General-purpose piezoelectric bimorph with temperature control and temperature compensation

Abstract

The present invention relates to a universal piezoelectric dual-chip with temperature control and temperature compensation functions. The universal piezoelectric dual-chip includes a composite piezoelectric dual-chip, a signal connection line group, a heat-conducting connecting piece, and a control board, wherein the composite piezoelectric dual-chip is respectively connected to the signal connection line group and the heat-conducting connecting piece for generating high-frequency strain; the signal connection line group is connected to the control board for inputting and outputting the strain control signal, surface temperature change feedback signal and control signal of the composite piezoelectric dual-chip; the heat-conducting connecting piece is connected to the control board for deriving the heat generated when the composite piezoelectric dual-chip is working; the control board is used to switch the working mode of the composite piezoelectric dual-chip and discharge the heat generated when the composite piezoelectric dual-chip is working. The universal piezoelectric dual-chip provided by the present invention can reduce the strain error caused by temperature drift, and meet the temperature control or compensation requirements of high strain frequency, high strain accuracy and lightweight miniaturized piezoelectric devices.

Description

Technical Field

[0001] The present invention relates to the technical fields of piezoelectric and thermoelectric ceramic materials, automatic control, etc., and in particular to a universal piezoelectric bimorph with temperature control and temperature compensation functions. Background Art

[0002] As piezoelectric technology matures, piezoelectric ceramics are increasingly used in high-frequency, micro-stroke, and high-precision motion fields. Piezoelectric bimorphs can adjust their own structural characteristics to have a larger motion range, and have become the main variety of lightweight, miniaturized, high-frequency, and high-precision motion devices. They can be seen in products such as dot-matrix laser radars, multi-channel laser communications, and high-precision laser beam pointing.

[0003] Piezoelectric bimorphs are usually placed on both sides of a sheet-like intermediate medium with a piezoelectric single crystal of the same shape. Based on the piezoelectric effect, voltage differences in opposite directions are applied to the single crystals on both sides of the intermediate medium. The single crystals on both sides extend and shorten accordingly, causing the bimorphs to bend along the thickness direction to form a small displacement. The purpose of controlling the strain modulation of the bimorphs is achieved by changing the voltage of the single crystals on both sides of the sheet-like intermediate medium in real time. The high strain frequency, high strain accuracy and light miniaturization characteristics of piezoelectric bimorph devices are their main advantages.

[0004] The hysteresis loop can reflect the relationship between the applied voltage and the morphological strain of the piezoelectric bimorph, which is closely related to the direction of voltage change. When the voltage changes in different directions, the corresponding strain of the bimorph in the loop under the same voltage is not the same. In order to ensure that the piezoelectric bimorph works under accurate strain, a closed-loop or open-loop control method is usually used for it. The closed-loop control method usually adds an external monitoring device to capture the strain state of the device in real time, and an external feedback module is used to compensate for the strain error; the open-loop control method usually compensates for the strain error of the device by looking up a table after a large number of experiments or tests on the device.

[0005] However, the piezoelectric bimorph will produce Joule heating effect during operation, and the temperature of the device will rise and cause strain drift. At this time, open-loop control is no longer effective. The closed-loop control method seems to be able to solve the bimorph strain temperature drift phenomenon, but the introduction of external monitoring devices is not conducive to the miniaturization of the device design.

[0006] In addition, in some special applications such as beam pointing locators, piezoelectric bimorphs are often connected to optical devices. The heat generated by the bimorphs may be transferred to the optical devices through heat conduction, causing them to distort and directly affecting the effect of the beam emitting device. At this time, it is also necessary to introduce a temperature control device outside the bimorph to reduce the thermal effect of the bimorph and the optical devices connected to it, so as to ensure the effective operation of the beam pointing locator. However, the addition of an additional temperature control device also hinders the miniaturization design of the device. Summary of the invention

[0007] The purpose of the present invention is to solve the above-mentioned problems existing in the prior art and to provide a universal piezoelectric dual-chip with temperature control and temperature compensation functions to reduce or compensate for the adverse effects of temperature drift and meet the temperature control or compensation requirements of high strain frequency, high strain accuracy and lightweight miniaturized piezoelectric devices.

