Optical coupling structure, manufacturing method thereof and optical communication system
Patent Information
- Application Number
- CN202311284253.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-10-07
- Publication Date
- 2025-04-08
Smart Images
Figure CN119781113A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of optical communication technology, and in particular to an optical coupling structure and a manufacturing method thereof, and an optical communication system. Background Art
[0002] Active optical cables (AOC) are commonly used signal transmission devices. They are generally used for high-speed, high-reliability interconnection between data centers, high-performance computers, large-capacity storage devices, etc. They are usually composed of integrated optoelectronic devices and optical fibers. The light source used is generally a semiconductor laser, such as vertical cavity surface emitting lasers (VCSEL) or edge-emitting distributed feedback lasers (DFB). Semiconductor lasers need to be above their threshold current to work properly, require relatively high power consumption, and have reliability risks under high temperature conditions. In contrast, micro LEDs are used as light sources, which can emit light under spontaneous radiation, are small in size, have low power consumption, and can have a longer life under high temperature conditions.
[0003] Since the divergence angle of micro LED light source is larger than that of semiconductor laser, there is no mature coupling solution between micro LED array and optical fiber in the industry. Therefore, it is necessary to find an optical coupling structure to improve the coupling efficiency between optical signal and optical fiber. Summary of the invention
[0004] In view of this, the embodiments of the present application provide an optical coupling structure and a manufacturing method thereof, and an optical communication system to solve the technical problem of low coupling efficiency between optical signals and optical fibers in the prior art.
[0005] According to one aspect of the present application, an embodiment of the present application provides an optical coupling structure, comprising: a growth substrate; a first hole and a second hole stacked in the thickness direction of the growth substrate, the first hole and the second hole passing through the growth substrate, the aperture of the first hole being smaller than the aperture of the second hole; a light-emitting epitaxial layer located on a side of the growth substrate close to the first hole; an optical fiber, the optical fiber comprising an optical fiber core and a cladding layer wrapping the optical fiber core, the cladding layer being removed from the input end of the optical fiber core, the input end being correspondingly accommodated in the first hole and being used to couple an optical signal from the light-emitting epitaxial layer, and the cladding layer being correspondingly accommodated in the second hole.
[0006] According to another aspect of the present application, an embodiment of the present application provides a method for manufacturing an optical coupling structure, including: providing a growth substrate, and epitaxially manufacturing a light-emitting epitaxial layer on one side of the growth substrate; on the other side of the growth substrate, corresponding to the position of the light-emitting epitaxial layer, sequentially etching to form a second hole and a first hole that penetrate the growth substrate, so that the light-emitting epitaxial layer is located on the side of the growth substrate close to the first hole, and the aperture of the first hole is smaller than the aperture of the second hole; providing an optical fiber core and a cladding layer that wraps the optical fiber core; removing the cladding layer at one end of the optical fiber core to obtain the input end of the optical fiber core to form an optical fiber; inserting the optical fiber into the first hole and the second hole, so that the input end of the optical fiber core is correspondingly accommodated in the first hole and is used to couple the optical signal from the light-emitting epitaxial layer, and the cladding layer is correspondingly accommodated in the second hole.
[0007] According to another aspect of the present application, an embodiment of the present application provides an optical communication system, including the above-mentioned optical coupling structure.
