Imaging device and electronic apparatus

Abstract

An imaging device according to one embodiment of the present disclosure includes: a semiconductor substrate having a first surface and a second surface facing each other and a pixel array portion in which a plurality of unit pixels are arranged in an array in a row direction and a column direction; a photoelectric conversion unit that is provided on the second surface side of the semiconductor substrate for each unit pixel and generates an electric charge corresponding to the received light amount by photoelectric conversion; a charge holding section provided on the first surface side of the semiconductor substrate for each unit pixel and holding the charge transferred from the photoelectric conversion section; and a first light shielding portion disposed on the semiconductor substrate between the photoelectric conversion portion and the charge holding portion, and including a first horizontal light shielding portion extending in an in-plane direction of the semiconductor substrate and a first vertical light shielding portion orthogonal to the first horizontal light shielding portion, wherein the first vertical light shielding portion includes a first row light shielding portion and a first column light shielding portion formed along both adjacent sides of a rectangular unit pixel, and is provided for each unit pixel positioned every other column and in a 45-degree inclined direction, and in a plan view, the first row light shielding portion and the first column light shielding portion are positioned in the first row light shielding portion. The first horizontal light shielding portion is an end portion located at or near an intersection point of the first row light shielding portion and the first column light shielding portion provided for each unit pixel positioned in a 45-degree inclined direction every other column.

Description

Technical Field

[0001] The present disclosure relates to an image pickup apparatus and an electronic device each of which performs image pickup by performing photoelectric conversion. Background Art

[0002] For example, with respect to an imaging device in which a photoelectric conversion unit is arranged on the light irradiation surface side of a Si{111} substrate, and a charge holding unit is arranged on the surface on the opposite side of the light irradiation surface, Patent document 1 proposes to improve the light shielding performance of the charge holding unit by forming a space in the horizontal direction of the substrate from the end of a groove using the crystal orientation anisotropy of alkaline etching, and providing a horizontal light shielding unit between the photoelectric conversion unit and the photocharge holding unit.

[0003] Citation list

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. WO2019 / 240207 Summary of the invention

[0006] Incidentally, it is desirable to improve the charge transfer efficiency of the image pickup device.

[0007] Therefore, it is desirable to provide an image pickup device and an electronic device each of which achieves excellent light shielding performance of a charge holding portion and excellent charge transfer efficiency.

[0008] An imaging device according to an embodiment of the present disclosure includes a semiconductor substrate, a photoelectric conversion unit, a charge holding unit, and a first light shielding unit. The semiconductor substrate includes a first surface and a second surface opposite to each other. The semiconductor substrate includes a pixel array unit in which a plurality of unit pixels are arranged in an array in a row direction and a column direction. The photoelectric conversion unit is provided on the second surface side of the semiconductor substrate for each unit pixel, and generates a charge corresponding to the amount of light received by photoelectric conversion. The charge holding unit is provided on the first surface side of the semiconductor substrate for each unit pixel, and holds the charge transferred from the photoelectric conversion unit. The first light shielding unit is provided in the semiconductor substrate and is located between the photoelectric conversion unit and the photocharge holding unit. The first light shielding unit includes a first horizontal light shielding unit and a first vertical light shielding unit. The first horizontal light shielding unit extends in a plane direction of the semiconductor substrate. The first vertical light shielding unit is orthogonal to the first horizontal light shielding unit. The first vertical light shielding unit includes a first row light shielding unit and a first column light shielding unit formed along two sides of the unit pixel having a rectangular shape that are adjacent to each other. The first vertical light shielding portion is provided for each unit pixel positioned in every other column and in a 45-degree inclined direction. In a plan view, the first horizontal light shielding portion has an end portion at a position connecting one and the other of intersections of the first row light shielding portion and the first column light shielding portion provided for each unit pixel positioned in every other column and in a 45-degree inclined direction or in the vicinity thereof.

[0009] An electronic device according to an embodiment of the present disclosure includes the above-described imaging device according to an embodiment of the present disclosure.

[0010] In each of an image pickup device according to an embodiment of the present disclosure and an electronic device according to an embodiment of the present disclosure, a light shielding portion that blocks light between a photoelectric conversion portion and a charge retention portion includes a first vertical light shielding portion and a first horizontal light shielding portion. The first vertical light shielding portion includes a first row light shielding portion and a first column light shielding portion formed along two sides adjacent to each other of a unit pixel having a rectangular shape. The first vertical light shielding portion is provided for each unit pixel positioned in an inclined direction of 45 degrees in every other column. In a plan view, the first horizontal light shielding portion has an end at or near a position connecting one and the other of the intersections of the first row light shielding portion and the first column light shielding portion provided for each unit pixel positioned in an inclined direction of 45 degrees in every other column. Therefore, a light shielding portion with high dimensional accuracy can be realized. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 : is a block diagram showing a configuration example of functions of the image pickup device according to the first embodiment of the present disclosure.

[0012] Figure 2: is a block diagram showing a configuration example of functions of an image pickup device as a first modification example of the first embodiment.

[0013] Figure 3 : is a block diagram showing a configuration example of functions of an image pickup device as a second modification example of the first embodiment.

[0014] Figure 4 It shows Figure 1 Circuit diagram of the circuit structure of the imaging device shown in FIG.

[0015] Figure 5 It shows Figure 1 Schematic diagram of an example of a planar structure of an imaging device shown in FIG.

[0016] Figure 6 It shows Figure 5 The diagram is a schematic diagram of an example of a cross-sectional configuration of an imaging device shown.

[0017] Fig. 7A It is used to illustrate Figure 1 A schematic plan view of a method for forming a horizontal light shielding portion is shown.

[0018] Figure 7B It is shown Fig. 7A Schematic plan view of the subsequent process.

[0019] Figure 8 is a schematic diagram showing a layout example of color filters.

[0020] Fig. 9 : is a schematic diagram showing an example of a planar configuration of an image pickup device according to Modification 1 of the present disclosure.

[0021] Fig.10 : is a schematic diagram showing an example of a planar configuration of an image pickup device according to a second embodiment of the present disclosure.

[0022] Fig.11 It shows Fig.10 The diagram is a schematic diagram of an example of a cross-sectional configuration of an imaging device shown.

[0023] Fig.12 : is a schematic diagram showing an example of a planar configuration of an image pickup device according to a third embodiment of the present disclosure.

[0024] Fig.13 It shows Fig.12 A schematic diagram of a cross-sectional structure of a camera device shown.

[0025] Fig.14 It shows Fig.12 A schematic diagram of another cross-sectional structure of the camera device shown.

[0026] Fig.15 : is a schematic diagram showing a cross-sectional configuration of an image pickup device according to Modification 2 of the present disclosure.

[0027] Fig.16 is a schematic diagram showing an example of a planar configuration according to a fourth embodiment of the present disclosure.

[0028] Fig.17 is a schematic diagram showing another example of the planar configuration according to the fourth embodiment of the present disclosure.

[0029] Fig.18 is a schematic diagram showing another example of the planar configuration according to the fourth embodiment of the present disclosure.

[0030] Fig.19 : is a schematic diagram showing an example of a planar configuration of an image pickup device according to Modification 3 of the present disclosure.

[0031] Fig. 20 It is used to illustrate Fig.19 The diagram shows the structure of the vertical light shielding portion.

[0032] Fig.21 It shows that Figure 1 A block diagram showing an example of the configuration of electronic equipment of an imaging device shown.

[0033] Fig.22A It shows that Figure 1 Schematic diagram of an example of the overall structure of a light detection system of an imaging device shown in FIG.

[0034] Fig. 22B It shows Fig.22A A diagram showing an example of a circuit configuration of a light detection system.

[0035] Fig.23 is a diagram showing an example of a schematic configuration of an endoscopic surgery system.

[0036] Fig.24 is a block diagram showing an example of the functional configuration of a camera head and a camera control unit (CCU).

[0037] Fig.25 is a block diagram showing an example of a schematic configuration of a vehicle control system.

[0038] Fig.26 It is a diagram for assisting in explaining an example of the installation positions of the vehicle exterior information detection unit and the imaging unit. DETAILED DESCRIPTION

[0039] Hereinafter, some embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The following describes specific examples of the present disclosure, and the present disclosure is not limited to the following embodiments. In addition, the arrangement, size, size ratio, etc. of the components shown in the various drawings of the present disclosure are not limited to these. Note that the description will be given in the following order.

[0040] 1. First Implementation Method

[0041] (Example of an imaging device including a light shielding portion including a vertical light shielding portion having a sawtooth shape and an end portion at a horizontal light shielding portion at a position connecting one of intersection points of the vertical light shielding portions and the other)

[0042] 2. Modification 1

[0043] (Example of an imaging device in which adjacent sensor pixels have a point-symmetric layout)

[0044] 3. Second Implementation Method

[0045] (Example of an Imaging Device Including Two Light Shielding Portions Extending in the In-Plane Direction of a Semiconductor Substrate at Positions Different from Each Other)

[0046] 4. Third Implementation Method

[0047] (Another Example of an Imaging Device Including Two Light Shielding Portions Extending in the In-Plane Direction of a Semiconductor Substrate at Positions Different from Each Other)

[0048] 5. Modification 2

[0049] (Another Example of an Imaging Device Including Two Light Shielding Portions Provided Through a Semiconductor Substrate)

[0050] 6. Fourth Implementation Method

[0051] (Layout example of vertical shading section)

[0052] 7. Modification 3

[0053] (Another example of vertical light shielding portion layout)

[0054] 8. Application Examples

[0055] 9. Practical application examples

[0056] [1. First embodiment]

[0057] [Overall Structure of Camera Device]

[0058] Figure 1 : is a block diagram showing a functional configuration example of the image pickup apparatus 1 (image pickup apparatus 1A) according to an embodiment of the present disclosure.

[0059] For example, the imaging device 1A is a back-illuminated image sensor of a so-called global shutter method such as a CMOS (Complementary Metal Oxide Semiconductor) image sensor, and captures an image by receiving light from a subject, photoelectrically converting the received light, and generating an image signal.

[0060] The global shutter method refers to a method of performing global exposure, in which exposure is started for all pixels substantially at the same time, and exposure is ended for all pixels at the same time. Here, all pixels refer to all pixels in the portion where the image appears, and do not include pseudo pixels, etc. In addition, if the time difference, image distortion, etc. are small enough not to cause problems, the global shutter method also includes a method of moving the area where global exposure is performed while performing global exposure in units of multiple rows (for example, dozens of rows) instead of performing global exposure for all pixels at the same time. In addition, the global shutter method also includes a method of performing global exposure on pixels in a predetermined area instead of all pixels in the portion where the image appears.

[0061] A back-illuminated image sensor refers to an image sensor having the following structure: a photoelectric conversion element is provided between a light receiving surface where light from a subject is incident and a wiring layer where wiring for driving transistors and the like of each pixel is provided. The photoelectric conversion element receives light from the subject and converts the light into an electrical signal. Examples of the photoelectric conversion element include a photodiode (PD).

[0062] The image pickup device 1A includes, for example, a pixel array section 111 , a vertical driver 112 , a column signal processor 113 , a data storage section 119 , a horizontal driver 114 , a system controller 115 , and a signal processor 118 .

