Surface treatment equipment, solar cell and preparation method thereof, and electrical device

Abstract

The present invention relates to the technical field of solar cells, and in particular to a surface treatment device, a solar cell and a method for preparing the same, and an electrical device. The surface treatment device comprises a raw material chamber, a gas generating device, and a reaction chamber; the gas generating device is used to convert the raw material in the raw material chamber into a gas form, the raw material chamber is connected to the reaction chamber, a substrate is arranged in the reaction chamber, and the raw material in the raw material chamber reaches the substrate. The surface treatment device of the present application has a simple structure, and raw materials can be provided in the raw material chamber as needed according to the design purpose, and the surface of the substrate is treated.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a surface treatment device, a solar cell and a preparation method thereof, and an electrical device. Background Art

[0002] A solar cell is a device that directly converts light energy into electrical energy through the photoelectric effect or photochemical effect.

[0003] Currently, equipment for preparing solar cells includes, for example, a tube furnace. Due to the limitation of the equipment for preparing solar cells, it is necessary to develop a new type of equipment for preparing solar cells. Summary of the invention

[0004] The main object of the present invention is to provide a surface treatment device for improving the surface properties of a substrate.

[0005] To achieve the above object, the present invention provides a surface treatment device, comprising:

[0006] Raw material room;

[0007] A gas generating device, the gas generating device is used to convert the raw material in the raw material chamber into a gas form;

[0008] and a reaction chamber, wherein the raw material chamber is connected to the reaction chamber, the reaction chamber is used to place a substrate, and the raw material in the raw material chamber reaches the substrate.

[0009] The raw material chamber is used to place raw materials, which are used to process the substrate.

[0010] The substrate is a part to be processed, and the raw material is made to reach the substrate so that the surface of the substrate is processed.

[0011] A gas generating device is a device used to convert raw materials into gaseous form. For example, if the raw materials can be converted into gaseous form by heating, the gas generating device can be a heating device. That is, the gas generating device can be reasonably selected according to the conditions for converting the raw materials into gaseous form.

[0012] It is understandable that the surface of the substrate to be treated in the present application may be a structure with a certain thickness, that is, in addition to being treated on the outer surface of the substrate, the raw material may also penetrate into the interior of the substrate for treatment.

[0013] The surface treatment equipment of the present application has a simple structure and strong universality. Raw materials can be provided in the raw material chamber as needed according to the design purpose, and can be applied to the surface treatment of various substrates.

[0014] Optionally, the raw material chamber is used to accommodate raw materials, and the raw materials include solvents and / or solutes. The raw materials in the raw material chamber enter the reaction chamber in the form of gas.

[0015] The raw material chamber is used to contain raw materials, and the raw materials include solvents and / or solutes. For example, in one embodiment, the raw materials in the raw material chamber are used to act on the solar cell substrate to prepare the solar cell.

[0016] In one embodiment, the reaction chamber is used to place the solar cell substrate and is connected to the raw material chamber, so that the raw materials in the raw material chamber enter the reaction chamber in the form of gas and reach the solar cell substrate to prepare the solar cell.

[0017] The solar cell substrate refers to the basic structure used to constitute the solar cell, for example, it can be a substrate composed of a certain functional layer, or a substrate composed of a combination of several functional layers. For example, in one embodiment, taking the perovskite solar cell as an example, the solar cell substrate includes a lower electrode, and it is necessary to further set a charge transfer layer on the lower electrode. At this time, the raw material for generating the charge transfer layer can be placed in the raw material chamber, and it can reach the lower electrode in the form of gas to form the charge transfer layer on the lower electrode; in another embodiment, when the solar cell substrate includes a perovskite film, the perovskite film needs to be passivated. At this time, the raw material for passivating the perovskite film can be placed in the raw material chamber, and it can reach the perovskite film in the form of gas to passivate the perovskite film.

[0018] The surface treatment equipment of the present application has a simple structure and can provide raw materials in the raw material chamber as needed according to the design purpose to prepare solar cells.

[0019] It can be understood that, as needed, the raw material chamber may include a solvent, or a solute, or both a solvent and a solute. For example, in one embodiment, the solvent can be independently introduced into the reaction chamber in the form of a gas to reach the substrate (for example, a solar cell substrate). In another embodiment, the solute can be independently introduced into the reaction chamber in the form of a gas to reach the substrate (for example, a solar cell substrate). In one embodiment, the solvent and the solute can be simultaneously introduced into the reaction chamber in the form of a gas to reach the substrate (for example, a solar cell substrate).

[0020] Optionally, the raw material chamber comprises:

[0021] a solvent chamber, the solvent chamber being connected to the reaction chamber;

[0022] and a solute chamber, the solute chamber being in communication with the reaction chamber.

[0023] The solvent chamber is used to hold the solvent; the solute chamber is used to hold the solvent. In order to facilitate the holding of different raw materials, the solvent and the solute are set separately. In addition, in order to facilitate the vaporization of the solvent and the solute into gas, the solvent and the solute are set in different chambers, so that they can be vaporized at different temperatures.

[0024] Optionally, the raw material chamber further includes a mixing chamber, and the solvent chamber and the solute chamber are both connected to the mixing chamber and are connected to the raw material chamber through the mixing chamber.

[0025] The mixing chamber is used to mix the solvent and the solute. It is understood that when the solvent gas and the solute gas need to be introduced into the reaction chamber at the same time, if the two are introduced into the reaction chamber independently through pipelines, it is difficult for the two to be effectively mixed, and it is difficult for the two to reach the substrate (for example, the solar cell substrate) uniformly. In order to improve the uniform arrival of the solvent gas and the solute gas at the substrate (for example, the solar cell substrate), the raw material chamber also includes a mixing chamber, which is respectively connected to the solvent chamber and the solute chamber, so that the solute and the solvent are mixed in advance before entering the reaction chamber to obtain a mixed gas, and then the mixed gas is transported to the reaction chamber through a pipeline connected to the mixing chamber and the raw material chamber.

[0026] Optionally, a first flow valve is provided at the connection between the solvent chamber and the mixing chamber;

[0027] And / or, a second flow valve is provided at the connection point between the solute chamber and the mixing chamber.

[0028] In order to effectively control the opening and closing of the channel between the solvent chamber and the mixing chamber, and control the amount of solvent reaching the mixing chamber, a first flow valve is provided at the connection between the solvent chamber and the mixing chamber. The first flow valve can realize the opening and closing function, as well as the flow rate regulation function.

[0029] Similarly, in order to effectively control the opening and closing of the channel between the solute chamber and the mixing chamber, and to control the amount of solute reaching the mixing chamber, a second flow valve is provided at the connection between the solute chamber and the mixing chamber. The second flow valve can realize the opening and closing function, as well as the flow rate regulation function.

[0030] Optionally, the solvent chamber includes a solvent gas generating device for generating solvent gas;

[0031] And / or, the solute chamber includes a solute gas generating device for generating solute gas.

[0032] The solvent gas generating device is used to generate the solvent into a gas state, for example, by vaporizing the solvent by heating so that the solvent becomes a gas.

[0033] The solute gas generating device is used to generate the solute into a gaseous state, for example, by vaporizing the solute by heating so that the solute becomes a gas. It is understood that the heating method can be achieved by setting a heater, for example, by heating the solute by a heater so that it becomes a gas.

[0034] Optionally, the surface treatment equipment further comprises an inert gas generating device, wherein the inert gas generating device is used to generate a carrier gas, and is used to transport the solvent gas and / or the solute gas into the reaction chamber through the carrier gas.

[0035] An inert gas generating device is a device used to generate an inert gas. The inert gas includes but is not limited to nitrogen and argon.

[0036] In order to facilitate the solvent gas to enter the reaction chamber, the surface treatment equipment also includes an inert gas generating device, which is used to generate a carrier gas, and is used to transport the solvent gas generated by the solvent gas generating device into the reaction chamber through the carrier gas. At the same time, the carrier gas can also dilute the solvent gas to adjust the concentration atmosphere of the solvent gas entering the reaction chamber.

[0037] In order to facilitate the solute gas to enter the reaction chamber, the surface treatment equipment also includes an inert gas generating device, which is used to generate a carrier gas, and is used to transport the solute gas generated by the solute gas generating device into the reaction chamber through the carrier gas. At the same time, the carrier gas can also dilute the solute gas to adjust the concentration atmosphere of the solute gas entering the reaction chamber.

[0038] Optionally, the reaction chamber is provided with a heating device;

[0039] And / or, the reaction chamber is provided with a temperature sensor;

[0040] And / or, the reaction chamber is provided with an air pressure sensor;

[0041] And / or, the reaction chamber is provided with a gas extraction device for exhausting the gas in the reaction chamber;

[0042] And / or, the reaction chamber is provided with an exhaust gas treatment device for treating the gas discharged from the reaction chamber;

[0043] And / or, the reaction chamber is provided with an exhaust device and an exhaust gas treatment device, and the exhaust gas treatment device is arranged between the reaction chamber and the exhaust device.

[0044] It is understandable that a heating device can be provided in the reaction chamber as needed to control the reaction chamber at a certain temperature so that the raw gas reaches the substrate and the substrate is processed. For example, in one embodiment, the raw gas reaches the surface of the solar cell and the solar cell is prepared.

[0045] A temperature sensor may also be provided in the reaction chamber to effectively control the temperature of the reaction chamber and realize the preparation of solar cells.

[0046] A gas pressure sensor may also be provided in the reaction chamber to effectively control the pressure of the reaction chamber and realize the preparation of solar cells.

[0047] The reaction chamber may also be provided with an exhaust device to exhaust the gas in the reaction chamber. For example, in the initial stage of the reaction, the air in the reaction chamber may be exhausted by the exhaust device. For example, the exhaust device may be a vacuum pump. The reaction chamber may be evacuated before the reaction chamber is operated to reduce the influence of impurities in the air on the battery preparation. Solvent gas and solute gas may also be exhausted after the reaction chamber is operated.