[0008] The universal piezoelectric dual-chip with temperature control and temperature compensation functions provided by the present invention includes a composite piezoelectric dual-chip 11, a signal connecting line group 12, a thermally conductive connecting plate 13, and a control board 14. The composite piezoelectric dual-chip 11 is connected to the signal connecting line group 12 and the thermally conductive connecting plate 13, respectively. The signal connecting line group 12 is connected to the control board 14, and the thermally conductive connecting plate 13 is connected to the control board 14.

[0009] Furthermore, the composite piezoelectric bimorph 11 includes a special-shaped piezoelectric single crystal 111, an abnormal expansion characteristic material filler 112, a high thermal conductivity insulating film 113, and a PN junction assembly 114. The composite piezoelectric bimorph 11 has a symmetrical structure with the PN junction assembly 114 as the central layer, and the high thermal conductivity insulating film 113, the abnormal expansion characteristic material filler 112, and the special-shaped piezoelectric single crystal 111 are symmetrically arranged in sequence on the upper and lower sides of the PN junction assembly 114.

[0010] Furthermore, one side of the shaped piezoelectric single crystal piece 111 close to the high thermal conductivity insulating film 113 is serrated and the other side is flat, and the abnormal expansion characteristic material filler 112 is fixed in the serrations of the shaped piezoelectric single crystal piece 111 .

[0011] Furthermore, the shaped piezoelectric single crystal 111 also includes a control signal input electrode 1111 and an insulating coating. The control signal input electrode 1111 is located at one end of the shaped piezoelectric single crystal 111 and is connected to the control board 14 through a signal connecting line group 12; the insulating coating uniformly wraps the entire shaped piezoelectric single crystal 111 and the control signal input electrode 1111, and exposes a wire interface at the end of the shaped piezoelectric single crystal 111.

[0012] Furthermore, the PN junction assembly 114 includes a sheet-like high heat capacity constant temperature material layer 1141, a high thermal conductivity insulating film 1142, a series electrode layer 1143, a PN junction array layer 1144, and a connecting electrode sheet group layer 1145. The PN junction assembly 114 has a symmetrical structure centered on the sheet-like high heat capacity constant temperature material layer 1141, and the high thermal conductivity insulating film 1142, the series electrode layer 1143, the PN junction array layer 1144, and the connecting electrode sheet group layer 1145 are symmetrically arranged on the upper and lower sides of the sheet-like high heat capacity constant temperature material layer 1141.

[0013] Furthermore, the sheet-like high heat capacity constant temperature material 1141 is connected to the control board 14 through the thermally conductive connecting sheet 13; the high thermal conductivity insulating film 1142 is tightly connected to the sheet-like high heat capacity constant temperature material layer 1141; the two ends of the series electrode layer 1143 are respectively close to the high thermal conductivity insulating film 1142 and the PN junction array layer 1144, and the electrode interface is led out through the series electrode layer 1143 at one end of the composite piezoelectric dual crystal 11, and the series electrode layer 1143 at the other end of the composite piezoelectric dual crystal 11 wraps the high thermal conductivity insulating film 1142 and the layered high heat capacity constant temperature material layer 1141.

[0014] Furthermore, the PN junction array layer 1144 includes an upper PN junction array and a lower PN junction array distributed on the upper and lower sides of the sheet-like high heat capacity constant temperature material layer 1141, and the upper PN junction array and the lower PN junction array both include P-type semiconductors and N-type semiconductors that are alternately arranged in a straight line cycle, and the types of the two semiconductor monomers facing each other in the upper PN junction array and the lower PN junction array are opposite (i.e., P-type to N-type or N-type to P-type).

[0015] Furthermore, the connecting electrode sheet group layer 1145 is located outside the PN junction assembly 114, and each connecting electrode sheet group layer 1145 includes a plurality of sheet-shaped connecting electrode monomers, each of which is connected to two adjacent P-type semiconductors and N-type semiconductors on the same side to form a power supply circuit.

[0016] Furthermore, the signal connection line group 12 includes a plurality of wires, one end of which is connected to the control board 14, and the other end is respectively connected to the control signal input electrode 1111 at the end of the special-shaped piezoelectric single crystal and the P-end or N-end electrode interface of the series electrode layer in the PN junction assembly (i.e., 11431, 11432).

[0017] Furthermore, the thermally conductive connecting sheet 13 includes a sheet of highly thermally conductive flexible material and an insulating outer layer. The sheet of highly thermally conductive flexible material is connected to the sheet of high heat capacity constant temperature material layer 1141 for heat dissipation. The insulating outer layer tightly wraps the sheet of highly thermally conductive flexible material and exposes its two ends.

