OLED strong microcavity anode structure and preparation method thereof, display panel

Abstract

The present application relates to the field of semiconductor display technology, and discloses an OLED strong microcavity anode structure, a preparation method thereof, and a display panel. The OLED strong microcavity anode structure includes: a substrate; an anode arranged at intervals on the substrate, the anode including: a metal electrode and a transparent conductive layer located on the metal electrode, the metal electrodes corresponding to different color sub-pixels have different heights, and the upper surfaces of the transparent conductive layers on the different metal electrodes are at the same height; and a pixel definition layer arranged between adjacent anodes. The flattening of the strong microcavity resonance structure is achieved, which effectively improves the efficiency and light color of the OLED device, reduces the risk of short circuits in the functional layers of the device, and improves the product yield.

Description

Technical Field

[0001] The present application relates to the field of semiconductor display technology, and in particular to an OLED strong microcavity anode structure and a preparation method thereof, and a display panel. Background Art

[0002] Due to the different wavelengths of the three colors of RGB, the relative thickness between the anode and the cathode is different (optical path difference), resulting in different light extraction efficiencies. Therefore, the traditional R / G / B sub-pixels use anodes of the same thickness, which can no longer meet the requirements of high brightness and high color gamut. In order to improve the efficiency and light color of OLED devices, a device structure with strong microcavity resonance is generally used, that is, the anode thickness of the R / G / B sub-pixels is different, thereby obtaining different cavity lengths to match the wavelengths of different RGB colors. Reference Figure 1 , by stacking transparent conductive layers of different thicknesses on the metal electrodes, the anode thickness of the R / G / B sub-pixels is managed differently, but, Figure 1 The structure shown is likely to cause disconnection between the OLED functional layer and the cathode layer, resulting in a low yield rate. Summary of the invention

[0003] The embodiments of the present application provide an OLED strong microcavity anode structure and a preparation method thereof, and a display panel, which achieve the flattening of the strong microcavity resonance structure, effectively improve the efficiency and light color of the OLED device, reduce the risk of short circuits in the functional layers within the device, and improve the product yield.

[0004] In a first aspect, the present application provides an OLED strong microcavity anode structure, including:

[0005] substrate;

[0006] Anodes are arranged at intervals on the substrate, the anodes comprising: a metal electrode and a transparent conductive layer located on the metal electrode, the metal electrodes corresponding to sub-pixels of different colors have different heights, and the upper surfaces of the transparent conductive layers on the different metal electrodes are at the same height; and

[0007] A pixel definition layer is disposed between adjacent anodes.

[0008] Optionally, the OLED strong microcavity anode structure also includes: a high-transmittance thin film layer located between the metal electrode and the transparent conductive layer; the high-transmittance thin film layer is made of a high-transmittance dielectric material, and a through opening directly reaching the metal electrode is provided on the high-transmittance thin film layer, and the transparent conductive layer is also filled in the through opening, so that the transparent conductive layer is conductive to the metal electrode.

[0009] Optionally, the OLED strong microcavity anode structure also includes: a high-transmittance thin film layer covering the substrate and the metal electrode; the high-transmittance thin film layer is made of a high-transmittance dielectric material, the transparent conductive layer is located on the high-transmittance thin film layer, and the high-transmittance thin film layer is provided with a through opening directly reaching the metal electrode, and the transparent conductive layer is also filled in the through opening, so that the transparent conductive layer is conductive to the metal electrode.

[0010] Optionally, the upper surfaces of the high-transmittance film layers are all at the same height.

[0011] Optionally, the dielectric material is SiO.

[0012] In a second aspect, an embodiment of the present application provides a display panel, including:

[0013] Any one of the OLED strong microcavity anode structures of the first aspect;

[0014] OLED functional layer, cathode layer and thin film encapsulation layer located above the OLED strong microcavity anode structure.

[0015] In a third aspect, an embodiment of the present application provides a method for preparing an OLED strong microcavity anode structure, the method being used to prepare any one of the OLED strong microcavity anode structures in the first aspect, the method comprising:

[0016] Preparing metal electrodes arranged at intervals and having different heights on a substrate;

[0017] Depositing a transparent conductive material on the metal electrode, and planarizing the deposited layer formed by the transparent conductive material to obtain a transparent conductive layer;

[0018] A dielectric material is deposited, and a deposition layer formed by the dielectric material is exposed, developed, and etched to obtain a pixel definition layer for blocking adjacent anodes.

[0019] In a fourth aspect, an embodiment of the present application provides a method for preparing an OLED strong microcavity anode structure, the method being used to prepare any one of the OLED strong microcavity anode structures in the first aspect, the method comprising:

[0020] Preparing metal electrodes that are spaced apart and have different heights on a substrate;

[0021] Depositing a high-transmittance dielectric material on the substrate comprising the metal electrode to obtain a high-transmittance thin film layer;

[0022] Performing exposure, development and etching treatment on the high-transmittance thin film layer to form a through opening on the high-transmittance thin film layer directly reaching the metal electrode;

[0023] Depositing a transparent conductive material on the high-transmittance thin film layer, and performing a planarization process on the deposited layer formed by the transparent conductive material to obtain a transparent conductive layer;

[0024] Performing exposure, development and etching treatment on the transparent conductive layer so that the transparent conductive layers located above different metal electrodes are disconnected from each other;

[0025] A dielectric material is deposited, and a deposition layer formed by the dielectric material is exposed, developed, and etched to obtain a pixel definition layer for blocking adjacent anodes.

