Light emitting diode and light emitting device

Abstract

The application relates to the technical field of semiconductors, in particular to a light-emitting diode and a light-emitting device. The light-emitting diode comprises: an epitaxial structure, the epitaxial structure comprising a first semiconductor layer, a second semiconductor layer and an active layer; the surface of the first semiconductor layer far from the active layer is a first mesa; the upper surface of the second semiconductor layer is partially covered by the active layer, and the part of the second semiconductor layer not covered by the active layer is a second mesa; a first electrode is arranged on the first mesa; and a second electrode is arranged on the second mesa; wherein the outermost circle of the second mesa is a second mesa edge; the short side of the second mesa close to the first electrode is a first edge; the short side of the second mesa close to the second electrode is a second edge; the first edge and the second edge have different appearances; when observed from the back, the first electrode and the second electrode can be effectively distinguished through the different appearances, thereby facilitating the die bonding process.

Description

Technical Field

[0001] This invention relates to the field of semiconductor-related technologies, and in particular to a light-emitting diode and a light-emitting device. Background Technology

[0002] Light-emitting diodes (LEDs) have been widely used in solid-state lighting, displays, and mobile lighting due to their advantages such as high luminous efficiency, long lifespan, and environmental friendliness.

[0003] Flip-chip LEDs are an effective technology for further improving the luminous efficiency of LEDs due to their advantages such as no wire bonding, no electrode shielding, and excellent heat dissipation. In red LEDs, the epitaxial growth is usually transferred to a transparent substrate, and a bonding layer is added between the substrate and the epitaxial growth. In order to achieve better light emission, more and more products choose to pattern the substrate (PSS) to further enable light to be emitted from the back substrate.

[0004] Because red LEDs typically have a thicker P-type layer to improve ESD transmittance, the thicker P-type layer can sometimes make it difficult to distinguish the positive and negative electrodes when viewed from the back (substrate side). To improve light emission, red LEDs sometimes use a PSS (Patterned Substrate Set) patterned substrate. While the patterned substrate and bonding layer facilitate light emission, the poor transmittance of the patterned substrate makes it even more difficult to distinguish the positive and negative electrodes when viewed from the back. This increases the difficulty of die bonding and may require additional steps to identify the positions of the positive and negative electrodes, thus increasing manufacturing costs. Summary of the Invention

[0005] The present invention provides a light-emitting diode and a light-emitting device to solve at least one of the above-mentioned problems.

[0006] On one hand, the present invention provides a light-emitting diode, comprising: The epitaxial structure includes a first semiconductor layer, a second semiconductor layer, and an active layer. The active layer is located between the first semiconductor layer and the second semiconductor layer. The surface of the first semiconductor layer away from the active layer is called the first mesa. The upper surface of the second semiconductor layer is partially covered by the active layer, and the part of it not covered by the active layer is called the second mesa.

[0007] The first electrode is disposed on the first platform, and the second electrode is disposed on the second platform; Among them, the outermost ring of the second mesa is the edge of the second mesa, the short side of the second mesa near the first electrode is the first edge, the short side of the second mesa near the second electrode is the second edge, the edge connecting the first edge and the second edge is the third edge and the fourth edge, the direction from the first edge to the second edge is the Y direction, the direction perpendicular to the Y direction is the X direction, and the first edge and the second edge have different morphologies.

[0008] The present invention provides a further light-emitting diode in relation to the above-mentioned light-emitting diode: the second mesa has at least one recess located at the edge of the second mesa, the second semiconductor layer at the recess has at least 60% of its thickness removed, and the recess recedes inward from the edge of the second mesa toward the first mesa.

[0009] Secondly, the present invention also provides a light-emitting device, including the above-described light-emitting diode.

[0010] The second mesa of the light-emitting diode provided by the present invention has four edges, wherein the first edge and its corresponding second edge have different morphologies. Therefore, when viewed from the back side, the first electrode and the second electrode can be effectively distinguished by the different morphologies, thereby facilitating the die bonding process.