[0063] In the image pickup device 1A, a pixel array section 111 is formed on a semiconductor substrate 11 (described later). Peripheral circuits including but not limited to a vertical driver 112, a column signal processor 113, a data storage section 119, a horizontal driver 114, a system controller 115, and a signal processor 118 are formed on, for example, the same semiconductor substrate 11 on which the pixel array section 111 is also formed.

[0064] The pixel array section 111 includes a plurality of sensor pixels 121 (unit pixels), each of which includes a photoelectric conversion section 51 (described later). The photoelectric conversion section 51 generates electric charge corresponding to the amount of light incident from the subject, and accumulates the generated electric charge. Figure 1As shown, the sensor pixels 121 are arranged in each of the horizontal direction (row direction) and the vertical direction (column direction). In the pixel array section 111, the pixel drive lines 116 are wired in the row direction for each pixel row including the sensor pixels 121 arranged in a row in the row direction; and the vertical signal lines (VSL) 117 are wired in the column direction for each pixel column including the sensor pixels 121 arranged in a row in the column direction.

[0065] The vertical driver 112 includes a shift register, an address decoder, etc. The vertical driver 112 drives all of the plurality of sensor pixels 121 in the pixel array section 111 at the same time or drives them in units of pixel rows by supplying a signal or the like to each of the plurality of sensor pixels 121 via a corresponding one of the plurality of pixel driving lines 116 .

[0066] The column signal processor 113 is supplied with signals output from each sensor pixel 121 in a pixel row selectively scanned by the vertical driver 112 via a corresponding one of the VSLs 117. The column signal processor 113 performs predetermined signal processing on the signals output from each unit pixel in the selected row via the VSL 117 for each pixel column of the pixel array section 111, and temporarily stores the image signal after the signal processing.

[0067] Specifically, the column signal processor 113 includes, for example, a shift register, an address decoder, etc., and performs noise removal processing, correlated double sampling processing, A / D (analog / digital) conversion processing of analog image signals, etc. to generate digital pixel signals. The column signal processor 113 supplies the generated pixel signals to the signal processor 118.

[0068] The horizontal driver 114 includes a shift register, an address decoder, etc., and sequentially selects unit circuits corresponding to the pixel columns of the column signal processor 113. Such selective scanning by the horizontal driver 114 causes the pixel signals subjected to signal processing by the column signal processor 113 for the respective unit circuits to be sequentially output to the signal processor 118.

[0069] The system controller 115 includes a timing generator, etc. The timing generator generates various timing signals. The system controller 115 performs drive control of the vertical driver 112, the column signal processor 113, and the horizontal driver 114 based on the timing signals generated by the timing generator.

[0070] The signal processor 118 performs signal processing such as arithmetic processing on the pixel signals supplied from the column signal processor 113 while temporarily storing the data in the data storage section 119 as necessary, and outputs an image signal including the respective pixel signals.

[0071] While the signal processor 118 performs signal processing, the data storage section 119 temporarily holds data necessary for the signal processing.

[0072] Note that the camera device 1 of the present disclosure is not limited to Figure 1 The camera device 1A shown in the figure may have, for example, Figure 2 The camera device 1B shown or Figure 3 The photographic device 1C shown is similarly constructed. Figure 2 : is a block diagram showing a functional configuration example of an image pickup apparatus 1B as a first modification example according to the embodiment of the present disclosure. Figure 3 : is a block diagram showing a functional configuration example of an image pickup apparatus 1C as a second modification example according to the embodiment of the present disclosure.

[0073] exist Figure 2 In the image pickup device 1B of FIG. 1 , the data storage section 119 is provided between the column signal processor 113 and the horizontal driver 114 , and the pixel signal output from the column signal processor 113 is supplied to the signal processor 118 via the data storage section 119 .

[0074] exist Figure 3 In the image pickup device 1C, the data storage section 119 and the signal processor 118 are provided in parallel between the column signal processor 113 and the horizontal driver 114. In the image pickup device 1C, the column signal processor 113 performs A / D conversion of converting an analog pixel signal into a digital pixel signal based on each column of the pixel array section 111 or based on a plurality of columns of the pixel array section 111.

[0075] [Circuit structure of sensor pixel]

[0076] Next, refer to Figure 4 , to form Figure 1 The circuit configuration of the sensor pixel 121 in the pixel array section 111 will be described. Figure 4 Shows Figure 1 An example of a circuit configuration of the sensor pixel 121 is shown in FIG.

[0077] exist Figure 4 In the example, the sensor pixel 121 in the pixel array section 111 includes a photoelectric conversion section 51, a first transfer transistor (TRZ) 52, a second transfer transistor (TRY) 53, a charge holding section (MEM) 54, a third transfer transistor (TRX) 55, a fourth transfer transistor (TRG) 56, a charge-voltage conversion section (FD) 57, a discharge transistor (OFG) 58, a reset transistor (RST) 59, an amplifier transistor (AMP) 60 and a selection transistor (SEL) 61.

[0078] In addition, in this example, TRZ 52, TRY 53, TRZ 55, TRG 56, OFG 58, RST 59, AMP 60 and SEL61 are all N-type MOS transistors. Drive signals S52, S53, S55, S56, S58, S59 and S61 are respectively supplied to the gate electrodes of TRZ 52, TRY 53, TRZ 55, TRG 56, OFG 58, RST 59 and SEL 61. Drive signals S52, S53, S55, S56, S58, S59 and S61 are all pulse signals, in which the high level state is the active state (conduction state) and the low level state is the inactive state (cut-off state). Note that in the following, sometimes making the drive signal enter the active state is referred to as the conduction drive signal, and sometimes making the drive signal enter the inactive state is referred to as the cut-off drive signal.

[0079] The photoelectric conversion section 51 is a photoelectric conversion element including a PN junction photodiode, for example. The photoelectric conversion section 51 receives light from a subject, generates electric charge corresponding to the amount of received light by photoelectric conversion, and accumulates the generated electric charge.

[0080] The TRZ 52 is connected between the photoelectric conversion portion 51 and the TRY 53 , and transfers the charges accumulated in the photoelectric conversion portion 51 to the MEM 54 based on a drive signal S52 applied to a gate electrode of the TRZ 52 .

[0081] The TRY 53 controls the potential of the MEM 54 based on the drive signal S53 applied to the gate electrode of the TRY 53. For example, when the drive signal S53 is turned on and the TRY 53 is turned on, the potential of the MEM 54 becomes deeper. In addition, when the drive signal S53 is turned off and the TRY 53 is turned off, the potential of the MEM 54 becomes shallow. When the drive signal S52 and the drive signal S53 are turned on and the TRZ 52 and the TRY 53 are turned on, the charge accumulated in the photoelectric conversion unit 51 is transferred to the MEM 54 via the TRZ 52 and the TRY 53.

[0082] The MEM 54 is a region that temporarily holds the charges accumulated in the photoelectric conversion portion 51 to implement a global shutter function.

[0083] The TRX 55 prevents the charge from flowing back when the charge is transferred from the photoelectric conversion portion 51 to the MEM 54. For example, by turning off the TRY 53 and then turning off the TRX 55, the charge can be prevented from flowing back.

[0084] TRG 56 is connected between TRX 55 and FD 57, and transfers the charge held in MEM 54 to FD 57 based on the drive signal S56 applied to the gate electrode of TRG 56. For example, when the drive signal S53 is turned off, TRY 53 is turned off, the drive signal S55 and the drive signal S56 are turned on, and TRX 55 and TRG 56 are turned on, the charge held in MEM 54 is transferred to FD 57 via TRX 55 and TRG 56.

[0085] FD 57 is a floating diffusion region that converts charges transferred from MEM 54 via TRG 56 into an electric signal (eg, a voltage signal) and outputs the electric signal. RST 59 is connected to FD 57 , and a vertical signal line VSL is connected to FD 57 via AMP 60 and SEL 61 .

[0086] The drain of the OFG 58 is connected to the power supply VDD and the source is connected to the wiring between the TRZ 52 and the TRY 53. The OFG 58 initializes the photoelectric conversion unit 51 based on the drive signal OFG applied to the gate electrode of the OFG 58, in other words, resets the photoelectric conversion unit 51. For example, when the drive signal S52 and the drive signal S58 are turned on and the TRZ 52 and the OFG 58 are turned on, the potential of the photoelectric conversion unit 51 is reset to the voltage level of the power supply VDD. That is, the photoelectric conversion unit 51 is initialized.

[0087] In addition, the OFG 58 forms an overflow path between the TRZ 52 and the power supply VDD, and discharges the charge overflowing from the photoelectric conversion section 51 to the power supply VDD.

[0088] The drain of the RST 59 is connected to the power supply VDD and the source is connected to the FD 57. In other words, the RST 59 initializes each region from the MEM 54 to the FD 57 based on the drive signal S59 applied to the gate electrode of the RST 59. For example, when the drive signal S55, the drive signal S56, and the drive signal S59 are turned on and the TRX 55, the TRG 56, and the RST 59 are turned on, the potential of each of the MEM 54 and the FD 57 is reset to the voltage level of the power supply VDD. That is, each of the MEM 54 and the FD 57 is initialized.

[0089] The gate electrode of the AMP 60 is connected to the FD 57 and the drain is connected to the power supply VDD, and serves as an input section of a source follower circuit that reads the charge obtained by the photoelectric conversion performed by the photoelectric conversion section 51. That is, the source of the AMP 60 connected to the vertical signal line VSL via the SEL 61 causes the AMP 60 to form a source follower circuit together with a constant current source connected to one end of the vertical signal line VSL.

[0090] The SEL 61 is connected between the source of the AMP 60 and the vertical signal line VSL, and the gate electrode of the SEL 61 receives the drive signal S61 as a selection signal. When the drive signal S61 is turned on, the SEL 61 enters an on state, and the sensor pixel 121 provided with the SEL 61 becomes a selected state. When the sensor pixel 121 is in the selected state, the column signal processor 113 reads the pixel signal output from the AMP 60 via the vertical signal line VSL.

[0091] In addition, in the pixel array section 111, for example, a plurality of pixel drive lines 122 are wired for each pixel row. Further, drive signals S52, S53, S55, S56, S58, S59, and S61 are supplied from the vertical driver 112 to the selected sensor pixels 121 via the plurality of pixel drive lines 122.

[0092] Notice, Figure 4 The illustrated pixel circuit is an example of a pixel circuit that can be used for the pixel array section 111 , and a pixel circuit having any other configuration may also be used.

[0093] [Sensor pixel structure]

[0094] Figure 5 An example of a planar configuration of the pixel array section 111 of the image pickup device 1 is schematically shown. Figure 6 Schematically shows the Figure 5 An example of a cross-sectional configuration of the imaging device 1 corresponding to the line II shown. Here, the plane in which the semiconductor substrate 11 extends is referred to as an XY plane, and the thickness direction of the semiconductor substrate 11 is referred to as a Z-axis direction. In addition, the row direction is referred to as an X-axis direction, and the column direction is referred to as a Y-axis direction.

[0095] Note that the symbols "p" and "n" in the figure represent a p-type semiconductor region and an n-type semiconductor region, respectively. In addition, the "+" or "-" after the symbol "p" represents the impurity concentration of the p-type semiconductor region. Similarly, the "+" or "-" after the symbol "n" represents the impurity concentration of the n-type semiconductor region. Here, more "+"s represent higher impurity concentrations, and more "-"s represent lower impurity concentrations. The same applies to the drawings described below.

