Light emitting diode and light emitting device

Abstract

The present application provides a light-emitting diode and a light-emitting device. The light-emitting diode includes a plurality of light-emitting units, a first insulating layer and a plurality of electrode layers; there is a spacing area between adjacent light-emitting units; the first insulating layer is at least arranged below the spacing area; a plurality of electrode layers are arranged below the first insulating layer, and are used to connect adjacent light-emitting units in series; wherein the first insulating layer has a reflective effect, or the first insulating layer is a transparent insulating layer, and at least the electrode layer below the corresponding spacing area has a reflective effect, or the first insulating layer and at least the electrode layer below the corresponding spacing area both have a reflective effect, so that the loss of light in the spacing area can be reduced, so that the originally absorbed light can be reflected, the light intensity of the spacing area is increased, the dark area is reduced, the light uniformity of the light-emitting diode is improved, and the overall light brightness of the light-emitting diode is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to a light emitting diode and a light emitting device. Background Art

[0002] Light Emitting Diode (LED) is a semiconductor light-emitting device, which is widely used in lighting, display equipment, automobiles, communications and other fields due to its significant advantages such as high efficiency, long life, environmental protection and energy saving. While pursuing higher brightness and wider lighting range, the lighting uniformity of LED light sources has also become the focus of the industry.

[0003] However, in the design of a single LED chip, multiple light-emitting units are integrated inside the chip. Adjacent light-emitting units cannot be completely seamlessly connected, but there are certain intervals. These intervals form physical "blind spots" on the chip surface, resulting in the inability of light to be directly emitted from these areas during illumination, thus generating dark areas. The dark areas have an adverse effect on the effect of LED light sources: first, the dark areas destroy the uniformity of the illuminated area, making the overall lighting effect appear mottled and uneven; second, in situations where high uniformity lighting is required (such as car headlights, indoor lighting, etc.), the presence of dark areas will significantly reduce the lighting quality and affect the user's visual experience; in addition, dark areas may also have a certain impact on the optical properties of LED light sources (such as light intensity distribution, color temperature, etc.), further limiting the application scope of LED light sources.

[0004] In order to solve the problem of dark areas between adjacent light-emitting units in a single LED chip, the present application provides a light-emitting diode and a light-emitting device. Summary of the invention

[0005] In view of the defects and deficiencies of light-emitting diodes in the prior art, the present application provides a light-emitting diode and a light-emitting device. The light-emitting diode corresponds to the spacing area between adjacent light-emitting units, and the first insulating layer and / or the electrode layer located inside the light-emitting diode are set to have a reflective effect, thereby effectively reflecting the light entering the spacing area, increasing the light intensity of the spacing area, reducing the difference in brightness between the light-emitting units, and improving the uniformity of the light emission of the light-emitting diode.

[0006] An embodiment of the present application provides a light emitting diode, including:

[0007] A plurality of light-emitting units, wherein the plurality of light-emitting units include a first light-emitting unit to an Nth light-emitting unit, where N is an integer not less than 2; each of the light-emitting units includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence from top to bottom, and a spacing region is provided between adjacent light-emitting units;

[0008] a first insulating layer, the first insulating layer being disposed at least below the spacing region;

[0009] A plurality of electrode layers, wherein the plurality of electrode layers are disposed below the first insulating layer, and the electrode layers are configured to electrically connect adjacent light-emitting units;

[0010] The first insulating layer has a reflective effect; or, the first insulating layer is a transparent insulating layer, and at least the electrode layer corresponding to the spacing area below has a reflective effect; or, the first insulating layer and at least the electrode layer corresponding to the spacing area below both have a reflective effect.

[0011] According to another embodiment of the present application, a light-emitting device is provided, including a circuit board and a plurality of light-emitting units arranged on the circuit board, wherein the light-emitting units include the light-emitting diodes described in the present application.

[0012] As described above, the light emitting diode and the light emitting device of the present application have the following beneficial effects:

[0013] The light-emitting diode of the present application includes a plurality of light-emitting units, and there is a spacing area between adjacent light-emitting units. The first insulating layer located below the light-emitting units and below the spacing area has a reflective effect, and / or the electrode layer located below the first insulating layer has a reflective effect. Thus, the light entering the spacing area can be effectively reflected, the light intensity of the spacing area can be increased, the difference in brightness between the light-emitting units can be reduced, and the uniformity of the light emission of the light-emitting diode can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 The diagram shows a top view of the structure of a light emitting diode in the prior art.

[0015] Figure 2 Display as Figure 1 Schematic diagram of the cross-sectional structure along the AA direction.

[0016] Figure 3 Shown is a schematic cross-sectional structure diagram of a light emitting diode provided in Example 1 of the present application.

[0017] Figure 4 Shown is a schematic cross-sectional structure diagram of another light emitting diode provided in the first embodiment of the present application.

[0018] Figure 5 Shown is a schematic cross-sectional structure diagram of a light emitting diode provided in the second embodiment of the present application.

[0019] Figure 6 Shown is a schematic diagram of the cross-sectional structure of a light emitting diode provided in Example 3 of the present application.

