Light emitting diode and light emitting device

By setting depressions on the edge of the second mesa of the light emitting diode and designing edges with different morphology, the problem of difficult to distinguish positive and negative electrodes in the prior art is solved, and a simpler crystal solidification process and reduced process costs are achieved.

CN119744048APending Publication Date: 2025-04-01QUANZHOU SANAN SEMICON TECH CO LTD
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Patent Information

Application Number
CN202411803054.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-09
Publication Date
2025-04-01

AI Technical Summary

Technical Problem

During the crystal solidification process of existing red light emitting diodes, due to the poor light transmittance of the patterned substrate, it is difficult to distinguish positive and negative electrodes, which increases process cost and difficulty.

Method used

A light emitting diode is designed, with its second mesa having four edges, wherein the first edge has a different morphology from its corresponding second edge, and at least one depression is provided at the edge of the second mesa, with the second semiconductor layer at the depression being removed by at least 60% of its thickness to effectively distinguish the first electrode from the second electrode when viewed from the back.

Benefits of technology

Through different edge morphology and recessed designs, the convenience of distinguishing the positive and negative electrodes of the LEDs when observing from the back is significantly improved, simplifying the crystal solidification process and reducing process costs.

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Abstract

The invention relates to the technical field of semiconductors, in particular to a light-emitting diode and a light-emitting device.The light-emitting diode comprises an epitaxial structure, the epitaxial structure comprises a first semiconductor layer, a second semiconductor layer and an active layer, the surface of the side, away from the active layer, of the first semiconductor layer is a first table top, and the upper surface of the second semiconductor layer is partially covered with the active layer; and the part which is not covered by the active layer is a second table top. The first electrode is arranged on the first table top, and the second electrode is arranged on the second table top; wherein the outermost circle of the second table top is the edge of the second table top, the short edge, close to the first electrode, of the second table top is the first edge, the short edge, close to the second electrode, of the second table top is the second edge, the first edge and the second edge have different morphologies, and when observed from the back face, the first electrode and the second electrode can be effectively distinguished through different morphologies; therefore, the die bonding process is facilitated.
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