[0096] The image pickup device 1 includes a semiconductor substrate 11, a photoelectric conversion portion 51 embedded in the semiconductor substrate 11, a TRZ 52, a TRY 53, a MEM 54, a TRZ 55, a TRG 56, an FD 57, an OFG 58, a light shielding portion 12, a gate insulating layer 13, a fixed charge layer 15, a color filter layer 16, and a microlens 17. Note that in the image pickup device 1, the back surface 11B is used as its light receiving surface.

[0097] The semiconductor substrate 11 includes, for example, a Si{111} substrate. The Si{111} substrate is a substrate or a band region including a silicon single crystal having a (111) crystal orientation and having a crystal plane represented by {111} in Miller index notation. It also includes a substrate or a band region having an orientation shifted by several degrees (for example, from <111> Plane facing closest <110> The {111} plane is any one of the (111) plane, (-111) plane, (1-11) plane, (11-1) plane, (-1-11) plane, (-11-1) plane, (1-1-1) plane, and (-1-1-1) plane, which are crystal planes with the same symmetry. Here, the bar symbol used to represent the negative direction index of the Miller index is replaced with a minus symbol. In addition, <110> The direction may be any one of the

[110] direction,

[101] direction,

[011] direction, [-110] direction, [1-10] direction, [-101] direction, [10-1] direction, [0-11] direction, [01-1] direction, [-1-10] direction, [-10-1] direction, and [0-1-1] direction, which are crystal plane directions with the same symmetry, and may be interchangeably replaced with any one of them. The direction is parallel to the plane) and is etched. The semiconductor substrate 11 includes a back side 11B and a front side 11A on the opposite side of the back side 11B, and the back side 11B is a light receiving surface that receives light from the subject through the microlens 17 and the color filter layer 16.

[0098] The photoelectric converter 51 is a so-called embedded photodiode (PD) in which an n-type impurity region (p+) is formed inside a p-type impurity region (p+) formed in the semiconductor substrate 11. Each photoelectric converter 51 generates charges corresponding to the amount of received light and accumulates the generated charges to a certain amount.

[0099] The light shielding portion 12 is a member for preventing light from being incident on the MEM 54, and is provided to surround the MEM 54. Specifically, the light shielding portion 12 includes, for example, a horizontal light shielding portion 12H and a vertical light shielding portion 12V. The horizontal light shielding portion 12H is provided on the side of the photoelectric conversion portion 51 opposite to the back surface 11B of the semiconductor substrate 11, and extends along a horizontal plane (XY plane). The vertical light shielding portion 12V extends along the XZ plane and the YZ plane to be orthogonal to the horizontal light shielding portion 12H.

[0100] The vertical light shielding portion 12V is a wall member that is provided in every other column in a plan view. The vertical light shielding portion 12V is provided at a boundary portion between sensor pixels 121 that are adjacent to each other in the X-axis direction and the Y-axis direction, and extends in the X-axis direction and the Y-axis direction in a plan view. Specifically, Figure 5As shown, the vertical light shielding portion 12V includes a row light shielding portion 12V1 and a column light shielding portion 12V2 formed along the two sides adjacent to each other of the sensor pixel 121 having a rectangular shape. In the entire pixel array portion 111, the vertical light shielding portion 12V is provided for every other column, and is formed to be offset in each row in a direction parallel to the column by an amount corresponding to one sensor pixel 121. In other words, the vertical light shielding portion 12V is formed on each of the two sides adjacent to each other of the sensor pixel having a substantially square shape, and is provided for each sensor pixel 121 positioned in every other column and in a 45-degree inclined direction. That is, the vertical light shielding portion 12V is directed toward the Si{111} substrate. <110> The direction is set in a zigzag shape.

[0101] Note that the above-mentioned "45-degree tilt direction" allows for slight deviations in consideration of manufacturing errors. The same applies to the following description.

[0102] like Figure 6 As shown in FIG. 1 , the horizontal light shielding portion 12H is located between the photoelectric conversion portion 51 and the MEM 54 in the Z-axis direction. Figure 5 As shown in FIG. 1 , the horizontal light shielding portion 12H is provided on the entire XY plane except the opening 12K in the pixel array portion 111. Specifically, in a plan view, the horizontal light shielding portion 12H is provided on the XY plane surrounded by the row light shielding portion 12V1 and the column light shielding portion 12V2, and has an end portion 12X at a position connecting an end portion of the row light shielding portion 12V1 and an end portion of the column light shielding portion 12V2. In the entire pixel array portion 111, as shown in FIG. Figure 5 In the plan view shown, the horizontal light shielding portion 12H is disposed on an XY plane surrounded by the row light shielding portion 12V1 and the column light shielding portion 12V2 disposed for each sensor pixel 121 positioned in a 45-degree tilt direction in every other column, and the horizontal light shielding portion 12H has an end portion 12X at or near a position connecting one and the other of the intersections of the row light shielding portion 12V1 and the column light shielding portion 12V2 disposed for each sensor pixel 121 positioned in a 45-degree tilt direction in every other column. That is, the end portion 12X of the horizontal light shielding portion 12H is substantially parallel to the Si{111} substrate. <110> direction.

[0103] This causes the light incident from the back surface 11B and transmitted through the photoelectric conversion section 51 without being absorbed by the photoelectric conversion section 51 to be reflected at the horizontal light shielding section 12H of the light shielding section 12, and to be incident again on the photoelectric conversion section 51. That is, the horizontal light shielding section 12H of the light shielding section 12 functions as a reflector, and serves to suppress the generation of noise due to the light transmitted through the photoelectric conversion section 51 being incident on the MEM 54. In addition, the vertical light shielding section 12V of the light shielding section 12 serves to prevent the generation of noise such as color mixing due to the leakage light from the adjacent sensor pixel 121 being incident on the photoelectric conversion section 51.

[0104] For example, a Si{111} substrate can be used as the semiconductor substrate 11. <110> The trench 11H having a sawtooth shape is formed in the direction of the semiconductor substrate 11. <110> The horizontal light shielding portion 12H is formed by wet etching with an etching solution that etches in the horizontal direction. Examples of such an etching solution include an alkaline aqueous solution. Fig. 7A and Figure 7B Each schematically shows a process of forming the horizontal light shielding portion 12H. Fig. 7A As shown, when <110> When the trench 11H having a sawtooth shape is formed in the direction and alkaline etching is performed, etching is started from the corner where the crystal plane is destroyed. Etching is performed until the corner no longer appears, and Figure 7B As shown, a space having an end (end 12X) at a position connecting vertices of the groove 11H having a sawtooth shape is formed.

[0105] The light-shielding portion 12 has a two-layer structure including an inner layer portion 12A and an outer layer portion 12B. The outer layer portion 12B surrounds the inner layer portion 12A. The inner layer portion 12A includes, for example, a material including at least one of a single metal substance, a metal alloy, a metal nitride, or a metal silicide having a light-shielding property. More specifically, examples of materials included in the inner layer portion 12A include: Al (aluminum), Cu (copper), Co (cobalt), W (tungsten), Ti (titanium), Ta (tantalum), Ni (nickel), Mo (molybdenum), Cr (chromium), Ir (iridium), platinum-iridium, TiN (titanium nitride), tungsten silicon compounds, and the like. Among them, Al (aluminum) is the most preferred optical material to be included. Note that the inner layer portion 12A may include graphite, organic materials, and the like. The outer layer portion 12B includes, for example, SiO x The outer layer portion 12B ensures electrical insulation between the inner layer portion 12A and the semiconductor substrate 11 .

[0106] The gate electrode of each of TRZ 52, TRY 53, TRX 55, TRG 56 and OFG 58 is arranged on the front side 11A of the semiconductor substrate 11, and the gate insulating layer 13 is interposed therebetween. The MEM 54 as an n-type semiconductor region (n+) is embedded in the semiconductor substrate 11 and is arranged between the front side 11A and the horizontal light shielding portion 12H. FD 57, GND 62 (well contact) and VDD are arranged on the front side 11A of the semiconductor substrate 11. FD 57 includes an n-type semiconductor region. GND 62 is a p-type semiconductor region (p++) connected to the ground (GND). VDD is an n-type semiconductor region connected to the power supply VDD.

[0107] The TRZ 52 is a so-called vertical transistor. The TRZ 52 extends downward in the Z-axis direction from the front surface 11A of the semiconductor substrate 11 as a gate electrode, and reaches the photoelectric conversion unit 51 through the opening 12K and the n-type semiconductor region (n-) 64. The gate electrode of the TRZ 52 is provided in the Si remaining region 22 (region corresponding to the opening 12K) except for the region occupied by the horizontal light shielding portion 12H in the horizontal plane. The TRZ 52 allows the charge moving from the photoelectric conversion unit 51 toward the MEM 54 to pass.

[0108] Each of the FD 57, the GND 62, and the VDD is provided at a boundary position between two adjacent sensor pixels 121 adjacent to each other, and is shared by the two sensor pixels 121. Specifically, the FD 57 is provided at a boundary position between two sensor pixels 121 adjacent to each other in the X-axis direction, and is shared by the two sensor pixels 121 adjacent to each other in the X-axis direction. Two sensor pixels 121 adjacent to each other in the X-axis direction and sharing the FD 57 are referred to as an FD sharing unit. Each of the GND 62 and the VDD is provided at a boundary position between two sensor pixels 121 adjacent to each other in the Y-axis direction, and is shared by the two sensor pixels 121 adjacent to each other in the Y-axis direction. This reduces the area of ​​the impurity diffusion region of each pixel, and enables the area of ​​the MEM 54 to be increased.

[0109] The image pickup device 1 further includes a fixed charge layer 15 , a color filter layer 16 , and a microlens 17 on the back surface 11B of the semiconductor substrate 11 .

[0110] The fixed charge layer 15 has negative fixed charges to suppress the generation of dark current caused by the interface state of the back surface 11B serving as the light receiving surface of the semiconductor substrate 11. The electric field caused by the fixed charge layer 15 causes a hole accumulation layer to be formed near the back surface 11B of the semiconductor substrate 11. The hole accumulation layer suppresses the generation of electrons from the back surface 11B.

[0111] The color filter layer 16 is provided, for example, in contact with the fixed charge layer 15. The color filter layer 16 includes, for example, a plurality of color filters 16R, 16G, and 16B that selectively transmit red light (R), green light (G), and blue light (B), respectively. Figure 8 As shown in FIG. 5 , color filters of the same color are set for two corresponding sensor pixels 121 (FD sharing unit) sharing the FD 57. In addition, for example, Figure 8As shown, color filters 16R, 16G, and 16B are arranged so that color filter 16R and color filter 16B are arranged for two corresponding FD shared units arranged side by side in the X-axis direction, and color filter 16G is arranged for two corresponding FD shared units arranged side by side in the Y-axis direction, and the aforementioned two FD shared units are between the two FD shared units described later. This makes it easier to perform arrangement transformation processing by arranging the center of gravity of the signal in Bayer when pixels are added. In addition, pixels of the same color are arranged obliquely throughout the pixel array section 111. This makes it possible to prevent the vertical resolution reduction rate and the horizontal resolution reduction rate from being ×1√2 when pixels are added. This makes it possible to prevent the resolution from being significantly reduced in only one of the two directions.

[0112] The microlens 17 is located on the side of the color filter layer 16 opposite to the fixed charge layer 15 , and is provided in contact with the color filter layer 16 .

