Film layer structure and preparation method

Abstract

The invention provides a film layer structure and a preparation method thereof, and the method comprises the steps: forming a first ceramic coating through an atmosphere plasma spraying technology or an evaporation technology; forming a second ceramic coating on one side, far away from the substrate, of the first ceramic coating by using a suspension plasma spraying process; and forming a third ceramic coating on one side, far away from the substrate, of the second ceramic coating by using a chemical vapor deposition process or a physical vapor deposition process. The first ceramic coating prepared by the atmospheric plasma spraying process or the evaporation process has good interface bonding force. The second ceramic coating is prepared through a suspension plasma spraying process, and the roughness and porosity of the film layer structure can be reduced. The third ceramic coating is prepared through a chemical vapor deposition process or a physical vapor deposition process, cracks and other defects of the film structure are reduced, the smooth and compact film structure surface without crack defects is obtained and applied to the chamber lining of the plasma equipment, and the cleaning function of plasma cleaning on process by-products attached to the chamber lining can be enhanced.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a film structure and a preparation method thereof. Background Art

[0002] The conventional inductively coupled plasma etching process (ICP etching, Inductive coupled plasma etching) is completed by alternating wafer etching and subsequent chamber in-situ plasma cleaning (Chamber in-situ cleaning) or no wafer clean (No wafer clean, NWC) workflow.

[0003] The purpose of plasma cleaning is to remove defects or deposited process byproducts generated inside the chamber after the previous plasma etching of the wafer. As the etching process progresses over a long period of time, the defects or deposited process byproducts continue to increase, making it difficult for the next wafer to be processed in a stable chamber environment. This requires plasma cleaning after each wafer etching to clean the chamber deposition.

[0004] However, the effective cleaning effect of plasma cleaning also depends on the state of the surface of the film structure of the workpiece inside the chamber. Generally, the smoother and flatter the surface of the film structure of the workpiece, the easier it is to be cleaned by plasma cleaning.

[0005] However, the surface of the chamber liner currently used is often not very smooth and flat, and has high surface defects and roughness, which seriously affects the stability and yield of the plasma etching process. Summary of the invention

[0006] In view of this, this summary of the invention is provided to introduce the concepts in a brief form, which will be described in detail in the detailed description section below. This summary of the invention is not intended to identify the key features or essential features of the technical solution claimed for protection, nor is it intended to be used to limit the scope of the technical solution claimed for protection.

[0007] The purpose of the present application is to provide a film layer structure and a preparation method thereof, wherein the surface of the film layer structure is smooth, dense and free of defects such as cracks, and the stability and yield of the plasma etching process can be improved.

[0008] To achieve the above purpose, this application has the following technical solutions:

[0009] In a first aspect, an embodiment of the present application provides a method for preparing a film layer structure, wherein the film layer structure is applied to a plasma device, comprising:

[0010] providing a substrate;

[0011] A multilayer ceramic coating is formed on one side of the substrate; the roughness and looseness of the multilayer ceramic coating gradually decrease from the side close to the substrate to the side far away from the substrate.

[0012] In a possible implementation, the multilayer ceramic coating includes a first ceramic coating, a second ceramic coating and a third ceramic coating, and the multilayer ceramic coating is formed on one side of the substrate, including:

[0013] forming a first ceramic coating on the substrate by using an atmospheric plasma spraying process or an evaporation process;

[0014] Using a suspension plasma spraying process, forming a second ceramic coating on a side of the first ceramic coating away from the substrate;

[0015] A third ceramic coating is formed on a side of the second ceramic coating away from the substrate by using a chemical vapor deposition process, a physical vapor deposition process, a plasma enhanced chemical vapor deposition process or a plasma enhanced physical vapor deposition process.

[0016] In a possible implementation manner, the material of the substrate includes aluminum or an aluminum alloy.

[0017] In a possible implementation manner, the material of the first ceramic coating includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet.

[0018] In a possible implementation manner, the material of the second ceramic coating includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet.

[0019] In a possible implementation, the material of the third ceramic coating includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, or yttrium aluminum garnet.

[0020] In a possible implementation manner, the second ceramic coating includes a first ceramic sub-coating and a second ceramic sub-coating.

[0021] In a possible implementation manner, a thickness of the first ceramic coating is greater than or equal to 50 μm and less than or equal to 500 μm.

[0022] In a possible implementation manner, a thickness of the second ceramic coating is greater than or equal to 50 μm and less than or equal to 500 μm.

