Radiation-emitting semiconductor component and method for producing radiation-emitting semiconductor component

Abstract

The invention relates to a radiation-emitting semiconductor component (1), comprising a carrier (2) having a first main surface (2A) and at least one side surface (2C) running transversely to the first main surface (2A), at least one semiconductor chip (10), which is arranged on the first main surface (2A) of the carrier (2) and emits radiation at a radiation exit surface (10A) during operation, and a housing (17), which is arranged on the first main surface (2A) of the carrier (2), at least one side surface (2C) of the carrier (2) is not covered by the housing (17), having a recess (18) which is arranged on a radiation exit surface (10A) of the at least one semiconductor chip (10) and which is laterally bounded by at least one housing wall (17C), wherein the at least one housing wall (17C) is offset at least in sections laterally in the direction of the recess with respect to an edge (3) of the carrier (2) delimiting the first main surface (2A). The invention further relates to a method for producing such a radiation-emitting semiconductor component (1).

Description

Technical Field

[0001] A radiation-emitting semiconductor component and a method for producing a radiation-emitting semiconductor component are provided. The radiation-emitting semiconductor component can be designed to emit white light and can be produced with a small component size or luminous area.

[0002] This patent application claims the priority of German patent application DE 10 2022 121 519.9, the disclosure content of which is incorporated herein by reference. Background Art

[0003] Various designs of white light-emitting diodes with small component sizes (that is to say, for example, less than 2.5 mm×2.5 mm) are known. For example, the light-emitting diode can have a so-called QFN (quad flat no-lead) housing with a metered dam that can be formed with silicone, wherein the conversion material is arranged in the dam. However, during the production of the composite, the silicone can get into the separation grooves provided for separating the light-emitting diodes from the composite, so that a multi-stage separation process is required because the silicone is soft and stains the saw blade. In addition, flip chips with a sprayed-on conversion layer and two electrical contacts on the back side are known, wherein the electrical contacts are embedded in an epoxy molding compound. Due to the epoxy molding compound, heat dissipation is affected. In addition, these flip chips are relatively easy to crack. Summary of the invention

[0004] The object to be achieved here is, in particular, to specify a radiation-emitting semiconductor component that is as stable as possible. Another object to be achieved is, in particular, to specify an efficient method for producing a radiation-emitting semiconductor component that is as stable as possible.

[0005] This object is achieved in particular by a radiation-emitting semiconductor component and a method for producing a radiation-emitting semiconductor component having the features of the independent claims.

[0006] Further advantages and configurations of the radiation-emitting semiconductor component and of the method for producing a radiation-emitting semiconductor component are the subject matter of the dependent claims.

[0007] According to at least one embodiment of the radiation-emitting semiconductor component, the semiconductor component comprises a carrier having a first main surface and at least one side surface extending transversely, in particular perpendicularly, to the first main surface. The number of side surfaces is related to the three-dimensional configuration of the carrier. For example, the carrier can have a square structure and thus have four side surfaces extending transversely or perpendicularly to the first main surface. For example, the carrier can have a lead frame, a printed circuit board or a ceramic substrate.

[0008] According to at least one embodiment, the radiation-emitting semiconductor device comprises at least one semiconductor chip, which is arranged on a first main surface of a carrier. At least one semiconductor chip can emit radiation at a radiation exit surface during operation. The radiation exit surface can be located on a side of the at least one semiconductor chip that is opposite to the carrier or facing away from the carrier and delimits the semiconductor chip on this side. At least one semiconductor chip can have at least one side extending transversely to, for example, perpendicularly to, the radiation exit surface. The number of side surfaces is related to the three-dimensional configuration of the semiconductor chip. For example, at least one semiconductor chip can have a square configuration, thereby having four side surfaces extending transversely or perpendicularly to the first main surface.

[0009] At least one semiconductor chip can be a surface emitter, a volume emitter or a flip chip. A surface emitting semiconductor chip can have electrical contacts on its upper side and electrical contacts on its lower side. A volume emitting semiconductor chip can have two electrical contacts on its upper side. A flip chip can have two electrical contacts on its lower side.

[0010] According to at least one embodiment, the radiation-emitting semiconductor component has a housing. The housing can be molded onto the carrier and the at least one semiconductor chip. In other words, the housing can be mechanically connected to the carrier and the at least one semiconductor chip without additional connecting means such as, for example, an adhesive and can lie against the carrier or the at least one semiconductor chip in the region where the housing is molded.

[0011] According to at least one embodiment or design, at least one side of the carrier is not covered by the housing. In particular, all sides of the carrier are not covered by the housing. In addition, a second main surface of the carrier opposite to the first main surface is not covered by the housing. The uncovered surface of the carrier can achieve good heat dissipation.

[0012] Furthermore, at least one semiconductor chip may not be covered by the housing on at least one side surface or on all side surfaces.The housing may extend from the first main surface of the carrier via the side surface / side surfaces of the at least one semiconductor chip beyond the radiation exit surface of the semiconductor chip.

[0013] In accordance with at least one embodiment or configuration, the housing comprises a recess which is arranged at the radiation exit area of ​​the semiconductor chip.The recess may be arranged on a side of the semiconductor chip facing away from the carrier.

[0014] According to at least one embodiment or design, the housing is laterally bounded by at least one housing wall. The number of housing walls that laterally bound the housing is related to the three-dimensional configuration of the housing. For example, the housing can have a square configuration and thus have four housing walls.

[0015] According to at least one embodiment or design, at least one housing wall or all housing walls are at least partially offset laterally in the direction of the recess relative to an edge of the carrier that delimits the first main surface. In other words, at least one housing wall or all housing walls can have a lateral spacing from the edge of the carrier in a vertical projection onto the first main surface of the carrier at least in sections. The lateral spacing can be determined parallel to the first main surface. The lateral spacing from the edge is greater than zero and can be, for example, up to 20 μm. For example, at least one housing wall or all housing walls can be set back from the edge of the carrier at least in sections.

[0016] The lateral spacing is produced by separating grooves which are provided between adjacent shells during the production of the composite component, as will be explained in more detail below in conjunction with the method.

[0017] According to at least one embodiment of the radiation-emitting semiconductor component, the semiconductor component comprises:

[0018] a carrier having a first main surface and at least one side surface extending transversely to the first main surface,

[0019] at least one semiconductor chip which is arranged on the first main surface of the carrier and which, during operation, emits radiation at the radiation exit surface,

[0020] - a housing, the housing

[0021] - molded onto the carrier and the at least one semiconductor chip, wherein at least one side surface of the carrier is not covered by the housing,

[0022] - has a recess which is arranged at the radiation exit surface of at least one semiconductor chip, and

[0023] - is laterally delimited by at least one housing wall,

[0024] In this case, at least one housing wall is offset at least in sections laterally in the direction of the depression relative to an edge of the carrier that delimits the first main area.