[0113] [Function and Effect]

[0114] As described above, the image pickup device 1 of the present embodiment is provided with the light shielding portion 12 including the vertical light shielding portion 12V and the horizontal light shielding portion 12H provided on both sides adjacent to each other of the sensor pixel 121 having a substantially square shape. The vertical light shielding portion 12V is provided for each sensor pixel 121 positioned in a direction inclined at 45 degrees in every other column. The end portion 12X of the horizontal light shielding portion 12H is located at or near a position connecting one and the other of the intersections of the row light shielding portion 12V1 and the column light shielding portion 12V2 provided for each sensor pixel 121 positioned in a direction inclined at 45 degrees in every other column. Therefore, the light shielding performance and the charge transfer efficiency of the MEM 54 can be improved.

[0115] In the imaging device 1 of the present embodiment, the vertical light shielding portion 12V is zigzag shaped toward the Si{111} substrate. <110> The end 12X of the horizontal light shielding portion 12H is approximately aligned with the Si(111) substrate. <110> direction, and is formed to be inclined at 45° relative to the expansion direction of the pixel array section 111. <110> A sawtooth-shaped groove 11H, which will become a vertical light shielding portion 12V, is formed in the horizontal direction, and an etching solution such as an alkaline aqueous solution is used to perform crystal anisotropic etching, and the horizontal light shielding portion 12H can be easily formed without providing an etching stopper film or the like. Therefore, the vertical light shielding portion 12V has high dimensional accuracy. Therefore, the layout efficiency can be improved. This effect is more significant when the pixel is small.

[0116] Next, the second to fourth embodiments of the present disclosure and Modifications 1 to 3 will be described. Note that components corresponding to those of the image pickup device 1 of the first embodiment described above are denoted by the same reference numerals, and description thereof will be omitted.

[0117] [2. Modification 1]

[0118] Fig. 9 An example of a planar configuration of an image pickup device (image pickup device 1A) according to Modification 1 of the present disclosure is schematically shown.

[0119] The above-described first embodiment has discussed an example in which the FD 57 is provided at a boundary position between two sensor pixels 121 adjacent to each other in the X-axis direction, and the GND 62 and the VDD are provided between two sensor pixels 121 adjacent to each other in the Y-axis direction. In contrast, in the image pickup device 1A of the present modification, the GND 62 is provided for each sensor pixel 121, and the VDD is provided at a boundary position between two sensor pixels 121 adjacent to each other in the Y-axis direction. Except for these points, the image pickup device 1A of the present modification has a configuration substantially similar to that of the image pickup device 1 of the above-described first embodiment.

[0120] As described above, in the image pickup device 1A of the present modification, the layout of the sensor pixels 121 adjacent to each other in one of the X-axis direction and the Y-axis direction is point-symmetrical with respect to the centers of the two adjacent sensor pixels 121. In addition to achieving the effects of the first embodiment described above, this eliminates the structural differences between the sensor pixels 121 and can also reduce differences in dark signals and the like between pixels.

[0121] [3. Second embodiment]

[0122] Fig.10 An example of a planar configuration of an image pickup device (image pickup device 2 ) according to a second embodiment of the present disclosure is schematically shown. Fig.11 Schematically shows the Fig.10 An example of a cross-sectional structure corresponding to the II-II line shown.

[0123] The above-mentioned first embodiment has described an example in which the light shielding portion 12 including the horizontal light shielding portion 12H and the vertical light shielding portion 12V is provided as a member for preventing light from being incident on the MEM 54. The horizontal light shielding portion 12H extends along the horizontal plane (XY plane) between the photoelectric conversion portion 51 and the MEM 54. The vertical light shielding portion 12V extends along the XZ plane and the YZ plane, and is orthogonal to the horizontal light shielding portion 12H from the front surface 11A side of the semiconductor substrate 11. In contrast, the camera device 2 of the present embodiment is further provided with a light shielding portion 18 including a horizontal light shielding portion 18H and a vertical light shielding portion 18V. The horizontal light shielding portion 18H extends in a region corresponding to the opening 12K. The vertical light shielding portion 18V extends along the XZ plane and the YZ plane, and is orthogonal to the horizontal light shielding portion 18K from the back surface 11B side of the semiconductor substrate 11. Except for these points, the camera device 2 has a configuration substantially similar to the camera device 1 of the above-mentioned first embodiment.

[0124] The vertical light shielding portion 18V is a wall member provided in every other column in a plan view. The vertical light shielding portion 18V is provided at a boundary portion between sensor pixels 181 adjacent to each other in the X-axis direction and the Y-axis direction, and extends in the X-axis direction and the Y-axis direction in a plan view. Specifically, the vertical light shielding portion 18V includes a wall member provided in a direction such as Fig.10 The row light shielding portion 18V1 and the column light shielding portion 18V2 are formed on both sides of the sensor pixel 181 having a rectangular shape that is adjacent to each other and where the vertical light shielding portion 12V is not provided. In the entire pixel array portion 111, like the vertical light shielding portion 12V, the vertical light shielding portion 18V is provided every other column, and is formed to be offset in each row in a direction parallel to the column by an amount corresponding to one sensor pixel 181. In other words, the vertical light shielding portion 18V is formed on each of the two sides of the sensor pixel 181 having a substantially square shape that is adjacent to each other, and is provided for each sensor pixel 181 that is positioned in every other column and in a 45-degree inclined direction. That is, the vertical light shielding portion 18V is directed toward the Si{111} substrate. <110> The direction is set in a zigzag pattern.

[0125] like Fig.11 As shown in FIG. 1 , the horizontal light shielding portion 18H is disposed closer to the front surface 11A of the semiconductor substrate 11 than the horizontal light shielding portion 12H. The horizontal light shielding portion 18H is disposed on the entire XY plane of the pixel array portion 111 to divide a portion of the photoelectric conversion portion 51 in the Z-axis direction. Specifically, in a plan view, the horizontal light shielding portion 18H is disposed in the XY plane surrounded by the row light shielding portion 18V1 and the column light shielding portion 18V2, and has an end portion 18X at a position connecting an end portion of the row light shielding portion 18V1 and an end portion of the column light shielding portion 18V2. In the entire pixel array portion 111, as shown in FIG. Fig.10 In the plan view shown in the figure, the horizontal light shielding portion 18H is provided on the XY plane surrounded by the row light shielding portion 18V1 and the column light shielding portion 18V2 provided for each sensor pixel 181 positioned in a direction inclined at 45 degrees for every other column, and has an end portion 18X at or near a position connecting one and the other of the intersections of the row light shielding portion 18V1 and the column light shielding portion 18V2, which are provided for each sensor pixel 181 positioned in a direction inclined at 45 degrees for every other column. That is, the end portion 18X of the horizontal light shielding portion 18H is aligned with the Si (111) substrate. <110> The directions are roughly parallel.

[0126] As with the horizontal light shielding portion 12H, for example, a Si{111} substrate can be used as the semiconductor substrate 11. <110> The trench 11H having a sawtooth shape is formed in the direction of the semiconductor substrate 11. <110> The horizontal light shielding portion 18H is formed by wet etching with an etching solution that etches in the horizontal direction. Examples of such an etching solution include an alkaline aqueous solution.

[0127] The light-shielding portion 18 has a two-layer structure including an inner layer portion 18A and an outer layer portion 18B surrounding the inner layer portion 18A. The inner layer portion 18A includes, for example, a material including at least one of a single metal substance, a metal alloy, a metal nitride, or a metal silicide having a light-shielding property. More specifically, examples of materials included in the inner layer portion 18A include Al (aluminum), Cu (copper), Co (cobalt), W (tungsten), Ti (titanium), Ta (tantalum), Ni (nickel), Mo (molybdenum), Cr (chromium), Ir (iridium), platinum-iridium, TiN (titanium nitride), tungsten silicon compounds, and the like. Among them, Al (aluminum) is the most preferred optical material to be included. Note that the inner layer portion 18A may include graphite, an organic material, and the like. For example, the outer layer portion 18B includes materials such as SiO x The outer layer portion 18B ensures electrical insulation between the inner layer portion 18A and the semiconductor substrate 11 .

[0128] As described above, the image pickup device 2 of the present embodiment is provided with the light shielding portion 18 in addition to the light shielding portion 12. The light shielding portion 18 includes a horizontal light shielding portion 18H and a vertical light shielding portion 18V. The horizontal light shielding portion 18H extends in a region corresponding to the opening 12K. The vertical light shielding portion 18V extends along the XZ plane and the YZ plane, and is orthogonal to the horizontal light shielding portion 18K from the back surface 11B side of the semiconductor substrate 11. Therefore, it is possible to further prevent the light transmitted through the photoelectric conversion portion 51 from being incident on the MEM 54, and further improve the light shielding performance of the MEM 54.

[0129] [4. Third Implementation Plan]

[0130] Fig.12 An example of a planar configuration of an image pickup device (image pickup device 3 ) according to a third embodiment of the present disclosure is schematically shown. Fig.13 Schematically shows the Fig.12 An example of a cross-sectional configuration corresponding to line III-III is shown. Fig.14 Schematically shows the Fig.12 An example of a cross-sectional configuration corresponding to line IV-IV is shown.

[0131] The above second embodiment has described an example in which the light shielding portion 18 is provided from the back surface 11B side of the semiconductor substrate. Fig.12As shown in FIG. 1 , the image pickup device 3 of the present embodiment has a layout in which the vertical light shielding portion 12V of the light shielding portion 12 and the vertical light shielding portion 18V of the light shielding portion 18 avoid the four corners of the nearest sensor pixel 121. In addition, the vertical light shielding portion 18V of the light shielding portion 18 is provided together with the vertical light shielding portion 12V of the light shielding portion 12 from the front surface 11A side of the semiconductor substrate 11. Except for these points, the image pickup device 3 has a configuration substantially similar to that of the image pickup device 1 of the above-described second embodiment.

[0132] As described above, in the image pickup device 3 of the present embodiment, the vertical light shielding portion 18V of the light shielding portion 18 is provided together with the vertical light shielding portion 12V of the light shielding portion 12 from the front surface 11A side of the semiconductor substrate 11. Therefore, unlike the case where the vertical light shielding portion 18V and the groove to be the horizontal light shielding portion 18H are formed from the back surface 11B of the above-mentioned second embodiment, it is possible to allow formation by a front-end process. This enables recovery from damage to the silicon single crystal of the semiconductor substrate 11 by heat, and enables improvement of white spot defects.

[0133] Note that in the image pickup device 3, the FD 57 is provided for each sensor pixel 121 along the vertical light shielding portion 18V extending along the boundary portion between two sensor pixels 121 adjacent to each other in the X-axis direction of the light shielding portion 18. The FD 57 provided along the vertical light shielding portion 18V is connectable to two sensor pixels 121 adjacent to each other in the X-axis direction by the shortest wiring. Therefore, a decrease in charge-voltage conversion efficiency can be sufficiently suppressed.

[0134] [5. Modification 2]

[0135] Fig.15 An example of a cross-sectional configuration of an image pickup device (image pickup device 3A) according to Modification 2 of the present disclosure is schematically shown.

