A method of element separation

Abstract

The embodiment of the present application provides an element separation method, which is applied to an element separation system, and the element separation system comprises an ion source, a vacuum chamber and a receiving device. The ion source comprises a gasification mechanism, a plasma generation mechanism and an extraction mechanism. The element separation method comprises the following steps: filling the to-be-separated raw material in the gasification mechanism. The gasification mechanism is controlled to gasify the to-be-separated raw material to form saturated vapor. The saturated vapor is controlled to enter an ionization chamber, the ionization chamber is controlled to emit electrons, and the saturated vapor is ionized to form plasma. An electric field generator is controlled to generate an electric field, the plasma in the electric field is accelerated, and the plasma is controlled to be injected into the vacuum chamber from an outlet. A magnetic field generator is controlled to generate a magnetic field, the plasma in the magnetic field is subjected to a deflection force, and the plasma is controlled to be injected towards a receiving panel. The receiving panel is controlled to collect the plasma, wherein the receiving panel can be used to collect at least two different plasmas. The element separation efficiency is improved.

Description

Technical Field

[0001] This application relates to the field of element separation technology, and in particular to an element separation method. Background Technology

[0002] High-abundance stable isotopes have been widely used in recent years, but the natural abundance of each element varies, necessitating the separation and enrichment of different elements. Among related technologies, element separation methods suffer from low separation efficiency, failing to meet the demands of large-scale element separation. Summary of the Invention

[0003] In view of this, embodiments of this application provide an element separation method to improve element separation efficiency.

[0004] To achieve the above objectives, this application provides an element separation method applied to an element separation system. The element separation system includes an ion source, a vacuum chamber, and a receiving device. The ion source includes a vaporization mechanism, a plasma generation mechanism, and an extraction mechanism. The plasma generation mechanism includes an ionization chamber, the extraction mechanism includes an electric field generator, and the vacuum chamber includes a magnetic field generator. The receiving device includes a receiving panel, and the outlet of the extraction mechanism and the receiving panel are spaced apart within the vacuum chamber. The element separation method includes:

[0005] The raw material to be separated is loaded into the gasification mechanism;

[0006] The gasification mechanism is controlled to gasify the raw material to be separated to form saturated steam;

[0007] The saturated vapor is controlled to enter the ionization chamber, and the ionization chamber is controlled to emit electrons, thereby ionizing the saturated vapor to form plasma;

[0008] The electric field generator is controlled to generate an electric field, which accelerates the plasma within the electric field, and the plasma is controlled to be injected into the vacuum chamber from the outlet.

[0009] The magnetic field generator is controlled to generate a magnetic field, which applies a deflection force to the plasma within the magnetic field and controls the plasma to be directed toward the receiving panel.

[0010] The receiving panel is controlled to collect the plasma, wherein the receiving panel is capable of collecting at least two different types of plasma.

[0011] In one embodiment, the filling of the raw material to be separated within the gasification mechanism includes:

[0012] Different types of raw materials to be separated are packed into the gasification mechanism;

[0013] The gasification temperature of the gasification mechanism is adjusted to the maximum gasification temperature among the gasification temperatures of each of the raw materials to be separated; and / or,

[0014] The arc voltage of the plasma generation mechanism is adjusted to the maximum ionization arc voltage among the ionization arc voltages of each of the raw materials to be separated; and / or,

[0015] The current of the plasma generation mechanism is adjusted to the maximum ionization current among the ionization currents of each of the raw materials to be separated.

[0016] In one embodiment, the gasification mechanism includes at least two receiving devices, and the filling of the gasification mechanism with different types of raw materials to be separated includes:

[0017] Different types of raw materials to be separated are filled into the at least two containers.

[0018] In one embodiment, the gasification mechanism includes a containing device, and the filling of different types of raw materials to be separated within the gasification mechanism includes:

[0019] At least two of the raw materials to be separated are fused into an alloy;

[0020] The alloy is placed inside the receiving device.

[0021] In one embodiment, the ratio of the relative elemental masses of each of the raw materials to be separated is greater than or equal to 0.9 and less than or equal to 1.1.

[0022] In one embodiment, the difference in ionization arc voltage of each of the raw materials to be separated is greater than or equal to -1000V and less than or equal to 1000V.

[0023] In one embodiment, the difference in ionization current of each of the raw materials to be separated is greater than or equal to -500A and less than or equal to 500A.

[0024] In one embodiment, the receiving device includes a current detector disposed on the receiving panel, and controlling the receiving panel to collect the plasma includes:

[0025] The current detector is controlled to detect the current offset on the receiving panel;

[0026] If the current offset is not within the deviation error range, the current offset can be reduced by adjusting the arc voltage and current of the plasma generation mechanism.

[0027] If the current offset is within the deviation error range, the plasma is collected through the receiving panel.

[0028] In one embodiment, the deviation error is defined as the difference between the maximum and minimum values ​​of the current under a given flow rate intensity not exceeding 2A.

[0029] In one embodiment, the receiving panel collects the plasma by:

[0030] Adjust the distance between the receiving panel and the outlet so that the current detector can detect the current generated by the plasma.

[0031] The element separation method provided in this application involves a gasification mechanism that converts the raw material to be separated into saturated vapor, followed by ionization into plasma by a plasma generation mechanism. An extraction mechanism accelerates the plasma, transforming the raw material into an easily separable plasma state. A vacuum chamber and its internal magnetic field generator deflect the plasma using a magnetic field, enabling the separation of different types of plasma. The extraction mechanism outlet and the receiving panel are spaced apart within the vacuum chamber. By configuring the receiving panel to collect the separated plasmas of different types, element separation can be achieved. Furthermore, multiple elements can be separated simultaneously with a single loading of the raw material, improving separation efficiency and meeting the needs of large-scale element separation. Attached Figure Description

[0032] Figure 1 This is a schematic diagram of the element separation system in one embodiment of this application;

[0033] Figure 2 This is a schematic diagram of the ion source structure in one embodiment of this application;

[0034] Figure 3 This is a flowchart of an element separation method in one embodiment of this application.

[0035] Figure label:

[0036] 10. Element separation system; 1. Ion source; 11. Vaporization mechanism; 111. Containing device; 1111. First containing cavity; 1112. First opening; 112. Heating element; 12. Plasma generation mechanism; 121. Ionization chamber; 1211. Second containing cavity; 1212. Second opening; 1213. Third opening; 13. Extraction mechanism; 131. Electric field generator; 1311. Containing area; 1312. Fourth opening; 1313. Fifth opening; 132. First extraction plate; 133. Second extraction plate; 14. Support member; 2. Receiving device; 21. Receiving panel; 3. Vacuum chamber; 31. Magnetic field generator. Detailed Implementation

[0037] It should be noted that, unless otherwise specified, the embodiments and technical features in the embodiments of this application can be combined with each other, and the detailed descriptions in the specific implementation should be understood as explanations of the purpose of this application and should not be regarded as undue limitations on this application.

