一种用于电子级多晶硅硅芯的清洗方法
By employing a multi-step cleaning method and high-purity treatment, the problems of contamination and residue in silicon core cleaning have been solved, achieving efficient removal of impurities and improving the quality and production efficiency of polycrystalline silicon cores.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- PARAMATIC IND AUTOMATION (SHANGHAI) CO LTD
- Filing Date
- 2024-12-16
- Publication Date
- 2026-07-17
AI Technical Summary
Existing silicon core cleaning processes suffer from problems such as poor cleaning effect, contamination during manual wiping, metal ion contamination in alkaline solutions, and residues of degreasing agents and acids, which affect the quality and yield of polysilicon.
A multi-step cleaning method is adopted, which includes plasma cleaning, ultrasonic cleaning, ozone degreasing, mixed acid pickling, hydrofluoric acid pickling, megasonic cleaning, and high-purity water rinsing. Combined with negative pressure and air curtain to prevent gas leakage, high-purity water and high-purity nitrogen are used to ensure the cleaning effect.
It effectively removes fine particles, metal contaminants, and organic matter from the surface of silicon cores, improves surface oxidation, yellowing, blackening, and acid spots, enhances the quality and yield of polycrystalline silicon products, and reduces energy consumption.
Smart Images
Figure CN119747292B_ABST