Integrated micro-display chip structure and preparation method

Abstract

The present application discloses an integrated micro display chip structure, comprising a conductive silicon substrate; an insulating layer is provided on the upper surface of the conductive silicon substrate; a first window is provided on one side of the insulating layer; a wiring line is provided above the insulating layer; the wiring line is interconnected with the conductive silicon substrate through the first window on the insulating layer; a Micro LED chip is provided above the wiring line; the electrode of the Micro LED chip is interconnected with the wiring line by bonding; a transparent insulating layer is provided above the Micro LED chip, the wiring line and the insulating layer; a second window is provided on the transparent insulating layer, and part of the wiring line is exposed through the second window; a first electrode is provided in the second window, and is interconnected with the wiring line through the second window; a second electrode is provided on the lower surface of the conductive silicon substrate; the present application solves the problems of complex microchip structure and preparation method and high production cost in the prior art, meets the production needs of enterprises, and is conducive to enterprise development.

Description

Technical Field

[0001] The invention relates to the technical field of LED display, and in particular to an integrated micro display chip structure and a preparation method thereof. Background Art

[0002] Modern society has entered the information age and is developing towards intelligence. Display is a key link in realizing information exchange and intelligence. Among the many display technologies currently available, Micro-LED display technology is considered to be a disruptive next-generation display technology. Micro-LED display technology is a self-luminous display technology that integrates arrayed micron-level LED light-emitting devices (μLED) on an active addressing drive substrate to achieve individual control and lighting to output display images. Micro-LED has the advantages of low power consumption, high brightness, high color saturation, high response speed, long life and high efficiency. It is small in size and highly flexible, and can be applied to any existing display application from small to large sizes.

[0003] Currently, there are mainly the following categories of full-color display: (1) Liquid crystal (LCD) full-color display technology: full-color display is achieved by matching a color filter with a white light backlight. This display is a passive light-emitting display with low display efficiency and long response time. At the same time, it is difficult to achieve the Micro-LED level; (2) OLED full-color display technology: it is an active light-emitting technology that can achieve a higher contrast, but the organic matter in OLED is unstable and the brightness is not high enough; (3) Three-color integrated full-color display technology: full color is achieved by integrating blue light Micro-LED, green light Micro-LED and red light Micro-LED as RGB three colors; (4) Monolithic integrated full-color display technology: there are two solutions for monolithic integrated full-color display. The first is monolithic integration technology + color conversion technology, that is, a monolithic ultraviolet / blue light epitaxial wafer is prepared into a monochrome Micro-LED, and then on the Micro The first is the red, green and blue light-emitting medium covered on the upper layer of cro-LED, thus achieving full color; the second is the monolithic integrated vertical stacking full-color display technology, which stacks the three colors of Micro-LED vertically in one pixel position to achieve full color. For example, the patent "A method for preparing a quantum dot full-color micro-display device" proposes a solution to achieve full color: full-color micro-display is achieved through quantum dots, and three masks with specific designs are used as masks in turn to coat and cure the resin glue containing red and green quantum dot materials on the corresponding chips on the blue light Micro-LED chip array, forming a patterned arrangement of red, green and blue pixels, and avoiding mutual interference between the red and green glue layers, thereby achieving high-precision full-color display of Micro-LED. For example, the patent "A manufacturing process for a full-color display chip and a semiconductor chip" proposes another solution to achieve full color: including a substrate supporting an array of pixel drivers, the substrate being provided with multiple pairs of anode contact points of the pixel driver and cathode contact points of the pixel driver; two or more layers are stacked on top of the substrate and the pixel driver, each layer comprising a micro-LED light-emitting structure, each layer of the LED light-emitting structure having a cathode electrode connected to the anode contact point and an anode electrode connected to the cathode contact point; the LED light-emitting structures between adjacent layers are stacked up and down; it has the advantages of low pixel density, large light-emitting area, high interconnection density and low equipment investment.The patent "LED full-color display array structure and preparation method" proposes another solution to achieve full color, including the following steps: according to the LED array arranged periodically at preset intervals, array design for the three colors of blue, green and red is performed; preparing LED blue light chip array substrate, LED green light chip array substrate and LED red light chip array substrate; transferring the LED green light chip array and LED red light chip array to the LED blue light chip array substrate, integrating the blue light, green light and red light arrays together, realizing wafer-level transfer integration, and forming an LED full-color display array structure; through the overall layout and array staggered design, the wafer-level blue light chip array, green light chip array and red light chip array are bonded together to realize the integration of the three color arrays, and finally packaged to achieve full-color display drive, solving the current situation of high difficulty, high cost and low yield in the preparation of mini LED and Micro-LED array displays.