[0025] The radiation-emitting semiconductor component can advantageously be designed to be small, having component dimensions of not more than 2 mm×not more than 2 mm.

[0026] At least one semiconductor chip may have a first and a second semiconductor region with different conductivity and an active region arranged between the first and the second semiconductor region, which is designed to generate radiation. The first and the second semiconductor region and the active region may each be formed by one or more semiconductor layers. The semiconductor layer may be a layer deposited epitaxially on a growth substrate. The growth substrate may remain in the semiconductor chip after the growth of the semiconductor layer or may be at least partially removed.

[0027] In the active region, a quantum well structure, in particular a single quantum well (Single Quantum Well, SQW) or a multiple quantum well structure (Multiple Quantum Well, MQW) can be formed by means of semiconductor layers.

[0028] For example, materials based on arsenide compound semiconductors, phosphide compound semiconductors or nitride compound semiconductors are suitable for the semiconductor regions or semiconductor layers of the semiconductor chip. “Based on arsenide compound semiconductors, phosphide compound semiconductors or nitride compound semiconductors” means in this context that the semiconductor layer contains Al n Ga m In 1-n-m As、Al n Ga m In 1-n-m P or Al n Ga m In 1-n-m N, where 0≤n≤1, 0≤m≤1 and n+m≤1 apply. In this case, the material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, the material may have one or more dopants and additional components which do not substantially change the Al n Ga m In 1-n-m As material, Al n Ga m In 1-n-m P material or Al n Ga m In 1-n-m Characteristic physical properties of N materials. However, for the sake of simplicity, the above formula only includes the main components of the lattice (Al, Ga, In, As or P or N), even if these components can be partially replaced by small amounts of other substances.

[0029] According to at least one embodiment or design, the housing is a housing molded by means of vacuum injection molding. In other words, the housing can be molded by means of VIM (Vacuum Injection Molding), as explained in detail below in conjunction with the method. The housing produced by means of vacuum injection molding can have sharp edges with a relatively small bending radius, for example a bending radius of less than 10 μm.

[0030] According to at least one embodiment or design, the housing is formed by a housing material that contains a reflective material. For example, the housing can be formed as a reflector. The housing can be designed to reflect radiation emitted at at least one side of the semiconductor chip with a reflectivity of at least 50%. In this case, part of the radiation can be deflected in the direction of the recess. For example, at least one semiconductor chip can emit radiation with a wavelength in the ultraviolet, visible or infrared spectral range during operation.

[0031] The reflective material can have particles of TiO 2 and / or ZrO 2 , for example. The median particle size can advantageously be at most 1 μm, wherein the median particle size is understood to be the median. Particles of this size can be processed well by means of vacuum injection molding.

[0032] Furthermore, the housing material can contain a plastic material. Silicone is a possible plastic material, for example. The reflective material or particles can be evenly distributed in the plastic material.

[0033] According to at least one embodiment or design, a molding compound is arranged in the recess. The molding compound can completely fill the recess and preferably does not extend out of the upper side of the housing arranged on the side of the housing facing away from the carrier. For example, the filler contains a conversion material, which is designed for wavelength conversion of radiation. Therefore, at least a part of the radiation emitted by the semiconductor chip can be subjected to a change in wavelength by the filler, for example, shifted to a larger wavelength. By superimposing the primary radiation from the semiconductor chip with the secondary radiation from the filler, it is possible that the radiation-emitting semiconductor device emits white light, for example, by combining blue primary radiation and yellow secondary radiation, or emits colored light or also emits invisible radiation.

[0034] According to at least one embodiment or design, the recess extends from the upper side of the housing to the radiation exit surface of the at least one semiconductor chip and ends at the radiation exit surface. In other words, the recess does not extend beyond the radiation exit surface of the semiconductor chip in the direction of the carrier. It is also possible that the recess does not extend laterally beyond the at least one semiconductor chip on the side facing the at least one semiconductor chip. In other words, the recess can have a lateral dimension on the side facing the at least one semiconductor chip, which is at most as large as a lateral dimension of the radiation exit surface, wherein the lateral dimension can be determined parallel to the first main surface of the carrier.

[0035] According to at least one embodiment or design, the carrier has an opening into which the housing extends. Thus, the opening can be filled with housing material. It is feasible that the carrier has a plurality of openings into which the housing extends.

[0036] For example, the opening extends from the first main surface of the carrier through the carrier to the second main surface of the carrier. The opening can be used as a filling opening for the molding compound of the housing to be produced during the production of the housing. For this purpose, it has proven to be advantageous if the opening is smaller at the second main surface than at the first main surface. However, it is also possible that the opening is larger at the second main surface than at the first main surface. In this design, the housing can be particularly well anchored in the carrier by the housing material arranged in the opening.

[0037] The opening can have a trapezoidal or multi-stage cross section parallel to a plane extending perpendicular to the first main surface or the second main surface. In addition, the opening can have a circular, elliptical or multi-angle cross section parallel to a plane extending parallel to the first main surface or the second main surface.

[0038] According to at least one embodiment or design, the carrier has a first bonding element of a first polarity and a second bonding element of a second polarity different from the first polarity, wherein the second bonding element is separated from the first bonding element by a gap, for example, which is electrically insulating. Here, the opening can be arranged in the gap. Thus, the opening can be arranged in the gap that is already present between the first and second bonding elements in a space-saving manner.

[0039] The method described below is suitable for producing a radiation-emitting semiconductor component of the type described above. Features described in conjunction with the radiation-emitting semiconductor component can therefore also be used for the method, and vice versa.

[0040] According to at least one embodiment of the method for producing a radiation-emitting semiconductor component, the method comprises the following steps:

[0041] - providing a carrier composite,

[0042] - applying radiation-emitting semiconductor chips to the carrier assembly, wherein the radiation-emitting semiconductor chips each have a radiation exit area,

[0043] - providing a forming tool having a cavity,

[0044] - arranging the carrier assembly with the radiation-emitting semiconductor chips applied thereon relative to the molding tool in such a way that at least one radiation-emitting semiconductor chip is arranged in each cavity,

[0045] - filling the cavities with a molding compound in order to produce a housing, wherein the radiation-emitting semiconductor chips are respectively covered at the radiation exit surface by a component of the molding tool in order to produce a recess in the housing, and wherein in each case two adjacent cavities are spaced apart from one another by a further component of the molding tool in order to produce a separating trench between in each case two adjacent housings,

[0046] - dividing the carrier assembly together with the radiation-emitting semiconductor chip applied thereon and the molded housing through corresponding separation grooves, wherein the carrier of the radiation-emitting semiconductor component is separated from the carrier assembly, the radiation-emitting semiconductor components each having a first main surface, on which at least one radiation-emitting semiconductor chip is arranged, and wherein the separation grooves are each designed to be so wide that a housing wall of the housing adjacent to the separation grooves is, after the separation, at least partially laterally offset in the direction of the recess relative to an edge of the carrier that delimits the first main surface, onto which the housing is molded.

