Light-emitting device and preparation method thereof

Abstract

The invention discloses a light-emitting device and a preparation method thereof, and the light-emitting device comprises a substrate which comprises a light-emitting area and a non-light-emitting area located on at least one side of the light-emitting area, and the non-light-emitting area comprises a signal transmission area; the light-emitting device layer is located in the light-emitting area of the substrate; the first electrode signal transmission layer and the second electrode signal transmission layer are located in the signal transmission area of the substrate; the insulating layer is located between the first electrode signal transmission layer and the second electrode signal transmission layer; wherein the first electrode signal transmission layer, the insulating layer and the second electrode signal transmission layer are sequentially arranged in the direction away from the substrate; the first electrode signal transmission layer and the second electrode signal transmission layer are used for transmitting electric signals to different electrode layers in the light-emitting device layer respectively. According to the technical scheme, the lap joint area of the electrode layer and the electrode lead is increased, the problem of high local current is solved, the service life of the light-emitting device is prolonged, and the reliability of the light-emitting device is improved.

Description

Technical Field

[0001] The embodiments of the present invention relate to the technical field of light-emitting devices, and in particular to a light-emitting device and a method for preparing the same. Background Art

[0002] OLED (Organic Light Emitting Diodes) refers to devices that can emit light through carrier injection and recombination when organic semiconductor materials and luminescent materials are driven by an electric field. They can be used in lighting and display technology and have excellent characteristics such as self-luminescence, low power consumption, fast response speed, high luminous efficiency and simple process.

[0003] At present, the OLED light-emitting structure mainly includes an anode, a light-emitting layer and a cathode. Each film layer is formed by evaporation. The anode and the cathode are connected to an external circuit through electrode leads, so that the OLED light-emitting structure is controlled by the external circuit. However, since the electrode lead connected to the anode and the electrode lead connected to the cathode are usually arranged horizontally side by side in the signal transmission area on the surface of the substrate, and since the electrode lead connected to the anode occupies part of the signal transmission area, the number of electrode leads connected to the cathode is small, which limits the overlap area of ​​the cathode and cathode leads, causing the problem of high local current, resulting in serious local heating, affecting the life and reliability of the light-emitting device. Therefore, how to increase the overlap area between the electrode layer and the electrode lead, improve the problem of high local current, and improve the life and reliability of the light-emitting device has become a technical problem that needs to be solved urgently. Summary of the invention

[0004] The embodiment of the present invention provides a light emitting device and a method for manufacturing the same, so as to increase the overlapping area between the electrode and the electrode lead, improve the problem of high local current, and improve the life and reliability of the light emitting device.

[0005] According to one aspect of the present invention, there is provided a light emitting device, comprising:

[0006] A substrate, comprising a light-emitting area and a non-light-emitting area located at least on one side of the light-emitting area; wherein the non-light-emitting area comprises a signal transmission area;

[0007] A light-emitting device layer, located in the light-emitting area of ​​the substrate;

[0008] A first electrode signal transmission layer and a second electrode signal transmission layer are located in a signal transmission area of ​​the substrate;

[0009] an insulating layer, located between the first electrode signal transmission layer and the second electrode signal transmission layer, and used to isolate the first electrode signal transmission layer from the second electrode signal transmission layer;

[0010] Among them, along the direction away from the substrate, the first electrode signal transmission layer, the insulating layer and the second electrode signal transmission layer are arranged in sequence; the first electrode signal transmission layer and the second electrode signal transmission layer are used to transmit electrical signals to different electrode layers in the light-emitting device layer respectively.

[0011] Optionally, the light emitting device layer includes:

[0012] A first electrode layer, located on one side of the substrate;

[0013] a light-emitting layer, located on a side of the first electrode layer away from the substrate;

[0014] A second electrode layer is located on a side of the light-emitting layer away from the substrate;

[0015] Among them, the first electrode signal transmission layer is electrically connected to the first electrode layer, and the first electrode signal transmission layer is used to transmit electrical signals to the first electrode layer; the second electrode signal transmission layer is electrically connected to the second electrode layer, and the second electrode signal transmission layer is used to transmit electrical signals to the second electrode layer.

[0016] Optionally, the light emitting device further includes:

[0017] A first conductive layer is located in the light-emitting area and the signal transmission area of ​​the substrate; wherein the first conductive layer located in the light-emitting area of ​​the substrate is used as the first electrode layer, and the first conductive layer located in the signal transmission area is used as the first electrode signal transmission layer; the first electrode signal transmission layer and the first electrode layer are arranged in the same layer;

[0018] The second conductive layer is located in the light emitting area and the signal transmission area of ​​the substrate, and is located on the side of the first conductive layer away from the substrate; wherein the second conductive layer located in the light emitting area of ​​the substrate is used as the second electrode layer, and the second conductive layer located in the signal transmission area is used as the second electrode signal transmission layer; the second electrode signal transmission layer is arranged on the same layer as the second electrode layer.

[0019] Optionally, the second electrode layer includes an overlapping portion contacting the second electrode signal transmission layer, and the overlapping portion is located in a region adjacent to and overlapping the second electrode layer on a surface of the second electrode signal transmission layer away from the substrate.

[0020] Optionally, the first electrode signal transmission layer includes a plurality of first electrode leads, each of which is electrically connected to the first electrode layer in the light-emitting device layer;

[0021] And / or, the second electrode signal transmission layer includes a plurality of second electrode leads, each of which is electrically connected to the second electrode layer in the light emitting device layer.

[0022] Optionally, the light-emitting region includes a plurality of light-emitting sub-regions;

[0023] The first electrode signal transmission layer includes a plurality of first electrode leads, and the light-emitting device layer in each light-emitting sub-region is electrically connected to at least one first electrode lead;

[0024] The light-emitting device layers in the plurality of light-emitting sub-regions share the second electrode signal transmission layer, or the second electrode signal transmission layer includes a plurality of second electrode leads, and the light-emitting device layer in each light-emitting sub-region is electrically connected to at least one second electrode lead;

[0025] In which, when the light-emitting device layer in each light-emitting sub-region is electrically connected to at least one first electrode lead and the light-emitting device layer in each light-emitting sub-region is electrically connected to at least one second electrode lead, the light-emitting device layers in at least a part of the light-emitting sub-regions are connected to the first electrode lead and the second electrode lead through electrode connecting lines; in two light-emitting sub-regions with different distances to the signal transmission region, the width of the electrode connecting line connected to the light-emitting sub-region that is closer to the signal transmission region is smaller than the width of the electrode connecting line connected to the light-emitting sub-region that is farther away from the signal transmission region.