[0038] In the description of the embodiments of this application, it should be noted that the terms "ray transmission direction," "height direction," "first direction," "second direction," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These orientation terms are only for the convenience of describing the embodiments of this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application. The application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0039] This application provides an embodiment; please refer to [the example provided]. Figures 1 to 2 The element separation system 10 includes an ion source 1, a vacuum chamber 3, and a receiving device 2. The ion source 1 includes a vaporization mechanism 11, a plasma generation mechanism 12, and an extraction mechanism 13. The plasma generation mechanism 12 includes an ionization chamber 121, the extraction mechanism 13 includes an electric field generator 131, and the vacuum chamber 3 includes a magnetic field generator 31. The receiving device 2 includes a receiving panel 21, and the outlet of the extraction mechanism 13 and the receiving panel 21 are spaced apart within the vacuum chamber 3.

[0040] Ion source 1 is a device that ionizes neutral atoms or molecules and extracts the generated ions. In the embodiments of this application, ion source 1 is the starting part of element separation system 10, responsible for performing a series of processes on the raw materials to be separated to form an ionic state that can be subsequently processed. Ion source 1 includes several parts such as vaporization mechanism 11, plasma generation mechanism 12, and extraction mechanism 13, which work together to achieve ion generation and preliminary processing.

[0041] The gasification mechanism 11 vaporizes the raw material to be separated into saturated vapor. The raw material to be separated may be a substance existing in solid or liquid form. The gasification mechanism 11 uses certain physical or chemical means, such as heating or depressurization, to convert the raw material into a gaseous saturated vapor state for subsequent ionization and other operations.

[0042] For example, the gasification unit 11 can be equipped with a precise temperature control system to more accurately control the gasification temperature of the raw material to be separated, ensuring the formation of stable and appropriately concentrated saturated vapor. The gasification unit 11 can also be equipped with a gas flow monitoring device to monitor the flow rate of the vaporized steam in real time, so as to make adjustments as needed.

[0043] The plasma generation mechanism 12 has an ionization chamber 121, which ionizes the saturated vapor generated by the vaporization mechanism 11 to form plasma.

[0044] Ionization refers to the process of giving atoms or molecules sufficient energy to cause their outer electrons to detach from the atomic nucleus, forming positively charged ions and free electrons. In the ionization chamber 121, suitable ionization methods such as electron collisions and radio frequency discharge are used to ionize saturated vapor, thereby producing plasma, a state of matter containing a large number of ions, electrons, and neutral particles, and which is electrically neutral overall.

[0045] The extraction mechanism 13 includes an electric field generator 131, which generates an electric field. The electric field accelerates the plasma, enabling it to move in a predetermined direction and velocity, facilitating subsequent element separation operations in the vacuum chamber 3 through interaction with magnetic fields. The electric field applies a force to charged particles in the plasma, giving them kinetic energy and accelerating their movement.

[0046] For example, the electric field generator 131 can not only generate a basic uniform electric field to accelerate the plasma, but also has the ability to generate a gradient electric field. By adjusting the gradient of the electric field, the acceleration process of the plasma can be controlled more precisely, so that ions of different masses or charges can obtain a more suitable acceleration effect, which is beneficial to more accurate element separation in the future.

[0047] The receiving device 2 is used to collect at least two different plasmas after the preceding series of processes. When plasmas formed by different elements are deflected by magnetic fields or other forces in the vacuum chamber 3, they will fall at different positions on the receiving panel 21, thereby achieving the collection of plasmas of different elements and providing a basis for further analysis or processing of different elements.

[0048] For example, the receiving panel 21 may be made of a special coating material to prevent chemical reactions while ensuring good collection effect.

[0049] Vacuum chamber 3 is a closed space maintained at a low pressure or even close to a vacuum. Vacuum chamber 3 provides a suitable environment for the plasma generated by ion source 1 and subsequent separation operations. On the one hand, vacuum chamber 3 can reduce the interference of gas molecules on plasma motion; on the other hand, the magnetic field generated by magnetic field generator 31 inside vacuum chamber 3 can better act on the plasma, causing the plasma to deflect in the magnetic field. Since different plasmas have different deflection radii and different trajectories, plasmas ejected from the same position can be separated, thereby achieving element separation.

[0050] For example, the vacuum chamber 3 is equipped with a vacuum level monitor to monitor the vacuum level inside the vacuum chamber 3 in real time, ensuring that it is always maintained at a suitable level so as to ensure that the movement of the plasma is not disturbed by too many gas molecules, and at the same time, it is conducive to the effective action of the magnetic field on the plasma.

[0051] In some embodiments, the wall surface of the vacuum chamber 3 is provided with an anti-sputtering coating to reduce the damage to the wall surface of the vacuum chamber 3 caused by ion sputtering that may occur during the interaction between plasma and magnetic fields, thereby extending the service life of the vacuum chamber 3.

[0052] Please see Figure 3 The element separation method includes the following steps S101 to S106:

[0053] Step S101: Fill the gasification unit with the raw material to be separated.

[0054] The operator determines the filling amount based on the design capacity of the gasification unit 11 and the requirements of the subsequent separation process, and ensures that the raw materials are evenly distributed in the effective gasification area to avoid local accumulation or gaps, which would affect the subsequent gasification effect and stability.

[0055] Step S102: Control the gasification mechanism to gasify the raw material to be separated to form saturated steam.

[0056] The vaporization mechanism 11 converts the loaded raw materials to be separated into a saturated vapor state, which is a key step in the entire element separation process. The vaporization process essentially endows the raw material particles with sufficient energy to overcome intermolecular forces, causing them to escape from a solid or liquid state into a gaseous state. This ensures that the chemical structure of the raw materials is not destroyed during the gasification process, and stably forms saturated vapor that meets the requirements of subsequent ionization operations, preparing for the next stage of plasma generation.

[0057] Step S103: Control the saturated vapor to enter the ionization chamber, control the ionization chamber to emit electrons, and ionize the saturated vapor to form plasma.