[0026] In a fifth aspect, an embodiment of the present application provides a method for preparing an OLED strong microcavity anode structure, the method being used to prepare any one of the OLED strong microcavity anode structures in the first aspect, the method comprising:

[0027] Preparing metal electrodes that are spaced apart and have different heights on a substrate;

[0028] Depositing a high-transmittance dielectric material on the substrate including the metal electrode, and performing a planarization process on the deposited layer formed by the high-transmittance dielectric material to obtain a high-transmittance thin film layer;

[0029] Performing exposure, development and etching treatment on the high-transmittance thin film layer to form a through opening on the high-transmittance thin film layer directly reaching the metal electrode;

[0030] Depositing a transparent conductive layer on the high-transmittance thin film layer;

[0031] Performing exposure, development and etching treatment on the transparent conductive layer so that the transparent conductive layers located above different metal electrodes are disconnected from each other;

[0032] A dielectric material is deposited, and a deposition layer formed by the dielectric material is exposed, developed, and etched to obtain a pixel definition layer for blocking adjacent anodes.

[0033] Optionally, the planarizing the deposited layer formed by the high-transmittance dielectric material specifically includes: planarizing the deposited layer formed by the high-transmittance dielectric material using a chemical mechanical polishing (CMP) process.

[0034] The OLED strong microcavity anode structure and its preparation method, and display panel provided in the embodiments of the present application realize the flattening of the strong microcavity resonance structure by configuring metal electrodes of different heights for sub-pixels of different colors and flattening treatment, which effectively improves the efficiency and light color of the OLED device while reducing the risk of short circuits in each functional layer in the device and improving the product yield. Furthermore, by adding a high-transmittance thin film layer between the metal electrode and the transparent conductive layer, the transmittance of light in the device can be increased, thereby improving the light extraction efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. Obviously, the drawings introduced below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0036] Figure 1 It is a structural schematic diagram of an existing OLED strong microcavity anode structure;

[0037] Figure 2-1 A schematic diagram of a first structural embodiment of an OLED strong microcavity anode structure provided in an embodiment of the present application;

[0038] Figure 2-2 Based on an embodiment of the present application Figure 2-1 A schematic diagram of the structure of a display panel obtained by the structure shown;

[0039] Figure 3-1 A second structural schematic diagram of an OLED strong microcavity anode structure provided in an embodiment of the present application;

[0040] Figure 3-2 A third structural schematic diagram of an OLED strong microcavity anode structure provided in an embodiment of the present application;

[0041] Figure 4 A fourth structural schematic diagram of an OLED strong microcavity anode structure provided in an embodiment of the present application;

[0042] Figure 5 A fifth structural schematic diagram of an OLED strong microcavity anode structure provided in an embodiment of the present application;

[0043] Figure 6-1 A schematic diagram of preparing metal electrodes of different heights on a substrate provided in one embodiment of the present application;

[0044] Figure 6-2 An embodiment of the present application provides Figure 6-1 Schematic diagram of the structure after preparing a transparent conductive layer;

[0045] Figure 6-3 For an embodiment of the present application, Figure 6-2 Schematic diagram of the transparent conductive layer after being subjected to exposure, development and etching treatment;

[0046] Figure 7-1 An embodiment of the present application provides Figure 6-1 Schematic diagram of the structure after deposition of a high-transmittance dielectric material;

[0047] Figure 7-2 For an embodiment of the present application, Figure 7-1 Schematic diagram of the high transmittance thin film layer after planarization treatment;

[0048] Figure 7-3 A schematic diagram of etching a through opening on a high-transmittance thin film layer according to an embodiment of the present application;

[0049] Figure 7-4 An embodiment of the present application provides Figure 7-3 Schematic diagram of the structure after a transparent conductive layer is deposited on it;

[0050] Figure 7-5 For an embodiment of the present application, Figure 7-4 Schematic diagram of the transparent conductive layer after being subjected to exposure, development and etching treatment;

[0051] Figure 7-6 An embodiment of the present application provides Figure 7-5 A schematic diagram of the structure after dielectric material is deposited on it;

[0052] Figure 7-7 Based on an embodiment of the present application Figure 5 A schematic diagram of the structure of a display panel obtained by the structure shown;

[0053] The markings in the accompanying drawings are: 100-substrate, 200-metal electrode, 300-high transmittance thin film layer, 400-transparent conductive layer, 500-pixel definition layer, 600-OLED functional layer, 700-cathode layer, 800-thin film encapsulation layer, 301-through opening, 503-third area and 504-fourth area. DETAILED DESCRIPTION

[0054] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application.