[0047] For example, the method steps may be performed in the order described.

[0048] The relevant separation grooves can have a width corresponding to twice the lateral spacing of the housing wall from the edge of the carrier. For example, the width of the separation grooves can decrease with increasing depth. In other words, the separation grooves can taper in the direction of the carrier assembly. Correspondingly, the housing wall can extend obliquely in the finished semiconductor device relative to the first main surface of the carrier, that is to say neither at right angles nor parallel. In addition, the separation grooves can have a depth corresponding to at least 50% of the height of the housing wall. In this case, the height can correspond to a vertical extension, which is determined, for example, along a vertical direction extending transversely to, in particular perpendicularly to, the first main surface of the carrier.

[0049] The width or depth of the separating groove is selected in particular such that during separation no housing material or only a small amount of housing material, from which the housing is respectively formed, has to be separated. In particular, the separating groove is free of silicone. As a result, separation can be performed in a single-stage process, for example by sawing, without a previous step for removing the silicone.

[0050] In particular, the molding compound has the same material composition as the housing material, which has already been described above.

[0051] According to at least one embodiment or design, the housing is produced by means of vacuum injection molding (VIM). In this case, the molding compound can be injected into a chamber in which a vacuum is generated. The filling pressure prevailing during the injection can be between 0.1 bar and 0.5 bar. By means of vacuum injection molding, it is possible to realize small housing dimensions with high precision, so that correspondingly small component dimensions can be realized. Another advantage is that the formation of bubbles, which usually make the housing vulnerable to cracking, can be prevented, so that the housing and correspondingly also the radiation-emitting semiconductor component are relatively stable.

[0052] According to at least one embodiment or design, the cavity-bounding component of the molding tool is produced by means of additive manufacturing. By means of additive manufacturing, it is possible to realize cavities with relatively complex geometries and correspondingly also housings with relatively complex geometries. For example, the cavity-bounding component of the molding tool contains polydimethylsiloxane (PDMS) or consists of it. The surface of the component formed by PDMS is characterized by a high surface quality.

[0053] According to at least one embodiment or design, the filler is introduced into the recess by means of a glue dispenser. As mentioned above, the filler can contain a conversion material. The filler can also have the structural properties and material properties described above.

[0054] According to at least one embodiment or design, the carrier composite has an opening, wherein each carrier to be separated is associated with at least one opening. The molding compound can be introduced into the cavity through the opening. Thus, the opening can be used as a filling opening as already explained in detail above and has the structural properties described above. When filling the cavity, the opening can be filled with the molding compound at the same time, so that the housing extends into the corresponding opening and can thus be anchored in the carrier.

[0055] According to at least one embodiment or design, providing a carrier composite comprises the step of providing a carrier body, wherein the carrier body has a recess. For example, the carrier body can be a lead frame composite, a composite consisting of a printed circuit board, or a composite consisting of a ceramic substrate. A portion of the recess can be designed to form a gap between bonding elements of different polarities in the separated carriers. Another portion of the recess can be designed to separate bonding elements of adjacent carriers to be separated from each other through the gap.

[0056] Furthermore, providing the carrier composite can include the step of introducing the base material into the recess. For example, the base material is introduced into the recess by means of vacuum injection molding (VIM). The base material can be different from the molding compound from which the housing is produced. The base material can be a plastic material, for example an epoxy resin. Epoxy resin is so hard compared to silicone that the carrier can be separated in a simple manner, for example by a sawing process, through the epoxy resin-filled recess.

[0057] According to at least one embodiment or configuration, an opening is produced in the base material of a portion of the recess. The base material can be provided with a shape suitable for the opening by a molding process, for example by means of vacuum injection molding, which shape is suitable, for example, for filling the opening or the anchoring structure.

[0058] Radiation-emitting semiconductor components are suitable, for example, for general lighting and lighting in vehicles.

[0059] Further advantages, advantageous embodiments and improvements result from the exemplary embodiments described below in conjunction with the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0060] The accompanying drawings show:

[0061] Figure 1A shows a schematic cross-sectional view of a radiation-emitting semiconductor component according to a first exemplary embodiment and Figure 1B shows a schematic plan view of a radiation-emitting semiconductor component according to a first exemplary embodiment;

[0062] Figure 2A shows a schematic sectional view of a radiation-emitting semiconductor component according to a second exemplary embodiment and Figure 2B shows a schematic plan view of a radiation-emitting semiconductor component according to a second exemplary embodiment;

[0063] Figures 3 to 5 shows a schematic plan view of a radiation-emitting semiconductor component according to a further exemplary embodiment;

[0064] Figure 6 shows a schematic sectional view of a radiation-emitting semiconductor component according to a further exemplary embodiment;

[0065] 7A to 7E , Figures 8 to 16 , Fig.17A and Fig. 17B as well as Fig.18 Schematic cross-sectional views and plan views show method steps of a method or possible variants for producing a radiation-emitting semiconductor component.

[0066] In the embodiments and figures, identical, identical or identically functioning elements are each provided with the same reference numerals. The illustrated elements and their size ratios to one another are not necessarily to be regarded as true to scale; rather, individual elements are illustrated exaggeratedly for the sake of better illustration and / or for better understanding. DETAILED DESCRIPTION

[0067] according to Figure 1A and Figure 1B A first exemplary embodiment of a radiation-emitting semiconductor component 1 is explained in more detail. Figure 1A The radiation-emitting semiconductor component 1 is shown along Figure 1B Schematic view of a cross section along line AA is shown.

[0068] The radiation-emitting semiconductor component 1 comprises a carrier 2 and a semiconductor chip 10 which is arranged on a first main area 2A of the carrier 2 .

[0069] The carrier 2 comprises a carrier substrate 4 having a first bonding element 5 of a first polarity and a bonding element 6 of a second polarity, wherein the first bonding element 5 and the second bonding element 6 are separated from one another by an electrically insulating gap 7. For example, the carrier substrate 4 is a metal carrier, for example a lead frame, wherein the bonding elements 5, 6 are parts of the lead frame. However, it is also possible that the carrier 2 has a printed circuit board (PCB) or a ceramic substrate. The first and second bonding elements 5, 6 form electrodes of the radiation-emitting semiconductor component 1, which are designed to electrically contact the radiation-emitting semiconductor component 1 from the outside at its back side 1B, which back side can be formed by the second main surface 2B of the carrier 2.