[0058] Saturated vapor, a product of the vaporization process, carries atoms or molecules of the elements to be separated. Guided by a precisely controlled airflow, it enters the ionization chamber 121 in an orderly manner. A specially configured electron emission device in the ionization chamber 121 adjusts parameters such as emission current and voltage to determine the number, rate, and energy of emitted electrons, preparing them to collide with the saturated vapor and induce ionization. The high-speed emitted electrons collide with the saturated vapor entering the ionization chamber 121, using their energy to break down the electron cloud structure of the atoms and molecules in the saturated vapor, causing outer electrons to detach or transfer. The originally electrically neutral atoms and molecules become charged ions. When a large number of ions coexist with the still-free electrons that did not participate in the ionization reaction in the same chamber, plasma is formed.

[0059] Step S104: Control the electric field generator to generate an electric field, accelerate the plasma in the electric field, and control the plasma to be injected into the vacuum chamber from the outlet.

[0060] Based on the principles of electromagnetism, an electric field is constructed using the potential difference between current-carrying conductors and between electrode plates. This field provides the charged particles (positive ions, negative ions, and electrons) in the plasma with the power to move in a directed manner, causing them to accelerate. Under the guidance of the electric field, the accelerated plasma is ejected towards the pre-designed outlet of the extraction mechanism 13. The ejection direction and angle of the plasma are precisely controlled to ensure that it can enter the vacuum chamber 3 at a high speed and with an accurate attitude.

[0061] Step S105: Control the magnetic field generator to generate a magnetic field, apply a deflection force to the plasma in the magnetic field, and control the plasma to be directed toward the receiving panel.

[0062] The magnetic field generator 31 operates based on the principle of electromagnetic induction, applying a deflection force to the plasma entering its range. According to the Lorentz force law, when a charged particle is in a magnetic field, it experiences a force perpendicular to both its direction of motion and the direction of the magnetic field—the Lorentz force. Because ions formed from different elements differ in mass and charge, under the same magnetic field strength and plasma velocity, the magnitude and direction of the Lorentz force vary, leading to different degrees of deflection of their trajectories. This differentiated deflection characteristic provides the physical basis for the subsequent separation of plasmas from different elements. After being deflected and filtered by the magnetic field, the plasma, following its unique trajectory, is precisely controlled and directed toward the receiving panel 21 under the coordinated guidance of the magnetic field and the system structure.

[0063] Step S106: Control the receiving panel to collect plasma, wherein the receiving panel is capable of collecting at least two different types of plasma.

[0064] The plasma collection task is accomplished by controlling the receiving panel 21, which has the ability to collect at least two different plasmas. By effectively collecting at least two different plasmas through the receiving panel 21, the entire process from the original raw material to be separated to the final separation of plasmas of different elements is completed.

[0065] The element separation method provided in this application embodiment involves an element separation system 10 that converts the raw material to be separated into saturated vapor via a vaporization mechanism 11, then ionizes it into plasma via a plasma generation mechanism 12, and finally accelerates the plasma via an extraction mechanism 13, thereby converting the raw material into an easily separable plasma state. Different types of plasma are separated by generating a magnetic field through a vacuum chamber 3 and its internal magnetic field generator 31. The outlet of the extraction mechanism 13 and the receiving panel 21 are spaced apart in the vacuum chamber 3. By configuring the receiving panel 21 of the receiving device 2 to collect the separated plasma of different types, different types of element separation can be achieved. Furthermore, multiple elements can be separated simultaneously by loading the raw material once, which improves the element separation efficiency and meets the needs of large-scale element separation.

[0066] In some embodiments, please refer to Figures 1 to 2 The gasification mechanism 11 includes a receiving device 111, which has a first receiving cavity 1111. The gasification mechanism 11 gasifies the raw material to be separated within the first receiving cavity 1111. The ionization chamber 121 has a second receiving cavity 1211, which ionizes saturated vapor to generate plasma within the second receiving cavity 1211. The electric field generator 131 has a receiving region 1311, which generates an electric field within the receiving region 1311. The first receiving cavity 1111, the second receiving cavity 1211, and the receiving region 1311 are arranged sequentially along a first direction.

[0067] The receiving device 111 has a first opening 1112 communicating with the first receiving cavity 1111 along the first direction near the ionization chamber 121. The ionization chamber 121 has a second opening 1212 and a third opening 1213 communicating with the second receiving cavity 1211 along the first direction. The second opening 1212 is close to the first opening 1112 and is opposite to the first opening 1112, and the first opening 1112 communicates with the second opening 1212. The electric field generator 131 has a fourth opening 1312 and a fifth opening 1313 communicating with the receiving area 1311 along the first direction. The fourth opening 1312 is close to the third opening 1213 and is opposite to the third opening 1213.

[0068] The receiving device 111 is used to provide a specific space, namely the first receiving cavity 1111.

[0069] The first receiving cavity 1111 is the internal space of the receiving device 111, which is the place where the raw material to be separated is vaporized. It provides a relatively stable environment for the vaporization process, so that the conditions required for vaporization (such as temperature, pressure, etc.) can be well controlled and maintained within this cavity to achieve effective vaporization of the raw material to be separated into saturated vapor. It is used to place the raw material to be separated so that the vaporization operation can be carried out in this relatively closed and suitable environment.

[0070] The second containment cavity 1211 is the specific location where saturated vapor is ionized to generate plasma. Within this cavity, by employing appropriate ionization methods (such as electron collisions, radio frequency discharges, etc.), atoms or molecules in the saturated vapor can be ionized under a specific energy environment to generate plasma, a state of matter containing a large number of ions, electrons, and neutral particles, and which is electrically neutral overall.

[0071] The containment region 1311 is the spatial region inside the electric field generator 131, where the electric field is generated. It provides a relatively closed and controllable spatial environment for the generation of the electric field and its effect on the plasma, enabling the electric field to accelerate the plasma as expected and ensuring that the plasma enters the vacuum chamber 3 at the appropriate speed and direction.

[0072] For ease of explanation, the first direction here is... Figure 1 or Figure 2 The direction mentioned above, of course, the first direction can also be other directions, and is not limited here.

[0073] The first receiving cavity 1111, the second receiving cavity 1211, and the receiving region 1311 are arranged sequentially along the first direction. Saturated vapor can enter the second receiving cavity 1211 along the first direction, generate plasma in the second receiving cavity 1211, and the plasma enters the receiving region 1311 along the first direction and is accelerated in the electric field.

[0074] The first opening 1112 is located on the side of the containing device 111 closer to the ionization chamber 121 along the first direction and communicates with the first containing cavity 1111. It serves to connect the first containing cavity 1111 of the containing device 111 and the ionization chamber 121, so that the saturated vapor formed by vaporization in the first containing cavity 1111 can smoothly enter the second containing cavity 1211 of the ionization chamber 121 through the first opening 1112 for subsequent ionization operations.

