A method for effectively increasing the bandwidth of a klystron and a high-frequency structure for a multi-beam klystron.

By adjusting the resonant frequency and position of the high-frequency structure of the klystron, especially by making the resonant frequency of the first intermediate resonant cavity twice the signal operating frequency minus the traditional design frequency, the problem of narrow bandwidth of the klystron was solved, achieving a balance between high power, high efficiency and wide bandwidth, and reducing processing costs.

CN119811960BActive Publication Date: 2025-10-28UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Application Number
CN202510042423.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-01-10
Publication Date
2025-10-28
Estimated Expiration
2045-01-10

AI Technical Summary

Technical Problem

Existing klystrons have complex high-frequency structures, making it difficult to effectively increase bandwidth while achieving high power and high efficiency. This results in narrow bandwidth, increased costs, and reduced success rate in manufacturing.

Method used

By adjusting the resonant frequency and position of the klystron's high-frequency structure, especially by making the resonant frequency of the first intermediate resonant cavity equal to twice the signal operating frequency minus the frequency of the traditional design, and by optimizing the position and external quality factor of the intermediate resonant cavity, the electron beam is ensured to exhibit both defocused and focused states, thus expanding the bandwidth.

Benefits of technology

Without increasing the tube length, the bandwidth of the klystron is increased to 2.1 times that of the original, maintaining high power and high efficiency, reducing processing costs and improving the tube manufacturing success rate.

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Abstract

This invention discloses a method for effectively improving the bandwidth of a klystron and a high-frequency structure for a multi-beam klystron. The method includes: designing a conventional high-power, high-efficiency klystron high-frequency structure, wherein the resonant frequencies of the input and output cavities of the conventional high-power, high-efficiency klystron high-frequency structure are equal to the signal operating frequency; all intermediate resonant cavities have resonant frequencies higher than the signal operating frequency to focus the input electron beam; adjusting the resonant frequency of the first intermediate resonant cavity to a relative operating frequency to defocus the electron beam; the relative operating frequency being lower than the signal operating frequency; and retaining the resonant frequencies of the other intermediate resonant cavities higher than the signal operating frequency to focus the electron beam; and adjusting and optimizing the position of the first intermediate resonant cavity to achieve the same efficiency as the conventional high-power, high-efficiency klystron high-frequency structure, thereby improving the klystron bandwidth. This invention expands the bandwidth of the klystron while ensuring high power and high efficiency without increasing its length.
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Citation Information

Patent Citations

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