Characterization device and method for dynamic threshold voltage of power field effect transistor

Abstract

The invention belongs to the technical field of electronic circuits, and provides a characterization device and method for dynamic threshold voltage of a power field effect transistor, and the characterization device comprises a voltage stress application circuit, a to-be-tested device module, a control signal output circuit, a conduction current application circuit, and a data collection module. The voltage stress applying circuit is connected with the to-be-tested device module; the to-be-tested device module is connected with the conduction current applying circuit; the control signal output circuit is respectively connected with the voltage stress applying circuit and the conduction current applying circuit; and the data acquisition module is connected with the conduction current applying circuit. Before the drain current is applied to the to-be-measured device, the conduction current is applied to the to-be-measured device through the conduction current applying circuit, so that the to-be-measured device bears current stress and is closer to the working condition of the to-be-measured device in an actual circuit, and the accuracy of dynamic threshold voltage measurement of the to-be-measured device can be improved.

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