[0023] In a possible implementation manner, the thickness of the third ceramic coating is greater than or equal to 2 μm and less than or equal to 200 μm.

[0024] In a possible implementation manner, the porosity of the first ceramic coating is greater than or equal to 3% and less than or equal to 8%.

[0025] In a possible implementation manner, the porosity of the second ceramic coating is less than or equal to 3%.

[0026] In a possible implementation manner, the porosity of the third ceramic coating is less than or equal to 0.1%.

[0027] In a possible implementation manner, the roughness of the first ceramic coating is greater than or equal to 3 μm and less than or equal to 8 μm.

[0028] In a possible implementation manner, the roughness of the second ceramic coating is greater than or equal to 1.0 μm and less than or equal to 4 μm.

[0029] In a possible implementation manner, the roughness of the third ceramic coating is less than or equal to 1 μm.

[0030] In a possible implementation, the aluminum alloy includes copper, silicon, iron, manganese, magnesium, zinc, chromium and / or titanium.

[0031] In a possible implementation, the aluminum alloy is 6061 aluminum plate alloy.

[0032] In a second aspect, an embodiment of the present application provides a film layer structure, which is applied to a plasma device, including a plasma etching device and a plasma coating device, and is prepared by the above method, including:

[0033] substrate;

[0034] A multilayer ceramic coating is located on one side of the substrate; the roughness and looseness of the multilayer ceramic coating gradually decrease from the side close to the substrate to the side far away from the substrate.

[0035] In a possible implementation, the multilayer ceramic coating includes a first ceramic coating, a second ceramic coating, and a third ceramic coating;

[0036] The materials of the first ceramic coating, the second ceramic coating and the third ceramic coating include aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride or yttrium aluminum garnet.

[0037] Compared with the prior art, the embodiments of the present application have the following beneficial effects:

[0038] The embodiment of the present application provides a film structure and a preparation method, the method comprising: providing a substrate; forming a first ceramic coating on the substrate by an atmospheric plasma spraying process or an evaporation process; forming a second ceramic coating on the side of the first ceramic coating away from the substrate by a suspension plasma spraying process; forming a third ceramic coating on the side of the second ceramic coating away from the substrate by a chemical vapor deposition process or a physical vapor deposition process. The first ceramic coating prepared by the atmospheric plasma spraying process or the evaporation process in the present application has good interface bonding force and is convenient for bonding with the substrate. The second ceramic coating prepared by the suspension plasma spraying process can reduce the roughness and porosity of the film structure. The third ceramic coating prepared by the chemical vapor deposition process or the physical vapor deposition process can further reduce defects such as cracks in the film structure. Thus, a smooth, dense and crack-free film structure surface is obtained. The smooth, dense and crack-free film structure is applied to the chamber lining of the plasma equipment, which helps to enhance the plasma cleaning function of the plasma cleaning on the process byproducts attached to the chamber lining in the plasma etching process, and can improve the stability and yield of the plasma etching process. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0040] The above and other features, advantages and aspects of the embodiments of the present disclosure will become more apparent with reference to the following detailed description in conjunction with the accompanying drawings. Throughout the accompanying drawings, the same or similar reference numerals represent the same or similar elements. It should be understood that the drawings are schematic and the originals and elements are not necessarily drawn to scale.

[0041] Figure 1 A flow chart showing a method for preparing a film layer structure provided in an embodiment of the present application is shown;

[0042] Figure 2 A schematic diagram of the cross-sectional structure of a membrane layer structure provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0043] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below with reference to the accompanying drawings.

[0044] In the following description, many specific details are set forth to facilitate a full understanding of the present application, but the present application may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0045] As described in the related art, a common inductively coupled plasma etching process is completed by alternating wafer etching and subsequent chamber in-situ plasma cleaning or non-wafer plasma cleaning workflow.

[0046] Among them, the purpose of plasma cleaning is to remove defects or deposited process by-products generated inside the chamber after the previous plasma etching of the wafer. As the etching process proceeds for a long time, the defects or deposited process by-products continue to increase, making it difficult to process the next wafer in a stable chamber environment. This requires plasma cleaning to clean the chamber deposits after each wafer etching.

[0047] However, the effective cleaning effect of plasma cleaning also depends on the state of the surface of the workpiece film structure inside the chamber. Generally, the smoother and flatter the workpiece film structure surface, the easier it is to be cleaned by plasma cleaning.