[0070] The carrier 2 furthermore has a base material 8 which is arranged in the gap 7 and covers the carrier substrate 4 at the side faces 4C which laterally delimit the carrier substrate 4. The base material 8 can be an electrically insulating material, for example a plastic material such as, for example, epoxy resin, which is simultaneously characterized by a higher hardness than, for example, silicone.

[0071] The semiconductor chip 10 can be a surface emitter, which has electrical contacts 14 on its upper side facing away from the carrier 2 and electrical contacts (not shown) on its lower side facing the carrier 2. However, it is also possible to use a volume emitter or a flip chip as the semiconductor chip 10. It is also possible that the semiconductor device 1 includes further semiconductor chips, for example ESD (electrostatic discharge) protection diodes and / or light-emitting diodes of other colors. Accordingly, the semiconductor device 1 can have further bonding elements for electrically contacting the semiconductor chip.

[0072] The semiconductor chip 10 is mechanically and also electrically connected to the second bonding element 6 via a connecting means 16, such as a solder layer or an adhesive layer, at the bottom side 10B facing the carrier 2. Furthermore, the semiconductor chip 10 is connected to the first bonding element 5 at the top side or at the radiation exit surface 10A on the side facing away from the carrier 2 by means of a connecting means 15, such as a bonding wire, arranged at the contact 14.

[0073] The semiconductor chip 10 comprises a first semiconductor region 11 of a first conductivity, for example p-type conductivity, and a second semiconductor region 13 of a second conductivity, for example n-type conductivity, and an active region 12 arranged between the first and second semiconductor regions 11, 13, which is designed to generate electromagnetic radiation, for example having a wavelength in the ultraviolet, visible or infrared spectral range. The first semiconductor region 11 is located on the side of the active region 12 facing away from the carrier 2 and can be electrically contacted by means of contacts 14 on the top side, while the second semiconductor region 13 is arranged on the side of the active region 12 facing the carrier 2 and can be electrically contacted by means of contacts on the bottom side. However, it is also possible to arrange a p-type conductive semiconductor region on the carrier side and an n-type conductive region on the side facing away from the carrier 2.

[0074] As already mentioned above, the first and second semiconductor regions 11, 13 and the active zone 12 are each formed by one or more semiconductor layers, wherein the semiconductor layers can be layers epitaxially deposited on a growth substrate, and the growth substrate can remain in the semiconductor chip 10 after the growth of the semiconductor layers or can be at least partially detached. For example, materials based on arsenide, phosphide or nitride compound semiconductors are suitable for the semiconductor regions 11, 12, 13 or semiconductor layers of the semiconductor chip 10, as described in detail above.

[0075] Furthermore, the radiation-emitting semiconductor component 1 has a housing 17. The housing 17 is molded onto the carrier 2 and the semiconductor chip 10. The housing 17 can thus be mechanically connected to the carrier 2 and the semiconductor chip 10 without additional connecting means such as, for example, an adhesive and can be in close contact with the carrier 2 or the semiconductor chip 10 in the region of the housing molding.

[0076] Carrier 2 includes a plurality of side surfaces 2C, each of which connects first main surface 2A and main surface 2B opposite first main surface 2A.

[0077] The side surface 2C and the second main surface 2B of the carrier 2 are not covered by the housing 17. The uncovered surfaces 2C and 2B of the carrier 2 can achieve good heat dissipation.

[0078] Furthermore, the semiconductor chip 10 comprises a plurality of side surfaces 10C, each of which connects the radiation exit surface 10A to the bottom surface 10B. The side surfaces 10C are covered by a housing 17, wherein the housing 17 extends from the first main surface 2A of the carrier 2 via the side surfaces 10C of the semiconductor chip 10 beyond the radiation exit surface 10A of the semiconductor chip 10. In other words, the housing 17 can extend out of the semiconductor chip 10 along a vertical direction V, which extends perpendicularly to the first and second lateral directions L1, L2 (see Figure 1A and Figure 1BThe first and second lateral directions L1 , L2 define a plane, and the first main surface 2A is arranged parallel to the plane. The radiation exit surface 10A may be partially covered by the housing 17 .

[0079] The housing 17 is delimited laterally by a plurality of housing walls 17C, wherein each housing wall 17C connects a housing top 17A facing away from the carrier 2 to a housing bottom 17B facing the carrier 2 and extends in places transversely to the housing top 17A and the housing bottom 17B.

[0080] The housing wall 17c is offset laterally inwards in sections relative to the edge 3 of the carrier 2 that delimits the first main surface 2A in the direction of the center point of the housing 17. In other words, the housing wall 17c has a lateral spacing a from the edge 3 of the carrier 2 in each region in a vertical projection onto the first main surface 2A of the carrier 2. The edge 3 of the carrier 2 protrudes laterally beyond the housing wall 17c in a vertical projection onto the first main surface 2A of the carrier 2. The lateral spacing a is determined parallel to a plane spanned by the first and second lateral directions L1, L2. The lateral spacing a is greater than zero and is, for example, at most 20 μm. The lateral spacing a can increase continuously in the vertical direction V, so that the housing wall 17C extends at an angle greater than 0° and less than 90° relative to the first main surface 2A of the carrier 2. In the region arranged at the first main surface 2A, the housing wall 17C can be arranged without a spacing from the carrier edge 3 or with a spacing a=0, so that the housing 17 ends flush with the carrier 2.

[0081] The lateral spacing a is determined by the separation grooves 33 (see Fig.16 ) It follows that the separating grooves are arranged between adjacent shells 17 during the production of the composite part, as will be explained in detail below in conjunction with the method.

[0082] The housing 17 has a recess 18, which extends from the housing upper side 17A to the radiation exit surface 10A of the semiconductor chip 10 and ends at the radiation exit surface 10A, wherein the recess 18 tapers gradually in the direction of the semiconductor chip 10. The recess 18 is designed so that it does not protrude laterally from the semiconductor chip 10 on the side facing the semiconductor chip. In other words, the recess 18 can have a first lateral dimension (not shown) and a second lateral dimension c1 on the side facing the semiconductor chip 10, which are at most as large as the first and second lateral dimensions c2, b2 of the radiation exit surface 10A (see Figure 1B ). The first transverse dimensions c1, c2 are determined parallel to the first transverse direction L1, and the second transverse dimension is determined parallel to the second transverse direction L2.

[0083] The housing wall 17 c is in each case offset in sections laterally in the direction of the depression 18 relative to an edge 3 of the carrier 2 delimiting the first main surface 2A.

[0084] Preferably, the housing 17 is a housing molded by means of vacuum injection molding (VIM), as explained in detail below in conjunction with the method. The housing 17 produced by means of vacuum injection molding can, for example, have sharp edges at the transition from the housing upper side 17A to the housing wall 17C and at the transition from the housing upper side 17A to the recess 18, respectively, with relatively small bending radii, for example less than 10 μm.

