ceramic base

Abstract

The present invention relates to a ceramic base, and the ceramic base of the present invention can include an insulating plate configured with an electrode, a base body joined with the insulating plate and having a purge flow path, a hollow shaft joined with the base body and having one or more first through-holes in a side wall thereof in communication with the purge flow path, and a power supply rod connected with the electrode and extending to pass through an inner space of the shaft, and the purge flow path can include a correction hole for correcting a path, a correction flow path extending from the one or more first through-holes to the correction hole, and one or more flow paths extending from the correction hole to an edge.

Description

Technical Field

[0001] This invention relates to a ceramic base, and more particularly to a ceramic base in which air pumping for purging is uniformly formed on the upper surface of the base. Background Technology

[0002] Generally, semiconductor devices or display devices are manufactured through semiconductor engineering, which involves patterning multiple thin film layers, including dielectric and metal layers, sequentially stacked on a glass substrate, flexible substrate, or semiconductor wafer substrate. These thin film layers are sequentially deposited on the substrate using chemical vapor deposition (CVD) or physical vapor deposition (PVD) processes. The CVD processes include low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), and metal-organic chemical vapor deposition (MOCVD). Such CVD and PVD apparatuses include ceramic susceptors for supporting the glass substrate, flexible substrate, semiconductor wafer substrate, etc., and for handling semiconductor processes. These ceramic susceptors, located in the CVD and PVD apparatuses, may include chuck electrodes for supporting the substrate and heating wires for heating the substrate during heat treatment processes. In addition, the ceramic substrate can also be equipped with high-frequency (RF) electrodes instead of heating wires, or plasma can be formed during processes such as etching processes of thin film layers formed on the substrate by additionally equipping high-frequency (RF) electrodes.

[0003] However, conventional ceramic substrates have a structure that prevents the purge gas from being uniformly supplied across the entire upper surface of the substrate when supplied via purge holes or grooves on the upper surface where the substrate is placed. Therefore, improvements are needed. Specifically, the purge structure of conventional ceramic substrates may perform purges not only locally along a specific direction, but also only locally along a specific direction. In such cases, during deposition processes on substrates disposed on the ceramic substrate within the chamber of the device, uneven film deposition may occur, leading to reduced yield or poor deposition performance.

[0004] Therefore, a ceramic substrate is needed that can perform purging uniformly in all directions in which the substrate is placed. Summary of the Invention

[0005] The problem the invention aims to solve

[0006] Therefore, the present invention is proposed to solve the above-mentioned problems. The purpose of the present invention is to provide a base or ceramic base in which the purging correction hole of the base body is set at the center of the base body, and the length of all fluid paths to the outermost edge is formed to be the same through radially symmetrical branch flow paths, so that the air pump for purging is uniformly formed on the upper surface of the base.

[0007] Another object of the present invention is to provide a base or ceramic base in which two flow paths formed on the shaft are respectively connected to the purging correction hole and the chuck hole for vacuum suction of the base, thereby enabling the combined realization of the purging function based on the purging correction hole and the vacuum suction function based on the chuck hole.

[0008] means for solving problems

[0009] First, to summarize the features of the present invention, a ceramic base according to one aspect of the present invention for achieving the above-mentioned objectives may include: an insulating plate on which electrodes are disposed; a substrate joined to the insulating plate and provided with a purge flow path; a hollow shaft joined to the substrate and including one or more first through holes formed on the sidewall of the hollow shaft and communicating with the purge flow path; and a power supply rod connected to the electrodes and extending through the internal space of the hollow shaft, the purge flow path including: a correction hole for correcting the fluid path; a correction flow path extending from the one or more first through holes to the correction hole; and one or more flow paths extending from the correction hole to the edge of the substrate.

[0010] The one or more flow paths may include multiple branch flow paths, which extend radially from the correction hole to the edge of the substrate.

[0011] The multiple branch flow paths are preferably arranged in positions symmetrical about the origin with the correction hole as the center.

[0012] The correction hole is preferably located at the center of the substrate.

[0013] The one or more first through holes includes two or more through holes formed on the sidewall of the hollow shaft, and each of the correction flow paths extending from the two or more through holes meets in the correction hole.

[0014] The purging function can be performed by maintaining one or more first through holes at a positive pressure above atmospheric pressure.

[0015] It may also include a first through flow path formed between the upper surface of the insulating plate and the lower surface of the substrate, and the hollow shaft may also include one or more second through holes formed on the sidewall and communicating with the first through flow path.

[0016] The substrate disposed on the upper part of the insulating plate can be adsorbed by maintaining the second through hole at a negative pressure below atmospheric pressure.