[0004] However, the above-mentioned microchip structure, structure and manufacturing method are relatively complicated. Based on this, an integrated microdisplay chip structure with a simpler structure and lower manufacturing cost and a corresponding preparation method are proposed. Summary of the invention

[0005] The purpose of the present invention is to provide an integrated microdisplay chip structure and a preparation method, which simplifies the microchip structure, reduces the production cost, and better meets the needs of enterprises.

[0006] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0007] An integrated micro-display chip structure includes a conductive silicon substrate;

[0008] An insulating layer is provided on the upper surface of the conductive silicon substrate;

[0009] A first window is provided on one side of the insulating layer;

[0010] A wiring circuit is arranged above the insulating layer;

[0011] The wiring line is interconnected with the conductive silicon substrate through a first window on the insulating layer;

[0012] A Micro LED chip is arranged above the wiring line;

[0013] The electrodes of the Micro LED chip are interconnected with the wiring circuits by bonding;

[0014] A transparent insulating layer is provided on the Micro LED chip, the wiring line and the insulating layer;

[0015] A second window is provided on the transparent insulating layer, and a portion of the wiring circuit is exposed through the second window;

[0016] A first electrode is disposed in the second window and is interconnected with a wiring circuit through the second window;

[0017] A second electrode is disposed on the lower surface of the conductive silicon substrate.

[0018] Preferably, the wiring circuit includes a first wiring circuit and a second wiring circuit; one end of the first wiring circuit is interconnected with the conductive silicon substrate through a first window, and the other end is interconnected with the Micro LED chip through an electrode under the Micro LED chip; one end of the second wiring circuit is interconnected with the Micro LED chip through the electrode of the Micro LED chip, and the other end is interconnected with the first electrode through the second window.

[0019] Preferably, the wiring circuit includes a first wiring circuit and a second wiring circuit; one end of the first wiring circuit is interconnected with the conductive silicon substrate through a first window, and the other end is interconnected with the Micro LED chip through an electrode of the Micro LED chip; the second wiring circuit is interconnected with the first electrode through a second window; a third window is also provided on the transparent insulating layer; the first electrode is interconnected with the electrode above the Micro LED chip through the third window.

[0020] In a preferred solution, the conductive silicon substrate is an N-doped or P-doped silicon plate, the resistivity of which is controlled within 0.00001-1Ω·cm, and the thickness is controlled within 50-600um.

[0021] In a preferred embodiment, the insulating layer is made of inorganic material and has a thickness of 0.5-5 um.

[0022] In a preferred solution, the wiring line is a metal laminate material, the bottom layer is an ohmic contact adhesion layer, the middle layer is a buffer layer, and the top layer is an etched contact layer.

[0023] Preferably, the Micro LED chip is a flip-chip structure light-emitting device, whose positive and negative electrodes are on the same side of the chip, and are electrically connected to the first wiring line and the second wiring line respectively by high-temperature bonding.

[0024] Preferably, the transparent insulating layer is made of organic material and completely covers the Micro LED chip, with a thickness of 5-30 um.

[0025] In a preferred embodiment, the first electrode and the second electrode are both metal stacks, and the material thereof is one of Cr, Ni, Pt, Ti, Au, Al or an alloy thereof, and the thickness thereof is controlled to be 0.8-3.0 um.

[0026] In addition, the present application also proposes a method for preparing an integrated micro-display chip structure, comprising the following steps:

[0027] S1, providing a conductive silicon substrate;

[0028] S2, forming an insulating layer on the upper surface of the conductive silicon substrate by deposition, photolithography, etching, and degumming;

[0029] S3, making wiring lines on the insulating layer by photolithography, evaporation, and stripping;

[0030] S4, transfers the blue, green and red Micro LED chips to the wiring lines through mass transfer, and then uses reflow soldering to make the electrodes of the Micro LED chips and the metals of the wiring lines mutually dissolve to achieve interconnection between the two;

[0031] S5, forming a transparent insulating layer on the insulating layer, the wiring line, and the Micro LED chip by spin coating, and then partially removing the insulating protective layer on the wiring line by photolithography, etching, and degumming to expose the wiring line;

[0032] S6, forming a first electrode on the transparent insulating layer by photolithography, evaporation, and stripping;

[0033] S7, a second electrode is fabricated on the lower surface of the conductive silicon substrate by photolithography, vapor deposition, and stripping to complete the fabrication of the entire structure.

