A packaging structure for preventing film peeling from extending due to cutting

Abstract

The present invention relates to a field related to packaging structures, and discloses a packaging structure for preventing film peeling and extension caused by cutting, comprising a substrate and a CMOS circuit located at the bottom, wherein a bottom anode film layer is arranged above the substrate and the CMOS circuit at the bottom, and an anode PDL, an OLED light-emitting device, a first ring-shaped dam organic package and a second ring-shaped dam organic package are arranged above the anode film layer, a cathode is also arranged on the anode PDL and the OLED light-emitting device, and a whole-surface packaging layer, a next-layer packaging, an OC flat layer and a CF film layer are sequentially arranged on the anode film layer; the present invention increases the adhesion between film layers through two rings of dam organic package rings and structural organic package layers, so that the peeling position of the inorganic film layer is suppressed at the ring structure, thereby protecting the edge of the OLED device from the invasion of water vapor, and improving the product's feasibility and service life.

Description

Technical Field

[0001] The present invention belongs to the field of packaging structures, and in particular to a packaging structure for preventing peeling and extension of a film layer caused by cutting. Background Art

[0002] When the existing silicon-based Micro-OLED displays are cut into modules, because the encapsulation film layer is coated on the entire surface and is an inorganic film layer, the overall film layer stress is relatively large. Affected by the cutting, the encapsulation film layer at the edge of the product will crack and peel off (hereinafter referred to as peeling) after cutting. After peeling occurs, the product will experience edge water vapor intrusion during the subsequent quality inspection process, resulting in abnormal product reliability and reduced service life.

[0003] Therefore, in view of the above situation, there is an urgent need to provide a packaging structure that prevents the peeling of the film layer caused by cutting, so as to overcome the shortcomings in current practical applications. Summary of the invention

[0004] In view of the above situation, in order to overcome the defects of the prior art, the present invention provides a packaging structure that prevents the peeling and extension of the film layer caused by cutting, which effectively solves the problems in the above background technology.

[0005] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a packaging structure that prevents cutting from causing peeling and extension of a film layer, comprising a substrate and a CMOS circuit located at the bottom, a bottom anode film layer is arranged above the bottom substrate and the CMOS circuit, and an anode PDL, an OLED light-emitting device, a first ring-shaped dam organic package and a second ring-shaped dam organic package are arranged above the anode film layer, a cathode is also arranged on the anode PDL and the OLED light-emitting device, and a full-surface packaging layer, a next layer of packaging, an OC flat layer and a CF film layer are sequentially arranged on the anode film layer.

[0006] Preferably, the thickness of the substrate and the CMOS circuit is 0.4-1 mm.

[0007] Preferably, the thickness of the anode film layer is 50-200 nm;

[0008] The thickness of the anode PDL is 100-400 nm.

[0009] Preferably, the thickness of the OLED light-emitting device is 100-300 nm.

[0010] Preferably, the thickness of the first ring-shaped dam organic package and the second ring-shaped dam organic package are both 500-2000 nm.

[0011] Preferably, the distance between the first ring-shaped dam organic package and the second ring-shaped dam organic package is 10-100 microns.

[0012] Preferably, the thickness of the next layer of packaging is 40-100 nm.

[0013] Preferably, the thickness of the OC planar layer is 300-400 nm.

[0014] Preferably, the thickness of the cathode is 50-150 nm.

[0015] Preferably, the thickness of the CF film layer is 500-1500 nm.

[0016] Compared with the prior art, the present invention has the following beneficial effects:

[0017] The present invention adds two circles of dam packaging (hereinafter referred to as dam) as organic packaging near the product cutting path, and increases the adhesion between the organic film layer and the inorganic packaging layer, so that the inorganic film layer is prevented from cracking and peeling when the OLED device is cut. At the same time, the shape of the annular dam stops the inorganic packaging film layer from continuing to peel at the annular position, thereby suppressing the cracking and spreading of the inorganic packaging film layer to the display area in the surface, and controlling the cracking of the inorganic film layer outside the dam packaging, thereby protecting the device from the invasion of water vapor and improving the reliability and service life of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings are used to provide further understanding of the present invention and constitute a part of the specification. They are used to explain the present invention together with the embodiments of the present invention and do not constitute a limitation of the present invention.

[0019] In the attached picture:

[0020] Figure 1 A top view of the present invention;

[0021] Figure 2 It is a cross-sectional view of the present invention.

[0022] Figure 3 It is a schematic diagram of the product substrate and CMOS circuit structure;

[0023] Figure 4 for Figure 3 On the basis of the anode film structure is added;

[0024] Figure 5 for Figure 4 A schematic diagram of the PDL layer structure is added on the basis;

[0025] Figure 6 for Figure 5A schematic diagram of the OLED device structure is added on the basis of the above;

[0026] Figure 7 for Figure 6 A schematic diagram of the cathode structure is added on the basis of

[0027] Figure 8 and Fig. 9 for Figure 7 Based on the above, a schematic diagram of the ring-shaped dam organic packaging structure is added;

[0028] Fig.10 for Fig. 9 A schematic diagram of the whole-surface packaging structure added on the basis of FIG.

[0029] Fig.11 for Fig.10 A schematic diagram of another encapsulation layer structure added on the basis of FIG.

[0030] Fig.12 for Fig.11 Schematic diagram of the OC flat layer structure added on the basis of FIG.

