Radiation-tolerant metal-based piezoelectric film sensors and fasteners

Abstract

The present invention belongs to the technical field of thin film sensors, and in particular, relates to a radiation-resistant piezoelectric thin film sensor based on a metal substrate and a fastener, wherein the piezoelectric thin film sensor comprises a piezoelectric layer, a radiation protection layer and an electrode layer which are sequentially stacked on the top end surface of the metal substrate from the inside to the outside, and the radiation protection layer comprises a plurality of first film layers, and the plurality of first film layers are stacked layer by layer between the piezoelectric layer and the electrode layer. The piezoelectric thin film sensor of the present invention has good radiation resistance and high performance stability, and can achieve long life cycle service in a radiation environment.

Description

Technical Field

[0001] The present invention belongs to the technical field of thin film sensors, and in particular relates to a radiation-resistant piezoelectric thin film sensor based on a metal substrate and a fastener. Background Art

[0002] With the continuous upgrading of sensors, the demand for high-precision monitoring of fastener preload for the safety of key structural connections in special environments such as aerospace and nuclear power has increased dramatically. Through the pre-installed measurement sensors and wiring, ultrasonic non-destructive measurement technology can realize remote measurement and monitoring of the preload of key structural connections in harsh environments. Ultrasonic non-destructive measurement technology based on the principle of acoustic elasticity relies on piezoelectric film sensors to measure the sound path of ultrasonic waves in the natural state and tension state of fasteners respectively. Piezoelectric film sensors can realize the simultaneous transmission and reception of ultrasonic signals through piezoelectric effect and inverse piezoelectric effect. That is, the ultrasonic signal is emitted from the piezoelectric film sensor at the top of the fastener, transmitted along the screw to the bottom, and reflected from the bottom back to the top of the bolt and received by the piezoelectric film sensor. By calibrating the relationship between the sound path difference and the tension under different tension states, real-time measurement of the preload of fasteners of the same size can be achieved.

[0003] In the existing ultrasonic preload measurement technology, the piezoelectric ceramic wafer needs to use coupling agent glue, which leads to measurement errors in the test data due to the difference in glue thickness, insufficient measurement accuracy, and the environmental weather resistance of the glue will generally cause the service life of the sensor to be 1 to 2 years. Compared with the measurement of piezoelectric ceramic wafers, thin-filming the sensor and growing it in situ on the end face of the fastener can avoid the high discreteness and low service life caused by the coupling agent glue, and has higher detection accuracy.

[0004] However, high-energy rays in aerospace, nuclear power and other environments can cause radiation damage to piezoelectric film sensors, causing the performance of the sensors to decay or even fail during service. The key to accurately measuring the preload of fasteners is that piezoelectric film sensors and base fasteners can perform stably in high-radiation environments and that ultrasonic echo signals can be stably received. Therefore, providing a piezoelectric film sensor with good radiation resistance can achieve real-time monitoring and early warning of the safety of key structural connections throughout their life cycle.

[0005] In view of this, the present invention is proposed. Summary of the invention

[0006] The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art and provide a piezoelectric film sensor based on a metal substrate which has radiation resistance and can achieve a long life cycle in a radiation environment.

[0007] In order to solve the above technical problems, the first aspect of the present invention proposes a radiation-resistant piezoelectric film sensor based on a metal substrate, wherein the piezoelectric film sensor includes a piezoelectric layer, an anti-radiation layer and an electrode layer stacked in sequence from the inside to the outside on the top end surface of the metal substrate, and the anti-radiation layer includes a plurality of first film layers, and the plurality of first film layers are stacked layer by layer between the piezoelectric layer and the electrode layer.

[0008] Based on the first aspect of the present invention, further optionally, at least one first film layer among the plurality of first film layers covers the outer edge of the piezoelectric layer.

[0009] Based on the first aspect of the present invention, further optionally, the projection areas of the plurality of first film layers on the top end surface of the metal substrate are the same.

[0010] On the basis of the first aspect of the present invention, further optionally, at least two adjacent first film layers among the plurality of first film layers are made of different materials.

[0011] On the basis of the first aspect of the present invention, further optionally, the material of the radiation protection layer is a combination of one or more of Cr2O3, Al2O3, AlN, SiO2, Si3N4 and SiC.

