Magnetic tunnel junction device, plasma modulator and information storage device

Abstract

The invention provides a magnetic tunnel junction device, a plasma modulator and an information storage device. The magnetic tunnel junction device comprises a first electrode layer, a second electrode layer and a tunneling barrier layer which are stacked, the first electrode layer has magnetism, the magnetic moment of the first electrode is needle-shaped magnetic moment, and the first electrode layer is grounded; the second electrode layer has magnetism, the magnetic moment of the second electrode is configured to be switchable, and the second electrode layer and the first electrode layer are electrically connected in a bias mode; the first electrode layer and the second electrode layer are vertically crossed and stacked, and the tunneling barrier layer is clamped between the crossed areas of the first electrode layer and the second electrode layer.

Description

Technical Field

[0001] The present application belongs to the field of plasma modulation technology, and more specifically, relates to a magnetic tunnel junction device, a plasma modulator and an information storage device. Background Art

[0002] Plasma is an ionized gaseous substance composed of positive and negative ions produced by the ionization of atoms and atomic groups that have been deprived of some of their electrons. Its movement is mainly governed by electromagnetic forces. For example, plasma devices based on magnetic tunnel junctions can operate at ultrafast modulation speeds, with tunneling time scales of about a few femtoseconds.

[0003] In the prior art, most plasma devices have high electron conductivity and low waveguide loss in the visible to infrared spectral region. Due to the inherent high ohmic loss in the visible to infrared spectral region, the application of magnetic tunnel junctions made of magnetic materials in this spectral region has been ignored.

[0004] Therefore, there is an urgent need to provide a device based on a magnetic tunnel junction that can be applied at least in the visible light to infrared spectral region to achieve functions such as circular polarization separation on different sides, phase-sensitive detection or light intensity modulation. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide a magnetic tunnel junction device, a plasma modulator and an information storage device to solve the technical problem that the existing magnetic tunnel junction made of magnetic materials cannot be applied to the visible light to infrared spectral region due to high ohmic losses.

[0006] To achieve the above purpose, the technical solution adopted in this application is:

[0007] Provided is a magnetic tunnel junction device, comprising a first electrode layer, a second electrode layer and a tunnel barrier layer which are stacked;

[0008] The first electrode layer is magnetic, the magnetic moment of the first electrode is a needle-shaped magnetic moment, and the first electrode layer is grounded;

[0009] The second electrode layer has magnetism, the magnetic moment of the second electrode is configured as a switchable magnetic moment, and the second electrode layer and the first electrode layer are biased and electrically connected;

[0010] Furthermore, the first electrode layer and the second electrode layer are vertically crossed and stacked, and the tunneling barrier layer is sandwiched between the crossing region of the first electrode layer and the second electrode layer.

[0011] In some embodiments, the magnetic tunnel junction device further includes a substrate layer;

[0012] The two ends of the first electrode layer along its length direction are symmetrically arranged on both sides of the width direction of the second electrode layer, and the portion of the first electrode layer between the two ends is stacked below the second electrode layer, and the two ends are stacked on the base layer.

[0013] In some embodiments, the magnetic tunnel junction device further includes a substrate layer;

[0014] The two ends of the second electrode layer along its length direction are symmetrically arranged on both sides of the width direction of the first electrode layer, and the part of the second electrode layer located between the two ends is stacked above the first electrode layer, and the two ends are stacked on the base layer.

[0015] In some embodiments, the magnetic tunnel junction device further includes a magnetic source, and the magnetic source is used to apply a magnetic field to the magnetic tunnel junction;

[0016] Furthermore, the magnetic field direction of the magnetic source is configured to be able to control the direction of the switchable magnetic moment relative to the needle-shaped magnetic moment, and the magnetic field strength of the magnetic source is configured to be able to control the on-off state of the photon signal generated by the magnetic tunnel junction device.

[0017] In some embodiments, the first electrode layer is a PtMn / Co material layer, the tunneling barrier layer is a MgO material layer, and the second electrode layer is a Co material layer.

