Back contact battery, manufacturing method thereof and photovoltaic module

Abstract

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell and a manufacturing method thereof, and a photovoltaic module, comprising a silicon wafer, a first semiconductor layer and a second semiconductor layer which are alternately arranged on the back surface of the silicon wafer, and a front passivation layer and an anti-reflection layer which are sequentially arranged on the front surface of the silicon wafer, the front passivation layer comprises a hydrogenated amorphous silicon oxide layer and a hydrogenated amorphous silicon layer, the film thickness of the hydrogenated amorphous silicon oxide layer is 0.5-2 nm, the oxygen doping amount is controlled to be 5%-15% by mass when the hydrogenated amorphous silicon oxide layer is prepared, and the thickness ratio of the hydrogenated amorphous silicon oxide layer to the hydrogenated amorphous silicon layer is 1: (2-12). According to the invention, epitaxy and twin crystal growth at the crystalline silicon interface of the silicon wafer can be effectively inhibited, the passivation effect on the crystalline silicon surface can be enhanced, the open-circuit voltage, the fill factor and the short-circuit current of the cell can be improved, and the conversion efficiency of the cell can be improved.

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