Silicon-based OLED display panel and preparation method thereof

Abstract

The present invention discloses a silicon-based OLED display panel and a preparation method thereof, wherein the silicon-based OLED display panel comprises: a silicon-based substrate; a plurality of anodes, arranged on one side of the silicon-based substrate; a spacer is arranged between adjacent anodes; a dielectric structure, arranged on the side of the anode away from the silicon-based substrate; the dielectric structure is arranged in the spacer; the dielectric structure comprises a first dielectric structure and a second dielectric structure; the second dielectric structure is arranged on the side of the first dielectric structure away from the silicon-based substrate; and in a direction parallel to the silicon-based substrate, the width of the second dielectric structure is greater than the width of the first dielectric structure; and the thickness of the first dielectric structure is greater than the thickness of the anode; an organic light-emitting layer, arranged on the side of the dielectric structure away from the silicon-based substrate; the organic light-emitting layer covering the anode is disconnected from the organic light-emitting layer covering the dielectric structure; and a cathode layer, arranged on the side of the organic light-emitting layer away from the silicon-based substrate. The technical solution provided by the present invention is to reduce the problem of optical crosstalk between pixels.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a silicon-based OLED display panel and a preparation method thereof. Background Art

[0002] Silicon-based organic light-emitting diode (OLED) technology is the most popular technical solution for virtual reality (VR) and augmented reality (AR). In addition, silicon-based OLED technology is also widely used in military, medical and other fields, and the technology is experiencing explosive growth. Silicon-based OLED technology has high pixel density and small pixel pitch, which enables small screen sizes to display clear and delicate images.

[0003] In order to achieve isolation between adjacent pixels, current silicon-based OLED devices usually coat a dielectric film after the metal layer is prepared, and then the metal anode of each pixel area is exposed through dry etching. However, this method has the problem of optical crosstalk between the organic light-emitting layers of adjacent pixels. Summary of the invention

[0004] The embodiment of the present invention provides a silicon-based OLED display panel and a method for manufacturing the same, so as to reduce the problem of optical crosstalk between pixels.

[0005] In a first aspect, an embodiment of the present invention provides a silicon-based OLED display panel, comprising: a silicon-based substrate;

[0006] A plurality of anodes are arranged on one side of the silicon-based substrate; a spacer is arranged between adjacent anodes;

[0007] A dielectric structure is arranged on a side of the anode away from the silicon-based substrate; the dielectric structure is arranged in the spacer; the dielectric structure includes a first dielectric structure and a second dielectric structure; the second dielectric structure is arranged on a side of the first dielectric structure away from the silicon-based substrate; and in a direction parallel to the silicon-based substrate, the width of the second dielectric structure is greater than the width of the first dielectric structure; and the thickness of the first dielectric structure is greater than the thickness of the anode;

[0008] An organic light-emitting layer is arranged on a side of the dielectric structure away from the silicon-based substrate; the organic light-emitting layer covering the anode is disconnected from the organic light-emitting layer covering the dielectric structure;

[0009] The cathode layer is arranged on a side of the organic light emitting layer away from the silicon-based substrate.

[0010] In a second aspect, an embodiment of the present invention further provides a method for preparing a silicon-based OLED display panel to form a silicon-based OLED display panel provided by any embodiment of the present invention, comprising:

[0011] Providing a silicon-based substrate;

[0012] forming an anode on the silicon-based substrate;

[0013] Forming a first photoresist layer on a side of the anode away from the silicon-based substrate; etching the first photoresist layer to form a first auxiliary structure corresponding to the anode one by one; the first auxiliary structure covers the corresponding anode;

[0014] A dielectric layer is formed on a side of the first auxiliary structure away from the silicon-based substrate; a third surface of the dielectric layer away from the silicon-based substrate is a plane parallel to the silicon-based substrate;

[0015] forming a second photoresist layer on a side of the dielectric layer away from the silicon-based substrate; and etching the second photoresist layer to form a second auxiliary structure; a projection of the second auxiliary structure on the silicon-based substrate is located in the spacer area;

[0016] Using the second auxiliary structure as a mask, etching the dielectric layer to expose the anode;

[0017] The first auxiliary structure and the second auxiliary structure are removed by a wet stripping process to obtain a dielectric structure; the dielectric structure includes a first dielectric structure and a second dielectric structure; the second dielectric structure is arranged on a side of the first dielectric structure away from the silicon-based substrate; and in a direction parallel to the silicon-based substrate, the width of the second dielectric structure is greater than the width of the first dielectric structure; and the thickness of the first dielectric structure is greater than the thickness of the anode;

[0018] An organic light-emitting layer is formed on a side of the dielectric structure away from the silicon-based substrate; the organic light-emitting layer covering the anode is disconnected from the organic light-emitting layer covering the dielectric structure;

[0019] A cathode layer is formed on a side of the organic light emitting layer away from the silicon-based substrate.