[0018] Compared with existing similar products or technologies, the beneficial effects of the present invention are mainly reflected in the following aspects:

[0019] (1) A universal piezoelectric bimorph with temperature control and temperature compensation functions was developed. The conformal design of the special-shaped piezoelectric single crystal and the filler with abnormal expansion characteristics reduced the problem of uneven stress distribution in the piezoelectric film caused by temperature control or compensation, and reduced the risk of piezoelectric film breakage.

[0020] (2) Relying on the spatial structural layout of the PN junction array, the overall stiffness design of the composite piezoelectric bimorph device is met. The temperature control and temperature compensation working modes are designed through the Peltier effect and Seebeck effect generated by the PN junction, which can reduce or compensate for the strain error caused by the temperature drift of the piezoelectric bimorph;

[0021] (3) Adaptive temperature compensation of piezoelectric films without external monitoring equipment and surface temperature control of piezoelectric films connected to precision optical devices are realized, meeting the temperature control or compensation requirements of high strain frequency, high strain accuracy and lightweight miniaturized piezoelectric devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic diagram of the structure of the universal piezoelectric bimorph described in the present invention.

[0023] Figure 2 Schematic diagram of the structure of the composite piezoelectric bimorph.

[0024] Figure 3 It is a structural schematic diagram of a PN junction component.

[0025] Figure 4 This is a schematic diagram of the structure of the control panel.

[0026] Figure 5 This is the circuit diagram of the control circuit module.

[0027] Figure 6 This is the circuit connection diagram for the temperature control working mode.

[0028] Figure 7 This is the circuit connection diagram for temperature compensation working mode.

[0029] Reference numerals: 1 general-purpose piezoelectric bimorph, 11 composite piezoelectric bimorph, 111 special-shaped piezoelectric unimorph, 1111 control signal input electrode, 112 abnormal expansion characteristic filler, 113 high thermal conductivity insulating film, 114 PN junction assembly, 1141 sheet-shaped high heat capacity constant temperature material layer, 1142 high thermal conductivity insulating layer, 1143 series electrode layer, 11431 series electrode layer P-end interface, 11432 series electrode layer N-end interface, 1144 PN junction array layer, 1145 Connecting electrode sheet group layer, 12 signal connecting line group, 13 thermal conductive connecting sheet, 14 control board, 141 strain control high voltage signal input interface, 142 working mode selection switch, 143 temperature control / compensation signal input port, 144 temperature compensation signal output port, 145 high thermal capacity constant temperature block, 146 cooling fan, 147 control circuit module; 2 temperature control signal input line, 3 temperature compensation signal input line, 4 signal transmission line, 5 high voltage amplifier, 6 high voltage signal output line. DETAILED DESCRIPTION

[0030] In order to enable ordinary technicians in the field to fully understand the technical solutions and beneficial effects of the present invention, the following is a further detailed description in conjunction with specific embodiments and drawings.

[0031] like Figure 1 A universal piezoelectric dual-chip 1 with temperature control and temperature compensation functions is shown, which mainly includes a composite piezoelectric dual-chip 11, a signal connection line group 12, a heat-conducting connecting piece 13, and a control board 14. Among them, the composite piezoelectric dual-chip 11 is connected to the signal connection line group 12 and the heat-conducting connecting piece 13 respectively, and is used to generate high-frequency strain. The signal connection line group 12 is connected to the control board 14, and plays different roles in different states: ① In the temperature control working mode, the signal connection line group 12 is used to input the strain and surface temperature control signal of the composite piezoelectric dual-chip 11; ② In the temperature compensation working mode, the signal connection line group 12 is used to input the strain control signal of the composite piezoelectric dual-chip 11 and output the surface temperature change feedback signal of the composite piezoelectric dual-chip 11. The heat-conducting connecting piece 13 is connected to the control board 14, and is used to derive the heat generated when the composite piezoelectric dual-chip 11 is working. The control board 14 has multiple functions: one is to control the composite piezoelectric dual chip 11 to switch between the temperature control working mode and the temperature compensation working mode; the other is to connect the external input control signal and discharge the heat generated by the composite piezoelectric dual chip 11 when it is working out of the control board 14.