[0136] For example, the vertical light shielding portion 12V of the light shielding portion 12 and the vertical light shielding portion 18V of the light shielding portion 18 of the third embodiment described above may be provided to penetrate between the front surface 11A and the back surface 11B of the semiconductor substrate 11. By forming a space extending in the XY plane as the horizontal light shielding portions 12H and 18H and then further continuing the trench digging, the vertical light shielding portions 12V and 18V provided to penetrate between the front surface 11A and the back surface 11B of the semiconductor substrate 11 may be formed.

[0137] As described above, in the image pickup device 3 of the present modification, the vertical light shielding portion 12V of the light shielding portion 12 and the vertical light shielding portion 18V of the light shielding portion 18 are provided so as to penetrate between the front surface 11A and the back surface 11B of the semiconductor substrate 11. Therefore, color mixing or the like caused by leakage light from the adjacent sensor pixel 121 being incident on the photoelectric conversion portion 51 can be suppressed.

[0138] [6. Fourth Implementation Plan]

[0139] Fig.16 An example of a planar configuration of an image pickup device (image pickup device 4A) according to a fourth embodiment of the present disclosure is schematically shown. Fig.17 An example of a planar configuration of an image pickup device (image pickup device 4B) according to a fourth embodiment of the present disclosure is schematically shown.

[0140] like Fig.16 As shown in the figure, the vertical light shielding portion 12V is formed on both sides adjacent to each other of the sensor pixel 121 having a substantially square shape and has a sawtooth shape and is provided for each sensor pixel 121 positioned in a 45-degree inclined direction in every other column, and the vertical light shielding portion 12V may protrude in the X-axis direction or the Y-axis direction at each intersection of the row light shielding portion 12V1 and the column light shielding portion 12V2. By providing such a protruding portion 12Y, the end portion 12X of the horizontal light shielding portion 12H may be formed at or near a position connecting one and the other of the front ends of the protruding portion 12Y. That is, the formation area of ​​the horizontal light shielding portion 12H is increased, and thus the light shielding performance of the MEM 54 can be improved.

[0141] In addition, in the case where the light shielding portions 12 and 18 are provided from the front surface 11A of the semiconductor substrate 11 of the third embodiment as described above, as Fig.17 As shown, the protrusions 12Y and 18Y are provided so as to protrude in the 45-degree oblique direction, so that the vertical light shielding portions 12V and 18V are arranged in a staggered manner at positions where the vertical light shielding portions 12V and 18V are closest to each other. This makes the horizontal light shielding portion 12H and the horizontal light shielding portion 18H overlap each other in a plan view by an amount corresponding to the protrusions 12Y and 18Y, thereby being able to further improve the light shielding performance of the MEM 54.

[0142] In addition, for example, Fig.18 In the camera device 4C shown in FIG. Fig.17 Between the protrusions 12Y and 18Y protruding in the 45-degree oblique direction in the staggered manner shown, a GND 62 to which a fixed potential is applied can be provided. This improves area efficiency. In addition, this allows the vertical light shielding portions 12V and 18V and their protrusions 12Y and 18Y to function as element isolators, which results in relaxation of the electric field.

[0143] As described above, in each of the image pickup devices 4A, 4B, and 4C of the present embodiment, in the case of the protrusion 12Y protruding in the X-axis direction or the Y-axis direction provided at the intersection of the row light shielding portion 12V1 and the column light shielding portion 12V2, or in the case of providing the light shielding portions 12 and 18 from the front surface 11A of the semiconductor substrate 11, the protrusions 12Y and 18Y protruding in the 45-degree oblique direction are provided so that the vertical light shielding portions 12V and 18V are arranged in a staggered manner at the positions where the vertical light shielding portions 12V and 18V are closest to each other. This increases the formation area of ​​the horizontal light shielding portions 12H and 18H. Therefore, the light shielding performance of the MEM 54 can be further improved compared with the above-mentioned first embodiment and the like.

[0144] [7. Modification 3]

[0145] Fig.19 An example of a planar configuration of an image pickup device according to Modification 3 of the present disclosure is schematically shown.

[0146] The above-mentioned first embodiment and the like have described an example in which the row light shielding portion 12V1 and the column light shielding portion 12V2 are continuous with each other; however, this is not restrictive. Fig.19 As shown, the row light shielding portion 12V1 and the column light shielding portion 12V2 can be separated from each other. This reduces stress caused by the material difference between the semiconductor substrate 11 and the light shielding portion 12, and can suppress the occurrence of crystal defects, cracks, etc. and wafer warpage, etc.

[0147] like Fig.19 and Fig. 20 As shown, in the case where the row light shielding portion 12V1 and the column light shielding portion 12V2 are separated from each other, the spacing s between the row light shielding portion 12V1 and the column light shielding portion 12V2 and the protrusion amount d of another light shielding portion (e.g., the row light shielding portion 12V1) adjacent to one light shielding portion (e.g., the column light shielding portion 12V2) have a relationship of s≤d. This allows the space between the groove 11H1 of the row light shielding portion 12V1 and the groove 11H2 of the column light shielding portion 12V2, which are separated from each other, to be covered by the horizontal light shielding portion 12H. Therefore, sufficient light shielding performance can be achieved.

[0148] [8. Application examples]

[0149] [Application Example 1]

[0150] For example, the above-described imaging device 1 is applicable to any of various electronic devices, for example. Examples of such electronic devices include: an imaging system such as a digital camera or a digital video camera; a mobile phone having an imaging function; and any other device having an imaging function.

[0151] Fig.21 is a block diagram showing a configuration example of the electronic device 1000 .

[0152] like Fig.21 As shown, the electronic device 1000 includes an optical system 1001, an image pickup device 1, and a DSP (digital signal processor) 1002. The electronic device 1000 has a configuration in which the DSP 1002, a memory 1003, a display device 1004, a recording device 1005, an operating system 1006, and a power supply system 1007 are connected to each other via a bus 1008. The electronic device 1000 is configured to capture still images and moving images.

[0153] The optical system 1001 includes one or more lenses. The optical system 1001 receives incident light (image light) from a subject and forms an image on an imaging plane of the imaging device 1.

[0154] The above-described imaging device 1, imaging device 1A, etc. are applied to the imaging device 1. The imaging device 1 converts the amount of incident light for forming an image on an imaging surface through the optical system 1001 into an electrical signal in units of pixels, and supplies the electrical signal to the DSP 1002 as a pixel signal.

[0155] The DSP 1002 performs various types of signal processing on the signal from the camera 1, acquires an image, and temporarily stores the data of the image in the memory 1003. The data of the image stored in the memory 1003 is recorded in the recording device 1005, for example, or supplied to the display device 1004 so that the image is displayed. In addition, the operating system 1006 receives various operations performed by the user, and supplies operation signals to the various blocks of the electronic device 1000. The power supply system 1007 supplies power required to drive the various blocks of the electronic device 1000.

[0156] [Application Example 2]

[0157] For example, Fig.22A An example of the overall configuration of a light detection system 2000 including the image pickup device 1 is schematically shown. Fig. 22B An example of a circuit configuration of a light detection system 2000 is shown. The light detection system 2000 includes a light emitting device 2001 as a light source unit that emits infrared light L2 and a photodetection device 2002 as a light receiving unit. As the light detection device 2002, for example, the above-described image pickup device 1 can be used. The light detection system 2000 may further include a system controller 2003, a light source driver 2004, a sensor controller 2005, a light source side optical system 2006, and a camera side optical system 2007.

[0158] The light detection device 2002 is configured to detect light L1 and light L2. Light L1 is ambient light from the outside and light reflected by the subject (object to be detected) 2100 ( Fig.22A). Light L2 is light emitted by the light emitting device 2001 and then reflected by the subject 2100. Light L1 is, for example, visible light, and light L2 is, for example, infrared light. Light L1 can be detected by the photoelectric conversion portion of the photodetection device 2002, and light L2 can be detected by the photoelectric conversion region of the photodetection device 2002. Image information of the subject 2100 can be obtained from light L1, and distance information between the subject 2100 and the light detection system 2000 can be obtained from light L2. The light detection system 2000 can be installed on an electronic device such as a smartphone or a moving body such as a vehicle. The light emitting device 2001 may include, for example, a semiconductor laser, a surface emitting semiconductor laser, or a vertical cavity surface emitting laser (VCSEL). As a method of detecting light L2 emitted from the light emitting device 2001 by the light detection device 2002, for example, an iTOF method can be adopted; however, this is not restrictive. In the iTOF method, the photoelectric conversion unit is configured to measure the distance to the subject 2100 based on, for example, the time of flight (time of flight; TOF). For example, a structured light method or a stereoscopic vision method may also be adopted as a method for the light detection device 2002 to detect the light L2 emitted from the light emitting device 2001. For example, in the structured light method, the distance between the light detection system 2000 and the subject 2100 can be measured by projecting light having a predetermined pattern onto the subject 2100 and analyzing the degree of distortion of the projected pattern. In addition, in the stereoscopic vision method, the distance between the light detection system 2000 and the subject can be measured by, for example, using two or more cameras and acquiring two or more images of the subject 2100 taken from two or more different perspectives from each other. It should be noted that the light emitting device 2001 and the photoelectric detection device 2002 can be synchronously controlled by the system controller 2003.

[0159] [9. Practical application examples]

[0160] [Examples of actual applications of endoscopic surgery systems]

[0161] The technology disclosed herein (the present technology) is applicable to various products. For example, the technology disclosed herein can be applied to an endoscopic surgery system.

[0162] Fig.23 : is a view showing a schematic configuration example of an endoscopic surgery system to which the technology according to an embodiment of the present disclosure (the present technology) can be applied.

[0163] exist Fig.23, a state is shown in which a surgeon (doctor) 11131 is using an endoscopic surgery system 11000 to perform surgery on a patient 11132 on a bed 11133. As shown in the figure, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 (e.g., a pneumoperitoneum tube 11111 and an energy device 11112), a support arm device 11120 (supporting the endoscope 11100 thereon), and a cart 11200, on which various devices used for endoscopic surgery are loaded.

[0164] The endoscope 11100 includes a lens barrel 11101 and a camera 11102 connected to the proximal end of the lens barrel 11101, and the lens barrel 11101 has a region of a predetermined length from its distal end for insertion into a body cavity of a patient 11132. In the illustrated example, the endoscope 11100 is illustrated as a rigid endoscope including the lens barrel 11101 as having a hard type. However, the endoscope 11100 may also be a flexible endoscope including the lens barrel 11101 as having flexibility.

[0165] The lens barrel 11101 has an opening at its distal end for mounting an objective lens. The light source device 11203 is connected to the endoscope 11100 so that the light generated by the light source device 11203 is guided to the distal end of the lens barrel 11101 through a light guide extending inside the lens barrel 11101 and irradiated toward an observation target in the body cavity of the patient 11132 through the objective lens. It should be noted that the endoscope 11100 may be a forward-looking endoscope, or may be an oblique-looking endoscope or a side-looking endoscope.

[0166] An optical system and an imaging element are provided inside the camera head 11102, so that the reflected light (observation light) from the observation target is gathered on the imaging element by the optical system. The imaging element performs photoelectric conversion on the observation light to generate an electrical signal corresponding to the observation light, that is, an image signal corresponding to the observation image. The image signal is transmitted to the camera control unit (CCU) 11201 as raw data.

[0167] The CCU 11201 includes a central processing unit (CPU), a graphics processing unit (GPU), etc., and centrally controls the operations of the endoscope 11100 and the display device 11202. In addition, the CCU 11201 receives an image signal from the camera 11102, and performs various image processing for displaying an image based on the image signal, such as development processing (demosaic processing), on the image signal.