[0011] The light-emitting device provided by the present invention has the above-described light-emitting diode, and therefore also has the above-described advantages. Attached Figure Description

[0012] Figure 1 A top view of an existing light-emitting diode; Figure 2 This is a cross-sectional view of Embodiment 1 of the present invention; Figure 3 This is a top view of Embodiment 1 of the present invention; Figure 4 A schematic diagram illustrating the parameters of Embodiment 1 of the present invention is provided below. Figure 5 This is a schematic diagram further illustrating the parameters of Embodiment 1 of the present invention; Figure 6 This is a top view of Embodiment 2 of the present invention; Figure 7 This is a top view of Embodiment 3 of the present invention; Figure 8 This is a top view of Embodiment 4 of the present invention; Figure 9 A schematic diagram further illustrating the parameters of Embodiment 4 of the present invention; Figure 10 A schematic diagram further illustrating the parameters of Embodiment 4 of the present invention; Figure 11 This is a top view of Embodiment 5 of the present invention; Figure 12 This is a top view of Embodiment Six of the present invention; Figure 13 This is a top view of Embodiment Seven of the present invention; Figure 14 This is a cross-sectional view of the light-emitting device according to Embodiment 8 of the present invention.

[0013] Figure reference numerals: 10 Light-emitting diode; 100 Substrate; 110 Bonding layer; 120 Epitaxial structure; 121 First semiconductor layer; 122 Active layer; 123 Second semiconductor layer; 131 First electrode; 132 Second electrode; 141 First pad; 142 Second pad; 150 Insulating layer. T1 First tabletop, T2 Second tabletop, 200 Second tabletop edge, B1 First edge, B2 Second edge, B3 Third edge, B4 Fourth edge P concave, G convex 20 Light-emitting device 21 Driving substrate Detailed Implementation

[0014] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application. It should be noted that, unless otherwise specified, the following embodiments and features in the embodiments can be combined with each other.

[0015] It should be understood that the illustrations provided in the embodiments of this invention are merely schematic representations of the basic concept of the invention. Although the illustrations only show components relevant to the invention and are not drawn according to the actual number, shape, and size of components in implementation, the shape, quantity, and proportion of each component can be arbitrarily changed in actual implementation, and the component layout may also be more complex. The structures, proportions, sizes, etc., shown in the accompanying drawings are only used to complement the content disclosed in the specification for those skilled in the art to understand and read, and are not intended to limit the conditions under which this application can be implemented. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationships, or adjustments to the size, without affecting the effects and objectives that the invention can produce, should still fall within the scope of the technical content disclosed in this application.

[0016] like Figure 1 As shown, the existing light-emitting diode has a first electrode 131 and a second electrode 132. However, from a top view, since the first edge on the first electrode side and the second edge on the second electrode side are completely identical in morphology, it is difficult to distinguish the first electrode 131 and the second electrode 132 when observing the electrodes from the substrate direction during the die bonding process, which brings certain difficulties.

[0017] To solve the above problems, the inventors, through experimental design and verification, invented a light-emitting diode, comprising: The epitaxial structure includes a first semiconductor layer, a second semiconductor layer, and an active layer. The active layer is located between the first semiconductor layer and the second semiconductor layer. The surface of the first semiconductor layer away from the active layer is called the first mesa. The upper surface of the second semiconductor layer is partially covered by the active layer, and the part of it not covered by the active layer is called the second mesa.

[0018] The first electrode is disposed on the first platform, and the second electrode is disposed on the second platform; Among them, the outermost ring of the second mesa is the edge of the second mesa, the short side of the second mesa near the first electrode is the first edge, the short side of the second mesa near the second electrode is the second edge, the edge connecting the first edge and the second edge is the third edge and the fourth edge, the direction from the first edge to the second edge is the Y direction, the direction perpendicular to the Y direction is the X direction, and the first edge and the second edge have different morphologies.

[0019] Optionally, the second mesa has at least one recess located at the edge of the second mesa, where at least 60% of the thickness of the second semiconductor layer is removed, and the recess recedes inward from the edge of the second mesa toward the first mesa.

[0020] Optionally, the total horizontal projected area of ​​the recesses in the second semiconductor layer accounts for 0.5% to 20% of the total projected area of ​​the second semiconductor layer.