[0020] In the present invention, the silicon-based OLED display panel includes a silicon-based substrate, and an anode, a dielectric structure, an organic light-emitting layer, and a cathode layer sequentially arranged on the silicon-based substrate. The anode is arranged in an array on the silicon-based substrate, and the dielectric structure is arranged in the spacing area between adjacent anodes; the dielectric structure may include a first dielectric structure and a second dielectric structure that are sequentially away from the substrate, and the width of the second dielectric structure is greater than the width of the first dielectric structure, and the thickness of the first dielectric structure is greater than the thickness of the anode, so that a gap of a special shape is formed between the dielectric structure and the anode, so that when the organic light-emitting layer is arranged in the whole layer, the organic light-emitting layer is disconnected due to the existence of the above-mentioned gap, specifically, the organic light-emitting layer covering the anode is disconnected from the organic light-emitting layer covering the dielectric structure, blocking the light crosstalk of the organic light-emitting layer between adjacent pixels, improving the display accuracy of each pixel, and thus improving the display effect of the entire silicon-based OLED display panel. In addition, the existence of the above-mentioned gap will not affect the whole surface setting of the cathode layer, that is, the cathode layer will not be disconnected in the above-mentioned gap, which is convenient for fixed signal input to the entire cathode layer, and there is no need to input signals to the divided cathode layer through redundant wiring, simplifying the wiring setting of the display panel, and improving the preparation efficiency of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic structural diagram of a silicon-based OLED display panel provided by an embodiment of the present invention;

[0022] Figure 2 for Figure 1 A schematic diagram of the enlarged structure of a local area A1 of a silicon-based OLED display panel;

[0023] Figure 3 A schematic diagram of the structure of a silicon-based OLED provided by an embodiment of the present invention;

[0024] Figure 4 It is a schematic diagram of the structure of silicon-based OLED in the prior art;

[0025] Figure 5 A schematic diagram of a process for preparing a silicon-based OLED display panel provided by an embodiment of the present invention;

[0026] Figure 6 A schematic diagram of a structure for forming an anode on a silicon-based substrate provided in an embodiment of the present invention;

[0027] Figure 7 A schematic structural diagram of a first auxiliary structure formed on an anode according to an embodiment of the present invention;

[0028] Figure 8 A schematic structural diagram of a dielectric layer formed on a first auxiliary structure provided by an embodiment of the present invention;

[0029] Fig. 9A schematic structural diagram of a second auxiliary structure formed on a dielectric layer provided by an embodiment of the present invention;

[0030] Fig.10 A schematic diagram of the structure after etching the dielectric layer using the second auxiliary structure as a mask provided in an embodiment of the present invention;

[0031] Fig.11 A schematic diagram of a structure provided by an embodiment of the present invention in which the first auxiliary structure and the second auxiliary structure are removed;

[0032] Fig.12 A schematic diagram of a structure for forming an organic light-emitting layer on a dielectric structure provided by an embodiment of the present invention;

[0033] Fig.13 A schematic structural diagram of forming a cathode layer on an organic light-emitting layer provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0034] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0035] The embodiment of the present invention provides a silicon-based OLED display panel, such as Figure 1 As shown, Figure 1 A schematic structural diagram of a silicon-based OLED display panel provided by an embodiment of the present invention, the silicon-based OLED display panel comprises: a silicon-based substrate 11;

[0036] A plurality of anodes 12 are disposed on one side of the silicon-based substrate 11; a spacer 121 is disposed between adjacent anodes 12;

[0037] The dielectric structure 13 is arranged on a side of the anode 12 away from the silicon-based substrate 11; the dielectric structure 13 is arranged in the spacer 121; the dielectric structure 13 includes a first dielectric structure 131 and a second dielectric structure 132; the second dielectric structure 132 is arranged on a side of the first dielectric structure 131 away from the silicon-based substrate 11; and in a direction parallel to the silicon-based substrate 11, the width of the second dielectric structure 132 is greater than the width of the first dielectric structure 131; and the thickness of the first dielectric structure 131 is greater than the thickness of the anode 12;

[0038] The organic light-emitting layer 14 is arranged on the side of the dielectric structure 13 away from the silicon-based substrate 11; the organic light-emitting layer 14 covering the anode 12 is disconnected from the organic light-emitting layer 14 covering the dielectric structure 13;

[0039] The cathode layer 15 is disposed on a side of the organic light emitting layer 14 away from the silicon-based substrate 11 .