[0048] A tail gas treatment device may also be provided in the reaction chamber to treat the gas discharged from the reaction chamber. For example, when the solvent or solute pollutes the environment, the tail gas treatment device may be used to purify the discharged gas.

[0049] A vacuum device and an exhaust gas treatment device may also be provided in the reaction chamber. The exhaust gas treatment device is provided between the reaction chamber and the vacuum device. That is, the gas in the reaction chamber passes through the exhaust gas treatment device before being extracted. The gas is first purified and then discharged from the reaction chamber to reduce the influence of the solvent and solute on the vacuum device. For example, when the solvent is an organic solvent, it will corrode the plastic parts of the vacuum device. For this reason, the gas is purified before passing through the vacuum device to extend the service life of the vacuum device.

[0050] Optionally, the reaction chamber is provided with a gas extraction device, and the gas extraction device is located at the lower side of the substrate;

[0051] And / or, an inlet of the raw material chamber for communicating with the reaction chamber is located on the upper side of the substrate.

[0052] It can be understood that during the operation of the exhaust device, the power generated by the exhaust port can cause the gas in the reaction chamber to flow. It can be understood that, considering that the raw gas will reach the substrate (for example, the solar cell substrate), for example, when the raw gas is consumed, a concentration gradient of the raw gas will be formed in the reaction chamber. In order to make the gas extracted by the exhaust device a low-concentration raw gas, the exhaust device is located on the lower side of the substrate, so that the raw gas entering the reaction chamber flows to the bottom of the substrate after passing through the substrate, and then is extracted out of the reaction chamber.

[0053] In order to facilitate the raw material gas to enter the reaction chamber and reach the substrate (for example, the solar cell substrate), the inlet of the raw material chamber connected to the reaction chamber is located on the upper side of the substrate, so that the raw material gas passing through the inlet of the raw material chamber connected to the reaction chamber can be input toward the surface of the substrate, so that the raw material gas can effectively reach the substrate.

[0054] Optionally, the solar cell substrate comprises a perovskite thin film.

[0055] Perovskite has a loose structure and is easily affected by moisture, causing phase changes and decomposition. In addition, defects inside the perovskite can also affect the photoelectric conversion efficiency of perovskite devices. Therefore, in the process of the gradual industrialization of perovskite, a universal device is needed to prepare high-quality perovskite films, so as to further improve the efficiency and stability of perovskite photovoltaic devices.

[0056] The solar cell substrate includes a perovskite film, which means that the perovskite film is arranged on the solar cell substrate. For example, the perovskite film can be prepared on the substrate by a liquid phase method or a gas phase method.

[0057] When the solar cell substrate includes a perovskite film, the solvent gas in the raw material chamber can be introduced into the reaction chamber, and the solvent gas can be used to optimize the perovskite crystals and improve the crystal quality of the perovskite. For example, the solvent can optimize the crystallization of the perovskite crystals, make the grains larger and reduce the grain boundaries, reduce the probability of carrier recombination at the grain boundary transmission, and improve the performance of the solar cell.

[0058] When the solar cell substrate includes a perovskite film, the solute gas in the raw material chamber can also be passed into the reaction chamber to passivate the perovskite film using the solute, thereby improving the performance of the solar cell.

[0059] Of course, the solvent gas and the solute gas may also be introduced into the reaction chamber at the same time, and the optimization of the perovskite crystals and the passivation of the grain boundaries, or the passivation of the surface of the perovskite film may be achieved through the effects of the solvent gas and the solute gas.

[0060] Optionally, the solvent includes at least one of DMF, DMSO, and NMP;

[0061] And / or, the solute includes a passivation material, and the passivation material includes at least one of ammonium salts, ionic liquids, and molecules.

[0062] The solvent in the raw material includes but is not limited to at least one of DMF, DMSO, and NMP.

[0063] The solute includes but is not limited to a passivation material. The solute includes a passivation material, and the passivation material includes but is not limited to at least one of ammonium salts, ionic liquids, and molecules.

[0064] Ammonium salt passivation materials, ionic compounds containing ammonium ions, such compounds are called ammonium salts.

[0065] Ionic liquid passivation materials refer to liquids composed entirely of ions.

[0066] Molecular passivation materials have Lewis base properties and are small molecules or polymers with functional groups that provide lone pair electrons.

[0067] Optionally, the volume of the reaction chamber is 100 cm 3 Up to 10m 3 , preferably, 100 cm 3 Up to 10dm 3 ;

[0068] And / or, the temperature in the reaction chamber ranges from 90° C. to 120° C.;

[0069] And / or, the raw material chamber is used to generate a gaseous solute at a temperature of 50° C. to 200° C.;

[0070] And / or, the pressure in the reaction chamber ranges from 0.8 atmospheres to 1.2 atmospheres;

[0071] And / or, the time range for the inflow and outflow of the raw material gas in the reaction chamber to maintain balance is 2 minutes to 10 minutes;

[0072] and / or, the mass ratio of the gas entering the reaction chamber to the gas discharged is 0.8 to 1.2;

[0073] and / or, the ratio of the mass of the solvent gas to the mass of the carrier gas in the reaction chamber is 1 / 1000 to 5 / 100;

[0074] And / or, the ratio of the mass of the solvent gas to the mass of the solute gas in the reaction chamber is 100:1 to 1000:1, preferably 500:1 to 1000:1; and / or, the solute includes a passivation material, the passivation material includes at least one of ammonium salts, ionic liquids, and molecules, the ammonium salts include at least one of phenylethylamine iodine, hexane ammonium iodide, and tetrabutylammonium, the ionic liquids include at least one of 1-ethyl-3-methylimidazolium bromide, 1-hexyl-3-methylimidazolium bistrifluoromethanesulfonyl imide, and 1-butyl-3-methylimidazolium tetrafluoroborate, and the molecules include at least one of ethylamine, 2-6-lutidine, and PMMA.

[0075] The surface treatment equipment of the present application can be used for the optimized crystallization and passivation of large-sized perovskite films, and the surface area range of the perovskite film is 1cm 2 Up to 1m 2 .

[0076] The volume of the reaction chamber is 100 cm 3 Up to 10m 3 , preferably, 100 cm 3 Up to 10dm 3 .

[0077] It is understood that in order to effectively achieve a surface area range of 1 cm 2 Up to 1m 2Optimized crystallization and passivation of perovskite films with a reaction chamber volume of 100 cm 3 Up to 10m 3 , preferably, 100 cm 3 Up to 10dm 3 .

[0078] The temperature in the reaction chamber ranges from 90°C to 120°C.

[0079] It is understandable that perovskite can achieve effective crystallization at a certain temperature. For example, 90℃-120℃ is the crystallization temperature of perovskite. This temperature range helps to optimize the crystallization of perovskite. At the same time, this temperature helps to balance the penetration and volatilization of gas phase solvents in the perovskite film, thereby regulating the crystallization rate and further improving the crystal optimization of perovskite.

[0080] The raw material chamber is used to generate a gas phase solute with a temperature of 50°C to 200°C.

[0081] It is understandable that a suitable temperature can be set according to the physical properties of the solute so that the solute is introduced into the reaction chamber in the form of gas. For example, the raw material chamber is used to generate a gaseous solute at a temperature of 50°C to 200°C.

[0082] The pressure in the reaction chamber ranges from 0.8 atmospheres to 1.2 atmospheres.

[0083] It can be understood that the pressure of the reaction chamber can be regulated by passing the raw gas into the reaction chamber and exhausting the gas from the reaction chamber by the exhaust device. At the same time, the process of continuously passing the raw gas into the reaction chamber and the exhaust device continuously exhausting the gas from the reaction chamber can also regulate the concentration of the solvent gas and the solute gas in the reaction chamber to maintain the concentration balance, regulate the progress of the reaction of the raw gas on the perovskite film, and improve the optimization and passivation of the perovskite crystal.

[0084] The pressure in the reaction chamber is set within the above range, which helps the solvent gas and the passivation material gas to uniformly contact the perovskite film, and helps to optimize crystallization and passivation.

[0085] The time range for the raw material gas inlet and outlet in the reaction chamber to maintain balance is 2 minutes to 10 minutes.

[0086] When the amount of raw gas entering the reaction chamber and the amount of gas discharged from the reaction chamber are kept within a certain range (for example, the mass ratio of the gas entering the reaction chamber to the gas discharged is 0.8 to 1.2), it can be considered that the reaction chamber is in a balanced state. During the optimized crystallization process, the solvent can be infiltrated into the perovskite film and volatilized from the perovskite film to maintain a balance, which is conducive to the optimized crystallization of the perovskite crystal; and the time is within the above range, which is conducive to the growth of perovskite crystals and the reduction of grain boundaries. During the passivation process, it is also conducive to the uniform growth of the passivation material on the crystal interface and / or the surface of the perovskite film, thereby improving the device performance.

[0087] The ratio of the mass of the solvent gas to the mass of the carrier gas in the reaction chamber is 1 / 1000 to 5 / 100.

[0088] It is understandable that solvents can dissolve perovskite films. The use of gaseous solvents can solve the problem of direct dissolution of perovskite films. In order to balance the perovskite crystals and optimize the crystallization process in a gaseous solvent environment, a carrier gas is used to dilute the gaseous solvent to control the amount of solvent gas introduced, thereby reducing the excessive concentration of solvent gas, quickly dissolving the perovskite film, and making it difficult to crystallize. The ratio of the solvent gas mass to the carrier gas mass in the reaction chamber is 1 / 1000 to 5 / 100.

[0089] The ratio of the mass of the solvent gas to the mass of the solute gas in the reaction chamber is 100:1 to 1000:1, preferably 500:1 to 1000:1.

[0090] The ratio of the mass of the solvent gas to the mass of the solute gas in the reaction chamber is within the above range, which can improve the crystallization of the perovskite crystals and the passivation of the passivation material at the grain boundary and / or the perovskite surface.

