Double-ground metal-through-hole-free all-metal integrated waveguide structure
CN119786929AActive Publication Date: 2025-04-08TIANJIN UNIV
-1 Cites -1 Cited by
Patent Information
- Application Number
- CN202411788151.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-06
- Publication Date
- 2025-04-08
- Estimated Expiration
- 2044-12-06
Smart Images

Figure CN119786929A_ABST
Abstract
The invention discloses a double-ground metal-through-hole-free all-metal integrated waveguide structure, which comprises multiple layers of metal plates, the multiple layers of metal plates are stacked and connected to form a self-packaging structure, a top-layer metal plate and a bottom-layer metal plate are of ground structures, and two internal metal plates are partially cut off to form an air-filled cavity structure. The two metal plates forming the cavity structure are clamped on the middle metal plate, and a microwave radio frequency circuit is arranged on the middle metal plate, so that the cavity structure of the MIW is achieved. The all-metal integrated structure thoroughly eliminates the dielectric loss, and is beneficial to the realization of lower loss and higher quality factor of the MIW circuit.
Need to check novelty before this filing date? Find Prior Art