[0040] Optionally, the organic light-emitting layer 14 of the silicon-based OLED display panel can be formed by evaporation, and the anode 12 and cathode layer 15 of the silicon-based OLED display panel can be formed by evaporation, sputtering, vapor deposition, ion beam deposition, electron beam deposition or laser ablation.

[0041] In an embodiment of the present invention, a silicon-based OLED display panel includes a silicon-based substrate, and an anode, a dielectric structure, an organic light-emitting layer, and a cathode layer sequentially arranged on the silicon-based substrate. The anode is arranged in an array on the silicon-based substrate, and the dielectric structure is arranged in the spacing area between adjacent anodes; the dielectric structure may include a first dielectric structure and a second dielectric structure that are sequentially away from the substrate, and the width of the second dielectric structure is greater than the width of the first dielectric structure, and the thickness of the first dielectric structure is greater than the thickness of the anode, so that a gap of a special shape is formed between the dielectric structure and the anode, so that when the organic light-emitting layer is arranged in the whole layer, the organic light-emitting layer is disconnected due to the existence of the above-mentioned gap, specifically, the organic light-emitting layer covering the anode is disconnected from the organic light-emitting layer covering the dielectric structure, blocking the light crosstalk of the organic light-emitting layer between adjacent pixels, improving the display accuracy of each pixel, and thus improving the display effect of the entire silicon-based OLED display panel. In addition, the existence of the above-mentioned gap will not affect the whole surface setting of the cathode layer, that is, the cathode layer will not be disconnected in the above-mentioned gap, which is convenient for fixed signal input to the entire cathode layer, and there is no need to input signals to the divided cathode layer through redundant wiring, simplifying the wiring setting of the display panel, and improving the preparation efficiency of the display panel.

[0042] The above is the core idea of ​​the present invention. The technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0043] The silicon-based OLED display panel is a solution in which an organic light-emitting diode (OLED) device is arranged on a monocrystalline silicon base layer, rather than a low-temperature polycrystalline silicon glass substrate, such as Micro-OLED or OLEDoS. At the same time, the driving circuit of the silicon-based OLED display panel can be a complementary metal oxide semiconductor (CMOS) circuit integrated on a silicon-based substrate 11. An anode 12, an organic light-emitting layer 14 and a cathode layer 15 can be formed on the silicon-based substrate 111 in sequence. The anode 12, the organic light-emitting layer 14 and the cathode layer 15 form an array of pixels on the silicon-based substrate 11, and the driving circuit can provide a driving current for the corresponding pixels. The advantage of the silicon-based OLED process is that it can accommodate more pixels in a smaller space. For example, the minimum pixel pitch of an ordinary OLED mobile phone screen is 44μm, while the silicon-based OLED can achieve 6.3μm, so the pixel density of the silicon-based OLED can reach more than 7 times that of the traditional OLED.

[0044] In this embodiment, an array of anodes 12 is formed on a silicon-based substrate 11, and adjacent anodes 12 are disconnected to form a spacer 121. A dielectric structure 13 is formed on the side of the anode 12 away from the silicon-based substrate 11, and the dielectric structure 13 is arranged in the spacer 121. Specifically, the dielectric structure 13 includes a first dielectric structure 131 and a second dielectric structure 132 that are sequentially away from the silicon-based substrate 11, and the width of the second dielectric structure 132 is greater than the first dielectric structure 131. Optionally, the first dielectric structure 131 and the second dielectric structure 132 can be designed as an integrated molding, and can be divided into two processes, forming the first dielectric structure 131 in the first process and forming the second dielectric structure 132 in the second process. The specific process is not limited in this embodiment. An organic light-emitting layer 14 is formed on the side of the dielectric structure 13 away from the silicon-based substrate 11. Due to the structural design of the dielectric structure 13, a special gap is formed between the dielectric structure 13 and the anode 12, and the organic light-emitting layer 14 is disconnected in the above gap, that is, the organic light-emitting layer 14 covering the anode 12 is disconnected from the organic light-emitting layer 14 covering the dielectric structure 13, thereby avoiding crosstalk between adjacent pixels due to the connected organic light-emitting layers.