[0026] Optionally, the surface of the insulating layer away from the substrate includes a plurality of grooves arranged at intervals, and the depth of the grooves is greater than the thickness of the second electrode signal transmission layer;

[0027] The second electrode lead is located between two adjacent grooves, or the second electrode lead is located in the groove.

[0028] According to another aspect of the present invention, a method for preparing a light-emitting device is provided, which is used to prepare the light-emitting device according to any embodiment of the present invention, comprising:

[0029] Providing a substrate; the substrate comprising a light-emitting area and a non-light-emitting area located at least on one side of the light-emitting area; wherein the non-light-emitting area comprises a signal transmission area;

[0030] A light-emitting device layer is formed in the light-emitting area, and a first electrode signal transmission layer, an insulating layer, and a second electrode signal transmission layer are sequentially formed in the signal transmission area; wherein the first electrode signal transmission layer and the second electrode signal transmission layer are respectively used to transmit electrical signals to different electrode layers in the light-emitting device layer, and the insulating layer is used to isolate the first electrode signal transmission layer from the second electrode signal transmission layer.

[0031] Optionally, the light-emitting device layer includes: a first electrode layer located on one side of the substrate; a light-emitting layer located on a side of the first electrode layer away from the substrate; and a second electrode layer located on a side of the light-emitting layer away from the substrate.

[0032] A light emitting device layer is formed in the light emitting area, and a first electrode signal transmission layer, an insulating layer, and a second electrode signal transmission layer are sequentially formed in the signal transmission area, including:

[0033] A first conductive layer is formed in the light-emitting area and the signal transmission area of ​​the substrate; wherein the first conductive layer located in the light-emitting area of ​​the substrate is used as the first electrode layer, and the first conductive layer located in the signal transmission area is used as the first electrode signal transmission layer; the first electrode signal transmission layer is arranged in the same layer as the first electrode layer;

[0034] forming an insulating layer on a side of the first electrode signal transmission layer away from the substrate;

[0035] forming a light-emitting layer on a side of the first conductive layer away from the substrate;

[0036] A second conductive layer is formed on a side of the insulating layer and the light-emitting layer away from the substrate; wherein the second conductive layer located in the light-emitting area of ​​the substrate is used as the second electrode layer, and the second conductive layer located in the signal transmission area is used as the second electrode signal transmission layer; the second electrode signal transmission layer is arranged on the same layer as the second electrode layer;

[0037] Alternatively, a light-emitting device layer is formed in the light-emitting area, and a first electrode signal transmission layer, an insulating layer, and a second electrode signal transmission layer are sequentially formed in the signal transmission area, including:

[0038] A first conductive layer is formed in the light-emitting area and the signal transmission area of ​​the substrate; wherein the first conductive layer located in the light-emitting area of ​​the substrate is used as the first electrode layer, and the first conductive layer located in the signal transmission area is used as the first electrode signal transmission layer; the first electrode signal transmission layer is arranged in the same layer as the first electrode layer;

[0039] forming an insulating layer on a side of the first electrode signal transmission layer away from the substrate, and forming a second electrode signal transmission layer on a side of the insulating layer away from the substrate;

[0040] forming a light-emitting layer on a side of the first electrode layer away from the substrate;

[0041] A second electrode layer is formed on a side of the light-emitting layer away from the substrate and in a region adjacent to the second electrode layer in a surface of the second electrode signal transmission layer away from the substrate; wherein the second electrode layer formed in a region adjacent to the second electrode layer in a surface of the second electrode signal transmission layer away from the substrate is used as a overlapping portion where the second electrode layer contacts the second electrode signal transmission layer.

[0042] Optionally, the method for preparing the light-emitting device further includes:

[0043] Patterning the second electrode signal transmission layer to form a plurality of first electrode leads;

[0044] Patterning the second electrode signal transmission layer to form a plurality of second electrode leads;

[0045] The step of patterning the second electrode signal transmission layer to form a plurality of second electrode leads comprises:

[0046] Patterning the surface of the insulating layer away from the substrate to form a plurality of grooves arranged at intervals;

[0047] Based on the patterned surface of the insulating layer, the second electrode signal transmission layer is patterned to form a plurality of second electrode leads; wherein the depth of the groove is greater than the thickness of the second electrode signal transmission layer, and the second electrode lead is located between two adjacent grooves.

[0048] The embodiment of the present invention provides a light-emitting device and a preparation method thereof, wherein the light-emitting device comprises: a substrate, comprising a light-emitting area and a non-light-emitting area located at least on one side of the light-emitting area; wherein the non-light-emitting area comprises a signal transmission area; a light-emitting device layer, located in the light-emitting area of ​​the substrate; a first electrode signal transmission layer and a second electrode signal transmission layer, located in the signal transmission area of ​​the substrate; an insulating layer, located between the first electrode signal transmission layer and the second electrode signal transmission layer, for isolating the first electrode signal transmission layer and the second electrode signal transmission layer; wherein the first electrode signal transmission layer, the insulating layer and the second electrode signal transmission layer are sequentially arranged in a direction away from the substrate; the first electrode signal transmission layer and the second electrode signal transmission layer are used to transmit electrical signals to different electrode layers in the light-emitting device layer, respectively. The technical solution provided by the embodiment of the present invention can increase the area of ​​the first electrode signal transmission layer and the second transmission layer by vertically placing the first electrode signal transmission layer and the second electrode signal transmission layer used to transmit electrical signals to different electrode layers in the light-emitting device layer, instead of the horizontal side-by-side arrangement in the related art, thereby increasing the overlap area between the electrode layer and the electrode transmission layer in the light-emitting device layer, improving the problem of high local current, and improving the life and reliability of the light-emitting device.