[0034] Due to the application of the above technical solution, the beneficial effects of the present application compared with the prior art are:

[0035] The present application provides an integrated micro-display chip structure and a preparation method, which simplifies the chip structure, designs and layouts the chip structure and provides a corresponding preparation method, and simplifies the integration of RGB three-color chips, so that the chip structure is simpler and the production cost is lower, which solves the problems of complex microchip structure and preparation method and high production cost in the prior art, meets the production needs of enterprises well, and is conducive to improving the competitiveness of enterprises. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0037] Figure 1It is a structural schematic diagram of an integrated micro display chip structure of the present invention;

[0038] Figure 2 It is a schematic structural diagram of another integrated micro display chip structure of the present invention;

[0039] Figure 3 is a flow chart of the preparation method of the present invention;

[0040] Figure 4 Schematic diagram of the chip structure of step S1 in the preparation method of the present invention in Example 3;

[0041] Figure 5 Schematic diagram of the chip structure of step S2 in the preparation method of the present invention in Example 3;

[0042] Figure 6 Schematic diagram of the chip structure of step S3 in the preparation method of the present invention in Example 3;

[0043] Figure 7 Schematic diagram of the chip structure of step S4 in the preparation method of the present invention in Example 3;

[0044] Figure 8 Schematic diagram of the chip structure in step S5 of the preparation method of the present invention in Example 3;

[0045] Fig. 9 Schematic diagram of the chip structure of step S6 in the preparation method of the present invention in Example 3;

[0046] Fig.10 Schematic diagram of the chip structure of step S7 in the preparation method of the present invention in Example 3

[0047] Among them, 1. conductive silicon substrate; 2. insulating layer; 3. first window; 4. wiring line; 5. Micro LED chip; 6. transparent insulating layer; 7. second window; 8. first electrode; 9. second electrode; 10. third window; 41. first wiring line; 42. second wiring line; 51. electrode. DETAILED DESCRIPTION

[0048] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0049] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0050] In the present application, the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings. These terms are mainly used to better describe the present invention and its embodiments, and are not used to limit the indicated devices, elements or components to have a specific orientation, or to be constructed and operated in a specific orientation.

[0051] In addition, some of the above terms may be used to express other meanings in addition to indicating orientation or positional relationship. For example, the term "on" may also be used to express a certain dependency or connection relationship in some cases. For those skilled in the art, the specific meanings of these terms in the present invention can be understood according to specific circumstances.

[0052] In addition, the terms "installed", "set", "provided with", "connected", "connected", and "socketed" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, elements, or components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0053] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0054] Embodiment 1

[0055] See also Figure 1The present application provides an integrated micro display chip structure, including a conductive silicon substrate 1; the conductive silicon substrate 1 is an N-doped or P-doped silicon plate, the resistivity of which is controlled at 0.00001-1Ω·cm, the lower the better, the thickness is controlled at 50-600um, the preferred thickness is 100-450um, and the more preferred thickness is 120-150um;

[0056] An insulating layer 2 is provided on the upper surface of the conductive silicon substrate 1; the insulating layer 2 is an inorganic material, such as SiO2, Si3N4, TiO2, Al2O3, etc., and the thickness is controlled to be 0.5-5um, preferably 1-4um, and more preferably 2-3um;

[0057] A first window 3 is provided on one side of the insulating layer 2, which is required to penetrate from the top of the insulating layer 2 to the upper surface of the conductive silicon substrate 1, and its shape can be circular, elliptical, square, diamond, etc., and its aperture size is required to gradually increase from the bottom surface to the top surface;

