Light emitting device and electronic device including the same

Abstract

The invention discloses a light-emitting device and electronic equipment comprising the light-emitting device, and the light-emitting device comprises an anode and a cathode which are oppositely arranged, a light-emitting layer arranged between the anode and the cathode, and a first hole function layer arranged between the anode and the light-emitting layer, the material of the first hole functional layer comprises a first hole functional material and a first inorganic filler, the thermal expansion coefficient of the first inorganic filler is lower than that of the first hole functional material, and / or the material of the light-emitting layer comprises a light-emitting material and a second inorganic filler, the thermal expansion coefficient of the second inorganic filler is lower than that of the light-emitting material, so that the light-emitting efficiency and the service life of the light-emitting device in a high-temperature environment are improved; the electronic equipment comprises the light-emitting device, and the display effect, the service life and the performance stability of the electronic equipment are improved.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to a light-emitting device and an electronic device including the light-emitting device. Background Art

[0002] A light-emitting device refers to a type of device that emits light through the injection and recombination of carriers, including but not limited to organic light-emitting diodes (OLED) and quantum dot light-emitting diodes (QLED). A light-emitting device has a "sandwich" structure, that is, it includes an anode, a cathode, and a light-emitting layer, wherein the anode and the cathode are arranged opposite to each other, and the light-emitting layer is arranged between the anode and the cathode. The light-emitting principle of a light-emitting device is: electrons are injected from the cathode of the device into the light-emitting area, holes are injected from the anode of the device into the light-emitting area, and electrons and holes recombine in the light-emitting area to form excitons, and the recombined excitons release photons in the form of radiation transition, thereby emitting light.

[0003] After years of development, light-emitting devices have made great progress in performance indicators and have shown great potential for application development. However, there are still some shortcomings, such as the device life of light-emitting devices needs to be further improved. Therefore, how to further improve the device life of light-emitting devices is of great significance to the application and development of light-emitting devices. Summary of the invention

[0004] The present application provides a light-emitting device and an electronic device including the light-emitting device, so as to improve the device life of the light-emitting device.

[0005] In a first aspect, an embodiment of the present application provides a light emitting device, including:

[0006] An anode and a cathode arranged opposite to each other;

[0007] a light-emitting layer disposed between the anode and the cathode; and

[0008] A first hole functional layer is disposed between the anode and the light-emitting layer;

[0009] Among them, the material of the first hole functional layer includes a first hole functional material and a first inorganic filler, and the thermal expansion coefficient of the first inorganic filler is lower than the thermal expansion coefficient of the first hole functional material; and / or, the material of the light-emitting layer includes a light-emitting material and a second inorganic filler, and the thermal expansion coefficient of the second inorganic filler is lower than the thermal expansion coefficient of the light-emitting material.

[0010] Optionally, the first inorganic filler is selected from one or more of chromium oxide green, aluminum titanate and glass fiber; and / or

[0011] The second inorganic filler is selected from one or more of chromium oxide green, aluminum titanate and glass fiber.

[0012] Optionally, the material of the first hole functional layer comprises a first hole functional material and a first inorganic filler, and the mass ratio of the first hole functional material to the first inorganic filler is 1:(0.1-0.5); and / or

[0013] The first hole functional material comprises 3-hexyl substituted polythiophene, poly(9-vinyl carbazole), 4,4'-di(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)aniline)] )diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)], 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tri(carbazol-9-yl)triphenylamine, 4,4',4'-tri(2-naphthylphenylamino)triphenylamine triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N' -diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and one or more of 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene.

[0014] Optionally, the light-emitting device also includes a second hole functional layer, which is arranged between the anode and the first hole functional layer, and the material of the second hole functional layer includes one or more of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, phthalocyanine titanium oxide, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polyaniline, polypyrrole, MoO3, WO3, CrO3, CuO, Cu2O, CuS, MoS2 and WS2.

[0015] Optionally, the material of the light-emitting layer comprises a light-emitting material and a second inorganic filler, and the mass ratio of the light-emitting material to the second inorganic filler is 1:(0.1-0.5); and / or

[0016] The luminescent material comprises one or more of an organic luminescent material and quantum dots;

[0017] The organic light-emitting material is selected from one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diarylanthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or the quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots;The material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot and the material of the shell of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe , HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs , GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb The group IV-VI compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the group I-III-VI compound is selected from one or more of CuInS, CuInSe and AgInS; and / or the general structural formula of the inorganic perovskite quantum dots is AMX3, wherein A is Cs; + ion, M is a divalent metal cation, M is selected from Pb 2 + Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; and / or, the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; and / or, the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, B is selected from an organic amine cation.

[0018] Optionally, the light-emitting device further comprises an electronic functional layer, wherein the electronic functional layer is disposed between the cathode and the light-emitting layer, and a material of the electronic functional layer comprises a doped or non-doped inorganic compound;

[0019] Wherein, the undoped inorganic compound is selected from one or more of a first metal oxide, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material and an IB-IIIA-VIA semiconductor material, the first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2, and / or the IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe and CdS, and / or the IIIA-VA semiconductor material is selected from one or more of InP and GaP, and / or the IB-IIIA-VIA semiconductor material is selected from one or more of CuInS and CuGaS; and / or the doping element in the doped inorganic compound is selected from one or more of magnesium, calcium, zirconium, tungsten, gallium, lithium, aluminum, titanium, yttrium, indium and tin; and / or

[0020] The materials of the anode and the cathode are independently selected from one or more of metals, carbon materials and second metal oxides; wherein the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg, and / or the carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and / or the second metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO and In2O3.

[0021] Optionally, the light-emitting device further comprises a third hole functional layer, wherein the third hole functional layer is arranged between the first hole functional layer and the light-emitting layer; wherein the material of the third hole functional layer is a P-type semiconductor material.

[0022] Optionally, the P-type semiconductor material is selected from one or more of NiO, Cr2O3, CoO and MnO; and / or

[0023] The thermal expansion coefficient of the P-type semiconductor material is less than 1×10 -4 K -1 .