[0018] In some embodiments, the first electrode layer is a CrI3 material layer, the tunneling barrier layer is an AlOx material layer, and the second electrode layer is an Al material layer.

[0019] In some embodiments, the first electrode layer is an Al material layer, the tunneling barrier layer is an AlOx material layer, and the second electrode layer is a PrCaMnO3 material layer.

[0020] In some embodiments, the electrode layer and the magnetic source include complementary metal oxide semiconductor compatible materials.

[0021] The beneficial effects of the magnetic tunnel junction device provided by the present application are:

[0022] Compared with the prior art, the magnetic tunnel junction device provided by the present application has a first electrode layer having magnetism and a needle-shaped magnetic moment, and the first electrode layer is grounded. The second electrode layer has magnetism and a magnetic moment is configured as a switchable magnetic moment, which is a switchable magnetic moment relative to an external magnetic field. Moreover, the first electrode layer and the second electrode layer are vertically crossed and stacked, and the first electrode layer and the second electrode layer are biased and electrically connected. The tunneling barrier layer is sandwiched between the intersection area of ​​the first electrode layer and the second electrode layer, and the first electrode layer, the tunneling barrier layer and the second electrode layer are stacked to form a magnetic tunnel junction, and the tunneling barrier layer forms an insulating barrier between the first electrode layer and the second electrode layer. Under a certain bias voltage, electrons can inelastically pass through the tunneling barrier layer, and the first electrode, as an antiferromagnetic layer, has a needle-shaped magnetic moment due to the exchange bias effect.

[0023] Based on the spin tunneling principle of the magnetic tunnel junction, when the magnetization direction of the first electrode is parallel to the magnetization direction of the second electrode, the spin-up and spin-down electrons pass through the tunneling barrier layer and occupy their respective sub-bands with the same spin direction, so the tunneling probability is greatly improved. On the contrary, when the magnetization direction of the first electrode is opposite to the magnetization direction of the second electrode, the spin-up and spin-down electrons are misaligned, and the tunneling current passing through the tunneling barrier layer will be greatly reduced. In other words, the tunneling current passing through the tunneling barrier layer can be controlled by the relative magnetic orientation of the first electrode and the second electrode.

[0024] Since most existing plasma devices have high electronic conductivity and low waveguide loss in the visible to infrared spectral region, the application of magnetic tunnel junctions made of magnetic materials has been neglected due to the inherent high ohmic losses in this spectral region.

[0025] The magnetic tunnel structure provided by the present application is that the first electrode layer has a needle-shaped magnetic moment, the first electrode layer is grounded, the second electrode layer has a switchable magnetic moment, the first electrode layer and the second electrode layer are vertically crossed and stacked, the first electrode layer and the second electrode layer are biased and electrically connected, and the tunneling barrier layer is sandwiched between the intersection area of ​​the first electrode layer and the second electrode layer, and the control of the tunneling current passing through the tunneling barrier layer is achieved by controlling the magnetization direction of the first electrode and the magnetization direction of the second electrode in parallel or oppositely. Under a specific bias voltage, electrons can pass through the tunneling barrier layer inelastically, and the energy of the electrons before and after the tunneling process is not conserved, and the lost energy quantum is dissipated as heat, which can be externally coupled as photons, protons or phonons, so that the proton signal or the light emission signal can be externally modulated by changing the direction of the magnetic field.

[0026] Therefore, the present application can realize the research and analysis of magnetic, electrical and optical properties through this design, and can further realize the analysis of the physics of magneto-optical effects through the magnetic tunnel junction, for example, it can realize circular polarization separation on different sides, phase-sensitive detection or light intensity modulation and other functions, for example, the information encoded in the spin-related tunnel can also be read out through the emitted photons, for example, the correlation between the spin electronic state and the phase, chirality, intensity, polarization and other parameters of the emitted photon parameters can be established and studied, for example, the correlation between the circular polarization of the emitted photons and the different spin states of the tunnel electrons can be studied.

