A colored photovoltaic module

Abstract

The present invention provides a color photovoltaic module, comprising: a photovoltaic cell having a light-receiving surface and a backlight surface opposite to each other; a distributed Bragg reflector located on the side of the photovoltaic cell having the light-receiving surface, and the thickness of each film layer in the distributed Bragg reflector satisfies a first preset formula, the first preset formula being: wherein d is the thickness of the film layer, λ is the wavelength of incident light, n is the refractive index of the film layer, and k is an odd number; a first packaging structure located on the side of the distributed Bragg reflector away from the photovoltaic cell; and a second packaging structure located on the side of the photovoltaic cell having the backlight surface. Through the present application, the problem of low energy efficiency of photovoltaic chips of color photovoltaic modules in the prior art is solved.

Description

Technical Field

[0001] The invention relates to the technical field of photovoltaic cells, and in particular to a color photovoltaic module. Background Art

[0002] As the concept of building photovoltaic integration has been more and more widely recognized in the photovoltaic field, people hope to be able to choose their favorite colors to decorate their buildings and highlight the personality of the buildings for photovoltaic products as building materials. This requires photovoltaic modules to have various colors to meet the requirements of aesthetics.

[0003] There are generally two ways to form existing color photovoltaic modules. One is to directly print a white ink layer on a screen printer or UV printer and then print a color ink layer on the white ink layer to form a color photovoltaic module; the other is to first print a color ink layer on a glass plate, then print a white ink layer on the color ink layer, and then package the glass plate and the photovoltaic module together to form a color photovoltaic module.

[0004] However, both of the above methods achieve colorization by adding a white ink layer and a color ink layer on the module end. Since the white ink layer and the color ink layer have a strong shielding effect on solar energy, the shielded photovoltaic wafer will be regarded as a load to consume the energy generated by other illuminated solar cell modules. The shielded photovoltaic wafer will heat up at this time, forming a hot spot effect. This hot spot effect seriously reduces the energy efficiency of the photovoltaic wafer. In addition, the addition of the white ink layer and the color ink layer not only increases the cost of the module end, but also increases the thickness and weight of the entire photovoltaic module, which is not conducive to the transportation and installation of the module.

[0005] Therefore, there is an urgent need for a photovoltaic module that can at least solve the problem of low energy efficiency of photovoltaic chips in existing color photovoltaic modules. Summary of the invention

[0006] The main purpose of the present invention is to provide a color photovoltaic module to solve the problem of low energy efficiency of photovoltaic chips of color photovoltaic modules in the prior art.

[0007] In order to achieve the above object, according to one aspect of the present invention, a color photovoltaic module is provided, comprising: a photovoltaic cell having a light-receiving surface and a backlight surface opposite to each other; a distributed Bragg reflector located on a side of the photovoltaic cell having the light-receiving surface, and the thickness of each film layer in the distributed Bragg reflector satisfies a first preset formula, and the first preset formula is:

[0008]

[0009] Wherein, d is the thickness of the film layer, λ is the wavelength of the incident light, n is the refractive index of the film layer, and k is an odd number; the first packaging structure is located on the side of the distributed Bragg reflector away from the photovoltaic cell; the second packaging structure is located on the side of the photovoltaic cell with the backlight surface.

[0010] Optionally, the number of film layers in the distributed Bragg reflector is n pairs, 2≤n≤15.

[0011] Optionally, the distributed Bragg reflector includes a plurality of first film layers and a plurality of second film layers stacked along a first direction, the first film layers and the second film layers are alternately arranged, the plurality of first film layers are the same material layers, and the plurality of second film layers are the same material layers.

[0012] Optionally, the first film layer is selected from any one of a titanium dioxide layer, a silicon nitride layer, a silicon carbide layer, a tantalum pentoxide layer and a gallium nitride layer.

[0013] Optionally, the second film layer is selected from any one of a silicon dioxide layer, a silicon oxynitride layer, an aluminum oxide layer and a silicon nitride layer.

[0014] Optionally, the adjacent first film layer and the second film layer are layers of different materials.

[0015] Optionally, the thickness of the film layer is 20nm-200nm.

[0016] Optionally, the thickness of the distributed Bragg reflector is 50 nm to 2000 nm.

[0017] Optionally, the photovoltaic cell includes any one of a crystalline silicon cell, a perovskite cell and a tandem cell.

