Silicon-based OLED (Organic Light Emitting Diode) micro display structure capable of avoiding transverse crosstalk between pixels
By introducing an island-shaped intermediate layer into the charge generation layer, the problem of lateral crosstalk between pixels in silicon-based OLED micro displays is solved, and the effect of reducing device voltage and avoiding lateral crosstalk is achieved, which improves the display effect and reduces the preparation cost.
Patent Information
- Application Number
- CN202411732466.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-29
- Publication Date
- 2025-04-04
AI Technical Summary
The pixel spacing of silicon-based OLED microdisplays is small, resulting in lateral crosstalk between pixels, affecting the display effect, and the existing isolation column methods increase the production cost.
An island-shaped intermediate layer is introduced into the charge generation layer, and prepared by a vacuum evaporation device, an island-shaped area and a blank area are formed. The island-shaped area enhances longitudinal conductivity, and the blank area suppresses transverse conductivity, thereby avoiding transverse crosstalk.
While reducing device voltage, lateral crosstalk between pixels is avoided, display effect is improved, and preparation cost is reduced.
Smart Images
Figure CN119767970A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of display technology, and in particular to a silicon-based OLED micro-display structure for avoiding lateral crosstalk between pixels. Background Art
[0002] With the development of virtual reality, augmented reality and other technologies, high-performance micro-display technology is needed as a support. The use of a stacked light-emitting device structure can effectively improve the efficiency and life of silicon-based OLED micro-displays, but it also leads to an increase in the device operating voltage. By introducing a suitable intermediate layer in the charge generation layer, the device conductivity can be effectively enhanced and the device operating voltage can be reduced. However, the pixel pitch of the micro-display is small, and the lateral crosstalk between pixels will cause color distortion, which greatly affects the display effect.
[0003] In order to avoid lateral crosstalk between pixels, isolation columns are usually used to block the lateral crosstalk, but this method will increase the preparation cost. Summary of the invention
[0004] The object of the present invention is to provide a silicon-based OLED micro-display structure that avoids lateral crosstalk between pixels, which can reduce device voltage while avoiding lateral crosstalk.
[0005] In order to achieve the above object, the present invention adopts the following technical solution: The light-emitting device structure consists of a substrate, a first electrode layer, a first light-emitting unit, a charge generation layer, a second light-emitting unit and a second electrode layer from bottom to top.
[0006] Among them, the charge generation layer is composed of an N-type charge generation layer, an intermediate layer and a P-type charge generation layer from bottom to top, and the intermediate layer is made of HAT-CN, MoO3, LiF or Liq, or a metal monomer or an alloy composed of any several metals among aluminum, silver, ytterbium, copper, gold, lithium, magnesium, bismuth or germanium; the intermediate layer includes a plurality of island areas and blank areas, and the island areas are freely distributed in the blank areas. The thickness of the intermediate layer is 0.1-5 nm, the line width of the island area is 10-1000 nm, and the line width of the blank area is 10-2000 nm.
[0007] The preparation process of the intermediate layer is: using vacuum evaporation equipment for evaporation, the evaporation rate is 0.001-1 nm / s, the vacuum degree is 10 -10 -10 -4 Pa, during evaporation, the material gathers in the nucleation area to form an island area, and the non-nucleation area forms a blank area. The N-type charge generation layer and the P-type charge generation layer at the blank area are in direct contact.
[0008] Specifically, the first light-emitting unit and the second light-emitting unit are composed of a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer in sequence from bottom to top.
[0009] Specifically, the first electrode layer is an array electrode, and the second electrode is a layered common electrode.
[0010] Compared with the prior art, the present invention has the following advantages: By introducing an island-shaped intermediate layer in the charge generation layer, the device voltage can be reduced without enhancing the lateral conductivity, wherein the island area is used to enhance the longitudinal conductivity of the charge generation layer, and the blank area is used to suppress the lateral conductivity of the charge generation layer to avoid lateral crosstalk. BRIEF DESCRIPTION OF THE DRAWINGS
[0011] Figure 1 It is a schematic structural diagram of the light emitting device of the present invention.
[0012] Figure 2 It is a schematic diagram of the structure of the intermediate layer of the present invention.