[0075] The second opening 1212 is one of two openings in the ionization chamber 121 that are arranged opposite to each other along the first direction. It is close to and opposite to the first opening 1112, and communicates with the second receiving cavity 1211 of the ionization chamber 121. It is the inlet for saturated vapor to enter the second receiving cavity 1211 from the first receiving cavity 1111, and together with the first opening 1112, it forms a channel for the transmission of saturated vapor between the vaporization mechanism 11 and the ionization chamber 121.

[0076] The third opening 1213 is also an opening in the ionization chamber 121 that is opposite to the second opening 1212 along the first direction and communicates with the second receiving cavity 1211. Its function is to provide a channel for some of the plasma generated during the ionization process to the channel receiving region 1311.

[0077] The fourth opening 1312 is located in one of the two openings of the electric field generator 131 that are arranged opposite each other along the first direction. It is close to and opposite to the third opening 1213, and is connected to the receiving area 1311 of the electric field generator 131. It is the entrance for plasma to enter the receiving area 1311 of the electric field generator 131 from the second receiving cavity 1211 of the ionization chamber 121, so that the plasma generated by ionization can smoothly enter the electric field generator 131 for acceleration.

[0078] The fifth opening 1313 is another opening of the electric field generator 131 that is positioned opposite to the fourth opening 1312 along the first direction and is connected to the receiving area 1311. The fifth opening 1313 faces the vacuum chamber 3 and guides the accelerated plasma into the magnetic field of the vacuum chamber 3.

[0079] The first receiving cavity 1111, the second receiving cavity 1211 and the receiving area 1311 are arranged sequentially along the first direction, and each receiving cavity has a corresponding opening along the first direction. In this way, the raw material to be separated can be gasified, ionized and accelerated sequentially along the first direction. The layout is reasonable, the transport path of intermediate products is reduced, the efficiency of plasma generation by ion source 1 is improved, and the structure of ion source 1 is simplified.

[0080] In some embodiments, please refer to Figures 1 to 2 The gasification mechanism 11 includes at least two receiving devices 111, each receiving device 111 having a first receiving cavity 1111 and a first opening 1112, and the number of second openings 1212 being the same as the number of first openings 1112.

[0081] For example, the same type of raw materials to be separated may be placed in one container 111. Alternatively, raw materials with similar properties may be placed in one container 111, such as raw materials with similar melting points or chemical properties. Of course, all the raw materials to be separated may also be melted to form an alloy and placed in the same container 111.

[0082] At least two containment devices 111 are arranged in parallel. Each containment device 111 has a dedicated first containment chamber 1111 to store the raw material to be separated and a corresponding first opening 1112 for outputting the vaporized saturated vapor. At the same time, the ionization chamber 121 is configured with the same number of second openings 1212 as the number of first openings 1112, which is designed to receive the saturated vapor produced by each containment device 111 on a one-to-one basis, seamlessly connecting to the subsequent ionization process, which is conducive to the synchronous and orderly processing of multiple raw materials to be separated.

[0083] In some embodiments, please refer to Figures 1 to 2 The gasification mechanism 11 includes a heating element 112, which is sleeved on the outer wall of the receiving device 111.

[0084] Heating element 112 is a device that can generate heat. Its energy source is usually electrical energy or thermal energy (such as steam heat, hot oil heat, etc.). Its function is to provide heat to the surrounding environment or objects in contact with it, so as to raise the temperature of the target object to meet the temperature requirements for vaporization.

[0085] The specific structure of the heating element 112 is not limited here.

[0086] A heating element 112 is used and is fitted onto the outer wall of the containing device 111. The purpose of this arrangement is to use the heat generated by the heating element 112 to be gradually transferred to the first containing cavity 1111 inside through heat conduction via the outer wall of the containing device 111. This creates a suitable high-temperature environment for the raw material to be separated placed in the cavity, prompting the raw material to absorb sufficient heat, overcome intermolecular forces, and achieve the transformation from the original solid or liquid state to a gaseous saturated vapor state, thus meeting the requirements of subsequent processing steps for the physical state of the raw material to be tested.

[0087] In some embodiments, please refer to Figures 1 to 2 There are multiple housing devices 111 and heating elements 112, and each housing device 111 corresponds to a heating element 112.

[0088] The one-to-one correspondence means that each containment device 111 has a dedicated matching heating element 112. The two are equal in number and work together in a precise matching manner to meet the personalized heat requirements of the raw materials to be separated in the individual containment device 111 for gasification, thus ensuring the stability and effectiveness of the operation of each unit.

[0089] It is equipped with multiple containment devices 111 and an equal number of heating elements 112, and a one-to-one dedicated matching system is established. In actual operation, each containment device 111 independently carries different raw materials to be separated (which may be raw materials with different properties and compositions). The corresponding heating elements 112 independently supply appropriate heat according to the characteristics of the raw materials in the associated containment device 111, the filling amount, and other factors, to ensure that the gasification operation in each containment device 111 can be carried out in a suitable temperature environment, providing high-quality and stable saturated vapor for subsequent plasma generation and element separation processes.

[0090] In some embodiments, please refer to Figures 1 to 2 The ion source 1 includes a support 14, which is supported on the side of the receiving device 111 away from the first opening 1112.

[0091] The main function of the support component 14 is to bear, fix and maintain other components in a stable spatial position, provide necessary mechanical support, resist the risk of displacement and deformation caused by its own weight, operating vibration, external interference forces and other factors, and ensure that the supported object can carry out its work normally and safely.

[0092] For example, the support member 14 has adjusting components such as lifting screws and hinges, which can change the support height and tilt angle as needed. In the initial stage of equipment installation, the level of the receiving device 111 can be precisely calibrated to ensure that the raw materials are heated and vaporized evenly; after long-term use, if the foundation ground settles, it is easy to readjust; the angle of the receiving device 111 can be flexibly adjusted according to the needs of different experiments or production processes (such as the flow direction of saturated steam discharge).

[0093] For example, a quick-locking structure such as magnetic attraction or slot-block is designed on the contact surface between the support member 14 and the receiving device 111. This allows for quick alignment and fixation during installation, and easy disassembly and unlocking when disassembling, repairing, or replacing the receiving device 111, reducing downtime. In conjunction with the positioning pin, it ensures that the positional accuracy of the receiving device 111 relative to the support member 14 remains constant after each installation, maintaining process stability.

[0094] The support member 14 provides solid support for the housing device 111 from the bottom, offsetting its own weight and the complex force system generated under operating conditions, maintaining a stable spatial posture, preventing uneven distribution of raw materials and imbalance of gasification reaction due to shaking and displacement, ensuring stable production of saturated steam, improving the reliability of the front-end gasification link of the element separation system 10, and inputting a high-quality material flow for subsequent ionization and separation processes.