[0020] Figure 7Shown is a schematic diagram of the cross-sectional structure of a light emitting diode provided in Example 4 of the present application.

[0021] Figure 8 Shown is a schematic cross-sectional structure diagram of another light emitting diode provided in Example 4 of the present application.

[0022] Fig. 9 Shown is a schematic diagram of the structure of the light-emitting device provided in Example 5 of the present application.

[0023] Component number description

[0024] 10, circuit board; 20, light emitting element; 101, spacing area; 110, first semiconductor layer; 120, active layer; 130, second semiconductor layer; 210, first insulating layer; 220, electrode layer; 221, first electrode layer; 222, second electrode layer; 223, third electrode layer; 230, second insulating layer; 240, bonding layer; 250, substrate; 260, back metal layer; 310, reflective metal layer; 320, electrode connection layer; 330, bridging metal layer; 340, conductive hole; 410, first electrode; 420, second electrode; 500, wavelength conversion layer;

[0025] N1, the first light emitting unit; N2, the second light emitting unit; N3, the third light emitting unit; N4, the fourth light emitting unit. DETAILED DESCRIPTION

[0026] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0027] The present application provides a light emitting diode, comprising:

[0028] A plurality of light-emitting units, wherein the plurality of light-emitting units include a first light-emitting unit to an Nth light-emitting unit, where N is an integer not less than 2; each of the light-emitting units includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence from top to bottom, and a spacing region is provided between adjacent light-emitting units;

[0029] a first insulating layer, the first insulating layer being disposed at least below the spacing region;

[0030] A plurality of electrode layers, wherein the plurality of electrode layers are disposed below the first insulating layer, and the electrode layers are configured to electrically connect adjacent light-emitting units;

[0031] The first insulating layer has a reflective effect; or, the first insulating layer is a transparent insulating layer, and at least the electrode layer corresponding to the spacing area below has a reflective effect; or, the first insulating layer and at least the electrode layer corresponding to the spacing area below both have a reflective effect.

[0032] The light-emitting diode provided in this embodiment can reduce the loss of light in the spacing area by setting the first insulating layer of the corresponding spacing area to have a reflective effect, and / or setting the electrode layer of the corresponding spacing area to have a reflective effect, so that the originally absorbed light can be reflected, thereby increasing the light intensity of the spacing area, reducing dark areas, improving the light uniformity of the light-emitting diode, and improving the overall light brightness.

[0033] In some embodiments, when the first insulating layer has a reflective effect, the reflectivity of the first insulating layer is not less than 80%; when the electrode layer has a reflective effect, the reflectivity of the electrode layer is not less than 80%.

[0034] The light-emitting diode of this embodiment sets the reflectivity of the first insulating layer to not less than 80%, and / or sets the reflectivity of the electrode layer to not less than 80%, which can significantly reduce the loss of light in the spacing area and improve the overall luminous efficiency of the light-emitting diode; at the same time, it can reduce the brightness difference between the spacing area and the light-emitting unit and improve the light uniformity of the light-emitting diode.

[0035] In some embodiments, the first insulating layer is a distributed Bragg reflector layer.

[0036] In the light-emitting diode of the present embodiment, the first insulating layer is configured as a distributed Bragg reflector (i.e., DBR), which has a periodic multilayer film structure and can achieve high reflectivity at a specific wavelength. Such high reflectivity helps to reflect the light originally lost in the spacing area back to the light-emitting area, reduce the dark area, and improve the overall luminous efficiency and luminous uniformity of the light-emitting diode.

[0037] In some embodiments, the width of the spacer region is between 10 μm and 50 μm.

[0038] The light-emitting diode of this embodiment limits the width of the spacing area to the above-mentioned range, which helps to evenly distribute the light in the spacing area, reduce the unevenness of the brightness, and make the entire light-emitting surface more uniform; at the same time, the above-mentioned spacing area range has less light interference and mutual influence between the light-emitting units, which helps to increase the brightness and contrast and improve the overall display effect.

[0039] In some embodiments, the upper surface of the first semiconductor layer in the light-emitting unit is the light-emitting surface, and the lower surface of the second semiconductor layer is at least partially in direct contact with the first insulating layer; the total thickness of the first semiconductor layer, the active layer and the second semiconductor layer is between 5μm and 10μm.

[0040] With the above-mentioned features, the light emitting diode of the present embodiment has a small light emitting angle. If the first insulating layer and / or the electrode layer is not set to a structure with a reflective effect, an obvious dark area will appear in the interval area of ​​the light emitting surface. By setting the first insulating layer and / or the electrode layer to a structure with a reflective effect, the loss of light in the interval area can be effectively reduced, the brightness difference between the interval area and the light emitting unit can be reduced, and the overall brightness and uniformity of the light emitting diode can be improved.

[0041] In some embodiments, the wavelength conversion layer is disposed above the spacing area and / or between the spacing areas by means of a film; the thickness of the wavelength conversion layer is between 30 μm and 300 μm.