[0017] The electrode can be one or more of the following: an electrode with plasma generation function, an electrode with electrostatic chuck function, or an electrode for heating element.

[0018] The substrate may include: a first layer including the correction flow path extending from the one or more first through holes to the correction hole; and a second layer including the correction hole and the one or more flow paths extending from the correction hole to the edge.

[0019] It may also include a first through flow path that extends from the upper surface of the insulating plate through the first layer and the second layer, and the hollow shaft may also include one or more second through holes formed on the sidewall and communicating with the first through flow path.

[0020] The substrate may include: a first layer including the correction flow path extending from the one or more first through holes to the correction hole; a second layer including the correction hole; and a third layer including the one or more flow paths extending from the correction hole to the edge.

[0021] It may also include a first through flow path that extends from the upper surface of the insulating plate through the first layer, the second layer and the third layer, and the shaft may also include one or more second through holes formed on the sidewall and communicating with the first through flow path.

[0022] The substrate may include: a first layer including an inlet hole formed as part of the corrective flow path, the inlet hole communicating with the one or more first through holes; a second layer including the corrective hole and a connecting flow path formed as a remaining part of the corrective flow path, the connecting flow path extending from the inlet hole to the corrective hole; and a third layer including the one or more flow paths extending from the corrective hole to the edge of the substrate.

[0023] It may also include a first through flow path that extends from the upper surface of the insulating plate through the first layer, the second layer and the third layer, and the shaft may also include one or more second through holes formed on the sidewall and communicating with the first through flow path.

[0024] Invention Effects

[0025] According to the ceramic substrate of the present invention, a purging correction hole is provided at the center of the substrate, and all fluid paths are made to have the same length up to the outermost edge through radially symmetrical branched flow paths, thereby enabling uniform air pumping for purging to be formed over the entire upper surface of the substrate. As described above, purging is uniformly achieved in all directions for placing the substrate, thereby enabling uniform deposition of thin films during deposition processes such as deposition on the substrate on the ceramic substrate, thereby increasing yield and improving deposition performance.

[0026] Furthermore, the ceramic base according to the present invention can achieve a composite function, namely, the flow path formed on the shaft and the purging correction hole on the base form a fluid flow passage, thereby performing a uniform purging function on the entire upper surface of the base, and the other flow paths formed on the shaft and the chuck hole for vacuum suction of the base form a fluid flow passage, thereby enabling an additional vacuum suction function. Attached Figure Description

[0027] To aid in understanding the invention, embodiments of the invention are provided in the accompanying drawings, which are included as part of the detailed description, and the technical concept of the invention is illustrated together with the detailed description.

[0028] Figure 1A This is a schematic cross-sectional view of a ceramic base according to a first embodiment of the present invention.

[0029] Figure 1B This is a schematic cross-sectional view of a ceramic base according to a second embodiment of the present invention.

[0030] Figure 1C This is a schematic cross-sectional view of a ceramic base according to a third embodiment of the present invention.

[0031] Figure 2A It shows the composition Figure 1A A diagram illustrating an embodiment of a multi-layered ceramic substrate. Figures 2B to 2E This shows the top and bottom views of each of the aforementioned layers.

[0032] Figure 3A It shows the composition Figure 1B A diagram illustrating an embodiment of a multi-layered ceramic substrate. Figures 3B to 3E This shows the top and bottom views of each of the aforementioned layers.

[0033] Figure 4A It shows the composition Figure 1A Figures of other embodiments of the ceramic substrate with multiple layers. Figures 4B to 4G This shows the top and bottom views of each of the aforementioned layers.

[0034] Figure 5A It shows the composition Figure 1B Figures of other embodiments of the ceramic substrate with multiple layers. Figures 5B to 5G This shows the top and bottom views of each of the aforementioned layers.

[0035] Figure 6A It shows the composition Figure 1A A diagram of yet another embodiment of the ceramic substrate with multiple layers. Figures 6B to 6G This shows the top and bottom views of each of the aforementioned layers.

[0036] Figure 7A It shows the composition Figure 1B A diagram of yet another embodiment of the ceramic substrate with multiple layers. Figures 7B to 7G This shows the top and bottom views of each of the aforementioned layers.

