A polishing agent and a polishing method

Abstract

This invention provides a polishing agent and a polishing method. The polishing agent comprises, by weight, 5-25 parts of a film-forming agent, 10-25 parts of sulfuric acid, 40-80 parts of a brightener, 0.1-2 parts of sodium m-nitrobenzenesulfonate, and 1-25 parts of a reducing acid. The film-forming agent includes at least one of dimethylaminoformamide and 2-aminobenzamide. It can replace the role of phosphoric acid and nitric acid, and even with low acid content and without the addition of phosphoric acid and nitric acid, it can still enhance the adsorption of the aluminum product surface to the chemical polishing bath, forming a high-viscosity film layer on the aluminum product surface. This prevents substances within the film from diffusing into the surrounding polishing bath, thus controlling the reaction. Furthermore, it can improve the brightness and smoothness of the coating, inhibit yellowing, accelerate the reaction rate, shorten the chemical polishing time, accelerate the dissolution of protruding parts, reduce pinhole defects, and does not produce large amounts of yellow smoke or irritating gases. The wastewater is phosphorus-free, making it environmentally friendly and human-friendly, while achieving excellent polishing results.

Description

Technical Field

[0001] This invention belongs to the field of aluminum alloy polishing technology, specifically relating to a polishing agent and polishing method. Background Technology

[0002] Aluminum is abundant in nature. As a non-ferrous metal, its alloys have advantages such as light weight, good thermal conductivity, good ductility, and ease of processing, making them widely used in many fields such as aerospace, machinery manufacturing, and chemical industry. However, aluminum itself has low hardness and poor wear resistance, making it susceptible to damage during machining, resulting in surface defects such as scratches and wear. These defects affect the smoothness and decorative properties of the aluminum surface, and may even lead to localized corrosion at the surface defects, affecting the chemical stability of the aluminum material.

[0003] In actual processing, to eliminate surface defects in aluminum alloys and meet various appearance requirements, such as matte or bright mirror finishes, surface treatment is often necessary. Surface polishing is an important means of eliminating surface defects and enhancing the appearance of aluminum products. Surface polishing can be used not only as the final treatment of aluminum surfaces but also as a pretreatment process for aluminum anodizing and electroless plating. Generally speaking, there are only three surface polishing processes for aluminum: mechanical polishing, electrolytic polishing, and chemical polishing. The working principles and conditions of these three polishing processes differ significantly. In chemical polishing, aluminum dissolves in ionic form and enters the solution, accumulating near the surface of the product. This increases the viscosity of the solution on the product surface, leading to a decrease in the dissolution rate of aluminum. Because the specific gravity of the viscous liquid in the depressions of the product surface is relatively high, it easily deposits in the depressions of the aluminum parts, so the depressions of the product surface are approximately in a passivated state. On the other hand, the viscous liquid layer on the protruding parts of the surface is very thin, so the protruding parts are easily dissolved by contact with fresh solution. Furthermore, during the melting process, the crystal deformation layer and larger, irregularly arranged grains produced during mechanical polishing are dissolved first, resulting in a more orderly crystal arrangement and denser, finer grains on the surface of the part. Therefore, the higher the passivity and the finer the grains on the aluminum surface, the higher the quality of the chemical polishing.

[0004] Chemical polishing typically uses a tri-acid polishing solution (H2SO4-H3PO4-HNO3 system), which is a chemical polishing solution prepared by mixing three acids in a certain proportion. The chemical polishing process using this tri-acid polishing solution appeared relatively early and is conventionally called traditional tri-acid polishing. Aluminum products polished with tri-acids have good corrosion resistance, long-lasting gloss retention, do not produce a crystal deformation layer, and are less prone to the introduction of other impurities.

[0005] However, in the traditional tri-acid chemical polishing system, the presence of nitric acid produces highly toxic yellow fumes (NO). xThe presence of phosphoric acid produces a large amount of phosphates, polluting the water. Therefore, the traditional three-acid chemical system not only pollutes the ecological environment but also harms human health.