[0085] The housing 17 is used as a reflector and is formed by a housing material that contains a reflective material. The reflective material can, for example, have particles consisting of TiO2 and / or ZrO2. The median particle size is advantageously up to 1 μm, wherein the median particle size can be understood as the median. Particles of the size can be processed well by vacuum injection molding (VIM). In addition, the housing material can contain a plastic material. Silicone is considered as a plastic material, for example. The reflective material or particles can be evenly distributed in the plastic material. The housing material can be different from the basic material 8.

[0086] The housing 17 is designed to reflect radiation emitted at the side surface 10C of the semiconductor chip 10 with a reflectivity of at least 50%. In this case, part of the radiation can be deflected in the direction of the front side 1A of the semiconductor component 1 or the recess 18, which is partially formed by the housing top side 17A.

[0087] A filler 19 is arranged in the recess 18, which fills the recess completely. In this case, the filler 19 does not protrude beyond the housing upper side 17A. The filler 19 can contain a conversion material, which is designed for wavelength conversion of the primary radiation generated by the semiconductor chip 10, so that at least part of the radiation emitted by the semiconductor chip 10 undergoes a change in wavelength through the filler 19, for example, a shift to a larger wavelength. By superposition of the primary radiation with the secondary radiation from the filler 19, the radiation-emitting semiconductor component 1 can emit white light, for example, by combining blue primary radiation with yellow secondary radiation, but can also emit colored light or invisible radiation. For example, the front side 1A is the radiation exit side of the semiconductor component 1.

[0088] The housing 17 produced by means of vacuum injection molding (VIM) advantageously allows a small size range to be achieved in the housing 17 itself and also in the radiation-emitting semiconductor component 1. For example, the housing 17 can be designed to have a central thickness d of approximately 0.1 mm for the most part in the region of the housing surrounding the recess 18. Furthermore, the luminous area can correspond in its size range to the first lateral dimension c3 and the second lateral dimension b3 of the recess 18 on the front side 1A (see Figure 1B) can have a dimension c3 of ∼1.4 mm and a dimension b3 of ∼1.4 mm. A small luminous surface can be better imaged by an optical system. The luminous surface can be smaller than the radiation exit surface 10A, so that the brightness is increased. In addition, the semiconductor device 1 can have a first lateral dimension c=2 mm and a second lateral dimension b=1.6 mm, wherein a deviation of ±10% may occur due to manufacturing influences.

[0089] according to Figure 2A and Figure 2B A second exemplary embodiment of a radiation-emitting semiconductor component 1 is explained in more detail. Figure 2A The radiation-emitting semiconductor component 1 is shown along the Figure 2B Schematic view of a cross section along line AA is shown.

[0090] The radiation-emitting semiconductor component 1 comprises a carrier 2, a semiconductor chip 10 arranged on the carrier 2, and a housing 17 molded onto the carrier 2 and the semiconductor chip 10. All housing walls 17C are offset laterally inwards at a first main surface 2A of the carrier 2 relative to an edge 3 of the carrier 2 and have a lateral spacing a from the carrier edge 3 that is greater than zero. The lateral spacing a can increase continuously in the vertical direction V, so that the housing walls 17C extend at an angle greater than 0° and less than 90° relative to the first main surface 2A of the carrier 2.

[0091] Due to the lateral spacing of all housing walls 17C, the carrier 2 has an edge region along the carrier edge 3 at the first main face 2A which is not covered by housing material and which is free of housing material during separation from the composite and can be separated more easily.

[0092] The carrier 2 has an opening 9 into which the housing 17 extends, so that the opening 9 is filled with the housing material. For example, the opening 9 is used as a filling opening during the production of the housing 17, through which the molding compound is introduced into the cavity. It is possible that the carrier 2 has a plurality of openings 9 into which the housing 17 extends (not shown).

[0093] The opening 9 extends from the first main surface 2A of the carrier 2 through the carrier 2 to the second main surface 2B of the carrier 2. The opening 9 is larger at the second main surface 2B than at the first main surface 2A and has a multi-angle and multi-level cross section parallel to a plane extending through the vertical direction V and the first lateral direction L1 (see Figure 2A ). By virtue of the opening 9 widening toward the second main face 2B, the housing material arranged therein and thus the housing 17 as a whole can be anchored particularly well in the carrier 2. Furthermore, the opening 9 can have a circular cross section parallel to a plane extending through the first lateral direction L1 and the second lateral direction L2 (see Figure 2B ).

[0094] The opening 9 is arranged in a space-saving manner in the gap 7 which is present anyway between the first and second joining elements 5 , 6 . In this case, the housing material arranged in the opening 9 is embedded in the base material 8 arranged in the gap 7 .

[0095] Combination Figure 2A and 2B The described radiation-emitting semiconductor component 1 may also have all the features and advantages mentioned in conjunction with the further exemplary embodiments.

[0096] according to Figure 3 and 4 Further exemplary embodiments of a radiation-emitting semiconductor component 1 are explained in more detail.

[0097] As in Figure 3 , the luminous area, which may correspond in size to the first lateral dimension c3 and the second lateral dimension b3 of the recess 18 on the front side 1A, may be similarly large to the radiation exit area 10A of the semiconductor chip 10. Compared to the previous exemplary embodiments in which the luminous area is smaller than the radiation exit area 10A, the luminous flux can be increased here.

[0098] As in Figure 4 As shown in , the luminous area, which can correspond in its size range to the first lateral dimension c3 and the second lateral dimension b3 of the recess 18 on the front side 1A, can also be larger than the radiation exit area 10A of the semiconductor chip 10, so that in principle all customer requirements for the size of the luminous area can be taken into account.

[0099] Combination Figure 3 and 4 The described radiation-emitting semiconductor component 1 may also have all the features and advantages mentioned in conjunction with the further exemplary embodiments.

[0100] according to Figure 5 A further exemplary embodiment of a radiation-emitting semiconductor component 1 is explained in detail. The radiation-emitting semiconductor component 1 comprises a carrier 2 having an opening 9, which has an elliptical cross section parallel to a plane extending through the first lateral direction L1 and the second lateral direction L2. Furthermore, the opening 9 can be parallel to a plane extending through the vertical direction V (cf. Figure 6 ) and a plane spanning the first lateral direction L1 has a trapezoidal or multi-step cross section. The radiation-emitting semiconductor component 1 may also have all the features and advantages mentioned in conjunction with the other exemplary embodiments.