[0032] like Figure 2 As shown, the composite piezoelectric dual-chip 11 includes a pair of shaped piezoelectric single crystals 111, a plurality of abnormal expansion characteristic material fillers 112, a pair of high thermal conductivity insulating films 113, and a group of PN junction components 114. The functions of these components are as follows: the shaped piezoelectric single crystal 111 is used to generate high-frequency strain, the abnormal expansion characteristic material filler 112 is used to balance the stress generated by the temperature gradient in the shaped piezoelectric single crystal 111, the high thermal conductivity insulating film 113 is used to isolate the electrical signals on both sides of the film and efficiently conduct heat, and the PN junction component 114 is used to reduce the surface temperature of the shaped piezoelectric single crystal 111 and feedback the temperature drift of the shaped piezoelectric single crystal 111.

[0033] The connection relationship of each component in the composite piezoelectric bimorph 11 is as follows: the PN junction component 114 is located in the middle, a pair of high thermal conductivity insulating films 113 are horizontally distributed on the upper and lower sides of the PN junction component 114, and the abnormal expansion characteristic material filler 112 is fixed in the sawtooth groove of the special-shaped piezoelectric single crystal 111 and is distributed as a whole on the outside of the high thermal conductivity insulating film 113, and the abnormal expansion characteristic material filler 112 is close to the high thermal conductivity insulating film 113. This layout makes the composite piezoelectric bimorph 11 have a symmetrical structure with the PN junction component 114 as the central layer.

[0034] The shaped piezoelectric single crystal 111 includes a shaped piezoelectric single crystal, a control signal input electrode 1111 and an insulating coating. One side of the shaped piezoelectric single crystal is serrated, and the other side is a smooth plane, and an abnormal expansion characteristic material filler 112 is arranged in its serrations. The control signal input electrode 1111 is located on one side of the shaped piezoelectric single crystal and is connected to the control board 14 through a signal connection line group 12 and a heat-conducting connection board 13. The insulating coating uniformly wraps the entire shaped piezoelectric single crystal and the control signal input electrode 1111, and exposes the wire interface at the left end of the shaped piezoelectric single crystal. The insulating coating is mainly used to isolate the electrical signal of the external contact surface of the shaped piezoelectric single crystal.

[0035] like Figure 3 As shown, the PN junction assembly 114 includes a sheet-like high heat capacity constant temperature material layer 1141, a high thermal conductivity insulating film layer 1142, a series electrode layer 1143, a PN junction array layer 1144, and a connecting electrode sheet group layer 1145. The functions of these components are as follows: the sheet-like high heat capacity constant temperature material layer 1141 is used to provide a constant temperature area in the composite piezoelectric dual crystal 11 that is similar to the external ambient temperature, the high thermal conductivity insulating film layer 1142 is used to isolate the electrical signal between the PN junction array layer 1144 and the sheet-like high heat capacity constant temperature material layer 1141, the series electrode layer 1143 is used to transfer heat to the sheet-like high heat capacity constant temperature material layer 1141, the PN junction array layer 1144 is used to generate a Peltier effect in a temperature control working mode or a Seebeck effect in a temperature compensation working mode, and the connecting electrode sheet group layer 1145 is used to connect the two poles of a single PN junction to form a power supply circuit and take away the heat generated by the special-shaped piezoelectric single crystal 111.

[0036] The connection relationship of each component in the PN junction assembly 114 is as follows: the sheet-like high heat capacity constant temperature material layer 1141 is located in the middle, and the high thermal conductivity insulating film layer 1142, the series electrode layer 1143, the PN junction array layer 1144, and the connecting electrode sheet group layer 1145 are symmetrically arranged from the inside to the outside on the upper and lower sides. This layout makes the composite piezoelectric bimorph 11 have a symmetrical structure with the PN junction assembly 114 as the central layer. The sheet-like high heat capacity constant temperature material 1141 is connected to the control board 14 through the thermal conductive connecting sheet 13, the high thermal conductivity insulating film layer 1142 is closely connected to the sheet-like high heat capacity constant temperature material layer 1141, and the series electrode layer 1143 is closely attached to the high thermal conductivity insulating film layer 1142 and connected to each PN junction monomer of the PN junction array layer 1144 in a series manner. The left end of the series electrode layer 1143 leads to the series electrode layer P-end interface 11431 and the series electrode layer N-end interface 11432, and the right end of the series electrode layer 1143 wraps the high thermal conductivity insulation layer 1142. The PN junction array 1144 can be arranged sporadically according to the stiffness requirements of the composite piezoelectric bimorph 11, and the degree of its tight or loose arrangement determines the overall strain capacity of the composite piezoelectric bimorph 11. The connecting electrode sheet group layer 1145 is located at the outermost side of the PN junction assembly 114, and its sheet-shaped connecting electrode monomer is slightly larger than each PN junction monomer in the PN junction array 1144, and the spatial distribution of each sheet-shaped connecting electrode monomer is the same as the spatial distribution of the PN junction array, and the two ends of the sheet-shaped connecting electrode monomer are respectively connected to the P-type semiconductor and the N-type semiconductor on the same side.