[0021] Optionally, one or more depressions exist at the first edge. Optionally, a recess exists at the first edge, and the ratio of the horizontal projected area of ​​the recess to the projected area of ​​the second semiconductor layer ranges from 0.5% to 20%. Optionally, there is a depression at the first edge, the depression having a length D1 in the Y direction, and the ratio of the length D1 to the length L3 of the third edge is in the range of 1% to 10%.

[0022] Optionally, there is a depression at the first edge, the depression having a width W1 in the X direction, and the ratio of the depression width W1 to the length L1 of the first edge in the X direction is in the range of 5% to 95%.

[0023] Optionally, there is a recess at the first edge that extends along the X direction to the third edge.

[0024] Optionally, a recess exists at the third edge, extending along the Y direction to the first edge.

[0025] Optionally, a recess exists at the third edge, and the ratio of the horizontal projected area of ​​the recess to the projected area of ​​the second semiconductor layer ranges from 0.5% to 20%.

[0026] Optionally, the recess extending from the third edge to the first edge along the Y direction has a recess length D2 in the Y direction, and the ratio of the recess length D2 to the length of the third edge in the Y direction ranges from 5% to 95%. Optionally, the recess extending from the third edge to the first edge along the Y direction has a recess width W2 in the X direction, and the ratio of the recess width to the length of the first edge in the X direction is in the range of 1% to 15%.

[0027] Optionally, there is a depression at the first edge that extends along the X direction to a depression at the third edge.

[0028] Optionally, the depressions at the first and third edges are connected, and the horizontal projection shape is L-shaped or stepped.

[0029] Optionally, there may be one or more depressions at the fourth edge.

[0030] Optionally, the recess at the fourth edge extends along the Y direction to the first edge.

[0031] Optionally, there is a depression at the first edge and a protrusion at the corresponding position of the depression at the second edge.

[0032] Optionally, the light-emitting diode also includes a substrate, which is a patterned sapphire substrate.

[0033] Optionally, the light-emitting diode further includes a bonding layer disposed on the substrate, the bonding layer being an oxide bonding layer.

[0034] The present invention also provides a light-emitting device comprising a light-emitting diode according to any of the above claims.

[0035] The present invention will now be described in detail with reference to specific embodiments. Example 1

[0036] This embodiment provides a light-emitting diode (LED), see [link]. Figure 2The light-emitting diode 10 may include a substrate 100, which may be a sapphire substrate. In this embodiment, a patterned sapphire substrate (PSS sapphire substrate) is selected to further enhance the transmission of light from the substrate 100. An epitaxial structure 120 is disposed on the substrate 100, consisting of a first semiconductor layer 121, an active layer 122, and a second semiconductor layer 123 from top to bottom. The first semiconductor layer 121 may be an N-type semiconductor layer, the active layer 122 may be a multilayer quantum well layer that can provide red or infrared light radiation, and the second semiconductor layer 123 may be a P-type semiconductor layer. The N-type semiconductor layer, the multilayer quantum well layer, and the P-type semiconductor layer are only the basic building blocks of the semiconductor stack. In addition, the semiconductor stack may also include other functional structural layers that optimize the performance of the light-emitting diode, such as ohmic contact layers or current spreading layers. In this embodiment, the light-emitting diode is preferably a flip-chip light-emitting diode, and preferably a red light-emitting diode or an infrared light-emitting diode. The active layer 122 is made of AlGaInP, and the second semiconductor layer 123 is made of GaP.

[0037] The upper surface of the first semiconductor layer 121 that is not in contact with the active layer 122 is called the first mesa T1. The upper surface of the second semiconductor layer 123 is partially covered by the active layer 122, and the part of it that is not covered by the active layer 122 is called the second mesa T2.

[0038] It also includes a first electrode 131 disposed on a first mesa T1 and electrically connected to a first semiconductor layer 121, and a second electrode 132 disposed on a second mesa T2 and electrically connected to a second semiconductor layer 123. The first electrode 131 and the second electrode 132 can be selected from one or an alloy of Au, Pt, Ti, Ge, Ni, and Be.

[0039] This embodiment is a flip-chip light-emitting diode, and further includes a first pad 141 disposed on and electrically connected to the first electrode 131, and a second pad 142 disposed on and electrically connected to the second electrode 132. This invention does not exclude the possibility that the first electrode 131 and the second electrode 132 include pads. The first pad 141 and the second pad 142 can be one or more of Ti / Al / Ni / Au / Pt / Sn.