[0049] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0051] Figure 1 is a cross-sectional structural diagram of a light emitting device provided by an embodiment of the present invention;

[0052] Figure 2 is a cross-sectional structural diagram of another light emitting device provided by an embodiment of the present invention;

[0053] Figure 3 is a top view of a light emitting device provided by an embodiment of the present invention;

[0054] Figure 4 is a top view of another light emitting device provided by an embodiment of the present invention;

[0055] Figure 5 is a top view of another light emitting device provided by an embodiment of the present invention;

[0056] Figure 6 is a top view of another light emitting device provided by an embodiment of the present invention;

[0057] Figure 7 is a top view of another light emitting device provided by an embodiment of the present invention;

[0058] Figure 8 is a cross-sectional structural diagram of an insulating layer in a light-emitting device provided by an embodiment of the present invention;

[0059] Fig. 9 is a cross-sectional structural diagram of an insulating layer in another light-emitting device provided by an embodiment of the present invention;

[0060] Fig.10 is a flow chart of a method for preparing a light-emitting device provided by an embodiment of the present invention;

[0061] Fig.11 is a cross-sectional view corresponding to step S210 in a method for preparing a light-emitting device provided in an embodiment of the present invention;

[0062] Fig.12 is a cross-sectional view corresponding to step S211 in a method for preparing a light-emitting device provided in an embodiment of the present invention;

[0063] Fig.13 is a cross-sectional view corresponding to step S213 in a method for preparing a light-emitting device provided in an embodiment of the present invention;

[0064] Fig.14 is a cross-sectional view corresponding to step S221 in a method for preparing a light-emitting device provided in an embodiment of the present invention;

[0065] Fig.15 It is a cross-sectional view corresponding to step S222 in a method for preparing a light-emitting device provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0066] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0067] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0068] An embodiment of the present invention provides a light emitting device, Figure 1 is a cross-sectional structural diagram of a light emitting device provided by an embodiment of the present invention, with reference to Figure 1 , the light emitting device comprises:

[0069] The substrate 10 includes a light-emitting area Q1 and a non-light-emitting area Q2 located at at least one side of the light-emitting area Q1; wherein the non-light-emitting area Q2 includes a signal transmission area;

[0070] The light emitting device layer 20 is located in the light emitting area Q1 of the substrate 10;

[0071] The first electrode signal transmission layer 30 and the second electrode signal transmission layer 50 are located in the signal transmission area of ​​the substrate 10;

[0072] An insulating layer 40 is located between the first electrode signal transmission layer 30 and the second electrode signal transmission layer 50 and is used to isolate the first electrode signal transmission layer 30 and the second electrode signal transmission layer 50;

[0073] Among them, the first electrode signal transmission layer 30, the insulating layer 40 and the second electrode signal transmission layer 50 are arranged in sequence along the direction away from the substrate 10; the first electrode signal transmission layer 30 and the second electrode signal transmission layer 50 are used to transmit electrical signals to different electrode layers in the light-emitting device layer 20 respectively.

[0074] Specifically, the substrate 10 may be a flexible substrate, and the material of the flexible substrate is an organic polymer such as PET, PEN, PI, or ultra-thin glass. The substrate may also be a rigid substrate, such as a glass substrate 10. The substrate 10 may be transparent, translucent, or opaque. The substrate 10 includes a light-emitting area Q1 and a non-light-emitting area Q2, and a light-emitting device layer 20 is provided in the light-emitting area Q1 of the substrate 10. The non-light-emitting area Q2 has a signal transmission area, and the signal transmission area includes a first electrode signal transmission layer 30, an insulating layer 40, and a second electrode signal transmission layer 50, which are sequentially arranged in a direction away from the substrate 10. The first electrode signal transmission layer 30 and the second electrode signal transmission layer 50 are used to transmit electrical signals to different electrode layers in the light-emitting device layer 20, respectively.

[0075] The light-emitting device layer 20 includes: a first electrode layer 21, located on one side of the substrate 10; a light-emitting layer 22, located on the side of the first electrode layer 21 away from the substrate 10; and a second electrode layer 23, located on the side of the light-emitting layer 22 away from the substrate 10. The first electrode signal transmission layer 30 is electrically connected to the first electrode layer 21, and the first electrode signal transmission layer 30 is used to transmit electrical signals to the first electrode layer 21; the second electrode signal transmission layer 50 is electrically connected to the second electrode layer 23, and the second electrode signal transmission layer 50 is used to transmit electrical signals to the second electrode layer 23. The first electrode signal transmission layer 30 and the second electrode signal transmission layer 50 can be a whole layer of film structure, in which case the first electrode signal transmission layer 30 and the second electrode signal transmission layer 50 can be understood as electrode leads with a larger width. The first electrode signal transmission layer 30 and the second electrode signal transmission layer 50 can also be patterned to include a plurality of electrode leads with a smaller width.

[0076] One end of the electrode lead is connected to the electrode layer in the light-emitting device, and the other end is connected to the flexible circuit board bound to the substrate 10, and the flexible circuit board can receive the voltage signal provided by the external power supply, so as to realize the electrical connection between the light-emitting device layer 20 and the external power supply. That is, the electrode lead can transmit the light-emitting driving signal input by the flexible circuit board to the light-emitting structure, so that the light-emitting device can be lit up to emit light for illumination or display.

[0077] The light-emitting device provided in the embodiment of the present invention increases the area of ​​the first electrode signal transmission layer 30 and the area of ​​the second electrode signal transmission layer 50 by vertically placing the first electrode signal transmission layer 30 and the second electrode signal transmission layer 50 for transmitting electrical signals to different electrode layers in the light-emitting device layer 20 instead of horizontally arranging them side by side in the related art, thereby increasing the overlapping area between the electrode layer and the electrode transmission layer in the light-emitting device layer 20, improving the problem of high local current, and improving the life and reliability of the light-emitting device.

[0078] Based on the above embodiments, optionally, the first electrode layer 21 includes a plurality of first electrodes, each of which is electrically connected to a first electrode lead. The light-emitting layer 22 is located on a side of the first electrode layer 21 away from the substrate 10; the second electrode layer 23 is located on a side of the light-emitting layer 22 away from the substrate 10. Each first electrode and the light-emitting layer 22 and the second electrode layer 23 above each first electrode constitute a light-emitting device. The light-emitting device layer 20 includes a plurality of light-emitting devices.