[0012] Based on the first aspect of the present invention, further optionally, the thickness of the radiation protection layer is between 0.05 micrometers and 10 micrometers.

[0013] Based on the first aspect of the present invention, further optionally, the electrode layer includes an outer electrode and an inner electrode, the outer electrode is ring-shaped, the inner electrode is arranged in the inner ring of the outer electrode and is insulated from the outer electrode, and the edge of the outer electrode extends from top to bottom to the top end surface of the metal substrate and covers the outer edges of the anti-radiation layer and the piezoelectric layer.

[0014] On the basis of the first aspect of the present invention, further optionally, the electrode layer includes a plurality of second film layers, and the plurality of second film layers are stacked layer by layer on the radiation protection layer;

[0015] And / or, the piezoelectric layer includes a plurality of third membrane layers, and the plurality of third membrane layers are stacked layer by layer on the top end surface of the metal substrate.

[0016] On the basis of the first aspect of the present invention, further optionally, the material of the electrode layer is a combination of one or more of indium, tin, aluminum, titanium, molybdenum, nickel, copper, silver, gold, platinum, niobium and tungsten, and the thickness of the electrode layer is 0 to 50 microns, and is not 0;

[0017] And / or, the material of the piezoelectric layer is ZnO, AlN, CdS, ZnS, SiO2, Ta2O5, LiNbO3 and Pb(Zr x Ti 1-x )O3, the thickness of the piezoelectric layer is 0 to 30 microns and is not 0.

[0018] A second aspect of the present invention provides a fastener, comprising a fastener base and the radiation-resistant metal-based piezoelectric film sensor provided in the first aspect of the present invention, wherein the piezoelectric film sensor is disposed on the top end surface of the fastener base.

[0019] After adopting the above technical solution, the present invention has the following beneficial effects compared with the prior art:

[0020] The radiation-resistant piezoelectric film sensor based on a metal substrate of the present invention is provided with a radiation-proof layer between the piezoelectric layer and the electrode layer, and the radiation-proof layer includes a plurality of first film layers stacked and arranged, and a large number of defect states are formed between adjacent first film layers, so that the electron-hole pairs generated under the compound radiation condition can be compounded, on the one hand, the radiation resistance of the sensor is improved, and the influence of the radiation of the external environment on the performance of the piezoelectric layer is reduced, and on the other hand, the piezoelectric layer material is protected to achieve electrical insulation isolation. In addition, the piezoelectric film sensor of the present invention can withstand a relatively high radiation dose, and the piezoelectric film sensor can be implanted in an ordinary fastener in a high radiation environment such as aerospace and nuclear power, and the preload state of the key structural connection of the facility equipment can be remotely monitored in real time, and the loosening of the fastener can be warned to avoid the operator being in the radiation environment for a long time, thereby protecting personal safety.

[0021] The specific implementation modes of the present invention are further described in detail below in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The accompanying drawings are part of the present invention and are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention, but do not constitute an improper limitation of the present invention. Obviously, the drawings described below are only some embodiments. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. In the accompanying drawings:

[0023] Figure 1 An exploded diagram of a radiation-resistant piezoelectric film sensor based on a metal substrate according to an embodiment of the present invention.

[0024] Figure 2a-2h This is a comparison chart of the ultrasonic echo signals of the thin film sensor under different total radiation doses in Experimental Example 1.

[0025] Figure 3a-3hThis is a comparison chart of the ultrasonic echo signals of the thin film sensor under different total radiation doses in Experimental Example 2.

[0026] The reference numerals are as follows: 1, metal substrate; 2, piezoelectric layer; 3, radiation protection layer; 31, first film layer; 4, electrode layer; 41, inner electrode; 42, outer electrode.

[0027] It should be noted that these drawings and textual descriptions are not intended to limit the conceptual scope of the present invention in any way, but are intended to illustrate the concept of the present invention for those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0028] In the description of the present invention, it should be noted that the terms "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0029] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "contacted", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0030] This embodiment provides a radiation-resistant piezoelectric film sensor based on a metal substrate 1, such as Figure 1 As shown, the piezoelectric film sensor includes a piezoelectric layer 2, an anti-radiation layer 3 and an electrode layer 4 which are stacked on the top end surface of a metal substrate from the inside to the outside. The anti-radiation layer 3 includes a plurality of first film layers 31 which are stacked layer by layer between the piezoelectric layer 2 and the electrode layer 4.