[0055] In the description of the present application, it should be noted that the terms "upper", "lower", "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0056] refer to Figure 2-1The embodiment of the present application provides an OLED strong microcavity anode structure, comprising: a substrate 100, anodes arranged at intervals on the substrate, and a pixel definition layer 500 arranged between adjacent anodes. The anode comprises: a metal electrode 200 and a transparent conductive layer 400 located on the metal electrode, the metal electrodes 200 corresponding to sub-pixels of different colors have different heights, and the upper surfaces of the transparent conductive layers 400 on different metal electrodes 200 are at the same height.

[0057] A plurality of mutually spaced metal electrodes 200 are arranged on the substrate 100, and each metal electrode 200 corresponds to a sub-pixel to form a corresponding sub-pixel array. Each metal electrode 200 can be independently controlled so that the corresponding sub-pixel generates independently controlled light. The transparent conductive layers 400 located above different metal electrodes 200 are disconnected from each other to form intervals between the anodes, that is, the transparent conductive layers above each metal electrode 200 form an independent area. By filling the pixel definition layer 500 between adjacent anodes, the purpose of separating each anode and sub-pixel is achieved, forming a sub-pixel light-emitting area that does not interfere with each other. Since the upper surfaces of the transparent conductive layers 400 on all metal electrodes 200 are at the same height, Figure 2-1 The entire upper surface of the OLED strong microcavity anode structure is almost at the same height, achieving the flattening of the OLED strong microcavity anode structure.

[0058] refer to Figure 2-2 ,exist Figure 2-1 The OLED functional layer 600, cathode layer 700 and thin film encapsulation layer 800 are sequentially prepared on the OLED strong microcavity anode structure shown to obtain a display panel. The cavity length corresponding to each sub-pixel is the distance from the upper surface of the metal electrode 200 to the lower surface of the cathode layer 700. By configuring metal electrodes of different heights for sub-pixels of different colors and flattening the transparent conductive layer 400, sub-pixels of different colors can obtain different cavity lengths, realizing a strong microcavity resonance structure to match the wavelengths of RGB light of different colors, and improving the efficiency and light color of OLED devices. In addition, thanks to the flattening of the OLED strong microcavity anode structure, the risk of short circuit of the OLED functional layer 600, cathode layer 700 and thin film encapsulation layer 800 is reduced, and the yield rate of the display panel is improved.

[0059] refer to Figure 3-1 and Figure 3-2, an embodiment of the present application provides an OLED strong microcavity anode structure, comprising: a substrate 100, anodes arranged at intervals on the substrate, and a pixel definition layer 500 arranged between adjacent anodes. Among them, the anode includes: a metal electrode 200, a high-transmittance film layer 300 and a transparent conductive layer 400, and the high-transmittance film layer 300 is located between the metal electrode 200 and the transparent conductive layer 400. The metal electrodes 200 corresponding to sub-pixels of different colors have different heights, and the upper surfaces of the transparent conductive layers 400 on all metal electrodes 200 are at the same height, thereby achieving the flattening of the OLED strong microcavity anode structure. The high-transmittance film layer 300 is made of a high-transmittance dielectric material, which can improve the transmittance of light in the OLED strong microcavity anode structure, thereby improving the light extraction efficiency. However, since the high-transmittance film layer 300 is made of dielectric material and can play an insulating role, it is necessary to set a through opening 301 directly reaching the metal electrode on the high-transmittance film layer 300, and the transparent conductive layer 400 is filled in the through opening 301, so that the transparent conductive layer 400 is connected to the underlying metal electrode 200. Each anode is independent of each other, and each anode corresponds to a sub-pixel. The pixel definition layer 500 filled between adjacent anodes is used to separate each sub-pixel to form a sub-pixel light-emitting area that does not interfere with each other. Each anode can be independently controlled so that the corresponding sub-pixel generates an independently controlled amount of light.

[0060] The OLED strong microcavity anode structure shown in Figure 3 also has a flattened upper surface, which effectively improves the performance and light color of the OLED device while reducing the risk of short circuits in the functional layers of the device and improving the product yield. In addition, by adding a high-transmittance film layer between the metal electrode and the transparent conductive layer, the transmittance of light in the device can be increased, thereby improving the light extraction efficiency.

