Double-ground metal-through-hole-free all-metal integrated waveguide structure

CN119786929AActive Publication Date: 2025-04-08TIANJIN UNIV
-1 Cites -1 Cited by

Patent Information

Application Number
CN202411788151.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-06
Publication Date
2025-04-08
Estimated Expiration
2044-12-06

Smart Images

  • Figure CN119786929A_ABST
    Figure CN119786929A_ABST
Patent Text Reader

Abstract

The invention discloses a double-ground metal-through-hole-free all-metal integrated waveguide structure, which comprises multiple layers of metal plates, the multiple layers of metal plates are stacked and connected to form a self-packaging structure, a top-layer metal plate and a bottom-layer metal plate are of ground structures, and two internal metal plates are partially cut off to form an air-filled cavity structure. The two metal plates forming the cavity structure are clamped on the middle metal plate, and a microwave radio frequency circuit is arranged on the middle metal plate, so that the cavity structure of the MIW is achieved. The all-metal integrated structure thoroughly eliminates the dielectric loss, and is beneficial to the realization of lower loss and higher quality factor of the MIW circuit.
Need to check novelty before this filing date? Find Prior Art