[0006] Therefore, it is of great significance to develop a polishing agent that is environmentally friendly and easy to treat, does not produce yellow smoke during operation, causes little harm to the human body, and can ensure excellent polishing effect. Summary of the Invention

[0007] This invention provides a polishing agent to solve the problem that existing tri-acid polishing systems easily generate yellow smoke, phosphorus-containing waste liquid, and other environmental pollutants.

[0008] This invention provides a polishing method in which the above-mentioned polishing agent is used in the polishing process. The waste liquid is environmentally friendly and easy to treat, the operation process does not produce yellow smoke, causes little damage to the human body, and can achieve excellent polishing effect.

[0009] In a first aspect, the present invention provides a polishing agent comprising, by weight: 5-25 parts of an adhesive agent, 10-25 parts of sulfuric acid, 40-80 parts of a brightener, 0.1-2 parts of sodium m-nitrobenzenesulfonate, and 1-25 parts of a reducing acid;

[0010] The mucosal agent includes at least one of dimethylaminocarbamate and 2-aminobenzamide.

[0011] Further, the adhesive comprises 5 to 20 parts by weight of the adhesive; and / or,

[0012] The sulfuric acid is included in 10-20 parts by weight; and / or,

[0013] The product comprises 50-70 parts by weight of the brightener; and / or,

[0014] Sodium m-nitrobenzenesulfonate 0.1~1 part.

[0015] Furthermore, by weight, it also includes: 0.001 to 0.01 parts of sodium dodecyl sulfate, 0.001 to 0.02 parts of corrosion inhibitor, and 0.5 to 2 parts of activator.

[0016] Furthermore, the brightening agent includes at least one of acetic acid and propionic acid; and / or,

[0017] Reducing acids include at least one of salicylic acid, glyoxylic acid, glucuronic acid, and hypophosphorous acid; and / or,

[0018] Corrosion inhibitors include at least one of dimercaptobenzothiazole, quinoline sulfonic acid, and 8-hydroxy-5-quinoline sulfonic acid; and / or,

[0019] The activator includes at least one of nickel sulfate and aluminum sulfate.

[0020] Further, the polishing agent comprises, by weight: 5-20 parts of dimethylaminoformamide, 10-20 parts of sulfuric acid, 50-70 parts of propionic acid, 0.1-1 parts of sodium m-nitrobenzenesulfonate, 0.001-0.01 parts of sodium dodecyl sulfate, 1-10 parts of salicylic acid, 1-5 parts of glyoxylic acid, 0.001-0.01 parts of dimercaptobenzothiazole, 0.001-0.01 parts of quinoline sulfonic acid, 0.001-0.1 parts of nickel sulfate, and 0.5-2 parts of aluminum sulfate.

[0021] Furthermore, the polishing agent also includes a silicon remover.

[0022] Furthermore, the silicon remover includes at least one of ammonium bifluoride or ammonium fluoride.

[0023] Furthermore, the mass fraction of the silicon remover in the polishing agent is 0.01 to 0.05 parts.

[0024] Secondly, the present invention provides a polishing method in which the polishing agent described in the first aspect participates in the polishing process.

[0025] Furthermore, the mass ratio of the material to be polished to the polishing agent in the polishing process is 1:(10~100).

[0026] Furthermore, the polishing process is carried out at a temperature of 75~90℃ for a time of 40~120s.

[0027] The polishing agent provided by this invention, through the synergistic effect of at least one of dimethylaminoformamide and 2-aminobenzamide as a film-forming agent (5-25 parts), sulfuric acid (10-25 parts), brightener (40-80 parts), sodium m-nitrobenzenesulfonate (0.1-2 parts), and reducing acid (1-25 parts), can replace the role of phosphoric acid and nitric acid. Even with low acid content and without the addition of phosphoric acid and nitric acid, it can still enhance the adsorption of the aluminum product surface to the chemical polishing bath, forming a high-viscosity film layer on the aluminum product surface. This prevents substances within the film from diffusing into the surrounding polishing bath, thus controlling the reaction. Furthermore, it can improve the brightness and smoothness of the coating, inhibit yellowing, accelerate the reaction rate, shorten the chemical polishing time, accelerate the dissolution of protruding parts, reduce pinhole defects, and does not produce large amounts of yellow smoke or irritating gases. The wastewater is phosphorus-free, making it environmentally friendly and human-friendly, while achieving excellent polishing results. Attached Figure Description