[0018] Optionally, the first packaging structure includes a first adhesive film and a first cover plate that are stacked, and the first cover plate is bonded to the distributed Bragg reflector through the first adhesive film; the second packaging structure includes a second adhesive film and a second cover plate that are stacked, and the second cover plate is bonded to the photovoltaic cell through the second adhesive film.

[0019] The technical solution of the present invention is applied to provide a color photovoltaic module including a photovoltaic cell, a distributed Bragg reflector located on one side of the light-receiving surface of the photovoltaic cell, a first packaging structure located on the side of the distributed Bragg reflector away from the photovoltaic cell, and a side of the photovoltaic cell away from the distributed Bragg reflector. Since the thickness of each film layer in the distributed Bragg reflector can satisfy the above-mentioned first preset formula, for light of a specific wavelength, Fresnel reflection will occur at the interface of any two adjacent film layers in the distributed Bragg reflector, and the optical path difference of the reflected light is half a wavelength. Then, reflected light with a phase difference of π is generated at the above-mentioned interface, which will change the sign of the phase part of the reflection coefficient at the interface, and cause the reflected light to destructively interfere at the interface, thereby enhancing the reflection of the light of the specific wavelength and reducing the transmission of the light of the specific wavelength, so as to obtain a solar cell of a specific color and realize the colorization of the photovoltaic module. In addition, the distributed Bragg reflector in the present application only strongly reflects light of a specific wavelength and has a high transmittance to the rest of the light, thereby further reducing the optical loss of the color photovoltaic module, so that the color photovoltaic module has a higher power, and solves the problem of low energy efficiency of photovoltaic chips in existing color photovoltaic modules. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The accompanying drawings constituting a part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the accompanying drawings:

[0021] Figure 1 A schematic cross-sectional structure diagram of a color photovoltaic module according to an embodiment of the present application is shown;

[0022] Figure 2 Shows Figure 1 A schematic diagram of the cross-sectional structure of a distributed Bragg reflector in a colored photovoltaic module is shown;

[0023] Figure 3 The reflection / absorption spectra before and after adding the green distributed Bragg reflector in Example 1 of the present application are shown;

[0024] Figure 4 The reflection / absorption spectra before and after adding a red distributed Bragg reflector in Example 2 of the present application are shown.

[0025] The above drawings include the following reference numerals:

[0026] 10. First cover plate; 20. First adhesive film; 30. Distributed Bragg reflector; 40. Photovoltaic cell; 50. Second adhesive film; 60. Second cover plate; 301. First film layer; 302. Second film layer. DETAILED DESCRIPTION

[0027] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0028] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0029] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so as to describe the embodiments of the present invention described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0030] As described in the background technology, the color photovoltaic modules in the prior art are all colored by adding a white ink layer and a color ink layer to the module end. Since the white ink layer and the color ink layer have a strong shielding effect on solar energy, the shielded photovoltaic wafer will be treated as a load, consuming the energy generated by other illuminated solar cell modules. The shielded photovoltaic wafer will heat up at this time, forming a hot spot effect. This hot spot effect seriously reduces the energy efficiency of the photovoltaic wafer. In addition, the addition of the white ink layer and the color ink layer not only increases the cost of the module end, but also increases the thickness and weight of the entire photovoltaic module, which is not conducive to the transportation and installation of the module. In order to solve the problems of low energy efficiency of photovoltaic wafers in existing color photovoltaic modules and the inconvenience of transportation and installation of existing color photovoltaic modules, the present application provides a color photovoltaic module.

[0031] In some optional embodiments, a colored photovoltaic module, such as Figure 1 As shown, it includes: a photovoltaic cell 40 having a light-receiving surface and a backlight surface opposite to each other; a distributed Bragg reflector 30 located on one side of the photovoltaic cell 40 having the light-receiving surface, and the thickness of each film layer in the distributed Bragg reflector 30 satisfies a first preset formula, which is:

[0032]

[0033] Wherein, d is the thickness of the above-mentioned film layer, λ is the wavelength of the incident light, n is the refractive index of the above-mentioned film layer, and k is an odd number; the first packaging structure is located on the side of the above-mentioned distributed Bragg reflector 30 away from the above-mentioned photovoltaic cell 40; the second packaging structure is located on the side of the above-mentioned photovoltaic cell 40 having the above-mentioned backlight surface.