[0040] It may also include a bonding layer 110 for connecting the substrate 100 and the epitaxial structure 120. In some embodiments, to enhance the ability of light to exit from the substrate 100, the bonding layer 110 may be etched into an uneven shape. Furthermore, the bonding layer 110 may be a transparent oxide bonding layer, such as aluminum oxide or silicon oxide or a combination thereof, to improve a more suitable refractive index, thereby forming a change in refractive index with the substrate 100, which is more conducive to light exit. In this embodiment, the substrate 100 is sapphire with a refractive index of 1.7, and the bonding layer 110 is silicon oxide with a refractive index of 1.45. Such a refractive index is conducive to the light generated by the epitaxial structure 120 being emitted from the substrate 100 through the bonding layer 110. This embodiment also includes an insulating layer 150, which can protect the epitaxial structure 120. The insulating layer 150 can be a single-layer structure, such as magnesium fluoride or silicon nitride, or a multi-layer structure, such as a DBR mirror composed of SiO2 and TiO2, or a combination of at least two of various structures such as magnesium fluoride, silicon nitride, SiO2, TiO2, ZnO2, ZrO2, Cu2O3, etc. In this embodiment, the insulating layer 150 is a combination of magnesium fluoride and a DBR mirror, which can enhance light reflection and effectively protect the epitaxial structure 120.

[0041] like Figure 3 As shown, the outermost ring of the second mesa T2 is the second mesa edge 200. The short side of the second mesa T2 closest to the first electrode 131 is the first edge B1, and the short side of the second mesa T2 closest to the second electrode is the second edge B2. The edges between the first edge B1 and the second edge B2 are the third edge B3 and the fourth edge B4. In this text, for ease of understanding, the direction from the first edge B1 to the second edge B2 is defined as the Y direction, and the direction perpendicular to the Y direction is defined as the X direction. In this embodiment, the direction from the third edge B3 to the fourth edge B4 is the X direction.

[0042] like Figure 3 As shown, the first edge B1 and the second edge B2 have different morphologies. With this design, when observed from the back side (substrate 100 side), the first electrode 131 and the second electrode 132 can be effectively distinguished by different morphologies, thereby facilitating the crystal bonding process.

[0043] In some embodiments, a recess can be formed at the edge of the second mesa T2 to create a mark. At least 60% of the thickness of the second semiconductor layer 123 at the recess is removed, preferably 80%-100%, to thin the second semiconductor layer 123, making the recess thinner and easier to mark and observe. In this embodiment, the second semiconductor layer 123 at the recess is completely removed. The recess can be formed by etching, but the invention is not limited to this. Figure 3As shown, in this embodiment, the second edge 202 is distinguished by setting a recess P at the position of the first edge 201.

[0044] For ease of understanding, Figure 4 for Figure 3 A schematic diagram retaining only the edges. For example... Figure 4 As shown, in some embodiments, the horizontal projected area S2 of the recess P is 0.5%–20% of the projected area S1 of the second semiconductor layer, that is, S2 / S1 is 0.5%–20%. If this value is less than 0.5%, the marking will be too small to be identified, and the first edge B1 and the second edge B2 cannot be well distinguished, thus the first electrode 131 and the second electrode 132 cannot be distinguished. Conversely, if this value is greater than 20%, the remaining second mesa T2 is too small, which is not conducive to the reliability of the light-emitting diode 10. Preferably, S2 / S1 is 8%–15%.

[0045] like Figure 5 As shown, the recess P has a recess length D1 in the Y direction, and the recess length D1 has a ratio D1 / L3 to the length L3 of the third edge B3. In some embodiments, this ratio ranges from 1% to 10%. If this value is too small, it will not serve as a conspicuous marker; if this value is too large, the recess P may extend beyond the edge of the first platform T1, affecting the normal operation of the light-emitting diode 10. Preferably, D1 / L3 can be 4% to 8%.