[0028] Figure 1 The material to be polished in Embodiment 1 of the present invention;

[0029] Figure 2 The material after chemical polishing treatment in Example 1 of this invention;

[0030] Figure 3 The material in Comparative Example 1 of this invention has undergone chemical polishing treatment;

[0031] Figure 4 The material in Comparative Example 7 of this invention has undergone chemical polishing treatment. Detailed Implementation

[0032] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below in conjunction with the embodiments of this invention. Obviously, the described embodiments are only some embodiments of this invention, not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0033] In a first aspect, the present invention provides a polishing agent comprising, by weight: 5-25 parts of an adhesive agent, 10-25 parts of sulfuric acid, 40-80 parts of a brightener, 0.1-2 parts of sodium m-nitrobenzenesulfonate, and 1-25 parts of a reducing acid;

[0034] The mucosal agent includes at least one of dimethylaminocarbamate and 2-aminobenzamide.

[0035] The polishing agent provided by this invention, through the synergistic effect of 5-20 parts of a film-forming agent (at least one of dimethylaminoformamide and 2-aminobenzamide), 10-20 parts of sulfuric acid, 50-70 parts of a brightener, 0.1-2 parts of sodium m-nitrobenzenesulfonate, and 1-25 parts of a reducing acid, can replace the role of phosphoric acid and nitric acid. Even with low acid content and without the addition of phosphoric acid and nitric acid, it can still enhance the adsorption of the aluminum product surface to the chemical polishing bath, forming a high-viscosity film layer on the aluminum product surface. This prevents substances within the film from diffusing into the surrounding polishing bath, thus controlling the reaction. Furthermore, it can improve the brightness and smoothness of the coating, inhibit yellowing, accelerate the reaction rate, shorten the chemical polishing time, accelerate the dissolution of protruding parts, reduce pinhole defects, and does not produce large amounts of yellow smoke or irritating gases. The wastewater is phosphorus-free, making it environmentally friendly and human-friendly, while achieving excellent polishing results.

[0036] Optionally, the polishing agent further includes, by weight, 5-20 parts of an adhesive agent, 10-20 parts of sulfuric acid, 50-70 parts of a brightener, and 0.1-1 parts of sodium m-nitrobenzenesulfonate; this can further activate the polishing agent, improve the reactivity of the polishing agent with the aluminum material, reduce pitting, pinholes, corrosion, and yellowing, improve the gloss and smoothness of the coating, and further improve the polishing effect.

[0037] Furthermore, by weight, it also includes: 0.001 to 0.01 parts of sodium dodecyl sulfate, 0.001 to 0.02 parts of corrosion inhibitor, and 0.5 to 2 parts of activator.

[0038] It is understandable that adding 0.001~0.01 parts of sodium dodecyl sulfate, 0.001~0.02 parts of corrosion inhibitor and 0.5~2 parts of activator can further activate the polishing agent, improve the reactivity of the polishing agent with aluminum, reduce pitting, pinholes, corrosion and yellowing, improve the gloss and smoothness of the coating, and further improve the polishing effect.

[0039] In one specific embodiment, the brightening agent includes at least one of acetic acid and propionic acid;

[0040] When at least one of acetic acid and propionic acid is used as the brightener, the gloss of the coating polishing can be further improved.

[0041] In one specific embodiment, the reducing acid includes at least one of salicylic acid, glyoxylic acid, and glucuronic acid;

[0042] The inventors discovered that when the reducing acid includes at least one of salicylic acid, glyoxylic acid, and glucuronic acid, it can further reduce pitting, pinholes, corrosion, and yellowing, improve the gloss and smoothness of the coating, and further improve the polishing effect; optionally, it can be further refined into salicylic acid and glyoxylic acid or glucuronic acid.