[0091] The solute includes a passivation material, which includes but is not limited to at least one of ammonium salts, ionic liquids, and molecules. Ammonium salts include but are not limited to at least one of phenylethylamine iodide, hexane ammonium iodide, and tetrabutylammonium. Ionic liquids include but are not limited to at least one of 1-ethyl-3-methylimidazolium bromide [EMIM]Br, 1-hexyl-3-methylimidazolium bistrifluoromethanesulfonyl imide ([HMI]TFSI), and 1-butyl-3-methylimidazolium tetrafluoroborate ([BMIM]BF4). Molecular materials include but are not limited to at least one of ethylamine, 2-6-lutidine, and PMMA.

[0092] The present application also provides a method for preparing a solar cell, comprising:

[0093] preparing a solar cell substrate;

[0094] The solar cell substrate is placed in a reaction chamber, and the raw materials in a raw material chamber are introduced into the reaction chamber in the form of gas, so that the raw material gas processes the solar cell substrate.

[0095] Optionally, in the step of placing the solar cell substrate in a reaction chamber and passing the raw materials in a raw material chamber into the reaction chamber in the form of gas so that the raw material gas processes the solar cell substrate, the following steps are also included:

[0096] The perovskite film is placed in a reaction chamber, and the solute and / or solvent in the raw material chamber is introduced into the reaction chamber in the form of gas, so that the raw material gas processes the perovskite film.

[0097] By processing the perovskite film through the above-mentioned equipment, the performance of the perovskite film can be improved, thereby improving the performance of the device.

[0098] Optionally, the solute includes a passivation material, the passivation material includes at least one of ammonium salts, ionic liquids, and molecules, the ammonium salts include at least one of phenylethylamine iodide, hexane ammonium iodide, and tetrabutylammonium, the ionic liquids include at least one of 1-ethyl-3-methylimidazolium bromide, 1-hexyl-3-methylimidazolium bistrifluoromethanesulfonyl imide, and 1-butyl-3-methylimidazolium tetrafluoroborate, and the molecules include at least one of ethylamine, 2-6-lutidine, and PMMA;

[0099] And / or, the solvent comprises at least one of DMF, DMSO, and NMP;

[0100] and / or, the mass ratio of the gas entering the reaction chamber to the gas discharged is 0.8 to 1.2;

[0101] and / or, the ratio of the mass of the solvent gas to the mass of the carrier gas in the reaction chamber is 1 / 1000 to 5 / 100;

[0102] And / or, the ratio of the mass of the solvent gas to the mass of the solute gas in the reaction chamber is 100:1 to 1000:1, preferably 500:1 to 1000:1.

[0103] When the solar cell substrate includes a perovskite film, the solvent gas in the raw material chamber can be introduced into the reaction chamber, and the solvent gas can be used to optimize the perovskite crystals and improve the crystal quality of the perovskite. The solute gas in the raw material chamber can also be introduced into the reaction chamber, and the solute can be used to passivate the perovskite film to improve the performance of the solar cell. The solvent gas and the solute gas can also be introduced into the reaction chamber at the same time, and the perovskite crystals can be optimized and the grain boundaries can be passivated through the action of the solvent gas and the solute gas, or the surface of the perovskite film can be passivated.

[0104] When the amount of raw gas entering the reaction chamber and the amount of gas discharged from the reaction chamber are kept within a certain range (for example, the mass ratio of the gas entering the reaction chamber to the gas discharged is 0.8 to 1.2), the solvent can be infiltrated into the perovskite film and volatilized from the perovskite film to maintain a balance, which is conducive to the optimized crystallization of the perovskite crystal; and the time is in the range of 2 minutes to 10 minutes, which is conducive to the growth of perovskite crystals and the reduction of grain boundaries. In the passivation process, it is also conducive to the uniform growth of the passivation material on the crystal interface and / or the surface of the perovskite film, improving the device performance.

[0105] The ratio of the solvent gas mass to the carrier gas mass in the reaction chamber is 1 / 1000 to 5 / 100. The carrier gas can be used to dilute the gas phase solvent to control the amount of solvent gas introduced, thereby alleviating the phenomenon that the solvent gas concentration is too high, the perovskite film is quickly dissolved, and it is difficult to crystallize.

[0106] The ratio of the mass of the solvent gas to the mass of the solute gas in the reaction chamber is within the above range, which can improve the crystallization of the perovskite crystals and the passivation of the passivation material at the grain boundary and / or the perovskite surface.

[0107] The present application also provides a solar cell, the solar cell comprising:

[0108] Alternatively, the solar cell is prepared by the method for preparing a solar cell as described above.

[0109] Optionally, the solar cell comprises a perovskite solar cell, the perovskite solar cell comprises a perovskite film, and the surface area of ​​the perovskite film ranges from 1 cm 2 Up to 1m 2 ;

[0110] And / or, the perovskite film includes perovskite crystals and / or a precursor substance for forming perovskite crystals;

[0111] And / or, a passivation layer is disposed on the surface of the perovskite film, and the thickness of the passivation layer is 0 nm to 15 nm, preferably, 10 nm to 15 nm.

[0112] The surface treatment equipment of the present application can be used for the optimized crystallization and passivation of large-sized perovskite films, and the surface area range of the perovskite film is 1cm 2 Up to 1m 2 .

[0113] By using the above-mentioned equipment to process the perovskite film with the passivation material, a passivation layer can be formed on the surface of the perovskite film. The thickness of the passivation layer is 0 nm to 15 nm, preferably 10 nm to 15 nm.

[0114] It can be understood that the above passivation layer thickness is preferred to achieve a better passivation effect without causing an increase in resistance.

[0115] It can be understood that the perovskite film is obtained by converting a precursor substance into a perovskite crystal. For example, in one embodiment, the perovskite film in the present application can be completely converted into a perovskite crystal before being placed in a reaction chamber. At this time, the perovskite film can be placed in a reaction chamber, and a solvent gas is introduced to optimize the perovskite crystals and further improve the crystallization quality. Alternatively, a solute gas can be introduced to passivate the perovskite interface, or solvent gas and solute gas can be introduced at the same time to passivate the grain boundary while optimizing the perovskite crystallization.

[0116] In another embodiment, before the perovskite film is placed in the reaction chamber, perovskite crystals have not yet been formed in the perovskite film, and the substances in the perovskite film still exist in the form of precursor substances. At this time, the perovskite film is used to crystallize into perovskite crystals under the reaction atmosphere of the reaction chamber. At this time, during the formation of perovskite crystals, the introduction of solute gas can passivate the grain boundaries, and the introduction of solvent gas can optimize the crystallization.

[0117] Or in another embodiment, the precursor material in the perovskite film is not completely converted into perovskite crystals, so that the perovskite film contains both perovskite crystals and precursor materials used to form perovskite crystals.

[0118] It can be understood that a method for preparing a perovskite film comprises the following specific steps: a one-step solution spin coating method (for example, a perovskite solution is prepared, PbI2, FAI, CsI, and MACl are dissolved in a mixed solvent of DMF / DMSO, and stirred at room temperature for 1 hour to obtain a perovskite solution, wherein the volume ratio of DMF and DMSO is 4:1, and the ratio of PbI2, FAI, CsI, and MACl to the mixed solvent of DMF and DMSO is 645.4 mg: 216.7 mg: 36.4 mg: 9.45 mg: 1 mL, and the perovskite solution is spin coated on the first electron transport layer at 4000 rpm for 60 s, and the anti-solvent chlorobenzene is added dropwise in the last 15 s, and then heated at 110°C on a constant temperature hot stage for 20 min.). The perovskite film prepared by this method has all the precursor substances used to convert into perovskite crystals converted into perovskite crystals.

[0119] It can also be understood that a method for preparing a perovskite film comprises the following steps: a two-step vapor phase method (for example, vapor-depositing PbI2 on the first electron transport layer at a speed of 0.1 nm / s by a vapor phase method, and then vapor-depositing CsI and FAI films on PbI2 at speeds of 0.02 nm / s and 0.2 nm / s, respectively). The perovskite film prepared by this method has a precursor substance used to be converted into perovskite crystals that is not completely converted into perovskite crystals.

[0120] It can also be understood that in the process of passivating the perovskite film, it is preferred to maintain a certain temperature in the reaction chamber, for example, 90°C to 120°C. Under the condition of heating the reaction chamber, intermolecular interactions are formed between the passivation material and the perovskite to achieve passivation, improve perovskite defects, and enhance interface stability.

[0121] It can also be understood that in the process of optimizing crystallization and passivation, the solvent gas and the solute gas are kept mixed before being introduced into the reaction chamber. The mixed introduction method can allow the solvent gas to react with the passivation material gas and the perovskite, improve the uniform dispersion of the gas, and make the optimized crystallization uniform and the passivation uniform. In addition, the passivation material gas will be brought into the perovskite through the solvent gas to achieve passivation at the grain boundary.

[0122] The surface treatment equipment of the present application has a stable and uniform atmosphere, which is suitable for both laboratories and large-scale application scenarios. With the equipment of the present application, the passivation effect is hierarchical, which can passivate both the perovskite grain boundary and the perovskite surface at the same time. The materials used are also diverse and can be selected according to the expected passivation effect. The crystallization process can be further optimized during passivation. The optimized crystallization or reaction atmosphere of the surface interface can improve the quality of the perovskite crystal and improve the device performance. The surface treatment equipment has a wide range of applications, more precise control of the atmosphere, and more uniform perovskite film optimization and passivation effects.

[0123] The present application also provides an electrical device, which includes the solar cell.

