Self-powered optical detector and preparation method thereof

By constructing Ti3C2Tx/Cu3(HHTP)2/n-Si heterojunction and Schottky junction on n-type silicon wafers, the problems of complex processing and low light responsiveness of existing photodetectors are solved, and the high-efficiency light response and low dark current performance of self-powered photodetectors are achieved, which is suitable for industrial production.

CN119744100APending Publication Date: 2025-04-01XINJIANG AGRI UNIV
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Patent Information

Application Number
CN202411820305.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-11
Publication Date
2025-04-01

AI Technical Summary

Technical Problem

The existing photodetectors based on two-dimensional semiconductor materials are complex in processing, have large dark currents, low light responsiveness, and require external power supply to generate photocurrent.

Method used

By growing a two-dimensional conductive MOF film on the surface of n-type silicon wafers, the Ti3C2Tx/Cu3(HHTP)2/n-Si heterojunction and Schottky junction are constructed, and the preparation of a self-powered photodetector is realized. The liquid phase epitaxial method and spraying method are used to simplify the process and reduce the preparation steps and equipment requirements.

Benefits of technology

Under zero bias, the photodetector exhibits excellent photoresponsiveness in the ultraviolet to near infrared range, with high light responsiveness, low dark current, and simple and easy to industrialize the preparation method.

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Abstract

The invention discloses a self-powered optical detector and a preparation method thereof, and belongs to the technical field of two-dimensional semiconductor preparation. The preparation method comprises the following steps: cleaning an n-type silicon wafer, fixing the cleaned n-type silicon wafer on a back plate, alternately spraying a copper acetate solution and a 2, 3, 6, 7, 10, 11-hexahydroxy benzo benzene solution on 1 / 2-2 / 3 of the n-type silicon wafer, and washing to obtain a silicon wafer loaded with a Cu3 (HHTP) 2 film; the method comprises the following steps: fixing a silicon wafer on a back plate, and spraying a Ti3C2Tx nanosheet suspension on 1 / 2-2 / 3 of a Cu3 (HHTP) 2 thin film to form a Ti3C2Tx thin film; and loading electrodes on the surfaces of the n-type silicon wafer and the Ti3C2Tx thin film, and curing to obtain the Ti3C2Tx thin film. The self-powered optical detector can solve the problems that an existing optical detector based on a two-dimensional semiconductor material is complex in processing, large in dark current and low in light responsivity and needs to be driven by an external power supply to generate light current, and is wide in application prospect.
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