[0079] The first electrode layer 21 (as the anode of the light-emitting device) can be formed as a transparent electrode or a reflective electrode according to its purpose. In an embodiment of the present invention, the first electrode layer 21 is formed as a transparent electrode, and the first electrode layer 21 may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or indium oxide (In2O3), etc. The light-emitting layer 22 can be formed of a low molecular weight organic material or a high molecular weight organic material. The second electrode layer 23 (as the cathode of the light-emitting device) is located on the light-emitting layer 22. The second electrode layer 23 can be formed as a transparent electrode or a reflective electrode according to its purpose. In an embodiment of the present invention, the second electrode layer 23 is a reflective electrode layer, and the second electrode layer 23 can be formed of Ag, magnesium (Mg), Al, Pt, Pd, Au, Ni, Nd, iridium (Ir), Cr or a mixture thereof.

[0080] Based on the above embodiments, Figure 1 In one embodiment of the present invention, the light emitting device further comprises:

[0081] The first conductive layer 01 is located in the light emitting area Q1 and the signal transmission area of ​​the substrate 10; wherein the first conductive layer 01 located in the light emitting area Q1 of the substrate 10 is used as the first electrode layer 21, and the first conductive layer 01 located in the signal transmission area is used as the first electrode signal transmission layer 30;

[0082] The second electrode layer 23 includes an overlapping portion 231 in contact with the second electrode signal transmission layer 50 . The overlapping portion 231 is located in a region adjacent to the second electrode layer 23 on a surface of the second electrode signal transmission layer 50 away from the substrate 10 .

[0083] Specifically, the material of the first electrode signal transmission layer 30 is the same as that of the first electrode layer 21, and the first electrode signal transmission layer 30 and the first electrode layer 21 are arranged in the same layer, so that the first electrode signal transmission layer 30 and the first electrode layer 21 can be prepared and formed at the same time, simplifying the preparation process of the light-emitting device. The second electrode layer 23 and the second electrode signal transmission layer 50 are formed in different process steps, so that the second electrode layer 23 and the second electrode signal transmission layer 50 can use the same conductive material or different conductive materials. The second electrode layer 23 includes an overlapping portion 231 that contacts the second electrode signal transmission layer 50, and the overlapping portion 231 is located in the surface of the second electrode signal transmission layer 50 on the side away from the substrate 10, and is adjacent to and overlaps the second electrode layer 23.

[0084] In the process of preparing the light-emitting device, a light-emitting device layer 20 is formed in the light-emitting area Q1, and a first electrode signal transmission layer 30, an insulating layer 40 and a second electrode signal transmission layer 50 are sequentially formed in the signal transmission area, including: forming a first conductive layer 01 in the light-emitting area Q1 and the signal transmission area of ​​the substrate 10; wherein the first conductive layer 01 located in the light-emitting area Q1 of the substrate 10 is used as the first electrode layer 21, and the first conductive layer 01 located in the signal transmission area is used as the first electrode signal transmission layer 30; forming an insulating layer 40 on a side of the first electrode signal transmission layer 30 away from the substrate 10, and forming a second electrode signal transmission layer 50 on a side of the insulating layer 40 away from the substrate 10; forming a light-emitting layer 22 on a side of the first electrode layer 21 away from the substrate 10; forming a second electrode layer 23 on a side of the light-emitting layer 22 away from the substrate 10 and in an area of ​​the second electrode signal transmission layer overlapping with the second electrode layer 23.

[0085] Based on the above embodiments, Figure 2 is a cross-sectional structural diagram of another light emitting device provided by an embodiment of the present invention, referring to Figure 2 In another embodiment of the present invention, the light emitting device further comprises:

[0086] The first conductive layer 01 is located in the light emitting area Q1 and the signal transmission area of ​​the substrate 10; wherein the first conductive layer 01 located in the light emitting area Q1 of the substrate 10 is used as the first electrode layer 21, and the first conductive layer 01 located in the signal transmission area is used as the first electrode signal transmission layer 30;

[0087] The second conductive layer 02 is located in the light-emitting area Q1 and the signal transmission area of ​​the substrate 10, and is located on the side of the light-emitting layer 22 away from the substrate 10; wherein, the second conductive layer 02 located in the light-emitting area Q1 of the substrate 10 is used as the second electrode layer 23, and the second conductive layer 02 located in the signal transmission area is used as the second electrode signal transmission layer 50; the second electrode signal transmission layer 50 is arranged on the same layer as the second electrode layer 23.

[0088] Specifically, the first electrode signal transmission layer 30 is provided in the same layer as the first electrode layer 21 and is made of the same material, so that the first electrode signal transmission layer 30 and the first electrode layer 21 can be prepared and formed at the same time, simplifying the preparation process of the light-emitting device. The second electrode signal transmission layer 50 is provided in the same layer as the second electrode layer 23 and is made of the same material, so that the second electrode signal transmission layer 50 and the second electrode layer 23 can be prepared and formed at the same time, which can further simplify the preparation process of the light-emitting device.

[0089] In which, during the preparation of the light-emitting device, a light-emitting device layer 20 is formed in the light-emitting area Q1, and a first electrode signal transmission layer 30, an insulating layer 40 and a second electrode signal transmission layer 50 are sequentially formed in the signal transmission area, which can specifically include: forming a first conductive layer 01 in the light-emitting area Q1 and the signal transmission area of ​​the substrate 10, wherein the first conductive layer 01 located in the light-emitting area Q1 of the substrate 10 is used as the first electrode layer 21, and the first conductive layer 01 located in the signal transmission area is used as the first electrode signal transmission layer 30; based on the shielding of the light-emitting area Q1 by the mask layer, an insulating layer 40 is formed on the side of the first electrode signal transmission layer 30 away from the substrate 10; based on the shielding of the non-light-emitting area Q2 by another mask layer, a light-emitting layer 22 is formed on the side of the first conductive layer 01 away from the substrate 10; and a second conductive layer 02 is formed on the side of the insulating layer 40 and the light-emitting layer 22 away from the substrate 10, the second conductive layer 02 located in the light-emitting area Q1 of the substrate 10 is used as the second electrode layer 23, and the second conductive layer 02 located in the signal transmission area is used as the second electrode signal transmission layer 50.