[0043] In one specific embodiment, the corrosion inhibitor includes at least one of dimercaptobenzothiazole, quinoline sulfonic acid, and 8-hydroxy-5-quinoline sulfonic acid;

[0044] When at least one of dimercaptobenzothiazole, quinoline sulfonic acid, and 8-hydroxy-5-quinoline sulfonic acid is used as a corrosion inhibitor, it can further reduce pitting, pinholes, pitting corrosion, and yellowing, improve the gloss and smoothness of the coating, and further improve the polishing effect; optionally, it can be further refined into dimercaptobenzothiazole and quinoline sulfonic acid and / or 8-hydroxy-5-quinoline sulfonic acid.

[0045] In one specific embodiment, the activator includes at least one of nickel sulfate and aluminum sulfate.

[0046] The activator can activate the polishing agent. The inventors discovered that when at least one of nickel sulfate and aluminum sulfate is added, the reactivity between the polishing agent and the aluminum material can be further improved, reducing pitting, pinholes, corrosion and yellowing, improving the gloss and smoothness of the coating, and further improving the polishing effect.

[0047] Specifically, the polishing agent comprises, by weight: 5-20 parts dimethylaminoformamide, 10-20 parts sulfuric acid, 50-70 parts propionic acid, 0.1-1 parts sodium m-nitrobenzenesulfonate, 0.001-0.01 parts sodium dodecyl sulfate, 1-10 parts salicylic acid, 1-5 parts glyoxylic acid, 0.001-0.01 parts dimercaptobenzothiazole, 0.001-0.01 parts quinoline sulfonic acid, 0.001-0.1 parts nickel sulfate, and 0.5-2 parts aluminum sulfate.

[0048] By specifically defining the types and proportions of polishing agent components, the adsorption capacity of aluminum product surface to chemical polishing bath can be further enhanced, forming a high-viscosity adhesive film layer on the aluminum product surface. This prevents substances within the film from diffusing into the surrounding polishing bath, thus controlling the reaction process. Furthermore, it can further improve the gloss and smoothness of the coating, suppress yellowing, accelerate the reaction rate, shorten the chemical polishing time, accelerate the dissolution of protruding parts, and reduce pinhole defects. Under conditions of low acid content and the absence of sulfuric acid and nitric acid, it achieves better polishing performance.

[0049] Optionally, the polishing agent may also include a silicone remover.

[0050] It is understandable that silicon is often added to aluminum alloys to enhance their performance. For silicon-aluminum alloys, polishing agents also include silicon removers, which can improve the polishing agent's ability to dissolve silicon and improve polishing performance.

[0051] In one specific embodiment, the silicon remover includes at least one of ammonium bifluoride or ammonium fluoride.

[0052] When the silicon remover includes at least one of ammonium bifluoride or ammonium fluoride, it can further improve the silicon dissolution ability of the polishing agent and enhance the polishing performance.

[0053] In one specific embodiment, the mass fraction of the silicon remover in the polishing agent is 0.01 to 0.05 parts.

[0054] When the mass fraction of the silicon remover in the polishing agent is 0.01~0.05 parts, it can further improve the polishing agent's ability to dissolve silicon, enhance polishing performance, further improve the gloss and smoothness of the coating, suppress yellowing and other phenomena, accelerate the reaction rate, shorten the chemical polishing time, accelerate the dissolution of protruding parts, reduce the generation of pinhole defects, and achieve better polishing performance.

[0055] Secondly, the present invention provides a polishing method in which the above-mentioned polishing agent is involved in the polishing process.

[0056] The chemical polishing method provided by this invention allows the aforementioned polishing agent to participate in the polishing process. Even with low acid content and without the addition of phosphoric acid or nitric acid, it can still enhance the adsorption of the aluminum product surface to the chemical polishing bath solution, forming a high-viscosity adhesive film layer on the aluminum product surface. This prevents substances within the film from diffusing into the surrounding polishing bath solution, thus controlling the reaction process. Furthermore, it improves the brightness and smoothness of the coating, inhibits yellowing, accelerates the reaction rate, shortens the chemical polishing time, speeds up the dissolution of protruding parts, reduces pinhole defects, and does not produce large amounts of yellow smoke or irritating gases. The wastewater is phosphorus-free, making it environmentally friendly and human-friendly, while achieving excellent polishing results.

[0057] Furthermore, the mass ratio of the material to be polished to the polishing agent in the polishing process is 1:(10~100).