[0031] Fig.13 for Fig.12 Schematic diagram of the structure of the CF membrane layer added on the basis.

[0032] In the figure: substrate and CMOS circuit 110, anode film layer 111, anode PDL 112, OLED light-emitting device 113, cathode 114, annular dam organic package 115, 116, whole surface package layer 117, next layer package 118, OC flat layer 119, CF film layer 120. DETAILED DESCRIPTION

[0033] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments; based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0034] See also Figure 1-Figure 13An embodiment of the present invention provides a packaging structure for preventing film peeling and extension caused by cutting, a packaging structure for preventing film peeling and extension caused by cutting, including a substrate and a CMOS circuit 110 located at the bottom, a bottom anode film layer 111 is arranged above the bottom substrate and the CMOS circuit 110, and an anode PDL112, an OLED light-emitting device 113, a first ring-shaped dam organic package 115 and a second ring-shaped dam organic package 116 are arranged above the anode film layer 111, a cathode 114 is also arranged on the anode PDL112 and the OLED light-emitting device 113, and a full-surface packaging layer 117, a next-layer packaging 118, an OC flat layer 119 and a CF film layer 120 are also arranged on the anode film layer 111 in sequence.

[0035] In the embodiment of the present invention, the bottom substrate and CMOS circuit 110 structure is firstly formed, and the thickness of the structure is about 0.4-1 mm; then, Figure 4 As shown, the bottom anode film layer 111 structure is manufactured, and then the Figure 5 The anode PDL (pixel definition layer) 112 structure, wherein the thickness of the anode film layer 111 structure ranges from 50 to 200 nm; and the thickness of the anode PDL 112 structure ranges from 100 to 400 nm; Figure 5 After production is completed Figure 6 The OLED light emitting device 113 structure has a thickness ranging from 100 to 300 nm; then Figure 6 Made on the basis of Figure 7 The cathode 114 structure has a thickness range of 50-150 nm; and then Figure 7 Based on the IJP equipment produced using N2 environment Figure 8 The first ring dam organic package 115 structure and Fig. 9 The second ring dam organic package 116 structure in which the first ring dam organic package 115 structure and Fig. 9 The thickness of the second ring dam organic package 116 structure is 500-2000nm, and the first ring dam organic package 115 structure is Fig. 9 The distance between the second ring dam organic package 116 structures is 10-100 microns; then Fig. 9 Made on the basis of Fig.10 The entire surface encapsulation layer 117 structure has a thickness of 400-1000nm, and then Fig.10 Made on the basis of Fig.11 The next layer of packaging 118 structure has a thickness of 40-100nm; then Fig.11Made on the basis of Fig.12 The OC flat layer 119 structure in the embodiment has a thickness of 300-400nm; finally, Fig.12 Made on the basis of Fig.13 The CF film layer 120 structure has a thickness of 500-1500nm.

[0036] Reference Figure 1 and Figure 2 The present invention adds a structure including but not limited to two circles of dam organic packaging rings 115 and 116; the organic packaging layer increases the adhesion between the film layers through the two circles of dam organic packaging rings 115 and 116 structure. At the same time, this multi-layer ring structure can protect the OLED device from the inorganic film layer cracking and peeling during the cutting process, so that the peeling position of the inorganic film layer is suppressed at the ring structure, thereby protecting the edge of the OLED device from the invasion of water vapor, thereby improving the possibility and service life of the product.

[0037] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0038] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A packaging structure for preventing film peeling caused by cutting, comprising a substrate and a CMOS circuit at the bottom, characterized in that: A bottom anode film layer is arranged above the bottom substrate and the CMOS circuit, and an anode PDL, an OLED light-emitting device, a first ring-shaped dam organic package and a second ring-shaped dam organic package are arranged above the anode film layer. A cathode is also arranged on the anode PDL and the OLED light-emitting device, and a full-surface packaging layer, a next packaging layer, an OC flat layer and a CF film layer are sequentially arranged on the anode film layer.

2. A packaging structure for preventing film layer peeling caused by cutting according to claim 1, characterized in that: The thickness of the substrate and the CMOS circuit is 0.4-1 mm.

3. The packaging structure for preventing film layer peeling caused by cutting according to claim 1, characterized in that: The thickness of the anode film layer is 50-200nm; The thickness of the anode PDL is 100-400 nm.

4. The packaging structure for preventing film layer peeling caused by cutting according to claim 1, characterized in that: The thickness of the OLED light-emitting device is 100-300 nm.

5. The packaging structure for preventing film layer peeling caused by cutting according to claim 1, characterized in that: The thickness of the first ring-shaped dam organic package and the second ring-shaped dam organic package are both 500-2000 nm.

6. A packaging structure for preventing film layer peeling caused by cutting according to claim 5, characterized in that: The distance between the first ring-shaped dam organic package and the second ring-shaped dam organic package is 10-100 micrometers.

7. The packaging structure for preventing film layer peeling caused by cutting according to claim 1, characterized in that: The thickness of the next layer of packaging is 40-100 nm.

8. The packaging structure for preventing film layer peeling caused by cutting according to claim 1, characterized in that: The thickness of the OC planar layer is 300-400 nm.

9. The packaging structure for preventing film layer peeling caused by cutting according to claim 1, characterized in that: The thickness of the cathode is 50-150 nm.

10. The packaging structure for preventing film layer peeling caused by cutting according to claim 1, characterized in that: The thickness of the CF film layer is 500-1500nm.

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