[0124] The surface treatment equipment of the present application includes a raw material chamber, a gas generating device and a reaction chamber, wherein the gas generating device is used to convert the raw material in the raw material chamber into a gas form, the raw material chamber is connected to the reaction chamber, the reaction chamber is used to set a substrate, and the raw material in the raw material chamber reaches the substrate. The surface treatment equipment of the present application has a simple structure, and raw materials can be provided in the raw material chamber as needed according to the design purpose to treat the surface of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0125] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0126] Figure 1 This is a schematic structural diagram of a surface treatment device according to an embodiment of the present application;

[0127] Figure 2 This is a structural schematic diagram of a working mode of a surface treatment device according to an embodiment of the present application;

[0128] Figure 3 This is a structural schematic diagram of another working mode of a surface treatment device according to an embodiment of the present application;

[0129] Figure 4 It is a structural schematic diagram of another working mode of the surface treatment equipment of an embodiment of the present application.

[0130] Description of Figure Numbers:

[0131] Label name Label name 1 Reaction Chamber 23 Mixing chamber 2 Raw material room 3 Temperature Sensor 21 Solvent Chamber 4 Air pressure sensor 211 First flow valve 5 Air extraction device 22 Solute chamber 6 Solar cell substrate 221 Second flow valve

[0132] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0133] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0134] Hereinafter, the embodiment of the surface treatment equipment of the present application is specifically disclosed in detail with appropriate reference to the accompanying drawings. However, there may be cases where unnecessary detailed descriptions are omitted. For example, there are cases where detailed descriptions of well-known matters and repeated descriptions of actually the same structure are omitted. This is to avoid the following description from becoming unnecessarily lengthy and to facilitate the understanding of those skilled in the art. In addition, the drawings and the following description are provided for those skilled in the art to fully understand the present application and are not intended to limit the subject matter described in the claims.

[0135] "Scope" disclosed in the present application is limited in the form of lower limit and upper limit, and a given range is limited by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundary of a special range. The scope limited in this way can be including end values ​​or not including end values, and can be arbitrarily combined, that is, any lower limit can be combined with any upper limit to form a scope. For example, if the scope of 60-120 and 80-110 is listed for a specific parameter, it is understood that the scope of 60-110 and 80-120 is also expected. In addition, if the minimum range values ​​1 and 2 are listed, and if the maximum range values ​​3, 4 and 5 are listed, the following scope can be all expected: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In the present application, unless otherwise specified, the numerical range "ab" represents the abbreviation of any real number combination between a and b, wherein a and b are real numbers. For example, the numerical range "0-5" means that all real numbers between "0-5" are listed in this document, and "0-5" is just an abbreviation of these numerical combinations. In addition, when a parameter is expressed as an integer ≥ 2, it is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0136] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0137] Unless otherwise specified, all technical features and optional technical features of this application can be combined with each other to form a new technical solution.

[0138] If there is no special explanation, all steps of the present application can be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), which means that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), which means that step (c) may be added to the method in any order. For example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0139] A solar cell is a device that directly converts light energy into electrical energy through the photoelectric effect or photochemical effect.

[0140] Currently, equipment for preparing solar cells includes, for example, a tube furnace. Due to the limitation of the equipment for preparing solar cells, it is necessary to develop a new type of equipment for preparing solar cells.

[0141] The main purpose of this application is to provide a surface treatment device, which is intended to improve the surface properties of a substrate.

[0142] To achieve the above-mentioned purpose, the present invention proposes a surface treatment equipment, including a raw material chamber, a gas generating device and a reaction chamber. The gas generating device is used to convert the raw material in the raw material chamber into a gas form. The raw material chamber is connected to the reaction chamber. The reaction chamber is used to set a substrate, and the raw material in the raw material chamber reaches the substrate.

[0143] The raw material chamber is used to place raw materials, which are used to process the substrate.

[0144] The substrate is a part to be processed, and the raw material is made to reach the substrate so that the surface of the substrate is processed.

[0145] A gas generating device is a device used to convert raw materials into gaseous form. For example, if the raw materials can be converted into gaseous form by heating, the gas generating device can be a heating device. That is, the gas generating device can be reasonably selected according to the conditions for converting the raw materials into gaseous form.

[0146] It is understandable that the surface of the substrate to be treated in the present application may be a structure with a certain thickness, that is, in addition to being treated on the outer surface of the substrate, the raw material may also penetrate into the interior of the substrate for treatment.

[0147] The surface treatment equipment of the present application has a simple structure and strong universality. Raw materials can be provided in the raw material chamber as needed according to the design purpose, and can be applied to the surface treatment of various substrates.

[0148] In one embodiment, the raw material chamber is used to contain raw materials, the raw materials include solvents and / or solutes, and the raw materials in the raw material chamber enter the reaction chamber in the form of gas.

[0149] That is, in one embodiment, the surface treatment equipment includes a raw material chamber and a reaction chamber. The raw material chamber is used to accommodate raw materials, and the raw materials include solvents and / or solutes. The raw material chamber is connected to the reaction chamber. The reaction chamber is used to set a substrate (for example, including but not limited to a solar cell substrate). The raw materials in the raw material chamber enter the reaction chamber in the form of gas to reach the solar cell substrate.

[0150] The raw material chamber is used to contain raw materials, and the raw materials include solvents and / or solutes. That is, the raw materials in the raw material chamber are used to act on a substrate (for example, a solar cell substrate) to process the surface of the substrate.

[0151] The reaction chamber is used to place a substrate (for example, a solar cell substrate) and is connected to the raw material chamber so that the raw materials in the raw material chamber enter the reaction chamber in the form of gas and reach the solar cell substrate to prepare the solar cell.

[0152] The surface treatment equipment is described below using a solar cell substrate as a substrate. It is to be understood that the substrate in the present application includes but is not limited to a solar cell substrate.

[0153] The solar cell substrate refers to the basic structure used to constitute the solar cell, for example, it can be a substrate composed of a certain functional layer, or a substrate composed of a combination of several functional layers. For example, in one embodiment, taking the perovskite solar cell as an example, the solar cell substrate includes a lower electrode, and it is necessary to further set a charge transfer layer on the lower electrode. At this time, the raw material for generating the charge transfer layer can be placed in the raw material chamber, and it can reach the lower electrode in the form of gas to form the charge transfer layer on the lower electrode; in another embodiment, when the solar cell substrate includes a perovskite film, the perovskite film needs to be passivated. At this time, the raw material for passivating the perovskite film can be placed in the raw material chamber, and it can reach the perovskite film in the form of gas to passivate the perovskite film.

[0154] The surface treatment equipment of the present application has a simple structure and can provide raw materials in the raw material chamber as needed according to the design purpose to prepare solar cells.

[0155] It can be understood that, as needed, the raw material chamber may include a solvent, or a solute, or both a solvent and a solute. For example, in one embodiment, the solvent can be independently introduced into the reaction chamber in the form of a gas to reach the solar cell substrate. In another embodiment, the solute can be independently introduced into the reaction chamber in the form of a gas to reach the solar cell substrate. In one embodiment, the solvent and the solute can be simultaneously introduced into the reaction chamber in the form of a gas to reach the solar cell substrate.

[0156] In one embodiment, the raw material chamber includes a solvent chamber and a solute chamber, the solvent chamber is connected to the reaction chamber, and the solute chamber is connected to the reaction chamber.

[0157] The solvent chamber is used to hold the solvent; the solute chamber is used to hold the solvent. In order to facilitate the holding of different raw materials, the solvent and the solute are set separately. In addition, in order to facilitate the vaporization of the solvent and the solute into gas, the solvent and the solute are set in different chambers, so that they can be vaporized at different temperatures.

[0158] In one embodiment, the raw material chamber further includes a mixing chamber, and the solvent chamber and the solute chamber are both connected to the mixing chamber and are connected to the raw material chamber through the mixing chamber.

[0159] The mixing chamber is used to mix the solvent and the solute. It is understandable that when the solvent gas and the solute gas need to be introduced into the reaction chamber at the same time, if the two are introduced into the reaction chamber independently through pipes, it is difficult for the two to be effectively mixed, and it is difficult for the two to reach the solar cell substrate evenly. In order to improve the uniform arrival of the solvent gas and the solute gas at the solar cell substrate, the raw material chamber also includes a mixing chamber, which is respectively connected to the solvent chamber and the solute chamber, so that the solute and the solvent are mixed in advance before entering the reaction chamber to obtain a mixed gas, and then the mixed gas is transported to the reaction chamber through a pipe connecting the mixing chamber and the raw material chamber.

[0160] It is understood that, in one embodiment, when the solar cell substrate includes a perovskite film, during the process of optimizing crystallization and passivation of the perovskite film, the solvent gas and the solute gas are kept mixed and then introduced into the reaction chamber. The mixed introduction method can make the solvent gas carry the passivation material gas and the perovskite to react with each other, improve the uniform dispersion of the gas, and make the optimized crystallization uniform and the passivation uniform. In addition, the passivation material gas will be brought into the perovskite through the solvent gas to achieve passivation at the grain boundary.

[0161] In one embodiment, a first flow valve is provided at the connection point between the solvent chamber and the mixing chamber; and / or a second flow valve is provided at the connection point between the solute chamber and the mixing chamber.

[0162] In order to effectively control the opening and closing of the channel between the solvent chamber and the mixing chamber, and control the amount of solvent reaching the mixing chamber, a first flow valve is provided at the connection between the solvent chamber and the mixing chamber. The first flow valve can realize the opening and closing function, as well as the flow rate regulation function.

[0163] Similarly, in order to effectively control the opening and closing of the channel between the solute chamber and the mixing chamber, and to control the amount of solute reaching the mixing chamber, a second flow valve is provided at the connection between the solute chamber and the mixing chamber. The second flow valve can realize the opening and closing function, as well as the flow rate regulation function.

[0164] like Figure 1 As shown, the surface treatment equipment includes a reaction chamber 1, in which a solar cell substrate 6 is placed, a raw material chamber 2 includes a solvent chamber 21 and a solute chamber 22, and a mixing chamber 23 respectively connected to the solvent chamber 21 and the solute chamber 22, a first flow valve 211 is provided at the connecting pipe between the solvent chamber 21 and the mixing chamber 23, a second flow valve 221 is provided at the connecting pipe between the solute chamber 22 and the mixing chamber 23, and a temperature sensor 3 and an air pressure sensor 4, as well as an exhaust device 5 are also provided in the reaction chamber 1.