[0058] By further limiting the mass ratio of the material to be polished to the polishing agent, phenomena such as pitting, pinholes, corrosion, and yellowing are reduced, improving the gloss and smoothness of the coating and further enhancing the polishing effect.

[0059] In one specific embodiment, the polishing process is carried out at a temperature of 75~90°C for a time of 40~120 seconds.

[0060] By further limiting the temperature and time of the polishing process, the polishing effect can be further improved, excessive damage to the material to be polished can be prevented, and polishing efficiency can be increased.

[0061] The polishing agent and polishing method provided by the present invention will be described in detail below through specific embodiments.

[0062] Example 1

[0063] In this embodiment, the material to be polished is 13.6g of 5052 aluminum alloy sheet with dimensions of 100*100*0.5mm. Figure 1 As shown.

[0064] The polishing method includes the following steps:

[0065] (1) Soak the material to be polished in a neutral degreasing solution with a pH of 7, perform ultrasonic degreasing for 10 minutes, and then wash it with water three times to obtain the pretreated aluminum alloy.

[0066] (2) Place 13.6g of pretreated aluminum alloy in 3L of polishing agent and polish at 82℃ for 90s. Then rinse with water three times, blow dry and observe the appearance; the treated material is as follows. Figure 2 As shown;

[0067] The polishing agent, by weight, comprises: 15 parts dimethylaminoformamide, 16 parts sulfuric acid, 60 parts propionic acid, 0.5 parts sodium m-nitrobenzenesulfonate, 0.003 parts sodium dodecyl sulfate, 5 parts salicylic acid, 2 parts glyoxylic acid, 0.005 parts dimercaptobenzothiazole, 0.01 parts quinoline sulfonic acid, 0.05 parts nickel sulfate, 1 part aluminum sulfate, and 0.05 parts ammonium bifluoride.

[0068] Example 2

[0069] The difference between this embodiment and Embodiment 1 is that the polishing agent, by weight, comprises: 7.886 parts dimethylaminoformamide, 20 parts sulfuric acid, 69.5 parts propionic acid, 0.1 parts sodium m-nitrobenzenesulfonate, 0.001 parts sodium dodecyl sulfate, 1 part salicylic acid, 1 part glyoxylic acid, 0.001 parts dimercaptobenzothiazole, 0.001 parts quinoline sulfonic acid, 0.001 parts nickel sulfate, 0.5 parts aluminum sulfate, and 0.01 parts ammonium bifluoride.

[0070] Example 3

[0071] The difference between this embodiment and Embodiment 1 is that the polishing agent, by weight, comprises: 20 parts dimethylaminoformamide, 20 parts sulfuric acid, 45.99 parts propionic acid, 1 part sodium m-nitrobenzenesulfonate, 0.01 parts sodium dodecyl sulfate, 7.83 parts salicylic acid, 3 parts glyoxylic acid, 0.01 parts dimercaptobenzothiazole, 0.01 parts quinoline sulfonic acid, 0.1 parts nickel sulfate, 2 parts aluminum sulfate, and 0.05 parts ammonium bifluoride.

[0072] Example 4

[0073] The difference between this embodiment and Embodiment 1 is that the polishing agent, by weight, includes: 20 parts dimethylaminoformamide, 20 parts sulfuric acid, 53.597 parts acetic acid, 0.1 parts sodium m-nitrobenzenesulfonate, 4 parts glucuronic acid, 0.003 parts sodium dodecyl sulfate, 0.005 parts 8-hydroxy-5-quinoline sulfonic acid, and 0.8 parts aluminum sulfate.

[0074] Example 5

[0075] The difference between this embodiment and Embodiment 1 is that the polishing agent, by weight, includes: 20 parts dimethylaminoformamide, 20 parts sulfuric acid, 50 parts acetic acid, 0.1 parts sodium m-nitrobenzenesulfonate, and 10 parts glyoxylic acid.

[0076] Example 6

[0077] The difference between this embodiment and Embodiment 1 is that 60 parts of propionic acid are replaced with 60 parts of lactic acid.