[0045] It should be noted that the reference Figure 1, the width d2 of the second dielectric structure 132 is greater than the width d1 of the first dielectric structure 131, then the opening of the gap between the dielectric structure 13 and the anode 12 is not parallel to the silicon-based substrate 11, but has a certain tilting effect, so when the organic light-emitting layer 14 is evaporated, the organic light-emitting layer 14 is easily disconnected at the gap. In addition, the thickness d3 of the first dielectric structure 131 is greater than the thickness d4 of the anode 12, then in this embodiment, by adjusting the thickness d3 of the first dielectric structure 131, the gap opening formed between the second dielectric structure 132 and the anode 12 is not too small, thereby avoiding electrical connection of the organic light-emitting layer 14 at the gap opening. In this embodiment, by setting the special structure of the dielectric structure 13, when the organic light-emitting layer 14 is evaporated on the entire layer, the organic light-emitting layer 14 can be disconnected at the gap, without the need to add another process to disconnect the organic light-emitting layer 14 at the gap, effectively saving the process and preventing the problem of light crosstalk of the organic light-emitting layer between adjacent pixels. In addition, after the organic light-emitting layer 14 is formed, the gap between the organic light-emitting layer 14 covering the anode 12 and the organic light-emitting layer 14 covering the dielectric structure 13 is small. When the cathode layer 15 is formed on the side of the organic light-emitting layer 14 away from the silicon-based substrate 11, the cathode layer 15 is not disconnected in the above gap, forming a cathode layer 15 covering the entire display panel, thereby improving the manufacturing efficiency of the display panel. This embodiment effectively realizes the disconnection of the organic light-emitting layer 14 at the gap without increasing the manufacturing process of the organic light-emitting layer 14, thereby effectively avoiding the crosstalk problem.

[0046] Figure 2 for Figure 1 The enlarged structural diagram of the local area A1 of the silicon-based OLED display panel is shown in FIG. Figure 1 and Figure 2 , Optionally, in the first direction X parallel to the silicon-based substrate 11, the first distance L1 between the anode 12 and the first dielectric structure 131 is ≥ H1; wherein H1 is the thickness of the organic light-emitting layer 14; in the first direction X parallel to the silicon-based substrate 11, the first distance L1 between the anode 12 and the first dielectric structure 131 is ≥ L2; wherein L2 is the second distance between the edge of the second dielectric structure 132 and the edge of the first dielectric structure 131 along the first direction X. In this embodiment, the first dielectric structure 131 and the second dielectric structure 132 are both located in the spacing area 121 in a plane parallel to the silicon-based substrate 11. Specifically, along the first direction X (the first direction is the direction parallel to the silicon-based substrate 11), the first dielectric structure 131 forms a first distance L1 with the anode 12, and the edge of the second dielectric structure 132 forms a second distance L2 with the edge of the first dielectric structure 131. In this embodiment, L1 ≥ L2, and the distance between the edge of the second dielectric structure 132 and the anode 12 is (L1-L2). Then, in a plane parallel to the silicon-based substrate 11, the projection of the dielectric structure 13 is located in the spacing region. Figure 3 and Figure 4As shown, Figure 3 A schematic diagram of the structure of a silicon-based OLED provided by an embodiment of the present invention, Figure 4 FIG. 1 is a schematic diagram of the structure of a silicon-based OLED in the prior art. Figure 3 As shown, in this embodiment, the projection of the dielectric structure 13 is located in the spacing area, so the area where the anode 12 is located can be completely exposed, and the organic light-emitting layer 14 forms a light-emitting area with a width of d5 along the first direction X, as shown in FIG. Figure 4 As shown, in the prior art, the silicon-based OLED includes a silicon-based substrate 11' and an anode 12', a pixel defining layer 13', an organic light-emitting layer 14' and a cathode layer 15' which are sequentially arranged on the silicon-based substrate 11'. In a plane parallel to the silicon-based substrate 11', the pixel defining layer 13' and the organic light-emitting layer 14' overlap. After the anode 12' is covered by the pixel defining layer 13', a certain opening range is lost, so that the light-emitting area of ​​the anode 12' is reduced. Figure 3 and Figure 4 , if the areas of anode 12 and anode 12' are the same, but Figure 3 The width d5 ​​of the light emitting area is greater than Figure 4 The width d6 of the light-emitting area formed, in this embodiment, the design of the dielectric structure 13 can increase the area of ​​the light-emitting area of ​​each pixel, improve the light-emitting efficiency and light-emitting brightness, thereby improving the display effect of the entire display panel. Figure 2 The first distance L1 is greater than the thickness H1 of the organic light-emitting layer 14 , so that when the organic light-emitting layer 14 is formed by evaporation, a structure in which the organic light-emitting layer 14 surrounds the side of the anode 12 can be formed, so as to further increase the light-emitting area of ​​the pixel and improve the light-emitting efficiency of the display panel.

