Reconstructed wafer, wafer reconstruction method and display panel preparation method
By dividing the small-sized wafer to be divided into multiple wafers and bonding it to a large-sized carrier, the wafer reconstruction is realized, solving the problem of weak application of epitaxial growth technology under larger sizes, meeting the needs of advanced process processes, and improving the yield of the display panel.
CN119767908APending Publication Date: 2025-04-04西湖烟山科技(杭州)有限公司
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Patent Information
- Application Number
- CN202411948685.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-27
- Publication Date
- 2025-04-04
AI Technical Summary
Technical Problem
At larger sizes, the application of epitaxial growth technology in the field of light emitting diodes is relatively weak, limiting the technological progress in the field.
Method used
By dividing the small-sized wafer to be divided into multiple wafers and bonding its epitaxial structure layer with a larger-sized carrier, the wafer reconstruction is realized and a large-sized reconstruction wafer that meets the requirements of advanced process processes is formed.
Benefits of technology
The small-size wafer is reconstructed into large-size wafers, meeting the needs of advanced process processes, and improving the yield of the display panel, reducing bubble formation, and improving bonding yield.
✦ Generated by Eureka AI based on patent content.
Abstract
The embodiment of the present invention discloses a reconstructed wafer, a wafer reconstruction method and a method for preparing a display panel. By dividing a smaller wafer to be divided into multiple chips, the side of the epitaxial structure layer of the multiple chips away from the first substrate is bonded to a larger carrier to obtain a reconstructed wafer, and the small wafer to be divided can be reconstructed into a large reconstructed wafer, so that the size of the reconstructed wafer can meet the requirements of advanced process technology. In addition, the technical solution of the present invention, by bonding the side of the epitaxial structure layer of the chip away from the first substrate to the carrier, due to the thin thickness of the epitaxial structure layer, compared with the method of bonding the first substrate to the epitaxial structure layer, it is not easy to form bubbles during bonding, which is conducive to improving the bonding yield, and then improving the yield of the display panel prepared by the reconstructed wafer.
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