[0078] Example 7

[0079] The difference between this embodiment and Embodiment 1 is that 5 parts of salicylic acid and 2 parts of glyoxylic acid are replaced with 7 parts of oxalic acid.

[0080] Example 8

[0081] The difference between this embodiment and Embodiment 1 is that 0.005 parts of dimercaptobenzothiazole and 0.01 parts of quinoline sulfonic acid are replaced with 0.015 parts of thiourea.

[0082] Example 9

[0083] The difference between this embodiment and Embodiment 1 is that 0.05 parts of nickel sulfate and 1 part of aluminum sulfate are replaced with 1.05 parts of aluminum chloride.

[0084] Example 10

[0085] The difference between this embodiment and Embodiment 1 is that ammonium hydrogen fluoride is not added.

[0086] Example 11

[0087] The difference between this embodiment and Embodiment 1 is that 0.05 parts of ammonium bifluoride are replaced with 0.05 parts of hydrofluoric acid.

[0088] Example 12

[0089] The difference between this embodiment and embodiment 1 is that the polishing time in step (2) is 30s.

[0090] Example 13

[0091] The difference between this embodiment and embodiment 1 is that the polishing temperature in step (2) is 70°C.

[0092] Comparative Example 1

[0093] The difference between this comparative example and Example 1 is that dimethylaminoformamide is not added. The treated material is as follows: Figure 3 As shown.

[0094] Comparative Example 2

[0095] The difference between this comparative example and Example 1 is that the amount of dimethylaminoformamide added is 3 parts.

[0096] Comparative Example 3

[0097] The difference between this comparative example and Example 1 is that the amount of sulfuric acid added is 5 parts.

[0098] Comparative Example 4

[0099] The difference between this comparative example and Example 1 is that sulfuric acid is not added.

[0100] Comparative Example 5

[0101] The difference between this comparative example and Example 1 is that propionic acid and glyoxylic acid are not added.

[0102] Comparative Example 6

[0103] The difference between this comparative example and Example 1 is that salicylic acid and glyoxylic acid are not added.

[0104] Comparative Example 7

[0105] The difference between this comparative example and Example 1 is that dimercaptobenzothiazole and quinoline sulfonic acid are not added. The treated material is as follows: Figure 4 As shown.

[0106] Comparative Example 8

[0107] The difference between this comparative example and Example 1 is that sodium m-nitrobenzenesulfonate is not added.

[0108] Comparative Example 9

[0109] The difference between this comparative example and Example 1 is that the polishing agent, by weight, comprises: 10 parts of sodium cocoyl hydroxyethyl sulfonate, 3 parts of 1-phenyl-5-mercaptotetrazole, 3 parts of sodium 3-mercapto-1-propane sulfonate, 0.1 parts of copper sulfate, 0.3 parts of sodium tungstate dihydrate, 1 part of corrosion inhibitor, 0.2 parts of surfactant, 25 parts of sulfuric acid, and 57.4 parts of deionized water; wherein, the chemical formula of the corrosion inhibitor is... R1 is hydroxyethyl, R2 is methyl; the chemical formula of the surfactant is R3 is isopropyl, R4 is p-methylphenyl, m=20, n=30.

[0110] Comparative Example 10

[0111] The difference between this comparative example and Example 1 is that the polishing agent, by weight, comprises: 20 parts of 98wt% sulfuric acid, 0.01 parts of sulfate, 1 part of organic acid salt, 0.05 parts of surfactant, and 0.1 parts of corrosion inhibitor; wherein, the sulfate is sodium sulfate and potassium sulfate in a weight ratio of 0.8:1; the organic acid salt is ammonium acetate and copper acetate in a weight ratio of 1:1; the surfactant is sodium tridecyl alcohol polyether-12 carboxylate, sodium tridecyl alcohol polyether-7 carboxylate, and nonylphenol polyoxyethylene (10) ether; the weight ratio of sodium tridecyl alcohol polyether-12 carboxylate and sodium tridecyl alcohol polyether-7 carboxylate is 5:0.3; the total weight ratio of nonylphenol polyoxyethylene (10) ether and sodium tridecyl alcohol polyether-12 carboxylate and sodium tridecyl alcohol polyether-7 carboxylate is 0.1:1; the nonylphenol polyoxyethylene (10) ether was purchased from Xingtai Xinlanxing Technology Co., Ltd.; the corrosion inhibitor is phenylthiourea and benzotriazole in a weight ratio of 1:3.