[0034] Specifically, the photovoltaic cell 40 may be any one of a first generation crystalline silicon cell, a second generation thin film cell or a third generation new cell. Among them, the first generation crystalline silicon cell may include a crystalline silicon cell (monocrystalline silicon solar cell and polycrystalline silicon solar cell). Monocrystalline silicon solar cells may include emitter back passivation cells (PERC), passivated emitter back surface fully diffused cells (PERT), tunneling oxide passivation contact cells (TOPCon), heterojunction cells (HJT) and interdigitated back contact cells (IBC), etc. The second generation thin film cell may include cadmium telluride thin film cells (CdTe), gallium arsenide thin film cells (GaAs) and copper indium gallium selenide (CIGS), etc. The third generation new cell may include dye sensitized cells (DSSCs), perovskite cells (PSCs) and quantum dot solar cells (QDSCs). Among them, the perovskite cell may include a single junction perovskite cell and a multi-junction stacked perovskite cell. Optionally, the multi-junction stacked cell may include but is not limited to a crystalline silicon / perovskite stacked cell and a full perovskite stacked cell.

[0035] Specifically, the distributed Bragg reflector 30 (Distributed_Bragg_Reflector, DBR) is a reflector structure, which includes an adjustable multi-layer film structure composed of two or more optical materials, and the refractive indexes of two adjacent film layers are different.

[0036] Optionally, the distributed Bragg reflector 30 in the present application may be a quarter reflector, wherein the thickness of each film layer corresponds to a quarter of the wavelength.

[0037] Specifically, by changing the wavelength of the incident light and setting the thickness and / or logarithm of the corresponding distributed Bragg reflector 30 , colored photovoltaic modules of different colors can be obtained.

[0038] For example, when the above-mentioned specific wavelength is λ1, the thickness of each film layer in the distributed Bragg reflector 30 may be:

[0039]

[0040] Wherein, d1 is the thickness of the above film layer;

[0041] For example, when the above-mentioned specific wavelength is λ2 (λ2 is different from λ1), the thickness of each film layer in the distributed Bragg reflector 30 may be:

[0042]

[0043] Wherein, d2 is the thickness of the above film layer.

[0044] It is mentioned here that when the number of film layer pairs in the distributed Bragg reflector 30, the material of each film layer and the initial thickness of each film layer are constant, the thickness of each film layer in the distributed Bragg reflector 30 can be an odd multiple of the initial thickness.

[0045] That is, the initial thickness of each film layer can be:

[0046]

[0047] Then the thickness of each film layer in the distributed Bragg reflector 30 can be:

[0048]

[0049] Specifically, Figure 1 As shown, the first packaging structure may include a first adhesive film 20 and a first cover plate 10 , and the first cover plate 10 and the distributed Bragg reflector 30 are bonded by the first adhesive film 20 .

[0050] Specifically, Figure 1 As shown, the second packaging structure may include a second adhesive film 50 and a second cover plate 60 , and the second cover plate 60 and the photovoltaic cell 40 are bonded via the second adhesive film 50 .

[0051] In the above embodiment, a color photovoltaic module includes a photovoltaic cell 40, a distributed Bragg reflector 30 located on the light-receiving side of the photovoltaic cell 40, a first packaging structure located on the side of the distributed Bragg reflector 30 away from the photovoltaic cell 40, and a side of the photovoltaic cell 40 away from the distributed Bragg reflector 30. Since the thickness of each film layer in the distributed Bragg reflector 30 can satisfy the above first preset formula, for light of a specific wavelength, Fresnel reflection will occur at the interface of any two adjacent film layers in the distributed Bragg reflector 30, and the optical path difference of the reflected light is half a wavelength. Then, reflected light with a phase difference of π is generated at the above interface, which will change the sign of the phase part of the reflection coefficient at the interface, and cause the reflected light to destructively interfere at the interface, thereby enhancing the reflection of the light of the specific wavelength and reducing the transmission of the light of the specific wavelength, so as to obtain a solar cell of a specific color and realize the colorization of the photovoltaic module. Furthermore, the distributed Bragg reflector 30 in the present application only strongly reflects light of a specific wavelength and has a high transmittance to the rest of the light, thereby further reducing the optical loss of the color photovoltaic module, making the color photovoltaic module have a higher power, and solving the problem of low energy efficiency of photovoltaic chips in existing color photovoltaic modules.

[0052] In order to compromise the effects of the number of pairs of film layers of the distributed Bragg reflector 30 and the refractive index difference between adjacent film layers on the reflectivity of the distributed Bragg reflector 30, in some optional embodiments, the number of the film layers in the distributed Bragg reflector 30 is n pairs, 2≤n≤15.

[0053] Specifically, the distributed Bragg reflector 30 includes a plurality of film layers stacked together, and the refractive indexes of two adjacent film layers are different. The two adjacent film layers with different refractive indexes may be a pair of film layers in the distributed Bragg reflector 30 .