[0037] The signal connection line group 12 is composed of several wires, and these wires can be used to connect the control board 14 to each control signal input electrode 1111 in the composite piezoelectric bimorph 11 and the series electrode layer P-end interface 11431 and the series electrode layer N-end interface 11432 in the PN junction component 114. The series electrode layer P-end interface 11431 connected to the P-end of the PN junction is connected to the negative electrode interface in the middle of the working mode selection switch 142 of the control board 14 through a lead, and the series electrode layer N-end interface 11432 connected to the N-end of the PN junction is connected to the positive electrode interface in the middle of the working mode selection switch 142 of the control board 14 through a lead. The specific circuit diagram is shown in FIG. Figure 5 shown.

[0038] The heat-conducting connecting sheet 13 is composed of a sheet-like high-thermal-conductivity flexible material and an insulating outer layer. The sheet-like high-thermal-conductivity flexible material is connected to a sheet-like high-heat-capacity constant-temperature material layer 1141, and is used to transfer the heat generated by the composite piezoelectric bimorph 11 to the high-heat-capacity constant-temperature block 145 in the control board 14. The insulating outer layer tightly wraps the sheet-like high-thermal-conductivity flexible material and exposes its two ends, thereby isolating the heat transfer between the sheet-like high-thermal-conductivity flexible material and the external environment.

[0039] like Figure 4As shown, the control board 14 includes a strain control high-voltage signal input interface 141, a working mode selection switch 142, a temperature control / compensation signal input interface 143, a temperature compensation signal output interface 144, a high heat capacity constant temperature block 145, a cooling fan 146, and a control circuit module 147. The strain control high-voltage signal input interface 141 is used for an external input high-voltage signal to adjust the strain of the composite piezoelectric bimorph 11. The working mode selection switch 142 is used to switch the working mode of the composite piezoelectric bimorph 11 between temperature control and temperature compensation. The temperature control / compensation signal input interface 143 is used to receive an external input temperature control electrical signal in the temperature control working mode to appropriately reduce the external surface temperature of the composite piezoelectric bimorph, or to input a strain control signal in the temperature compensation working mode, which is used to real-time feedback the temperature drift degree of the composite piezoelectric bimorph 11 and real-time adaptive compensation. The temperature compensation signal output interface 144 is used to output the compensated strain control signal in the temperature compensation working mode, and it can be connected to the strain control high-voltage signal input interface 141 after passing through the external high-voltage amplifier 5. The high thermal capacity constant temperature block 145 is made of the same material as the sheet-shaped high thermal capacity constant temperature material layer 1141, but its volume is several times that of the sheet-shaped high thermal capacity constant temperature material layer 1141. The heat dissipation fan 146 is located on the upper part of the high thermal capacity constant temperature block 145, and the heat dissipation is performed in real time through the heat dissipation fan 146. The control circuit module 147 is used to provide an operating voltage for the heat dissipation fan 146, and amplify and output an appropriate feedback temperature compensation signal in the temperature compensation working mode.

[0040] like Figure 5 As shown, the strain control high-voltage signal input interface 141 in the control circuit module 147 is divided into three cables, the end marked with "+" is connected to the DC positive high-voltage signal, the end marked with "-" is connected to the DC negative high-voltage signal, and the end marked with "s" is connected to the time-varying signal between the DC positive high voltage and the DC negative high voltage. Among them, the interfaces marked with "+" and "-" are connected to the control signal input electrodes 1111 on the two outer sides of the special-shaped piezoelectric single crystal 111 through two wires in the connecting wire group 12; the interface marked with "s" is connected to the control signal input electrodes 1111 on the two sawtooth edge sides of the short-circuited special-shaped piezoelectric single crystal 111 through another wire in the connecting wire group 12. At the same time, the interface marked with "+" is connected to the cooling fan 146 after resistor voltage division.

