrate, an epitaxial layer and a transistor structure. The substrate is of a hexagonal crystal structure and is provided with a top surface perpendicular to a C axis, the top surface of the substrate comprises a lattice surface parallel to the C axis, the lattice surface is obtained by etching developed photoresist, and an inclination angle ranging from 30 degrees to 60 degrees is formed between the top surface of the developed photoresist and the substrate. The epitaxial layer is formed on the lattice surface. The transistor structure is formed in the epitaxial layer, on the epitaxial layer and on a surface of the substrate opposite to the epitaxial layer. Due to the fact that the lattice surface parallel to the C axis is etched through the photoresist development and dry etching method, the epitaxial layer can grow along the lattice surface parallel to the C axis during subsequent growth of the epitaxial layer, and then the transistor structure parallel to the C axis and with the increased electron mobility is obtained.
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