[0054] In the above embodiment, since the reflectivity of the distributed Bragg reflector 30 is related to the logarithm of the film layer, the reflectivity of the distributed Bragg reflector 30 at a specific wavelength can be improved by increasing the logarithm of the film layer in the distributed Bragg reflector 30 .

[0055] In addition, the reflectivity of the distributed Bragg reflector 30 may also be related to the refractive index difference between adjacent film layers. Therefore, by increasing the refractive index difference between adjacent film layers in the distributed Bragg reflector 30, the reflectivity of the distributed Bragg reflector 30 at a specific wavelength may also be improved.

[0056] Optionally, the thickness of the film layer is 20nm to 200nm.

[0057] Optionally, the thickness of the distributed Bragg reflector 30 is 50 nm to 2000 nm.

[0058] like Figure 2 As shown, in some optional embodiments, the distributed Bragg reflector 30 includes a plurality of first film layers 301 and a plurality of second film layers 302 stacked along a first direction, the first film layers 301 and the second film layers 302 are alternately arranged, the plurality of first film layers 301 are layers of the same material, and the plurality of second film layers 302 are layers of the same material.

[0059] Specifically, the number of the first film layers 301 and the second film layers 302 is the same, so when the first film layers 301 and the second film layers 302 are alternately arranged, each first film layer 301 and an adjacent second film layer 302 constitute a pair of film layers in the distributed Bragg reflector 30 .

[0060] Specifically, each first film layer 301 has a different refractive index from the adjacent second film layer 302 .

[0061] On this basis, in order to simplify the preparation process of the distributed Bragg reflector 30, when a first film layer 301 has two adjacent second film layers 302, the two second film layers 302 adjacent to the first film layer 301 can be set as the same material layer; or when a second film layer 302 has two adjacent first film layers 301, the two first film layers 301 adjacent to the second film layer 302 can be set as the same material layer. Therefore, in the above embodiment, multiple first film layers 301 can be set as the same material layer, and multiple second film layers 302 can be set as the same material layer, which is conducive to the large-scale production of the distributed Bragg reflector 30 having the above multiple first film layers 301 and multiple second film layers 302.

[0062] In other optional embodiments, the materials of the plurality of first film layers 301 may be different, but it should be noted that the thickness of each first film layer 301 needs to satisfy the above first preset formula. Similarly, the materials of the plurality of second film layers 302 may be different, but it should be noted that the thickness of each second film layer 302 needs to satisfy the above first preset formula.

[0063] In some optional embodiments, such as Figure 2 As shown, in order to make the first film layer 301 have a higher refractive index, the first film layer 301 is selected from any one of a titanium dioxide layer, a silicon nitride layer, a silicon carbide layer, a tantalum pentoxide layer and a gallium nitride layer.

[0064] In some optional embodiments, such as Figure 2 As shown, in order to make the second film layer 302 have a lower refractive index than the first film layer 301, the second film layer 302 is selected from any one of a silicon dioxide layer, a silicon oxynitride layer, an aluminum oxide layer and a silicon nitride layer.

[0065] It should be noted here that since the refractive indices of the first film layer 301 and the second film layer 302 are different, when the first film layer 301 and the second film layer 302 are respectively silicon nitride layers, the first film layer 301 can be high-refractive silicon nitride and the second film layer 302 can be low-refractive silicon nitride.

[0066] In some optional embodiments, such as Figure 2 As shown, the adjacent first film layer 301 and the adjacent second film layer 302 are layers of different materials.

[0067] In the above embodiment, since light of a specific wavelength has different refractive indices in different material layers, in order to achieve the purpose of having different refractive indices for the first film layer 301 and the second film layer 302, it is only necessary to set the adjacent first film layer 301 and the second film layer 302 as different material layers, thereby simplifying the process.

[0068] In other optional embodiments, since the reflection bandwidth of the distributed Bragg reflector 30 is related to the refractive index difference between adjacent film layers, in order to make the reflected light of a specific wavelength produce a stronger reflection at the interface and the remaining light have a higher transmittance, the materials of the adjacent first film layer 301 and the second film layer 302 can also be adjusted to have a smaller refractive index difference, thereby reducing optical loss and making the color photovoltaic module have a higher power effect.