[0061] refer to Figure 4, the embodiment of the present application provides an OLED strong microcavity anode structure, comprising: a substrate 100, anodes arranged at intervals on the substrate, and a pixel definition layer 500 arranged between adjacent anodes. Among them, the anode comprises: a metal electrode 200, a high-transmittance film layer 300 and a transparent conductive layer 400, and the high-transmittance film layer 300 is located between the metal electrode 200 and the transparent conductive layer 400. The metal electrodes 200 corresponding to sub-pixels of different colors have different heights, the upper surfaces of the transparent conductive layers 400 on different metal electrodes 200 are all at the same height, and the upper surfaces of the high-transmittance film layers 300 on different metal electrodes 200 are all at the same height, which increases the thickness of the high-transmittance film layer 300. The high-transmittance film layer 300 is made of a high-transmittance dielectric material, which can improve the transmittance of light in the OLED strong microcavity anode structure, thereby improving the light extraction efficiency. However, since the high-transmittance film layer 300 is made of dielectric material and can play an insulating role, it is necessary to set a through opening 301 directly reaching the metal electrode on the high-transmittance film layer, and the transparent conductive layer 400 is filled in the through opening 301, so that the transparent conductive layer 400 is connected to the underlying metal electrode 200. Each anode is independent of each other, and each anode corresponds to a sub-pixel. The pixel definition layer 500 filled between adjacent anodes is used to separate each sub-pixel to form a sub-pixel light-emitting area that does not interfere with each other. Each anode can be independently controlled so that the corresponding sub-pixel generates an independently controlled amount of light.

[0062] Figure 4 The OLED strong microcavity anode structure shown in FIG. 3 has the advantages of the OLED strong microcavity anode structure shown in FIG. 3. In addition, compared with the structure of FIG. 3, Figure 4 The thickness of the high-transmittance thin film layer in the OLED strong microcavity anode structure shown is greater, so higher light extraction efficiency can be achieved.

[0063] refer to Figure 5The embodiment of the present application provides an OLED strong microcavity anode structure, including: a substrate 100, a metal electrode 200, a high-transmittance film layer 300, a transparent conductive layer 400 and a pixel definition layer 500. A plurality of mutually spaced metal electrodes 200 are arranged on the substrate 100, each metal electrode 200 corresponds to a sub-pixel, forming a corresponding sub-pixel array, and each metal electrode 200 can be independently controlled so that the corresponding sub-pixel generates an independently controlled amount of light. The high-transmittance film layer 300 covers the substrate 100 and the metal electrode 200, and the high-transmittance film layer 300 is made of a high-transmittance dielectric material. By adding the high-transmittance film layer 300 between the metal electrode 200 and the transparent conductive layer 400, the transmittance of light in the device can be improved, thereby improving the light extraction efficiency of the device. However, since the high-transmittance film layer 300 is made of dielectric material and can play an insulating role, it is necessary to set a through opening 301 directly reaching the metal electrode on the high-transmittance film layer 300, and fill the through opening 301 with a transparent conductive material (i.e., the transparent conductive layer 400) so that the metal electrode 200 below and the transparent conductive layer 400 above are connected. The transparent conductive layer 400 is located above the high-transmittance film layer 300, and the transparent conductive layers 400 located above different metal electrodes 200 are disconnected from each other, that is, the transparent conductive layers above each metal electrode 200 form an independent area, and the pixel definition layer 500 prepared at the disconnection of the transparent conductive layer is used to separate each sub-pixel, so as to form sub-pixel light-emitting areas that do not interfere with each other. The upper surfaces of the high-transmittance film layer 300 are all at the same height, so the upper surfaces of the transparent conductive layer 400 deposited on the high-transmittance film layer 300 are also at the same height. For this reason, Figure 5 The entire upper surface of the OLED strong microcavity anode structure is almost at the same height, achieving the flattening of the OLED strong microcavity anode structure.

[0064] Figure 5 The high transmittance film layer 300 can be divided into a first part and a second part, the first part is the part directly above the metal electrode, and the second part is the other parts except the first part. The metal electrode 200, the first part of the high transmittance film layer 300 and the transparent conductive layer 400 above the first part constitute the anode. Since the high transmittance film layer 300 is made of dielectric material and can play an insulating role, the second part of the high transmittance film layer 300 and the pixel definition layer 500 jointly play the role of isolating the anode.

[0065] Figure 5 The OLED strong microcavity anode structure shown also has a flattened upper surface, which can effectively improve the performance and light color of OLED devices, while reducing the risk of short circuits in each layer and improving product yield. Figure 5In the OLED strong microcavity anode structure shown, the thickness of the high-transmittance thin film layer is greater, which can achieve higher light extraction efficiency.

[0066] An embodiment of the present application also provides a display panel, comprising: the OLED strong microcavity anode structure in any embodiment of the present application, and an OLED functional layer, a cathode layer and a thin film encapsulation layer located above the OLED strong microcavity anode structure.

[0067] by Figure 2-2 For example, it is based on Figure 2-1 A display panel is obtained by the OLED strong microcavity anode structure shown, in which sub-pixels of different colors can obtain different cavity lengths, realizing a strong microcavity resonance structure, which helps to improve the efficiency and light color of the display panel. In addition, thanks to the flattening of the OLED strong microcavity anode structure, the risk of short circuit of the OLED functional layer, cathode layer and thin-film encapsulation layer is reduced, thereby improving the yield rate of the display panel.

[0068] Based on Figure 3 Figure 5 The display panel obtained by the OLED strong microcavity anode structure shown also has the advantages of high performance, high light color and high yield rate. In addition, the high transmittance of the high transmittance thin film layer can effectively improve the light output efficiency of the display panel.