[0024] Optionally, the thickness of the third hole functional layer is 10 nm to 30 nm.

[0025] In a second aspect, the present application further provides an electronic device, comprising a light-emitting device as described in any one of the first aspects.

[0026] The present application provides a light emitting device and an electronic device including the light emitting device, which have the following technical effects:

[0027] In the light-emitting device, the first hole functional layer is doped with a first inorganic filler to reduce the thermal expansion coefficient of the first hole functional layer, thereby reducing the degree of thermal deformation of the first hole functional layer, and / or the light-emitting layer is doped with a second inorganic filler to reduce the thermal expansion coefficient of the light-emitting layer, thereby reducing the degree of thermal deformation of the light-emitting layer, thereby improving the "inter-embedding" phenomenon between the first hole functional layer and the light-emitting layer in a high-temperature environment, thereby improving the luminous efficiency and device life of the light-emitting device in a high-temperature environment, and helping to improve the performance stability of the light-emitting device.

[0028] The electronic device includes the light-emitting device, which is beneficial to improving the display effect, service life and performance stability of the electronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0030] Figure 1 A schematic diagram of the structure of a first light-emitting device provided in an embodiment of the present application;

[0031] Figure 2 A schematic diagram of the structure of a second light-emitting device provided in an embodiment of the present application.

[0032] The reference numerals are as follows:

[0033] 10: light emitting device, 11: anode, 12: cathode, 13: light emitting layer, 14: hole functional layer, 15: electron functional layer, 141: first hole functional layer, 142: second hole functional layer, 143: third hole functional layer. DETAILED DESCRIPTION

[0034] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0035] Unless otherwise defined, all professional and scientific terms used herein have the same meanings as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to those described herein may be applied to the present invention. The preferred implementation methods and materials described herein are for demonstration purposes only and are not intended to limit the content of this application.

[0036] It should be noted that the description order of the following embodiments is not intended to limit the preferred order of the embodiments. The various embodiments of the present application may be presented in the form of a range. It should be understood that the description in the form of a range is only for convenience and simplicity and should not be understood as a rigid limitation on the scope of the present invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated in this article, it is meant to include any cited numbers (fractions or integers) within the indicated range.

[0037] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the light-emitting device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the light-emitting device. The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0038] The term "including" means "including but not limited to".

[0039] The term "and / or" is used to describe the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0040] The term "at least one" refers to one or more, and "more than one" refers to two or more. The term "at least one", "the following at least one" or similar expressions refer to any combination of these items, including any combination of a single or multiple. For example, "at least one of a, b or c" or "at least one of a, b and c" can be expressed as: a, b, c, ab (i.e. a and b), ac, bc or abc, where a, b and c can be single or multiple, respectively.

[0041] In the present application, “layer A is formed on one side of layer B”, “layer A is formed on the side of layer B away from layer C” or similar descriptions can be expressed as layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B, or as layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other spacing structure layers can be formed between layer A and layer B. Similarly, “layer A is arranged on one side of layer B”, “layer A is arranged on the side of layer B away from layer C” can be expressed as layer A is in direct contact with layer B, or as other spacing structure layers are arranged between layer A and layer B; “layer A is arranged between layer B and layer C” can be expressed as layer A is in direct contact with layer B and layer A is in direct contact with layer C, or layer A is in direct contact with layer B and one or more spacing structure layers are arranged between layer A and layer C, or one or more spacing structure layers are arranged between layer A and layer B and one or more spacing structure layers are arranged between layer A and layer C, or one or more spacing structure layers are arranged between layer A and layer B and layer A is in direct contact with layer C.

[0042] The applicant has found that in a light-emitting device, the material of the light-emitting layer and the material of the hole functional layer (such as the hole transport layer) adjacent to the light-emitting layer have a high thermal expansion coefficient, especially the hole functional layer. The material of the hole functional layer is mostly an organic compound. Therefore, in a high temperature environment (such as not less than 120°C), the light-emitting layer and the hole functional layer are very easy to deform, and the hole functional layer and the light-emitting layer may be embedded in each other due to thermal deformation, resulting in damage to the light-emitting layer and the hole functional layer, thereby seriously damaging the performance of the light-emitting device and causing a sharp drop in luminous efficiency and device life.

[0043] Based on this, the embodiment of the present application provides a light emitting device, which can be a positive structure or an inverted structure, such as Figure 1As shown, the light emitting device 10 includes an anode 11, a cathode 12, a light emitting layer 13 and a first hole functional layer 141, wherein the anode 11 and the cathode 12 are arranged opposite to each other, the light emitting layer 13 is arranged between the anode 11 and the cathode 12, and the first hole functional layer 141 is arranged between the anode 11 and the light emitting layer 13. The material of the first hole functional layer 141 includes a first hole functional material and a first inorganic filler, and the thermal expansion coefficient of the first inorganic filler is lower than the thermal expansion coefficient of the first hole functional material; and / or the material of the light emitting layer includes a light emitting material and a second inorganic filler, and the thermal expansion coefficient of the second inorganic filler is lower than the thermal expansion coefficient of the light emitting material.

[0044] In the light-emitting device 10 of the embodiment of the present application, a first inorganic filler is doped into the first hole functional layer 141 to reduce the thermal expansion coefficient of the first hole functional layer 141, thereby reducing the degree of thermal deformation of the first hole functional layer 141, and / or a second inorganic filler is doped into the light-emitting layer 13 to reduce the thermal expansion coefficient of the light-emitting layer 13, thereby reducing the degree of thermal deformation of the light-emitting layer 13, thereby improving the "inter-embedding" phenomenon between the first hole functional layer 141 and the light-emitting layer 13 in a high temperature environment, thereby improving the luminous efficiency and device life of the light-emitting device 10 in a high temperature environment, and helping to improve the performance stability of the light-emitting device 10.

[0045] In some embodiments of the present application, the thickness of the first hole function layer 141 is 10 nm to 100 nm.