[0168] The display device 11202 displays an image based on an image signal that has been image-processed by the CCU 11201 under the control of the CCU 11201 .

[0169] The light source device 11203 includes a light source such as, for example, a light emitting diode (LED), and provides illumination light to the endoscope 11100 when imaging a surgical field.

[0170] The input device 11204 is an input interface for the endoscopic surgery system 11000. The user can input various types of information or instructions to the endoscopic surgery system 11000 through the input device 11204. For example, the user will input instructions through the endoscope 11100 to change image capturing conditions (type of irradiation light, magnification or focal length, etc.).

[0171] The treatment tool control device 11205 controls the driving of the energy device 11112 for cauterizing or cutting tissue, sealing blood vessels, etc. The pneumoperitoneum device 11206 delivers gas into the body cavity of the patient 11132 through the pneumoperitoneum tube 11111 to inflate the body cavity to ensure the field of view of the endoscope 11100 and to ensure the working space of the surgeon. The recorder 11207 is a device capable of recording various types of information related to the operation. The printer 11208 is a device capable of printing various types of information related to the operation in various forms (such as text, images, or graphics).

[0172] It should be noted that the light source device 11203 that provides the irradiation light when the surgical area is to be imaged to the endoscope 11100 may include a white light source such as an LED, a laser light source, or a combination thereof. In the case where the white light source includes a combination of red, green, and blue (RGB) laser light sources, since the output intensity and output timing of each color (each wavelength) can be controlled with high precision, the white balance adjustment of the captured image can be performed by the light source device 11203. In addition, in this case, if the laser beams from each RGB laser light source are irradiated onto the observation target in a time-division manner, and the drive of the imaging element of the camera 11102 is controlled synchronously with the irradiation timing, it is also possible to capture images corresponding to each of the R, G, and B colors in a time-division manner. According to this method, a color image can be obtained even if a color filter is not provided for the imaging element.

[0173] In addition, the light source device 11203 can be controlled so that the intensity of the light to be output changes at predetermined intervals. By controlling the driving of the imaging element of the camera 11102 in synchronization with the timing of the change in light intensity, images are acquired in a time-division manner and synthesized, and a high dynamic range image without underexposed shadows and overexposed highlights can be generated.

[0174] In addition, the light source device 11203 can be configured to provide light of a predetermined wavelength band that can be used for special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption in human tissue to irradiate light having a narrower wavelength band than the irradiation light (i.e., white light) during ordinary observation, narrow-band light observation is performed to image predetermined tissues (e.g., blood vessels of the surface layer of the mucosa, etc.) with high contrast. Alternatively, in special light observation, fluorescence observation for obtaining images by fluorescence generated by irradiation with excitation light can be performed. In fluorescence observation, fluorescence from body tissue can be observed by irradiating excitation light onto body tissue (autofluorescence observation) or a fluorescent image can be obtained by locally injecting an agent (such as indocyanine green (ICG)) into human tissue and irradiating excitation light corresponding to the fluorescence wavelength of the agent onto human tissue. The light source device 11203 can be configured to provide narrow-band domain light and / or excitation light suitable for the above-mentioned special light observation.

[0175] Fig.24 It shows Fig.23 A block diagram of an example of the functional configuration of the camera 11102 and the CCU 11201 shown.

[0176] The camera 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera 11102 and the CCU 11201 are connected to each other through a transmission cable 11400 for communication.

[0177] The lens unit 11401 is an optical system provided at a position connected to the lens barrel 11101. Observation light taken from the distal end of the lens barrel 11101 is guided to the camera head 11102 and introduced into the lens unit 11401. The lens unit 11401 includes a combination of a plurality of lenses including a zoom lens and a focus lens.

[0178] The number of imaging elements included in the imaging unit 11402 can be one (single-board type) or multiple (multi-board type). For example, in the case where the imaging unit 11402 is configured as a multi-board type imaging unit, image signals corresponding to each of R, G and B are generated by the imaging element, and the image signals can be synthesized to obtain a color image. The imaging unit 11402 can also be constructed to have a pair of imaging elements for respectively acquiring image signals for the right eye and for the left eye, thereby being used for three-dimensional (3D) display. If 3D display is performed, the surgeon 11131 can more accurately understand the depth of living tissue in the surgical area. It should be noted that in the case where the imaging unit 11402 is configured as a stereoscopic type imaging unit, multiple systems of lens units 11401 are provided corresponding to the respective imaging elements.

[0179] In addition, the imaging unit 11402 does not have to be provided on the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101 just behind the objective lens.

[0180] The driving unit 11403 includes an actuator, and moves the zoom lens and the focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera control unit 11405. Therefore, the magnification and focus of the image captured by the imaging unit 11402 can be appropriately adjusted.

[0181] The communication unit 11404 includes a communication device for sending and receiving various types of information to and from the CCU 11201. The communication unit 11404 sends an image signal acquired from the imaging unit 11402 to the CCU 11201 through the transmission cable 11400 as RAW data.

[0182] In addition, the communication unit 11404 receives a control signal for controlling the driving of the camera 11102 from the CCU 11201, and provides the control signal to the camera control unit 11405. The control signal includes information related to imaging conditions, such as, for example, information specifying a frame rate for capturing an image, information specifying an exposure value when capturing an image, and / or information specifying a magnification and a focus for capturing an image.

[0183] It should be noted that image capturing conditions such as frame rate, exposure value, magnification, or focus may be specified by a user or may be automatically set based on an acquired image signal by the control unit 11413 of the CCU 11201. In the latter case, an automatic exposure (AE) function, an automatic focus (AF) function, and an automatic white balance (AWB) function are incorporated in the endoscope 11100.

[0184] The camera control unit 11405 controls the driving of the camera 11102 based on the control signal received from the CCU 11201 through the communication unit 11404 .

[0185] The communication unit 11411 includes a communication device for sending various types of information to the camera 11102 and receiving various types of information from the camera 11102. Through the transmission cable 11400, the communication unit 11411 receives an image signal sent thereto from the camera 11102.

[0186] In addition, the communication unit 11411 sends a control signal for controlling the driving of the camera 11102 to the camera 11102. The image signal and the control signal can be transmitted through electrical communication, optical communication, etc.

[0187] The image processing unit 11412 performs various image processing on the image signal in the form of RAW data sent thereto from the camera 11102 .

[0188] The control unit 11413 performs various types of control related to imaging of the operation area, etc. by the endoscope 11100 and display of the captured image obtained by imaging the operation area, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102 .

[0189] In addition, the control unit 11413 controls the display device 11202 to display a captured image of the surgical area, etc., based on the image signal that has been image-processed by the image processing unit 11412. Therefore, the control unit 11413 can use various image recognition technologies to recognize various objects in the captured image. For example, the control unit 11413 can recognize surgical tools such as forceps, specific living areas, bleeding, fog when the energy device 11112 is used, etc. by detecting the shape, color, etc. of the edge of the object contained in the captured image. When the control unit 11413 controls the display device 11202 to display the captured image, the control unit 11413 can use the recognition result to display various types of surgical support information in a manner overlapping with the image of the surgical area. When the surgical support information is displayed in an overlapping manner and presented to the surgeon 11131, the burden of the surgeon 11131 can be reduced, and the surgeon 11131 can reliably perform surgery.

[0190] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 to each other is an electric signal cable capable of being used for electric signal communication, an optical fiber capable of being used for optical communication, or a composite cable capable of being used for electric communication and optical communication.

[0191] Here, although in the illustrated example, communication is performed by wired communication using the transmission cable 11400, communication between the camera 11102 and the CCU 11201 may be performed by wireless communication.

[0192] An example of an endoscopic surgery system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to the imaging unit 11402 in the above-described configuration. Applying the technology according to the present disclosure to the imaging unit 11402 improves detection accuracy.

[0193] Note that although an endoscopic surgery system has been described here as an example, the technology according to the present disclosure can be applied to any other system such as a microsurgery system, for example.

[0194] [Examples of practical applications of mobile objects]

[0195] The technology according to the present disclosure is applicable to various products. For example, the technology according to the present disclosure can be implemented as a device installed on any type of mobile body including, but not limited to, automobiles, electric vehicles, hybrid vehicles, motorcycles, bicycles, personal mobile devices, airplanes, drones, ships, robots, construction machinery, and agricultural machinery (tractors).

[0196] Fig.25 : is a block diagram showing an example of a schematic configuration of a vehicle control system as an example of a moving body control system to which the technology according to the embodiment of the present invention can be applied.

[0197] The vehicle control system 12000 includes a plurality of electronic control units connected to each other via a communication network 12001. Fig.25 In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. In addition, as a functional configuration of the integrated control unit 12050, a microcomputer 12051, a sound / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown.

[0198] The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various types of programs. For example, the drive system control unit 12010 serves as a control device for the following devices: a drive force generating device such as an internal combustion engine or a drive motor for generating a vehicle drive force, a drive force transmitting mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a vehicle braking force.

[0199] The body system control unit 12020 controls the operation of various types of devices provided on the vehicle body according to various types of programs. For example, the body system control unit 12020 is used as a control device for a keyless entry system, a smart key system, a power window device, or various lights such as a headlight, a reverse light, a brake light, a turn signal light, or a fog light. In this case, a radio wave transmitted from a mobile device that replaces the key or a signal of various types of switches may be input to the body system control unit 12020. The body system control unit 12020 receives input of these radio waves or signals, and controls a door lock device, a power window device, or a light, etc. of the vehicle.

[0200] The vehicle exterior information detection unit 12030 detects information outside the vehicle including the vehicle control system 12000. For example, the vehicle exterior information detection unit 12030 is connected to the camera unit 12031. The vehicle exterior information detection unit 12030 causes the camera unit 12031 to capture an image of the vehicle exterior and receives the captured image. Based on the received image, the vehicle exterior information detection unit 12030 can perform detection processing of objects such as people, vehicles, obstacles, signs, or characters on the road surface, or can perform detection processing of the distance to the above-mentioned objects.

[0201] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or can output the electrical signal as distance measurement information. In addition, the light received by the imaging unit 12031 can be visible light, or can be invisible light such as infrared rays.

[0202] The in-vehicle information detection unit 12040 detects information about the interior of the vehicle. The in-vehicle information detection unit 12040 is connected to, for example, a driver state detection unit 12041 that detects the driver's state. The driver state detection unit 12041 includes, for example, a camera that takes a picture of the driver. Based on the detection information input from the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or the driver's concentration level, or can determine whether the driver is dozing off.

[0203] The microcomputer 12051 can calculate the control target value of the driving force generating device, the steering mechanism or the braking device based on the information outside or inside the vehicle obtained by the vehicle outside information detection unit 12030 or the vehicle inside information detection unit 12040, and output the control command to the driving system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of the advanced driver assistance system (ADAS), including collision avoidance or impact mitigation of the vehicle, following driving based on the vehicle-to-vehicle distance, speed maintenance driving, vehicle collision warning or vehicle lane departure warning, etc.

[0204] In addition, by controlling the driving force generating device, steering mechanism or braking device, etc. based on the information outside or inside the vehicle obtained by the external information detection unit 12030 or the internal information detection unit 12040, the microcomputer 12051 can perform collaborative control aimed at achieving automatic driving, etc., wherein the automatic driving enables the vehicle to drive autonomously without relying on the driver's operation.