[0069] The substrate 100 in any embodiment of the present application can be made of glass, plastic, polymer, silicon or any other desired material. In some possible implementations, the substrate 100 can be a substrate of a silicon-based substrate, specifically a bare silicon substrate, a silicon substrate containing a circuit, or a silicon substrate containing a CMOS circuit.

[0070] The metal electrode 200 in any embodiment of the present application can be a single-layer film formed of a metal material or a multi-layer composite film formed of at least two metal materials. The metal materials used to prepare the metal electrode include but are not limited to: Al, Ag, TiN, and Ti.

[0071] In any embodiment of the present application, the dielectric material used to prepare the high-transmittance thin film layer 300 is SiO. SiO has extremely high light transmittance and can effectively improve the light extraction efficiency of the device.

[0072] In any embodiment of the present application, the material for preparing the transparent conductive layer 400 may be a conductive metal oxide, including but not limited to: ITO (indium tin oxide), IZO (indium zinc oxide), and the like.

[0073] In any embodiment of the present application, the dielectric material for preparing the pixel definition layer 500 includes but is not limited to: SiO, SiO x 、SiN x 、SiO x N y, Al2O3, etc.

[0074] In any embodiment of the present application, the OLED functional layer 600 includes functional layers such as HIL (Hole Inject Layer), HTL (Hole Transport Layer), EBL (Electron-Blocking Layer), EML (Emitting Layer), HBL (hole blocking layer), ETL (electron transport layer), and EIL (electron injection layer). The OLED functional layer 600 can be a phosphorescent, fluorescent or highly fluorescent OLED material.

[0075] In any embodiment of the present application, the cathode layer 700 can be a single-layer film formed of a metal material or a multi-layer composite film formed of at least two metal materials. The metal materials used to prepare the cathode layer 700 include but are not limited to: Mg, Ag, Al, IZO, AZO, etc.

[0076] In any embodiment of the present application, the thin film encapsulation layer 800 may be a single-layer thin film formed of one material or a multi-layer composite thin film formed of at least two materials. The materials for preparing the thin film encapsulation layer 800 include but are not limited to: Al2O3, TiO2, SiO x 、SiN x 、SiO x N y wait.

[0077] In any embodiment of the present application, the thickness of the metal electrode 200, the high transmittance film layer 300 and the transparent conductive layer 400 corresponding to the sub-pixels of different colors are determined according to the color of the sub-pixels to ensure that the sub-pixels of different colors obtain the cavity length that compensates for their respective optical path differences, thereby matching the wavelengths of different colors. The specific values ​​involve the wavelength of light, the thickness of each functional layer, the thickness of the display panel, the sub-pixel size and other design parameters, which are not limited in the embodiments of the present application. For example, in some application scenarios, the thickness of the metal electrode corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel is 210nm, 140nm and 70nm respectively, the thickness of the high transmittance film layer corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel is 0, 70 and 140nm respectively, and the thickness of the transparent conductive layer 400 corresponding to each color sub-pixel is uniformly 10nm.

[0078] The present application also provides a method for preparing a strong microcavity anode structure of an OLED. The method is used to prepare Figure 2-1 The OLED strong microcavity anode structure shown, the method comprises steps S601 to S603:

[0079] S601, preparing metal electrodes that are spaced apart and have different heights on a substrate.

[0080] In step S401, a plurality of metal electrodes 200 are prepared on the substrate 100 and are spaced apart from each other and have different heights. Figure 6-1 The structure shown.

[0081] In specific implementation, the height of each metal electrode is determined according to the color of the sub-pixel corresponding to the metal electrode. The specific value involves design parameters such as the wavelength of light, the thickness of each functional layer, the thickness of the display panel, and the sub-pixel size, which are not limited in the embodiments of the present application.

[0082] S602 , depositing a transparent conductive material on the metal electrode, and performing a planarization process on the deposited layer formed by the transparent conductive material to obtain a transparent conductive layer.

[0083] In a specific implementation, a certain thickness of transparent conductive material can be first deposited on a substrate including a metal electrode; a deposited layer formed by the transparent conductive material is planarized by using a CMP (Chemical Mechanical Polishing) or a back etching process to obtain a Figure 6-2 The transparent conductive layer 400 shown; Figure 6-2 The transparent conductive layer 400 is divided into a first region and a second region. The first region corresponds to the region directly above the metal electrode 200, and the other regions except the first region are the second region. Figure 6-2 The second region in the structure shown in FIG. 1 is subjected to exposure, development and etching treatment to remove the transparent conductive layer in the second region, so that the transparent conductive layers located above different metal electrodes are disconnected from each other, and the structure shown in FIG. Figure 6-3 The structure shown. Among them, the back etching process mainly uses the photoresist coated on the dielectric layer to etch it, so as to achieve the purpose of flattening the dielectric layer. It should be noted that the deposition thickness of the transparent conductive material should be greater than the height of the highest metal electrode, so as to ensure that the upper surface of the transparent conductive layer obtained after the flattening process is a plane at the same height.