[0013] Among them, the substrate 100, the first electrode 200, the first light-emitting unit 300, the charge generation layer 400, the second light-emitting unit 500, the second electrode 600, the N-type charge generation layer 410, the intermediate layer 420, the P-type charge generation layer 430, the island region 421, and the blank region 422. DETAILED DESCRIPTION
[0014] Example: Refer to Figure 1 As shown, the present invention discloses a light-emitting device, and the preparation order of the light-emitting device structure is to first prepare a first electrode layer 200 with an array pattern on a substrate 100, and then sequentially evaporate a first light-emitting unit 300, a charge generating layer 400, a second light-emitting unit 500 and a second electrode layer 600 through a vacuum thermal evaporation device.
[0015] The first light emitting unit 300 is a blue light emitting unit, and the second light emitting unit 500 is a yellow light emitting unit. A sealing layer and a color filter are prepared on the basis of the light emitting device to form a full-color display micro display.
[0016] The charge generation layer 400 is composed of an N-type charge generation layer 410, an intermediate layer 420, and a P-type charge generation layer 430. The N-type charge generation layer 410 uses a 15 nm bathophenanthroline derivative, the P-type charge generation layer 420 uses a 10 nm benzidine derivative, and the intermediate layer 430 uses silver with a thickness of 1 nm. -6 The intermediate layer was prepared at a evaporation rate of 0.02 nm / s under Pa to form Figure 2 The structure in Figure 2The line width of the island region 421 is 200 nm to enhance the longitudinal conductivity, and the line width of the blank region 422 is 300 nm. Comparative Example: In order to illustrate the advantages of the present invention, another full-color micro display is prepared as a comparison, and its charge generation layer only has an N-type charge generation layer and a P-type charge generation layer, and other structures are consistent with the embodiment. The micro displays prepared in the embodiment and the comparative example are compared.
[0017] Charge generation layer structure Turn-on voltage (V) Color gamut (NTSC) Comparative Example N-type charge generation layer / P-type charge generation layer 5.1 68% Example N-type charge generation layer / island-shaped intermediate layer / P-type charge generation layer 4.9 68%
[0018] As shown in the table, the turn-on voltage of the embodiment is lower than that of the comparative example, indicating that the intermediate layer improves the longitudinal conductivity. At the same time, the two have the same color gamut, indicating that the introduction of the intermediate layer does not improve the lateral conductivity, and there is no color distortion due to lateral crosstalk.
Claims
1. A silicon-based OLED microdisplay structure for avoiding lateral crosstalk between pixels, characterized in that The light-emitting device is composed of a substrate, a first electrode layer, a first light-emitting unit, a charge generation layer, a second light-emitting unit and a second electrode layer from bottom to top; wherein the charge generation layer is composed of an N-type charge generation layer, an intermediate layer and a P-type charge generation layer from bottom to top, and the intermediate layer is made of HAT-CN, MoO3, LiF or Liq, or a metal monomer or an alloy composed of any of several metals among aluminum, silver, ytterbium, copper, gold, lithium, magnesium, bismuth or germanium; the intermediate layer includes a plurality of island regions and blank regions, the island regions are freely distributed in the blank regions, the intermediate layer has a thickness of 0.1-5 nm, the line width of the island regions is 10-1000 nm, and the line width of the blank regions is 10-2000 nm.
2. A silicon-based OLED microdisplay structure for avoiding lateral crosstalk between pixels as claimed in claim 1, characterized in that The first light-emitting unit and the second light-emitting unit are composed of a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer in order from bottom to top.
3. A silicon-based OLED microdisplay structure for avoiding lateral crosstalk between pixels as claimed in claim 1, characterized in that The first electrode layer is an array electrode, and the second electrode is a layered common electrode.
4. A process for preparing a silicon-based OLED microdisplay structure to avoid lateral crosstalk between pixels, characterized in that The middle layer is evaporated by vacuum evaporation equipment, the evaporation rate is 0.001-1 nm / s, and the vacuum degree is 10 -10 -10 -4 Pa, during evaporation, the material gathers in the nucleation area to form an island area, and the non-nucleation area forms a blank area. The N-type charge generation layer and the P-type charge generation layer at the blank area are in direct contact.