[0008] An optical coupling structure and a manufacturing method thereof, and an optical communication system are provided in an embodiment of the present application. The optical coupling structure includes a growth substrate, a first hole and a second hole are etched through the growth substrate in the thickness direction of the growth substrate, a light-emitting epitaxial layer is located on a side of the growth substrate close to the first hole, and the optical fiber includes an optical fiber core and a cladding layer wrapping the optical fiber core, the cladding layer is correspondingly accommodated in the second hole with a larger aperture, so as to realize the alignment and fixation of the optical fiber and the growth substrate and improve the overall stability of the optical coupling structure; the input end of the optical fiber core is exposed to the cladding layer and is correspondingly accommodated in the first hole with a smaller aperture, so as to reduce the distance between the input end of the optical fiber core and the light-emitting epitaxial layer, and the input end of the optical fiber core is used to couple the optical signal from the light-emitting epitaxial layer. Such a setting can improve the coupling efficiency of the optical signal and the optical fiber. BRIEF DESCRIPTION OF THE DRAWINGS
[0009] Figure 1 Shown is a structural schematic diagram of an optical coupling structure provided by an embodiment of the present application;
[0010] Figures 2 to 7 Shown is the production Figure 1 A schematic diagram of the intermediate structure of the optical coupling structure shown;
[0011] Figure 8 Shown is a structural schematic diagram of another optical coupling structure provided by an embodiment of the present application;
[0012] Fig. 9 Shown is a schematic structural diagram of another growth substrate provided in one embodiment of the present application;
[0013] Fig.10 Shown is a structural schematic diagram of another optical coupling structure provided by an embodiment of the present application;
[0014] Fig.11 Shown is a structural schematic diagram of another optical coupling structure provided by an embodiment of the present application;
[0015] Fig.12 Shown is a structural schematic diagram of another optical coupling structure provided by an embodiment of the present application;
[0016] Fig.13 Shown is a structural schematic diagram of another optical coupling structure provided by an embodiment of the present application;
[0017] Fig.14 Shown is a schematic diagram of an optical communication system provided by an embodiment of the present application. DETAILED DESCRIPTION
[0018] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments.
[0019] In order to solve the above problems, the present application provides an optical coupling structure, including a growth substrate; a first hole and a second hole stacked in the thickness direction of the growth substrate, the first hole and the second hole penetrate the growth substrate, and the aperture of the first hole is smaller than the aperture of the second hole; a light-emitting epitaxial layer, located on a side of the growth substrate close to the first hole; an optical fiber, the optical fiber including an optical fiber core and a cladding layer wrapping the optical fiber core, the cladding layer is removed from the input end of the optical fiber core, the input end is correspondingly accommodated in the first hole and is used to couple the optical signal from the light-emitting epitaxial layer, and the cladding layer is correspondingly accommodated in the second hole.
[0020] Figure 1 A schematic diagram of a light coupling structure provided in one embodiment of the present application is shown in FIG. Figures 2 to 7 Shown is the production Figure 1 The intermediate structure diagram of the optical coupling structure shown in FIG. Figures 1 to 7 As shown, an optical coupling structure 100 provided in an embodiment of the present application includes a growth substrate 10, a first hole 101 and a second hole 102 stacked in a thickness direction Y of the growth substrate 10, the first hole 101 and the second hole 102 penetrate the growth substrate 10, and the aperture R1 of the first hole 101 is smaller than the aperture R2 of the second hole 102; a light-emitting epitaxial layer 20, located on a side of the growth substrate 10 close to the first hole 101; an optical fiber 30, the optical fiber 30 includes an optical fiber core 301 and a cladding layer 302 wrapping the optical fiber core 301, the input end 3011 of the optical fiber core 301 removes the cladding layer 302, the input end 3011 is correspondingly received in the first hole 101 and is used to couple the optical signal from the light-emitting epitaxial layer 20, and the cladding layer 302 is correspondingly received in the second hole 102.
[0021] Specifically, the first hole 101 and the second hole 102 are located at different thicknesses of the growth substrate 10, for example, the first hole 101 is closer to the light-emitting epitaxial layer 20, and the input end 3011 in the first hole 101 is used to couple the optical signal from the light-emitting epitaxial layer; the first hole 101 and the second hole 102 are connected to form a through hole that penetrates the growth substrate 10, and the through hole has a multi-level aperture, wherein the second hole 102 with a larger aperture accommodates the cladding layer 302 of the optical fiber to achieve the alignment and fixation of the optical fiber and the growth substrate, and the first hole 101 with a smaller aperture accommodates the input end 3011 of the optical fiber core, that is, the optical fiber core 301 extends into the first hole 101, reducing the distance between the input end of the optical fiber core and the light-emitting epitaxial layer, which can improve the optical signal coupling efficiency.
[0022] It can be understood that the input end 3011 of the optical fiber core extends into the first hole 101 , so the projection of the first hole 101 on the plane where the growth substrate 10 is located falls within the projection of the second hole 102 on the plane where the growth substrate 10 is located.