[0027] Another object of the present application is to provide a plasma modulator, which includes the magnetic tunnel junction device as described above.

[0028] The beneficial effects of the plasma modulator provided in the present application compared to the prior art are consistent with the beneficial effects of the magnetic tunnel junction device provided in the present application compared to the prior art, and will not be repeated here.

[0029] Another object of the present application is to provide an information storage device, which includes the magnetic tunnel junction device as described above; or, the information storage device includes the plasma modulator as described above.

[0030] The beneficial effects of the information storage device provided in the present application compared to the prior art are consistent with the beneficial effects of the magnetic tunnel junction device provided in the present application compared to the prior art, and will not be repeated here.

[0031] Alternatively, the beneficial effects of the information storage device provided in the present application compared to the prior art are consistent with the beneficial effects of the plasma modulator provided in the present application compared to the prior art, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0033] Figure 1A A schematic diagram of a simulated plasma light source based on a magnetic tunnel junction of PtMn / Co, MgO, and Co provided in an embodiment of the present application;

[0034] Figure 1B A schematic cross-sectional view of a magnetic tunnel junction device provided in an embodiment of the present application;

[0035] Figure 2 The spin tunneling of the magnetic tunnel junction is shown from the perspective of density of states;

[0036] Figure 3 The embodiments of the present application provide Al, AlOx, PrCaMnO 3 Proton switching of magnetic tunnel junctions;

[0037] Figure 4A The exploration of the gating effect of the magnetic phase transition by irradiating a femtosecond laser with a wavelength of 900 nm is shown;

[0038] Figure 4B It is shown that the magnetic phase of the CrI3-based double-layer film can be switched under different temperatures and external magnetic fields.

[0039] Among them, the reference numerals in the figure are:

[0040] 100. a first electrode layer;

[0041] 200, a second electrode layer;

[0042] 300, tunnel barrier layer;

[0043] 400. Basal layer. DETAILED DESCRIPTION

[0044] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0045] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0046] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0047] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0048] As is known to those skilled in the art, plasma technology has attracted much attention due to its ultra-large bandwidth and sub-wavelength optical field confinement. For on-chip applications, it is crucial to develop electrically driven plasma elements with nanometer dimensions, and plasma devices based on magnetic tunnel junctions are expected to be applied on-chip with ultrafast modulation operation speeds of hundreds of terahertz because the tunneling time scale is about a few femtoseconds. However, most plasma devices are made of gold or silver, which have high electronic conductivity and low waveguide loss in the visible to infrared spectral region.

[0049] Nanostructures made of magnetic materials are often overlooked as research platforms for various functional proton devices because of their inherently high ohmic losses in the visible to infrared range. In fact, magnetic materials can change optical modes by means of magnetic fields during device operation, opening up new research and development possibilities. In addition, the switching speed of magnetization has been demonstrated to be as fast as a few femtoseconds, making them ideal candidates for ultrafast and high-density information storage.

[0050] In order to change the optical response of magnetic materials through a variety of magneto-optical effects, the research has produced the Faraday effect, Kerr effect, magnetic circular dichroism, etc. These magneto-optical effects can make electromagnetic waves with different elliptically polarized waves propagate at different propagation speeds, thereby realizing left and right circular polarization separation, phase-sensitive detection and light intensity modulation. However, since the change of optical properties with magnetic field intensity is usually small, the absolute value of light intensity modulation is also weak. For example, the polarization of light reflected from or transmitted through a magnetic nanodot array can rotate by at most 1°, which is equivalent to an intensity modulation of the order of 1%. Therefore, the study of optical properties through magneto-optical effects is hindered to a certain extent.

[0051] Therefore, there is an urgent need to provide a device based on a magnetic tunnel junction that can be applied at least in the visible light to infrared spectral region to achieve functions such as circular polarization separation on different sides, phase-sensitive detection or light intensity modulation. Based on the above problems, the embodiments of the present application provide a magnetic tunnel junction device that can study optical properties based on the magneto-optical effect, which can achieve functions such as circular polarization separation on different sides, phase-sensitive detection or light intensity modulation.