[0048] However, the surface of the chamber liner currently used is often not very smooth and flat, and has high surface defects and roughness, which seriously affects the stability and yield of the plasma etching process.

[0049] Based on the above technical problems, the embodiment of the present application provides a film structure and a preparation method, the method comprising: providing a substrate; forming a first ceramic coating on the substrate by an atmospheric plasma spraying process or an evaporation process; forming a second ceramic coating on the side of the first ceramic coating away from the substrate by a suspension plasma spraying process; forming a third ceramic coating on the side of the second ceramic coating away from the substrate by a chemical vapor deposition process or a physical vapor deposition process. The first ceramic coating prepared by the atmospheric plasma spraying process or the evaporation process in the present application has good interface bonding force and is convenient for bonding with the substrate. The second ceramic coating prepared by the suspension plasma spraying process can reduce the roughness and porosity of the film structure. The third ceramic coating prepared by the chemical vapor deposition process or the physical vapor deposition process can further reduce defects such as cracks in the film structure. Thus, a smooth, dense and crack-free film structure surface is obtained. The smooth, dense and crack-free film structure is applied to the chamber lining of the plasma equipment, which helps to enhance the plasma cleaning function of the plasma cleaning on the process byproducts attached to the chamber lining in the plasma etching process, and can improve the stability and yield of the plasma etching process.

[0050] In order to better understand the technical solution and technical effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.

[0051] Exemplary Methods

[0052] See also Figure 1 As shown, Figure 1 A flow chart of a method for preparing a film structure provided in an embodiment of the present application includes:

[0053] S101: providing a substrate.

[0054] In the examples of this application, see Figure 2 Shown is a schematic diagram of a membrane layer structure provided in an embodiment of the present application.

[0055] Specifically, the material of the substrate 10 may include aluminum. Optionally, the material of the substrate 10 may include an aluminum alloy. The aluminum alloy provided in the embodiment of the present application may include copper, silicon, iron, manganese, magnesium, zinc, chromium and / or titanium. The embodiment of the present application uses aluminum or an aluminum alloy as the substrate 10, which is light in weight.

[0056] In a possible implementation, the aluminum alloy provided in the embodiment of the present application may be 6061 aluminum plate alloy 6061T. That is, in the embodiment of the present application, the main alloying elements in the 6061 aluminum plate alloy are magnesium and silicon, which has medium strength, good corrosion resistance, weldability, and good oxidation effect.

[0057] Optionally, the embodiment of the present application may perform hard oxygen treatment on the surface of the substrate 10 . The hard oxygen treatment forms a hard, wear-resistant and corrosion-resistant oxide film on the surface of the substrate 10 , thereby improving the surface hardness and durability of the substrate 10 .

[0058] Then, a multilayer ceramic coating is formed on one side of the substrate 10; the roughness and porosity of the multilayer ceramic coating gradually decrease from the side close to the substrate 10 to the side far from the substrate 10. Thus, the embodiment of the present application achieves a smooth and dense surface by gradually reducing the roughness and porosity of the multilayer ceramic coating.

[0059] Optionally, the multilayer ceramic coating provided in the embodiment of the present application may include a first ceramic coating 11, a second ceramic coating 12 and a third ceramic coating 13. The multilayer ceramic coating is formed on one side of the substrate 10, which may specifically include the following steps: S102-S104.

[0060] S102: forming a first ceramic coating on the substrate by using an atmospheric plasma spraying process or an evaporation process.

[0061] In the embodiment of the present application, the first ceramic coating 11 may be formed on the substrate 10 by using an atmospheric plasma spraying (APS) process or an evaporation process.

[0062] Optionally, the material of the first ceramic coating 11 may include aluminum oxide, yttrium oxide, yttrium fluoride, yttrium fluoride oxide or yttrium aluminum garnet. Optionally, the thickness of the first ceramic coating 11 may be greater than or equal to 50 μm and less than or equal to 500 μm. Optionally, the porosity of the first ceramic coating 11 may be greater than or equal to 3% and less than or equal to 8%. Optionally, the roughness of the first ceramic coating is greater than or equal to 3 μm and less than or equal to 8 μm.

[0063] Specifically, the first ceramic coating 11 formed by the atmospheric plasma spraying process or the evaporation process in the embodiment of the present application has a certain degree of looseness and structural defects, but it has good interface bonding force, which is convenient for bonding with the substrate 10 or the film layer formed subsequently. In addition, the first ceramic coating 11 formed has a fast film forming speed and low cost.