[0023] An embodiment of the present application further provides a method for manufacturing an optical coupling structure, the manufacturing method comprising:
[0024] Step S1, such as Figures 2 to 4 As shown, a growth substrate 10 is provided, and a light-emitting epitaxial layer 20 is formed by epitaxy on one side of the growth substrate 10. Specifically, as Figures 2 to 4 As shown, first, an N-type semiconductor layer 201, an active light-emitting layer 202, and a P-type semiconductor layer 203 are formed by epitaxial growth on the growth substrate 10, and then patterned etching is performed to form a light-emitting epitaxial layer 20. Optionally, a mask layer exposing the growth substrate 10 is first formed on the growth substrate 10, and then the light-emitting epitaxial layer 20 is selectively formed by epitaxial growth in the opening of the mask layer.
[0025] In one embodiment, the material of the growth substrate 10 is any one of Si, SiGe, SiC, sapphire and III-V semiconductor materials. Optionally, taking GaN-based materials as an example, the material of the growth substrate 10 is any one of Si, SiGe, SiC, sapphire and GaN, which can improve the crystal structure of the later light-emitting epitaxial layer 20. When Si is used, the first hole is composed of an opaque Si wall sidewall, which is conducive to limiting the coupling of the optical signal to the input end of the optical fiber core.
[0026] In one embodiment, the material of the light emitting epitaxial layer 20 is a III-V semiconductor material. Figure 2 As shown, the light emitting epitaxial layer 20 includes an N-type semiconductor layer 201 , an active light emitting layer 202 and a P-type semiconductor layer 203 which are sequentially epitaxially produced on a growth substrate 10 .
[0027] Optionally, the material of the N-type semiconductor layer 201 and the P-type semiconductor layer 203 is GaN, and the material of the active light-emitting layer 202 is an unlimited combination of GaN, InGaN, AlGaN and InAlGaN; specifically, the active light-emitting layer 202 emits visible light, and the optical coupling structure is used for coupling of visible light. Optionally, the material of the N-type semiconductor layer 201 and the P-type semiconductor layer 203 is InP, and the material of the active light-emitting layer 202 is an unlimited combination of InP, GaInP, AlInP and AlInGaP.
[0028] Optionally, before epitaxially producing the N-type semiconductor layer 201, a nucleation layer and a buffer layer (not shown in the figure) are pre-produced to relieve the stress generated when growing the light-emitting epitaxial layer 20 and improve the crystal structure of the light-emitting epitaxial layer 20; taking GaN-based materials as an example, the nucleation layer can be AlN and the buffer layer can be GaN.
[0029] Step S2, such as Figure 5 As shown, on the other side of the growth substrate 10, corresponding to the position of the light-emitting epitaxial layer 20, a second hole 102 and a first hole 101 penetrating the growth substrate 10 are sequentially etched, so that the light-emitting epitaxial layer 20 is located on the side of the growth substrate 10 close to the first hole 101, and the aperture R1 of the first hole 101 is smaller than the aperture R2 of the second hole 102. Specifically, the first hole 101 and the second hole 102 with different apertures are formed by overlaying, and the first hole 101 and the second hole 102 constitute a through hole penetrating the growth substrate 10, and the through hole has a multi-level aperture.
[0030] Step S3, such as Figure 6 As shown, an optical fiber core 301 and a cladding layer 302 that wraps the optical fiber core 301 are provided. Specifically, the optical fiber core 301 can be a glass fiber or Si made of SiO2, and the cladding layer 302 can be another transparent material, such as Si or a resin material, whose refractive index is lower than the refractive index of the optical fiber core 301, so that the optical signal is confined to propagate in the optical fiber core and protect the internal optical fiber core and other structures. Optionally, the optical fiber 30 is a glass optical fiber or a plastic optical fiber.
[0031] Step S4, such as Figure 7 As shown, the cladding layer 302 at one end of the optical fiber core 301 is removed to obtain the input end 3011 of the optical fiber core 301, thereby forming the optical fiber 30. Specifically, the process of removing the cladding layer 302 can be wet etching. The input end 3001 of the optical fiber core 301 can adopt a common 8° angle structure or other optimized angles to reduce reflection.