[0031] Specifically, the piezoelectric layer 2, the anti-radiation layer 3 and the electrode layer 4 of this embodiment are grown layer by layer on the top end face of the metal substrate 1 by in-situ growth, which can avoid the test discrete error caused by the coupling agent. The in-situ growth method includes but is not limited to physical vapor deposition (PVD), chemical vapor deposition (CVD) or electroplating. Among them, the piezoelectric layer 2 is used to convert the external electrical signal into an acoustic signal, and then receive the echo signal and convert it into an electrical signal; the electrode layer 4 is used to receive the electrical signal and export the electrical signal to the outside; the radiation layer is used to reduce the influence of radiation in the external environment on the performance of the piezoelectric layer 2. The dimensions of the piezoelectric layer 2, the anti-radiation layer 3 and the electrode layer 4 are determined according to the specifications of the metal substrate 1, and are preferably located in the area where the stress deformation of the top end face of the metal substrate 1 is the smallest, so as to avoid the external stress causing the piezoelectric film sensor to peel off from the top end face of the metal substrate 1, thereby effectively improving the bonding force between the piezoelectric film sensor and the metal substrate 1.

[0032] The radiation protection layer 3 includes a plurality of first film layers 31 stacked in layers, and an obvious interface will appear between two adjacent first film layers 31. Due to the lattice mismatch, there will be a large number of defect states at the interface. These defect states can compound the electron-hole pairs generated under radiation conditions, thereby improving the radiation resistance of the piezoelectric film sensor and reducing the impact of external environment radiation on the performance of the piezoelectric material.

[0033] Furthermore, the material of the radiation protection layer 3 is a combination of one or more of chromium oxide Cr2O3, aluminum oxide Al2O3, aluminum nitride AlN, silicon oxide SiO2, silicon nitride Si3N4 and silicon carbide SiC. The radiation protection layer 3 of this embodiment adopts a material with stable physical and chemical properties, strong and high resistance, which can effectively protect the material of the piezoelectric layer 2 and realize electrical insulation isolation of the piezoelectric layer 2.

[0034] The materials of the multiple first film layers 31 of this embodiment can be the same or different. Preferably, the materials of at least two adjacent first film layers 31 among the multiple first film layers 31 are different. Since different materials have different lattice constants, the use of different materials for the two adjacent first film layers 31 can increase the degree of lattice mismatch at the interface, thereby increasing the degree of defect states at the interface, improving the recombination effect of electron-hole pairs generated under radiation conditions, and further improving the radiation resistance performance.

[0035] The present embodiment does not clearly limit the thickness of the radiation protection layer 3 . In one example, the thickness of the radiation protection layer 3 is 0.05 micrometers to 10 micrometers, and preferably 0.5 micrometers to 3 micrometers.

[0036] The present embodiment does not clearly limit the number of first film layers 31. The number of first film layers 31 is, for example, two, three or four. In practical applications, the number of first film layers 31 of the radiation protection layer 3 can be flexibly adjusted based on comprehensive considerations of multiple aspects such as process production difficulty, radiation protection performance and application scenarios.

[0037] Furthermore, at least one of the multiple first film layers 31 covers the outer edge of the piezoelectric layer 2 to achieve all-round protection of the piezoelectric layer 2. Preferably, the projection areas of the multiple first film layers 31 on the end surface of the metal substrate 1 are the same, and the multiple first film layers 31 all cover the outer edge of the piezoelectric layer 2 to further enhance the protection effect of the piezoelectric layer 2.

[0038] Furthermore, the electrode layer 4 includes an outer electrode 42 and an inner electrode 41, the outer electrode 42 is ring-shaped, the inner electrode 41 is arranged in the inner ring of the outer electrode 42 and is insulated from the outer electrode 42, preferably, the insulation distance between the outer electrode 42 and the inner electrode 41 is ≥1mm, and the outer electrode 42 and the inner electrode 41 do not interfere with each other. The electrode layer 4 is often subjected to patterned electrical isolation treatment so that two electrode leads can be realized on one side.