[0037] Explanation of reference numerals in the attached figures

[0038] 11: Substrate; 91: Suction cup hole; 110: Insulating plate; 120: Base; 130: Shaft; 131, 132: Power supply rod; 135: First through hole; 135-1: Inlet hole; 136: Second through hole; 136-1: First through flow path; 125: Purge flow path; 121: Correction flow path; 122: Correction hole; 123: Multiple branch flow paths. Detailed Implementation

[0039] The present invention will now be described in detail with reference to the accompanying drawings. In this description, the same constituent elements in each drawing will be indicated by the same reference numerals wherever possible. Furthermore, descriptions of known functions and / or configurations will be omitted. The following disclosure will primarily describe the parts necessary to understand the operation of various embodiments, and descriptions of elements that may obscure the essential points of the description will be omitted. Additionally, some constituent elements in the drawings may be enlarged, omitted, or shown schematically. The size of each constituent element does not necessarily reflect its actual size; therefore, the content described herein is not limited to the relative size or spacing of the constituent elements shown in each drawing.

[0040] When describing embodiments of the present invention, detailed descriptions of known technologies related to the present invention will be omitted if it is determined that such detailed descriptions would unnecessarily obscure the spirit of the invention. Furthermore, the terminology used below is defined in consideration of the functionality of the present invention and may vary depending on the intent of the user, operator, or precedent. Therefore, its definition should be based on the entire contents of this specification. The terminology used in this specification is merely for illustrating embodiments of the present invention and is not intended to be limiting. Unless otherwise stated, singular expressions should include plural expressions. Expressions such as "comprising" or "having" in this specification are used to refer to any feature, number, step, action, component, or combination thereof, and should not be construed as excluding the existence or additional possibility of more than one other feature, number, step, action, component, or combination thereof.

[0041] Furthermore, while terms such as "first" and "second" can be used to describe various constituent elements, the constituent elements are not limited to these terms. These terms are used only to distinguish one constituent element from another.

[0042] Figure 1A This is a schematic cross-sectional view of the ceramic base 100 according to the first embodiment of the present invention.

[0043] Figure 1B This is a schematic cross-sectional view of the ceramic base 200 according to a second embodiment of the present invention.

[0044] Reference Figure 1A and Figure 1B The ceramic base 200 of the second embodiment is substantially the same as the ceramic base 100 according to the first embodiment, but it is further provided with a first through flow path 136-1 formed between the upper surface 119 of the insulating plate 110 and the lower surface 129 of the base 120. The first through flow path 136-1 forms a chuck hole 91 for vacuum suction on the upper surface of the insulating plate 110, and the substrate 11 placed on the insulating plate 110 can be adsorbed and supported through the chuck hole 91.

[0045] Figure 1C This is a schematic cross-sectional view of a ceramic base 300 according to a third embodiment of the present invention.

[0046] Reference Figure 1C The ceramic base 300 of the third embodiment of the present invention is a modified example of the ceramic base 200 of the second embodiment, in which the electrode 112 is omitted, and the remaining structure is the same as that of the ceramic base 200 of the second embodiment.

[0047] That is, the base (ceramic base) 100, 200, 300 of the present invention includes an insulating plate 110 and a base 120 bonded together using an adhesive such as ceramic glue, and a hollow shaft 130 bonded together using an adhesive such as ceramic glue is included at the lower part of the base 120 to support the joints 110, 120. Depending on the situation, a connecting bracket 140 may be provided at the lower part of the shaft 130 to facilitate connection to a system such as a chamber of a semiconductor device.

[0048] Each power supply rod 131, 132, ... etc. is housed within an internal space formed through the shaft 130 and can be connected to electrodes 112 and / or heating elements 114 embedded in the insulating plate 110 to supply the required power. Each power supply rod 131, 132, etc. extends from the internal space of the shaft 130 and passes through a connecting bracket 140 having an outer sealed form (e.g., a rigid body or a member with a hollow space) before extending to the outside.

[0049] The ceramic substrates 100, 200, and 300 of the present invention can have a heating function that uses a heating element 114 to heat the corresponding processing target substrate 11 to a predetermined temperature in a semiconductor process. Additionally, the ceramic substrates 100 and 200 of the present invention can have an electrode 112, which can function as a chuck electrode performing an electrostatic chuck function for supporting the substrate 11 placed on an insulating plate 110, or as a plasma electrode performing a plasma generation function for processes such as dry etching in plasma-enhanced chemical vapor deposition or reactive ion etching (RIE) equipment. This can be a different function from the vacuum chuck function of supporting the substrate 11 through the chuck hole 91.

[0050] Therefore, the insulating plate 110 can be configured to have the heating element 114 disposed (embedded) between the ceramic materials. Depending on the situation, it can also be configured to have the electrode 112 disposed (embedded) at a predetermined interval from the heating element 114. In addition, depending on the situation, it can also be configured to have suction cup electrodes (multiple suction cup electrodes) disposed (embedded) at a predetermined interval on the upper or lower side of the heating element 114.