[0165] In one embodiment, the solvent chamber comprises a solvent gas generating device for generating solvent gas; and / or the solute chamber comprises a solute gas generating device for generating solute gas.

[0166] The solvent gas generating device is used to generate the solvent into a gas state, for example, by vaporizing the solvent by heating so that the solvent becomes a gas.

[0167] The solute gas generating device is used to generate the solute into a gaseous state, for example, by vaporizing the solute by heating so that the solute becomes a gas. It is understood that the heating method can be achieved by setting a heater, for example, by heating the solute by a heater so that it becomes a gas.

[0168] In one embodiment, the surface treatment equipment further comprises an inert gas generating device, wherein the inert gas generating device is used to generate a carrier gas, and is used to transport the solvent gas and / or the solute gas into the reaction chamber through the carrier gas.

[0169] An inert gas generating device is a device used to generate an inert gas. The inert gas includes but is not limited to nitrogen and argon.

[0170] In order to facilitate the solvent gas to enter the reaction chamber, the surface treatment equipment also includes an inert gas generating device, which is used to generate a carrier gas, and is used to transport the solvent gas generated by the solvent gas generating device into the reaction chamber through the carrier gas. At the same time, the carrier gas can also dilute the solvent gas to adjust the concentration atmosphere of the solvent gas entering the reaction chamber.

[0171] In order to facilitate the solute gas to enter the reaction chamber, the surface treatment equipment also includes an inert gas generating device, which is used to generate a carrier gas, and is used to transport the solute gas generated by the solute gas generating device into the reaction chamber through the carrier gas. At the same time, the carrier gas can also dilute the solute gas to adjust the concentration atmosphere of the solute gas entering the reaction chamber.

[0172] In one embodiment, the reaction chamber is provided with a heating device; and / or, the reaction chamber is provided with a temperature sensor; and / or, the reaction chamber is provided with an air pressure sensor; and / or, the reaction chamber is provided with a vacuum device for discharging the gas in the reaction chamber; and / or, the reaction chamber is provided with an exhaust gas treatment device for treating the gas discharged from the reaction chamber; and / or, the reaction chamber is provided with a vacuum device and an exhaust gas treatment device, and the exhaust gas treatment device is arranged between the reaction chamber and the vacuum device.

[0173] It is understandable that a heating device can be provided in the reaction chamber as needed to control the reaction chamber at a certain temperature so that the raw material gas reaches the surface of the solar cell to achieve the preparation of the solar cell. For example, when the solar cell substrate includes a perovskite film, during the passivation of the perovskite film, it is preferred to maintain a certain temperature in the reaction chamber, such as 90°C to 120°C. Under the condition of heating the reaction chamber, intermolecular interactions are formed between the passivation material and the perovskite to achieve passivation, improve perovskite defects, and improve interface stability. A temperature sensor can also be provided in the reaction chamber to effectively control the temperature of the reaction chamber to achieve the preparation of the solar cell.

[0174] A gas pressure sensor may also be provided in the reaction chamber to effectively control the pressure of the reaction chamber and realize the preparation of solar cells.

[0175] The reaction chamber may also be provided with an exhaust device to exhaust the gas in the reaction chamber. For example, in the initial stage of the reaction, the air in the reaction chamber may be exhausted by the exhaust device. For example, the exhaust device may be a vacuum pump. The reaction chamber may be evacuated before the reaction chamber is operated to reduce the influence of impurities in the air on the battery preparation. Solvent gas and solute gas may also be exhausted after the reaction chamber is operated.

[0176] A tail gas treatment device may also be provided in the reaction chamber to treat the gas discharged from the reaction chamber. For example, when the solvent or solute pollutes the environment, the tail gas treatment device may be used to purify the discharged gas.

[0177] A vacuum device and an exhaust gas treatment device may also be provided in the reaction chamber. The exhaust gas treatment device is provided between the reaction chamber and the vacuum device. That is, the gas in the reaction chamber passes through the exhaust gas treatment device before being extracted. The gas is first purified and then discharged from the reaction chamber to reduce the influence of the solvent and solute on the vacuum device. For example, when the solvent is an organic solvent, it will corrode the plastic parts of the vacuum device. For this reason, the gas is purified before passing through the vacuum device to extend the service life of the vacuum device.

[0178] In one embodiment, the reaction chamber is provided with an exhaust device, which is located at the lower side of the solar cell substrate; and / or, the inlet of the raw material chamber for connecting to the reaction chamber is located at the upper side of the solar cell substrate.

[0179] like Figures 1 to 4 As shown, the reaction chamber 1 is provided with an exhaust device 5, and the exhaust device 5 is located at the lower side of the solar cell substrate 6. The inlet of the raw material chamber 3 for connecting to the reaction chamber is located at the upper side of the solar cell substrate 6.

[0180] It is understandable that during the operation of the exhaust device, the power generated by the exhaust port can cause the gas in the reaction chamber to flow. It is understandable that, considering that the raw gas will reach the solar cell substrate, for example, when the raw gas is consumed, a concentration gradient of the raw gas will be formed in the reaction chamber. In order to make the gas extracted by the exhaust device a low-concentration raw gas, the exhaust device is located on the lower side of the solar cell substrate, so that the raw gas entering the reaction chamber flows to the bottom of the solar cell substrate after passing through the solar cell substrate, and then is extracted out of the reaction chamber.

[0181] In order to facilitate the raw material gas to enter the reaction chamber and reach the solar cell substrate, the inlet of the raw material chamber connected to the reaction chamber is located on the upper side of the solar cell substrate, so that the raw material gas passing through the inlet of the raw material chamber connected to the reaction chamber can be input toward the surface of the solar cell substrate, so that the raw material gas can effectively reach the solar cell substrate.

[0182] In one embodiment, a solar cell substrate includes a perovskite thin film.

[0183] Perovskite has a loose structure and is easily affected by moisture, causing phase changes and decomposition. In addition, defects inside the perovskite can also affect the photoelectric conversion efficiency of perovskite devices. Therefore, in the process of the gradual industrialization of perovskite, a universal device is needed to prepare high-quality perovskite films, so as to further improve the efficiency and stability of perovskite photovoltaic devices.

[0184] The solar cell substrate includes a perovskite film, which means that the perovskite film is arranged on the solar cell substrate. For example, the perovskite film can be prepared on the substrate by a liquid phase method or a gas phase method.

[0185] When the solar cell substrate includes a perovskite film, such as Figure 3 As shown, the solvent gas in the raw material chamber 2 can be introduced into the reaction chamber 1, and the solvent gas can be used to optimize the perovskite crystals and improve the crystal quality of the perovskite. For example, the solvent can optimize the crystallization of the perovskite crystals, make the grains larger and reduce the grain boundaries, reduce the probability of carrier recombination at the grain boundary transmission, and improve the performance of the solar cell.

[0186] When the solar cell substrate includes a perovskite film, such as Figure 4 As shown, the solute gas in the raw material chamber 2 can also be introduced into the reaction chamber, and the solute can be used to passivate the perovskite film to improve the performance of the solar cell.

[0187] Of course, if Figure 2 As shown, the solvent gas and the solute gas may also be introduced into the reaction chamber at the same time, and the optimization of the perovskite crystal and the passivation of the grain boundary, or the passivation of the surface of the perovskite film may be achieved through the action of the solvent gas and the solute gas.

[0188] In one embodiment, the solvent includes at least one of DMF, DMSO, and NMP; and / or the solute includes a passivating material; and / or the solute includes a passivating material, and the passivating material includes at least one of ammonium salts, ionic liquids, and small molecules.

[0189] The solvent in the raw material includes but is not limited to at least one of DMF, DMSO, and NMP.

[0190] Solutes include, but are not limited to, passivating materials.

[0191] The solute includes a passivation material, and the passivation material includes but is not limited to at least one of ammonium salts, ionic liquids, and molecules.

[0192] Ammonium salt passivation materials include ionic compounds composed of ammonium ions and acid ions. These compounds are called ammonium salts.

[0193] Ionic liquid passivation materials refer to liquids composed entirely of ions.

[0194] Molecular passivation materials have Lewis base properties and are small molecules or polymers with functional groups that provide lone pair electrons.

[0195] In one embodiment, the surface area of ​​the perovskite film ranges from 1 cm 2 Up to 1m 2 ; and / or, the volume of the reaction chamber is 100cm 3 Up to 10m 3 , preferably, 100 cm 3 Up to 10dm 3; and / or, the temperature range in the reaction chamber is 90°C to 120°C; and / or, the raw material chamber is used to produce a gaseous solute with a temperature of 50°C to 200°C; and / or, the pressure range in the reaction chamber is 0.8 atmospheres to 1.2 atmospheres; and / or, the time range for the inflow and outflow of the raw material gas in the reaction chamber to maintain equilibrium is 2min to 10min; and / or, the mass ratio of the gas entering the reaction chamber to the gas discharged is 0.8 to 1.2; and / or, the ratio of the mass of the solvent gas to the mass of the carrier gas in the reaction chamber is 1 / 1000 to 5 / 100; and / or, the ratio of the mass of the solvent gas to the mass of the solute gas in the reaction chamber is 100:1 to 1000:1, preferably 500:1 to 1000:1; and / or, the solute includes a passivating material, the passivating material includes at least one of ammonium salts, ionic liquids, and molecules, the ammonium salts include at least one of phenylethylamine iodide, hexane ammonium iodide, and tetrabutylammonium, the ionic liquids include at least one of 1-ethyl-3-methylimidazolium bromide [EMIM]Br, 1-hexyl-3-methylimidazolium bistrifluoromethanesulfonyl imide ([HMI]TFSI), and 1-butyl-3-methylimidazolium tetrafluoroborate ([BMIM]BF4), and the molecules include at least one of ethylamine, 2-6-lutidine, and PMMA.