[0090] On the basis of the above embodiments, optionally, when the materials of the first electrode layer 21 and the first electrode signal transmission layer 30 include conductive materials such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or indium oxide (In2O3), in order to reduce the loss of electrical signals by the first electrode signal transmission layer 30, an auxiliary electrode lead formed of a material with better conductivity may be provided on the side of the first electrode signal transmission layer 30 close to the substrate 10 or on the side away from the substrate 10.

[0091] Based on the above embodiments, Figure 3 is a top view of a light emitting device provided by an embodiment of the present invention, Figure 4 is a top view of another light emitting device provided by an embodiment of the present invention, referring to Figure 3 and Figure 4 Optionally, the first electrode signal transmission layer 30 includes a plurality of first electrode leads 31 , and each first electrode lead 31 is electrically connected to the first electrode layer 21 in the light emitting device layer 20 . Figure 3 and Figure 4 The difference is whether the insulating layer 40 is patterned, wherein Figure 3 The insulating layer 40 in the structure shown is patterned in stripes. Figure 4 The insulating layer 40 in the illustrated structure is not patterned.

[0092] Figure 5 is a top view of another light emitting device provided by an embodiment of the present invention, Figure 6 is a top view of another light emitting device provided by an embodiment of the present invention, referring to Figure 5 and Figure 6 The second electrode signal transmission layer 50 includes a plurality of second electrode leads 51 , and each second electrode lead 51 is electrically connected to the second electrode layer 23 in the light emitting device layer 20 .

[0093] Specifically, the first electrode signal transmission layer 30 can be patterned to include a plurality of first electrode leads 31, the first electrode layer 21 in the light-emitting device layer 20 can be electrically connected to the plurality of first electrode leads 31, and different first electrode leads 31 are electrically connected to different regions of the first electrode layer 21, thereby reducing the voltage difference at different positions of the first electrode layer 21 and improving the voltage uniformity of the first electrode layer 21. The second electrode signal transmission layer 50 can be patterned to include a plurality of second electrode leads 51, the second electrode layer 23 in the light-emitting device layer 20 can be electrically connected to the plurality of second electrode leads 51, and different second electrode leads 51 are electrically connected to different regions of the second electrode layer 23, thereby reducing the voltage difference at different positions of the second electrode layer 23 and improving the voltage uniformity of the second electrode layer 23. Among them, the insulating layer 40 can be a strip structure with the same pattern as the second electrode lead 51, or can be a whole film layer with the same pattern as the second electrode signal transmission layer 50.

[0094] Based on the above embodiments, Figure 7 is a top view of another light emitting device provided by an embodiment of the present invention, referring to Figure 7 Optionally, the light-emitting region Q1 includes a plurality of light-emitting sub-regions Q11; the first electrode signal transmission layer 30 includes a plurality of first electrode leads 31, and the light-emitting device layer 20 in each light-emitting sub-region Q11 is electrically connected to at least one first electrode lead 31;

[0095] The second electrode signal transmission layer 50 includes a plurality of second electrode leads 51. The light-emitting device layer 20 in each light-emitting sub-region Q11 is electrically connected to at least one second electrode lead 51 (refer to Figure 7 ), or, the light emitting device layers 20 in a plurality of light emitting sub-regions Q11 share the second electrode transport layer 50 .

[0096] Specifically, the light-emitting region Q1 includes a plurality of light-emitting sub-regions Q11, and each light-emitting sub-region Q11 includes a light-emitting device layer 20. The first electrode layers 21 in the light-emitting device layers 20 of different light-emitting sub-regions Q11 are arranged at intervals, and the first electrode layer 21 in the light-emitting device layer 20 in each light-emitting sub-region Q11 is electrically connected to at least one first electrode lead 31. The second electrode layer 23 in the light-emitting device layer 20 of different light-emitting sub-regions Q11 can be a common cathode formed by a whole layer of conductive film layer, or the second electrode layer 23 in the light-emitting device layer 20 of different light-emitting sub-regions Q11 can be arranged at intervals.

[0097] In the case where the second electrode layer 23 in the light-emitting device layer 20 of different light-emitting sub-regions Q11 is a common cathode formed by a whole layer of conductive film layer, the second electrode signal transmission layer 50 may not be patterned, and the common cathode is electrically connected to the second electrode signal transmission layer 50, so that the light-emitting device layers 20 in multiple light-emitting sub-regions Q11 share the second electrode signal transmission layer 50; the second electrode signal transmission layer 50 may also be patterned to form multiple second electrode leads 51, and the common cathode is electrically connected to the multiple second electrode leads 51.

[0098] When the second electrode layers 23 in the light-emitting device layers 20 of different light-emitting sub-regions Q11 are arranged at intervals, the second electrode signal transmission layer 50 may not be patterned, and the second electrode layers 23 of the light-emitting device layers 20 in different light-emitting sub-regions Q11 may all be electrically connected to the second electrode signal transmission layer 50, so that the light-emitting device layers 20 in multiple light-emitting sub-regions Q11 share the second electrode signal transmission layer 50; the second electrode signal transmission layer 50 may also be patterned to form multiple second electrode leads 51, and the second electrode layer 23 in the light-emitting device layer 20 of each light-emitting sub-region Q11 is electrically connected to at least one second electrode lead 51.

[0099] For further reference, Figure 7 In the case where the light-emitting region Q1 includes a plurality of light-emitting sub-regions Q11, and each light-emitting sub-region Q11 has an independent second electrode layer 23 and a first electrode layer 21, the first electrode layer 21 in each light-emitting sub-region Q11 is electrically connected to at least one first electrode lead 31, and the second electrode layer 23 in each light-emitting sub-region Q11 is electrically connected to at least one second electrode lead 51, and current can be selectively provided to the first electrode layer 21 and the second electrode layer 23. In addition, compared with the common cathode of the prior art, the second electrode layer 23 is patterned so that each light-emitting sub-region Q11 has an independent second electrode layer 23, and the second electrode layer 23 in each light-emitting sub-region Q11 is electrically connected to at least one second electrode lead 51, which can further reduce the voltage drop at different positions on the second electrode layer 23.