[0046] Similarly, the recess P has a recess width W1 in the X direction, and the recess width W1 has a ratio W1 / L1 to the length L1 of the first edge B1 in the X direction. In some embodiments, the ratio ranges from 5% to 95%. Similarly, if the value is too small, it will not serve as a conspicuous marker, and if the value is too large, it will result in too few remaining second mesa T2, which may easily cause reliability problems of the light-emitting diode 10.

[0047] In some embodiments, the shape of the recess P can be square, semi-circular, bridge-shaped, etc. For ease of understanding, this embodiment uses a square shape as the shape of the recess P, but it is not limited to this. Example 2

[0048] like Figure 6 As shown, in this embodiment, multiple recesses P are provided at the first edge B1, which can also make the first edge B1 mark more conspicuous and easier to distinguish. Example 3

[0049] like Figure 7 As shown, this embodiment is a variation of embodiment one. There is a depression P at the first edge B1, and the depression P extends along the X direction to the third edge B3.

[0050] In this embodiment, P is extended to the third edge B3. From the top view, the first edge is divided into upper and lower ends, forming an L-shaped pattern, which can more conspicuously form a mark to distinguish the positions of the first electrode 131 and the second electrode 132. Example 4

[0051] like Figure 8 As shown, in this embodiment, a recess P is provided at the third edge B3, and the recess P extends along the Y direction to the first edge B1. With this design, in the top view, there is a clear notch (recess P) at the upper left corner where the first electrode 131 is located, which can be used to identify the first electrode 131.

[0052] like Figure 9 As shown, the recess P in this embodiment has a horizontal projected area S2, which has a ratio S2 / S1 to the area S1 of the second semiconductor layer. In some embodiments, the ratio ranges from 0.5% to 20%, and in this embodiment, the range is preferably 8% to 15%, which makes the recess P easier to identify.

[0053] like Figure 10 As shown, in this embodiment, the recess P has a recess length D2 in the Y direction. The recess length D2 and the length L3 of the third edge B3 in the Y direction have a ratio D2 / L3. In some embodiments, the ratio ranges from 5% to 95%. In this embodiment, the ratio is preferably 15% to 25%.

[0054] Similarly, in this embodiment, the recess P has a recess width W2 in the X direction. The recess width W2 and the length L1 of the first edge B1 in the X direction have a ratio W2 / L1. In some embodiments, this ratio ranges from 1% to 15%. If this value is too small, it will not serve as a conspicuous marker. If this value is too large, the recess P may exceed the edge of the first platform T1, affecting the normal operation of the light-emitting diode 10. Preferably, W2 / L1 can be 5% to 10%. Example 5

[0055] like Figure 11 As shown, in this embodiment, both the first edge B1 and the third edge B3 have a recess P, which extends along their respective directions and connects together. In terms of shape, they present an L-shaped or stepped appearance, which is more conducive to the identification of the first electrode 131. Example 6

[0056] like Figure 12 As shown, in this embodiment, based on embodiment four, a recess P is also provided at the fourth edge B4.

[0057] Furthermore, the depression P at the fourth edge B4 extends to the first edge B1, thereby removing both sides of the first edge B1. In the top view, a protrusion is formed at the first edge B1, thus effectively distinguishing the first electrode 131. Example 7

[0058] like Figure 13 As shown, this embodiment is designed based on embodiment one.

[0059] There is a recess P at the first edge B1. Correspondingly, in this embodiment, a protrusion G is provided at the second edge B2. The protrusion G is located at the corresponding position of the recess P. The protrusion G can be formed by etching adjacent parts.

[0060] By simultaneously setting the recess P and the protrusion G, the first electrode 131 and the second electrode 132 can be better identified. Example 8

[0061] like Figure 14 As shown, the present invention also provides a light-emitting device 20, which has a driving substrate 21 on which a plurality of light-emitting diodes 10 are disposed, wherein the light-emitting diodes 10 are any of the light-emitting diodes mentioned above or a combination thereof.

[0062] In summary, the present invention provides a light-emitting diode 10, which, compared with traditional light-emitting diodes (such as...), provides a... Figure 1 The present invention provides several embodiments in which the first edge and its corresponding second edge have different morphologies. Therefore, when viewed from the back side, the first electrode 131 and the second electrode 132 can be effectively separated by different morphologies, thereby facilitating the crystal solidification process.