[0032] Step S5, such as Figure 1As shown, the optical fiber 30 is inserted into the first hole 101 and the second hole 102, so that the input end 3011 of the optical fiber core 301 is correspondingly received in the first hole 101 and is used to couple the optical signal from the light-emitting epitaxial layer 20, and the cladding layer 302 is correspondingly received in the second hole 102. Specifically, the second hole 102 with a larger aperture accommodates the cladding layer 302 of the optical fiber to achieve alignment and fixation of the optical fiber and the growth substrate, and the first hole 101 with a smaller aperture accommodates the input end 3011 of the optical fiber core, that is, the optical fiber core 301 extends into the first hole 101, reducing the distance between the input end of the optical fiber core and the light-emitting epitaxial layer, which can improve the optical signal coupling efficiency.
[0033] In one embodiment, Figure 5 As shown, the aperture R1 of the first hole 101 is 5 μm-20 μm; and / or, the aperture R2 of the second hole 102 is 100 μm-10 mm. Specifically, the aperture of the first hole 101 matches the size of the light-emitting epitaxial layer 20, and the aperture of the first hole 101 can be slightly larger than, equal to, or slightly smaller than the size of the light-emitting epitaxial layer 20; the aperture of the second hole 102 matches the size of the cladding layer of the optical fiber, and the aperture of the second hole 102 can be slightly larger than or equal to the size of the cladding layer.
[0034] In one embodiment, Figure 7 As shown, in the thickness direction Y of the growth substrate 10, the depth D1 of the first hole 101 is greater than the length D2 of the input end 3011 of the optical fiber core 301. It can be understood that the input end 3011 does not directly contact the light-emitting epitaxial layer 20, and a gap is left when assembling the growth substrate 10 and the optical fiber 30 to prevent the input end 3011 from contacting the light-emitting epitaxial layer 20 and damaging the light-emitting epitaxial layer 20.
[0035] In one embodiment, Figure 8 FIG. 1 is a schematic diagram of another optical coupling structure provided in an embodiment of the present application. Figure 8 As shown, in the thickness direction Y of the growth substrate 10, the depth D3 of the second hole 102 is greater than the length D2 of the input end 3011 of the optical fiber core 301. Specifically, on the one hand, when assembling the growth substrate 10 and the optical fiber 30, the cladding layer 302 preferentially extends into the second hole 102. Since the depth D3 of the second hole 102 is greater than the length D2 of the input end 3011 of the optical fiber core 301, a space of "D3-D2" is reserved between the input end 3011 and the first hole 101. After the input end 3011 is aligned with the first hole 101, the input end 3011 is extended into the first hole 101. Since the optical fiber core is relatively brittle and easily damaged, such a setting can avoid damaging the input end 3011 of the optical fiber core 301 during the entire assembly process, thereby reducing the difficulty of assembling the optical coupling structure. On the other hand, the growth substrate 10 retains a relatively thick thickness, which can simplify the process of thinning the substrate.
[0036] Optionally, to ensure the stability of the optical coupling structure, the thickness of the growth substrate 10 is greater than 100 μm.
[0037] In one embodiment, Fig. 9 FIG. 1 is a schematic diagram of the structure of another growth substrate provided in an embodiment of the present application. Fig. 9 As shown, the first hole 101 is provided with a slope 103 on one side close to the second hole 102. It is understandable that the slope 103 enlarges the aperture of the first hole 101 on the side close to the second hole 102, making it easier for the input end of the optical fiber core to extend into the first hole 101, thereby reducing the difficulty of assembling the optical coupling structure.
[0038] In one embodiment, Figure 7 As shown, each optical fiber 30 includes at least one optical fiber core 301, and the number of light-emitting epitaxial layers 20 is the same as the number of optical fiber cores 301. Specifically, the number of light-emitting epitaxial layers 20 is consistent with the number of optical fiber cores 301, and the optical signal emitted by each light-emitting epitaxial layer 20 is coupled to the corresponding optical fiber core 301.
[0039] In one embodiment, Figure 7 As shown, the optical fiber 30 is a multi-core optical fiber, which includes N optical fiber cores, and the number of light-emitting epitaxial layers is N, where N is an integer greater than or equal to 2. Specifically, Figure 7 In the cross section shown, N is 3, and an optical coupling structure includes three light-emitting epitaxial layers 20 and three optical fiber cores 301. The present application does not limit the number of light-emitting epitaxial layers 20 and the number of optical fiber cores 301 in an optical coupling structure.