[0039] Preferably, the inner electrode 41 is located in the middle area of ​​the top end surface of the metal substrate 1 and is in close contact with the radiation protection layer 3. The edge of the outer electrode 42 extends from top to bottom to the top end surface of the metal substrate 1, and covers the outer edge of the radiation protection layer 3 and the piezoelectric layer 2. Since the piezoelectric layer 2 is polarized when subjected to mechanical effects such as pressure and vibration, charges are generated on its surface. The outer edge of the piezoelectric layer 2 covered by the outer electrode 42 can effectively collect these charges and prevent the charges from being lost, so as to ensure that the electrical signal generated by the piezoelectric effect can be accurately measured. At the same time, the outer edge of the piezoelectric layer 2 covered by the outer electrode 42 can also shield the piezoelectric layer 2, isolating the piezoelectric layer 2 from external interference such as electric fields and magnetic fields, thereby improving the signal quality and measurement accuracy of the sensor.

[0040] Furthermore, the electrode layer 4 includes a plurality of second film layers, and the plurality of second film layers are stacked layer by layer on the radiation protection layer 3. The electrode layer 4 includes a plurality of second film layers to avoid the situation where the electrode layer 4 falls off due to excessive internal stress caused by directly growing a thicker electrode layer 4, thereby ensuring the reliability of the combination between the piezoelectric film sensor and the metal substrate 11 and improving the accuracy of the preload detection structure.

[0041] The material and thickness of the electrode layer 4 of this embodiment are not clearly defined. In one example, the material of the electrode layer 4 includes a combination of one or more of indium, tin, aluminum, titanium, molybdenum, nickel, copper, silver, gold, platinum, niobium and tungsten. When the electrode layer 4 includes two second film layers, the material of the electrode layer 4 is, for example, Ni / Al, Ti / Sn, Mo / Ag, etc. The electrode layer 4 can be a single metal or an alloy material, such as a tin alloy, an aluminum alloy, etc. The thickness of the electrode layer 4 is, for example, 0 to 50 microns, and is not 0, preferably 10 to 20 microns.

[0042] Furthermore, the piezoelectric layer 2 includes a plurality of third film layers, and the plurality of third film layers are stacked layer by layer on the top end surface of the metal substrate 1. In this embodiment, by setting the piezoelectric layer 2 to a structure including a plurality of third film layers, more piezoelectric materials can be provided. When subjected to external forces, more piezoelectric materials are polarized, thereby generating more charges, significantly improving the output signal strength of the sensor. At the same time, the multi-layer structure can make the stress distribution inside the piezoelectric layer 2 more uniform, reducing signal fluctuations caused by local stress concentration or unevenness. The interaction and support between the layers of piezoelectric materials make the output signal of the sensor more stable and reliable when it is used for a long time or is subject to external interference.

[0043] The material and thickness of the piezoelectric layer 2 of this embodiment are not clearly defined. In one example, the material of the piezoelectric layer 2 includes zinc oxide ZnO, aluminum nitride AlN, cadmium sulfide CdS, zinc sulfide ZnS, quartz SiO2, tantalum oxide Ta2O5, lithium niobate LiNbO3 and lead zirconate titanate Pb (Zr x Ti 1-x )O3 or a combination of one or more thereof. When the electrode layer 4 includes two third film layers, the piezoelectric layer 2 is, for example, a composite piezoelectric layer composed of ZnO / AlN. The thickness of the piezoelectric layer 2 is set differently according to the frequency of the ultrasonic wave, generally in the range of 0 to 30 microns, and not 0. Preferably, the thickness of the piezoelectric layer 2 is 0.5 microns to 15 microns.

[0044] Further, the metal substrate 1 includes a fastener substrate or a flexible metal substrate 1, and the material of the metal substrate 1 is a combination of one or more of stainless steel, alloy steel, titanium and titanium alloy, and aluminum and aluminum alloy. Among them, the fastener substrate can be a bolt, a rod, a rivet, a stud bolt or other components of appropriate structure. The flexible metal is a metal foil with a thickness ranging from 10um to 1mm, and its shape is not fixed, mainly depending on the bolt used.