[0084] S603 , depositing a dielectric material, and performing exposure, development, and etching processes on the deposited layer formed by the dielectric material to obtain a pixel definition layer.

[0085] exist Figure 6-3 A dielectric material is deposited on the structure shown in FIG. 4 , and the dielectric material above the transparent conductive layer 400 is exposed, developed, and etched to remove the dielectric material above the transparent conductive layer 400 to obtain a dielectric material as shown in FIG. Figure 2-1 A pixel definition layer 500 is shown.

[0086] The present application also provides a method for preparing a strong microcavity anode structure of an OLED. The method is used to prepare Figure 5 The OLED strong microcavity anode structure shown in the figure comprises steps S701 to S708.

[0087] S701, preparing metal electrodes that are spaced apart and have different heights on a substrate.

[0088] Through step S701, Figure 6-1 In the structure shown, metal electrodes 200 of different heights are arranged on the substrate 100 at intervals.

[0089] In specific implementation, the height of each metal electrode is determined according to the color of the sub-pixel corresponding to the metal electrode. The specific value involves design parameters such as the wavelength of light, the thickness of each functional layer, the thickness of the display panel, and the sub-pixel size, which are not limited in the embodiments of the present application.

[0090] S702, depositing a high-transmittance dielectric material on a substrate including a metal electrode.

[0091] exist Figure 6-1 A certain thickness of high-transmittance dielectric material is deposited on the structure shown in FIG. Figure 7-1 The structure shown.

[0092] S703 , planarizing the deposited layer formed by the high-transmittance dielectric material to obtain a high-transmittance thin film layer.

[0093] right Figure 7-1 The high transmittance film layer 300 in the structure shown in FIG. 1 is planarized to obtain Figure 7-2 The structure shown.

[0094] During specific implementation, a CMP process device or an etch-back process may be used to planarize the deposited layer formed by the high-transmittance material.

[0095] It should be noted that the deposition thickness of the high-transmittance dielectric material should be greater than the height of the highest metal electrode, so as to ensure that the upper surface of the high-transmittance thin film layer obtained after the planarization treatment is located on a plane at the same height, that is, Figure 7-2 The structure shown.

[0096] S704 , performing exposure, development and etching processing on the high-transmittance thin film layer to form a through opening directly reaching the metal electrode on the high-transmittance thin film layer.

[0097] Through step S704 Figure 7-2 The specified position on the high transmittance film layer 300 in the structure shown in FIG. 1 is subjected to exposure, development and etching treatment to obtain the following Figure 7-3 The through opening 301 is shown reaching the metal electrode 200 .

[0098] It should be noted that in any embodiment of the present application, the position of the through opening can be any position in the area directly above the metal electrode, and the embodiment of the present application is not limited. There is at least one through opening on the high-transmittance thin film layer directly above each metal electrode. The embodiment of the present application does not limit the shape of the through opening, and its cross-sectional area can be circular, square, elliptical, etc. The smaller the through opening, the greater the proportion of the high-transmittance thin film layer in the anode, the higher the light transmittance, but the process difficulty will also increase accordingly. Therefore, the size of the through opening needs to be selected by weighing factors such as process difficulty, yield rate, and light transmittance, and the embodiment of the present application is not limited.

[0099] S705 , depositing a transparent conductive layer on the high-transmittance thin film layer.

[0100] exist Figure 7-3 A transparent conductive layer 400 is deposited on the structure shown in FIG. Figure 7-4 In the structure shown, a conductor material is deposited in the through opening 301, and forms a connected whole with the conductive material deposited on the upper surface of the high-transmittance thin film layer 300, so that the upper transparent conductive layer 400 is connected to the lower metal electrode 200. The deposition thickness of the transparent conductive layer can be determined according to design requirements, and is not limited in the embodiment of the present application.

[0101] In a specific implementation, if the upper surfaces of the transparent conductive layers above different metal electrodes are not at the same height, the transparent conductive layer may be planarized before preparing the pixel definition layer.

[0102] S706 , performing exposure, development and etching processing on the transparent conductive layer, so that the transparent conductive layers located above different metal electrodes are disconnected from each other.

[0103] refer to Figure 7-4 , the transparent conductive layer 400 is divided into a first region and a second region, the first region corresponds to the region directly above the metal electrode 200, and the other regions except the first region are the second region. Figure 7-4 The second region of the structure shown in FIG. 1 is subjected to exposure, development and etching treatment to remove the transparent conductive layer of the second region, thereby obtaining a structure as shown in FIG. Figure 7-5 The structure shown.

[0104] S707 , depositing a dielectric material on the transparent conductive layer after the exposure, development and etching processes.

[0105] exist Figure 7-5 A dielectric material is deposited on the structure shown to obtain Figure 7-6 The structure shown.

[0106] S708 , performing exposure, development and etching processing on the deposited layer formed by the dielectric material to obtain a pixel definition layer.