[0051] As described above, the insulating plate 110 can be configured to stably support the target substrate while enabling the execution of different semiconductor processes by utilizing the heating element 114 and / or the electrostatic chuck function or plasma generation function of the electrode 112. The insulating plate 110 can be made of a plate-like structure with a predetermined shape. For example, the insulating plate 110 can be made of a circular plate-like structure, but is not limited thereto. The ceramic material can be at least one of Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC (Autoclaved lightweight concrete), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite, and AlF3, preferably aluminum nitride (AlN). Furthermore, the ceramic material powder can be molded and sintered to form the insulating plate 110, for which each ceramic powder can selectively include 0.1% to 10% (preferably about 1% to 5%) of yttrium oxide powder.

[0052] The heating element (or heating electrode) 114 can be formed as a plate-shaped coil or a flat plate formed of a heating wire (or resistance wire). Alternatively, the heating element 114 can be formed as a multi-layer structure for precise temperature control. The heating element 114 is connected to a power source via power supply rods 131 and 132, thereby providing a power supply. Furthermore, in order to perform substrate heating, deposition processes, and etching processes during semiconductor manufacturing, it can perform the function of heating the target substrate 11 on the insulating plate 110 to a predetermined temperature. The power supply rods 131 and 132 pass through the internal space of the shaft 130, through a predetermined partition plate of the connecting bracket 140, and then through the connecting bracket 140, extending outwards.

[0053] Electrode 112 may be made of tungsten (W), molybdenum (Mo), silver (Ag), gold (Au), niobium (Nb), titanium (Ti), aluminum nitride (AlN), or alloys thereof, preferably molybdenum (Mo). Electrode 112 may be connected to a power supply terminal (e.g., ground) via a power supply rod (not shown) other than the power supply rods 131, 132 for the heating element 114. The power supply rod (not shown) for electrode 112 also extends outward through the internal space of shaft 130, through a predetermined partition plate of connecting bracket 140, and then through connecting bracket 140.

[0054] The shaft 130 is formed as a hollow structure with a through-hole, and is bonded to the lower surface of the joint between the insulating plate 110 and the substrate 120. The shaft 130 can be made of a ceramic material to bond with the insulating plate 110. The ceramic material can be at least one of Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC (Autoclaved lightweight concrete), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite, and AlF3, preferably aluminum nitride (AlN). Furthermore, the shaft 130 can be formed by molding and sintering the ceramic powder, for which each ceramic powder may selectively include 0.1% to 10% (preferably about 1% to 5%) of yttrium oxide powder.

[0055] The connecting bracket 140 can be made of a metal such as aluminum (Al) or a ceramic material as described above. Specifically, the ceramic material can be at least one of Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC (autoclaved lightweight concrete), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite, and AlF3, preferably aluminum nitride (AlN). Furthermore, the ceramic powder can be molded and sintered to form the shaft 130, for which each ceramic powder can optionally include 0.1% to 10% (preferably about 1% to 5%) of yttrium oxide powder.

[0056] Re-reference Figures 1A to 1CThe substrate 120, which is bonded to the lower part of the insulating plate 110, has a purge flow path 125. The upper end of the sidewall of the hollow shaft 130 is bonded to the substrate 120, and the shaft 130 has one or more first through holes 135 formed on its sidewall and communicating with the purge flow path 125. The substrate 120 may be made of a ceramic material. The ceramic material may be at least one of Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC (Autoclaved lightweight concrete), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite, and AlF3, preferably aluminum nitride (AlN). Furthermore, the powder of the ceramic material may be molded and sintered to form the shaft 130, for which each ceramic powder may optionally include 0.1% to 10% (preferably about 1% to 5%) of yttrium oxide powder.

[0057] The purge flow path 125 includes a straightening flow path 121, a straightening hole 122, and a plurality of branch flow paths 123. The straightening flow path 121 is a flow path portion extending from the first through hole 135 of the shaft 130 to the straightening hole 122 for straightening the path. The straightening hole 122 can be designed to have a predetermined diameter larger than the diameter of the straightening flow path 121 and can be formed vertically at an appropriate height on the upper surface of the insulating plate 110. The branch flow paths 123 are flow paths extending radially from the straightening hole 122 to the edge of the substrate 120 (see reference). Figure 2E , Figure 3E , Figure 4F , Figure 5F , Figure 6F , Figure 7F ).

[0058] As described in more detail below, the corrective hole 122 is preferably located at the center of the base 120, but it can also be configured at other locations as appropriate. Furthermore, a plurality of branch flow paths 123 are configured to connect / communicate with the corrective hole 122, preferably arranged at positions symmetrical about the origin centered on the corrective hole 122. Although two or more first through holes 135 formed on the sidewall of the shaft 130 are shown in the figures, one or more suitable numbers can also be formed on the sidewall of the shaft 130. Each corrective flow path 121 extending from the plurality of through holes 135 as described above can be configured to meet at the corrective hole 122 and extend radially together with the branch flow paths 123.