[0040] Optionally, Fig.10 FIG. 1 is a schematic diagram of another optical coupling structure provided by an embodiment of the present application. Fig.10 As shown, an optical coupling structure includes a light-emitting epitaxial layer 20 and an optical fiber core 301 , wherein the growth substrate 10 includes a first hole for accommodating an input end 3011 of the optical fiber core 301 and a second hole for accommodating a cladding layer 302 .
[0041] Optionally, Fig.11 FIG. 1 is a schematic diagram of another optical coupling structure provided by an embodiment of the present application. Fig.11 As shown, the growth substrate 10 is a patterned substrate including grooves, and the light-emitting epitaxial layer 20 is epitaxially grown in the grooves of the growth substrate 10. Optionally, part of the light-emitting epitaxial layer 20 is epitaxially grown in the grooves of the growth substrate 10.
[0042] Optionally, Fig.12 FIG. 1 is a schematic diagram of another optical coupling structure provided by an embodiment of the present application. Fig.12As shown, the optical coupling structure further includes a driving substrate 40 located on the side of the light-emitting epitaxial layer 20 away from the optical fiber, and the driving substrate 40 provides an electrical signal to the light-emitting epitaxial layer 20 through electrodes 401 / 402. Optionally, a light-blocking material 50 is filled between the driving substrate 40 and the growth substrate 10, so that the optical signal in the light-emitting epitaxial layer 20 is emitted from a position close to the first hole.
[0043] Optionally, Fig.13 FIG. 1 is a schematic diagram of another optical coupling structure provided in an embodiment of the present application. Fig.13 As shown, the optical coupling structure includes a multi-core optical fiber, which includes multiple optical fiber cores 301 and a cladding layer 302 that wraps the multiple optical fiber cores 301, wherein one optical fiber core 301 corresponds to multiple light-emitting epitaxial layers 20. Specifically, the multiple light-emitting epitaxial layers 20 corresponding to one optical fiber core 301 constitute a light-emitting array, and the light-emitting wavelengths of a light-emitting array are the same, and the optical fiber core 301 is a single-mode optical fiber, or the light-emitting wavelengths of a light-emitting array are different, and the optical fiber core 301 is a multi-mode optical fiber. It should be noted that Fig.13 A light emitting array is shown to include three light emitting epitaxial layers 20 , and this embodiment does not limit the number of light emitting epitaxial layers 20 . Optionally, in order to maintain the stability of the light emitting array, insulating light blocking materials 50 may be filled between the light emitting epitaxial layers 20 .
[0044] Optionally, the optical coupling structure further includes an optical film, which is located between the light-emitting epitaxial layer and the input end of the optical fiber core, wherein the refractive index of the optical film is between the refractive index of the semiconductor film layer on the side of the light-emitting epitaxial layer close to the growth substrate and the refractive index of the input end. Specifically, the refractive indexes of the above three structures are gradually changed, and when the optical signal from the light-emitting epitaxial layer 20 enters the optical fiber through the above three structures, the light loss can be reduced and the coupling efficiency can be improved.
[0045] Optionally, the refractive index of the optical film is gradient. Optionally, taking the light-emitting epitaxial layer 20 as a GaN-based material as an example, the semiconductor film layer on the side of the light-emitting epitaxial layer 20 close to the growth substrate 10 is a nucleation layer AlN, the refractive index of AlN is 2.1, the material of the input end of the optical fiber is SiO2, the refractive index of SiO2 is 1.45, and the refractive index of the optical film is between 1.45 and 2.1; Optionally, the material of the optical film is SiON, and different refractive indices are adjusted by the nitrogen content or oxygen content of SiON to obtain an optical film with a specific refractive index or a gradient refractive index.
[0046] An embodiment of the present application further provides an optical communication system, including the optical coupling structure in each of the above embodiments. Specifically, Fig.14 FIG. 1 is a schematic diagram of an optical communication system provided by an embodiment of the present application. Fig.14As shown, the optical communication system includes an optical coupling structure 100 located at the transmitting end T1. Information is coupled to the optical fiber 30 by the optical coupling structure 100 in the form of light waves, then propagates through the optical fiber 30, and finally coupled to the receiving end R1.