[0045] The device performance of the piezoelectric film sensor based on the metal substrate 1 of this embodiment before and after being irradiated with different total doses is described below in conjunction with specific test examples.

[0046] Test example 1:

[0047] A piezoelectric layer 2, an anti-radiation layer 3 and an electrode layer 4 are in-situ grown layer by layer from the inside to the outside on the top end surface of the metal substrate 1, wherein the material of the metal substrate 1 is 40CrNiMoA alloy steel, the material of the piezoelectric layer 2 is zinc oxide, the anti-radiation layer 3 includes two first film layers 31, one of the first film layers 31 is made of SiO2, the material of the other first film layer 31 is Al2O3, and the material of the electrode layer 4 is Al.

[0048] use 60 The Co source irradiates the piezoelectric film sensor and the metal substrate 1 with gamma rays as a whole, and collects the device performance of the piezoelectric film sensor before and after different total doses of radiation. The results are shown in Tables 1 and Figure 2a-2h It should be noted that since the ultrasonic echo signals of the same sensor before and after radiation appear at the same position, for the convenience of comparison, Figure 2a-2h In the figure, the radiated data is moved to the right by a fixed distance.

[0049] Table 1: Device performance of piezoelectric film sensors before and after different total doses of radiation

[0050]

[0051] Test Example 2

[0052] A piezoelectric layer 2, an anti-radiation layer 3 and an electrode layer 4 are in-situ grown layer by layer from the inside to the outside on the top end surface of the metal substrate 1, wherein the material of the metal substrate 1 is GH4169 nickel-based high-temperature alloy, the material of the piezoelectric layer 2 is zinc oxide, the anti-radiation layer 3 includes two first film layers 31, one of the first film layers 31 is made of Cr2O3, the material of the other first film layer 31 is Al2O3, and the material of the electrode layer 4 is Mo.

[0053] use 60 The Co source irradiates the piezoelectric film sensor and the metal substrate 1 with gamma rays as a whole, and collects the device performance of the piezoelectric film sensor before and after different total doses of radiation. The results are shown in Table 2 and Figure 3a-3h It should be noted that since the ultrasonic echo signals of the same sensor before and after radiation appear at the same position, for the convenience of comparison, Figure 3a-3h In the figure, the radiated data is moved to the right by a fixed distance.

[0054] Table 2: Device performance of piezoelectric film sensors before and after different total doses of radiation

[0055]

[0056] Test conclusion:

[0057] According to the results of Experimental Examples 1 and 2, the piezoelectric film sensor of this embodiment can withstand high total dose radiation together with the substrate, and when the total radiation dose reaches 160k Gy, the comprehensive piezoelectric coefficient of the piezoelectric film sensor and the intensity of the ultrasonic echo signal do not decay. Therefore, the piezoelectric film sensor of this embodiment has good radiation resistance and high performance stability, and can achieve long life cycle service in a radiation environment.

[0058] In addition, since the piezoelectric film sensor of this embodiment can withstand high-energy radiation with a total dose exceeding 160k Gy, referring to the maximum dose rate of radiation in different Earth orbits shown in Table 3 below, where 1 Gy = 1 rad (Si), it can be seen that the piezoelectric film sensor of this embodiment can also be used for long-term safety monitoring and early warning of key connection structures of spacecraft in different Earth orbits.

[0059] Table 3: Radiation dose rates of rays in different Earth orbits

[0060] Dose rate Low Earth Orbit 0.1k~1k rad(Si) / yr Low Earth Orbit 1k~10k rad(Si) / yr Medium Earth Orbit 100k rad(Si) / yr High Earth Orbit >10k rad(Si) / yr Interstellar travel 5k~10k rad(Si) / yr

[0061] This embodiment also proposes a fastener, which includes a fastener base and the radiation-resistant piezoelectric film sensor based on a metal base proposed above, and the piezoelectric film sensor is arranged on the top end surface of the fastener base. The fastener of this embodiment is suitable for radiation working conditions, and also has the advantages of high sound velocity, temperature resistance stability, environmental protection and lead-free, mature preparation process and high compatibility.