[0196] The surface treatment equipment of the present application can be used for the optimized crystallization and passivation of large-sized perovskite films, and the surface area of ​​the perovskite film ranges from 1 cm 2 Up to 1m 2 .

[0197] Above 1cm 2 Up to 1m 2 In the example, the value includes the minimum and maximum values ​​of the range, and each value between the minimum and maximum values, and specific examples include but are not limited to the point value in the embodiment and 1cm 2 , 2cm 2 , 5cm 2 、10cm 2 , 50cm 2 、100cm 2 , 500cm 2 , 1000cm 2 、5000cm 2 , 1m 2 , 1m 2 Etc., and the range value between any two of the above point values.

[0198] The volume of the reaction chamber is 100 cm 3 Up to 10m 3 , preferably, 100 cm 3 Up to 10dm 3 .

[0199] It is understood that in order to effectively achieve a surface area range of 1 cm 2 Up to 1m 2 Optimized crystallization and passivation of perovskite films with a reaction chamber volume of 100 cm 3 Up to 10m 3 , preferably, 100 cm 3 Up to 10dm 3 .

[0200] Above 100cm 3 Up to 10m 3 In the range, the value includes the minimum and maximum values ​​of the range, and each value between the minimum and maximum values, and specific examples include but are not limited to the point value in the embodiment and 100cm 3 、110cm 3 、150cm 3 、180cm 3 , 200cm 3 , 500cm 3 , 1dm 3 、3dm 3 、5dm 3 、10dm 3 、50dm 3 、100dm 3 、500dm 3 , 1m 3 、10m 3 Etc., and the range value between any two of the above point values.

[0201] The temperature in the reaction chamber ranges from 90°C to 120°C.

[0202] It is understandable that perovskite can achieve effective crystallization at a certain temperature. For example, 90℃-120℃ is the crystallization temperature of perovskite. This temperature range helps to optimize the crystallization of perovskite. At the same time, this temperature helps to balance the penetration and volatilization of gas phase solvents in the perovskite film, thereby regulating the crystallization rate and further improving the crystal optimization of perovskite.

[0203] In the above-mentioned 90℃ to 120℃, the values ​​include the minimum and maximum values ​​of the range, and every value between the minimum and maximum values. Specific examples include but are not limited to the point values ​​in the embodiments and 90℃, 100℃, 110℃, 120℃, etc., as well as the range values ​​between any two of the above-mentioned point values.

[0204] The raw material chamber is used to generate a gas phase solute with a temperature of 50°C to 200°C.

[0205] It is understandable that a suitable temperature can be set according to the physical properties of the solute so that the solute is introduced into the reaction chamber in the form of gas. For example, the raw material chamber is used to generate a gaseous solute at a temperature of 50°C to 200°C.

[0206] In the above-mentioned 50℃ to 200℃, the values ​​include the minimum and maximum values ​​of the range, and every value between the minimum and maximum values. Specific examples include but are not limited to the point values ​​in the embodiments and 50℃, 60℃, 70℃, 80℃, 90℃, 100℃, 110℃, 120℃, 150℃, 180℃, 200℃, etc., and the range values ​​between any two of the above-mentioned point values.

[0207] The pressure in the reaction chamber ranges from 0.8 atmospheres to 1.2 atmospheres.

[0208] It can be understood that the pressure of the reaction chamber can be regulated by passing the raw gas into the reaction chamber and exhausting the gas from the reaction chamber by the exhaust device. At the same time, the process of continuously passing the raw gas into the reaction chamber and the exhaust device continuously exhausting the gas from the reaction chamber can also regulate the concentration of the solvent gas and the solute gas in the reaction chamber to maintain the concentration balance, regulate the progress of the reaction of the raw gas on the perovskite film, and improve the optimization and passivation of the perovskite crystal.

[0209] The pressure in the reaction chamber is set within the above range, which helps the solvent gas and the passivation material gas to uniformly contact the perovskite film, and helps to optimize crystallization and passivation.

[0210] In the above-mentioned range of 0.8 atmospheres to 1.2 atmospheres, the values ​​include the minimum and maximum values ​​of the range, and every value between the minimum and maximum values. Specific examples include but are not limited to the point values ​​in the embodiments and 0.8 atmospheres, 0.9 atmospheres, 1 atmosphere, 1.1 atmospheres, 1.2 atmospheres, etc., as well as the range values ​​between any two of the above-mentioned point values.

[0211] The time range for the raw material gas inlet and outlet in the reaction chamber to maintain balance is 2 minutes to 10 minutes.

[0212] When the amount of raw gas entering the reaction chamber and the amount of gas discharged from the reaction chamber are kept within a certain range (for example, the mass ratio of the gas entering the reaction chamber to the gas discharged is 0.8 to 1.2), it can be considered that the reaction chamber is in a balanced state. During the optimized crystallization process, the solvent can be infiltrated into the perovskite film and volatilized from the perovskite film to maintain a balance, which is conducive to the optimized crystallization of the perovskite crystal; and the time is within the above range, which is conducive to the growth of perovskite crystals and the reduction of grain boundaries. During the passivation process, it is also conducive to the uniform growth of the passivation material on the crystal interface and / or the surface of the perovskite film, thereby improving the device performance.

[0213] In the above 2min to 10min, the values ​​include the minimum and maximum values ​​of the range, and every value between the minimum and maximum values. Specific examples include but are not limited to the point values ​​in the embodiments and 2min, 3min, 4min, 5min, 6min, 7min, 8min, 9min, 10min, etc., and the range values ​​between any two of the above point values.

[0214] The ratio of the mass of the solvent gas to the mass of the carrier gas in the reaction chamber is 1 / 1000 to 5 / 100.

[0215] It is understandable that solvents can dissolve perovskite films. The use of gaseous solvents can solve the problem of direct dissolution of perovskite films. In order to balance the recrystallization process of perovskite crystals in a gaseous solvent environment, a carrier gas is used to dilute the gaseous solvent to control the amount of solvent gas introduced, thereby reducing the excessive concentration of solvent gas, rapidly dissolving the perovskite film, and making it difficult to crystallize. The ratio of the solvent gas mass to the carrier gas mass in the reaction chamber is 1 / 1000 to 5 / 100.

[0216] In the above 1 / 1000 to 5 / 100, the values ​​include the minimum and maximum values ​​of the range, and every value between such minimum and maximum values. Specific examples include but are not limited to the point values ​​in the embodiments and 1 / 1000, 1 / 100, 2 / 100, 3 / 100, 4 / 100, 5 / 100, etc., as well as the range values ​​between any two of the above point values.

[0217] The ratio of the mass of the solvent gas to the mass of the solute gas in the reaction chamber is 100:1 to 1000:1, preferably 500:1 to 1000:1.

[0218] The ratio of the mass of the solvent gas to the mass of the solute gas in the reaction chamber is within the above range, which can improve the crystallization of the perovskite crystals and the passivation of the passivation material at the grain boundary and / or the perovskite surface.

[0219] In the above 100:1 to 1000:1, the values ​​include the minimum and maximum values ​​of the range, and every value between the minimum and maximum values. Specific examples include but are not limited to the point values ​​in the embodiments and 100:1, 110:1, 150:1, 180:1, 200:1, 300:1, 400:1, 500:1, 600:1, 700:1, 800:1, 900:1, 1000:1, etc., as well as the range values ​​between any two of the above point values.

[0220] The solute includes a passivation material, which includes but is not limited to at least one of ammonium salts, ionic liquids, and molecules. Ammonium salts include but are not limited to at least one of phenylethylamine iodide, hexane ammonium iodide, and tetrabutylammonium. Ionic liquids include but are not limited to at least one of 1-ethyl-3-methylimidazolium bromide [EMIM]Br, 1-hexyl-3-methylimidazolium bistrifluoromethanesulfonyl imide ([HMI]TFSI), and 1-butyl-3-methylimidazolium tetrafluoroborate ([BMIM]BF4). Molecular materials include but are not limited to at least one of ethylamine, 2-6-lutidine, and PMMA.

[0221] In one embodiment, the perovskite film includes perovskite crystals and / or precursor substances for forming perovskite crystals.

[0222] It can be understood that the perovskite film is obtained by converting a precursor substance into a perovskite crystal. For example, in one embodiment, the perovskite film in the present application can be completely converted into a perovskite crystal before being placed in a reaction chamber. At this time, the perovskite film can be placed in a reaction chamber, and a solvent gas is introduced to optimize the perovskite crystals and further improve the crystallization quality. Alternatively, a solute gas can be introduced to passivate the perovskite interface, or solvent gas and solute gas can be introduced at the same time to passivate the grain boundary while optimizing the perovskite crystallization.

[0223] In another embodiment, before the perovskite film is placed in the reaction chamber, perovskite crystals have not yet been formed in the perovskite film, and the substances in the perovskite film still exist in the form of precursor substances. At this time, the perovskite film is used to crystallize into perovskite crystals under the reaction atmosphere of the reaction chamber. At this time, during the formation of perovskite crystals, the introduction of solute gas can passivate the grain boundaries, and the introduction of solvent gas can optimize the crystallization.

[0224] Or in another embodiment, the precursor material in the perovskite film is not completely converted into perovskite crystals, so that the perovskite film contains both perovskite crystals and precursor materials used to form perovskite crystals.

[0225] It can be understood that a method for preparing a perovskite film comprises the following specific steps: a one-step solution method (for example, a perovskite solution is prepared, PbI2, FAI, CsI, and MACl are dissolved in a mixed solvent of DMF / DMSO, and stirred at room temperature for 1 hour to obtain a perovskite solution, wherein the volume ratio of DMF to DMSO is 4:1, and the ratio of PbI2, FAI, CsI, and MACl to the mixed solvent of DMF and DMSO is 645.4 mg: 216.7 mg: 36.4 mg: 9.45 mg: 1 mL, and the perovskite solution is spin-coated on the first electron transport layer at 4000 rpm for 60 s, and the anti-solvent chlorobenzene is added dropwise in the last 15 s, and then heated at 110°C on a constant temperature hot stage for 20 min.). The perovskite film prepared by this method has all its precursor substances used to be converted into perovskite crystals converted into perovskite crystals.