[0107] refer to Figure 7-6 , the pixel definition layer 500 is divided into a third area 503 and a fourth area 504. Figure 7-6 The third region 503 in the structure shown in FIG. 1 is subjected to exposure, development and etching treatment to remove the dielectric material in the third region 503 and retain the dielectric material in the fourth region 504 to obtain the structure shown in FIG. Figure 5 A pixel definition layer 500 is shown.

[0108] exist Figure 5 The OLED functional layer 600, the cathode layer 700 and the thin film encapsulation layer 800 are sequentially deposited on the OLED strong microcavity anode structure as shown in FIG. Figure 7-7 The display panel shown.

[0109] The present application also provides a method for preparing a strong microcavity anode structure of an OLED. The method is used to prepare Figure 3-1 or Figure 3-2 The OLED strong microcavity anode structure shown, the method comprises steps S801 to S806:

[0110] S801, prepare metal electrodes with different heights and arranged at intervals on a substrate, and obtain Figure 6-1 The structure shown.

[0111] The specific implementation of step S801 may refer to step S601.

[0112] S802, in Figure 6-1 A high-transmittance dielectric material is deposited on the metal electrode of the structure shown to obtain a high-transmittance thin film layer 300 .

[0113] In specific implementation, Figure 6-1 A certain thickness of high-transmittance dielectric material is deposited on the structure shown in FIG. 1 , and the high-transmittance dielectric material deposited on the region between the anodes is removed by an etching process to obtain Figure 3-1 Alternatively, the above etching process may not be performed, and the high-transmittance dielectric material deposited on the area between the anodes may be retained. This part of the dielectric material may be used as part of the pixel definition layer. For specific structure, refer to Figure 3-2 The high transmittance thin film layer 300 is a continuous thin film layer covering the metal electrode 200 and the substrate 100 .

[0114] S803, performing exposure, development and etching processing on the high transmittance thin film layer in the structure shown in FIG. 3 to obtain Figure 3-1 or Figure 3-2 A through opening 301 is shown.

[0115] S804, depositing a transparent conductive material on the high-transmittance thin film layer, and flattening the deposited layer formed by the transparent conductive material so that the upper surfaces of the deposited layer formed by the transparent conductive material are located at the same height, thereby obtaining a transparent conductive layer.

[0116] The transparent conductive material will be uniformly deposited on the high-transmittance thin film layer and between adjacent anodes, and the transparent conductive material will also be deposited in the through opening 301 , so that the transparent conductive layer 400 and the metal electrode 200 are conductive.

[0117] S805, performing exposure, development and etching processing on the transparent conductive layer so that the transparent conductive layers located above different metal electrodes are disconnected from each other, and the transparent conductive layers are obtained as follows: Figure 3-1 or Figure 3-2 The transparent conductive layer 400 is shown.

[0118] By performing exposure, development and etching treatment on the transparent conductive layer, the transparent conductive material deposited between adjacent anodes can be removed to form a plurality of mutually independent transparent conductive layers.

[0119] S806, depositing dielectric material, exposing, developing and etching the deposited layer formed by the dielectric material to obtain a pixel definition layer, and finally obtaining Figure 3-1 or Figure 3-2 The structure shown.

[0120] The specific implementation of step S806 may refer to step S603 .

[0121] The present application also provides a method for preparing a strong microcavity anode structure of an OLED. The method is used to prepare Figure 4 The OLED strong microcavity anode structure shown, the method comprises steps S901 to S906:

[0122] S901, prepare metal electrodes with different heights and arranged at intervals on a substrate, and obtain Figure 6-1 The structure shown.

[0123] The specific implementation of step S901 may refer to step S601 .

[0124] S902, in Figure 6-1 A high-transmittance dielectric material is deposited on the metal electrode of the structure shown in the figure to obtain Figure 7-1 The structure shown.

[0125] S903, yes Figure 7-1 The high transmittance thin film layer 300 in the structure shown in the figure is subjected to planarization treatment, exposure, development and etching treatment to obtain Figure 4 The high transmittance film layer 300 and the through opening 301 are shown.

[0126] S904, in Figure 4 A transparent conductive material is deposited on the high transmittance thin film layer 300, and the deposited transparent conductive material is exposed, developed and etched so that the transparent conductive layers located on different metal electrodes are disconnected from each other to obtain Figure 4 The transparent conductive layer 400 is shown.

[0127] The transparent conductive material will be uniformly deposited on the high-transmittance thin film layer and between adjacent anodes, and the transparent conductive material will also be deposited in the through opening 301, so that the transparent conductive layer 400 and the metal electrode 200 are connected. By exposing, developing and etching the transparent conductive layer, the transparent conductive layer deposited between adjacent anodes can be removed.

[0128] S905, depositing dielectric material, and performing exposure, development and etching treatment on the deposited layer formed by the dielectric material to obtain a pixel definition layer, Figure 4 The structure shown.

[0129] The specific implementation of step S905 may refer to step S604.

[0130] It should be noted that, in the absence of conflict, the above embodiments and features in the embodiments can be combined with each other; and, based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application. Although the embodiments of this application provide the method operation steps shown in the above embodiments or drawings, more or fewer operation steps may be included in the method based on routine or no creative work is required. In the steps that do not logically have a necessary causal relationship, the execution order of these steps is not limited to the execution order provided in the embodiments of this application.