[0041] like Figure 5As shown, the strain control high-voltage signal input interface 141 is divided into three cables, the end marked with "+" is connected to the DC positive high-voltage signal, the end marked with "-" is connected to the DC negative high-voltage signal, and the end marked with "s" is connected to the time-varying signal between the DC positive high voltage and the DC negative high voltage. Among them, the interfaces marked with "+" and "-" are connected to the control signal input electrodes 1111 on the two outer sides of the special-shaped piezoelectric single crystal 111 through two wires in the connecting wire group 12 respectively; the interface marked with "s" is connected to the control signal input electrodes 1111 on the two sawtooth edge sides of the short-circuited special-shaped piezoelectric single crystal 111 through another wire in the connecting wire group 12. At the same time, the interface marked with "+" is connected to the cooling fan 146 after resistor voltage division.

[0042] The working mode selection switch 142 in the control circuit module 147 is a double-pole double-position switch, and the middle welding point of the switch is connected to the P-end interface 11431 of the series electrode layer and the N-end interface 11431 of the series electrode layer through two wires in the connecting wire group 12. Among them, the P-end interface 11431 of the series electrode layer is connected to the switch electrode marked with a "-" sign and grounded, and the N-end interface 11432 of the series electrode layer is connected to the switch electrode marked with a "+" sign. The working mode selection switch 142 is connected to Figure 5 The positive and negative signal interface terminals corresponding to "1" in the figure adjust the composite piezoelectric dual chip to the temperature control working mode; the working mode selection switch 142 is connected to the positive and negative signal interface terminals corresponding to "2" to adjust the composite piezoelectric dual chip to the temperature compensation working mode. When the composite piezoelectric dual chip is in the temperature compensation working mode, the voltage between the positive and negative signals at "2" can be controlled by controlling the resistance ratio of Rf and R1 to dozens of times to control the amplification ratio of the output signal of the integrated operational amplifier, and the feedback signal can be compared with the original control, thereby realizing adaptive compensation.

[0043] like Figure 6 As shown, when in the temperature control working mode, the temperature control / compensation signal input interface 143 is connected to the temperature control signal input line 2, which prompts the PN junction component 114 to produce the Peltier effect. The Peltier effect will prompt the heat generated by the special-shaped piezoelectric single crystal 111 inside the composite piezoelectric bimorph 11 to flow to the sheet-like high heat capacity constant temperature material layer 1141 (large heat capacity, slow temperature rise) in the PN junction component 114, and the heat is gradually transferred to the high heat capacity constant temperature block 145 on the control board 14 through the heat conductive connecting piece 13. The high heat capacity constant temperature block 145 is relatively large in size, and the temperature rise rate will be further reduced. At the same time, the excess heat is discharged from the system through the heat dissipation effect of the fan.

[0044] like Figure 7As shown, when in the temperature compensation working mode, the PN junction component 114 generates the Seebeck effect and generates an electromotive force. After the electromotive force is amplified by the integrated operational amplifier device, it is compared with the original control signal input from the temperature control / compensation signal input interface 143 in the rectifier circuit and the addition and subtraction circuit, and forms an output signal after feedback compensation to realize adaptive compensation signal control. At this time, the compensated piezoelectric dual-chip driving original electrical signal is output from the temperature compensation output signal interface 144, and the signal is connected to the input end of the high-voltage amplifier 5 through the signal transmission line 4, and the amplified high-voltage control signal is output from its output end, and is transmitted to the strain high-voltage control signal input interface 141 by the high-voltage signal output line 6, so as to realize the closed-loop control of the composite piezoelectric dual-chip 11.

[0045] The present invention reduces the problem of uneven stress distribution of the piezoelectric sheet caused by temperature control or compensation and the risk of piezoelectric sheet fracture through the conformal design of the special-shaped piezoelectric single crystal and the filler of the material with abnormal expansion characteristics. It also relies on the spatial structural layout of the PN junction array to meet the overall stiffness design of the composite piezoelectric dual-chip device and the Peltier effect and Seebeck effect it can produce, thereby realizing autonomous control or adaptive temperature compensation of the piezoelectric dual-chip, thereby meeting the strain requirements of high strain frequency, high strain accuracy and lightweight miniaturized piezoelectric devices.