[0095] In some embodiments, please refer to Figures 1 to 2 Support component 14 is made of thermally conductive material.

[0096] Thermally conductive materials have excellent thermal conductivity, enabling them to transfer heat quickly and efficiently within themselves.

[0097] The thermally conductive material is not limited here; it can be metals such as copper, aluminum, and silver, as well as some high-performance ceramics and non-metallic materials such as graphite. When a temperature difference exists, heat can diffuse rapidly along the material medium, thereby achieving the effect of heat transfer or uniform distribution.

[0098] The selected support component 14 is made of a material with excellent thermal conductivity. During the operation of the element separation system 10, the containing device 111 is in a high-temperature state due to the gasification operation of the raw materials inside (heating is achieved by heating elements 112 fitted on the outer wall). As a component that is in close contact with the containing device 111, the support component 14 is made of a thermally conductive material to promptly conduct and dissipate excess heat from the containing device 111, preventing excessive heat accumulation in the containing device 111. This stabilizes the temperature field inside the device, ensuring the stable and continuous progress of the raw material gasification process, and also optimizes and controls the overall thermal environment of the equipment.

[0099] In some embodiments, please refer to Figures 1 to 2 The lead-out mechanism 13 includes a first lead-out plate 132 and a second lead-out plate 133 spaced apart along a first direction, a fourth opening 1312 disposed on the first lead-out plate 132, a fifth opening 1313 disposed on the second lead-out plate 133, and a receiving area 1311 is defined between the first lead-out plate 132 and the second lead-out plate 133.

[0100] The first lead-out plate 132 and the second lead-out plate 133 work together to form a fourth opening 1312, which is the entrance channel for plasma to enter the internal containment area 1311 of the lead-out mechanism 13 from the ionization chamber 121. Together, they create an electric field environment to accelerate the plasma.

[0101] The second lead-out plate 133 is provided with a fifth opening 1313, which together with the first lead-out plate 132 encloses and defines the accommodating area 1311. This not only helps to create a stable electric field, but also provides an exit path for the plasma to leave the lead-out mechanism 13 after acceleration and enter the vacuum chamber 3, ensuring smooth plasma flow and connecting the preceding and following processes.

[0102] The first lead-out plate 132 and the second lead-out plate 133, when spaced apart, form an inner space containing region 1311. This space is where the electric field is generated and acts. After the plasma enters, it accelerates under the drive of the electric field. The rational design of this region is related to the plasma acceleration effect, energy acquisition, and the final element separation effect.

[0103] The first lead-out plate 132 and the second lead-out plate 133 are arranged sequentially along the first direction. The two plates are spaced apart to form a receiving area 1311. The plasma produced by the ionization chamber 121 flows into this area through the fourth opening 1312 of the first lead-out plate 132. After being accelerated by the electric field, it is output to the vacuum chamber 3 through the fifth opening 1313 of the second lead-out plate 133. The various structures work closely together and perform their respective functions to form a complete and smooth plasma extraction and acceleration process chain, which meets the plasma state control requirements of the element separation system 10.

[0104] In some embodiments, please refer to Figures 1 to 2 The distance between the first lead-out plate 132 and the second lead-out plate 133 is 10mm-50mm.

[0105] The specific distance between the first lead-out plate 132 and the second lead-out plate 133 is not limited here. For example, it can be 10mm, 15mm, 20mm, 25mm, 30mm, 35mm, 40mm, 45mm, 50mm, etc.

[0106] The distance between the first lead-out plate 132 and the second lead-out plate 133 is set within the above range to create the most suitable acceleration space environment for the plasma, shaping a specific electric field shape and intensity distribution. The plasma accelerates under the action of the electric field and enters the vacuum chamber 3 to prepare for subsequent separation.

[0107] In some embodiments, the distance between the fourth opening 1312 and the third opening 1213 is 0mm-50mm.

[0108] The specific distance between the fourth opening 1312 and the third opening 1213 is not limited here. For example, it can be 0mm, 5mm, 10mm, 15mm, 20mm, 25mm, 30mm, 35mm, 40mm, 45mm, 50mm, etc.

[0109] By setting the distance between the fourth opening 1312 and the third opening 1213 within the aforementioned range, energy loss and turbulence interference during the transfer of plasma from the ionization chamber 121 to the extraction mechanism 13 are reduced, ensuring that the plasma enters the acceleration stage in a good "initial state", thereby improving the material flow and energy utilization efficiency of the overall element separation system 10 and laying the foundation for precise separation.

[0110] In some embodiments, the area of ​​the fifth opening 1313 is smaller than the area of ​​the fourth opening 1312.

[0111] In some embodiments, the fifth opening 1313 is designed to have electric adjustment or intelligent material self-adaptation (such as shape memory alloys or electrostrictive polymers surrounding the opening edge and adjusting the size according to electrical signals), which can flexibly adjust the area size during system operation according to the real-time plasma flow and energy, and accurately match different working conditions.

[0112] Plasma flows out of ionization chamber 121. The fourth opening 1312 is relatively spacious, allowing more plasma to flow into the receiving area 1311 of the extraction mechanism 13. Driven by the electric field, it accelerates forward. As the acceleration process progresses, physical properties such as energy and flow rate change. When it reaches the second extraction plate 133, it flows out through the smaller fifth opening 1313. This constricted design is conducive to plasma accumulation, preparing for subsequent plasma output separation.

[0113] In one implementation, please refer to Figures 1 to 2 The receiving panel 21 includes at least two sub-panels, each of which can be used to collect different plasmas.

[0114] Sub-panels are the basic units that make up receiver panel 21. Multiple sub-panels are assembled together to form a complete receiver panel 21 structure. Each sub-panel has the ability to independently collect a specific plasma. Based on the different deflection paths and landing points of plasma in the magnetic field due to differences in element types, each sub-panel is carefully arranged to facilitate the accurate capture of the corresponding plasma and achieve the classified collection of multiple different plasmas.

[0115] In some embodiments, step S101 includes the following steps S201 to S2021:

[0116] Step S201: Fill the gasification unit with different types of raw materials to be separated.

[0117] Step S2021: Adjust the gasification temperature of the gasification mechanism to the maximum gasification temperature among the gasification temperatures of each raw material to be separated.