[0064] However, since the first ceramic coating 11 formed by the atmospheric plasma spraying process or the evaporation process has a high surface roughness and a large amount of porosity, it is difficult to completely remove the deposition products in the pores of the coating by plasma cleaning, and long-term accumulation will affect the stability of the chamber process and the particles.

[0065] That is, due to the limitation of the thin film deposition process, only the first ceramic coating 11 is formed with a rough surface and large porosity, and a crack-free, dense and smooth coating surface cannot be provided, which affects the cleaning ability of plasma cleaning during the plasma etching process.

[0066] Therefore, in the embodiment of the present application, the second ceramic coating 12 is further formed.

[0067] S103: forming a second ceramic coating on a side of the first ceramic coating away from the substrate by using a suspension plasma spraying process.

[0068] In the embodiment of the present application, a suspension plasma spraying process (SPS) may be used to form the second ceramic coating 12 on a side of the first ceramic coating 11 away from the substrate 10 .

[0069] Specifically, the second ceramic coating 12 formed by the suspension plasma spraying process in the embodiment of the present application may be a plasma-etching-resistant ceramic film with reduced porosity and roughness.

[0070] Optionally, the material of the second ceramic coating 12 may include aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride or yttrium aluminum garnet. The thickness of the second ceramic coating 12 may be similar to or the same as that of the first ceramic coating 11, and the surface roughness and porosity of the second ceramic coating 12 are lower than those of the first ceramic coating 11.

[0071] Optionally, in the embodiment of the present application, the second ceramic coating 12 may include a first ceramic sub-coating 121 and a second ceramic sub-coating 122 to further reduce the roughness and looseness of the film layer structure.

[0072] Optionally, the thickness of the second ceramic coating 12 may be greater than or equal to 50 μm and less than or equal to 500 μm. The porosity of the second ceramic coating 12 may be less than or equal to 3%. The roughness of the second ceramic coating 12 may be greater than or equal to 1.0 μm and less than or equal to 4 μm.

[0073] The surface of the double-layer coating composed of the first ceramic coating 11 and the second ceramic coating 12 has a lower roughness (Ra) and porosity, but defects such as cracks still exist on the surface of the second ceramic coating 12. Therefore, the surface of the liner protected by the double-layer coating composed of the first ceramic coating 11 and the second ceramic coating 12 is at risk of crack-induced deposition and accumulation of process byproducts, which will affect the cleaning effect of plasma cleaning on the chamber.

[0074] Therefore, in the embodiment of the present application, the third ceramic coating 13 is further formed.

[0075] S104: forming a third ceramic coating on a side of the second ceramic coating away from the substrate by using a chemical vapor deposition process, a physical vapor deposition process, a plasma enhanced chemical vapor deposition process or a plasma enhanced physical vapor deposition process.

[0076] Specifically, the embodiment of the present application can form the third ceramic coating 13 on the side of the second ceramic coating 12 away from the substrate 10 by using a chemical vapor deposition process (CVD), a physical vapor deposition process (PVD), a plasma enhanced chemical vapor deposition process or a plasma enhanced physical vapor deposition process.

[0077] Specifically, the third ceramic coating 13 formed by the chemical vapor deposition process or the physical vapor deposition process in the embodiment of the present application may be a dense plasma-etching-resistant ceramic film with a smooth surface and no defects.

[0078] Optionally, the material of the third ceramic coating 13 may include aluminum oxide, yttrium oxide, yttrium fluoride, yttrium fluoride oxide or yttrium aluminum garnet. Optionally, the thickness of the third ceramic coating 13 may be greater than or equal to 2 μm and less than or equal to 200 μm. Optionally, the porosity of the third ceramic coating 13 may be less than or equal to 0.1%. Optionally, the roughness of the third ceramic coating may be less than or equal to 1 μm.

[0079] The materials of the first ceramic coating 11, the second ceramic coating 12 and the third ceramic coating 13 provided in the embodiment of the present application are a single type of material, which can ensure the uniformity of the materials of each ceramic coating and avoid the occurrence of coating shedding.

[0080] The third ceramic coating 13 provided in the embodiment of the present application has a relatively small thickness, which can ensure that the surface of the third ceramic coating 13 is smooth and defect-free while avoiding cracking of the third ceramic coating 13 , thereby improving the quality of the prepared third ceramic coating 13 .