[0069] In addition, for the preparation process of a color photovoltaic cell provided in this application, it is only necessary to use a coating device to add a film layer structure corresponding to a distributed Bragg reflector to the light-receiving surface of the photovoltaic cell during the preparation of the photovoltaic cell. Since the thickness of the film layer structure corresponding to the distributed Bragg reflector is usually at the level of hundreds of nanometers, the thickness is greatly compressed compared to the traditional white ink layer and color ink layer (the film layer thickness is usually at the level of millimeters), which reduces the thickness and weight of the entire color photovoltaic module, simplifies the preparation process, and is also conducive to the transportation and installation of the color photovoltaic module.

[0070] In some exemplary embodiments, a specific color photovoltaic module may include a stacked glass cover, a front adhesive film, a distributed Bragg reflector, a front passivation layer, a silicon substrate, a back passivation layer, a back adhesive film, and a functional backplane.

[0071] Optionally, the silicon substrate may be an N-type silicon substrate or a P-type silicon substrate.

[0072] Optionally, the passivation layer may include at least one of an intrinsic amorphous silicon layer, an intrinsic polycrystalline silicon layer, an intrinsic nanocrystalline silicon layer, an intrinsic mixed crystal silicon layer, a silicon oxide layer, an aluminum oxide layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon carbon nitride oxide layer.

[0073] Optionally, the distributed Bragg reflector is composed of alternating layers of TiO2 / SiO2, wherein TiO2 serves as a high refractive index layer and SiO2 serves as a low refractive index layer.

[0074] In order to make the purpose, technical solutions and advantages of this application clearer, the following specific embodiments are combined with reference to Figure 3 and Figure 4 , further explain this application.

[0075] Example 1

[0076] This embodiment proposes a green photovoltaic module based on a distributed Bragg reflector, whose structure is provided with a glass cover, a front adhesive film, a distributed Bragg reflector, a front passivation layer, a silicon substrate, a back passivation layer, a back adhesive film and a functional backplane in sequence from bottom to top.

[0077] The distributed Bragg reflector in this embodiment includes an adjustable multilayer structure composed of two optical materials, wherein the high refractive index layer is titanium dioxide (TiO2) and the low refractive index layer is silicon dioxide (SiO2). The parameters of the distributed Bragg reflector of the green photovoltaic module are shown in Table 1 (green photovoltaic module (central wavelength 520nm) DBR design parameters).

[0078] Table 1

[0079] Material Refractive Index Thickness(nm) High refractive index layer <![CDATA[TiO2]]> 2.38 54.6 Low refractive index layer <![CDATA[SiO2]]> 1.46 89 High refractive index layer <![CDATA[TiO2]]> 2.38 54.6 Low refractive index layer <![CDATA[SiO2]]> 1.46 89

[0080] As can be seen from Table 1, the distributed Bragg reflector is composed of only 2 pairs of high and low refractive index materials, and the actual preparation may be 2 to 15 pairs. Based on this structure, the present application uses a virtual solar cell manufacturing simulator (PV Lighthouse) to perform optical simulation, such as Figure 3 As shown in the figure, the cell without distributed Bragg reflector (DBR) has no reflection at green wavelength (central wavelength 520nm) (Reflection without DBR), but after adding two pairs of distributed Bragg reflectors (DBR), strong reflection occurs at green wavelength, and the maximum reflectivity is close to 70% (Reflection with520nm DBR). And after adding two pairs of distributed Bragg reflectors, the transmission absorption is still relatively high, thus ensuring a higher cell efficiency.

[0081] Example 2

[0082] This embodiment proposes to provide a red photovoltaic module based on a distributed Bragg reflector, whose structure is provided with a glass cover, a front adhesive film, a distributed Bragg reflector, a front passivation layer, a silicon substrate, a back passivation layer, a back adhesive film and a functional backplane in sequence from bottom to top.

[0083] The distributed Bragg reflector in this embodiment includes an adjustable multilayer structure composed of two optical materials, wherein the high refractive index layer is titanium dioxide (TiO2) and the low refractive index layer is silicon dioxide (SiO2). The parameters of the distributed Bragg reflector of the green photovoltaic module are shown in Table 2 (DBR design parameters of the red photovoltaic module (central wavelength 632nm)).