[0047] Continue to refer Figure 2 Optionally, a third distance between the first surface s1 of the second dielectric structure 132 close to the silicon-based substrate 11 and the second surface s2 of the anode 12 away from the silicon-based substrate 11 is H2; the thickness H1 of the organic light-emitting layer 14 and the third distance H2 satisfy the following relationship:

[0048]

[0049] Among them, h 0 is the thickness of the cathode layer 15. In this embodiment, the surface of the second dielectric structure 132 close to the silicon-based substrate 11 may be referred to as the first surface s1, and the surface of the anode 12 away from the silicon-based substrate 11 may be referred to as the second surface s2. Figure 2As shown, the distance between the first surface s1 and the second surface in the direction perpendicular to the silicon-based substrate 11 is a third distance H2. In this embodiment, the thickness H1 of the organic light-emitting layer 14 and the third distance H2 can be set to satisfy the above relationship, so as to ensure that the organic light-emitting layer 14 is disconnected between the anode 12 and the dielectric structure 13, and to avoid the situation where the cathode layer 15 is disconnected due to the excessive step difference between the organic light-emitting layer 14 covering the anode 12 and the organic light-emitting layer 14 covering the dielectric structure 13. In this embodiment, without the need for additional processes, it can effectively ensure that the organic light-emitting layer 14 is disconnected between the anode 12 and the dielectric structure 13, and ensure that the cathode layer 15 is continuous between the anode 12 and the dielectric structure 13, thereby effectively preventing the light crosstalk phenomenon of the display panel.

[0050] In this embodiment, the anode 12 can be formed by metal plating on the silicon substrate 11 to form a metal layer, and the metal layer is etched to form a plurality of anodes 12. Optionally, the material of the anode 12 includes at least one of the following: nickel, titanium, titanium nitride, aluminum and indium tin oxide. Optionally, the material of the dielectric structure 13 is silicon oxide or silicon nitride, and the specific composition thereof is not specifically limited in this embodiment. Optionally, the thickness of the anode 12 can range from 50nm to 100nm; the thickness of the dielectric structure 13 can range from 400nm to 500nm, so as to form a suitable step difference between the anode 12 and the dielectric structure 13, so as to realize the disconnection of the organic light-emitting layer 14 between the anode 12 and the dielectric structure 13, and ensure that the cathode layer 15 is continuous between the anode 12 and the dielectric structure 13. It should be noted that the thickness range of the anode 12 and the dielectric structure 13 is only an example provided in this embodiment, and the thickness range can be set according to actual needs. The film thickness range is not specifically limited in this embodiment.

[0051] Based on the above embodiments, continue to refer to Figure 2 and Figure 3 , the values ​​of the first distance L1 and the second distance L2 are adjustable to adjust the light-emitting area of ​​the anode 12. In this embodiment, the distance (L1-L2) between the edge of the second dielectric structure 132 and the anode 12 can be adjusted by adjusting the values ​​of the first distance L1 and the second distance L2. For example, when the value of (L1-L2) is small, the light-emitting area of ​​the anode 12 is small, and when the value of (L1-L2) is large, the light-emitting area of ​​the anode 12 is large. The user can adjust the above distance value to obtain the desired light-emitting area. Of course, the second dielectric structure 132 can also overlap with the anode 12, so as to further achieve different light-emitting areas.

[0052] Based on the same concept, an embodiment of the present invention further provides a method for preparing a silicon-based OLED display panel, so as to prepare the silicon-based OLED display panel provided by any embodiment of the present invention. Figure 5A schematic diagram of a process for preparing a silicon-based OLED display panel provided by an embodiment of the present invention is shown in FIG. Figure 5 As shown, the method of this embodiment includes the following steps:

[0053] Step S101: providing a silicon-based substrate.

[0054] Step S102: forming an anode on a silicon-based substrate.

[0055] Figure 6 The schematic diagram of the structure of forming an anode on a silicon-based substrate provided by an embodiment of the present invention. Figure 6 As shown, in this embodiment, a conventional metal plating process can be used to form a metal layer on a silicon-based substrate 11, and the metal layer includes at least one of the following: nickel, titanium, titanium nitride, aluminum and indium tin oxide, and the thickness range can be 50nm to 100nm, and then an array-arranged anode 12 is formed by an etching process.