[0046] In order to further reduce the thermal expansion coefficient of the first hole function layer 141 , in some embodiments of the present application, the first inorganic filler is selected from one or more of chromium oxide green, aluminum titanate and glass fiber.

[0047] In order to reduce the thermal expansion coefficient of the first hole functional layer 141 and ensure that the first hole functional layer 141 has a good hole injection level, in some embodiments of the present application, the material of the first hole functional layer 141 includes a first hole functional material and a first inorganic filler, and the mass ratio of the first hole functional material to the first inorganic filler is 1:(0.1~0.5), for example, 1:0.1, 1:0.2, 1:0.3, 1:0.4, 1:0.5 or a value between any two of the aforementioned ratios.

[0048] In some embodiments of the present application, the first hole functional layer 141 is a hole transport layer, and correspondingly, the first hole functional material is a hole transport material, and the first hole functional material includes 3-hexyl substituted polythiophene (CAS No. 104934-50-1), poly (9-vinyl carbazole) (abbreviated as PVK, CAS No. 25067-59-8), 4,4'-di (9-carbazole) biphenyl (abbreviated as CBP, CAS No. 58328-31-7), poly [bis (4-phenyl) (4-butylphenyl) amine], 4,4'-cyclohexyl bis [N, N-di (4-methylphenyl) aniline] (abbreviated as TAPC, CAS No. 58473-78-2), poly [(9,9-di Octylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (abbreviated as TFB, CAS No. 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)] (CAS No. 223569-31-1), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), 4,4',4"-tris(carbazol-9-yl)triphenylamine (abbreviated as TCTA, CAS No. 139092-78-7), 4, 4',4'-Tris(2-naphthylphenylamino)triphenylamine (CAS No. 185690-41-9), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as NPB, CAS No. 123847-85-8), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as TPD, CAS No. 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl- One or more of 9,9-spirobifluorene-2,7-diamine (referred to as Spiro-TPD, CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (referred to as PTTA, CAS No. 1333317-99-9) and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (referred to as spiro-omeTAD, CAS No. 207739-72-8).

[0049] In order to further reduce the hole injection barrier, thereby further improving the hole injection level of the light emitting device 10, in some embodiments of the present application, continue to refer to Figure 1 The light emitting device 10 further includes a second hole functional layer 142, which is disposed between the anode 11 and the first hole functional layer 141. The second hole functional layer 142 may be a hole injection layer, and the material of the second hole functional layer 142 includes poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (abbreviated as PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium phthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone ( CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (CAS No. 105598-27-4), polyaniline (CAS No. 25233-30-1), polypyrrole (CAS No. 30604-81-0), MoO3, WO3, CrO3, CuO, Cu2O, CuS, MoS2 and WS2. The thickness of the second hole function layer 142 is, for example, 10nm to 100nm.

[0050] In some embodiments of the present application, the thickness of the light emitting layer 13 is 10 nm to 100 nm.

[0051] In order to further reduce the thermal expansion coefficient of the light-emitting layer 13 , in some embodiments of the present application, the second inorganic filler is selected from one or more of chromium oxide green, aluminum titanate and glass fiber.

[0052] In order to reduce the thermal expansion coefficient of the light-emitting layer 13 and ensure that the light-emitting layer 13 has good light-emitting properties, in some embodiments of the present application, the material of the light-emitting layer 13 includes a light-emitting material and a second inorganic filler, and the mass ratio of the light-emitting material to the second inorganic filler is 1:(0.1-0.5), for example, 1:0.1, 1:0.2, 1:0.3, 1:0.4, 1:0.5 or a value between any two of the aforementioned ratios.

[0053] In some embodiments of the present application, the luminescent material comprises one or more of an organic luminescent material and a quantum dot. Among them, the organic luminescent material includes, but is not limited to, 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, exciplex luminescent materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives. One or more of them.

[0054] The quantum dots include, but are not limited to, one or more of red quantum dots, green quantum dots, and blue quantum dots, and the quantum dots include, but are not limited to, one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots. The average particle size of the quantum dots can be 2nm to 20nm, for example, 2nm, 4nm, 6nm, 8nm, 10nm, 12nm, 15nm, 20nm, or a value between any two of the foregoing values.

[0055] For single-component quantum dots and core-shell structure quantum dots, the material of the single-component quantum dots, the material of the core of the core-shell structure quantum dots or the material of the shell of the core-shell structure quantum dots is, but is not limited to, at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn One or more of CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, Al As, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, I nPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNA s, InAlNSb, InAlPAs and InAlPSb, the IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS. It should be noted that for the material of the aforementioned single-component quantum dots, or the material of the core of the core-shell structure quantum dots, or the material of the shell of the core-shell structure quantum dots, the chemical formula provided only indicates the elemental composition, and does not indicate the content of each element. For example: CdZnSe only indicates that it is composed of three elements: Cd, Zn and Se. If the content of each element is indicated, it corresponds to Cd x Zn 1-x Se,0 <x<1。

[0056] For inorganic perovskite quantum dots, the general structural formula of inorganic perovskite quantum dots is AMX3, where A is Cs + ion, M is a divalent metal cation, M includes but is not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0057] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is CMX3, wherein C is a carboxamidine group, and M is a divalent metal cation, and M includes but is not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0058] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of organic-inorganic hybrid perovskite quantum dots is BMX3, wherein B is selected from organic amine cations, and the organic amine cations include but are not limited to CH3(CH2) n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+ (n≥2), M is a divalent metal cation, including but not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0059] When the luminescent material is a quantum dot, in order to improve the solution processing performance of the quantum dot and further improve the luminous efficiency of the light-emitting device 10, in some embodiments of the present application, a ligand is further connected to the surface of the quantum dot. The ligand can be a common ligand in the art, including but not limited to C1~C 30 Fatty carboxylic acid ligands, C6~C 30 Aromatic carboxylic acid ligands, C1~C 30 Aliphatic thiol ligands, C6~C 30 Thiol aromatic ligands, C1~C 30 Fatty amine ligands, C6~C 30 Aromatic amine ligands, C1~C 30 Aliphatic phosphine ligands, C6~C 30 Aromatic phosphine ligands and C6~C 30 One or more of aromatic phosphate ligands and halogen ligands.