[0042] The wavelength conversion layer in the light-emitting diode of the present embodiment can absorb the light emitted by the light-emitting unit and convert it into light of other colors. This conversion can not only improve the color saturation, but also enhance the clarity of the light-emitting contour. Since the wavelength conversion layer is only covered above the spacing area and / or between the spacing areas in the form of a film, the clarity of the light-emitting contour of the light-emitting diode can be improved, thereby improving the display effect. At the same time, by optimizing the thickness of the wavelength conversion layer, the absorption and conversion efficiency of the light emitted by the light-emitting diode can be improved.

[0043] In some embodiments, the number of the electrode layers is the same as the number of the light-emitting units, and the plurality of electrode layers include a first electrode layer to an Nth electrode layer, where N is an integer greater than or equal to 2;

[0044] The first electrode layer is electrically connected to the first electrode and to the first semiconductor layer of the first light emitting unit;

[0045] The i-th electrode layer is electrically connected to the second semiconductor layer of the i-1-th light emitting unit, and is electrically connected to the first semiconductor layer of the i-th light emitting unit, where i is an integer less than or equal to N.

[0046] In this embodiment, a plurality of electrode layers are provided to effectively connect a plurality of light-emitting units in series, thereby ensuring that current passes through each light-emitting unit in sequence.

[0047] In some embodiments, at least one conductive hole is provided in each of the light-emitting units, and the conductive hole penetrates the second semiconductor layer, the active layer, and at least a portion of the first semiconductor layer of the light-emitting unit;

[0048] The first electrode is electrically connected to the first electrode layer through the electrode connection layer, and the first electrode layer is electrically connected to the first semiconductor layer of the first light-emitting unit through the conductive hole;

[0049] The i-th electrode layer is electrically connected to the second semiconductor layer of the i-1-th light-emitting unit through the bridging metal layer, and the i-th electrode layer is electrically connected to the first semiconductor layer of the i-th light-emitting unit through the conductive hole.

[0050] This embodiment facilitates connecting multiple light-emitting units in series by providing conductive holes, electrode connection layers, and bridging metal layers.

[0051] In some embodiments, the lower surface of the second semiconductor layer of each of the light-emitting units is in direct contact with the reflective metal layer, and the first insulating layer is disposed below the reflective metal layer;

[0052] The reflective metal layer below the second semiconductor layer of the Nth light emitting unit covers the outside of the Nth light emitting unit, and the second electrode is electrically connected to the second semiconductor layer of the Nth light emitting unit through the reflective metal layer;

[0053] The reflective metal layer is disposed below the first electrode, and the first electrode is electrically connected to the first semiconductor layer of the first light-emitting unit through the reflective metal layer.

[0054] By setting a reflective metal layer, this embodiment can effectively reflect the light that is not directly emitted from the active layer, redirect the light to the outside, and improve the overall light output efficiency of the light-emitting diode; at the same time, by reflecting the light, the reflective metal layer can increase the brightness of the light-emitting unit, so that the light-emitting diode emits more light at the same power.

[0055] In some embodiments, a second insulating layer is disposed between adjacent electrode layers and on the lower surfaces of the plurality of electrode layers, and the adjacent electrode layers are insulated from each other by the second insulating layer.

[0056] This embodiment provides electrical isolation between electrode layers by setting a second insulating layer, ensuring that no accidental current leakage or short circuit occurs between adjacent electrode layers, thereby guaranteeing the stability and safety of the light-emitting diode; at the same time, the second insulating layer can prevent direct electrical contact between the electrode layer and the circuit board below the insulating layer, avoiding short circuits and ensuring safe operation of the circuit.

[0057] In some embodiments, a substrate is further included, wherein the substrate is connected to a surface of the second insulating layer facing away from the electrode layer through a bonding layer;

[0058] A back metal layer is disposed on a surface of the substrate facing away from the bonding layer.

[0059] The substrate in this embodiment is the supporting structure of the entire light-emitting diode, providing mechanical support and physical basis for the light-emitting diode; the bonding layer is an intermediate layer connecting the substrate and the second insulating layer, and its main function is to ensure a firm bond between the substrate and the second insulating layer; the back metal layer is located on the back of the substrate, which has the performance of improving the heat dissipation of the light-emitting diode, and it can also enhance the mechanical strength of the substrate.

[0060] Another embodiment of the present application provides a light-emitting device, including a circuit board and a plurality of light-emitting units arranged on the circuit board, wherein the light-emitting units include the light-emitting diodes provided in the present application.

[0061] The light-emitting unit in the light-emitting device of this embodiment adopts the light-emitting diode provided by the present application. Since the light-emitting diode provided by the present application sets the first insulating layer of the corresponding spacing area to a structure with a reflective effect, and / or sets the electrode layer of the corresponding spacing area to a structure with a reflective effect, the loss of light in the spacing area can be reduced, so that the light originally absorbed by the internal structure of the light-emitting diode below the spacing area can be reflected, thereby improving the light intensity of the spacing area, reducing the dark area, improving the light uniformity of the light-emitting diode, and improving the overall light brightness of the light-emitting diode.