[0056] Step S103, forming a first photoresist layer on the side of the anode away from the silicon-based substrate; and etching the first photoresist layer to form first auxiliary structures corresponding to the anodes one by one; the first auxiliary structures cover the corresponding anodes.

[0057] Figure 7 A schematic diagram of a structure in which a first auxiliary structure is formed on an anode according to an embodiment of the present invention. Figure 7 As shown, a first photoresist layer is formed on the anode 12. For example, the thickness of the first photoresist layer can be 400 nm. After the first photoresist layer is subjected to processes such as exposure, development, and baking, a first auxiliary structure 21 corresponding to the anode 12 is formed. In a plane parallel to the silicon-based substrate 11, the first auxiliary structure 21 covers the corresponding anode 12. The first auxiliary structure 21 plays a supporting role in the subsequent film preparation process. The first auxiliary structure 21 will be removed in the subsequent process to form a gap between the anode 12 and the dielectric structure.

[0058] Step S104 , forming a dielectric layer on a side of the first auxiliary structure away from the silicon-based substrate; a third surface of the dielectric layer away from the silicon-based substrate is a plane parallel to the silicon-based substrate.

[0059] Figure 8 Schematic diagram of a structure in which a dielectric layer is formed on a first auxiliary structure provided in an embodiment of the present invention. Figure 8 As shown, a dielectric layer 131 is formed on the first auxiliary structure 21, and the third surface s3 of the dielectric layer 131 away from the silicon substrate 11 is parallel to the plane of the silicon substrate 11. Optionally, the dielectric layer 131 may be made of silicon oxide or silicon nitride, and may be 500 nm thick.

[0060] Optionally, a dielectric layer 131 is formed on a side of the first auxiliary structure 21 away from the silicon-based substrate 11; a third surface s3 of the dielectric layer 131 away from the silicon-based substrate 11 is parallel to the plane of the silicon-based substrate 11, which may specifically include: preparing the dielectric layer 131 by processes such as flow chemical vapor deposition, chemical mechanical polishing, spin coating or spraying, so that the third surface s3 of the dielectric layer 131 away from the silicon-based substrate 11 is parallel to the plane of the silicon-based substrate 11.

[0061] Step S105, forming a second photoresist layer on a side of the dielectric layer away from the silicon-based substrate; and etching the second photoresist layer to form a second auxiliary structure; the projection of the second auxiliary structure on the silicon-based substrate is located in the spacer area.

[0062] Fig. 9 A schematic diagram of a structure in which a second auxiliary structure is formed on a dielectric layer according to an embodiment of the present invention. Fig. 9 As shown, a second photoresist layer can be formed on the dielectric layer 131. Exemplarily, the thickness of the second photoresist layer can be 500 nm. The second photoresist layer is subjected to processes such as exposure, development, and baking to form a second auxiliary structure 22. The second auxiliary structure 22 serves as a mask for etching the dielectric layer 131, and its projection can be located within the spacer area 121.

[0063] Step S106: etching the dielectric layer using the second auxiliary structure as a mask to expose the first auxiliary structure.

[0064] Fig.10 A schematic diagram of the structure after etching the dielectric layer using the second auxiliary structure as a mask provided by an embodiment of the present invention. Fig.10 As shown, the dielectric layer 131 is etched with the second auxiliary structure 22 as a mask. Optionally, the dielectric layer 131 is etched with the second auxiliary structure 22 as a mask to expose the first auxiliary structure 21, which may include: using the second auxiliary structure 22 as a mask, etching the dielectric layer 131 by an etcher until the fourth surface s4 of the first auxiliary structure 21 away from the silicon-based substrate 11 is exposed and then the etching is stopped; the etching gas of the etcher is a mixture of argon, tetrafluoromethane and perfluorobutylene. On the basis of the above embodiment, in order to ensure complete etching, a certain over-etching amount can be set, that is, part of the thickness of the first auxiliary structure 21 is etched away to ensure that the dielectric layer 131 between adjacent second auxiliary structures 22 is completely etched away. On the basis of the above embodiment, the etching process for the dielectric layer 131 includes but is not limited to ICP etching, CCP etching, wet etching, etc.

[0065] Step S107, using a wet degumming process to remove the first auxiliary structure and the second auxiliary structure to obtain a dielectric structure; the dielectric structure includes a first dielectric structure and a second dielectric structure; the second dielectric structure is arranged on a side of the first dielectric structure away from the silicon-based substrate; and in a direction parallel to the silicon-based substrate, the width of the second dielectric structure is greater than the width of the first dielectric structure; and the thickness of the first dielectric structure is greater than the thickness of the anode.