[0060] Among them, the fatty carboxylic acid ligands include but are not limited to one or more of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, tetracosanoic acid, hexacosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid and docosahexaenoic acid; the aromatic carboxylic acid ligands include but are not limited to one or more of benzoic acid, dibenzoic acid and 1-naphthoic acid. The fatty thiol ligands include, but are not limited to, one or more of hexyl mercaptan, octyl mercaptan, nonyl mercaptan, decanyl mercaptan, undecanyl mercaptan, dodecanyl mercaptan, hexadecanyl mercaptan and octadecyl mercaptan. The thiol aromatic ligands include, but are not limited to, one or more of benzene mercaptan, triphenylmethyl mercaptan and p-terphenyl-4,4"-dithiol. The fatty amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecanylamine, octadecylamine and oleylamine. The aromatic amine ligands include, but are not limited to, aniline, indenepropylamine, 4-octylaniline and and one or more of benzidine. Aliphatic phosphine ligands include but are not limited to one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide and tridecylphosphine oxide, aromatic phosphine ligands include but are not limited to one or more of bis(2-diphenylphosphinoethyl)phenylphosphine and triphenylphosphine oxide, aromatic phosphate ligands include but are not limited to one or more of tetraethyl p-xylene diphosphate and diphenylethyl phosphate. Halogen ligands include but are not limited to -Cl, -F, -I or -Br.

[0061] In order to further improve the photoelectric performance and device life of the light emitting device 10, in some embodiments of the present application, continue to refer to Figure 1The light emitting device 10 further includes an electronic functional layer 15, which is disposed between the cathode 12 and the light emitting layer 13. The material of the electronic functional layer 15 includes a doped or undoped inorganic compound. The undoped inorganic compound is selected from one or more of a first metal oxide, a semiconductor material of Group IIB-VIA, a semiconductor material of Group IIIA-VA, and a semiconductor material of Group IB-IIIA-VIA. The first metal oxide includes but is not limited to one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2, and / or the semiconductor material of Group IIB-VIA is selected from one or more of ZnS, ZnSe, and CdS, and / or the semiconductor material of Group IIIA-VA is selected from one or more of InP and GaP, and / or the semiconductor material of Group IB-IIIA-VIA is selected from one or more of CuInS and CuGaS. The doping element in the doped inorganic compound is selected from one or more of magnesium, calcium, zirconium, tungsten, gallium, lithium, aluminum, titanium, yttrium, indium and tin. The doped inorganic compound is, for example, selected from one or more of zinc oxide magnesium, zinc oxide calcium, zinc oxide zirconium, zinc oxide gallium, zinc oxide aluminum, zinc oxide lithium, zinc oxide titanium, yttrium zinc oxide, indium tin oxide and titanium lithium oxide, for example, Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) W x O, Zn (1-x) Y x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O、Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, where 0<x≤0.5.

[0062] It should be noted that the electronic functional layer 15 can be a single-layer structure or a multi-layer structure. The electronic functional layer 15 includes, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For the electronic functional layer 15 including the electron injection layer, the electron transport layer, and the hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the electron injection layer is closer to the cathode 12 than the hole blocking layer, and the hole blocking layer is closer to the light-emitting layer 13 than the electron injection layer. The thickness of the electronic functional layer 15 is, for example, 10 nm to 200 nm.

[0063] In order to further improve the comprehensive performance of the light-emitting device 10, in some embodiments of the present application, the materials of the anode 11 and the cathode 12 are independently selected from one or more of metals, carbon materials and second metal oxides. Among them, the metal includes but is not limited to one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg; the carbon material includes but is not limited to one or more of graphite, carbon nanotubes, graphene and carbon fiber; the second metal oxide can be doped or undoped, and the doped second metal oxide includes but is not limited to one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO) and magnesium-doped zinc oxide (MZO), and the undoped second metal oxide includes but is not limited to one or more of TiO2, SnO2, ZnO and In2O3.

[0064] It should be noted that the anode 11 or the cathode 12 may also be a composite electrode, which has a structure similar to a "sandwich", wherein the materials of the upper and lower layers are respectively doped or undoped second metal oxides, and the material of the middle layer is a metal, examples of which are one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. The thicknesses of the anode 11 and the cathode 12 are, for example, independently selected from 20 nm to 300 nm.

[0065] In order to further improve the "interlocking" phenomenon between the first hole functional layer 141 and the light-emitting layer 13 and ensure that the light-emitting device 10 has a good hole injection level, in some embodiments of the present application, Figure 2 As shown, the light emitting device 10 further includes a third hole functional layer 143 , which is disposed between the first hole functional layer 141 and the light emitting layer 13 , wherein the material of the third hole functional layer 143 is a P-type semiconductor material.

[0066] In order to further improve or eliminate the "interlocking" phenomenon between the first hole functional layer 141 and the light-emitting layer 13 and ensure that the light-emitting device 10 has a good hole injection level, in some embodiments of the present application, the thermal expansion coefficient of the P-type semiconductor material is less than 1×10 -4 K -1 ; and / or, the P-type semiconductor material is selected from one or more of NiO, Cr2O3, CoO and MnO, and the thermal expansion coefficients of NiO, Cr2O3, CoO and MnO are all low.

[0067] Furthermore, under the premise of ensuring that the light-emitting device 10 has a good hole injection level and reducing or eliminating the "inter-embedding" problem between the first hole functional layer 141 and the light-emitting layer 13, in order to reduce the manufacturing cost of the light-emitting device 10 and control the overall thickness of the light-emitting device 10, in some embodiments of the present application, the thickness of the third hole functional layer 143 is 10nm to 30nm, for example, it can be 10nm, 20nm, 30nm or a value between any two of the aforementioned values.