[0062] The design of a single light emitting diode in the prior art, for example Figure 1 and Figure 2 As shown, it includes a plurality of light-emitting units. Figure 1 There are four light-emitting units shown in the figure, namely, the first light-emitting unit N1, the second light-emitting unit N2, the third light-emitting unit N3 and the fourth light-emitting unit N4. There is a spacing area 101 between adjacent light-emitting units. When illuminating, the light is absorbed by the structure below the spacing area 101, so that the light cannot be directly emitted from the spacing area 101, thereby generating a dark area of ​​light (such as Figure 1 The dark area will lead to uneven light emission, affecting the quality of display or lighting, and will also reduce the effective light emitting area, reduce the overall brightness of the LED, and have an adverse effect on the light source effect of the LED.

[0063] In view of the above defects, the present application provides a light emitting diode and a light emitting device, which are now described in detail through the following embodiments.

[0064] Embodiment 1

[0065] This embodiment provides a light emitting diode, such as Figure 3 and Figure 4 As shown, the light emitting diode includes a plurality of light emitting units, a first insulating layer 210 and a plurality of electrode layers 220 .

[0066] The plurality of light emitting units include a first light emitting unit to an Nth light emitting unit, where N is an integer not less than 2. For example, Figure 3 Where N is 2, including a first light emitting unit N1 and a second light emitting unit N2; Figure 4 The N in the figure is 3, including the first light emitting unit N1, the second light emitting unit N2 and the third light emitting unit N3; the value of N depends on the actual needs and is not specifically limited in this embodiment.

[0067] like Figure 3 and Figure 4 As shown, each light-emitting unit includes a first semiconductor layer 110, an active layer 120, and a second semiconductor layer 130 stacked in sequence from top to bottom, and there is a spacing region 101 between adjacent light-emitting units. If the first semiconductor layer 110 is an N-type semiconductor layer, then the second semiconductor layer 130 is a P-type semiconductor layer. For example, the first semiconductor layer 110 is an N-type semiconductor layer that provides electrons through N-type doping, and the formation of the N-type semiconductor layer can be doped in the semiconductor, such as Si, Ge, Sn, Se, Te, etc.; the second semiconductor layer 130 is a P-type semiconductor layer that provides holes through P-type doping, and the formation of the P-type semiconductor layer can be doped in the semiconductor, such as Mg, Zn, Ca, Sr, Ba, etc. The active layer 120 may be a single quantum well structure or a multiple quantum well (MQWs) structure. The multiple quantum well structure is formed by alternately stacking quantum well layers and quantum barrier layers to form a periodic multilayer structure. The quantum barrier layer has a larger band gap than the quantum well layer. The quantum well layer and the quantum barrier layer may be, for example, a GaN layer, an AlGaN layer, or an AlGaInP layer. In order to improve the luminous efficiency of the active layer 120, the depth of the quantum well, the number of layers of the paired quantum barrier layers and the quantum well layer, the thickness, and / or other characteristics may be changed in the active layer 120.

[0068] The first insulating layer 210 is at least disposed below the spacing region 101 .

[0069] A plurality of electrode layers 220 are disposed below the first insulating layer 210. The electrode layers 220 are used to electrically connect adjacent light-emitting units to achieve series connection of the plurality of light-emitting units. The material of the electrode layers 220 may be, for example, Ag, Au, Al, Cu, etc.

[0070] The first insulating layer 210 has a reflective effect. Figure 3As shown, the light emitted from the active layer 120 in the light-emitting unit N2 is reflected by the first insulating layer 210 under the spacing area 101 and then emitted from the spacing area 101, thereby reducing the absorption and scattering of light inside the light-emitting diode and improving the light extraction efficiency of the spacing area 101; at the same time, the light reflected from the spacing area 101 can increase the brightness of the spacing area 101, reduce the brightness difference between the light-emitting unit and the spacing area 101, improve the light uniformity of the light-emitting diode, and improve the overall light brightness.

[0071] In an optional embodiment, if Figure 3 and Figure 4 As shown, the reflectivity of the first insulating layer 210 is not less than 80%. In this way, the first insulating layer 210 helps to reduce the absorption and scattering of light inside the light-emitting diode, increase the amount of light emitted from the outside of the light-emitting diode, and improve the light extraction efficiency; and after the light emitted from the active layer 120 of the light-emitting unit enters the spacing area 101, most of the light is reflected by the first insulating layer 210 and emitted from the spacing area 101 to the outside, thereby improving the brightness of the spacing area 101, reducing the brightness difference between the spacing area 101 and the light-emitting unit, and helping to improve the light uniformity of the light-emitting diode. The reflectivity test can be performed by using glass sheet coating to test the reflectivity of light at a wavelength of 400nm to 500nm, and the reflectivity is not less than 80%.

[0072] In an optional embodiment, if Figure 3 and Figure 4 As shown, the first insulating layer 210 is a distributed Bragg reflector. The distributed Bragg reflector (DBR) is composed of alternating stacks of high-refractive index and low-refractive index materials of different logarithms. This periodic structure can enhance the reflectivity of light of a specific wavelength. The reflectivity of the distributed Bragg reflector depends on the logarithm of the composition, the boundary conditions, and the refractive index difference. The material of the first insulating layer 210 can be, for example, SiO2, TiO2, etc. In this embodiment, the first insulating layer 210 is set as a distributed Bragg reflector, and most of the light entering the spacing area 101 from the active layer 120 is reflected by the distributed Bragg reflector and then emitted from the spacing area 101, which significantly improves the brightness and light extraction efficiency of the spacing area 101.