[0118] Adjusting the vaporization temperature of the vaporization mechanism 11 to the maximum vaporization temperature among the vaporization temperatures of each raw material to be separated is determined by fully considering the different vaporization characteristics of different substances. Because each raw material to be separated has its own unique physicochemical properties such as chemical bond strength, molecular structure, and crystal morphology, it corresponds to a different vaporization temperature threshold. Only when this temperature is reached or exceeded can the intermolecular forces be overcome to achieve the transition from solid / liquid to gas. Adjusting the vaporization temperature of the vaporization mechanism 11 to the maximum vaporization temperature among the vaporization temperatures of each raw material to be separated ensures that all raw materials to be separated can be vaporized, preparing for subsequent ionization and separation processes.

[0119] In some embodiments, step S101 includes the following steps S201 to S2022:

[0120] Step S201: Fill the gasification unit with different types of raw materials to be separated.

[0121] Step S2022: Adjust the arc voltage of the plasma generation mechanism to the maximum ionization arc voltage among the ionization arc voltages of each raw material to be separated.

[0122] In systems utilizing plasma for element separation, one of the key conditions for plasma generation by the plasma generation mechanism 12 is to ionize saturated vapors to form plasma by establishing a suitable arc voltage. Different raw materials to be separated have varying atomic structures, chemical bond energies, electron affinity, and other microscopic physicochemical properties, resulting in different energy requirements for ionizing their corresponding saturated vapors. This is reflected in the varying required ionization arc voltages during the ionization process. By adjusting the arc voltage of the plasma generation mechanism 12 to the maximum ionization arc voltage among the ionization arc voltages of each raw material to be separated, all raw materials can be ionized, preparing them for subsequent separation processes.

[0123] In some embodiments, step S101 includes the following steps S201 to S2023:

[0124] Step S201: Fill the gasification unit with different types of raw materials to be separated.

[0125] Step S2023: Adjust the current of the plasma generation mechanism to the maximum ionization current among the ionization currents of each raw material to be separated.

[0126] In the plasma generation process, electric current plays a crucial role. Ionization current refers to the current flowing through the plasma generation mechanism 12 during ionization. Different raw materials to be separated have different ionization energies (the minimum energy required to ionize atoms or molecules) due to their varying atomic or molecular structures. When the current flows through the plasma generation mechanism 12, it provides the energy needed to generate plasma, including ionizing atoms or molecules in the saturated vapor and maintaining the plasma's state. For example, a larger current means more electrons participate in energy transfer per unit time, thus providing sufficient energy to overcome the ionization energies of different raw material atoms or molecules. Each raw material to be separated has a corresponding ionization current, the magnitude of which is determined based on the minimum current value required to effectively ionize the saturated vapor of that raw material. Adjusting the current in the plasma generation mechanism 12 to the maximum ionization current among the raw materials to be separated ensures that all raw materials can be ionized, preparing them for subsequent separation processes.

[0127] In some embodiments, the gasification mechanism 11 includes at least two receiving devices 111, and step S201 includes the following steps:

[0128] Different types of raw materials to be separated are packed into at least two containers.

[0129] The containing device 111 is a container structure that directly carries the raw materials to be separated.

[0130] Depending on the application scenario and the characteristics of the raw materials to be processed, the containing device 111 can be made of various materials, such as high-temperature resistant ceramics, stainless steel, and graphite.

[0131] The container 111 can be cylindrical, rectangular, or other shapes to suit different equipment layouts and the need for convenient material loading. It must be able to safely and stably hold the raw materials, have good thermal conductivity to ensure that the heat from the gasification mechanism 11 is efficiently transferred to the raw materials to drive the gasification process, and also have a certain degree of chemical stability to prevent chemical reactions with the raw materials that could lead to contamination or equipment damage.

[0132] Based on the differences in raw material types, different raw materials to be separated are loaded into corresponding containment devices 111. This effectively avoids interference between different raw materials due to their differing properties within the same space, thereby ensuring gasification efficiency and steam purity. For example, when processing raw materials containing a mixture of elemental metals and metal compounds, the elemental metals can be placed in one containment device 111. Due to their good thermal conductivity and stability, and by setting a suitable high temperature and inert atmosphere, the elemental metals are efficiently gasified. Meanwhile, the metal compound raw materials can be loaded into another containment device 111. This allows for targeted gasification based on the characteristics of the metal compounds, reducing interference between different raw materials.

[0133] In some embodiments, please refer to Figures 1 to 2 The gasification mechanism 11 includes a receiving device 111, and step S201 includes the following steps:

[0134] At least two of the raw materials to be separated are fused into an alloy.

[0135] When at least two raw materials to be separated are alloyed, the different elements interact through chemical bonds, metallic bonds, and other means to form ordered or disordered crystal structures. As a result, the physical and chemical properties of the alloy differ significantly from those of the pure elemental raw materials that compose it. In this process, fusing at least two raw materials to be separated into an alloy can effectively lower the melting point of the raw materials.

[0136] The alloy is placed inside the receiving device.

[0137] The method of fusing at least two raw materials to be separated into an alloy to lower their melting point has several important implications. Firstly, it allows raw materials with inherently high melting points to be vaporized in a vaporization mechanism 11 with relatively low heating capacity. This significantly expands the applicability of the vaporization mechanism 11, enabling the vaporization of materials that cannot be processed in a conventional vaporization mechanism 11 due to their excessively high melting points. Secondly, from a manufacturing cost perspective, it eliminates the need to pursue excessively high heating capacity to accommodate high-melting-point raw materials, thus reducing the manufacturing cost of the vaporization mechanism 11. It also eliminates the need for complex and expensive components such as ultra-high temperature heating elements and high-power heating systems, simplifying the manufacturing process and reducing costs.

[0138] In some embodiments, please refer to Figures 1 to 2 The ratio of the relative elemental masses of each raw material to be separated is greater than or equal to 0.9 and less than or equal to 1.1.

[0139] The specific ratio of the relative elemental mass of each raw material to be separated varies within this specific range, for example, it can be 0.91, 0.92, 0.93, 0.94, 0.95, 0.96, 0.97, 0.98, 0.99, 1.00, 1.01, 1.02, 1.03, 1.04, 1.05, 1.06, 1.07, 1.08, 1.09, 1.1, etc.

[0140] It should be noted that the ratio of the relative elemental masses of the raw materials to be separated mentioned here refers to the ratio of the relative elemental masses of any two raw materials to be separated. It can be the ratio of the raw material with the larger relative elemental mass to the raw material with the smaller relative elemental mass, or the ratio of the raw material with the smaller relative elemental mass to the raw material with the larger relative elemental mass.