[0205] In addition, based on the information outside the vehicle obtained by the vehicle exterior information detection unit 12030, the microcomputer 12051 can output a control command to the body system control unit 12020. For example, the microcomputer 12051 can perform cooperative control aimed at preventing glare by controlling the headlights to change from high beam to low beam, for example, according to the position of the preceding vehicle or the oncoming vehicle detected by the vehicle exterior information detection unit 12030.

[0206] The sound / image output unit 12052 sends an output signal of at least one of sound and image to an output device capable of visually or auditorily notifying the vehicle's passengers or the outside of the vehicle of information. Fig.25 In the example of , as the output device, an audio speaker 12061, a display portion 12062, and an instrument panel 12063 are shown. For example, the display portion 12062 may include at least one of an in-vehicle display and a head-up display.

[0207] Fig.26 12031 is a diagram showing an example of the installation position of the camera unit 12031.

[0208] exist Fig.26 In the figure, the camera unit 12031 includes camera units 12101, 12102, 12103, 12104 and 12105.

[0209] The camera units 12101, 12102, 12103, 12104 and 12105 are, for example, arranged at the front nose, rearview mirror, rear bumper and rear door of the vehicle 12100 and at the upper part of the windshield in the vehicle compartment. The camera unit 12101 arranged at the front nose and the camera unit 12105 arranged at the upper part of the windshield in the vehicle compartment mainly obtain images in front of the vehicle 12100. The camera units 12102 and 12103 arranged at the rearview mirror mainly obtain images on both sides of the vehicle 12100. The camera unit 12104 arranged at the rear bumper or rear door mainly obtains images behind the vehicle 12100. The camera unit 12105 arranged at the upper part of the windshield in the vehicle compartment is mainly used to detect the vehicle in front, pedestrians, obstacles, traffic lights, traffic signs or lanes, etc.

[0210] By the way, Fig.26An example of the imaging range of the imaging units 12101 to 12104 is shown. The imaging range 12111 indicates the imaging range of the imaging unit 12101 provided at the front nose. The imaging ranges 12112 and 12113 respectively indicate the imaging ranges of the imaging units 12102 and 12103 provided at the rearview mirror. The imaging range 12114 indicates the imaging range of the imaging unit 12104 provided at the rear bumper or the rear door. For example, by superimposing the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 observed from above is obtained.

[0211] At least one of the imaging units 12101 to 12104 may have a function of obtaining distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera composed of a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.

[0212] For example, based on the distance information obtained from the camera units 12101 to 12104, the microcomputer 12051 can determine the distance to each three-dimensional object within the camera ranges 12111 to 12114 and the time change of the distance (relative speed with respect to the vehicle 12100), thereby extracting the nearest three-dimensional object as the front vehicle, in particular, the three-dimensional object exists on the driving path of the vehicle 12100 and travels in the same direction as the vehicle 12100 at a predetermined speed (e.g., equal to or greater than 0 km / h). In addition, the microcomputer 12051 can pre-set the inter-vehicle distance to be maintained with the front vehicle, and perform automatic braking control (including follow-up stop control) or automatic acceleration control (including follow-up start control), etc. Therefore, cooperative control such as automatic driving, which is intended to make the vehicle travel autonomously without relying on the driver's operation, can be performed.

[0213] For example, based on the distance information obtained from the camera units 12101 to 12104, the microcomputer 12501 can classify the three-dimensional object data of the three-dimensional object into three-dimensional object data of two-wheeled vehicles, standard vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, extract the classified three-dimensional object data, and use the extracted three-dimensional object data to automatically avoid obstacles. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that the driver of the vehicle 12100 can visually identify and obstacles that the driver of the vehicle 12100 is difficult to visually identify. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle. In the case where the collision risk is equal to or higher than the set value and therefore there is a possibility of collision, the microcomputer 12051 outputs a warning to the driver via the audio speaker 12061 or the display unit 12062, and performs forced deceleration or evasive steering via the drive system control unit 12010. Therefore, the microcomputer 12051 can assist driving to avoid collisions.

[0214] At least one of the camera units 12101 to 12104 may be an infrared camera that detects infrared rays. The microcomputer 12051 may identify a pedestrian, for example, by determining whether a pedestrian exists in the camera images of the camera units 12101 to 12104. For example, such identification of pedestrians is performed by the following steps: a step of extracting feature points in the camera images of the camera units 12101 to 12104 as infrared cameras; and a step of performing pattern matching processing on a series of feature points representing the contour of an object to determine whether it is a pedestrian. If the microcomputer 12051 determines that a pedestrian exists in the camera images of the camera units 12101 to 12104 and thus identifies the pedestrian, the sound / image output unit 12052 controls the display unit 12062 so that a square contour line for emphasis is displayed in a manner superimposed on the identified pedestrian. The sound / image output unit 12052 may also control the display unit 12062 so that an icon representing a pedestrian or the like is displayed at a desired position.

[0215] An example of a mobile body control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to the camera unit 12031 in the above-mentioned configuration. Specifically, the camera device according to any one of the above-mentioned embodiments and their modified examples (for example, the camera device 1A) can be applied to the camera unit 12031. Applying the technology according to the present disclosure to the camera unit 12031 enables a captured image with less noise and higher resolution to be obtained. Therefore, it is possible to enable the mobile body control system to perform high-precision control using the captured image.

[0216] Although the present technology has been described with reference to the first to fourth embodiments and Modifications 1 to 3, the present technology is not limited to the above-mentioned embodiments, etc., and various modifications can be made. For example, it is not necessary to include all the components described in the above-mentioned embodiments, etc., but any other components can be included. For example, in the image pickup device 1 according to the above-mentioned first embodiment, an isolator or the like that electrically isolates adjacent photoelectric conversion units 51 can be provided.

[0217] Note that the effects described herein are merely examples and are not restrictive. In addition, any other effects may be achieved.

[0218] Note that the present technology may have any of the following structures. According to the present technology having any of the following structures, a light shielding unit with high dimensional accuracy can be obtained. Therefore, an imaging device that achieves both excellent light shielding performance of the photocharge holding unit and excellent charge transfer efficiency can be obtained. (1)

[0220] A camera device, comprising:

[0221] A semiconductor substrate having a first surface and a second surface opposite to each other, the semiconductor substrate including a pixel array portion in which a plurality of unit pixels are arranged in an array in a row direction and a column direction;

[0222] a photoelectric conversion unit which is provided on the second surface side of the semiconductor substrate for each of the unit pixels and generates a charge corresponding to the amount of light reception by photoelectric conversion;

[0223] a charge holding portion which is provided on the first surface side of the semiconductor substrate for each of the unit pixels and holds the charge transferred from the photoelectric conversion portion; and

[0224] a first light shielding portion, which is arranged in the semiconductor substrate and is located between the photoelectric conversion portion and the charge holding portion, the first light shielding portion comprising a first horizontal light shielding portion and a first vertical light shielding portion, the first horizontal light shielding portion extending along the in-plane direction of the semiconductor substrate, the first vertical light shielding portion being orthogonal to the first horizontal light shielding portion, wherein

[0225] The first vertical light shielding portion includes a first row light shielding portion and a first column light shielding portion formed along two adjacent sides of the unit pixel having a rectangular shape, and the first vertical light shielding portion is provided for each of the unit pixels located in every other column and in a 45-degree inclined direction, and

[0226] In a plan view, the first horizontal light shielding portion has an end portion at or near a position connecting the first row light shielding portion and the first column light shielding portion provided for each of the unit pixels located in every other column and in a 45-degree inclined direction. (2)

[0228] The imaging device according to (1) above, wherein

[0229] The semiconductor substrate comprises a Si{111} substrate,

[0230] The plurality of first vertical light shielding portions provided for each of the unit pixels located in a 45 degree tilt direction and each facing the Si{111} substrate. <110> The direction is set in a zigzag pattern, and

[0231] The ends of the plurality of first horizontal light shielding portions arranged for each of the unit pixels positioned in a 45 degree tilt direction and arranged in every other column are substantially aligned with the ends of the Si{111} substrate. <110> The direction is parallel. (3)

[0233] The imaging device according to (1) or (2) above, wherein the plurality of first vertical light shielding portions provided for the unit pixels located in every other column and in a direction inclined at 45 degrees are continuous with each other. (4)

[0235] The imaging device according to any one of (1) to (3) above, further comprising:

[0236] a charge-voltage conversion portion which is provided on the first surface of the semiconductor substrate and to which charge is transferred from the charge holding portion; and

[0237] a drain portion provided on the first surface of the semiconductor substrate, to which charges overflowing from the photoelectric conversion portion are discharged, and to which the drain portion is connected to a power source, wherein

[0238] The charge-voltage conversion unit is shared by two unit pixels adjacent to each other in a row direction, and

[0239] The drain portion is shared by two of the unit pixels adjacent to each other in a column direction. (5)

[0241] The imaging device according to (4) above further includes:

[0242] a color filter layer provided on the second surface side of the semiconductor substrate and including a plurality of color filters that selectively transmit light in wavelength ranges different from each other, wherein

[0243] Color filters that selectively transmit light in the same wavelength range as each other are provided in two of the unit pixels that are adjacent to each other and share the charge-voltage conversion portion. (6)

[0245] The imaging device according to (4) above further includes:

[0246] a plurality of transistors which are provided on the second surface side of the semiconductor substrate for each of the unit pixels and form a pixel circuit which outputs a pixel signal based on the charge output from the unit pixel P, wherein

[0247] The plurality of transistors provided in one of two unit pixels adjacent to each other and sharing the charge-voltage conversion unit and the plurality of transistors provided in the other of the two unit pixels adjacent to each other and sharing the charge-voltage conversion unit are arranged point-symmetrically. (7)

[0249] An imaging device according to any one of (1) to (6) above, wherein the plurality of first vertical shading portions provided for each of the unit pixels positioned in every other column and along a 45-degree inclined direction include protrusions provided at intersections of each of the first row shading portions and the first column shading portions, and each of the protrusions protrudes along the row direction or the column direction. (8)

[0251] According to the camera device described in (7) above, the end portions of the plurality of first horizontal shading portions set for each of the unit pixels positioned in every other column and along a 45-degree inclined direction are formed at the positions of the protrusions connected at the intersections of the first row shading portions and the first column shading portions. (9)

[0253] The image pickup device according to any one of (1) to (8) above, wherein the first vertical light shielding portion extends from the first surface toward the second surface of the semiconductor substrate. (10)

[0255] The imaging device according to the above (9), wherein the first vertical light shielding portion extends between the first surface and the second surface of the semiconductor substrate. (11)

[0257] The imaging device according to (9) above, wherein the first row light shielding portion and the first column light shielding portion are independent of each other. (12)

[0259] According to the imaging device of (11) above, the interval s between the light shielding portions in the first row and the light shielding portions in the first column and the protrusion amount d of another light shielding portion adjacent to one of the light shielding portions have a relationship of s≤d. (13)

[0261] The imaging device according to any one of (1) to (12) above, further comprising:

[0262] A second light shielding portion is provided in the semiconductor substrate, wherein in a plan view, the second light shielding portion comprises a second horizontal light shielding portion and a second vertical light shielding portion, the second horizontal light shielding portion extends in a plane of the semiconductor substrate where the first horizontal light shielding portion is not formed, and the second vertical light shielding portion is orthogonal to the second horizontal light shielding portion, wherein