[0073] In an optional embodiment, if Figure 3 and Figure 4As shown, the width T of the spacing region 101 is between 10μm and 50μm. The width T is conducive to reducing the mutual influence between the light-emitting units, such as the current crowding effect, thereby improving the luminous efficiency of each light-emitting unit; at the same time, it can also provide a better heat dissipation path, which helps to dissipate the heat generated by the light-emitting diode when it is working, and improve the thermal stability and reliability of the light-emitting diode. Optionally, the width T of the spacing region 101 can be, for example, 10μm, 15μm, 20μm, 25μm, 30μm, 35μm, 40μm, 45μm, 50μm, etc.

[0074] In an optional embodiment, the upper surface of the first semiconductor layer 110 in the light-emitting unit is the light-emitting surface, and the lower surface of the second semiconductor layer 130 is at least partially in direct contact with the first insulating layer 210. The first insulating layer 210 can prevent a short circuit from occurring inside the light-emitting diode by isolating the active area (including the first semiconductor layer 110, the active layer 120 and the second semiconductor layer 130) from the conductive layer below; the total thickness of the first semiconductor layer 110, the active layer 120 and the second semiconductor layer 130 is between 5 μm and 10 μm, for example, the total thickness can be 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, etc. The light-emitting diode of the present embodiment can achieve the effect of a smaller light-emitting angle by setting the above-mentioned features. If a structural layer with a reflective effect is not set below the spacing area 101, a very obvious dark area will appear in the spacing area 101 on its light-emitting surface. Setting the spacing area 101 as a structure with a reflective effect can effectively reduce the loss of light in the spacing area 101, reduce the brightness difference between the spacing area 101 and the light-emitting unit, and improve the overall brightness and overall uniformity of the light-emitting diode.

[0075] In an optional embodiment, the first electrode 410 is electrically connected to the first light-emitting unit N1; the second electrode 420 is electrically connected to the Nth light-emitting unit; the first electrode 410 and the second electrode 420 have opposite polarities and are electrically connected to different light-emitting units, respectively, to form a series structure of multiple light-emitting units in a light-emitting diode. If the first electrode 410 is an N electrode, the second electrode 420 is a P electrode. For example, the first electrode 410 is an N electrode, and its material can be Al, Ag, Cr, Pt, TiW, etc.; the second electrode 420 is a P electrode, and its material can be Ti, Pt, Ni, Au, Sn, etc.

[0076] The number of electrode layers 220 is the same as the number of light-emitting units, and the multiple electrode layers 220 include a first electrode layer 221 to an N-th electrode layer, where N is an integer greater than or equal to 2; the first electrode layer 221 is electrically connected to the first electrode 410, and the first electrode layer 221 is electrically connected to the first semiconductor layer 110 of the first light-emitting unit N1; the i-th electrode layer is electrically connected to the second semiconductor layer 130 of the i-1-th light-emitting unit, and the i-th electrode layer is electrically connected to the first semiconductor layer 110 of the i-th light-emitting unit, where i is an integer less than or equal to N.

[0077] In an optional embodiment, at least one conductive hole 340 is provided in each light-emitting unit, and the conductive hole 340 penetrates the second semiconductor layer 130, the active layer 120, and at least a portion of the first semiconductor layer 110 of the light-emitting unit; the first electrode 410 is electrically connected to the first electrode layer 221 through the electrode connecting layer 320, and the first electrode layer 221 is electrically connected to the first semiconductor layer 110 of the first light-emitting unit N1 through the conductive hole 340; the i-th electrode layer is electrically connected to the second semiconductor layer 130 of the i-1-th light-emitting unit through the bridging metal layer 330, and the i-th electrode layer is electrically connected to the first semiconductor layer 110 of the i-th light-emitting unit through the conductive hole 340. The electrode connection layer 320 and the bridging metal layer 330 are located on the same layer as the first insulating layer 210, and the electrode connection layer 320 and the bridging metal layer 330 are isolated from each other by the first insulating layer 210 to achieve mutual insulation. At the same time, the electrode connection layer 320 and the bridging metal layer 330 are used to electrically connect the first electrode 410 to the light-emitting unit, and to connect the light-emitting units in series, and their materials may be the same or different.

[0078] like Figure 3 As shown, N is 2, that is Figure 3 The light-emitting diode comprises a first light-emitting unit N1, a second light-emitting unit N2, a first electrode layer 221 and a second electrode layer 222; the first electrode layer 221 is electrically connected to the first electrode 410 through the electrode connecting layer 320, and the first electrode layer 221 is electrically connected to the first semiconductor layer 110 of the first light-emitting unit N1 through the conductive hole 340 in the first light-emitting unit N1; the second electrode layer 222 is electrically connected to the second semiconductor layer 130 of the first light-emitting unit N1 through the bridging metal layer 330, and the second electrode layer 222 is electrically connected to the first semiconductor layer 110 of the second light-emitting unit N2 through the conductive hole 340 in the second light-emitting unit N2, so as to realize the series connection of the first light-emitting unit N1 and the second light-emitting unit N2.