[0052] The magnetic tunnel junction device, plasma modulator, and information storage device provided in the embodiments of the present application are now described.

[0053] Please refer to Figures 1 to Figure 4B As shown, the magnetic tunnel junction device provided in the embodiment of the present application includes a first electrode layer 100, a second electrode layer 200 and a tunneling barrier layer 300 which are stacked. The first electrode layer 100 is magnetic, the magnetic moment of the first electrode is a needle-shaped magnetic moment, and the first electrode layer 100 is grounded. The second electrode layer 200 is magnetic, the magnetic moment of the second electrode is configured as a switchable magnetic moment, and the second electrode layer 200 and the first electrode layer 100 are biased and electrically connected. Moreover, the first electrode layer 100 and the second electrode layer 200 are vertically crossed and stacked, and the tunneling barrier layer 300 is sandwiched between the intersection area of ​​the first electrode layer 100 and the second electrode layer 200.

[0054] The magnetic tunnel junction device provided by the embodiment of the present application, wherein the first electrode layer 100 has magnetism and has a needle-shaped magnetic moment, and the first electrode layer 100 is grounded. The second electrode layer 200 has magnetism and has a magnetic moment configured as a switchable magnetic moment, which is a switchable magnetic moment relative to the external magnetic field. Moreover, the first electrode layer 100 and the second electrode layer 200 are vertically crossed and stacked, and the first electrode layer 100 and the second electrode layer 200 are biased and electrically connected. The tunneling barrier layer 300 is sandwiched between the intersection area of ​​the first electrode layer 100 and the second electrode layer 200, and the first electrode layer 100, the tunneling barrier layer 300 and the second electrode layer 200 are stacked to form a magnetic tunnel junction, and the tunneling barrier layer 300 forms an insulating barrier between the first electrode layer 100 and the second electrode layer 200. Under a certain bias voltage, electrons can inelastically pass through the tunneling barrier layer 300, and the first electrode, as an antiferromagnetic layer, has a needle-shaped magnetic moment due to the exchange bias effect.

[0055] Based on the spin tunneling principle of the magnetic tunnel junction, when the magnetization direction of the first electrode is parallel to the magnetization direction of the second electrode, the spin-up and spin-down electrons pass through the tunneling barrier layer 300 and occupy their respective sub-bands with the same spin direction, so the tunneling probability is greatly improved. On the contrary, when the magnetization direction of the first electrode is opposite to the magnetization direction of the second electrode, the spin-up and spin-down electrons are misaligned, and the tunneling current passing through the tunneling barrier layer 300 will be greatly reduced. In other words, the tunneling current passing through the tunneling barrier layer 300 can be controlled by the relative magnetic orientation of the first electrode and the second electrode.

[0056] Since most existing plasma devices have high electronic conductivity and low waveguide loss in the visible to infrared spectral region, the application of magnetic tunnel junctions made of magnetic materials has been neglected due to the inherent high ohmic losses in this spectral region.

[0057] The magnetic tunnel structure provided by the present application is that the first electrode layer 100 has a needle-shaped magnetic moment, the first electrode layer 100 is grounded, the second electrode layer 200 has a switchable magnetic moment, the first electrode layer 100 and the second electrode layer 200 are vertically crossed and stacked, the first electrode layer 100 and the second electrode layer 200 are biased and electrically connected, and the tunneling barrier layer 300 is sandwiched between the intersection area of ​​the first electrode layer 100 and the second electrode layer 200. By controlling the magnetization direction of the first electrode and the magnetization direction of the second electrode in parallel or oppositely, the tunneling current passing through the tunneling barrier layer 300 is controlled. Under a specific bias voltage, electrons can pass through the tunneling barrier layer 300 inelastically, and the energy of the electrons before and after the tunneling process is not conserved, and the lost energy quantum is dissipated as heat, which can be externally coupled as photons, protons or phonons, so that the proton signal or the light emission signal can be externally modulated by changing the direction of the magnetic field.