[0058] A wiring line 4 is arranged above the insulating layer 2; the wiring line 4 is a metal laminate material, the bottom layer is an ohmic contact adhesion layer, which can be a metal material such as Ni, Cr, etc., the middle layer is a buffer layer, which can be a metal material such as Al, Au, etc., and the top layer is an etching contact layer, which can be a metal material such as Ti, Pt, Ni, Cr, etc., which is interconnected through the first window 3 and the upper surface of the conductive silicon base, thereby realizing electrical connection between the two;

[0059] The wiring line 4 is interconnected with the conductive silicon substrate 1 through the first window 3 on the insulating layer 2;

[0060] A Micro LED chip 5 is arranged above the wiring line 4; the Micro LED chip 5 is a flip-chip structure light-emitting device, and its positive and negative electrodes 51 are on the same side of the chip, and the positive and negative electrodes 51 are respectively interconnected with the first wiring line 41 and the second wiring line 42 by high-temperature bonding to achieve electrical connection;

[0061] The electrodes 51 of the Micro LED chip 5 are interconnected with the wiring circuit 4 by bonding;

[0062] A transparent insulating layer 6 is provided on the Micro LED chip 5, the wiring line 4 and the insulating layer 2; the transparent insulating layer 6 is an organic material, such as PI, epoxy resin, silicone, etc., and completely covers the Micro LED chip 5, and the thickness is controlled to be 5-30um, preferably 8-20um, and more preferably 10-15um;

[0063] The transparent insulating layer 6 is provided with a second window 7, and a part of the wiring line 4 is exposed through the second window 7; the second window 7 is required to penetrate from the top of the transparent insulating layer 6 to the second wiring line 42, and its shape can be circular, elliptical, square, diamond, etc., and its aperture size is required to gradually increase from the bottom surface to the top surface;

[0064] A first electrode 8 is disposed in the second window 7 and is interconnected with the wiring line 4 through the second window 7; the first electrode 8 is a metal laminate, and its material is a metal material such as Cr, Ni, Pt, Ti, Au, Al or an alloy thereof, but its top layer material can only be Au or Al, with a thickness of 0.8-3.0 um, and is interconnected with the second wiring line 42 through the second window 7, thereby realizing electrical connection between the two;

[0065] A second electrode 9 is provided on the lower surface of the conductive silicon substrate 1. The second electrode 9 is located on the lower surface of the conductive silicon substrate 1 and is a metal stack. Its material is Cr, Ni, Pt, Ti, Au, Al, Sn, In, Ni and other metal materials or their alloys, with a thickness of 0.8-3.0um.

[0066] Among them, the wiring line 4 includes a first wiring line 41 and a second wiring line 42; one end of the first wiring line 41 is interconnected with the conductive silicon substrate 1 through the first window 3, and the other end is interconnected with the Micro LED chip 5 through the electrode 51 under the Micro LED chip 5; one end of the second wiring line 42 is interconnected with the Micro LED chip 5 through the electrode 51 of the Micro LED chip 5, and the other end is interconnected with the first electrode 8 through the second window 7.

[0067] Embodiment 2

[0068] See also Figure 2 The present application also provides an integrated micro display chip structure, including a conductive silicon substrate 1; the conductive silicon substrate 1 is an N-doped or P-doped silicon plate, the resistivity of which is controlled at 0.00001-1Ω·cm, the lower the better, the thickness is controlled at 50-600um, the preferred thickness is 100-450um, and the more preferred thickness is 120-150um;

[0069] An insulating layer 2 is provided on the upper surface of the conductive silicon substrate 1; the insulating layer 2 is an inorganic material, such as SiO2, Si3N4, TiO2, Al2O3, etc., and the thickness is controlled to be 0.5-5um, preferably 1-4um, and more preferably 2-3um;

[0070] A first window 3 is provided on one side of the insulating layer 2, which is required to penetrate from the top of the insulating layer 2 to the upper surface of the conductive silicon substrate 1, and its shape can be circular, elliptical, square, diamond, etc., and its aperture size is required to gradually increase from the bottom surface to the top surface;

[0071] A wiring line 4 is arranged above the insulating layer 2; the wiring line 4 is a metal laminate material, the bottom layer is an ohmic contact adhesion layer, which can be a metal material such as Ni, Cr, etc., the middle layer is a buffer layer, which can be a metal material such as Al, Au, etc., and the top layer is an etching contact layer, which can be a metal material such as Ti, Pt, Ni, Cr, etc., which is interconnected through the first window 3 and the upper surface of the conductive silicon base, thereby realizing electrical connection between the two;