[0068] It should be noted that the preparation methods of each layer in the light-emitting device 10 include but are not limited to chemical methods and / or physical methods. Among them, the chemical method includes but is not limited to one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition and co-precipitation. The physical method includes but is not limited to physical plating and solution method. The physical plating method includes but is not limited to thermal evaporation, electron beam evaporation, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition and pulsed laser deposition. The solution method includes but is not limited to one or more of spin coating, printing, blade coating, dip-coating, immersion, spraying, roll coating, casting, slit coating and strip coating.

[0069] Taking the preparation of the first hole functional layer by a solution method as an example, the preparation method of the first hole functional layer includes the following steps:

[0070] S11, depositing a dispersion liquid containing a first hole functional material and a first inorganic filler;

[0071] S12, drying the deposited dispersion to obtain a first hole functional layer.

[0072] In step S11, the dispersant of the dispersion is selected from one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds and amide compounds, wherein alkanes include but are not limited to nonane, decane, dodecane, terpene, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane and cyclopentane, aromatic hydrocarbons include but are not limited to diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-toluene isopropylbenzene, butylbenzene and 1-methylnaphthalene or indene, halogenated alkanes include but are not limited to one or more of dichloromethane, chloroform and carbon tetrachloride, alcohol compounds include but are not limited to one or more of methanol, ethanol, propanol, butanol, ethylene glycol and glycerol, ether compounds include but are not limited to ethylene glycol monomethyl ether, furan compounds include but are not limited to tetrahydrofuran, pyridine compounds include but are not limited to pyridine, and amide compounds include but are not limited to N, N-dimethylformamide. As an example, the dispersant of the dispersion is chlorobenzene.

[0073] In order to improve the density of the first hole functional layer and the dispersion performance of the first hole functional material and the first inorganic filler in the dispersion, in some embodiments of the present application, the concentration of the first hole functional material in the dispersion is 5 mg / mL to 20 mg / mL, for example, it can be 5 mg / mL, 10 mg / mL, 13 mg / mL, 15 mg / mL, 18 mg / mL, 20 mg / mL or a value between any two of the foregoing values.

[0074] In step S11, the deposition method of the dispersion includes, but is not limited to, one or more of spin coating, printing, doctor blading, dip pulling, immersion, spraying, rolling, casting, slit coating, and strip coating.

[0075] In step S12, "drying treatment" includes all processes that can enable the deposited dispersion to obtain higher energy and transform into a solidified film, including but not limited to one or more of natural air drying treatment, heat treatment, vacuum drying treatment, laser annealing treatment, electron beam annealing treatment, atomic annealing treatment and microwave irradiation annealing treatment.

[0076] The embodiment of the present application also provides an electronic device, the electronic device comprising any one of the light-emitting devices described above. The electronic device can be, for example, any electronic product with a display function, including but not limited to a smartphone, a tablet personal computer, a mobile phone, a video phone, an e-book reader, a laptop PC, a netbook computer, a workstation, a server, a personal digital assistant, a portable multimedia player, an MP3 player, a mobile medical machine, a camera, a game console, a digital camera, a car navigation system, an electronic billboard, an ATM, a smart bracelet, a smart watch, a virtual reality (VR) device or a wearable device.

[0077] The technical scheme and technical effects of the present application are described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of the present application and do not specifically limit the present application.

[0078] Example 1

[0079] This embodiment provides a light emitting device and a method for preparing the same. The light emitting device is a quantum dot light emitting diode of a positive structure, such as Figure 2 As shown, from bottom to top, the light emitting device 10 includes an anode 11, a second hole functional layer 142, a first hole functional layer 141, a third hole functional layer 143, a light emitting layer 13, an electronic functional layer 15 and a cathode 12 which are stacked in sequence.

[0080] The materials and thicknesses of the various layers in the light emitting device 10 are as follows:

[0081] The material of the anode 11 is ITO, and the thickness of the anode 11 is 20 nm;

[0082] The material of the cathode 12 is Ag, and the thickness of the cathode 12 is 50 nm;

[0083] The material of the light-emitting layer 13 is composed of CdZnSe / ZnS quantum dots and aluminum titanate. The light-emitting color of the CdZnSe / ZnS quantum dots is green. The mass ratio of CdZnSe / ZnS quantum dots to aluminum titanate in the light-emitting layer 13 is 1:0.3. The thickness of the light-emitting layer 13 is 20 nm.

[0084] The material of the second hole function layer 142 is PEDOT:PSS, and the thickness of the second hole function layer 142 is 30 nm;

[0085] The material of the first hole functional layer 141 is composed of TFB and aluminum titanate. The mass ratio of TFB to aluminum titanate in the first hole functional layer 141 is 1:0.3. The thickness of the first hole functional layer 141 is 30 nm.

[0086] The material of the third hole function layer 143 is MnO, and the thickness of the third hole function layer 143 is 15 nm;

[0087] The material of the electronic functional layer 15 is nano ZnO (with an average particle size of 5 nm), and the thickness of the electronic functional layer 15 is 50 nm.

[0088] The method for preparing the light emitting device in this embodiment includes the following steps:

[0089] S1.1. Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove impurities visible to the naked eye on the surface, and then ultrasonically clean the substrate including the ITO with deionized water for 15 minutes, ultrasonically clean with acetone for 15 minutes, ultrasonically clean with ethanol for 15 minutes, and ultrasonically clean with isopropanol for 15 minutes, and after drying, perform a UV-ozone surface treatment for 15 minutes to obtain a substrate including an anode;

[0090] S1.2, in an air environment at room temperature and pressure, spin-coating a 2.8% PEDOT:PSS aqueous solution on the side of the anode away from the substrate, and then heat-treating at 150°C to solidify the film to obtain a second hole functional layer;

[0091] S1.3, 13 mg of TFB and 3.9 mg of aluminum titanate were mixed and dispersed in 20 mL of chlorobenzene to obtain a first dispersion, and then the first dispersion was spin-coated on the side of the second hole functional layer away from the anode under a nitrogen environment at room temperature and pressure, and then placed under a constant temperature heat treatment of 170° C. to solidify the film to obtain a first hole functional layer;