[0058] Therefore, the present application can realize the research and analysis of magnetic, electrical and optical properties through this design, and can further realize the analysis of the physics of magneto-optical effects through the magnetic tunnel junction, for example, it can realize circular polarization separation on different sides, phase-sensitive detection or light intensity modulation and other functions, for example, the information encoded in the spin-related tunnel can also be read out through the emitted photons, for example, the correlation between the spin electronic state and the phase, chirality, intensity, polarization and other parameters of the emitted photon parameters can be established and studied, for example, the correlation between the circular polarization of the emitted photons and the different spin states of the tunnel electrons can be studied.

[0059] Among them, the magnetic tunnel junction refers to the so-called junction element formed by sandwiching an insulating layer between two ferromagnetic layers. In ferromagnetic materials, due to the exchange effect of quantum mechanics, the three-dimensional orbital localized electron energy band of the ferromagnetic metal is split, so that the spin-up and spin-down electrons near the Fermi surface have different energy state densities, thereby generating a spin-related tunneling effect. Usually, the coercive forces of the two ferromagnetic layers are different. Therefore, when reverse magnetization is applied, the magnetization vector of the ferromagnetic layer with a small coercive force is flipped first, making the magnetization directions of the two ferromagnetic layers antiparallel. The tunneling probability of electrons from one ferromagnetic layer to another is related to the magnetization directions of the two ferromagnetic layers.

[0060] The embodiment of the present application utilizes the principle of the magnetic tunnel junction described above to design the configuration of the first electrode layer 100 and the second electrode layer 200, as well as the magnetic moment, so that when the magnetization direction of the first electrode is parallel to the magnetization direction of the second electrode, the tunneling probability is greatly improved. On the contrary, when the magnetization direction of the first electrode is opposite to the magnetization direction of the second electrode, the tunneling current passing through the tunneling barrier layer 300 will be greatly reduced. In this way, by utilizing the large difference between the magnetization direction of the first electrode and the magnetization direction of the second electrode being parallel and opposite, and utilizing the non-conservation of electron energy before and after the tunneling process, the lost energy quanta are dissipated as heat, which can be externally coupled to photons, protons or phonons, thereby realizing the research and analysis of magnetic, electrical and optical properties, and realizing further analysis of the physics of magneto-optical effect based on the magnetic tunnel junction.

[0061] In some embodiments, the magnetic tunnel junction device also includes a substrate layer 400, and the two ends of the first electrode layer 100 along its length direction are symmetrically arranged on both sides of the width direction of the second electrode layer 200, and the portion of the first electrode layer 100 located between the two ends is stacked above the second electrode layer 200, and the two ends are stacked on the substrate layer 400.

[0062] In some embodiments, the magnetic tunnel junction device also includes a substrate layer 400, and the two ends of the second electrode layer 200 along its length direction are symmetrically arranged on both sides of the width direction of the first electrode layer 100, and the portion of the second electrode layer 200 located between the two ends is stacked above the first electrode layer 100, and the two ends are stacked on the substrate layer 400.

[0063] By symmetrically arranging the two ends of the first electrode layer 100 along its length direction on both sides of the width direction of the second electrode layer 200, and symmetrically arranging the two ends of the second electrode layer 200 along its length direction on both sides of the width direction of the first electrode layer 100, a vertical crossing design of the first electrode layer 100 and the second electrode layer 200 is realized.

[0064] The thickness of the tunneling barrier layer 300 may be 3-5 nm. The ultra-thin tunneling barrier layer 300 acts as an insulating barrier, but under a certain bias voltage, it allows electrons to tunnel and form a tunneling current.

[0065] In some embodiments, the magnetic tunnel junction device also includes a magnetic source, which is used to apply a magnetic field to the magnetic tunnel junction; and the magnetic field direction of the magnetic source is configured to be able to control the direction of the switchable magnetic moment relative to the needle-shaped magnetic moment, and the magnetic field strength of the magnetic source is configured to be able to control the on-off state of the photon signal generated by the magnetic tunnel junction device.