[0072] The wiring line 4 is interconnected with the conductive silicon substrate 1 through the first window 3 on the insulating layer 2;

[0073] A Micro LED chip 5 is arranged above the wiring line 4; the Micro LED chip 5 is a flip-chip structure light-emitting device, and its positive and negative electrodes 51 are on the same side of the chip, and the positive and negative electrodes 51 are respectively interconnected with the first wiring line 41 and the second wiring line 42 by high-temperature bonding to achieve electrical connection;

[0074] The electrodes 51 of the Micro LED chip 5 are interconnected with the wiring circuit 4 by bonding;

[0075] A transparent insulating layer 6 is provided on the Micro LED chip 5, the wiring line 4 and the insulating layer 2; the transparent insulating layer 6 is an organic material, such as PI, epoxy resin, silicone, etc., and completely covers the Micro LED chip 5, and the thickness is controlled to be 5-30um, preferably 8-20um, and more preferably 10-15um;

[0076] The transparent insulating layer 6 is provided with a second window 7, and a part of the wiring line 4 is exposed through the second window 7; the second window 7 is required to penetrate from the top of the transparent insulating layer 6 to the second wiring line 42, and its shape can be circular, elliptical, square, diamond, etc., and its aperture size is required to gradually increase from the bottom surface to the top surface;

[0077] A first electrode 8 is disposed in the second window 7 and is interconnected with the wiring line 4 through the second window 7; the first electrode 8 is a metal laminate, and its material is a metal material such as Cr, Ni, Pt, Ti, Au, Al or an alloy thereof, but its top layer material can only be Au or Al, with a thickness of 0.8-3.0 um, and is interconnected with the second wiring line 42 through the second window 7, thereby realizing electrical connection between the two;

[0078] A second electrode 9 is provided on the lower surface of the conductive silicon substrate 1. The second electrode 9 is located on the lower surface of the conductive silicon substrate 1 and is a metal stack. Its material is Cr, Ni, Pt, Ti, Au, Al, Sn, In, Ni and other metal materials or their alloys, with a thickness of 0.8-3.0um.

[0079] Among them, the wiring line 4 includes a first wiring line 41 and a second wiring line 42; one end of the first wiring line 41 is interconnected with the conductive silicon substrate 1 through the first window 3, and the other end is interconnected with the Micro LED chip 5 through the electrode 51 of the Micro LED chip 5; the second wiring line 42 is interconnected with the first electrode 8 through the second window 7; a third window 10 is also provided on the transparent insulating layer 6; the first electrode 8 is interconnected with the electrode 51 above the Micro LED chip 5 through the third window 10.

[0080] Embodiment 3

[0081] See also Figure 3-9 In addition, the present application also proposes a method for preparing an integrated micro-display chip structure, comprising the following steps:

[0082] S1, providing a conductive silicon substrate 1;

[0083] S2, forming an insulating layer 2 on the upper surface of the conductive silicon substrate 1 by deposition, photolithography, etching, and degumming;

[0084] S3, manufacturing a wiring line 4 on the insulating layer 2 by photolithography, evaporation, and stripping;

[0085] S4, transferring the blue, green and red Micro LED chips 5 to the wiring line 4 by mass transfer, and then making the metals of the electrodes 51 of the Micro LED chips 5 and the wiring line 4 mutually dissolve by reflow soldering to realize the interconnection between the two;

[0086] S5, a transparent insulating layer 6 is formed on the insulating layer 2, the wiring line 4, and the Micro LED chip 5 by spin coating, and then the insulating protective layer on the wiring line 4 is partially removed by photolithography, etching, and degumming to expose the wiring line 4;

[0087] S6, forming a first electrode 8 on the transparent insulating layer 6 by photolithography, evaporation, and stripping;

[0088] S7, manufacturing the second electrode 9 on the lower surface of the conductive silicon substrate 1 by photolithography, evaporation, and stripping, thereby completing the manufacturing of the entire structure.

[0089] The present application provides an integrated micro-display chip structure and a preparation method, which simplifies the chip structure, designs and layouts the chip structure and provides a corresponding preparation method, and simplifies the integration of RGB three-color chips, so that the chip structure is simpler and the production cost is lower, which solves the problems of complex microchip structure and preparation method and high production cost in the prior art, meets the production needs of enterprises well, and is conducive to improving the competitiveness of enterprises.