[0226] It can also be understood that a method for preparing a perovskite film comprises the following steps: a two-step vapor phase method (for example, vapor-depositing PbI2 on the first electron transport layer at a speed of 0.1 nm / s by a vapor phase method, and then vapor-depositing CsI and FAI films on PbI2 at speeds of 0.02 nm / s and 0.2 nm / s, respectively). The perovskite film prepared by this method has a precursor substance used to be converted into perovskite crystals that is not completely converted into perovskite crystals.

[0227] It can also be understood that in the process of passivating the perovskite film, it is preferred to maintain a certain temperature in the reaction chamber, for example, 90°C to 120°C. Under the condition of heating the reaction chamber, intermolecular interactions are formed between the passivation material and the perovskite to achieve passivation, improve perovskite defects, and enhance interface stability.

[0228] It can also be understood that in the process of optimizing crystallization and passivation, the solvent gas and the solute gas are kept mixed before being introduced into the reaction chamber. The mixed introduction method can allow the solvent gas to react with the passivation material gas and the perovskite, improve the uniform dispersion of the gas, and make the optimized crystallization uniform and the passivation uniform. In addition, the passivation material gas will be brought into the perovskite through the solvent gas to achieve passivation at the grain boundary.

[0229] The surface treatment equipment of the present application has a stable and uniform atmosphere, which is suitable for both laboratories and large-scale application scenarios. With the equipment of the present application, the passivation effect is hierarchical, which can passivate both the perovskite grain boundary and the perovskite surface at the same time. The materials used are also diverse and can be selected according to the expected passivation effect. The crystallization process can be further optimized during passivation. The optimized crystallization or reaction atmosphere of the surface interface can improve the quality of the perovskite crystal and improve the device performance. The surface treatment equipment has a wide range of applications, more precise control of the atmosphere, and more uniform perovskite film optimization and passivation effects.

[0230] The present application also provides a method for preparing solar cells using the above-mentioned surface treatment equipment, including: preparing a solar cell substrate; placing the solar cell substrate in a reaction chamber, and passing the raw materials in the raw material chamber into the reaction chamber in the form of gas so that the raw material gas treats the solar cell substrate.

[0231] In one embodiment, the step of placing a solar cell substrate in a reaction chamber and passing the raw materials in the raw material chamber into the reaction chamber in the form of gas so that the raw material gas treats the solar cell substrate also includes the following steps: placing a perovskite film in the reaction chamber and passing the solute and / or solvent in the raw material chamber into the reaction chamber in the form of gas so that the raw material gas treats the perovskite film.

[0232] By processing the perovskite film through the above-mentioned equipment, the performance of the perovskite film can be improved, thereby improving the performance of the device.

[0233] In one embodiment, the solute includes a passivation material, the passivation material includes at least one of ammonium salts, ionic liquids, and molecules, the ammonium salts include at least one of phenylethylamine iodide, hexane ammonium iodide, and tetrabutylammonium, the ionic liquids include at least one of 1-ethyl-3-methylimidazolium bromide, 1-hexyl-3-methylimidazolium bistrifluoromethanesulfonyl imide, and 1-butyl-3-methylimidazolium tetrafluoroborate, and the molecules include at least one of ethylamine, 2-6-lutidine, and PMMA; and / or, the solvent includes at least one of DMF, DMSO, and NMP; and / or, the mass ratio of the gas entering the reaction chamber to the gas discharged is 0.8 to 1.2; and / or, the ratio of the mass of the solvent gas in the reaction chamber to the mass of the carrier gas is 1 / 1000 to 5 / 100; and / or, the ratio of the mass of the solvent gas in the reaction chamber to the mass of the solute gas is 100:1 to 1000:1, preferably 500:1 to 1000:1.

[0234] When the solar cell substrate includes a perovskite film, the solvent gas in the raw material chamber can be introduced into the reaction chamber, and the solvent gas can be used to optimize the perovskite crystals and improve the crystal quality of the perovskite. The solute gas in the raw material chamber can also be introduced into the reaction chamber, and the solute can be used to passivate the perovskite film to improve the performance of the solar cell. The solvent gas and the solute gas can also be introduced into the reaction chamber at the same time, and the perovskite crystals can be optimized and the grain boundaries can be passivated through the action of the solvent gas and the solute gas, or the surface of the perovskite film can be passivated.

[0235] When the amount of raw gas entering the reaction chamber and the amount of gas discharged from the reaction chamber are kept within a certain range (for example, the mass ratio of the gas entering the reaction chamber to the gas discharged is 0.8 to 1.2), the solvent can be infiltrated into the perovskite film and volatilized from the perovskite film to maintain a balance, which is conducive to the optimized crystallization of the perovskite crystal; and the time is in the range of 2 minutes to 10 minutes, which is conducive to the growth of perovskite crystals and the reduction of grain boundaries. In the passivation process, it is also conducive to the uniform growth of the passivation material on the crystal interface and / or the surface of the perovskite film, improving the device performance.

[0236] The ratio of the solvent gas mass to the carrier gas mass in the reaction chamber is 1 / 1000 to 5 / 100. The carrier gas can be used to dilute the gas phase solvent to control the amount of solvent gas introduced, thereby alleviating the phenomenon that the solvent gas concentration is too high, the perovskite film is quickly dissolved, and it is difficult to crystallize.

[0237] The ratio of the mass of the solvent gas to the mass of the solute gas in the reaction chamber is within the above range, which can improve the crystallization of the perovskite crystals and the passivation of the passivation material at the grain boundary and / or the perovskite surface.

[0238] In one embodiment, the solute in the raw material includes a passivation material, which is used to form a passivation layer on the surface of the perovskite film. The thickness of the passivation layer is 0 nm to 15 nm, preferably, 10 nm to 15 nm.

[0239] By using the above-mentioned equipment to process the perovskite film with the passivation material, a passivation layer can be formed on the surface of the perovskite film. The thickness of the passivation layer is 0 nm to 15 nm, preferably, 10 nm to 15 nm.

[0240] It can be understood that the above passivation layer thickness is preferred to achieve a better passivation effect without causing an increase in resistance.

[0241] In the above 0nm to 15nm, the values ​​include the minimum and maximum values ​​of the range, and every value between the minimum and maximum values. Specific examples include but are not limited to the point values ​​in the embodiments and 0nm, 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm, 15nm, etc., and the range values ​​between any two of the above point values.

[0242] The present application also provides a solar cell, wherein the solar cell is prepared by using the surface treatment device as described above; or, the solar cell is prepared by the method for preparing the solar cell as described above. The solar cell includes a perovskite solar cell, and the perovskite solar cell includes a perovskite film, and the surface area range of the perovskite film is 1 cm 2 Up to 1m 2; and / or, the perovskite film includes perovskite crystals and / or a precursor substance for forming perovskite crystals; and / or, a passivation layer is provided on the surface of the perovskite film, and the thickness of the passivation layer is 0nm to 15nm.

[0243] Example

[0244] Example 1

[0245] Use Figure 2 In the method, the solvent gas and the solute gas are mixed and introduced into the reaction chamber. The solvent gas is DMF, and the solute gas is PEAI. First, the reaction chamber is evacuated to exhaust the air therein, and the perovskite film is placed in the reaction chamber. The heater of the reaction chamber is turned on (the temperature of the reaction chamber is adjusted to 100°C by the temperature sensor), and the solvent gas (the mass ratio of the solvent gas to the inert gas is 1:200, and the solvent gas temperature is 150°C) and the passivation material gas (the passivation material gas temperature is 195°C) are introduced into the reaction chamber, so that the mixed gas of the two passes through the mixing chamber to the reaction chamber (the temperature of the reaction chamber is kept at 100°C, and the ratio of the mass of the solvent gas to the mass of the solute gas in the chamber is 1000:1). According to the pressure sensor, the exhaust device is turned on to maintain an approximately constant pressure state in the reaction chamber (adjust the pressure of the reaction chamber to 1 atmosphere), and the constant pressure state of the reaction chamber is maintained for 6 minutes, so that the solvent gas and the solute gas reach the perovskite film.

[0246] Preparation of perovskite film in Example 1:

[0247] 1) The surface of FTO conductive glass with a size of 2.0 cm×2.0 cm was cleaned twice with acetone and isopropanol in turn, immersed in deionized water for ultrasonic treatment for 10 min, and then dried in a forced air drying oven and placed in a glove box (N2 atmosphere) as the upper electrode.

[0248] 2) Preparation of the first charge (electron) transport layer: spin coating a 3 wt.% SnO2 nanocolloid solution on the FTO layer at 4000 rpm to 6500 rpm, and then heating it on a constant temperature hot stage at 150°C for 15 min, with a thickness of 50 nm.

[0249] 3) Preparation of perovskite layer:

[0250] The perovskite solution was prepared and spin-coated on the first electron transport layer at 4000rpm for 60s. The anti-solvent chlorobenzene was added in the last 15s, and then heated at 110°C for 20min on a constant temperature hot stage to a thickness of 600nm. The preparation steps of the perovskite solution are as follows: PbI2, FAI, CsI, and MACl were dissolved in a mixed solvent of DMF / DMSO, and stirred at room temperature for 1 hour to obtain a perovskite solution, wherein the volume ratio of DMF and DMSO was 4:1, and the ratio of PbI2, FAI, CsI, and MACl to the mixed solvent of DMF and DMSO was 645.4mg:216.7mg:36.4mg:9.45mg:1mL.

[0251] The perovskite film prepared in Example 1 is a solution that is completely converted into perovskite crystals.

[0252] Preparation of solar cells

[0253] The perovskite film after the above treatment was subsequently treated to prepare the second charge transport layer: a chlorobenzene solution of Spiro-OMeTAD with a concentration of 73 mg / mL was spin-coated on the perovskite layer at a speed of 3000 rpm to 4000 rpm to a thickness of 150 nm.