[0066] In some embodiments, the first electrode layer 100 is a PtMn / Co material layer, the tunneling barrier layer 300 is a MgO material layer, and the second electrode layer 200 is a Co material layer.

[0067] like Figure 1A As shown, a schematic diagram of a simulated plasma light source based on the magnetic tunnel junction of the above-mentioned PtMn / Co, MgO, and Co is shown. Due to the antiferromagnetic / ferromagnetic exchange bias effect, the first electrode layer 100 made of PtMn / Co and having a needle-shaped magnetic moment is grounded. The ultra-thin tunneling barrier layer 300 made of MgO acts as an insulating barrier, and the second electrode layer 200 made of Co on the top acts as a free layer and has a switchable magnetic moment corresponding to the external magnetic field.

[0068] like Figure 1B , which shows a cross-sectional schematic diagram of a magnetic tunnel junction device provided by an embodiment of the present application. Under a specific bias voltage, electrons can inelastically tunnel through the ultra-thin tunnel barrier layer 300, and the energy of the electrons before and after the tunneling process is not conserved, and the lost energy quanta can be externally coupled as photons, proton modes or phonons.

[0069] like Figure 2 As shown, the spin tunneling of the magnetic tunnel junction is illustrated from the perspective of state density.

[0070] in, Figure 2 As shown in a, when the magnetization direction of the first electrode layer 100 is parallel to the magnetization direction of the second electrode layer 200 , spin-up and spin-down electrons pass through the tunnel barrier layer 300 and occupy sub-bands having the same spin direction.

[0071] in, Figure 2 FIG. 2 b shows that when the magnetization direction of the first electrode layer 100 is opposite to that of the second electrode layer 200 , the electron spins are misaligned, and the tunnel current passing through the tunnel barrier layer 300 is greatly reduced.

[0072] in, Figure 2 FIG. 3 c shows the corresponding energy band diagram of spin-dependent tunneling when the magnetization direction of the first electrode layer 100 and the magnetization direction of the second electrode layer 200 are parallel.

[0073] in, Figure 2 d in FIG. 1 shows a corresponding energy band diagram of spin-dependent tunneling when the magnetization direction of the first electrode layer 100 and the magnetization direction of the second electrode layer 200 are opposite.

[0074] In some further embodiments, the first electrode layer 100 is an Al material layer, the tunneling barrier layer 300 is an AlOx material layer, and the second electrode layer 200 is a PrCaMnO3 material layer.

[0075] like Figure 3As shown, a proton switch based on Al, AlOx, and PrCaMnO3 magnetic tunnel junction is shown. Under the conditions of a constant voltage of 0.5V and a temperature of 10K, the measured tunnel current is a function of the magnetic field strength from -1.5T to 1.5T. Its preliminary results show that when the magnetization direction of the first electrode layer 100 and the magnetization direction of the second electrode layer 200 are switched from parallel to opposite, its switching ratio is very large, exceeding 6 orders of magnitude, and can be used as a spin valve, which can be used as an ideal candidate device for high-density magnetic recording.

[0076] In some other embodiments, the first electrode layer 100 is a CrI3 material layer, the tunneling barrier layer 300 is an AlOx material layer, and the second electrode layer 200 is an Al material layer.

[0077] like Figure 4A As shown, it shows the exploration of the gating effect of the magnetic phase change by irradiating a femtosecond laser with a wavelength of 900nm, which shows the generation of the SHG signal, by converting two photons of the same frequency into one photon twice the fundamental frequency. Since the SHG signal is very sensitive to the breaking of inversion symmetry, the magnetic phase change can be determined by the SHG signal.

[0078] like Figure 4B As shown, it is shown that the magnetic phase of the CrI3-based double-layer film can be switched under different temperatures and external magnetic fields.

[0079] In some embodiments, the electrode layer and the magnetic source include complementary metal oxide semiconductor compatible materials.

[0080] Another object of an embodiment of the present application is to provide a plasma modulator, which includes the magnetic tunnel junction device as above.