[0059] The purging function can be performed by maintaining a positive pressure above atmospheric pressure at the first through-hole 135 as described above. For example, the purging function can be performed by maintaining a pressure above atmospheric pressure through positive pressure air pumping (suction) based on the first through-hole 135 of the shaft 130. At this time, a predetermined air pump (not shown) can pump injected air through the first through-hole 135 at a predetermined pressure above atmospheric pressure. For example, purging can be performed by pumping air containing a specified gas (e.g., inert gases such as nitrogen, He, Ar, etc.) into the chambers of the aforementioned CVD and PVD devices by positive pressure air pumping through the first through-hole 135.

[0060] In addition to the common features of ceramic bases 100, 200, and 300 as described above, in Figure 1B In the second embodiment, the ceramic base 200 further includes a first through-flow path 136-1, which is formed to pass between the upper surface 119 of the insulating plate 110 and the lower surface 129 of the base 120. Correspondingly, the shaft 130 may also include one or more second through holes 136 formed on its sidewall and communicating with the first through-flow path 136-1.

[0061] As described above, the second through hole 136 can perform a vacuum suction function for adsorbing the substrate 11 disposed on the upper part of the insulating plate 110 by maintaining a negative pressure below atmospheric pressure. That is, the first through flow path 136-1 forms a suction hole 91 for vacuum suction on the upper surface of the insulating plate 110, and the substrate 11 placed on the insulating plate 110 can be adsorbed and supported through the suction hole 91.

[0062] For example, one or more suction cup holes 91 exposed on the upper surface of the insulating plate 110 may meet a groove formed on the upper surface of the insulating plate 110. The groove formed on the upper surface of the insulating plate 110 can be implemented in various ways to allow the substrate 11 to be adsorbed and supported by negative pressure from one or more suction cup holes 91. For example, the groove formed on the upper surface of the insulating plate 110 can be designed to be integrally connected so as to stably adsorb the substrate 11 by negative pressure from the suction cup holes 91.

[0063] As described above, the ceramic substrate 200 of the present invention is configured to enable the chucking and dechucking of the substrate 11 by negative pressure air pumping through the second through hole 136. At this time, while stably supporting the processing target substrate 11 on the insulating plate 110, various semiconductor processes such as heating based on the heating element 114 and / or plasma deposition or dry etching based on the electrode 112 can be performed.

[0064] According to embodiments of the present invention, the ceramic bases 100, 200, and 300 have a purging correction hole 122 disposed at the center of the base 120, and the radially symmetrical branch flow paths 123 are used to make all fluid paths have the same length up to the outermost (outermost) edge of the insulating plate 110, thereby enabling uniform air pumping for purging to be formed on the entire upper surface of the base.

[0065] In addition, Figure 1B and Figure 1C In the case of the ceramic base 200 of the second embodiment, a composite function can be achieved, namely, the flow path formed on the shaft 130 and the purging correction hole 122 on the base are in fluid communication to perform a uniform purging function on the upper surface of the base, and the other flow path 136 formed on the shaft 130 and the chuck hole for vacuum suction on the base are in fluid communication to additionally perform a vacuum suction function.

[0066] The following is based on reference Figures 2A to 2E , Figures 4A to 4G as well as Figures 6A to 6G (is to be) Figure 1A The ceramic base 100 of the first embodiment of the present invention will be described in more detail by referring to the enlarged and upside-down accompanying drawings of the base. Figures 3A to 3E , Figures 5A to 5G as well as Figures 7A to 7G (is to be) Figure 1B The ceramic base 200 and ceramic base 300 of the present invention will be described in more detail with reference to the enlarged and flipped drawings of the base. The ceramic base 300 according to the third embodiment is a modification of the ceramic base 200 according to the second embodiment, in which the electrode 112 is omitted. Therefore, anyone skilled in the art can easily grasp the structure of the ceramic base 200 according to the second embodiment by referring to it.

[0067] Figure 2A It shows the composition Figure 1A A diagram of an embodiment of the multiple layers 311, 312 of the substrate 120 of the ceramic base 100. Figure 2B and Figure 2C These show the top view and bottom view of the first layer 311, respectively. Figure 2D and Figure 2E These are the top and bottom views of the second layer 312, respectively.