[0066] Fig.11 A schematic diagram of a structure provided by an embodiment of the present invention where the first auxiliary structure and the second auxiliary structure are removed. Fig.10 and Fig.11 As shown, the first auxiliary structure 21 and the second auxiliary structure 22 are removed by a wet degumming process to form Fig.11 The dielectric structure 13 shown includes a first dielectric structure 131 and a second dielectric structure 132. The width of the second dielectric structure 132 is greater than the width of the first dielectric structure 131. In this embodiment, the dielectric structure 13 is formed by means of the first auxiliary structure 21, and the thickness of the first auxiliary structure 21 is equal to the thickness of the first dielectric structure 131. Since the thickness of the first auxiliary structure 21 is greater than the thickness of the anode 12, the thickness of the first dielectric structure 131 is greater than the thickness of the anode 12.

[0067] It should be noted that the thickness parameters of the anode 12, the first auxiliary structure 21, the dielectric layer 131, the second photoresist layer, etc. mentioned in this embodiment are all examples provided in this embodiment, and their thickness ranges can be set according to actual needs. This embodiment does not specifically limit the film thickness range.

[0068] Step S108, forming an organic light-emitting layer on the side of the dielectric structure away from the silicon-based substrate; the organic light-emitting layer covering the anode is disconnected from the organic light-emitting layer covering the dielectric structure.

[0069] Step S109 , forming a cathode layer on a side of the organic light-emitting layer away from the silicon-based substrate.

[0070] Fig.12 A schematic diagram of a structure for forming an organic light-emitting layer on a dielectric structure provided by an embodiment of the present invention. Fig.13 The schematic diagram of the structure of forming a cathode layer on an organic light-emitting layer provided by an embodiment of the present invention. Fig.12 and Fig.13As shown, after the first auxiliary structure and the second auxiliary structure are removed by wet etching to form the dielectric structure 13, the organic light-emitting layer 14 and the cathode layer 15 can be sequentially arranged on the dielectric structure 13 by using the existing process, and the organic light-emitting layer 14 is disconnected between the anode 12 and the dielectric structure 13 by controlling the width and thickness of the first dielectric structure 131 and the second dielectric structure 132, and the cathode layer 15 is connected between the anode 12 and the dielectric structure 13, effectively avoiding the problem of crosstalk between adjacent pixels due to the organic light-emitting layer 14. It should be noted that all the above film thickness values ​​are only examples and can be adjusted according to the specific process.

[0071] In an embodiment of the present invention, a silicon-based OLED display panel includes a silicon-based substrate, and an anode, a dielectric structure, an organic light-emitting layer, and a cathode layer sequentially arranged on the silicon-based substrate. The anode is arranged in an array on the silicon-based substrate, and the dielectric structure is arranged in the spacing area between adjacent anodes; the dielectric structure may include a first dielectric structure and a second dielectric structure that are sequentially away from the substrate, and the width of the second dielectric structure is greater than the width of the first dielectric structure, and the thickness of the first dielectric structure is greater than the thickness of the anode, so that a gap of a special shape is formed between the dielectric structure and the anode, so that when the organic light-emitting layer is arranged in the whole layer, the organic light-emitting layer is disconnected due to the existence of the above-mentioned gap, specifically, the organic light-emitting layer covering the anode is disconnected from the organic light-emitting layer covering the dielectric structure, blocking the light crosstalk of the organic light-emitting layer between adjacent pixels, improving the display accuracy of each pixel, and thus improving the display effect of the entire silicon-based OLED display panel. In addition, the existence of the above-mentioned gap will not affect the whole surface setting of the cathode layer, that is, the cathode layer will not be disconnected in the above-mentioned gap, which is convenient for fixed signal input to the entire cathode layer, and there is no need to input signals to the divided cathode layer through redundant wiring, simplifying the wiring setting of the display panel, and improving the preparation efficiency of the display panel.

[0072] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A silicon-based OLED display panel, characterized in that: include: Silicon-based substrate; A plurality of anodes are arranged on one side of the silicon-based substrate; A spacing area is provided between adjacent anodes; A dielectric structure is arranged on a side of the anode away from the silicon-based substrate; the dielectric structure is arranged in the spacing area; the dielectric structure includes a first dielectric structure and a second dielectric structure; The second dielectric structure is arranged on a side of the first dielectric structure away from the silicon-based substrate; and in a direction parallel to the silicon-based substrate, the width of the second dielectric structure is greater than the width of the first dielectric structure; and the thickness of the first dielectric structure is greater than the thickness of the anode; An organic light-emitting layer is arranged on a side of the dielectric structure away from the silicon-based substrate; The organic light-emitting layer covering the anode is disconnected from the organic light-emitting layer covering the dielectric structure; The cathode layer is arranged on a side of the organic light emitting layer away from the silicon-based substrate.