[0081] The beneficial effects of the plasma modulator provided in the embodiment of the present application compared with the prior art are consistent with the beneficial effects of the magnetic tunnel junction device provided in the embodiment of the present application compared with the prior art, and will not be repeated here.

[0082] Another object of the embodiments of the present application is to provide an information storage device, which includes the magnetic tunnel junction device as above; or, the information storage device includes the plasma modulator as above.

[0083] The beneficial effects of the information storage device provided in the embodiment of the present application compared with the prior art are consistent with the beneficial effects of the magnetic tunnel junction device provided in the embodiment of the present application compared with the prior art, and will not be repeated here.

[0084] Alternatively, the beneficial effects of the information storage device provided in the present application compared to the prior art are consistent with the beneficial effects of the plasma modulator provided in the present application compared to the prior art, and will not be repeated here.

[0085] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A magnetic tunnel junction device, characterized in that: It comprises a first electrode layer (100), a second electrode layer (200) and a tunneling barrier layer (300) which are stacked; The first electrode layer (100) is magnetic, the magnetic moment of the first electrode is a needle-shaped magnetic moment, and the first electrode layer (100) is grounded; The second electrode layer (200) has magnetism, the magnetic moment of the second electrode is configured as a switchable magnetic moment, and the second electrode layer (200) and the first electrode layer (100) are biased and electrically connected; Furthermore, the first electrode layer (100) and the second electrode layer (200) are vertically crossed and stacked, and the tunneling barrier layer (300) is sandwiched between the crossing area of ​​the first electrode layer (100) and the second electrode layer (200).

2. The magnetic tunnel junction device according to claim 1, characterized in that: The magnetic tunnel junction device further comprises a base layer (400); The two ends of the first electrode layer (100) along its length direction are symmetrically arranged on both sides of the width direction of the second electrode layer (200), and the part of the first electrode layer (100) located between the two ends is stacked below the second electrode layer (200), and the two ends are stacked on the base layer (400).

3. The magnetic tunnel junction device according to claim 1, characterized in that: The magnetic tunnel junction device further comprises a base layer (400); The two ends of the second electrode layer (200) along its length direction are symmetrically arranged on both sides of the width direction of the first electrode layer (100), and the part of the second electrode layer (200) located between the two ends is stacked above the first electrode layer (100), and the two ends are stacked on the base layer (400).

4. The magnetic tunnel junction device according to any one of claims 1 to 3, characterized in that: The magnetic tunnel junction device further comprises a magnetic source, and the magnetic source is used to apply a magnetic field to the magnetic tunnel junction; Furthermore, the magnetic field direction of the magnetic source is configured to be able to control the direction of the switchable magnetic moment relative to the needle-shaped magnetic moment, and the magnetic field strength of the magnetic source is configured to be able to control the on-off state of the photon signal generated by the magnetic tunnel junction device.

5. The magnetic tunnel junction device according to claim 4, characterized in that: The first electrode layer (100) is a PtMn / Co material layer, the tunneling barrier layer (300) is a MgO material layer, and the second electrode layer (200) is a Co material layer.

6. The magnetic tunnel junction device according to claim 4, characterized in that: The first electrode layer (100) is a CrI3 material layer, the tunneling barrier layer (300) is an AlOx material layer, and the second electrode layer (200) is an Al material layer.

7. The magnetic tunnel junction device according to claim 4, characterized in that: The first electrode layer (100) is an Al material layer, the tunneling barrier layer (300) is an AlOx material layer, and the second electrode layer (200) is a PrCaMnO3 material layer.

8. The magnetic tunnel junction device according to claim 4, characterized in that: The electrode layers and the magnetic source include complementary metal oxide semiconductor compatible materials.

9. A plasma modulator, characterized in that: Comprising the magnetic tunnel junction device as claimed in any one of claims 1 to 8.

10. An information storage device, characterized in that: A magnetic tunnel junction device as claimed in any one of claims 1 to 8; Alternatively, comprising a plasma modulator as claimed in claim 9.

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