[0068] Reference Figure 2AAccording to the present invention, the substrate 120 of the ceramic base 100 may include a first layer 311 and a second layer 312. The first layer 311 and the second layer 312 are manufactured separately, thereby allowing them to be bonded using ceramic adhesives or the like, and allowing them to be laminated using molding and sintering of each layer when filling with powdered material or when multiple sheets are laminated.

[0069] Reference Figure 2B and Figure 2C The first layer 311 may include a correction flow path 121, which extends from one or more first through holes 135 of the shaft 130 to a correction hole 122.

[0070] Reference Figure 2D and Figure 2E The second layer 312 may include correction holes 122 and may include a plurality of branch flow paths 123, which extend radially from the plurality of correction holes 122 to the edge of the substrate 120 / insulating plate 110.

[0071] Figure 3A It shows the composition Figure 1B A diagram of an embodiment of the multiple layers 411, 412 of the substrate 120 of the ceramic base 200. Figure 3B and Figure 3C These are the top and bottom views of the first layer 411, respectively. Figure 3D and Figure 3E These are the top and bottom views of the second layer 412, respectively.

[0072] Reference Figure 3A According to the invention, the substrate 120 of the ceramic base 200 may include a first layer 411 and a second layer 412. The first layer 411 and the second layer 412 are manufactured separately, thereby allowing them to be bonded using ceramic adhesives or the like, and allowing them to be laminated using molding and sintering of each layer when using filler powder or multiple sheets.

[0073] Figure 3A The structure of the ceramic base 200 of the present invention and Figure 2A The structure is similar, but it also includes a first through-flow path 136-1 penetrating the first layer 411 and the second layer 412 from the upper surface of the insulating plate 110. The first through-flow paths 136-1 are configured at different locations relative to each other in such a way that they do not encounter and communicate with the corrective flow path 121 or the branch flow path 123 in their path direction. At this time, the shaft 130 includes one or more second through holes 136 formed on its sidewall and communicating with the first through-flow path 136-1. The first through holes 135 and the second through holes 136 of the shaft 130 are not interconnected.

[0074] Reference Figure 3B and Figure 3CThe first layer 411 may include a correction flow path 121, which extends from one or more first through holes 135 of the shaft 130 to a correction hole 122.

[0075] Reference Figure 3D and Figure 3E The second layer 412 may include correction holes 122 and may include a plurality of branch flow paths 123, which extend radially from the plurality of correction holes 122 to the edge of the substrate 120 / insulating plate 110.

[0076] Figure 4A It shows the composition Figure 1A A diagram of an embodiment of the multiple layers 511, 512, 513 of the substrate 120 of the ceramic base 100. Figure 4B and Figure 4C These are the top and bottom views of the first layer 511, respectively. Figure 4D and Figure 4E These are the top and bottom views of the second layer 512, respectively. Figure 4F and Figure 4G These are the top and bottom views of the third layer 513, respectively.

[0077] Reference Figure 4A According to the present invention, the substrate 120 of the ceramic base 100 may include a first layer 511, a second layer 512, and a third layer 513. The first layer 511, the second layer 512, and the third layer 513 are manufactured separately, thereby allowing them to be bonded using ceramic adhesives or the like, and to be laminated using molding and sintering of each layer when using filler material powder or multiple sheets.

[0078] Reference Figure 4B and Figure 4C The first layer 511 includes a correction flow path 121, which extends from one or more first through holes 135 to a correction hole 122.

[0079] Reference Figure 4D and Figure 4E The second layer 512 is the layer with the correction holes 122 formed.

[0080] Reference Figure 4F and Figure 4G The third layer 513 includes a plurality of branch flow paths 123, which extend radially from the correction hole 122 to the edge of the substrate 120 / insulating plate 110.

[0081] Figure 5A It shows the composition Figure 1B A diagram illustrating an embodiment of the multiple layers 611, 612, 613 of the substrate 120 of the ceramic base 200. Figure 5B and Figure 5CThese are the top and bottom views of the first layer 611, respectively. Figure 5D and Figure 5E These are the top and bottom views of the second layer 612, respectively. Figure 5F and Figure 5G These are the top and bottom views of the third layer 613, respectively.

[0082] Reference Figure 5A According to the present invention, the substrate 120 of the ceramic base 200 may include a first layer 611, a second layer 612, and a third layer 613. The first layer 611, the second layer 612, and the third layer 613 are manufactured separately, thereby allowing them to be bonded using ceramic adhesives or the like, and allowing them to be laminated using molding and sintering of each layer when using filler powder or multiple sheets.