[0092] S1.4, under a nitrogen environment at room temperature and pressure, spin-coat a 10 mg / mL MnO-n-hexane solution on the side of the first hole functional layer away from the second hole functional layer, and then heat-treat at 170° C. to solidify the film to obtain a third hole functional layer;

[0093] S1.5, 15 mg of CdZnSe / ZnS quantum dots and 4.5 mg of aluminum titanate were mixed and dispersed in 1 mL of n-octane to obtain a second dispersion, and then the second dispersion was spin-coated on the side of the third hole functional layer away from the first hole functional layer under a nitrogen environment at room temperature and pressure, and then placed under a constant temperature heat treatment at 80° C. to solidify the film to obtain a light-emitting layer;

[0094] S1.6. In a nitrogen environment at room temperature and pressure, a 30 mg / mL nano ZnO-ethanol solution is spin-coated on the side of the light-emitting layer away from the third hole functional layer, and then subjected to a constant temperature heat treatment at 80° C. to solidify the film to obtain an electronic functional layer;

[0095] S1.7, place the prefabricated device after step S1.6 in an atmosphere with a pressure of 4×10 -6 In the mbar evaporation chamber, Ag is thermally evaporated on the side of the electronic functional layer away from the light-emitting layer through a mask plate to obtain a cathode, which is then encapsulated using epoxy resin glue and cover glass to obtain a light-emitting device.

[0096] Example 2

[0097] The present embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in the present embodiment is different only in that the mass ratio of CdZnSe / ZnS quantum dots: aluminum titanate in the light-emitting layer is replaced with "1:0.1", and the mass ratio of TFB: aluminum titanate in the first hole functional layer is replaced with "1:0.1".

[0098] Compared with the preparation method of the light-emitting device in Example 1, the preparation method of the light-emitting device in this embodiment is different only in that the mass of aluminum titanate in step S1.3 is replaced by "1.3 mg", and the mass of aluminum titanate in step S1.5 is replaced by "1.5 mg".

[0099] Example 3

[0100] This embodiment provides a light-emitting device and a preparation method thereof. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the mass ratio of CdZnSe / ZnS quantum dots: aluminum titanate in the light-emitting layer is replaced with "1:0.5", and the mass ratio of TFB: aluminum titanate in the first hole functional layer is replaced with "1:0.5".

[0101] Compared with the preparation method of the light-emitting device in Example 1, the preparation method of the light-emitting device in this embodiment is different only in that the mass of aluminum titanate in step S1.3 is replaced by "6.5 mg", and the mass of aluminum titanate in step S1.5 is replaced by "7.5 mg".

[0102] Example 4

[0103] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that "aluminum titanate" in the light-emitting layer is replaced by "chromium oxide green", and "aluminum titanate" in the first hole functional layer is replaced by "chromium oxide green".

[0104] Compared with the preparation method of the light-emitting device in Example 1, the preparation method of the light-emitting device in this embodiment is different only in that: "aluminum titanate" in step S1.3 is replaced by "chromium oxide green", and "aluminum titanate" in step S1.5 is replaced by "chromium oxide green".

[0105] Example 5

[0106] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that "aluminum titanate" in the light-emitting layer is replaced by "glass fiber", and "aluminum titanate" in the first hole functional layer is replaced by "glass fiber".

[0107] Compared with the preparation method of the light-emitting device in Example 1, the preparation method of the light-emitting device in this embodiment is different only in that "aluminum titanate" in step S1.3 is replaced by "glass fiber", and "aluminum titanate" in step S1.5 is replaced by "glass fiber".

[0108] Example 6

[0109] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the third hole functional layer is replaced by "NiO" from "MnO".

[0110] Compared with the preparation method of the light-emitting device in Example 1, the preparation method of the light-emitting device in this embodiment is different only in that the "10 mg / mL MnO-n-hexane solution" in step S1.4 is replaced by "10 mg / mL NiO-n-hexane solution".

[0111] Example 7

[0112] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the third hole functional layer is replaced from "MnO" to "Cr2O3".

[0113] Compared with the preparation method of the light-emitting device in Example 1, the preparation method of the light-emitting device in this embodiment is different only in that the "10 mg / mL MnO-n-hexane solution" in step S1.4 is replaced by "10 mg / mL Cr2O3-n-hexane solution".

[0114] Example 8

[0115] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the third hole functional layer is replaced by "CoO" from "MnO".

[0116] Compared with the preparation method of the light-emitting device in Example 1, the preparation method of the light-emitting device in this embodiment is different only in that the "10 mg / mL MnO-n-hexane solution" in step S1.4 is replaced by "10 mg / mL CoO-n-hexane solution".

[0117] Example 9

[0118] This embodiment provides a light-emitting device and a preparation method thereof. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the light-emitting layer is not doped with aluminum titanate, that is, the material of the light-emitting layer is CdZnSe / ZnS quantum dots.

[0119] Compared with the preparation method of the light-emitting device in Example 1, the only difference in the preparation method of the light-emitting device in this embodiment is that step S1.5 is replaced by "under a nitrogen environment at room temperature and pressure, spin-coat a CdZnSe / ZnS quantum dot-n-octane solution with a concentration of 20 mg / mL on the side of the third hole functional layer away from the first hole functional layer, and then place it at 80°C for constant temperature heat treatment to solidify into a film to obtain a light-emitting layer."

[0120] Example 10

[0121] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that: (1) the light-emitting layer is not doped with aluminum titanate, that is, the material of the light-emitting layer is CdZnSe / ZnS quantum dots; and (2) the third hole functional layer is omitted.

[0122] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is only that: step S1.5 is replaced by "under a nitrogen environment at room temperature and pressure, spin-coat a CdZnSe / ZnS quantum dot-n-octane solution with a concentration of 20 mg / mL on the side of the third hole functional layer away from the first hole functional layer, and then place it at 80°C for constant temperature heat treatment to solidify into a film to obtain a light-emitting layer", and step S1.4 is omitted.