[0063] The present invention also provides a light-emitting device 20, which is equipped with the above-described light-emitting diode 10, and therefore also has the above-described advantages.

[0064] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light-emitting diode, characterized in that: include: An epitaxial structure, comprising a first semiconductor layer, a second semiconductor layer, and an active layer, wherein the active layer is located between the first semiconductor layer and the second semiconductor layer, the surface of the first semiconductor layer away from the active layer is a first mesa, and the upper surface of the second semiconductor layer is partially covered by the active layer, the portion of which is not covered by the active layer is a second mesa. A first electrode is disposed on the first platform, and a second electrode is disposed on the second platform; The outermost ring of the second platform is the edge of the second platform. The short side of the second platform near the first electrode is the first edge. The short side of the second platform near the second electrode is the second edge. The edges connecting the first edge and the second edge are the third edge and the fourth edge. The direction from the first edge to the second edge is the Y direction, and the direction perpendicular to the Y direction is the X direction. The first edge and the second edge have different morphologies.

2. A light-emitting diode according to claim 1, characterized in that: The second mesa has at least one recess located at the edge of the second mesa, where at least 60% of the thickness of the second semiconductor layer has been removed, and the recess recedes inward from the edge of the second mesa toward the first mesa.

3. A light-emitting diode according to claim 2, characterized in that: The total horizontal projected area of ​​the recess in the second semiconductor layer accounts for 0.5%–20% of the total projected area of ​​the second semiconductor layer.

4. A light-emitting diode according to claim 2, characterized in that: There are one or more depressions at the first edge.

5. A light-emitting diode according to claim 4, characterized in that: There is a depression at the first edge, and the ratio of the horizontal projected area of ​​the depression to the projected area of ​​the second semiconductor layer ranges from 0.5% to 20%.

6. A light-emitting diode according to claim 4, characterized in that: There is a depression at the first edge, and the depression has a length D1 in the Y direction. The ratio of the length D1 to the length L3 of the third edge is in the range of 1% to 10%.

7. A light-emitting diode according to claim 4, characterized in that: There is a depression at the first edge, and the depression has a width W1 in the X direction. The ratio of the width W1 to the length L1 of the first edge in the X direction is between 5% and 95%.

8. A light-emitting diode according to claim 4, characterized in that: There is a depression at the first edge, which extends along the X direction to the third edge.

9. A light-emitting diode according to claim 2, characterized in that: There is a depression at the third edge, which extends along the Y direction to the first edge.

10. A light-emitting diode according to claim 9, characterized in that: There is a depression at the third edge, and the ratio of the horizontal projected area of ​​the depression to the projected area of ​​the second semiconductor layer ranges from 0.5% to 20%.

11. A light-emitting diode according to claim 9, characterized in that: The indentation extending from the third edge to the first edge in the Y direction has a length D2 in the Y direction, and the ratio of the length D2 to the length of the third edge in the Y direction is in the range of 5% to 95%.

12. A light-emitting diode according to claim 9, characterized in that: The indentation extending from the third edge to the first edge along the Y direction has a width W2 in the X direction, and the ratio of the width of the indentation to the length of the first edge in the X direction is in the range of 1% to 15%.

13. A light-emitting diode according to claim 9, characterized in that: There is a depression at the first edge, which extends along the X direction to the depression at the third edge.

14. A light-emitting diode according to claim 13, characterized in that: The depressions at the first and third edges are connected, and their horizontal projection shapes are L-shaped or stepped.

15. A light-emitting diode according to claim 9, characterized in that: There are one or more depressions at the fourth edge.

16. A light-emitting diode according to claim 15, characterized in that: The depression at the fourth edge extends along the Y direction to the first edge.

17. A light-emitting diode according to claim 2, characterized in that: There is a depression at the first edge, and a protrusion at the corresponding position of the depression at the second edge.

18. A light-emitting diode according to claim 1, characterized in that: The light-emitting diode also includes a substrate, which is a patterned sapphire substrate.

19. A light-emitting diode according to claim 18, characterized in that: The light-emitting diode further includes a bonding layer disposed on the substrate, and the bonding layer is an oxide bonding layer.

20. A light-emitting device, characterized in that: Includes the light-emitting diode described in any one of claims 1-19 above.

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