[0081] The third ceramic coating 13 is continuously stacked on the second ceramic coating 12. Since the ceramic coatings such as yttrium oxide prepared by chemical vapor deposition process or physical vapor deposition process are dense and free of defects such as cracks, and deposited on the surface of the second ceramic coating 12, the roughness of the coating surface can be further reduced (such as <1um), eliminating the porosity and cracks of the second ceramic coating 12. Therefore, the plasma etching process aluminum workpiece such as the inner liner surface is sequentially deposited to prepare the first ceramic coating 11 / the second ceramic coating 12 / the third ceramic coating 13 to obtain a smooth, dense and crack-free surface, which helps to enhance the plasma cleaning function of the plasma cleaning of the chamber in the plasma etching process.

[0082] It should be noted that if the third ceramic coating 13 is directly prepared and deposited on the surface of the first ceramic coating 11, since the third ceramic coating 13 is relatively thin, the surface roughness (e.g., 5-7um) of the lining protected by the first ceramic coating 11 / third ceramic coating 13 is relatively high, and there is no obvious difference compared with the roughness of the first ceramic coating 11 (3-8um), which will affect the cleaning effect of plasma cleaning on the chamber during the plasma etching process.

[0083] Therefore, the embodiment of the present application chooses to deposit a third ceramic coating 13 on the second ceramic coating 12 to gradually improve the roughness of the coating surface, thereby obtaining a smooth, dense, crack-free film layer structure surface for application in the chamber lining of a plasma device, thereby enhancing the cleaning function of plasma cleaning on process by-products attached to the chamber lining.

[0084] The embodiment of the present application provides a film structure and a preparation method, the method comprising: providing a substrate; forming a first ceramic coating on the substrate by an atmospheric plasma spraying process or an evaporation process; forming a second ceramic coating on the side of the first ceramic coating away from the substrate by a suspension plasma spraying process; forming a third ceramic coating on the side of the second ceramic coating away from the substrate by a chemical vapor deposition process or a physical vapor deposition process. The first ceramic coating prepared by the atmospheric plasma spraying process or the evaporation process in the present application has good interface bonding force and is convenient for bonding with the substrate. The second ceramic coating prepared by the suspension plasma spraying process can reduce the roughness and porosity of the film structure. The third ceramic coating prepared by the chemical vapor deposition process or the physical vapor deposition process can further reduce defects such as cracks in the film structure. Thus, a smooth, dense and crack-free film structure surface is obtained. The smooth, dense and crack-free film structure is applied to the chamber lining of the plasma equipment, which helps to enhance the plasma cleaning function of the plasma cleaning on the process byproducts attached to the chamber lining in the plasma etching process, and can improve the stability and yield of the plasma etching process.

[0085] Exemplary Structure

[0086] The embodiment of the present application provides a film structure, which is applied to plasma equipment, including plasma etching equipment and plasma coating equipment, and is prepared by the above method, including:

[0087] A substrate 10; a multilayer ceramic coating located on one side of the substrate 10; the roughness and looseness of the multilayer ceramic coating gradually decrease from a side close to the substrate 10 to a side far from the substrate 10.

[0088] In a possible implementation, the multilayer ceramic coating may include a first ceramic coating 11, a second ceramic coating 12, and a third ceramic coating 13. Figure 2 FIG. 1 is a schematic diagram of a membrane structure provided in an embodiment of the present application, which can be prepared by the method described above, including:

[0089] Substrate 10;

[0090] A first ceramic coating 11 located on one side of the substrate 10;

[0091] A second ceramic coating 12 located on a side of the first ceramic coating 11 away from the substrate 10;

[0092] The third ceramic coating 13 is located on a side of the second ceramic coating 12 away from the substrate 10 .

[0093] In a possible implementation, the second ceramic coating 12 includes a first ceramic sub-coating 121 and a second ceramic sub-coating 122 .

[0094] The embodiment of the present application provides a film structure, and the method for preparing the film structure includes: providing a substrate; forming a first ceramic coating on the substrate by an atmospheric plasma spraying process or an evaporation process; forming a second ceramic coating on the side of the first ceramic coating away from the substrate by a suspension plasma spraying process; forming a third ceramic coating on the side of the second ceramic coating away from the substrate by a chemical vapor deposition process or a physical vapor deposition process. The first ceramic coating prepared by the atmospheric plasma spraying process or the evaporation process in the present application has good interface bonding force and is convenient for bonding with the substrate. The second ceramic coating prepared by the suspension plasma spraying process can reduce the roughness and porosity of the film structure. The third ceramic coating prepared by the chemical vapor deposition process or the physical vapor deposition process can further reduce defects such as cracks in the film structure. Thus, a smooth, dense and crack-free film structure surface is obtained. The smooth, dense and crack-free film structure is applied to the chamber lining of the plasma equipment, which helps to enhance the plasma cleaning function of the plasma cleaning on the process byproducts attached to the chamber lining in the plasma etching process, and can improve the stability and yield of the plasma etching process.