[0100] For further reference, Figure 7, when the light-emitting device layer 20 in each light-emitting sub-region Q11 is electrically connected to at least one first electrode lead 31, and the light-emitting device layer 20 in each light-emitting sub-region Q11 is electrically connected to at least one second electrode lead 51, at least a part of the light-emitting device layers 20 in the light-emitting sub-regions Q11 can be connected to the first electrode lead 31 and the second electrode lead 51 through the electrode connecting line 70; in two light-emitting sub-regions Q11 with different distances to the signal transmission region, the width of the electrode connecting line 70 connected to the light-emitting sub-region Q11 that is closer to the signal transmission region is smaller than the width of the electrode connecting line 70 connected to the light-emitting sub-region Q11 that is farther away from the signal transmission region.

[0101] It can be understood that after the light-emitting area Q1 is patterned, there are light-emitting sub-areas Q11 that are closer to the signal transmission area in the non-light-emitting area Q2, and there are light-emitting sub-areas Q11 that are farther from the signal transmission area in the non-light-emitting area Q2. Among them, the electrode layer in the light-emitting sub-area Q11 that is closer to the signal transmission area can directly contact the electrode lead (for example, the light-emitting sub-area Q11 that is closest to the signal transmission area can directly contact the electrode lead when it is adjacent to the signal transmission area), thereby achieving electrical connection, and can also achieve electrical connection through the electrode connection line 70. The electrode layer in the light-emitting sub-area Q11 that is farther away from the signal transmission area needs to be electrically connected to the electrode lead in the signal transmission area through the electrode connection line 70. Therefore, there is a problem that the length of the electrode connection line 70 connected to the light-emitting sub-region Q11 with a closer distance to the signal transmission region is smaller than the electrode connection line 70 connected to the light-emitting sub-region Q11 with a farther distance to the signal transmission region, resulting in different resistances of the electrode connection lines. In the embodiment of the present invention, by setting the width of the electrode connection line 70 connected to the light-emitting sub-region Q11 with a closer distance to the signal transmission region to be smaller than the width of the electrode connection line 70 connected to the light-emitting sub-region Q11 with a farther distance to the signal transmission region, the resistances of the electrode connection lines 70 electrically connected to the two light-emitting sub-regions Q11 with different distances to the signal transmission region can be the same, thereby reducing the voltage drop difference on the electrode leads of different lengths. The electrode connection line 70 includes a first electrode connection line and a second electrode connection line, the first electrode connection line is used to connect the first electrode lead 31 and the first electrode layer 21, and the second electrode connection line is used to connect the second electrode lead 51 and the second electrode layer 23.

[0102] Based on the above embodiments, Figure 8 is a cross-sectional structural diagram of an insulating layer in a light-emitting device provided by an embodiment of the present invention, Fig. 9 is a cross-sectional structural diagram of an insulating layer in another light-emitting device provided by an embodiment of the present invention, with reference to Figure 8 and Fig. 9Optionally, the surface of the insulating layer 40 away from the substrate 10 includes a plurality of spaced grooves 41 , and the depth of the grooves 41 is greater than the thickness of the second electrode signal transmission layer 50 ; the second electrode lead 51 is located between two adjacent grooves 41 , or the second electrode lead 51 is located in the groove 41 .

[0103] Specifically, the surface of the insulating layer 40 away from the substrate 10 is patterned to form a plurality of grooves 41 arranged at intervals. After the material of the second electrode signal transmission layer 50 is deposited on the surface of the patterned insulating layer 40, the second electrode signal transmission layer 50 can be directly patterned through the surface of the insulating layer 40 to form a plurality of second electrode leads 51. The depth of the grooves 41 is set to be greater than the thickness of the second electrode signal transmission layer 50, so that the material located in the grooves 41 is broken from the material located on the surface of the insulating layer 40, thereby forming the second electrode leads 51 between two adjacent grooves 41 (i.e., the surface of the insulating layer 40 away from the substrate 10), or forming the second electrode leads 51 in the grooves, which simplifies the process of patterning the second electrode signal transmission layer 50.

[0104] The groove 41 may be located in the region between two adjacent first electrode leads 31, or may be located on the side of the first electrode lead 31 away from the substrate 10. Preferably, the groove 41 may be located in the region between two adjacent first electrode leads 31, and the groove 41 may be directly formed by utilizing the gap between the two adjacent first electrode leads 31, without using an etching process to form the groove 41 on the surface of the insulating layer away from the substrate.

[0105] Based on the above embodiments, optionally, refer to Figure 1 and Figure 2 The light-emitting device further includes a cover plate 60 , which is located on a side of the light-emitting device layer 20 away from the substrate 10 , and is used to encapsulate and protect the light-emitting device layer 20 .

[0106] An embodiment of the present invention further provides a method for preparing a light-emitting device, which is used to prepare the light-emitting device described in any embodiment of the present invention. Fig.10 is a flow chart of a method for preparing a light emitting device provided by an embodiment of the present invention, with reference to Fig.10 , the preparation method of the light emitting device comprises:

[0107] S10, providing a substrate; the substrate comprises a light-emitting area and a non-light-emitting area located at least on one side of the light-emitting area; wherein the non-light-emitting area comprises a signal transmission area.

[0108] S20. Form a light-emitting device layer in the light-emitting area, and sequentially form a first electrode signal transmission layer, an insulating layer, and a second electrode signal transmission layer in the signal transmission area; wherein the first electrode signal transmission layer and the second electrode signal transmission layer are respectively used to transmit electrical signals to different electrode layers in the light-emitting device layer, and the insulating layer is used to isolate the first electrode signal transmission layer from the second electrode signal transmission layer.

[0109] The light-emitting device provided in the embodiment of the present invention increases the area of ​​the first electrode signal transmission layer 30 and the area of ​​the second electrode signal transmission layer 50 by vertically placing the first electrode signal transmission layer 30 and the second electrode signal transmission layer 50 for transmitting electrical signals to different electrode layers in the light-emitting device layer 20 instead of horizontally arranging them side by side in the related art, thereby increasing the overlapping area between the electrode layer and the electrode transmission layer in the light-emitting device layer 20, improving the problem of high local current, and improving the life and reliability of the light-emitting device.