[0123] Embodiment 11

[0124] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the first hole functional layer is not doped with aluminum titanate, that is, the material of the first hole functional layer is TFB.

[0125] Compared with the preparation method of the light-emitting device in Example 1, the only difference in the preparation method of the light-emitting device in this embodiment is that step S1.3 is replaced by "under a nitrogen environment at room temperature and pressure, spin-coat a TFB-chlorobenzene solution with a concentration of 6.5 mg / mL on the side of the second hole functional layer away from the anode, and then place it at a constant temperature heat treatment of 170°C to solidify it into a film, to obtain a first hole functional layer".

[0126] Example 12

[0127] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that: (1) aluminum titanate is not doped in the first hole functional layer, that is, the material of the first hole functional layer is TFB; and (2) the third hole functional layer is omitted.

[0128] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is only that: step S1.3 is replaced by "under a nitrogen environment at room temperature and pressure, spin-coat a TFB-chlorobenzene solution with a concentration of 20 mg / mL on the side of the second hole functional layer away from the anode, and then place it at 170°C for constant temperature heat treatment to solidify into a film, thereby obtaining a first hole functional layer", and step S1.4 is omitted.

[0129] Example 13

[0130] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the third hole functional layer is omitted.

[0131] Compared with the method for preparing the light-emitting device in Example 1, the method for preparing the light-emitting device in this embodiment is different only in that step S1.4 is omitted.

[0132] Comparative Example 1

[0133] This comparative example provides a light-emitting device and a preparation method thereof. Compared with the light-emitting device in Example 1, the light-emitting device in this comparative example is different only in that: (1) the light-emitting layer is not doped with aluminum titanate, that is, the material of the light-emitting layer is CdZnSe / ZnS quantum dots; (2) the first hole functional layer is not doped with aluminum titanate, that is, the material of the first hole functional layer is TFB; (3) the third hole functional layer is omitted.

[0134] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that: step S1.4 is omitted, and step S1.3 is replaced by "under a nitrogen environment at room temperature and pressure, spin-coat a TFB-chlorobenzene solution with a concentration of 6.5 mg / mL on the side of the second hole functional layer away from the anode, and then place it at 170°C for constant temperature heat treatment to solidify into a film to obtain a first hole functional layer", and step S1.5 is replaced by "under a nitrogen environment at room temperature and pressure, spin-coat a CdZnSe / ZnS quantum dot-n-octane solution with a concentration of 20 mg / mL on the side of the third hole functional layer away from the first hole functional layer, and then place it at 80°C for constant temperature heat treatment to solidify into a film to obtain a light-emitting layer".

[0135] Comparative Example 2

[0136] This comparative example provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Example 1, the light-emitting device in this comparative example is different only in that: (1) the light-emitting layer is not doped with aluminum titanate, that is, the material of the light-emitting layer is CdZnSe / ZnS quantum dots; (2) the first hole functional layer is not doped with aluminum titanate, that is, the material of the first hole functional layer is TFB.

[0137] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that: step S1.3 is replaced by "under a nitrogen environment at room temperature and pressure, spin-coat a TFB-chlorobenzene solution with a concentration of 6.5 mg / mL on the side of the second hole functional layer away from the anode, and then place it at 170°C for constant temperature heat treatment to solidify into a film to obtain a first hole functional layer", and step S1.5 is replaced by "under a nitrogen environment at room temperature and pressure, spin-coat a CdZnSe / ZnS quantum dot-n-octane solution with a concentration of 20 mg / mL on the side of the third hole functional layer away from the first hole functional layer, and then place it at 80°C for constant temperature heat treatment to solidify into a film to obtain a light-emitting layer".

[0138] Experimental example

[0139] The performance of the light-emitting devices in Examples 1 to 13, Comparative Examples 1 and 2 was tested. Each packaged light-emitting device was placed in a 120°C environment and powered on for 5 minutes. Then, IVL optical property measurement equipment (including Ocean Optics USB2000, LabView controlled QE-PRO spectrometer, Keithley 2400, high-precision digital source meter Keithley6485, optical fiber with an inner diameter of 50 μm, device test probes and fixtures, various types of related connecting wires and data cards, efficiency test cassettes and data acquisition systems) was used to detect the start-up voltage, current, brightness, luminescence spectrum and other parameters of each light-emitting device, and then the key parameters such as external quantum efficiency and power efficiency were calculated, and the device life of each light-emitting device was tested using a life test device. During the performance test process, three parallel samples were set for each light-emitting device, and the test average value of the three parallel samples was taken for each performance test parameter.

[0140] The current efficiency test method is: set the luminous area to 2mm×2mm=4mm 2 , intermittently collect the brightness value of the light-emitting device in the range of 0V to 8V, the initial voltage value of the brightness collection is 3V, and the data is collected every 0.2V. The brightness value collected each time is divided by the corresponding current density to obtain the current efficiency of the light-emitting device under the collection conditions, and the current efficiency (CE@1000nit, cd / A) at a brightness of 1000nit is obtained.

[0141] The device life test method includes the following steps: under the driving of a constant current (2 mA), using a 128-channel QLED life test system to perform electroluminescent life analysis on each light-emitting device, recording the time required for each light-emitting device to decay from the maximum brightness to 95% (T95, h), and calculating the time required for each light-emitting device to decay from 100% to 95% at a brightness of 1000 nit (T95@1000nit, h) through a decay fitting formula,

[0142] The performance test data of each light emitting device after being powered on for 5 minutes in a 120°C environment are shown in Table 1 below:

[0143] Table 1 Summary of performance test data of light emitting devices in Examples 1 to 13, Comparative Examples 1 and 2

[0144]

[0145]

[0146] As shown in Table 1, compared with the light-emitting devices in Comparative Examples 1 and 2, the light-emitting devices in Examples 1 to 13 have obvious advantages in comprehensive performance under high temperature environments, which are specifically manifested as follows: under high temperature environments, compared with the light-emitting devices in Comparative Examples 1 and 2, the light-emitting devices in Examples 1 to 13 have higher luminous efficiency and longer device life, thereby having better performance stability. Taking the light-emitting devices in Example 1 and Comparative Example 1 as examples, the CE@1000nit of the light-emitting device in Example 1 is 2.3 times that of the CE@1000nit of the light-emitting device in Comparative Example 1, the T95 of the light-emitting device in Example 1 is 4 times that of the T95 of the light-emitting device in Comparative Example 1, and the T95@1000nit of the light-emitting device in Example 1 is 5.7 times that of the T95@1000nit of the light-emitting device in Comparative Example 1.