[0254] Preparation of Ag electrode (lower electrode): Place the above sample into a vacuum coating machine at 5×10 -4 A Ag electrode was evaporated on the surface of the hole transport layer obtained under a vacuum condition of 1.3 Pa, with an evaporation rate of 0.1 angstroms / s and a thickness of the Ag electrode of 80 nm.

[0255] Electric field polarization: at a temperature of 80°C to 150°C, an external electric field is applied to the prepared sample, the electric field strength E≤20kV / mm, and the direction of the electric field is perpendicular to the sample substrate plane and points from the electron transport layer to the hole transport layer.

[0256] Thus, the perovskite solar cell of Example 1 was obtained.

[0257] Example 2

[0258] On the basis of Example 1, with other conditions unchanged, an incompletely converted perovskite film is prepared (an incompletely converted perovskite film means that only part of the precursor material used to convert into perovskite crystals is converted into perovskite crystals, and part of it still exists in the form of precursor material).

[0259] Preparation of non-completely converted perovskite films:

[0260] PbI2 was evaporated on the first electron transport layer at a rate of 0.1 nm / s by a vapor phase method, and then CsI and FAI thin films were evaporated on PbI2 at rates of 0.02 nm / s and 0.2 nm / s, respectively.

[0261] Example 3

[0262] Based on Example 1, Figure 3 In this way, only the solvent gas is introduced into the reaction chamber.

[0263] Example 4

[0264] Based on Example 1, Figure 4 In this way, only the solute gas is introduced into the reaction chamber.

[0265] Example 5 and Example 6

[0266] Based on Example 1, the surface area of ​​the perovskite film is adjusted.

[0267] Example 7

[0268] On the basis of Example 1, the types of solute and solvent were adjusted.

[0269] Comparative Example 1

[0270] Based on Example 1, the perovskite film is not placed in the reaction chamber for treatment.

[0271] The performance of the perovskite solar cells of the embodiments and comparative examples was tested.

[0272] Specifically, the energy conversion efficiency of the perovskite battery of each embodiment and comparative example was measured. In the atmospheric environment, the sunlight simulation light source used the AM1.5G standard light source, and a four-channel digital source meter (Keithley 2440) was used to measure the volt-ampere characteristic curve of the battery under the irradiation of the light source to obtain the open circuit voltage Voc, short circuit current density Jsc, and fill factor FF (FillFactor) of the battery, thereby calculating the energy conversion efficiency Eff (Efficiency) of the battery.

[0273] The energy conversion efficiency is calculated as follows: Eff = Pout / Popt

[0274] =Voc×Jsc×(Vmpp×Jmpp) / (Voc×Jsc)

[0275] =Voc×Jsc×FF

[0276] Among them, Pout, Popt, Vmpp, and Jmpp are the battery operating output power, incident light power, battery maximum power point voltage, and maximum power point current, respectively.

[0277] The results are recorded in Table 1.

[0278] Table 1 Experimental data list

[0279]

[0280]

[0281] As can be seen from Table 1, by using the equipment of the present application, placing the perovskite film in the reaction chamber, and adjusting the raw materials in the raw material chamber, not only can the optimized crystallization of the perovskite crystals be achieved, but also the passivation of the perovskite film can be achieved. As shown in Example 1, by simultaneously introducing solvent gas and solute gas, not only the optimization of the perovskite crystals can be achieved, but also the passivation of the grain boundaries of the perovskite crystals and the passivation of the surface of the perovskite film can be achieved.

[0282] Example 8

[0283] Preparation of electron transport layer

[0284] The reaction chamber is evacuated to remove the air therein, and a glass having a surface covered with an indium tin oxide film is prepared and placed in the reaction chamber. The raw material chamber includes tin dioxide vapor (it can be understood that the tin dioxide vapor is prepared by an electron beam evaporation device). The tin dioxide vapor particles enter the reaction chamber through the raw material chamber and condense on the surface of the indium tin oxide glass substrate to form an electron transport layer of tin dioxide.

[0285] The above are only preferred embodiments of the present invention, and are not intended to limit the patent scope of the present invention. All equivalent structural changes made using the contents of the present invention's specification and drawings, or directly / indirectly applied in other related technical fields, are included in the patent protection scope of the present invention.

Claims

1. A surface treatment device, characterized in that: include: Raw material room; A gas generating device, the gas generating device is used to convert the raw material in the raw material chamber into a gas form; and a reaction chamber, wherein the raw material chamber is connected to the reaction chamber, the reaction chamber is used to place a substrate, and the raw material in the raw material chamber reaches the substrate.

2. The surface treatment device according to claim 1, characterized in that: The raw material chamber is used to contain raw materials, and the raw materials include solvents and / or solutes. The raw materials in the raw material chamber enter the reaction chamber in the form of gas.

3. The surface treatment equipment according to claim 1 or 2, characterized in that: The raw material chamber includes a solvent chamber and a solute chamber, and both the solvent chamber and the solute chamber are connected to the reaction chamber.

4. The surface treatment device according to claim 3, characterized in that: The raw material chamber further includes a mixing chamber, and the solvent chamber and the solute chamber are both in communication with the mixing chamber, and are in communication with the raw material chamber through the mixing chamber.

5. The surface treatment device according to claim 4, characterized in that: A first flow valve is provided at the connection point between the solvent chamber and the mixing chamber; And / or, a second flow valve is provided at the connection point between the solute chamber and the mixing chamber.

6. The surface treatment device according to any one of claims 3 to 5, characterized in that: The solvent chamber includes a solvent gas generating device for generating solvent gas; And / or, the solute chamber includes a solute gas generating device for generating solute gas.

7. The surface treatment device according to claim 6, characterized in that The surface treatment equipment further comprises an inert gas generating device, wherein the inert gas generating device is used to generate a carrier gas, and is used to transport the solvent gas and / or the solute gas into the reaction chamber through the carrier gas.

8. The surface treatment device according to any one of claims 1 to 7, characterized in that: The reaction chamber is provided with a heating device; And / or, the reaction chamber is provided with a temperature sensor; And / or, the reaction chamber is provided with an air pressure sensor; And / or, the reaction chamber is provided with a gas extraction device for exhausting the gas in the reaction chamber; And / or, the reaction chamber is provided with an exhaust gas treatment device for treating the gas discharged from the reaction chamber; And / or, the reaction chamber is provided with an exhaust device and an exhaust gas treatment device, and the exhaust gas treatment device is arranged between the reaction chamber and the exhaust device.

9. The surface treatment device according to any one of claims 1 to 8, characterized in that: The reaction chamber is provided with an exhaust device, and the exhaust device is located at the lower side of the substrate; And / or, an inlet of the raw material chamber for communicating with the reaction chamber is located on the upper side of the substrate.

10. The surface treatment device according to any one of claims 2 to 9, characterized in that: The volume of the reaction chamber is 100 cm 3 Up to 10m 3 , preferably, 100 cm 3 Up to 10dm 3 ; And / or, the temperature in the reaction chamber ranges from 90° C. to 120° C.; And / or, the raw material chamber is used to generate a gaseous solute at a temperature of 50° C. to 200° C.; And / or, the pressure in the reaction chamber ranges from 0.8 atmospheres to 1.2 atmospheres; And / or, the time range for maintaining the balance of the inflow and outflow of the raw material gas in the reaction chamber is 2 minutes to 10 minutes.

11. A method for preparing a solar cell, characterized in that: include: preparing a solar cell substrate; The solar cell substrate is placed in a reaction chamber, and the raw materials in a raw material chamber are introduced into the reaction chamber in the form of gas, so that the raw material gas processes the solar cell substrate.

12. The method for preparing a solar cell according to claim 11, characterized in that: The step of placing the solar cell substrate in a reaction chamber and passing the raw materials in a raw material chamber into the reaction chamber in the form of gas so that the raw material gas processes the solar cell substrate further includes the following steps: The perovskite film is placed in a reaction chamber, and the solute and / or solvent in the raw material chamber is introduced into the reaction chamber in the form of gas, so that the raw material gas processes the perovskite film.

13. The method for preparing a solar cell according to claim 12, characterized in that: The solute includes a passivation material, and the passivation material includes at least one of ammonium salts, ionic liquids, and molecules. The ammonium salts include at least one of phenylethylamine iodide, hexane ammonium iodide, and tetrabutylammonium. The ionic liquids include at least one of 1-ethyl-3-methylimidazolium bromide, 1-hexyl-3-methylimidazolium bistrifluoromethanesulfonyl imide, and 1-butyl-3-methylimidazolium tetrafluoroborate. The molecules include at least one of ethylamine, 2-6-lutidine, and PMMA. And / or, the solvent comprises at least one of DMF, DMSO, and NMP; and / or, the mass ratio of the gas entering the reaction chamber to the gas discharged is 0.8 to 1.2; and / or, the ratio of the mass of the solvent gas to the mass of the carrier gas in the reaction chamber is 1 / 1000 to 5 / 100; And / or, the ratio of the mass of the solvent gas to the mass of the solute gas in the reaction chamber is 100:1 to 1000:1, preferably 500:1 to 1000:

1.

14. A solar cell, characterized in that: The solar cell comprises a surface treatment device prepared by any one of claims 1 to 10; Alternatively, the solar cell is prepared by the method for preparing a solar cell according to any one of claims 11 to 13.

15. The solar cell according to claim 14, wherein: The solar cell comprises a perovskite solar cell, the perovskite solar cell comprises a perovskite film, and the surface area range of the perovskite film is 1 cm 2 Up to 1m 2 ; And / or, the perovskite film includes perovskite crystals and / or a precursor substance for forming perovskite crystals; And / or, a passivation layer is disposed on the surface of the perovskite film, and the thickness of the passivation layer is 0 nm to 15 nm, preferably, 10 nm to 15 nm.

16. An electrical device, characterized in that: The electrical device comprises the solar cell according to claim 14 or 15.

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