[0079] like Figure 4 As shown, N is 3, that is Figure 4The light emitting diode comprises a first light emitting unit N1, a second light emitting unit N2, a third light emitting unit N3, a first electrode layer 221, a second electrode layer 222 and a third electrode layer 223; the first electrode layer 221 is electrically connected to the first electrode 410 through the electrode connecting layer 320, and the first electrode layer 221 is electrically connected to the first semiconductor layer 110 of the first light emitting unit N1 through the conductive hole 340 in the first light emitting unit N1; the second electrode layer 222 is electrically connected to the second semiconductor layer 130 of the first light emitting unit N1 through the bridge metal layer 33 0, and the second electrode layer 222 is electrically connected to the first semiconductor layer 110 of the second light-emitting unit N2 through the conductive hole 340 in the second light-emitting unit N2; the third electrode layer 223 is electrically connected to the second semiconductor layer 130 of the second light-emitting unit N2 through the bridging metal layer 330, and the third electrode layer 223 is electrically connected to the first semiconductor layer 110 of the third light-emitting unit N3 through the conductive hole 340 in the third light-emitting unit N3, so as to realize the series connection of the first light-emitting unit N1, the second light-emitting unit N2 and the third light-emitting unit N3.

[0080] In an optional embodiment, if Figure 3 and Figure 4 As shown, the lower surface of the second semiconductor layer 130 of each light-emitting unit is in direct contact with the reflective metal layer 310. The reflective metal layer 310 is used to reflect the light radiated toward the second semiconductor layer 130 in the light-emitting unit back into the light-emitting unit and radiate it from the light-emitting side of the light-emitting unit, thereby improving the light-emitting brightness of the light-emitting unit. The reflective metal layer 310 can be composed of Ag and other metal materials. The other metal materials can be, for example, Ti, Pt, Ti-W alloy, etc. The reflective metal layer 310 below the second semiconductor layer 130 of the Nth light-emitting unit covers the outside of the Nth light-emitting unit. The second electrode 420 is electrically connected to the second semiconductor layer 130 of the Nth light-emitting unit through the reflective metal layer 310. At the same time, the reflective metal layer 310 is also provided below the first electrode 410. The first electrode 410 is electrically connected to the first semiconductor layer 110 of the first light-emitting unit N1 through the reflective metal layer 310, the electrode connection layer 320, the first electrode layer 221, and the conductive hole 340 of the first light-emitting unit N1. The first insulating layer 210 is disposed below the reflective metal layer 310 to achieve vertical light emission of the light emitting unit in the light emitting diode.

[0081] In an optional embodiment, if Figure 3 and Figure 4 As shown, a second insulating layer 230 is disposed between the plurality of electrode layers 220 and on the lower surfaces of the plurality of electrode layers 220, and adjacent electrode layers 220 are insulated from each other by the second insulating layer 230, that is, there is a certain gap between adjacent electrode layers 220, and the gap is filled with the second insulating layer 230. The material of the second insulating layer 230 can be, for example, SiO2, SiN, SiO x Ny , at least one of TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO2, TaO2 or MgF2.

[0082] In an optional embodiment, if Figure 3 and Figure 4 As shown, a substrate 250 is disposed below the second insulating layer 230. The substrate 250 provides mechanical support for the light-emitting diode and also has certain thermal conductivity to meet the heat dissipation requirements of the light-emitting diode. The substrate 250 can be a conductive substrate or a non-conductive substrate. The conductive substrate can be made of, for example, silicon, silicon carbide or metal. The metal can be, for example, one or more of copper, tungsten and molybdenum. The non-conductive substrate can be, for example, a ceramic substrate, a resin substrate, etc.

[0083] The substrate 250 is bonded to the second insulating layer 230 via a bonding layer 340. The bonding layer 340 may be made of a variety of different materials, the specific selection of which depends on the required electrical properties, thermal stability, chemical stability, mechanical strength, and process compatibility. The material of the bonding layer 340 may be, for example, a metal material, a polymer material, a ceramic material, and the like.

[0084] A back metal layer 260 is disposed below the substrate 250. The back metal layer 260 has the functions of providing mechanical support, enhancing heat dissipation performance, shielding electromagnetic interference, providing a ground plane, etc. The material of the back metal layer 260 can be, for example, copper, aluminum, silver, gold, silicon, or a metal composite material.

[0085] In an optional embodiment, if Figure 3 and Figure 4 As shown, the surface of the first semiconductor layer 110 in the light-emitting unit facing away from the active layer 120 is provided with a rough surface (not marked in the figure), that is, the top of the first semiconductor layer 110 of the light-emitting unit is provided with a rough surface, which is beneficial to the light emitting effect of the light-emitting unit.