[0046] The above is only a preferred embodiment of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A general-purpose piezoelectric bimorph with temperature control and temperature compensation functions, characterized in that: The universal piezoelectric dual chip includes a composite piezoelectric dual chip, a signal connecting wire group, a thermally conductive connecting plate, and a control board. The composite piezoelectric dual chip is connected to the signal connecting wire group and the thermally conductive connecting plate respectively, and the signal connecting wire group and the thermally conductive connecting plate are both connected to the control board.

2. The universal piezoelectric bimorph as claimed in claim 1, characterized in that: The composite piezoelectric bimorph includes a special-shaped piezoelectric single crystal, a filler with abnormal expansion characteristics material, a high thermal conductivity insulating film, and a PN junction component. The composite piezoelectric bimorph has a symmetrical structure with the PN junction component as the central layer, and the high thermal conductivity insulating film, the filler with abnormal expansion characteristics material, and the special-shaped piezoelectric single crystal are symmetrically arranged in sequence on both sides of the PN junction component.

3. The universal piezoelectric bimorph as claimed in claim 2, characterized in that: The side of the special-shaped piezoelectric single crystal close to the high thermal conductivity insulating film is serrated and the other side is flat, and the abnormal expansion characteristic material filler is fixed in the serrations of the special-shaped piezoelectric single crystal.

4. The universal piezoelectric bimorph as claimed in claim 2, characterized in that: The shaped piezoelectric single crystal also includes a control signal input electrode and an insulating coating. The control signal input electrode is located at one side end of the shaped piezoelectric single crystal and is connected to the control board through a signal connecting line group; the insulating coating uniformly wraps the entire shaped piezoelectric single crystal and the control signal input electrode, and exposes a wire interface at the end of the shaped piezoelectric single crystal.

5. The universal piezoelectric bimorph as claimed in claim 2, characterized in that: The PN junction assembly includes a sheet-like high heat capacity constant temperature material layer, a high thermal conductivity insulating film, a series electrode layer, a PN junction array layer, and a connecting electrode sheet group layer. The PN junction assembly has a symmetrical structure centered on a uniform sheet-like high heat capacity constant temperature material layer, and a high thermal conductivity insulating film, a series electrode layer, a PN junction array layer, and a connecting electrode sheet group layer are symmetrically arranged in sequence on both sides of the sheet-like high heat capacity constant temperature material layer.

6. The universal piezoelectric bimorph as claimed in claim 5, characterized in that: The sheet-like high heat capacity constant temperature material is connected to the control board through a thermally conductive connecting sheet, the high thermal conductivity insulating film is tightly connected to the sheet-like high heat capacity constant temperature material layer, the two ends of the series electrode layer are respectively close to the high thermal conductivity insulating film and the PN junction array layer, and the electrode interface is led out through the series electrode layer at one end of the composite piezoelectric bimorph, and the series electrode layer at the other end of the composite piezoelectric bimorph wraps the high thermal conductivity insulating film and the layered high heat capacity constant temperature material layer.

7. The universal piezoelectric bimorph as claimed in claim 5, characterized in that: The PN junction array layer includes an upper PN junction array and a lower PN junction array distributed on both sides of the sheet-shaped high heat capacity constant temperature material layer. The upper PN junction array and the lower PN junction array both include P-type semiconductors and N-type semiconductors that are alternately and cyclically arranged along a straight line, and the types of the two opposite semiconductors in the upper PN junction array and the lower PN junction array are opposite.

8. The universal piezoelectric bimorph as claimed in claim 5, characterized in that: The connecting electrode sheet group layer is located outside the PN junction component, and the connecting electrode sheet group layer includes a series of sheet-shaped connecting electrode monomers, each of which is connected to the adjacent P-type semiconductor and N-type semiconductor to form a power supply circuit.

9. The universal piezoelectric bimorph as claimed in claim 1, characterized in that: The signal connection line group includes a plurality of wires, one end of which is connected to the control board, and the other end is respectively connected to the control signal input electrode at the end of the special-shaped piezoelectric single crystal and the P-end or N-end electrode interface of the series electrode layer in the PN junction component.

10. The universal piezoelectric bimorph as claimed in claim 1, characterized in that: The thermally conductive connecting sheet comprises a sheet-like high thermal conductivity flexible material and an insulating outer layer. The sheet-like high thermal conductivity flexible material is connected to a sheet-like high heat capacity constant temperature material layer for heat dissipation. The insulating outer layer tightly wraps the sheet-like high thermal conductivity flexible material and exposes both ends of the sheet-like high thermal conductivity flexible material.

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