[0131] The above embodiments are only used to introduce the technical solutions of the present application in detail, but the description of the above embodiments is only used to help understand the methods of the embodiments of the present application and should not be understood as limiting the embodiments of the present application. Any changes or substitutions that can be easily thought of by technicians in this technical field should be included in the protection scope of the embodiments of the present application.

Claims

1. An OLED strong microcavity anode structure, characterized in that: include: substrate; Anodes are arranged at intervals on the substrate, the anodes comprising: a metal electrode and a transparent conductive layer located on the metal electrode, the metal electrodes corresponding to sub-pixels of different colors have different heights, and the upper surfaces of the transparent conductive layers on the different metal electrodes are at the same height; as well as, A pixel definition layer is disposed between adjacent anodes.

2. The OLED strong microcavity anode structure according to claim 1, characterized in that: The OLED strong microcavity anode structure also includes: a high-transmittance thin film layer located between the metal electrode and the transparent conductive layer; the high-transmittance thin film layer is made of a high-transmittance dielectric material, and a through opening directly reaching the metal electrode is provided on the high-transmittance thin film layer, and the transparent conductive layer is also filled in the through opening, so that the transparent conductive layer is conductive to the metal electrode.

3. The OLED strong microcavity anode structure according to claim 1, characterized in that: The OLED strong microcavity anode structure also includes: a high-transmittance thin film layer covering the substrate and the metal electrode; the high-transmittance thin film layer is made of a high-transmittance dielectric material, the transparent conductive layer is located on the high-transmittance thin film layer, and the high-transmittance thin film layer is provided with a through opening directly reaching the metal electrode, and the transparent conductive layer is also filled in the through opening, so that the transparent conductive layer is conductive to the metal electrode.

4. The OLED strong microcavity anode structure according to claim 2 or 3, characterized in that: The upper surfaces of the high-transmittance film layers are all at the same height.

5. The OLED strong microcavity anode structure according to claim 2 or 3, characterized in that: The dielectric material is SiO.

6. A display panel, characterized in that: include: The OLED strong microcavity anode structure according to any one of claims 1 to 5; OLED functional layer, cathode layer and thin film encapsulation layer located above the OLED strong microcavity anode structure.

7. A method for preparing an OLED strong microcavity anode structure, characterized in that: The method is used to prepare the OLED strong microcavity anode structure according to claim 1, and the method comprises: Preparing metal electrodes that are spaced apart and have different heights on a substrate; Depositing a transparent conductive material on the metal electrode, and performing a planarization process on the deposited layer formed by the transparent conductive material to obtain a transparent conductive layer; A dielectric material is deposited, and a deposition layer formed by the dielectric material is exposed, developed, and etched to obtain a pixel definition layer for blocking adjacent anodes.

8. A method for preparing an OLED strong microcavity anode structure, characterized in that: The method is used to prepare the OLED strong microcavity anode structure according to claim 1, and the method comprises: Preparing metal electrodes that are spaced apart and have different heights on a substrate; Depositing a high-transmittance dielectric material on the substrate comprising the metal electrode to obtain a high-transmittance thin film layer; Performing exposure, development and etching treatment on the high-transmittance thin film layer to form a through opening on the high-transmittance thin film layer directly reaching the metal electrode; Depositing a transparent conductive material on the high-transmittance thin film layer, and performing a planarization process on the deposited layer formed by the transparent conductive material to obtain a transparent conductive layer; Performing exposure, development and etching treatment on the transparent conductive layer so that the transparent conductive layers located above different metal electrodes are disconnected from each other; A dielectric material is deposited, and a deposition layer formed by the dielectric material is exposed, developed, and etched to obtain a pixel definition layer for blocking adjacent anodes.

9. A method for preparing an OLED strong microcavity anode structure, characterized in that: The method is used to prepare the OLED strong microcavity anode structure according to claim 1, and the method comprises: Preparing metal electrodes that are spaced apart and have different heights on a substrate; Depositing a high-transmittance dielectric material on the substrate including the metal electrode, and performing a planarization process on the deposited layer formed by the high-transmittance dielectric material to obtain a high-transmittance thin film layer; Performing exposure, development and etching treatment on the high-transmittance thin film layer to form a through opening on the high-transmittance thin film layer directly reaching the metal electrode; Depositing a transparent conductive layer on the high-transmittance thin film layer; Performing exposure, development and etching treatment on the transparent conductive layer so that the transparent conductive layers located above different metal electrodes are disconnected from each other; A dielectric material is deposited, and a deposition layer formed by the dielectric material is exposed, developed, and etched to obtain a pixel definition layer for blocking adjacent anodes.

10. The method according to claim 9, characterized in that The planarizing process of the deposited layer formed by the high-transmittance dielectric material specifically includes: The deposition layer formed by the high-transmittance material is planarized using a chemical mechanical polishing (CMP) process.

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