[0141] This ratio limit is set to standardize and quantify the mass relationships of the constituent elements in the raw materials. When the relative mass ratios of the raw materials to be separated are within the above range, the relative mass ratios of the different key elements within them are relatively close and balanced, with minimal differences. With similar relative mass ratios, the differences in the physicochemical properties of each element in subsequent separation processes such as gasification, ionization, and plasma manipulation are relatively small. This allows for the use of more uniform process parameters, reducing the need for frequent adjustments to equipment parameters due to large differences in elemental properties. Consequently, the separation operation is more stable and efficient, reducing operational complexity and uncertainty.

[0142] In some embodiments, please refer to Figures 1 to 2 The difference in ionization arc voltage between each raw material to be separated is greater than or equal to -1000V and less than or equal to 1000V.

[0143] The specific difference in ionization arc voltage of each raw material to be separated is not limited here. For example, it can be -1000V, -900V, -800V, -700V, -600V, -500V, -400V, -300V, -200V, -100V, 0V, 100V, 200V, 300V, 400V, 500V, 600V, 700V, 800V, 900V, 1000V, etc.

[0144] It should be noted that the difference in ionization arc voltage between the raw materials to be separated mentioned here refers to the difference in ionization arc voltage between any two raw materials to be separated. It can be the difference obtained by comparing the raw material with the larger ionization arc voltage with the raw material with the smaller ionization arc voltage, or the difference obtained by comparing the raw material with the smaller ionization arc voltage with the raw material with the larger ionization arc voltage.

[0145] By limiting the quantitative differences in the ionization arc voltages of different raw materials to be separated to the aforementioned range, it means that the absolute value of the difference between the ionization arc voltages of any two raw materials to be separated is at most 1000V. On the one hand, this allows for the use of more universal equipment and process parameters in the ionization process of different raw materials, reducing equipment complexity and cost. For example, it eliminates the need to design customized ionization devices for each raw material with a specific ionization arc voltage; instead, a single optimized universal ionization device can be used to process multiple raw materials, improving equipment utilization and economy. On the other hand, similar ionization characteristics help improve the stability and repeatability of the separation process. In the subsequent plasma generation and element separation stages, because the ionization states of the raw materials are relatively similar, the energy distribution and trajectory of ions are easier to predict and control, reducing separation deviations and impurity contamination caused by ionization differences. This significantly improves the separation purity and yield of the target element, shortens the batch processing cycle, and better meets the needs of large-scale industrial high-efficiency production.

[0146] In some embodiments, please refer to Figures 1 to 2 The difference in ionization current of each raw material to be separated is greater than or equal to -500A and less than or equal to 500A.

[0147] The specific difference in ionization current of each raw material to be separated is not limited here. For example, it can be -500A, -400A, -300A, -200A, -100A, 0A, 100A, 200A, 300A, 400A, 500A, etc.

[0148] It should be noted that the difference in ionization current of the raw materials to be separated mentioned here refers to the difference in ionization current between any two raw materials. It can be the difference obtained by comparing the raw material with the larger ionization current with the raw material with the smaller ionization current, or the difference obtained by comparing the raw material with the smaller ionization current with the raw material with the larger ionization current.

[0149] By limiting the quantitative differences in the ionization currents of different raw materials to be separated to the aforementioned range, it means that the absolute value of the difference between the ionization currents of any two raw materials is at most 500A. This effectively controls the difference in the required ionization current for each raw material within a specific range, thus ensuring a certain similarity and consistency in the overall ionization characteristics of the raw material system. This design facilitates the subsequent use of standardized processes. When the ionization characteristics of the raw materials are similar, the same or similar equipment parameters and process flows can be used during plasma generation, eliminating the need to customize complex ionization devices and processes for each raw material, reducing equipment costs and operational complexity. Simultaneously, similar ionization characteristics also help improve the stability and repeatability of the separation process, reduce separation deviations and impurity contamination caused by ionization differences, improve the separation purity and yield of the target element, and better meet the needs of large-scale industrial production.

[0150] In some embodiments, please refer to Figures 1 to 2 The receiving device 2 includes a current detector, which is disposed on the receiving panel 21.

[0151] A current detector is an instrument that measures the magnitude and changes in current within a circuit. The current detector is mounted on the receiving panel 21 and is specifically used to detect relevant parameters of the current on the receiving panel 21. Its working principle is typically based on physical phenomena such as electromagnetic induction. It determines the magnitude, direction, and presence of any deviation in the current by using the magnetic field generated by the induced current or other related physical effects, providing data for subsequent control operations.

[0152] Controlling the receiving panel 21 to collect plasma includes the following steps S301 to S303:

[0153] Step S3.

[0154] A current detector is used to detect the current offset on the receiving panel 21, thereby acquiring real-time data on the changes in current on the receiving panel 21 during its interaction with the plasma. These current changes may reflect the influence of various factors such as plasma distribution and energy state. Accurate detection of the current offset provides crucial data support for subsequent assessments of whether the collection process is functioning correctly and whether adjustments are necessary.

[0155] In step S302, if the current offset is not within the deviation error range, the current offset is reduced by adjusting the arc voltage and current of the plasma generation mechanism.

[0156] If the current offset is found to be outside the preset error range, it means that the plasma collection state of the receiving panel 21 may have been significantly affected, causing the current to deviate beyond the normal fluctuation range. In this case, it is necessary to adjust the arc voltage and current of the plasma generation mechanism 12 to attempt to reduce the current offset. The characteristics of the plasma generated by the plasma generation mechanism 12 (such as density and energy) are closely related to the arc voltage and current. By appropriately adjusting these parameters, the state of the plasma can be changed, thereby affecting the current on the receiving panel 21 and bringing it back as close to the normal error range as possible to ensure the smooth operation of the collection process.

[0157] In step S303, if the current offset is within the error range, plasma is collected through the receiving panel.

[0158] After testing and assessment, if the current offset is within the error range, it indicates that the current plasma collection status of the receiving panel 21 basically meets the requirements. At this point, plasma can be collected normally through the receiving panel 21. This step ensures that plasma collection is only performed when the collection conditions are relatively stable and meet expectations, which helps improve the quality of the collected plasma and the accuracy of subsequent processing.

[0159] In some embodiments, please refer to Figures 1 to 2 The deviation error is defined as the difference between the maximum and minimum current values ​​under a given flow rate and intensity condition not exceeding 2A.

[0160] Deviation error is a quantitative indicator for measuring the stability of the current on the receiving panel 21. Specifically, it is the range of difference between the maximum and minimum current values ​​allowed under specific flow rate and intensity settings. It is used to define the normal fluctuation limit of the current. If it exceeds this range, it is considered that the current has an abnormal deviation, and the plasma generation-related parameters need to be adjusted to correct it.