[0062] In general, the radiation-resistant piezoelectric film sensor and fastener based on a metal substrate of this embodiment, by setting an anti-radiation layer 3 between the piezoelectric layer 2 and the electrode layer 4, the anti-radiation layer 3 includes a plurality of first film layers 31 stacked, and the cross-sections between adjacent first film layers 31 have a large number of defect states due to lattice mismatch, so that the electron-hole pairs generated under the conditions of compound radiation can be realized, so that the ultrasonic signal of the piezoelectric film sensor shows good performance stability under high-dose radiation of high-energy rays, which provides a practical implementation plan for real-time monitoring and early warning of the safety of key structural connections throughout their life cycle, and can monitor the preload state of key structural connections of facilities and equipment in high-radiation environments such as aerospace and nuclear power in real time, so as to avoid operators being in radiation environments for a long time and protect personal safety.

[0063] The above is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed as a preferred embodiment, it is not used to limit the present invention. Any technician familiar with this patent can make some changes or modify the technical contents suggested above into equivalent embodiments without departing from the scope of the technical solution of the present invention. However, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention without departing from the content of the technical solution of the present invention still fall within the scope of the solution of the present invention.

Claims

1. A radiation-resistant piezoelectric film sensor based on a metal substrate, characterized in that: The piezoelectric film sensor includes a piezoelectric layer, an anti-radiation layer and an electrode layer which are sequentially stacked from the inside to the outside on the top end surface of the metal substrate. The anti-radiation layer includes a plurality of first film layers which are stacked layer by layer between the piezoelectric layer and the electrode layer.

2. The radiation-resistant piezoelectric film sensor based on a metal substrate according to claim 1, characterized in that: At least one first film layer among the plurality of first film layers covers the outer edge of the piezoelectric layer.

3. The radiation-resistant piezoelectric film sensor based on a metal substrate according to claim 2, characterized in that: The projection areas of the plurality of first film layers on the top end surface of the metal substrate are the same.

4. The radiation-resistant piezoelectric film sensor based on a metal substrate according to claim 1, characterized in that: At least two adjacent first film layers among the plurality of first film layers are made of different materials.

5. The radiation-resistant piezoelectric film sensor based on a metal substrate according to claim 1, characterized in that: The material of the radiation protection layer is a combination of one or more of Cr2O3, Al2O3, AlN, SiO2, Si3N4 and SiC.

6. The radiation-resistant piezoelectric film sensor based on a metal substrate according to claim 1, characterized in that: The thickness of the radiation protection layer is 0.05 micrometers to 10 micrometers.

7. The radiation-resistant piezoelectric film sensor based on a metal substrate according to any one of claims 1 to 6, characterized in that: The electrode layer includes an outer electrode and an inner electrode, the outer electrode is ring-shaped, the inner electrode is arranged in the inner ring of the outer electrode and is insulated from the outer electrode, the edge of the outer electrode extends from top to bottom to the top end surface of the metal substrate, and covers the outer edge of the anti-radiation layer and the piezoelectric layer.

8. The radiation-resistant piezoelectric film sensor based on a metal substrate according to claim 7, characterized in that: The electrode layer includes a plurality of second film layers, and the plurality of second film layers are stacked layer by layer on the radiation protection layer; And / or, the piezoelectric layer includes a plurality of third membrane layers, and the plurality of third membrane layers are stacked layer by layer on the top end surface of the metal substrate.

9. The radiation-resistant piezoelectric film sensor based on a metal substrate according to claim 7, characterized in that: The material of the electrode layer is one or more combinations of indium, tin, aluminum, titanium, molybdenum, nickel, copper, silver, gold, platinum, niobium and tungsten, and the thickness of the electrode layer is 0 to 50 microns, and is not 0; And / or, the material of the piezoelectric layer is ZnO, AlN, CdS, ZnS, SiO2, Ta2O5, LiNbO3 and Pb(Zr x Ti 1-x )O3, the thickness of the piezoelectric layer is 0 to 30 microns and is not 0.

10. A fastener, characterized in that: The fastener comprises a fastener base and the radiation-resistant metal-based piezoelectric film sensor according to any one of claims 1 to 9, wherein the piezoelectric film sensor is disposed on the top end surface of the fastener base.

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