[0147] It can be seen that by doping the first inorganic filler in the first hole functional layer and / or doping the second inorganic filler in the light-emitting layer, it is beneficial to reduce the degree of thermal deformation of the first hole functional layer and / or the light-emitting layer, thereby improving the "interlocking" phenomenon between the first hole functional layer and the light-emitting layer, improving the luminous efficiency and device life of the light-emitting device in a high-temperature environment, and helping to improve the performance stability of the light-emitting device. Furthermore, a third hole functional layer is added between the first hole functional layer and the light-emitting layer, and the material of the third hole functional layer is a P-type semiconductor material, which can further improve the luminous efficiency and device life of the light-emitting device in a high-temperature environment.

[0148] The above is a detailed introduction to a light-emitting device and an electronic device including a light-emitting device provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application; ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein by equivalents; and these modifications or replacements do not make the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A light emitting device, characterized in that: include: An anode and a cathode arranged opposite to each other; A light-emitting layer is disposed between the anode and the cathode; as well as A first hole functional layer is disposed between the anode and the light-emitting layer; Wherein, the material of the first hole functional layer comprises a first hole functional material and a first inorganic filler, and the thermal expansion coefficient of the first inorganic filler is lower than the thermal expansion coefficient of the first hole functional material; And / or, the material of the light-emitting layer includes a light-emitting material and a second inorganic filler, and the thermal expansion coefficient of the second inorganic filler is lower than the thermal expansion coefficient of the light-emitting material.

2. The light emitting device according to claim 1, characterized in that: The first inorganic filler is selected from one or more of chromium oxide green, aluminum titanate and glass fiber; and / or The second inorganic filler is selected from one or more of chromium oxide green, aluminum titanate and glass fiber.

3. The light emitting device according to claim 1, characterized in that: The material of the first hole functional layer comprises a first hole functional material and a first inorganic filler, and the mass ratio of the first hole functional material to the first inorganic filler is 1:(0.1-0.5); and / or The first hole functional material comprises 3-hexyl substituted polythiophene, poly(9-vinyl carbazole), 4,4'-di(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)aniline)] )diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)], 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tri(carbazol-9-yl)triphenylamine, 4,4',4'-tri(2-naphthylphenylamino)triphenylamine triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N' -diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and one or more of 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene.

4. The light emitting device according to claim 1, characterized in that: The light-emitting device also includes a second hole functional layer, which is arranged between the anode and the first hole functional layer, and the material of the second hole functional layer includes one or more of poly (3,4-ethylenedioxythiophene): poly (styrene sulfonic acid), copper phthalocyanine, phthalocyanine titanium, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polyaniline, polypyrrole, MoO3, WO3, CrO3, CuO, Cu2O, CuS, MoS2 and WS2.

5. The light emitting device according to claim 1, characterized in that: The material of the light-emitting layer comprises a light-emitting material and a second inorganic filler, and the mass ratio of the light-emitting material to the second inorganic filler is 1:(0.1-0.5); and / or The luminescent material comprises one or more of an organic luminescent material and quantum dots; The organic light-emitting material is selected from one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diarylanthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or the quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots;The material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot and the material of the shell of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe , HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs , GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb The group IV-VI compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the group I-III-VI compound is selected from one or more of CuInS, CuInSe and AgInS; and / or the general structural formula of the inorganic perovskite quantum dots is AMX3, wherein A is Cs; + ion, M is a divalent metal cation, M is selected from Pb 2 + Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; and / or, the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; and / or, the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, B is selected from an organic amine cation.

6. The light emitting device according to claim 1, characterized in that: The light emitting device further comprises an electronic functional layer, which is disposed between the cathode and the light emitting layer, and the material of the electronic functional layer comprises a doped or non-doped inorganic compound; Wherein, the undoped inorganic compound is selected from one or more of a first metal oxide, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material and an IB-IIIA-VIA semiconductor material, the first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2, and / or the IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe and CdS, and / or the IIIA-VA semiconductor material is selected from one or more of InP and GaP, and / or the IB-IIIA-VIA semiconductor material is selected from one or more of CuInS and CuGaS; and / or the doping element in the doped inorganic compound is selected from one or more of magnesium, calcium, zirconium, tungsten, gallium, lithium, aluminum, titanium, yttrium, indium and tin; and / or The materials of the anode and the cathode are independently selected from one or more of metals, carbon materials and second metal oxides; wherein the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg, and / or the carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and / or the second metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO and In2O3.

7. The light emitting device according to any one of claims 1 to 6, characterized in that: The light-emitting device further comprises a third hole functional layer, wherein the third hole functional layer is arranged between the first hole functional layer and the light-emitting layer; wherein the material of the third hole functional layer is a P-type semiconductor material.

8. The light emitting device according to claim 7, characterized in that: The P-type semiconductor material is selected from one or more of NiO, Cr2O3, CoO and MnO; and / or The thermal expansion coefficient of the P-type semiconductor material is less than 1×10 -4 K -1 .

9. The light emitting device according to claim 7, characterized in that: The thickness of the third hole functional layer is 10 nm to 30 nm.

10. An electronic device, characterized in that: The invention comprises a light emitting device as claimed in any one of claims 1 to 9.

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