2. The silicon-based OLED display panel according to claim 1, characterized in that: In a first direction parallel to the silicon-based substrate, a first distance L1 between the anode and the first dielectric structure is ≥ H1; wherein H1 is the thickness of the organic light-emitting layer; In a first direction parallel to the silicon-based substrate, a first distance L1≥L2 between the anode and the first dielectric structure; wherein L2 is a second distance between an edge of the second dielectric structure and an edge of the first dielectric structure along the first direction.

3. The silicon-based OLED display panel according to claim 2, characterized in that: A third distance between the second dielectric structure close to the first surface of the silicon-based substrate and the anode away from the second surface of the silicon-based substrate is H2; The thickness H1 of the organic light-emitting layer and the third distance H2 satisfy the following relationship: Wherein, h0 is the thickness of the cathode layer.

4. The silicon-based OLED display panel according to claim 2, characterized in that: The values ​​of the first distance L1 and the second distance L2 are adjustable to adjust the light emitting area of ​​the anode.

5. The silicon-based OLED display panel according to claim 1, characterized in that: The material of the anode includes at least one of the following: nickel, titanium, titanium nitride, aluminum and indium tin oxide.

6. The silicon-based OLED display panel according to claim 1, characterized in that: The material of the dielectric structure is silicon oxide or silicon nitride.

7. A method for preparing a silicon-based OLED display panel, characterized in that: The silicon-based OLED display panel according to any one of claims 1 to 6 is formed, comprising: Providing a silicon-based substrate; forming an anode on the silicon-based substrate; Forming a first photoresist layer on a side of the anode away from the silicon-based substrate; etching the first photoresist layer to form a first auxiliary structure corresponding to the anode one by one; the first auxiliary structure covers the corresponding anode; A dielectric layer is formed on a side of the first auxiliary structure away from the silicon-based substrate; a third surface of the dielectric layer away from the silicon-based substrate is a plane parallel to the silicon-based substrate; forming a second photoresist layer on a side of the dielectric layer away from the silicon-based substrate; and etching the second photoresist layer to form a second auxiliary structure; a projection of the second auxiliary structure on the silicon-based substrate is located in the spacer area; Using the second auxiliary structure as a mask, etching the dielectric layer to expose the first auxiliary structure; The first auxiliary structure and the second auxiliary structure are removed by a wet stripping process to obtain a dielectric structure; the dielectric structure includes a first dielectric structure and a second dielectric structure; the second dielectric structure is arranged on a side of the first dielectric structure away from the silicon-based substrate; and in a direction parallel to the silicon-based substrate, the width of the second dielectric structure is greater than the width of the first dielectric structure; and the thickness of the first dielectric structure is greater than the thickness of the anode; An organic light-emitting layer is formed on a side of the dielectric structure away from the silicon-based substrate; the organic light-emitting layer covering the anode is disconnected from the organic light-emitting layer covering the dielectric structure; A cathode layer is formed on a side of the organic light emitting layer away from the silicon-based substrate.

8. The method for preparing a silicon-based OLED display panel according to claim 7, characterized in that: forming a dielectric layer on a side of the first auxiliary structure away from the silicon-based substrate; The third surface of the dielectric layer away from the silicon-based substrate is parallel to the plane of the silicon-based substrate, and includes: The dielectric layer is formed by processes such as flow chemical vapor deposition, chemical mechanical polishing, spin coating or spray coating, so that the third surface of the dielectric layer away from the silicon-based substrate is parallel to the plane of the silicon-based substrate.

9. The method for preparing a silicon-based OLED display panel according to claim 7, characterized in that: The dielectric layer is etched using the second auxiliary structure as a mask to expose the first auxiliary structure, comprising: The dielectric layer is etched by an etcher using the second auxiliary structure as a mask until a fourth surface of the first auxiliary structure away from the silicon-based substrate is exposed; the etching gas of the etcher is a mixture of argon, tetrafluoromethane and perfluorobutene.

10. The method for preparing a silicon-based OLED display panel according to claim 9, characterized in that: The etching process of the dielectric layer is ICP etching, CCP etching or wet etching.

Images