[0090] Finally, it should be noted that the above are only preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. An integrated micro display chip structure, characterized in that: including a conductive silicon substrate; An insulating layer is provided on the upper surface of the conductive silicon substrate; A first window is provided on one side of the insulating layer; A wiring circuit is arranged above the insulating layer; The wiring line is interconnected with the conductive silicon substrate through a first window on the insulating layer; A Micro LED chip is arranged above the wiring line; The electrodes of the Micro LED chip are interconnected with the wiring circuits by bonding; A transparent insulating layer is provided on the Micro LED chip, the wiring line and the insulating layer; A second window is provided on the transparent insulating layer, and a portion of the wiring circuit is exposed through the second window; A first electrode is disposed in the second window and is interconnected with a wiring circuit through the second window; A second electrode is disposed on the lower surface of the conductive silicon substrate.

2. The integrated micro display chip structure as claimed in claim 1, characterized in that: The wiring line includes a first wiring line and a second wiring line; one end of the first wiring line is interconnected with the conductive silicon substrate through the first window, and the other end is interconnected with the Micro LED chip through the electrode under the Micro LED chip; one end of the second wiring line is interconnected with the Micro LED chip through the electrode of the Micro LED chip, and the other end is interconnected with the first electrode through the second window.

3. The integrated micro display chip structure as claimed in claim 1, characterized in that: The wiring line includes a first wiring line and a second wiring line; one end of the first wiring line is interconnected with the conductive silicon substrate through a first window, and the other end is interconnected with the Micro LED chip through an electrode of the Micro LED chip; the second wiring line is interconnected with the first electrode through a second window; a third window is also provided on the transparent insulating layer; the first electrode is interconnected with the electrode above the Micro LED chip through the third window.

4. The integrated micro display chip structure as claimed in claim 1, characterized in that: The conductive silicon substrate is an N-doped or P-doped silicon plate, the resistivity of which is controlled within the range of 0.00001-1Ω·cm, and the thickness of which is controlled within the range of 50-600um.

5. The integrated micro display chip structure as claimed in claim 1, characterized in that: The insulating layer is made of inorganic material, and the thickness is controlled at 0.5-5um.

6. The integrated micro display chip structure as claimed in claim 1, characterized in that: The wiring line is made of metal stacked material, the bottom layer is an ohmic contact adhesion layer, the middle layer is a buffer layer, and the top layer is an etched contact layer.

7. The integrated micro display chip structure as claimed in claim 2, characterized in that: The MicroLED chip is a flip-chip structure light-emitting device, wherein the positive and negative electrodes are on the same side of the chip, and the positive and negative electrodes are respectively interconnected with the first wiring line and the second wiring line by high-temperature bonding to achieve electrical connection. catch.

8. The integrated micro display chip structure as claimed in claim 1, characterized in that: The transparent The insulating layer is an organic material and completely covers the Micro LED chip, with a thickness controlled at 5-30um.

9. The integrated micro display chip structure as claimed in claim 1, characterized in that: The first The electrode and the second electrode are both metal stacks, and the material is one of Cr, Ni, Pt, Ti, Au, Al The thickness of the alloy is controlled at 0.8-3.0um.

10. A method for preparing an integrated micro-display chip structure, characterized in that: The steps include: S1, providing a conductive silicon substrate; S2, forming an insulating layer on the upper surface of the conductive silicon substrate by deposition, photolithography, etching, and degumming; S3, making wiring lines on the insulating layer by photolithography, evaporation, and stripping; S4, transfers the blue, green and red Micro LED chips to the wiring lines through mass transfer, and then uses reflow soldering to make the metal of the Micro LED chip electrodes and the wiring lines mutually dissolve to achieve interconnection between the two; S5, forming a transparent insulating layer on the insulating layer, the wiring line, and the Micro LED chip by spin coating, and then partially removing the insulating protective layer on the wiring line by photolithography, etching, and degumming to expose the wiring line; S6, forming a first electrode on the transparent insulating layer by photolithography, evaporation, and stripping; S7, a second electrode is fabricated on the lower surface of the conductive silicon substrate by photolithography, vapor deposition, and stripping to complete the fabrication of the entire structure.

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