[0101] according to Figure 6A further exemplary embodiment of a radiation-emitting semiconductor component 1 is explained in detail. The radiation-emitting semiconductor component 1 comprises a carrier 2 having an opening 9 which is smaller at the second main surface 2B than at the first main surface 2A and has a multi-step cross section parallel to a plane spanned by the vertical direction V and the first lateral direction L1. The opening 9 is particularly suitable as a fill-in opening during the production of the housing 17, through which the molding compound is introduced into the cavity. The radiation-emitting semiconductor component 1 can also have all the features and advantages mentioned in conjunction with the further exemplary embodiments.

[0102] According to Figure 7 to Fig.18 A method for producing a radiation-emitting semiconductor component 1 such as is explained in detail, for example, in conjunction with the preceding figures is described. Furthermore, possible variants of the method are described.

[0103] The method comprises providing a carrier assembly 20 having a carrier body 21 and a base material 8 (see Fig. 7E Providing the carrier assembly 20 may comprise the step of providing a carrier body 21 having recesses 22A, 22B (see Fig. 7A ). By means of the recesses 22A, 22B, the carrier body 21 can have regions separated from one another, which can be held together by the support structure 23. For example, the carrier body 21 can be a lead frame assembly. However, it is also possible that the carrier body 21 is an assembly consisting of a printed circuit board or a assembly consisting of a ceramic substrate. The recess 22A can be designed to form a gap 7 between the bonding elements 5, 6 of different polarity in the carrier 2 separated from the carrier assembly 20 (see Fig. 7E The recess 22B may be designed to separate the joining elements 5 , 6 of different carriers 2 to be separated from each other via a gap.

[0104] Furthermore, providing the carrier composite 20 can include the step of introducing the base material 8 into the recesses 22A, 22B (see Figure 7C ). For example, the base material 8 is introduced into the recesses 22A, 22B by means of vacuum injection molding, wherein a molding tool 24 is provided with a first tool half 25 and a second tool half 26, between which a carrier body 26 is arranged, so that a first surface 21A of the carrier body 21 is covered by the first tool half 25 and a second surface 21B of the carrier body 21 is covered by the second tool half 26 (see Figure 7B). A vacuum E is generated in the molding tool 24 and the basic material 8 is injected into the recesses 22A, 22B at a filling pressure F, for example, between 0.1 bar and 0.5 bar. The injection can be carried out at room temperature. The basic material 8 can be different from the molding compound 32 of the housing. The basic material 8 can be a plastic material, for example an epoxy resin. Epoxy resin is so hard compared to silicone that the subsequent separation of the carrier 2 can be carried out in a simplified manner, for example by a sawing process, through the epoxy-filled recess 22B.

[0105] The first tool half 25 can be designed to be flat. The second tool half 26 can also be designed to be flat or have a protruding component 26A (see Figure 7B ), if, for example, an opening 9 is to be produced in the carrier 2 to be separated (see Fig. 7E The protruding components 26A can each engage in the recess 22A, so that the recess 22A is only partially filled with the base material 8, while the recess 22B is completely filled (see Figure 7C ). For example, the tool halves 25, 26 can be produced by means of additive manufacturing, so that even more complex geometries can be realized, such as, for example, in the protruding component 26A, which gives the opening 9 a shape suitable, for example, for filling in an opening or an anchoring structure. For example, the tool halves 25, 26 can include or consist of polydimethylsiloxane (PDMS).

[0106] As in Fig.7D As indicated by the star symbol in FIG. 8 , the basic material 8 can be hardened by the action of light, for example UV light. In addition, it is also possible to harden the basic material 8 during demoulding (see FIG. 8 ). Fig. 7E ) followed by thermal hardening of the base material 8.

[0107] After the carrier assembly 20 has been provided, radiation-emitting semiconductor chips 10 are applied thereto, wherein the radiation-emitting semiconductor chips 10 each have a radiation exit face 10A which is arranged on a side facing away from the carrier assembly 10 (see Figure 8 ). For example, one semiconductor chip 10 is mounted on each second bonding element 6 and connected to an adjacent first bonding element 5 by means of a connecting means 15 .

[0108] In order to manufacture the housing 17 (see FIGS. 1 to 3) Figure 6 ), the method further comprising: providing a further molding tool 27 having cavities 28 and arranging the carrier assembly 20 with the semiconductor chips 10 applied thereon relative to the molding tool 27 such that a semiconductor chip 10 is arranged in each cavity 28 (see Fig. 9). If the carrier assembly 20 furthermore has an opening 9, the molding tool 27 can comprise a channel 29 which, after the carrier assembly 20 has been introduced into the molding tool 27, is located on the back side 20B of the carrier assembly 20 facing away from the semiconductor chip 10 and is open toward the opening 9. For example, the molding tool 27 can have a first tool half 30 with a cavity 28 and a second tool half 31 with a channel 29, wherein the carrier assembly 20 with the semiconductor chip 10 arranged thereon is inserted between the two tool halves 30, 31.

[0109] The molding tool 27 or its components, such as, for example, the first tool half 30 and the second tool half 31, can be produced by means of additive manufacturing. It is thus possible to realize chambers 28 and channels 29 with relatively complex geometries. For example, the tool halves 30, 31 can contain polydimethylsiloxane (PDMS) or consist thereof. The surfaces of the tool halves 30, 31 formed by PDMS are characterized by a high surface quality.

[0110] The method also includes filling the cavity 28 with a molding compound 32 (see Fig.10 ) to manufacture the housing 17 (see FIGS. 1 to 3). Figure 6 ), wherein, in order to produce the recess 18 in the housing 17, the semiconductor chips 10 are respectively covered by a component 27A of the molding tool 27 at the radiation exit surface 10A, and wherein, in order to produce a separating groove 33 between each two adjacent housings 17, each two adjacent cavities 28 are spaced apart from one another by a further component 27B of the molding tool 27. If the carrier assembly 20 has an opening 9, the cavities 28 can be filled from the back side 20B by means of a channel 29, wherein the molding compound 32 is introduced into the channel 29 and from the channel through the opening 9 into the cavity 28 (see arrows). The opening 9 can also be filled with molding compound so that the housing 17 respectively protrudes into the associated opening 9 and can thus be anchored in the carrier 2 (see Fig.16 ).

[0111] The molding compound 32 has the same material composition as the base material and may accordingly contain a plastic material, for example silicone, and a reflective material, for example particles of TiO 2 and / or ZrO 2 .

[0112] The housing 17 is preferably produced by means of vacuum injection molding (VIM). Here, the molding compound 32 is injected into the cavity 28, in which a vacuum E is generated. The filling pressure F prevailing during the injection can be between 0.1 bar and 0.5 bar. By means of vacuum injection molding, it is possible, as already described in conjunction with FIGS. 1 to 3 , to produce a vacuum E in the cavity 28. Figure 6As described, small housing dimensions with high precision and sharp edges are achieved. Another advantage is that the formation of bubbles, which usually make the housing 17 susceptible to cracking, can be prevented, so that the housing 17 and also the semiconductor component 1 are relatively stable.