[0110] Optionally, the light emitting device layer 20 includes: a first electrode layer 21, located on one side of the substrate 10; a light emitting layer 22, located on a side of the first electrode layer 21 away from the substrate 10; a second electrode layer 23, located on a side of the light emitting layer 22 away from the substrate 10;

[0111] In one embodiment of the present invention, step S20 forms a light-emitting device layer in the light-emitting area, and sequentially forms a first electrode signal transmission layer, an insulating layer, and a second electrode signal transmission layer in the signal transmission area, including:

[0112] S210, forming a first conductive layer 01 in the light-emitting area Q1 and the signal transmission area of ​​the substrate 10; wherein the first conductive layer 01 located in the light-emitting area Q1 of the substrate 10 is used as the first electrode layer 21, and the first conductive layer 01 located in the signal transmission area is used as the first electrode signal transmission layer 30; the first electrode signal transmission layer 30 is arranged in the same layer as the first electrode layer 21. (Refer to Fig.11 )

[0113] S211, forming an insulating layer 40 on a side of the first electrode signal transmission layer 30 away from the substrate 10, and forming a second electrode signal transmission layer 50 on a side of the insulating layer 40 away from the substrate 10. (Refer to Fig.12 )

[0114] S212 , forming a light-emitting layer 22 on a side of the first electrode layer 21 away from the substrate 10 .

[0115] S213, forming a second electrode layer 23 on the side of the light emitting layer 22 away from the substrate 10 and in the area adjacent to and overlapping the second electrode layer 23 on the surface of the second electrode signal transmission layer 50 away from the substrate 10; wherein the second electrode layer 23 formed in the area adjacent to the second electrode layer 23 on the surface of the second electrode signal transmission layer 50 away from the substrate 10 is used as the overlapping portion where the second electrode layer 23 contacts the second electrode signal transmission layer 50. (Refer to Fig.13 )

[0116] In another embodiment of the present invention, step S20 forms a light-emitting device layer in the light-emitting area, and sequentially forms a first electrode signal transmission layer, an insulating layer, and a second electrode signal transmission layer in the signal transmission area, including:

[0117] S220, forming a first conductive layer 01 in the light-emitting area Q1 and the signal transmission area of ​​the substrate 10; wherein the first conductive layer 01 in the light-emitting area Q1 of the substrate 10 is used as the first electrode layer 21, and the first conductive layer 01 in the signal transmission area is used as the first electrode signal transmission layer 30; the first electrode signal transmission layer 30 is arranged in the same layer as the first electrode layer 21. (Refer to Fig.11 )

[0118] S221, forming an insulating layer 40 on the side of the first electrode signal transmission layer 30 away from the substrate 10, and forming a light-emitting layer 22 on the side of the first conductive layer 01 away from the substrate 10. (Refer to Fig.14 )

[0119] S222, forming a second conductive layer 02 on the side of the insulating layer 40 and the light-emitting layer 22 away from the substrate 10; wherein the second conductive layer 02 located in the light-emitting area Q1 of the substrate 10 is used as the second electrode layer 23, and the second conductive layer 02 located in the signal transmission area is used as the second electrode signal transmission layer 50; the second electrode signal transmission layer 50 is arranged on the same layer as the second electrode layer 23. (Refer to Fig.15 )

[0120] On the basis of the above embodiments, optionally, while or after forming the first electrode signal transmission layer 30 , the method further includes: patterning the first electrode signal transmission layer 30 to form a plurality of first electrode leads 31 .

[0121] While or after forming the second electrode signal transmission layer 50 , the method further includes: patterning the second electrode signal transmission layer 50 to form a plurality of second electrode leads 51 .

[0122] When forming the first electrode signal transmission layer 30, the first electrode signal transmission layer 30 may be patterned based on a mask including a first electrode lead pattern to form a plurality of first electrode leads 31. Alternatively, after forming the first electrode signal transmission layer 30, the first electrode signal transmission layer 30 may be patterned using an etching process to form a plurality of first electrode leads 31. The patterning method of the second electrode signal transmission layer 50 may refer to the first electrode signal transmission layer 30, and will not be described in detail here.

[0123] Optionally, the step of patterning the second electrode signal transmission layer 50 to form a plurality of second electrode leads 51 may further include:

[0124] The surface of the insulating layer 40 away from the substrate 10 is patterned to form a plurality of grooves 41 arranged at intervals;

[0125] Based on the patterned surface of the insulating layer 40 , the second electrode signal transmission layer 50 is patterned to form a plurality of second electrode leads 51 ; wherein the depth of the groove 41 is greater than the thickness of the second electrode signal transmission layer 50 , and the second electrode lead 51 is located between two adjacent grooves 41 , or in the groove 41 .

[0126] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A light emitting device, characterized in that: include: A substrate, comprising a light-emitting area and a non-light-emitting area located at least on one side of the light-emitting area; wherein the non-light-emitting area comprises a signal transmission area; A light-emitting device layer, located in the light-emitting area of ​​the substrate; A first electrode signal transmission layer and a second electrode signal transmission layer are located in a signal transmission area of ​​the substrate; an insulating layer, located between the first electrode signal transmission layer and the second electrode signal transmission layer, and used to isolate the first electrode signal transmission layer from the second electrode signal transmission layer; Among them, along the direction away from the substrate, the first electrode signal transmission layer, the insulating layer and the second electrode signal transmission layer are arranged in sequence; the first electrode signal transmission layer and the second electrode signal transmission layer are used to transmit electrical signals to different electrode layers in the light-emitting device layer respectively.

2. The light emitting device according to claim 1, characterized in that: The light emitting device layer comprises: A first electrode layer, located on one side of the substrate; a light-emitting layer, located on a side of the first electrode layer away from the substrate; A second electrode layer is located on a side of the light-emitting layer away from the substrate; Among them, the first electrode signal transmission layer is electrically connected to the first electrode layer, and the first electrode signal transmission layer is used to transmit electrical signals to the first electrode layer; the second electrode signal transmission layer is electrically connected to the second electrode layer, and the second electrode signal transmission layer is used to transmit electrical signals to the second electrode layer.

3. The light emitting device according to claim 2, characterized in that: The light emitting device further comprises: A first conductive layer is located in the light-emitting area and the signal transmission area of ​​the substrate; wherein the first conductive layer located in the light-emitting area of ​​the substrate is used as the first electrode layer, and the first conductive layer located in the signal transmission area is used as the first electrode signal transmission layer; the first electrode signal transmission layer and the first electrode layer are arranged in the same layer; The second conductive layer is located in the light emitting area and the signal transmission area of ​​the substrate, and is located on the side of the first conductive layer away from the substrate; wherein the second conductive layer located in the light emitting area of ​​the substrate is used as the second electrode layer, and the second conductive layer located in the signal transmission area is used as the second electrode signal transmission layer; the second electrode signal transmission layer is arranged on the same layer as the second electrode layer.