[0161] Flow velocity intensity refers to the comprehensive intensity characterization of plasma flow velocity and corresponding energy, density, etc. when plasma flows through the surrounding area of ​​receiving panel 21 or a specific location in the entire system. Different flow velocity intensities will affect the degree of interaction between plasma and receiving panel 21.

[0162] The maximum and minimum current values ​​refer to the current flowing through the receiving panel 21. During the continuous plasma collection process, the current fluctuates dynamically due to various internal and external factors. The highest current value that occurs during this period is the maximum current value, and correspondingly, the lowest current value reached during the fluctuation is the minimum current value. The difference between the two must conform to the deviation error setting specification to ensure a stable collection process.

[0163] The difference between the maximum and minimum current values ​​should not exceed 2A. For example, it can be 0A, 1.1A, 1.2A, 1.3A, 1.4A, 1.5A, 1.6A, 1.7A, 1.8A, 1.9A, 2A, etc.

[0164] By limiting the deviation error to within 2A, the current of the receiving panel 21 is kept stable, avoiding uneven plasma collection and partial ion escape caused by large current fluctuations. This ensures a continuous and efficient collection process, improving the total amount and purity collected. Simultaneously, the relationship between flow rate and current is standardized to reduce the system's sensitivity to complex operating conditions, and all components work together according to settings to reduce malfunctions.

[0165] This application provides an embodiment; please refer to [the example provided]. Figures 1 to 2 The receiving panel collects plasma including:

[0166] Adjust the distance between the receiving panel and the outlet so that the current detector can detect the current generated by the plasma.

[0167] The current detector can detect the current generated by the plasma, indicating that the receiving panel 21 is in the correct position to receive plasma.

[0168] When collecting plasma using the receiving panel 21, the core operation lies in precisely adjusting the distance between the receiving panel 21 and the outlet. In actual operation, due to factors such as the different types of elements to be separated, varying electric field strengths, and different magnetic field strengths, the position of the plasma arriving at the receiving device 2 will change. By reasonably adjusting the distance between the receiving panel 21 and the outlet, it can be ensured that the plasma accurately reaches the receiving panel 21 and is collected under different operating conditions. By precisely adjusting this distance, it is possible to better adapt to the outflow state of the plasma, ensuring that high-concentration, high-energy plasma is efficiently captured by the receiving panel 21, thereby reducing escape losses.

[0169] Specifically, different elements to be separated have different physicochemical properties, and their effects on electric and magnetic fields vary in the plasma state. For example, ions of certain elements may have higher migration velocities and specific trajectories under specific combinations of electric and magnetic fields, which will affect the final position of the plasma reaching the receiving device 2. Changes in the magnitude of the electric and magnetic fields will also alter the motion state of ions in the plasma, causing fluctuations in their position at the receiving device 2. By flexibly adjusting the distance between the receiving panel 21 and the outlet, optimization can be performed for different operating conditions, ensuring that the receiving panel 21 is always in the optimal collection position, maximizing plasma collection efficiency. Simultaneously, reducing escape losses not only helps increase the collection volume of the target element but also reduces the potential impact on the surrounding environment, improving the environmental friendliness and sustainability of the entire separation process.

[0170] The above description is merely a preferred embodiment of this application and is not intended to limit the application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application are included within the scope of protection of this application.

Claims

1. An element separation method, applied to an element separation system, characterized in that, The element separation system includes an ion source, a vacuum chamber, and a receiving device; the ion source includes a vaporization mechanism, a plasma generation mechanism, and an extraction mechanism; the plasma generation mechanism includes an ionization chamber; the extraction mechanism includes an electric field generator; and the vacuum chamber includes a magnetic field generator; the receiving device includes a receiving panel; the outlet of the extraction mechanism and the receiving panel are spaced apart in the vacuum chamber. The receiving device further includes a current detector, which is disposed on the receiving panel; The element separation method includes: Different types of raw materials to be separated are packed into the gasification mechanism; The gasification mechanism is controlled to gasify the raw materials to be separated to form saturated vapor, and the gasification temperature of the gasification mechanism is adjusted to the maximum gasification temperature among the gasification temperatures of each raw material to be separated. The saturated vapor is controlled to enter the ionization chamber, the ionization chamber is controlled to emit electrons, and the saturated vapor is ionized to form plasma; the arc voltage of the plasma generation mechanism is adjusted to the maximum ionization arc voltage among the ionization arc voltages of each of the raw materials to be separated, and the current of the plasma generation mechanism is adjusted to the maximum ionization current among the ionization currents of each of the raw materials to be separated. The electric field generator is controlled to generate an electric field, which accelerates the plasma within the electric field, and the plasma is controlled to be injected into the vacuum chamber from the outlet. The magnetic field generator is controlled to generate a magnetic field, which applies a deflection force to the plasma within the magnetic field and controls the plasma to be directed toward the receiving panel. The receiving panel is controlled to collect the plasma, wherein the receiving panel is capable of collecting at least two different types of plasma; The method of controlling the receiving panel to collect the plasma includes: The current detector is controlled to detect the current offset on the receiving panel; If the current offset is not within the deviation error range, the current offset can be reduced by adjusting the arc voltage and current of the plasma generation mechanism. If the current offset is within the deviation error range, the plasma is collected through the receiving panel.

2. The element separation method according to claim 1, characterized in that, The gasification mechanism includes at least two containment devices, and the different types of raw materials to be separated are filled in the gasification mechanism, including: Different types of raw materials to be separated are filled into the at least two containers.

3. The element separation method according to claim 1, characterized in that, The gasification mechanism includes a containment device, and the different types of raw materials to be separated are filled into the gasification mechanism, including: At least two of the raw materials to be separated are fused into an alloy; The alloy is placed inside the receiving device.

4. The element separation method according to claim 1, characterized in that, The ratio of the relative elemental masses of each of the raw materials to be separated is greater than or equal to 0.9 and less than or equal to 1.

1.

5. The element separation method according to claim 1, characterized in that, The difference in ionization arc voltage of each of the raw materials to be separated is greater than or equal to -1000V and less than or equal to 1000V.

6. The element separation method according to claim 1, characterized in that, The difference in ionization current of each of the raw materials to be separated is greater than or equal to -500A and less than or equal to 500A.

7. The element separation method according to claim 1, characterized in that, The deviation error is defined as the difference between the maximum and minimum values ​​of the current under a given flow rate and intensity condition not exceeding 2A.

8. The element separation method according to claim 1, characterized in that, The receiving panel collects the plasma including: Adjust the distance between the receiving panel and the outlet so that the current detector can detect the current generated by the plasma.

Images