[0113] When filling the cavity 28 with the molding compound 32 , the second surface 21B of the carrier body 21 can be covered in the region of the joining elements 5 , 6 by the second tool half 31 or a component of the molding tool 27 and thus protected from the molding compound 32 so that the joining elements 5 , 6 are not covered by the electrically insulating film.

[0114] As from Fig.11 It is known that in order to protect the joining elements 5, 6 from the molding compound 32 and thus from the electrically insulating film, the second tool half 31 can be designed in two parts and have a base plate 31A and an intermediate plate 31B, wherein the intermediate plate 31B is arranged between the carrier composite 20 and the base plate 31A and covers the back side 20B of the carrier composite 20 except for the opening 9 for protection. The channel 29 here extends between the base plate 31A and the intermediate plate 31B through the intermediate plate 31B to the opening 9. The base plate 31A and the intermediate plate 31B can each be manufactured from PDMS by means of additive manufacturing, which has the advantages mentioned above.

[0115] The method can also include a step of curing the molding compound 32 arranged in the cavity 28. This can be done, as indicated by the asterisk, by means of UV light.

[0116] As in Fig.12 As shown in , hardening can be performed on one side from the upper side of the molding tool 27, that is, from the side of the first tool half 30. In this case, uncured molding compound 32 remains in the channel 29 when the molding tool 27 is removed, so that undesirable residues of molding compound 32 on the back side 20B of the carrier composite 20 can be removed in this way (see Fig.13 ).

[0117] Alternatively, hardening can be performed on both sides from the upper and lower sides of the molding tool 27, that is, from the sides of the first tool half 30 and the second tool half 31. In this case, the molding compound 32 is hardened in the channel 29. The second tool half 31 has an adhesive film 31C, which adheres to the hardened molding compound 32, so that the hardened molding compound 32 is removed together with the second tool half 31 (see Fig.14 ).

[0118] Alternatively, hardening can be carried out on both sides, starting from the top and bottom of the molding tool 27, that is, starting from the sides of the first tool half 30 and the second tool half 31, without the aid of an adhesive film, so that, as in Fig.15As shown in FIG. 1 , when the molding tool 27 is removed, residues of the molding compound 32 remain on the back side 20B of the carrier assembly 20 , which residues are subsequently removed so that the carrier assembly 20 no longer has any residues on the back side 20B (see FIG. 1 ). Fig.16 ).

[0119] As in Fig.16 , it is shown that after the removal of the molding tool 27, a plurality of housings 17 are arranged on the front side 20A of the carrier assembly 20 opposite the back side 20B, said housings being respectively molded onto the semiconductor chip 10 and the carrier assembly 20 and having a recess 18. Between two adjacent housings 17 there is respectively a separating trench 33, which is designed to be so wide that after separation, housing walls 17C of the housings 17 adjoining the separating trench are at least partially laterally offset inwardly relative to the edge 3 of the carrier 2 delimiting the first main surface 2A, onto which the housings 17 are molded (see FIGS. 1 to 6 ).

[0120] The separation groove 33 has a width w which corresponds to the doubled lateral distance a of the housing wall 17C from the edge 3 of the carrier 2 (see FIGS. 1 to 3). Figure 6 ). For example, the width w of the separation groove 33 decreases with increasing depth, that is to say in the opposite direction to the vertical direction V. The separation groove 33 can thus taper in the direction of the carrier assembly 20. Accordingly, the housing wall 17C can be inclined in the finished semiconductor component 1, that is to say, it can extend neither at right angles to the first main surface 2A of the carrier 2 nor parallel to the first main surface 2A of the carrier 2. Furthermore, the separation groove 33 can have a depth t, which corresponds to at least 50% of the height of the housing wall, wherein the depth describes the dimension along the negative vertical direction V and the height describes the dimension along the negative vertical direction V.

[0121] The width w or the depth t of the separating groove 33 is selected in particular such that during separation no or only a small amount of the housing material which respectively forms the housing 17 has to be cut off. In particular, the separating groove 33 is free of silicone. As a result, separation can be performed without a previous step for removing the silicone in a single-stage process, for example by sawing.

[0122] As in Fig. 17B In the schematic top view shown and in Fig.17A Along the Fig. 17B The schematic view of the cross section of the line AA shown in FIG. 1 shows that the method can include the step of introducing a filler 19 into the recess 18. For example, the filler 19 can be introduced into the recess 18 by means of a dispenser. As already mentioned above, the filler 19 can contain a conversion material. The filler 19 can also have the structural properties and material properties described above.

[0123] The method further comprises the step of separating the carrier assembly 20 with the semiconductor chips 10 applied thereon and the molded housing 17 through corresponding separating trenches 33, wherein the carriers 2 of the radiation-emitting semiconductor components 1, each having a first main surface 2A on which at least one semiconductor chip 10 and a housing 17 are arranged, are separated from the carrier assembly 20, so that a plurality of radiation-emitting semiconductor components 1 (see Fig.18 ). The division or separation that can be performed by means of sawing is essentially limited to the division or separation of the carrier assembly 20, since the housing 17 is separated by corresponding separation grooves 33, so that only a small amount of housing material or no housing material has to be cut off. Advantageously, the formation of the separation grooves 33 obviates the need for a previous process for removing housing material. In addition, the base material 8 of the carrier assembly 20, which can be harder than the housing material, is easier to cut off, so that the method is designed to be efficient overall.

[0124] The invention is not restricted by the description based on the exemplary embodiments. Rather, the invention comprises any novel features and any combination of features, which in particular includes any combination of features in the claims, even if the feature or the combination itself is not described in detail in the claims or exemplary embodiments.