[0086] Embodiment 2

[0087] This embodiment also provides a light emitting diode, such as Figure 5 As shown, the light emitting diode of this embodiment also includes a plurality of light emitting units, a first insulating layer 210 and a plurality of electrode layers 220. The difference from the first embodiment is that:

[0088] The first insulating layer 210 is a transparent insulating layer, and has a reflective effect on at least the electrode layer 220 below the corresponding spacing area. Figure 5As shown, after the light emitted from the active layer 120 in the light-emitting unit enters the spacing area 101, it passes through the first insulating layer 210 and is reflected by the electrode layer 220, and then passes through the first insulating layer 210 again and is emitted from the spacing area 101 to the outside. In this embodiment, at least the electrode layer 220 corresponding to the bottom of the spacing area is set to have a reflective effect, which can improve the light extraction efficiency of the spacing area 101, increase the brightness of the spacing area 101, reduce the brightness difference between the light-emitting unit and the spacing area 101, improve the light uniformity of the light-emitting diode, and improve the overall light brightness. It can be understood that in actual production, in order to simplify the process, the entire electrode layer 220 can also be set to a structure with a reflective effect.

[0089] Figure 5 where N is 2, Figure 5 The value of N is to illustrate the connection relationship between the electrode layer 220 and the light-emitting unit. In actual production, the value of N depends on actual production needs. This embodiment does not limit the specific value of N. The following figures involving the value of N have the same limitation and will not be repeated.

[0090] The material of the electrode layer 220 can be silver, aluminum, or a combination of silver and other metals. The first insulating layer 210 is a transparent insulating layer, and its material can be, for example, SiO2, SiN, SiO x N y , at least one of TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO2, TaO2 or MgF2.

[0091] In an optional embodiment, the reflectivity of the electrode layer 220 is not less than 80%, and the electrode layer 220 helps to reduce the absorption and scattering of light inside the light-emitting diode, increase the amount of light emitted from the outside of the light-emitting diode, and improve the light extraction efficiency of the spacing region 101; and after the light emitted from the active layer 120 of the light-emitting unit enters the spacing region 101 and the first insulating layer 210 in turn, most of the light enters the spacing region 101 from the first insulating layer 210 after being reflected by the electrode layer 220 and is emitted to the outside, thereby improving the brightness of the spacing region 101, reducing the brightness difference between the spacing region 101 and the light-emitting unit, and helping to improve the light emission uniformity of the light-emitting diode.

[0092] Embodiment 3

[0093] This embodiment also provides a light emitting diode, such as Figure 6 As shown, the light emitting diode of this embodiment also includes a plurality of light emitting units, a first insulating layer 210 and a plurality of electrode layers 220. The difference from the first embodiment or the second embodiment is that:

[0094] like Figure 6As shown, the first insulating layer 210 and at least the electrode layer 220 corresponding to the spacing area have a reflective effect. In this way, after the light emitted from the active layer 120 of the light-emitting unit enters the spacing area 101, after being reflected by the first insulating layer 210 and the electrode layer 220, all the light can basically be emitted from the spacing area 101 to the outside, the brightness of the spacing area 101 can be significantly enhanced, and the brightness of the light-emitting unit and the spacing area is relatively small, which helps to improve the uniformity of the light emission of the light-emitting diode and improve the overall light emission brightness of the light-emitting diode.

[0095] Embodiment 4

[0096] This embodiment also provides a light emitting diode, such as Figure 7 and Figure 8 As shown, the light emitting diode of this embodiment also includes a plurality of light emitting units, a first insulating layer 210 and a plurality of electrode layers 220. The difference from the first to third embodiments is that:

[0097] like Figure 7 and Figure 8 As shown, the wavelength conversion layer 500 is disposed above the spacing area 101, or between the spacing areas 101, or above the spacing area 101 and between the spacing areas 101 by film pasting; the thickness of the wavelength conversion layer 500 is between 30μm and 300μm. The wavelength conversion layer 500 is used to convert the original wavelength of light emitted by the light-emitting unit into another wavelength of light actually required to achieve effects such as white light LED or full-color display. This conversion can not only improve the saturation of the color, but also enhance the clarity of the light-emitting contour. Since the wavelength conversion layer 500 is only disposed above the spacing area 101 and / or between the spacing areas 101, and the thickness of the wavelength conversion layer 500 is set appropriately, the clarity of the light-emitting contour of the light-emitting diode can be improved, the display effect can be improved, and the absorption rate and conversion efficiency of the light-emitting diode can be improved. At the same time, the first insulating layer 210 is set to have a reflective effect, and / or the electrode layer 220 is set to have a reflective effect. In this way, the light emitted by the light-emitting unit will not be absorbed by the light-absorbing material inside the light-emitting diode after being converted by the wavelength conversion layer 500 and then entering the spacing area 101, and will not cause light loss. In the light field distribution, the light intensity of the spacing area 101 will not differ significantly from the light intensity of the light-emitting unit, and no dark area will be formed in the spacing area 101.