[0112] Comparative Example 11

[0113] The difference between this comparative example and Example 1 is that the amount of propionic acid added is 45 parts.

[0114] Comparative Example 12

[0115] The difference between this comparative example and Example 1 is that the amount of sodium m-nitrobenzenesulfonate added is 0.05 parts.

[0116] Comparative Example 13

[0117] The difference between this comparative example and Example 1 is that the amount of salicylic acid added is 0.5 parts, and glyoxylic acid is not added.

[0118] Comparative Example 14

[0119] The difference between this comparative example and Example 1 is that salicylic acid is not added, and the amount of glyoxylic acid added is 0.5 parts.

[0120] Comparative Example 15

[0121] The difference between this comparative example and Example 1 is that the amount of salicylic acid added is 0.25 parts, and the amount of glyoxylic acid added is 0.25 parts.

[0122] Experimental Example 1

[0123] The appearance of the aluminum alloys obtained after polishing in the above examples and comparative examples is shown in Table 1. The 1PCS material processing involved polishing a 13.6g piece of 5052 aluminum alloy sheet measuring 100*100*0.5mm using the same polishing method as in Example 1.

[0124] Table 1

[0125]

[0126]

[0127]

[0128] As shown in the table, the polishing agent provided by this invention can achieve a uniform and bright appearance when used to polish aluminum alloys, without producing a large amount of yellow smoke and irritating gases. The wastewater is phosphorus-free, which is environmentally friendly and human-friendly, while achieving excellent polishing results.

[0129] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A polishing agent, characterized in that, The ingredients, by weight, are: 5-20 parts of adhesive, 10-20 parts of sulfuric acid, 50-70 parts of brightener, 0.1-1 parts of sodium m-nitrobenzenesulfonate, 1-25 parts of reducing acid, 0.001-0.01 parts of sodium dodecyl sulfate, 0.001-0.02 parts of corrosion inhibitor, and 0.5-2 parts of activator. The adhesive includes at least one of dimethylaminoformamide and 2-aminobenzamide; the brightener includes at least one of acetic acid, propionic acid, and lactic acid; the reducing acid includes at least one of salicylic acid, glyoxylic acid, glucuronic acid, and hypophosphoric acid; the corrosion inhibitor includes at least one of dimercaptobenzothiazole, quinoline sulfonic acid, and 8-hydroxy-5-quinoline sulfonic acid; and the activator includes at least one of nickel sulfate and aluminum sulfate.

2. The polishing agent according to claim 1, characterized in that, The polishing agent comprises, by weight, 5-20 parts of dimethylaminoformamide, 10-20 parts of sulfuric acid, 50-70 parts of propionic acid, 0.1-1 parts of sodium m-nitrobenzenesulfonate, 0.001-0.01 parts of sodium dodecyl sulfate, 1-10 parts of salicylic acid, 1-5 parts of glyoxylic acid, 0.001-0.01 parts of dimercaptobenzothiazole, 0.001-0.01 parts of quinoline sulfonic acid, 0.001-0.1 parts of nickel sulfate, and 0.5-1 parts of aluminum sulfate.

3. The polishing agent according to claim 1 or 2, characterized in that, The polishing agent also includes a silicon remover.

4. The polishing agent according to claim 3, characterized in that, The silicon remover includes at least one of ammonium bifluoride or ammonium fluoride.

5. The polishing agent according to claim 4, characterized in that, The mass fraction of the silicon remover in the polishing agent is 0.01 to 0.05 parts.

6. A polishing method, characterized in that, The polishing agent described in any one of claims 1-5 is used in the polishing process.

7. The polishing method according to claim 6, characterized in that, The mass ratio of the material to be polished to the polishing agent in the polishing process is 1:(10~100).

8. The polishing method according to claim 6 or 7, characterized in that, The polishing process is performed at a temperature of 75-90℃ for 40-120 seconds.

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