[0083] Figure 5A The structure of the ceramic base 200 of the present invention and Figure 4A The structure is similar, but it also includes a first through-flow path 136-1 penetrating the first layer 611, the second layer 612, and the third layer 613 from the upper surface of the insulating plate 110. The first through-flow paths 136-1 are configured at different locations relative to each other in such a way that they do not encounter or communicate with the corrective flow path 121 or the branch flow path 123 in their path direction. At this time, the shaft 130 also includes one or more second through holes 136 formed on its sidewall and communicating with the first through-flow path 136-1. The first through holes 135 and the second through holes 136 of the shaft 130 are not communicating with each other.

[0084] Reference Figure 5B and Figure 5C The first layer 611 includes a correction flow path 121, which extends from one or more first through holes 135 to a correction hole 122.

[0085] Reference Figure 5D and Figure 5E The second layer 612 is the layer with the correction holes 122 formed.

[0086] Reference Figure 5F and Figure 5G The third layer 513 includes a plurality of branch flow paths 123, which extend radially from the correction hole 122 to the edge of the substrate 120 / insulating plate 110.

[0087] Figure 6A It shows the composition Figure 1A A diagram illustrating an embodiment of the multiple layers 711, 712, 713 of the substrate 120 of the ceramic base 100. Figure 6B and Figure 6C These are the top and bottom views of the first layer 711, respectively. Figure 6D and Figure 6EThese are the top and bottom views of the second layer 712, respectively. Figure 6F and Figure 6G These are the top and bottom views of the third layer 713, respectively.

[0088] Reference Figure 6A The substrate 120 of the ceramic base 100 according to the present invention may include a first layer 711, a second layer 712 and a third layer 713. The first layer 711, the second layer 712 and the third layer 713 are manufactured separately, thereby allowing them to be bonded using ceramic adhesives or the like, and to be laminated using molding and sintering of each layer when using filler material powder or multiple sheets.

[0089] Reference Figure 6B and Figure 6C The first layer 711 includes an inlet hole 135-1 formed as part of the correction flow path 121, the inlet hole 135-1 communicating with one or more first through holes 135.

[0090] Reference Figure 6D and Figure 6E The second layer 712 includes a connecting flow path that forms a remaining portion of the correction flow path 121, the connecting flow path extending from the inlet hole 135-1 to the correction hole 122, and the second layer 712 also includes the correction hole 122.

[0091] Reference Figure 6F and Figure 6G The third layer 713 includes a plurality of branch flow paths 123, which extend radially from the correction hole 122 to the edge of the substrate 120 / insulating plate 110.

[0092] Figure 7A It shows the composition Figure 1B A diagram illustrating an embodiment of the multiple layers 811, 812, 813 of the substrate 120 of the ceramic base 200. Figure 7B and Figure 7C These are the top and bottom views of the first layer 811, respectively. Figure 7D and Figure 7E These are the top and bottom views of the second layer 812, respectively. Figure 7F and Figure 7G These are the top and bottom views of the third layer 813, respectively.

[0093] Reference Figure 7A According to the present invention, the substrate 120 of the ceramic base 200 may include a first layer 811, a second layer 812, and a third layer 813. The first layer 811, the second layer 812, and the third layer 813 are fabricated separately, thereby allowing bonding using ceramic adhesives or the like, and allowing stacking using molding and sintering of each layer when using filler material powder or multiple sheets.

[0094] Figure 7A The structure of the ceramic base 200 of the present invention and Figure 6A The structure is similar, but it also includes a first through-flow path 136-1 that extends from the upper surface of the insulating plate 110 through the first layer 811, the second layer 812, and the third layer 813. The first through-flow paths 136-1 are configured at different locations relative to each other in such a way that they do not encounter or communicate with the corrective flow path 121 or the branch flow path 123 in their path direction. At this time, the shaft 130 also includes one or more second through holes 136 formed on its sidewall that communicate with the first through-flow path 136-1. The first through holes 135 and the second through holes 136 of the shaft 130 are not interconnected.

[0095] Reference Figure 7B and Figure 7C The first layer 811 includes an inlet hole 135-1, which is part of the correction flow path 121 and communicates with one or more first through holes 135.

[0096] Reference Figure 7D and Figure 7E The second layer 812 includes a connecting flow path that is a remaining portion of the correction flow path 121 and extends from the inlet hole 135-1 to the correction hole 122. The second layer 812 also includes the correction hole 122.

[0097] Reference Figure 7F and Figure 7G The third layer 813 includes a plurality of branch flow paths 123, which extend radially from the correction hole 122 to the edge of the substrate 120 / insulating plate 110.