[0098] Embodiment 5

[0099] This embodiment provides a light emitting device, such as Fig. 9As shown, it includes a circuit board 10 and a plurality of light-emitting units 20 arranged on the circuit board 10, and the light-emitting units 20 include the light-emitting diodes provided in embodiments 1 to 4. The light-emitting diodes of embodiments 1 to 4 include a plurality of light-emitting units, a first insulating layer 210 and a plurality of electrode layers 220, and at least the first insulating layer 210 corresponding to the spacer region 101 below has a reflective effect, and / or at least the electrode layer 220 corresponding to the spacer region 101 below has a reflective effect, so that the light in the spacer region 101 is reflected by the first insulating layer 210 and / or the electrode layer 220, and then emitted from the spacer region 101 to the outside, reducing the absorption and scattering of light inside the light-emitting diode, and improving the light extraction efficiency of the spacer region 101; at the same time, the light emitted from the spacer region 101 can increase the brightness of the spacer region 101, reduce the brightness difference between the light-emitting unit and the spacer region 101, improve the uniformity of the light-emitting diode, and improve the overall brightness of the light-emitting diode. In this way, the dark area of ​​the light-emitting device can be reduced, the uniformity of the light-emitting device can be improved, and the brightness of the light-emitting device can be improved.

[0100] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A light emitting diode, characterized in that: include: A plurality of light-emitting units, wherein the plurality of light-emitting units include a first light-emitting unit to an Nth light-emitting unit, where N is an integer not less than 2; each of the light-emitting units includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially from top to bottom. A body layer, with spacing areas between adjacent light-emitting units; a first insulating layer, the first insulating layer being disposed at least below the spacing region; A plurality of electrode layers, wherein the plurality of electrode layers are arranged below the first insulating layer, and the electrode layers are arranged to connect the phase The adjacent light emitting unit is electrically connected; Wherein, the first insulating layer has a reflective effect; or, the first insulating layer is a transparent insulating layer, at least The electrode layer below the corresponding spacing area has a reflective effect; or, the first insulating layer and at least the electrode layer below the corresponding spacing area both have a reflective effect.

2. The light emitting diode according to claim 1, characterized in that: When the first insulating layer has a reflective effect, the reflectivity of the first insulating layer is not less than 80%; when the electrode layer has a reflective effect, the reflectivity of the electrode layer is not less than 80%.

3. The light emitting diode according to claim 1, characterized in that: When the first insulating layer has a reflective effect, the first insulating layer is a distributed Bragg reflector.

4. The light emitting diode according to claim 1, characterized in that: The width of the spacer region is between 10 μm and 50 μm.

5. The light emitting diode according to claim 1, characterized in that: The upper surface of the first semiconductor layer in the light-emitting unit is a light-emitting surface, and the lower surface of the second semiconductor layer is at least partially in direct contact with the first insulating layer; the total thickness of the first semiconductor layer, the active layer and the second semiconductor layer is between 5 μm and 10 μm.

6. The light emitting diode according to any one of claims 1 to 5, characterized in that: The wavelength conversion layer is disposed above the spacing area and / or between the spacing areas by film sticking; The thickness of the wavelength conversion layer is between 30 μm and 300 μm.

7. The light emitting diode according to claim 1, characterized in that: The number of the electrode layers is the same as the number of the light-emitting units, and the plurality of electrode layers include a first electrode layer to an Nth electrode layer, where N is an integer greater than or equal to 2; The first electrode layer is electrically connected to the first electrode and to the first semiconductor layer of the first light-emitting unit; the i-th electrode layer is electrically connected to the second semiconductor layer of the i-1-th light-emitting unit and to the first semiconductor layer of the i-th light-emitting unit, where i is an integer less than or equal to N.

8. The light emitting diode according to claim 7, characterized in that: At least one conductive hole is provided in each of the light-emitting units, and the conductive hole penetrates the second semiconductor layer, the active layer, and at least a part of the first semiconductor layer of the light-emitting unit; The first electrode is electrically connected to the first electrode layer through the electrode connection layer, and the first electrode layer is electrically connected to the first semiconductor layer of the first light-emitting unit through the conductive hole; The i-th electrode layer is electrically connected to the second semiconductor layer of the i-1-th light-emitting unit through the bridging metal layer, and the i-th electrode layer is electrically connected to the first semiconductor layer of the i-th light-emitting unit through the conductive hole.

9. The light emitting diode according to claim 1, characterized in that: The lower surface of the second semiconductor layer of each of the light-emitting units is in direct contact with the reflective metal layer, and the first insulating layer is disposed below the reflective metal layer; The reflective metal layer below the second semiconductor layer of the Nth light emitting unit covers the Nth light emitting unit. The reflective metal layer is arranged below the first electrode, and the first electrode is electrically connected to the first semiconductor layer of the first light-emitting unit through the reflective metal layer.

10. The light emitting diode according to claim 1, characterized in that: A second insulating layer is provided between adjacent electrode layers so as to be insulated from each other by the second insulating layer; The second insulating layer is disposed on the lower surfaces of the plurality of electrode layers.

11. The light emitting diode according to claim 10, characterized in that: It also includes a substrate, wherein the substrate is connected to a surface of the second insulating layer facing away from the electrode layer through a bonding layer; A back metal layer is disposed on a surface of the substrate facing away from the bonding layer.

12. A light emitting device, characterized in that: It comprises a circuit board and a plurality of light-emitting units arranged on the circuit board, wherein the light-emitting units comprise the light-emitting diodes according to any one of claims 1 to 11.

Images