[0084] Table 2

[0085] Material Refractive Index Thickness(nm) High refractive index layer <![CDATA[TiO2]]> 2.38 66 Low refractive index layer <![CDATA[SiO2]]> 1.46 108 High refractive index layer <![CDATA[TiO2]]> 2.38 66 Low refractive index layer <![CDATA[SiO2]]> 1.46 108

[0086] As can be seen from Table 2, the distributed Bragg reflector is composed of only 2 pairs of high and low refractive index materials, and the actual preparation may be 2 to 15 pairs. Based on this structure, the present application uses PV Lighthouse to perform optical simulation, such as Figure 4 As shown in the figure, the cell without distributed Bragg reflector (DBR) has no reflection at the red wavelength (central wavelength 632nm) (Reflection without DBR), but after adding two pairs of distributed Bragg reflectors (DBR), strong reflection occurs at the red wavelength, and the maximum reflectivity is close to 60% (Reflection with 632nm DBR). And after adding two pairs of distributed Bragg reflectors, the transmission absorption is still relatively high, thus ensuring a higher cell efficiency.

[0087] From the above description, it can be seen that the above embodiments of the present invention achieve the following technical effects:

[0088] Through the present application, a color photovoltaic module includes a photovoltaic cell, a distributed Bragg reflector located on one side of the light-receiving surface of the photovoltaic cell, a first packaging structure located on the side of the distributed Bragg reflector away from the photovoltaic cell, and a side of the photovoltaic cell away from the distributed Bragg reflector. Since the thickness of each film layer in the distributed Bragg reflector can satisfy the above-mentioned first preset formula, for light of a specific wavelength, Fresnel reflection will occur at the interface of any two adjacent film layers in the distributed Bragg reflector, and the optical path difference of the reflected light is half a wavelength. Then, reflected light with a phase difference of π is generated at the above-mentioned interface, which will change the sign of the phase part of the reflection coefficient at the interface, and cause the reflected light to destructively interfere at the interface, thereby enhancing the reflection of the light of the specific wavelength and reducing the transmission of the light of the specific wavelength, so as to obtain a solar cell of a specific color and realize the colorization of the photovoltaic module. In addition, the distributed Bragg reflector in the present application only strongly reflects light of a specific wavelength and has a high transmittance to the rest of the light, thereby further reducing the optical loss of the color photovoltaic module, so that the color photovoltaic module has a higher power, and solves the problem of low energy efficiency of photovoltaic chips in existing color photovoltaic modules.

[0089] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A color photovoltaic module, characterized in that: include: A photovoltaic cell has an opposing light-receiving side and a backlight side; A distributed Bragg reflector is located on a side of the photovoltaic cell having the light-receiving surface, and the thickness of each film layer in the distributed Bragg reflector satisfies a first preset formula, which is: Wherein, d is the thickness of the film layer, λ is the wavelength of the incident light, n is the refractive index of the film layer, and k is an odd number; A first packaging structure is located on a side of the distributed Bragg reflector away from the photovoltaic cell; The second packaging structure is located on the side of the photovoltaic cell having the backlight surface.

2. The color photovoltaic module according to claim 1, characterized in that: The number of the film layers in the distributed Bragg reflector is n pairs, 2≤n≤15.

3. The color photovoltaic module according to claim 1, characterized in that: The distributed Bragg reflector includes a plurality of first film layers and a plurality of second film layers stacked along a first direction, wherein the first film layers and the second film layers are alternately arranged, and the plurality of first film layers are made of the same material, and the plurality of second film layers are made of the same material.

4. The color photovoltaic module according to claim 3, characterized in that: The first film layer is selected from any one of a titanium dioxide layer, a silicon nitride layer, a silicon carbide layer, a tantalum pentoxide layer and a gallium nitride layer.

5. The color photovoltaic module according to claim 3, characterized in that: The second film layer is selected from any one of a silicon dioxide layer, a silicon oxynitride layer, an aluminum oxide layer and a silicon nitride layer.

6. The color photovoltaic module according to claim 3, characterized in that: The adjacent first film layer and the second film layer are layers of different materials.

7. The color photovoltaic module according to any one of claims 1 to 6, characterized in that: The thickness of the film layer is 20nm-200nm.

8. The color photovoltaic module according to any one of claims 1 to 6, characterized in that: The thickness of the distributed Bragg reflector is 50nm-2000nm.

9. The color photovoltaic module according to any one of claims 1 to 6, characterized in that: The photovoltaic cell includes any one of a crystalline silicon cell, a perovskite cell and a stacked cell.

10. The color photovoltaic module according to any one of claims 1 to 6, characterized in that: The first packaging structure includes a first adhesive film and a first cover plate which are stacked, and the first cover plate is bonded to the distributed Bragg reflector through the first adhesive film; The second packaging structure includes a second adhesive film and a second cover plate which are stacked, and the second cover plate is bonded to the photovoltaic cell via the second adhesive film.

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