[0098] As described above, in the ceramic substrates 100, 200, and 300 according to embodiments of the present invention, a purging correction hole 122 is provided at the center of the substrate 120, and radially symmetrical branched flow paths 123 are used to ensure that all fluid paths have the same length up to the outermost edge of the insulating plate 110, thereby enabling uniform air pumping for purging to be formed over the entire upper surface of the substrate. As described above, purging is uniformly achieved in all directions for placing the substrate, thereby enabling uniform deposition of thin films during deposition processes such as those performed on the substrate on the ceramic substrate, thereby increasing yield and improving deposition performance. Furthermore, in Figure 1BIn the case of the ceramic base 200 of the second embodiment, a composite function can be achieved, namely, the flow path formed on the shaft 130 and the purging correction hole 122 on the base form a fluid passage, thereby performing a uniform purging function on the entire upper surface of the base, and the other flow path 136 formed on the shaft 130 and the chuck hole for vacuum suction of the base form a fluid passage, thereby additionally achieving a vacuum suction function.

[0099] As described above, specific details, limited embodiments, and accompanying drawings, such as specific constituent elements, have been illustrated in this invention. However, this is provided merely to aid in understanding the overall nature of the invention, and the invention is not limited to the described embodiments. Those skilled in the art can make various modifications and alterations without departing from the essential characteristics of the invention. Therefore, the spirit of the invention should not be limited to the illustrated embodiments and should not be construed as such. All technical ideas equivalent to or modified from the appended claims, except for those appended claims, should be interpreted as being included within the scope of this invention.

Claims

1. A base, characterized in that, include: Insulating plate, equipped with electrodes, The substrate, bonded to the insulating plate, has a purge flow path. A hollow shaft, joined to the substrate and including one or more first through holes, the one or more first through holes being formed in the sidewall of the hollow shaft and communicating with the purge flow path, and A power supply rod is connected to the electrode and extends through the internal space of the hollow shaft; The purging flow path includes: Correction holes, used for path correction, are located at the center of the substrate. The corrective flow path extends from one or more first through holes to the corrective hole, and One or more flow paths extend from the correction hole to the edge of the substrate; The one or more flow paths include multiple branch flow paths, which extend radially from the correction hole to the edge of the substrate. The multiple branch flow paths are arranged at positions symmetrical about the origin with the correction hole as the center.

2. The base according to claim 1, characterized in that, The one or more first through holes includes two or more through holes formed in the sidewall of the hollow shaft. Each of the corrective flow paths extending from the two or more through holes meets at the corrective hole.

3. The base according to claim 1, characterized in that, The purging function is performed by maintaining one or more first through holes at a positive pressure above atmospheric pressure.

4. The base according to claim 1, characterized in that, It also includes a first through-flow path, which extends between the upper surface of the insulating plate and the lower surface of the substrate. The hollow shaft also includes one or more second through holes, which are formed in the sidewall and communicate with the first through flow path.

5. The base according to claim 4, characterized in that, The substrate disposed on the upper part of the insulating plate is adsorbed by maintaining the one or more second through holes at a negative pressure below atmospheric pressure.

6. The base according to claim 1, characterized in that, The electrode is one or more of the following: an electrode with plasma generation function, an electrode with electrostatic chuck function, or an electrode for heating element.

7. The base according to claim 1, characterized in that, The matrix includes: The first layer includes the corrective flow path extending from the one or more first through holes to the corrective hole; and The second layer includes the correction hole and includes one or more flow paths extending from the correction hole to the edge of the substrate.

8. The base according to claim 7, characterized in that, It also includes a first through-flow path, which extends from the upper surface of the insulating plate through the first layer and the second layer. The hollow shaft also includes one or more second through holes, which are formed in the sidewall and communicate with the first through flow path.

9. The base according to claim 1, characterized in that, The matrix includes: The first layer includes the correction flow path extending from one or more first through holes to the correction hole; The second layer includes the corrective hole; and The third layer includes one or more flow paths extending from the correction hole to the edge.

10. The base according to claim 9, characterized in that, It also includes a first through-flow path, which extends from the upper surface of the insulating plate through the first layer, the second layer, and the third layer. The hollow shaft also includes one or more second through holes, which are formed in the sidewall and communicate with the first through flow path.

11. The base according to claim 1, characterized in that, The matrix includes: The first layer includes an inlet hole formed as part of the correction flow path, the inlet hole communicating with the one or more first through holes; The second layer includes the corrective orifice and a connecting flow path forming a remaining portion of the corrective flow path, the connecting flow path extending from the inlet orifice to the corrective orifice; and The third layer includes one or more flow paths extending from the correction hole to the edge of the substrate.

12. The base according to claim 11, characterized in that, It also includes a first through-flow path, which extends from the upper surface of the insulating plate through the first layer, the second layer, and the third layer. The hollow shaft also includes one or more second through holes, which are formed in the sidewall and communicate with the first through flow path.

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