[0263] The second vertical light shielding portion includes a second row light shielding portion and a second column light shielding portion formed along two sides adjacent to each other and without the first row light shielding portion and the first column light shielding portion, and the second vertical light shielding portion is provided for each of the unit pixels located in every other column and in a 45-degree inclined direction, and

[0264] The second horizontal light shielding portion has an end portion at or near a position connecting the second row light shielding portion and the second column light shielding portion provided for each of the unit pixels located in every other column and in a 45-degree inclined direction in a plan view. (14)

[0266] The imaging device according to the above (13), wherein the second vertical light shielding portion extends from the second surface toward the first surface of the semiconductor substrate. (15)

[0268] The imaging device according to the above (13), wherein the second vertical light shielding portion extends from the first surface toward the second surface of the semiconductor substrate. (16)

[0270] The imaging device according to the above (14), wherein the second vertical light shielding portion extends between the second surface and the second surface of the semiconductor substrate. (17)

[0272] The image pickup device according to any one of (13) to (16) above, wherein the second horizontal light shielding portion is provided closer to the second surface side than the first horizontal light shielding portion. (18)

[0274] The image pickup device according to any one of (13) to (17) above, wherein the first horizontal light shielding portion and the second horizontal light shielding portion partially overlap in a plan view. (19)

[0276] The imaging device according to any one of (13) to (18) above, wherein

[0277] The first vertical light shielding portion and the second vertical light shielding portion include a first protrusion and a second protrusion at respective intersections opposite to each other, the first protrusion and the second protrusion protrude in a staggered manner along a 45-degree inclined direction, and

[0278] A well contact is provided between the first protrusion and the second protrusion, and the well contact applies a fixed potential to the semiconductor substrate. (20)

[0280] An electronic device comprising a camera device,

[0281] The camera device comprises:

[0282] A semiconductor substrate including a first surface and a second surface opposite to each other, the semiconductor substrate including a pixel array portion in which a plurality of unit pixels are arranged in an array in a row direction and a column direction;

[0283] a photoelectric conversion unit which is provided on the second surface side of the semiconductor substrate for each of the unit pixels and generates a charge corresponding to the amount of light reception by photoelectric conversion;

[0284] a charge holding portion which is provided on the first surface side of the semiconductor substrate for each of the unit pixels and holds the charge transferred from the photoelectric conversion portion; and

[0285] a first light shielding portion, which is arranged in the semiconductor substrate and is located between the photoelectric conversion portion and the charge holding portion, the first light shielding portion comprising a first horizontal light shielding portion and a first vertical light shielding portion, the first horizontal light shielding portion extending along the in-plane direction of the semiconductor substrate, the first vertical light shielding portion being orthogonal to the first horizontal light shielding portion, wherein

[0286] The first vertical light shielding portion includes a first row light shielding portion and a first column light shielding portion formed along two adjacent sides of the unit pixel having a rectangular shape, and the first vertical light shielding portion is provided for each of the unit pixels located in every other column and in a 45-degree inclined direction, and

[0287] In a plan view, the first horizontal light shielding portion has an end portion at or near a position connecting the first row light shielding portion and the first column light shielding portion provided for each of the unit pixels located in every other column and in a 45-degree inclined direction.

[0288] This application claims the benefit of priority from Japanese Patent Application JP2022-147342 filed with the Japan Patent Office on September 15, 2022, the entire contents of which are incorporated herein by reference.

[0289] It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may be made according to design requirements and other factors as long as they are within the scope of the appended claims or the equivalents thereof.

Claims

1. A camera device, comprising: A semiconductor substrate having a first surface and a second surface opposite to each other, the semiconductor substrate including a pixel array portion in which a plurality of unit pixels are arranged in an array in a row direction and a column direction; a photoelectric conversion unit which is provided on the second surface side of the semiconductor substrate for each of the unit pixels and generates a charge corresponding to the amount of light reception by photoelectric conversion; a charge holding portion provided on the first surface side of the semiconductor substrate for each of the unit pixels and holding the charge transferred from the photoelectric conversion portion; and a first light shielding portion, which is arranged in the semiconductor substrate and is located between the photoelectric conversion portion and the charge holding portion, the first light shielding portion comprising a first horizontal light shielding portion and a first vertical light shielding portion, the first horizontal light shielding portion extending along the in-plane direction of the semiconductor substrate, the first vertical light shielding portion being orthogonal to the first horizontal light shielding portion, wherein The first vertical light shielding portion includes a first row light shielding portion and a first column light shielding portion formed along two adjacent sides of the unit pixel having a rectangular shape, and the first vertical light shielding portion is provided for each of the unit pixels located in every other column and in a 45-degree inclined direction, and In a plan view, the first horizontal light shielding portion has an end portion at or near a position connecting the first row light shielding portion and the first column light shielding portion provided for each of the unit pixels located in the every other column and in the 45-degree inclined direction.

2. The imaging device according to claim 1, wherein The semiconductor substrate comprises a Si{111} substrate, The plurality of first vertical light shielding portions arranged for each of the unit pixels located in the 45 degree tilted direction in every other column face the Si{111} substrate. <110> The direction is set in a zigzag pattern, and The ends of the plurality of first horizontal light shielding portions provided for each of the unit pixels located in the 45-degree inclined direction and arranged in every other column are substantially aligned with the ends of the Si{111} substrate. <110> The direction is parallel.

3. The imaging device according to claim 1, wherein: The plurality of first vertical light shielding portions provided for the unit pixels located in every other column and in a 45-degree inclined direction are continuous with each other.

4. The camera device according to claim 1, further comprising: a charge-voltage conversion portion which is provided on the first surface of the semiconductor substrate and to which the charge is transferred from the charge holding portion; and a drain portion provided on the first surface of the semiconductor substrate, the charge overflowing from the photoelectric conversion portion being discharged to the drain portion, and the drain portion being connected to a power source, wherein The charge-voltage conversion unit is shared by two unit pixels adjacent to each other in the row direction, and The drain portion is shared by two unit pixels adjacent to each other in the column direction.

5. The camera device according to claim 4, further comprising: a color filter layer provided on the second surface side of the semiconductor substrate and including a plurality of color filters that selectively transmit light in wavelength ranges different from each other, wherein Color filters that selectively transmit light in the same wavelength range as each other are provided in two unit pixels that are adjacent to each other and share the charge-voltage conversion portion.

6. The camera device according to claim 4, further comprising: a plurality of transistors which are provided on the second surface side of the semiconductor substrate for each of the unit pixels and form a pixel circuit which outputs a pixel signal based on the charge output from the unit pixel P, wherein The plurality of transistors provided in one of two unit pixels adjacent to each other and sharing the charge-voltage conversion unit and the plurality of transistors provided in the other of the two unit pixels adjacent to each other and sharing the charge-voltage conversion unit are arranged point-symmetrically.

7. The imaging device according to claim 1, wherein: The plurality of first vertical light shielding portions provided for each of the unit pixels located in every other column and in a 45-degree oblique direction include protrusions provided at intersections of each of the first row light shielding portion and the first column light shielding portion, the protrusions protruding in the row direction or the column direction.

8. The imaging device according to claim 7, wherein: The end portions of the plurality of first horizontal light shielding portions provided for each of the unit pixels positioned in every other column and in a 45-degree oblique direction are formed at positions connecting protrusions provided at intersections of each of the first row light shielding portions and the first column light shielding portions.

9. The imaging device according to claim 1, wherein: The first vertical light shielding portion extends from the first surface toward the second surface of the semiconductor substrate.

10. The imaging device according to claim 9, wherein: The first vertical light shielding portion passes through between the first surface and the second surface of the semiconductor substrate.

11. The imaging device according to claim 9, wherein: The first row light shielding portion and the first column light shielding portion are independent of each other.

12. The imaging device according to claim 11, wherein: The interval s between the light shielding portions in the first row and the light shielding portions in the first column and the protrusion amount d of another light shielding portion adjacent to one of the light shielding portions have a relationship of s≦d.

13. The camera device according to claim 1, further comprising: A second light shielding portion is provided in the semiconductor substrate, wherein in a plan view, the second light shielding portion comprises a second horizontal light shielding portion and a second vertical light shielding portion, the second horizontal light shielding portion extends in a plane of the semiconductor substrate where the first horizontal light shielding portion is not formed, and the second vertical light shielding portion is orthogonal to the second horizontal light shielding portion, wherein The second vertical light shielding portion includes a second row light shielding portion and a second column light shielding portion formed along two sides adjacent to each other and without the first row light shielding portion and the first column light shielding portion, and the second vertical light shielding portion is provided for each of the unit pixels located in every other column and in a 45-degree inclined direction, and The second horizontal light shielding portion has an end portion at or near a position connecting the second row light shielding portion and the second column light shielding portion provided for each of the unit pixels located in every other column and in a 45-degree inclined direction in a plan view.

14. The imaging device according to claim 13, wherein: The second vertical light shielding portion extends from the second surface toward the first surface of the semiconductor substrate.

15. The imaging device according to claim 13, wherein: The second vertical light shielding portion extends from the first surface toward the second surface of the semiconductor substrate.

16. The imaging device according to claim 14, wherein: The second vertical light shielding portion passes through between the second surface and the second surface of the semiconductor substrate.

17. The imaging device according to claim 13, wherein: The second horizontal light shielding portion is provided closer to the second surface side than the first horizontal light shielding portion.

18. The imaging device according to claim 13, wherein: The first horizontal light shielding portion and the second horizontal light shielding portion partially overlap in a plan view.

19. The imaging device according to claim 13, wherein The first vertical light shielding portion and the second vertical light shielding portion include a first protrusion and a second protrusion at each of the intersections opposite to each other, the first protrusion and the second protrusion protrude in a staggered manner along a 45-degree inclined direction, and A well contact is provided between the first protrusion and the second protrusion, and the well contact applies a fixed potential to the semiconductor substrate.

20. An electronic device comprising a camera device, The camera device comprises: A semiconductor substrate including a first surface and a second surface opposite to each other, the semiconductor substrate including a pixel array portion in which a plurality of unit pixels are arranged in an array in a row direction and a column direction; a photoelectric conversion unit which is provided on the second surface side of the semiconductor substrate for each of the unit pixels and generates a charge corresponding to the amount of light reception by photoelectric conversion; a charge holding portion provided on the first surface side of the semiconductor substrate for each of the unit pixels and holding the charge transferred from the photoelectric conversion portion; as well as a first light shielding portion, which is arranged in the semiconductor substrate and is located between the photoelectric conversion portion and the charge holding portion, the first light shielding portion comprising a first horizontal light shielding portion and a first vertical light shielding portion, the first horizontal light shielding portion extending along the in-plane direction of the semiconductor substrate, the first vertical light shielding portion being orthogonal to the first horizontal light shielding portion, wherein The first vertical light shielding portion includes a first row light shielding portion and a first column light shielding portion formed along two adjacent sides of the unit pixel having a rectangular shape, and the first vertical light shielding portion is provided for each of the unit pixels located in every other column and in a 45-degree inclined direction, and In a plan view, the first horizontal light shielding portion has an end portion at or near a position connecting the first row light shielding portion and the first column light shielding portion provided for each of the unit pixels located in every other column and in a 45-degree inclined direction.

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