[0125] Reference numerals list

[0126] 1 Radiation-emitting semiconductor devices

[0127] 1A Front

[0128] 1B Back

[0129] 2 Carrier

[0130] 2A First main surface

[0131] 2B Second main surface

[0132] 2C Side

[0133] 3 Carrier edge

[0134] 4 Carrier substrate

[0135] 4C side

[0136] 5 First engagement element

[0137] 6 Second engagement element

[0138] 7 Gap

[0139] 8 Basic Materials

[0140] 9 Opening

[0141] 10. Semiconductor Chip

[0142] 10A Radiation exit surface

[0143] 10B Bottom

[0144] 10C Side

[0145] 11. First semiconductor region

[0146] 12 Active area

[0147] 13. Second semiconductor region

[0148] 14 Electrical contacts

[0149] 15, 16 connection mechanism

[0150] 17 Housing

[0151] 17A Upper side of housing

[0152] 17B Housing bottom

[0153] 17C Shell wall

[0154] 18 Depression

[0155] 19 Filling

[0156] 20 Carrier composite

[0157] 20A front

[0158] 20B Back

[0159] 21 Carrier body

[0160] 21A First surface

[0161] 21B Second surface

[0162] 22A, 22B notch

[0163] 23 Support structure

[0164] 24 Forming tools

[0165] 25 First tool half

[0166] 26 Second tool half

[0167] 26A Prominent components

[0168] 27 Forming tools

[0169] Components of 27A, 27B

[0170] 28 Chamber

[0171] 29 channels

[0172] 30 First tool half

[0173] 31 Second tool half

[0174] 31A base plate

[0175] 31B Middle Plate

[0176] 31C Adhesive Film

[0177] 32 Molding Compound

[0178] 33 Separation tank

[0179] a Horizontal spacing

[0180] b, b2, b3 first lateral dimension

[0181] c1, c2, c3 second horizontal dimension

[0182] d Thickness

[0183] h Height

[0184] t Depth

[0185] w Width

[0186] E Vacuum

[0187] F Filling pressure

[0188] L1 First transverse direction

[0189] L2 Second lateral direction

[0190] V vertical direction

Claims

1. A radiation-emitting semiconductor device (1), comprising: a carrier (2) having a first main surface (2A) and at least one side surface (2C) extending transversely to the first main surface (2A), at least one semiconductor chip (10) which is arranged on the first main surface (2A) of the carrier (2) and which, during operation, emits radiation at a radiation exit surface (10A), - a housing (17), said housing - molded onto the carrier (2) and the at least one semiconductor chip (10), wherein the at least one side surface (2C) of the carrier (2) is not covered by the housing (17), - has a recess (18) which is arranged at the radiation exit surface (10A) of the at least one semiconductor chip (10), and - is laterally delimited by at least one housing wall (17C), The at least one housing wall (17C) is at least partially offset laterally in the direction of the depression (18) relative to an edge (3) of the carrier (2) that delimits the first main surface (2A).

2. The radiation-emitting semiconductor component (1) as claimed in claim 1, wherein the housing (17) is a housing which is molded by means of vacuum injection molding. 3 . The radiation-emitting semiconductor component ( 1 ) as claimed in claim 1 , wherein the housing ( 17 ) is formed from a housing material which contains a reflective material.

4. The radiation-emitting semiconductor component (1) as claimed in claim 1, wherein the reflective material comprises particles of TiO2 and / or ZrO2. 5 . The radiation-emitting semiconductor component ( 1 ) as claimed in claim 1 , wherein the housing material contains a plastic material. 6 . The radiation-emitting semiconductor component ( 1 ) as claimed in claim 1 , wherein a filler ( 19 ) is arranged in the recess ( 18 ).

7. The radiation-emitting semiconductor component (1) as claimed in claim 1, wherein the filler (19) contains a conversion material which is provided for wavelength conversion of the radiation. 8 . The radiation-emitting semiconductor component as claimed in claim 1 , wherein the carrier ( 2 ) has an opening ( 9 ) into which the housing ( 17 ) extends.

9. The radiation-emitting semiconductor component (1) according to claim 1, wherein the opening (9) extends from the first main surface (2A) of the carrier (2) through the carrier (2) to a second main surface (2B) of the carrier (2) which is opposite to the first main surface (2A).

10. The radiation-emitting semiconductor component (1) as claimed in claim 1, wherein the opening (9) is larger at the second main area (2B) than at the first main area (2A).

11. A radiation-emitting semiconductor component (1) according to any one of claims 8 to 10, wherein the carrier (2) has a first bonding element (5) of a first polarity and a second bonding element (6) of a second polarity, the second bonding element being separated from the first bonding element (5) by a gap (7), wherein the opening (9) is arranged in the gap (7). 12 . The radiation-emitting semiconductor component ( 1 ) as claimed in claim 1 , wherein the recess ( 18 ) does not project laterally beyond the at least one semiconductor chip ( 10 ) on a side facing the at least one semiconductor chip.

13. A radiation-emitting semiconductor device (1) according to any of the preceding claims, wherein the recess (18) extends from a housing upper side (17A) arranged on a side of the housing (17) facing away from the carrier (2) to the radiation exit surface (10A) of the at least one semiconductor chip (10) and terminates at the radiation exit surface (10A).

14. A method for producing a radiation-emitting semiconductor device (1), comprising: - providing a carrier composite (20), - applying radiation-emitting semiconductor chips (10) to the carrier assembly (20), wherein the radiation-emitting semiconductor chips (10) each have a radiation exit area (10A), - providing a forming tool (27) having a cavity (28), - arranging the carrier assembly (20) with the radiation-emitting semiconductor chips (10) applied thereon relative to the molding tool (27) in such a way that at least one radiation-emitting semiconductor chip (10) is arranged in each cavity (28), - filling the cavities (28) with a molding compound (32) to produce a housing (17), wherein the radiation-emitting semiconductor chips (10) are respectively covered at the radiation exit surface (10A) by a component (27A) of the molding tool (27) to produce a recess (18) in the housing (17), and wherein every two adjacent cavities (28) are spaced apart from one another by a further component (27B) of the molding tool (27) to produce a separating groove (33) between every two adjacent housings (17), - dividing the carrier assembly (20) together with the radiation-emitting semiconductor chip (10) applied thereon and the molded housing (17) through corresponding separation grooves (33), wherein the carrier (2) of the radiation-emitting semiconductor component (1) is separated from the carrier assembly, the carriers each having a first main surface (2A) on which at least one radiation-emitting semiconductor chip (10) is arranged, and wherein the separation grooves (33) are each designed to be so wide that a housing wall (17C) of the housing (17) adjacent to the separation grooves is offset at least partially laterally in the direction of the recess (18) after the separation relative to an edge (3) of the carrier (2) that delimits the first main surface (2A) and to which the housing (17) is molded.

15. The method according to the preceding claim, wherein the housing (17) is produced by means of vacuum injection molding.

16. The method according to claim 1, wherein the components (30, 31, 31A, 31B) of the forming tool (27) which delimit the chamber (28) are produced by means of additive manufacturing.

17. The method according to any one of claims 14 to 16, wherein the filler (19) is introduced into the depression (18) by means of a dispenser.

18. The method according to claim 14, wherein the carrier composite (20) has an opening (9) and each carrier (2) to be separated is associated with at least one opening (9), wherein the molding compound (32) is introduced into the cavity (28) through the opening (9).

19. The method according to any one of claims 14 to 18, wherein providing the carrier composite (20) comprises: - providing a carrier (21) having recesses (22A, 22B), - introducing a base material (8) into the recesses (22A, 22B), wherein the base material (8) is introduced by means of vacuum injection molding.

20. Method according to the two preceding claims, wherein the opening (9) is produced in the base material (8) of a portion of the recess (22A).

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