[0047] An optical coupling structure and a manufacturing method thereof, and an optical communication system are provided in an embodiment of the present application. The optical coupling structure includes a growth substrate, a first hole and a second hole are etched through the growth substrate in the thickness direction of the growth substrate, a light-emitting epitaxial layer is located on a side of the growth substrate close to the first hole, and the optical fiber includes an optical fiber core and a cladding layer wrapping the optical fiber core, the cladding layer is correspondingly accommodated in the second hole with a larger aperture, so as to realize the alignment and fixation of the optical fiber and the growth substrate and improve the overall stability of the optical coupling structure; the input end of the optical fiber core is exposed to the cladding layer and is correspondingly accommodated in the first hole with a smaller aperture, so as to reduce the distance between the input end of the optical fiber core and the light-emitting epitaxial layer, and the input end of the optical fiber core is used to couple the optical signal from the light-emitting epitaxial layer. Such a setting can improve the optical signal coupling efficiency.
[0048] It should be understood that the term "including" and its variations used in this application are open inclusions, that is, "including but not limited to". The term "one embodiment" means "at least one embodiment". In this specification, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples without contradiction.
Claims
1. An optical coupling structure, characterized in that: include: Growth substrate; A first hole and a second hole stacked in a thickness direction of the growth substrate, the first hole and the second hole penetrate the growth substrate, and the aperture of the first hole is smaller than the aperture of the second hole; a light-emitting epitaxial layer, located on a side of the growth substrate close to the first hole; An optical fiber, comprising an optical fiber core and a cladding layer wrapping the optical fiber core, the cladding layer is removed from the input end of the optical fiber core, the input end is correspondingly accommodated in the first hole and is used to couple the optical signal from the light-emitting epitaxial layer, and the cladding layer is correspondingly accommodated in the second hole.
2. The optical coupling structure according to claim 1, characterized in that: In the thickness direction of the growth substrate, the depth of the first hole is greater than the length of the input end of the optical fiber core.
3. The optical coupling structure according to claim 1, characterized in that: In the thickness direction of the growth substrate, the depth of the second hole is greater than the length of the input end of the optical fiber core.
4. The optical coupling structure according to claim 1, characterized in that: The first hole is provided with an inclined surface on a side close to the second hole.
5. The optical coupling structure according to claim 1, characterized in that: Each of the optical fibers includes at least one optical fiber core, and the number of the light-emitting epitaxial layers is the same as the number of the optical fiber cores.
6. The optical coupling structure according to claim 5, characterized in that: The optical fiber is a multi-core optical fiber, which includes N optical fiber cores. The number of the light-emitting epitaxial layers is N, where N is an integer greater than or equal to 2.
7. The optical coupling structure according to claim 1, characterized in that: The material of the light-emitting epitaxial layer is a III-V semiconductor material.
8. The optical coupling structure according to claim 1, characterized in that: The material of the growth substrate is any one of Si, SiGe, SiC, sapphire and III-V semiconductor materials.
9. The optical coupling structure according to claim 1, characterized in that: The pore size of the first hole is 5 μm-20 μm; and / or the pore size of the second hole is 100 μm-10 mm.
10. The optical coupling structure according to claim 1, characterized in that: It also includes an optical film, which is located between the light-emitting epitaxial layer and the input end of the optical fiber core. The refractive index of the optical film is between the refractive index of the semiconductor film layer on the side of the light-emitting epitaxial layer close to the growth substrate and the refractive index of the input end.
11. A method for manufacturing an optical coupling structure, characterized in that: include: Providing a growth substrate, and epitaxially producing a light-emitting epitaxial layer on one side of the growth substrate; On the other side of the growth substrate, at a position corresponding to the light-emitting epitaxial layer, sequentially etching to form a second hole and a first hole penetrating the growth substrate, so that the light-emitting epitaxial layer is located on a side of the growth substrate close to the first hole, and the aperture of the first hole is smaller than the aperture of the second hole; Providing an optical fiber core and a cladding layer wrapping the optical fiber core; Removing the cladding layer at one end of the optical fiber core to obtain the input end of the optical fiber core to form an optical fiber; The optical fiber is inserted into the first hole and the second hole, so that the input end of the optical fiber core is correspondingly received in the first hole and used to couple the optical signal from the light-emitting epitaxial layer, and the cladding layer is correspondingly received in the second hole.
12. An optical communication system, characterized in that: The optical coupling structure comprises the optical coupling structure as claimed in any one of claims 1 to 10.