4. The light emitting device according to claim 2, characterized in that: The second electrode layer includes an overlapping portion contacting the second electrode signal transmission layer, and the overlapping portion is located in a region adjacent to and overlapping the second electrode layer on a surface of the second electrode signal transmission layer away from the substrate.

5. The light emitting device according to claim 2, characterized in that: The first electrode signal transmission layer includes a plurality of first electrode leads, each of which is electrically connected to the first electrode layer in the light emitting device layer; And / or, the second electrode signal transmission layer includes a plurality of second electrode leads, each of which is electrically connected to the second electrode layer in the light emitting device layer.

6. The light emitting device according to claim 2, characterized in that: The light-emitting region includes a plurality of light-emitting sub-regions; The first electrode signal transmission layer includes a plurality of first electrode leads, and the light-emitting device layer in each light-emitting sub-region is electrically connected to at least one first electrode lead; The light-emitting device layers in the plurality of light-emitting sub-regions share the second electrode signal transmission layer, or the second electrode signal transmission layer includes a plurality of second electrode leads, and the light-emitting device layer in each light-emitting sub-region is electrically connected to at least one second electrode lead; In which, when the light-emitting device layer in each light-emitting sub-region is electrically connected to at least one first electrode lead and the light-emitting device layer in each light-emitting sub-region is electrically connected to at least one second electrode lead, the light-emitting device layers in at least a part of the light-emitting sub-regions are connected to the first electrode lead and the second electrode lead through electrode connecting lines; in two light-emitting sub-regions with different distances to the signal transmission region, the width of the electrode connecting line connected to the light-emitting sub-region that is closer to the signal transmission region is smaller than the width of the electrode connecting line connected to the light-emitting sub-region that is farther away from the signal transmission region.

7. The light emitting device according to claim 5 or 6, characterized in that: The surface of the insulating layer away from the substrate comprises a plurality of grooves arranged at intervals, and the depth of the grooves is greater than the thickness of the second electrode signal transmission layer; The second electrode lead is located between two adjacent grooves, or the second electrode lead is located in the groove.

8. A method for preparing a light-emitting device, characterized in that: Used to prepare the light-emitting device according to any one of claims 1 to 7, comprising: Providing a substrate; the substrate comprising a light-emitting area and a non-light-emitting area located at least on one side of the light-emitting area; wherein the non-light-emitting area comprises a signal transmission area; A light-emitting device layer is formed in the light-emitting area, and a first electrode signal transmission layer, an insulating layer, and a second electrode signal transmission layer are sequentially formed in the signal transmission area; wherein the first electrode signal transmission layer and the second electrode signal transmission layer are respectively used to transmit electrical signals to different electrode layers in the light-emitting device layer, and the insulating layer is used to isolate the first electrode signal transmission layer from the second electrode signal transmission layer.

9. The method for preparing a light emitting device according to claim 8, characterized in that: The light emitting device layer comprises: a first electrode layer, located on one side of the substrate; a light emitting layer, located on a side of the first electrode layer away from the substrate; and a second electrode layer, located on a side of the light emitting layer away from the substrate. A light emitting device layer is formed in the light emitting area, and a first electrode signal transmission layer, an insulating layer, and a second electrode signal transmission layer are sequentially formed in the signal transmission area, including: A first conductive layer is formed in the light-emitting area and the signal transmission area of ​​the substrate; wherein the first conductive layer located in the light-emitting area of ​​the substrate is used as the first electrode layer, and the first conductive layer located in the signal transmission area is used as the first electrode signal transmission layer; the first electrode signal transmission layer is arranged in the same layer as the first electrode layer; forming an insulating layer on a side of the first electrode signal transmission layer away from the substrate; forming a light-emitting layer on a side of the first conductive layer away from the substrate; A second conductive layer is formed on a side of the insulating layer and the light-emitting layer away from the substrate; wherein the second conductive layer located in the light-emitting area of ​​the substrate is used as the second electrode layer, and the second conductive layer located in the signal transmission area is used as the second electrode signal transmission layer; the second electrode signal transmission layer is arranged on the same layer as the second electrode layer; Alternatively, a light-emitting device layer is formed in the light-emitting area, and a first electrode signal transmission layer, an insulating layer, and a second electrode signal transmission layer are sequentially formed in the signal transmission area, including: A first conductive layer is formed in the light-emitting area and the signal transmission area of ​​the substrate; wherein the first conductive layer located in the light-emitting area of ​​the substrate is used as the first electrode layer, and the first conductive layer located in the signal transmission area is used as the first electrode signal transmission layer; the first electrode signal transmission layer is arranged in the same layer as the first electrode layer; forming an insulating layer on a side of the first electrode signal transmission layer away from the substrate, and forming a second electrode signal transmission layer on a side of the insulating layer away from the substrate; forming a light-emitting layer on a side of the first electrode layer away from the substrate; A second electrode layer is formed on a side of the light-emitting layer away from the substrate and in a region adjacent to the second electrode layer in a surface of the second electrode signal transmission layer away from the substrate; wherein the second electrode layer formed in a region adjacent to the second electrode layer in a surface of the second electrode signal transmission layer away from the substrate is used as a overlapping portion where the second electrode layer contacts the second electrode signal transmission layer.

10. The method for preparing a light emitting device according to claim 9, characterized in that: Also includes: Patterning the second electrode signal transmission layer to form a plurality of first electrode leads; Patterning the second electrode signal transmission layer to form a plurality of second electrode leads; The step of patterning the second electrode signal transmission layer to form a plurality of second electrode leads comprises: Patterning the surface of the insulating layer away from the substrate to form a plurality of grooves arranged at intervals; Based on the patterned surface of the insulating layer, the second electrode signal transmission layer is patterned to form a plurality of second electrode leads; wherein the depth of the groove is greater than the thickness of the second electrode signal transmission layer, and the second electrode lead is located between two adjacent grooves.

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