[0095] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the structural embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0096] The above is only a preferred implementation of the present application. Although the present application has been disclosed as a preferred embodiment, it is not intended to limit the present application. Any technician familiar with the art can use the above disclosed methods and technical contents to make many possible changes and modifications to the technical solution of the present application without departing from the scope of the technical solution of the present application, or modify it into an equivalent embodiment of equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application still falls within the scope of protection of the technical solution of the present application.

Claims

1. A method for preparing a film structure, characterized in that: The film layer structure is applied to plasma equipment, including: providing a substrate; A multilayer ceramic coating is formed on one side of the substrate; the roughness and looseness of the multilayer ceramic coating gradually decrease from the side close to the substrate to the side far away from the substrate.

2. The method according to claim 1, characterized in that The multi-layer ceramic coating comprises a first ceramic coating, a second ceramic coating and a third ceramic coating, and the multi-layer ceramic coating is formed on one side of the substrate, comprising: forming a first ceramic coating on the substrate by using an atmospheric plasma spraying process or an evaporation process; Using a suspension plasma spraying process, forming a second ceramic coating on a side of the first ceramic coating away from the substrate; A third ceramic coating is formed on a side of the second ceramic coating away from the substrate by using a chemical vapor deposition process, a physical vapor deposition process, a plasma enhanced chemical vapor deposition process or a plasma enhanced physical vapor deposition process.

3. The method according to claim 1, characterized in that: The material of the substrate includes aluminum or aluminum alloy.

4. The method according to claim 2, characterized in that: The material of the first ceramic coating includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride or yttrium aluminum garnet.

5. The method according to claim 2, characterized in that: The material of the second ceramic coating includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride or yttrium aluminum garnet.

6. The method according to claim 2, characterized in that The material of the third ceramic coating includes aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride or yttrium aluminum garnet.

7. The method according to claim 2, characterized in that The second ceramic coating includes a first ceramic sub-coating and a second ceramic sub-coating.

8. The method according to claim 2, characterized in that: The thickness of the first ceramic coating is greater than or equal to 50 μm and less than or equal to 500 μm.

9. The method according to claim 2, characterized in that: The thickness of the second ceramic coating is greater than or equal to 50 μm and less than or equal to 500 μm.

10. The method according to claim 2, characterized in that The thickness of the third ceramic coating is greater than or equal to 2 μm and less than or equal to 200 μm.

11. The method according to claim 2, characterized in that The porosity of the first ceramic coating is greater than or equal to 3% and less than or equal to 8%.

12. The method according to claim 2, characterized in that: The porosity of the second ceramic coating is less than or equal to 3%.

13. The method according to claim 2, characterized in that The porosity of the third ceramic coating is less than or equal to 0.1%.

14. The method according to claim 2, characterized in that The roughness of the first ceramic coating is greater than or equal to 3 μm and less than or equal to 8 μm.

15. The method according to claim 2, characterized in that The roughness of the second ceramic coating is greater than or equal to 1.0 μm and less than or equal to 4 μm.

16. The method according to claim 2, characterized in that The roughness of the third ceramic coating is less than or equal to 1 μm.

17. The method according to claim 3, characterized in that The aluminum alloy includes copper, silicon, iron, manganese, magnesium, zinc, chromium and / or titanium.

18. The method according to claim 17, characterized in that The aluminum alloy is 6061 aluminum plate alloy.

19. A film structure, characterized in that: The film structure is applied to plasma equipment, including plasma etching equipment and plasma coating equipment, and is prepared by the method according to any one of claims 1 to 19, including: substrate; A multilayer ceramic coating is located on one side of the substrate; the roughness and looseness of the multilayer ceramic coating gradually decrease from the side close to the substrate to the side far away from the substrate.

20. The structure according to claim 19, characterized in that The multi-layer ceramic coating comprises a first ceramic coating, a second ceramic coating and a third ceramic coating; The materials of the first ceramic coating, the second ceramic coating and the third ceramic coating include aluminum oxide, yttrium oxide, yttrium fluoride, yttrium oxyfluoride or yttrium aluminum garnet.

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